1
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Chen Z, Li R, Bai Y, Mao N, Zeer M, Go D, Dai Y, Huang B, Mokrousov Y, Niu C. Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets. NANO LETTERS 2024. [PMID: 38619844 DOI: 10.1021/acs.nanolett.3c05129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Recent advances in the manipulation of the orbital angular momentum (OAM) within the paradigm of orbitronics presents a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi2Te4 as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work, we open up new possibilities for innovative applications in topological spintronics and orbitronics.
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Affiliation(s)
- Zhiqi Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Runhan Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yingxi Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ning Mao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mahmoud Zeer
- Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52056 Aachen, Germany
| | - Dongwook Go
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yuriy Mokrousov
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Chengwang Niu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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2
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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3
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Ahn Y, Lee G, Noh N, Lee C, Le DD, Kim S, Lee Y, Hyun J, Lim CY, Cha J, Jho M, Gim S, Denlinger JD, Yang CH, Yuk JM, Han MJ, Kim Y. Converting the Bulk Transition Metal Dichalcogenides Crystal into Stacked Monolayers via Ethylenediamine Intercalation. NANO LETTERS 2023; 23:9733-9739. [PMID: 37903092 DOI: 10.1021/acs.nanolett.3c02268] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
We report the synthesis of ethylenediamine-intercalated NbSe2 and Li-ethylenediamine-intercalated MoSe2 single crystals with increased interlayer distances and their electronic structures measured by means of angle-resolved photoemission spectroscopy (ARPES). X-ray diffraction patterns and transmission electron microscopy images confirm the successful intercalation and an increase in the interlayer distance. ARPES measurement reveals that intercalated NbSe2 shows an electronic structure almost identical to that of monolayer NbSe2. Intercalated MoSe2 also returns the characteristic feature of the monolayer electronic structure, a direct band gap, which generates sizable photoluminescence even in the bulk form. Our results demonstrate that the properties and phenomena of the monolayer transition metal dichalcogenides can be achieved with large-scale bulk samples by blocking the interlayer interaction through intercalation.
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Affiliation(s)
- Yeojin Ahn
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Gyubin Lee
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Namgyu Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Chulwan Lee
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Duc Duy Le
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Sunghun Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
| | - Yeonghoon Lee
- Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
| | - Jounghoon Hyun
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Chan-Young Lim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Jaehun Cha
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Mingi Jho
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Seonggeon Gim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Jong Min Yuk
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Yeongkwan Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
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4
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Zhang J, Tancogne-Dejean N, Xian L, Boström EV, Claassen M, Kennes DM, Rubio A. Ultrafast Spin Dynamics and Photoinduced Insulator-to-Metal Transition in α-RuCl 3. NANO LETTERS 2023; 23:8712-8718. [PMID: 37695730 PMCID: PMC10540253 DOI: 10.1021/acs.nanolett.3c02668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
Laser-induced ultrafast demagnetization is a phenomenon of utmost interest and attracts significant attention because it enables potential applications in ultrafast optoelectronics and spintronics. As a spin-orbit coupling assisted magnetic insulator, α-RuCl3 provides an attractive platform to explore the physics of electronic correlations and unconventional magnetism. Using time-dependent density functional theory, we explore the ultrafast laser-induced dynamics of the electronic and magnetic structures in α-RuCl3. Our study unveils that laser pulses can introduce ultrafast demagnetizations, accompanied by an out-of-equilibrium insulator-to-metal transition in a few tens of femtoseconds. The spin response significantly depends on the laser wavelength and polarization on account of the electron correlations, band renormalizations, and charge redistributions. These findings provide physical insights into the coupling between the electronic and magnetic degrees of freedom in α-RuCl3 and shed light on suppressing the long-range magnetic orders and reaching a proximate spin liquid phase for two-dimensional magnets on an ultrafast time scale.
