Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

Superconductivity Induced by Strong Electron-Exciton Coupling in Doped Atomically Thin Semiconductor Heterostructures

We study a mechanism to induce superconductivity in atomically thin semiconductors where excitons mediate an effective attraction between electrons. Our model includes interaction effects beyond the paradigm of phonon-mediated superconductivity and connects to the well-established limits of Bose and Fermi polarons. By accounting for the strong-coupling physics of trions, we find that the effective electron-exciton interaction develops a strong frequency and momentum dependence accompanied by the system undergoing an emerging BCS-BEC crossover from weakly bound s-wave Cooper pairs to a superfluid of bipolarons. Even at strong-coupling the bipolarons remain relatively light, resulting in critical temperatures of up to 10% of the Fermi temperature. This renders heterostructures of two-dimensional materials a promising candidate to realize superconductivity at high critical temperatures set by electron doping and trion binding energies.

Coulomb engineering of two-dimensional Mott materials

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

Theory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach

Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS2, representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron-electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe-Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors.

Spatiotemporally Coupled Electron-Hole Dynamics in Two Dimensional Heterostructures

Coulomb interactions play a crucial role in low-dimensional semiconductor materials, e.g., 2D layered semiconductors, dictating their electronic and optical properties. However, fundamental questions remain as to whether and how Coulomb interactions affect the charge or energy flow in 2D heterostructures, which is essential for their light-electricity conversions. Herein, using ultrafast spectroscopy, we report real space coupled electron-hole dynamics in 2D heterostructures. We show in (WSe₂/)WS₂/MoTe₂ with a controlled energy gradient for the hole and a near flat band for electron transfer, the fate of the electron is controlled by the hole in coupled dynamics. The interfacial electron transfer from WS₂ to MoTe₂ follows the hole closely and can be facilitated or suppressed by dynamic Coulomb interaction. In parallel to the band alignment, this study reveals the critical role of Coulomb interactions on the fate of photogenerated charges in 2D heterostructures, providing experimental evidence for coupled electron-hole dynamics and a new knob for steering nanoscale charge or energy transfer process.

Interface-dependent phononic and optical properties of GeO/MoSO heterostructures

The interface-dependent electronic, vibrational, piezoelectric, and optical properties of van der Waals heterobilayers, formed by buckled GeO (b-GeO) and Janus MoSO structures, are investigated by means of first-principles calculations. The electronic band dispersions show that O/Ge and S/O interface formations result in a type-II band alignment with direct and indirect band gaps, respectively. In contrast, O/O and S/Ge interfaces give rise to the formation of a type-I band alignment with an indirect band gap. By considering the Bethe-Salpeter equation (BSE) on top of G₀W₀ approximation, it is shown that different interfaces can be distinguished from each other by means of the optical absorption spectra as a consequence of the band alignments. Additionally, the low- and high-frequency regimes of the Raman spectra are also different for each interface type. The alignment of the individual dipoles, which is interface-dependent, either weakens or strengthens the net dipole of the heterobilayers and results in tunable piezoelectric coefficients. The results indicate that the possible heterobilayers of b-GeO/MoSO asymmetric structures possess various electronic, optical, and piezoelectric properties arising from the different interface formations and can be distinguished by means of various spectroscopic techniques.

Leveraging Molecular Properties to Tailor Mixed-Dimensional Heterostructures beyond Energy Level Alignment

The surface sensitivity and lack of dielectric screening in two-dimensional (2D) materials provide numerous intriguing opportunities to tailor their properties using adsorbed π-electron organic molecules. These organic-2D mixed-dimensional heterojunctions are often considered solely in terms of their energy level alignment, i.e., the relative energies of the frontier molecular orbitals versus the 2D material conduction and valence band edges. While this simple model is frequently adequate to describe doping and photoinduced charge transfer, the tools of molecular chemistry enable additional manipulation of properties in organic-2D heterojunctions that are not accessible in other solid-state systems. Fully exploiting these possibilities requires consideration of the details of the organic adlayer beyond its energy level alignment, including hybridization and electrostatics, molecular orientation and thin-film morphology, nonfrontier orbitals and defects, excitonic states, spin, and chirality. This Perspective explores how these relatively overlooked molecular properties offer unique opportunities for tuning optical and electronic characteristics, thereby guiding the rational design of organic-2D mixed-dimensional heterojunctions with emergent properties.

