Probing Excitons, Trions, and Dark Excitons in Monolayer WS2 Using Resonance Raman Spectroscopy

Phase-Engineered Transition Metal Dichalcogenides for Highly Efficient Surface-Enhanced Raman Scattering

Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) is an attractive avenue to construct new surface-enhanced Raman scattering (SERS) substrates. Herein, 2D WS2 and MoS2 monolayers with high-purity distorted octahedral phase (1T') are prepared for highly sensitive SERS detection of analytes (e.g., rhodamine 6G, rhodamine B and crystal violet). 1T'-WS2 and 1T'-MoS2 monolayers show the detection limits of 8.28 × 10-12 and 8.57 × 10-11 M for rhodamine 6G, with the enhancement factors of 4.6 × 108 and 3.9 × 107, respectively, which are comparable to noble-metal substrates, outperforming semiconducting 2H-W(Mo)S2 monolayers and most of the reported non-noble-metal substrates. First-principles density functional theory calculations show that their Raman enhancement effect is mainly ascribed to highly efficient interfacial charge transfer between the 1T'-W(Mo)S2 monolayers and analytes. Our study reveals that 2D TMDs with semimetallic 1T' phase are promising as next-generation SERS substrates.

Resonant Raman Scattering Study of Strain and Defects in Chemical Vapor Deposition Grown MoS2 Monolayers

The development of bottom-up synthesis routes for semiconducting transition metal dichalcogenides (TMDs) and the assessment of their defects are of paramount importance to achieve their applications. TMD monolayers grown by chemical vapor deposition (CVD) can be subjected to significant strain and, here, Raman and photoluminescence spectroscopies are combined to characterize strain in over one hundred MoS2 monolayer samples grown by CVD. The frequency changes of phonons as a function of strain are analyzed, and used to extract the Grüneisen parameter of both zone-center and edge phonons. Additionally, the intensity of the defect-induced longitudinal acoustic (LA) and transverse acoustic (TA) Raman bands are discussed in relation to strain and electronic doping. The experimental mode-Grüneisen parameters obtained are compared with those calculated by density functional theory (DFT), to better characterize the type of strain and its resulting effects on Grüneisen parameters. The findings indicate that the use of Raman spectra to determine defect densities in 2D MoS2 must be always conducted considering strain effects. To the best of the authors' knowledge, this work constitutes the first report on double resonance Raman processes studied as a function of strain in 2D-MoS2. The new approach to obtain the Grüneisen parameter from zone-edge phonons in MoS2 can also be extended to other 2D semiconducting TMDs.

Observation of Multi-Phonon Emission in Monolayer WS2 on Various Substrates

Transition metal dichalcogenides (TMDs) have unique absorption and emission properties that stem from their large excitonic binding energies, reduced-dielectric screening, and strong spin-orbit coupling. However, the role of substrates, phonons, and material defects in the excitonic scattering processes remains elusive. In tungsten-based TMDs, it is known that the excitons formed from electrons in the lower-energy conduction bands are dark in nature, whereas low-energy emissions in the photoluminescence spectrum have been linked to the brightening of these transitions, either via defect scattering or via phonon scattering with first-order phonon replicas. Through temperature and incident-power-dependent studies of WS2 grown by CVD or exfoliated from high-purity bulk crystal on different substrates, we demonstrate that the strong exciton-phonon coupling yields brightening of dark transitions up to sixth-order phonon replicas. We discuss the critical role of defects in the brightening pathways of dark excitons and their phonon replicas, and we elucidate that these emissions are intrinsic to the material and independent of substrate, encapsulation, growth method, and transfer approach.

Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS₂ , such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier-exciton and carrier-phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

Morphology-induced spectral modification of self-assembled WS2 pyramids

Due to their intriguing optical properties, including stable and chiral excitons, two-dimensional transition metal dichalcogenides (2D-TMDs) hold the promise of applications in nanophotonics. Chemical vapor deposition (CVD) techniques offer a platform to fabricate and design nanostructures with diverse geometries. However, the more exotic the grown nanogeometry, the less is known about its optical response. WS₂ nanostructures with geometries ranging from monolayers to hollow pyramids have been created. The hollow pyramids exhibit a strongly reduced photoluminescence with respect to horizontally layered tungsten disulphide, facilitating the study of their clear Raman signal in more detail. Excited resonantly, the hollow pyramids exhibit a great number of higher-order phononic resonances. In contrast to monolayers, the spectral features of the optical response of the pyramids are position dependent. Differences in peak intensity, peak ratio and spectral peak positions reveal local variations in the atomic arrangement of the hollow pyramid crater and sides. The position-dependent optical response of hollow WS₂ pyramids is characterized and attributed to growth-induced nanogeometry. Thereby the first steps are taken towards producing tunable nanophotonic devices with applications ranging from opto-electronics to non-linear optics.

Resonance-Enhanced Excitation of Interlayer Vibrations in Atomically Thin Black Phosphorus

The strength of interlayer coupling critically affects the physical properties of 2D materials such as black phosphorus (BP), where the electronic structure depends sensitively on layer thickness. Rigid-layer vibrations reflect directly the interlayer coupling strength in 2D van der Waals solids, but measurement of these characteristic frequencies is made difficult by sample instability and small Raman scattering cross sections in atomically thin elemental crystals. Here, we overcome these challenges in BP by performing resonance-enhanced low-frequency Raman scattering under an argon-protective environment. Interlayer breathing modes for atomically thin BP were previously unobservable under conventional (nonresonant) excitation but became strongly enhanced when the excitation energy matched the sub-band electronic transitions of few-layer BP, down to bilayer thicknesses. The measured out-of-plane interlayer force constant was found to be 10.1 × 10¹⁹ N/m³ in BP, which is comparable to graphene. Accurate characterization of the interlayer coupling strength lays the foundation for future exploration of BP twisted structures and heterostructures.

Identifying Defect-Induced Trion in Monolayer WS2 via Carrier Screening Engineering

Unusually high exciton binding energies (BEs), as much as ∼1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS₂) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO₂ hole traps under high photocarrier densities and become more prominent in rhenium-doped WS₂. The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (∼214 meV), comparably higher than the trion (209 meV) and neutral exciton (174 meV), and further tuned by external photoinduced carrier density control. This investigation allows us to demonstrate defect-induced trion BE localization via spatial BE mapping in the monolayer WS₂ midflake regions distinctive from the flake edges.

A WS2-gold nanoparticle heterostructure-based novel SERS platform for the rapid identification of antibiotic-resistant pathogens

The emergence of antibiotic-resistant bacteria is the biggest threat to our society. The rapid discovery of drug resistant bacteria is very urgently needed to guide antibiotic treatment development. The current manuscript reports the design of a 2D-0D heterostructure-based surface enhanced Raman spectroscopy (SERS) platform, which has the capability for the rapid identification of the multidrug resistant strain of Salmonella DT104. Details of the synthesis and characterization of the heterostructure SERS platform using a two dimensional (2D) WS₂ transition metal dichalcogenide (TMD) and zero dimensional (0D) plasmonic gold nanoparticles (GNPs) have been reported. The current manuscript reveals that the 2D-0D heterostructure-based SERS platform exhibits extremely high Raman enhancement capabilities. Using Rh-6G and 4-ATP probe molecules, we determined that the SERS sensitivity is in the range of ∼10^-10 to 10^-11 M, several orders of magnitude higher than 2D-TMD on its own (10^-3 M) or 0D-GNPs on their own (∼10^-6 to 10^-7 M). Experimental and theoretical finite-difference time-domain (FDTD) simulation data indicate that the synergistic effect of an electromagnetic mechanism (EM) and a chemical mechanism (CM) on the heterostructure is responsible for the excellent SERS enhancement observed. Notably, the experimental data reported here show that the heterostructure-based SERS has the ability to separate a multidrug resistance strain from a normal strain of Salmonella by monitoring the antibiotic-pathogen interaction within 90 minutes, even at a concentration of 100 CFU mL^-1.