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Affiliation(s)
- Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Nicolas Tancogne-Dejean
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Lede Xian
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Emil Viñas Boström
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Martin Claassen
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Dante M Kennes
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
- Institut für Theorie der Statistischen Physik, RWTH Aachen University and JARA-Fundamentals of Future Information Technology, 52056 Aachen, Germany
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center for Computational Quantum Physics (CCQ), The Flatiron Institute, 162 Fifth avenue, New York, New York 10010, United States
- Nano-Bio Spectroscopy Group, Universidad del País Vasco, 20018 San Sebastián, Spain
- Center for Computational Quantum Physics (CCQ), The Flatiron Institute, 162 Fifth Avenue, New York, New York 10010, United States
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5
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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6
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Rossi A, Johnson C, Balgley J, Thomas JC, Francaviglia L, Dettori R, Schmid AK, Watanabe K, Taniguchi T, Cothrine M, Mandrus DG, Jozwiak C, Bostwick A, Henriksen EA, Weber-Bargioni A, Rotenberg E. Direct Visualization of the Charge Transfer in a Graphene/α-RuCl 3 Heterostructure via Angle-Resolved Photoemission Spectroscopy. NANO LETTERS 2023; 23:8000-8005. [PMID: 37639696 PMCID: PMC10510581 DOI: 10.1021/acs.nanolett.3c01974] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 08/21/2023] [Indexed: 08/31/2023]
Abstract
We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl3) heterostructure using a combination of experimental techniques. α-RuCl3 is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl3, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl3. Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.
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Affiliation(s)
- Antonio Rossi
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- The
Molecular Foundry, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Center
for Nanotechnology Innovation @ NEST, Istituto
Italiano di Tecnologia, Pisa 56127, Italy
| | - Cameron Johnson
- The
Molecular Foundry, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Jesse Balgley
- Department
of Physics and Institute for Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - John C. Thomas
- The
Molecular Foundry, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Luca Francaviglia
- The
Molecular Foundry, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Riccardo Dettori
- Physical
and Life Sciences Directorate, Lawrence
Livermore National Laboratory, Livermore, California 94550, United States
| | - Andreas K. Schmid
- The
Molecular Foundry, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Matthew Cothrine
- Material
Science & Technology Division, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David G. Mandrus
- Material
Science & Technology Division, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Chris Jozwiak
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Erik A. Henriksen
- Department
of Physics and Institute for Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Alexander Weber-Bargioni
- The
Molecular Foundry, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
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7
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Hussain G, Fakhredine A, Islam R, Sattigeri RM, Autieri C, Cuono G. Correlation-Driven Topological Transition in Janus Two-Dimensional Vanadates. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1649. [PMID: 36837286 PMCID: PMC9965066 DOI: 10.3390/ma16041649] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Revised: 02/09/2023] [Accepted: 02/13/2023] [Indexed: 06/18/2023]
Abstract
The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z = P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), and an in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials.
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Affiliation(s)
- Ghulam Hussain
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02668 Warsaw, Poland
| | - Amar Fakhredine
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02668 Warsaw, Poland
| | - Rajibul Islam
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02668 Warsaw, Poland
| | - Raghottam M. Sattigeri
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02668 Warsaw, Poland
| | - Carmine Autieri
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02668 Warsaw, Poland
| | - Giuseppe Cuono
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02668 Warsaw, Poland
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8
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Liu K, Mao S, Zhang S, Zhou J. Photoinduced Rippling of Two-Dimensional Hexagonal Nitride Monolayers. NANO LETTERS 2022; 22:9006-9012. [PMID: 36342788 DOI: 10.1021/acs.nanolett.2c03238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Inducing structural changes and deformation using noninvasive methods, such as ultrafast laser technology, is an attractive route to multiple optomechanical and optoelectronic applications. Here, we show how photon excitation could accumulate in-plane stress and induce long-wavelength ripples in two-dimensional (2D) materials. Numerical results based on first-principles calculations and a continuum model predict that long-range nanoscale rippling could emerge under photon excitation in hexagonal nitride single atomic sheets. The photosoftened transverse acoustic mode dominates the out-of-plane distortion of the sheet, and the resultant rippling pattern strongly depends on the boundary condition. We reveal that the wavelength and height of the ripple scale as I-1/3 and I1/6, respectively, where I is the incident light energy flux. Our findings based on multiscale theory and simulations elucidate the interplay between carrier excitation, phonon dispersion, and long-range mechanical deformations, which could find potential usage in flexible electronics and electromechanical devices.