Transient Optical Modulation of Two-Dimensional Materials by Excitons at Ultimate Proximity

Controlling the optical response of two-dimensional (2D) layered materials is critical for their optoelectronic and photonic applications. Current transient optical modulation of 2D semiconductors is mainly based on the band filling effect, which requires internal exciton/charge occupation from photoexcitation or charge injection. However, 2D atomically thin layers exhibit a strong excitonic effect and environmental sensitivity, offering exciting opportunities to engineer their optical properties through an external dielectric or electronic environment. Here, using femtosecond transient absorption spectroscopy as a tool and transition-metal dichalcogenide (TMD) van der Waals heterostructures with type I band alignment, we show the transient absorption modulation of the TMD layer by excitons at ultimate proximity without direct photoexcitation or exciton/charge occupation. Further layer-dependent study indicates the presence of excitons reduces the exciton oscillator strength in adjacent layers through the electric field effect because of environmental sensitivity and proximity of 2D materials. This result demonstrates the transient optical modulation with decoupled light absorption and modulation components and suggests an alternative approach to control the optical response of 2D materials for optoelectronic and photonic applications.

Tunable Phases of Moiré Excitons in van der Waals Heterostructures

Stacking monolayers of transition metal dichalcogenides into a heterostructure with a finite twist-angle gives rise to artificial moiré superlattices with a tunable periodicity. As a consequence, excitons experience a periodic potential, which can be exploited to tailor optoelectronic properties of these materials. Whereas recent experimental studies have confirmed twist-angle-dependent optical spectra, the microscopic origin of moiré exciton resonances has not been fully clarified yet. Here, we combine first-principles calculations with the excitonic density matrix formalism to study transitions between different moiré exciton phases and their impact on optical properties of the twisted MoSe₂/WSe₂ heterostructure. At angles smaller than 2°, we find flat, moiré-trapped states for inter- and intralayer excitons. This moiré exciton phase changes into completely delocalized states at 3°. We predict a linear and quadratic twist-angle dependence of excitonic resonances for the moiré-trapped and delocalized exciton phases, respectively.

Intrinsic lifetime of higher excitonic states in tungsten diselenide monolayers

The reduced dielectric screening in atomically thin transition metal dichalcogenides allows to study the hydrogen-like series of higher exciton states in optical spectra even at room temperature. The width of excitonic peaks provides information about the radiative decay and phonon-assisted scattering channels limiting the lifetime of these quasi-particles. While linewidth studies so far have been limited to the exciton ground state, encapsulation with hBN has recently enabled quantitative measurements of the broadening of excited exciton resonances. Here, we present a joint experiment-theory study combining microscopic calculations with spectroscopic measurements on the intrinsic linewidth and lifetime of higher exciton states in hBN-encapsulated WSe₂ monolayers. Surprisingly, despite the increased number of scattering channels, we find both in theory and experiment that the linewidth of higher excitonic states is similar or even smaller compared to the ground state. Our microscopic calculations ascribe this behavior to a reduced exciton-phonon scattering efficiency for higher excitons due to spatially extended orbital functions.