Curved 2D WS2 nanostructures: nanocasting and silent phonon mode

Layered two-dimensional (2D) materials and their heterostructures possess excellent optoelectronic properties due to their unique planar features. However, planar structures can only selectively support the fundamental optical modes, which is averse to fully exploit the potential of the 2D materials. Here, a novel type of tungsten disulfide (WS2) nanoparticle (NP) with a uniform size and morphology and highly ordered WS2 supercrystals (SCs) are synthesized by a nanocasting process using ordered mesoporous silica as a template. Due to the curved feature of individual nanostructures, their Raman signals show complex dependence behavior on the excitation wavelength, excitation power and temperature. Significantly, the silent phonon mode becomes Raman active due to the curvature of the interlaced WS2 layers. We believe that curved features will greatly enrich the optoelectronic applications of 2D materials.

Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Assessing atomic defect states and their ramifications on the electronic properties of two-dimensional van der Waals semiconducting transition metal dichalcogenides (SC-TMDs) is the primary task to expedite multi-disciplinary efforts in the promotion of next-generation electrical and optical device applications utilizing these low-dimensional materials. Here, with electron tunneling and optical spectroscopy measurements with density functional theory, we spectroscopically locate the mid-gap states from chalcogen-atom vacancies in four representative monolayer SC-TMDs-WS2, MoS2, WSe2, and MoSe2-, and carefully analyze the similarities and dissimilarities of the atomic defects in four distinctive materials regarding the physical origins of the missing chalcogen atoms and the implications to SC-mTMD properties. In addition, we address both quasiparticle and optical energy gaps of the SC-mTMD films and find out many-body interactions significantly enlarge the quasiparticle energy gaps and excitonic binding energies, when the semiconducting monolayers are encapsulated by non-interacting hexagonal boron nitride layers.

Trion-Induced Distinct Transient Behavior and Stokes Shift in WS2 Monolayers

Understanding the excitonic behavior in two-dimensional transition-metal dichalcogenides (2D TMDs) is of both fundamental interest and critical importance for optoelectronic applications. Here, we investigate the transient excitonic behavior and Stokes shift in WS₂ monolayers on both sapphire and glass substrates. Trion formation was confirmed as the origin of the distinct photoluminescence (PL) emission and Stokes shift in WS₂ monolayers. Moreover, the transient studies demonstrate faster recombination of both the exciton and the short-lived trion on the glass substrate as compared to that on the sapphire substrate, owing to the heavier n-doping and greater number of defects introduced by the glass substrate. In addition, a long-lived trion species attributed to the intervalley triplet trion was observed on the glass substrate, with a lifetime on the nanosecond time scale. These findings offer a comprehensive understanding of the excitonic behavior and Stokes shift in WS₂ monolayers and will lay the foundation for further fundamental investigations in the field.

A relative study on sonochemically synthesized mesoporous WS2 nanorods & hydrothermally synthesized WS2 nanoballs towards electrochemical sensing of psychoactive drug (Clonazepam)

In this paper, mesoporous tungsten sulfide electrocatalyst (MP-WS₂) were developed through a facile sonochemical technique (SC) and utilized as an electrocatalyst for the sensitive electrochemical detection of Psychoactive drug. The as-prepared SC-MP-WS₂ NRs and HT-WS₂ NPs (hydrothermally synthesized) were characterized using XRD, Raman, XPS, FESEM, HRTEM, BET, EDX, and electrochemical analysis, which exposed the formation of WS₂ in the form of mesoporous nanorods in shape. Further, the use of the as-developed SC-MP-WS₂ NRs and HT-WS₂ NPs as an electrocatalyst for the detection of clonazepam (CNP). Interestingly, the SC-MP-WS₂ NRs modified screen-printed carbon electrode (SC-MP-WS₂ NRs/SPCE) exhibited an excellent electrocatalytic performance, and enhanced reduction peak current when compared to HT-WS₂ NPs with unmodified electrode. Moreover, as-prepared SC-MP-WS₂ NRs/SPCE displayed wide linear response range (10-551 µM), lower detection limit (2.37 nM) and high sensitivity (24.32 µAµM^-1cm^-2). Furthermore, SC-MP-WS₂ NRs/SPCE showed an excellent selectivity even in the existence of potentially co-interfering compounds. The proposed sensor was successfully applied for the determination of CNP in biological and drug samples with acceptable recovery.