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Affiliation(s)
- Kun Liu
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
| | - Sheng Mao
- Department of Mechanics and Engineering Science, BIC-ESAT, College of Engineering, Peking University, Beijing100871, China
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei230026, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
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9
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Lam D, Lebedev D, Kuo L, Sangwan VK, Szydłowska BM, Ferraresi F, Söll A, Sofer Z, Hersam MC. Liquid-Phase Exfoliation of Magnetically and Optoelectronically Active Ruthenium Trichloride Nanosheets. ACS NANO 2022; 16:11315-11324. [PMID: 35714054 DOI: 10.1021/acsnano.2c04888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
α-RuCl3 is a layered transition metal halide that possesses a range of exotic magnetic, optical, and electronic properties including fractional excitations indicative of a proximate Kitaev quantum spin liquid (QSL). While previous reports have explored these properties on idealized single crystals or mechanically exfoliated samples, the scalable production of α-RuCl3 nanosheets has not yet been demonstrated. Here, we perform liquid-phase exfoliation (LPE) of α-RuCl3 through an electrochemically assisted approach, which yields ultrathin, electron-doped α-RuCl3 nanosheets that are then assembled into electrically conductive large-area thin films. The crystalline integrity of the α-RuCl3 nanosheets following LPE is confirmed through a wide range of structural and chemical analyses. Moreover, the physical properties of the LPE α-RuCl3 nanosheets are investigated through electrical, optical, and magnetic characterization methods, which reveal a structural phase transition at 230 K that is consistent with the onset of Kitaev paramagnetism in addition to an antiferromagnetic transition at 2.6 K. Intercalated ions from the electrochemical LPE protocol favorably alter the optical response of the α-RuCl3 nanosheets, enabling large-area Mott insulator photodetectors that operate at telecommunications-relevant infrared wavelengths near 1.55 μm. These photodetectors show a linear photocurrent response as a function of incident power, which suggests negligible trap-mediated recombination or photothermal effects, ultimately resulting in a photoresponsivity of ≈2 mA/W.
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Affiliation(s)
- David Lam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Lidia Kuo
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Beata M Szydłowska
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Filippo Ferraresi
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Aljoscha Söll
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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10
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Bandyopadhyay A, Li S, Frauenheim T. Role of External Stimuli in Engineering Magnetic Phases and Real-Time Spin Dynamics of Co/Mn Oxides. J Phys Chem Lett 2022; 13:6755-6761. [PMID: 35852496 DOI: 10.1021/acs.jpclett.2c01716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Magnetism in atomically thin two-dimensional (2D) materials can be easily manipulated by alloying, functionalization, external ultrafast laser pulse, strain, electric field, etc. In this work, we have performed a series of spin-resolved density functional theory calculations on 2D magnetic hexagonal transition-metal oxide alloys, CoMnO4. We have explored different alloy patterns and found the most stable magnetic phases in each pattern, resulting in a stable ferromagnetic (FM) ground state depending upon the pattern. We have used Janus functionalization in these materials to tune the magnetic nature of the system from FM to antiferromagnetic (AFM) states. To further control the spin dynamics, we have applied an ultrafast laser pulse to the Janus systems to explore an AFM-to-FM transition process. Finally, applying strain and electric field to the Janus alloys allows us to tune the structure-property relationship in the 2D layers to obtain desirable spin arrangements.
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Affiliation(s)
- Arkamita Bandyopadhyay
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359 Bremen, Germany
| | - Shuo Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P.R. China
- Beijing Computational Science Research Center (CSRC), Beijing 100193, China
- Shenzhen Computational Science and Applied Research (CSAR) Institute, Shenzhen 518110, China
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359 Bremen, Germany
- Beijing Computational Science Research Center (CSRC), Beijing 100193, China
- Shenzhen Computational Science and Applied Research (CSAR) Institute, Shenzhen 518110, China
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11
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Ren W, Jin K, Ma C, Ge C, Guo E, Wang C, Xu X, Yang G. Manipulating the electronic structure and physical properties in monolayer Mo 2I 3Br 3via strain and doping. NANOSCALE 2022; 14:8934-8943. [PMID: 35642506 DOI: 10.1039/d2nr01002j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo2I3Br3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo2I3Br3. We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo2I3Br3, respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo2I3Br3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo2I3Br3, transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo2I3Br3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.