Ultrafast transition between exciton phases in van der Waals heterostructures

Heterostructures of atomically thin van der Waals bonded monolayers have opened a unique platform to engineer Coulomb correlations, shaping excitonic^1-3, Mott insulating⁴ or superconducting phases^5,6. In transition metal dichalcogenide heterostructures⁷, electrons and holes residing in different monolayers can bind into spatially indirect excitons^1,3,8-11 with a strong potential for optoelectronics^11,12, valleytronics^1,3,13, Bose condensation¹⁴, superfluidity^14,15 and moiré-induced nanodot lattices¹⁶. Yet these ideas require a microscopic understanding of the formation, dissociation and thermalization dynamics of correlations including ultrafast phase transitions. Here we introduce a direct ultrafast access to Coulomb correlations between monolayers, where phase-locked mid-infrared pulses allow us to measure the binding energy of interlayer excitons in WSe₂/WS₂ hetero-bilayers by revealing a novel 1s-2p resonance, explained by a fully quantum mechanical model. Furthermore, we trace, with subcycle time resolution, the transformation of an exciton gas photogenerated in the WSe₂ layer directly into interlayer excitons. Depending on the stacking angle, intra- and interlayer species coexist on picosecond scales and the 1s-2p resonance becomes renormalized. Our work provides a direct measurement of the binding energy of interlayer excitons and opens the possibility to trace and control correlations in novel artificial materials.

Dielectric Environment-Robust Ultrafast Charge Transfer Between Two Atomic Layers

Understanding electron transfer across two-dimensional (2D) van der Waals (vdW) interfaces especially the effect of dielectric environment not only contributes to the rational design of high performance optoelectronic and photo/electrocatalytic devices but also unravels the nature of charge motion. Herein, we investigated the electron transfer process between two atomic thin layered materials coupled by vdW force at ultimate proximity. Despite their susceptible electronic properties, we show electron transfer at 2D vdW interface is robust and ultrafast (∼30 fs), regardless of the surrounding dielectrics and solvents. Considering the static energy landscape and dynamic nuclear rearrangements, our result suggests the electronic coupling at 2D vdW heterointerfaces is sufficiently strong such that electron transfers adiabatically in a barrierless and ultrafast manner where energetics and solvent relaxation are not that relevant. The robust ultrafast electron transfer against the variation of dielectric environment is highly encouraging for 2D optoelectronic and photo/electrocatalytic devices.

Enhancement of Exciton-Phonon Scattering from Monolayer to Bilayer WS2

Layered transition metal dichalcogenides exhibit the emergence of a direct bandgap at the monolayer limit along with pronounced excitonic effects. In these materials, interaction with phonons is the dominant mechanism that limits the exciton coherence lifetime. Exciton-phonon interaction also facilitates energy and momentum relaxation, and influences exciton diffusion under most experimental conditions. However, the fundamental changes in the exciton-phonon interaction are not well understood as the material undergoes the transition from a direct to an indirect bandgap semiconductor. Here, we address this question through optical spectroscopy and microscopic theory. In the experiment, we study room-temperature statistics of the exciton line width for a large number of mono- and bilayer WS₂ samples. We observe a systematic increase in the room-temperature line width of the bilayer compared to the monolayer of 50 meV, corresponding to an additional scattering rate of ∼0.1 fs^-1. We further address both phonon emission and absorption processes by examining the temperature dependence of the width of the exciton resonances. Using a theoretical approach based on many-body formalism, we are able to explain the experimental results and establish a microscopic framework for exciton-phonon interactions that can be applied to naturally occurring and artificially prepared multilayer structures.

Exciton Relaxation Cascade in two-dimensional Transition Metal Dichalcogenides

Monolayers of transition metal dichalcogenides (TMDs) are characterized by an extraordinarily strong Coulomb interaction giving rise to tightly bound excitons with binding energies of hundreds of meV. Excitons dominate the optical response as well as the ultrafast dynamics in TMDs. As a result, a microscopic understanding of exciton dynamics is the key for a technological application of these materials. In spite of this immense importance, elementary processes guiding the formation and relaxation of excitons after optical excitation of an electron-hole plasma has remained unexplored to a large extent. Here, we provide a fully quantum mechanical description of momentum- and energy-resolved exciton dynamics in monolayer molybdenum diselenide (MoSe2) including optical excitation, formation of excitons, radiative recombination as well as phonon-induced cascade-like relaxation down to the excitonic ground state. Based on the gained insights, we reveal experimentally measurable features in pump-probe spectra providing evidence for the exciton relaxation cascade.