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Affiliation(s)
- Wenning Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Erjia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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12
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He J, Li S, Zhou L, Frauenheim T. Ultrafast Light-Induced Ferromagnetic State in Transition Metal Dichalcogenides Monolayers. J Phys Chem Lett 2022; 13:2765-2771. [PMID: 35315669 DOI: 10.1021/acs.jpclett.2c00443] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultrafast optical control of magnetism had great potential to revolutionize magnetic storage technology and spintronics, but for now, its potential remains mostly untapped in two-dimensional (2D) magnets. Here, using the state-of-the-art real-time time-dependent density functional theory (rt-TDDFT), we demonstrate that an ultrafast laser pulse can induce a ferromagnetic state in nonmagnetic MoSe2 monolayers interfaced with van der Waals (vdW) ferromagnetic MnSe2. Our results show that the transient ferromagnetism in MoSe2 derives from photoinduced direct ultrafast interlayer spin transfer from Mn to Mo via a vdW-coupled interface, albeit with a delay of approximately a few femtoseconds. This delay was strongly dependent on laser duration and interlayer coupling, which could be used to tune the amplitude and rate spin transfer. Furthermore, we have also shown that ferromagnetic states can be photoinduced in other transition metal dichalcogenides (TMDs), such as PtS2 and TaSe2 monolayers. Overall, our findings provide crucial physical insights for exploring light-induced interlayer spin and charge dynamics in 2D magnetic systems.
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Affiliation(s)
- Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic
| | - Shuo Li
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Liujiang Zhou
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
- Beijing Computational Science Research Center, Beijing 100193, China
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518110, China
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13
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Liu N, Zhou S, Zhao J. Photoinduced Spin Injection and Ferromagnetism in 2D Group III Monochalcogenides. J Phys Chem Lett 2022; 13:590-597. [PMID: 35015540 DOI: 10.1021/acs.jpclett.1c03994] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Strong light-matter interactions in low-dimensional materials offer an opportunity for flexible property-tuning by optical switching. Herein, we exploit photoexcitation for spin injection into semiconductors by rationally designing heterojunctions having distinct dynamic behavior for photocarriers in two spin channels. As a proof-of-concept, we trigger homogeneous magnetism in a group III monochalcogenide monolayer (MX with M = In, Ga; X = S, Se) by placing it on a ferromagnetic CrI3 substrate under light illumination. Our time-dependent ab initio nonadiabatic molecular dynamics simulations reveal fast electron-hole separation for the majority spin channel but rapid recombination for the minority spin channel at this heterostructure. The majority carriers cause hole doping and strong ferromagnetic ordering in the MX sheet, with magnetic moment tunable by the injected carriers' concentration. The interplay between photoexcited hole carriers, the Van Hove singularity of MX monolayers, and interfacial charge transfer provides essential physical insights for nondestructively manipulating charge and spin in two-dimensional semiconductors via light switching.
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Affiliation(s)
- Nanshu Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, P.R. China
| | - Si Zhou
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
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14
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Li D, Li S, Zhong C, He J. Tuning magnetism at the two-dimensional limit: a theoretical perspective. NANOSCALE 2021; 13:19812-19827. [PMID: 34825688 DOI: 10.1039/d1nr06835k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for manipulating the magnetic properties at the atomically thin and 2D limit. This review gives recent progress in the emergent 2D magnets and heterostructures, focusing on the theory side. We summarize different theoretical models, ranging from the atomic to micrometer-scale, used to describe magnetic orders. Then, the current strategies for tuning magnetism in 2D materials are further discussed, such as electric field, magnetic field, strain, optics, chemical functionalization, and spin-orbit engineering. Finally, we conclude with the future challenges and opportunities for 2D magnetism.
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Affiliation(s)
- Dongzhe Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China.
| | - Shuo Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China.
| | - Chengyong Zhong
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China.
| | - Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 2835, Bremen, Germany
- Department of Physical and Macromolecular Chemistry & Charles University Centre of Advanced Materials, Faculty of Science, Charles University in Prague, Hlavova 8, Prague 2, 128 43, Czech Republic.
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15
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Miao N, Sun Z. Computational design of two‐dimensional magnetic materials. WIRES COMPUTATIONAL MOLECULAR SCIENCE 2021. [DOI: 10.1002/wcms.1545] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Naihua Miao
- School of Materials Science and Engineering Beihang University Beijing China
- Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary Science, Beihang University Beijing China
| | - Zhimei Sun
- School of Materials Science and Engineering Beihang University Beijing China
- Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary Science, Beihang University Beijing China
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16
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Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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17
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Chu J, Wang Y, Wang X, Hu K, Rao G, Gong C, Wu C, Hong H, Wang X, Liu K, Gao C, Xiong J. 2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004469. [PMID: 33325574 DOI: 10.1002/adma.202004469] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Revised: 07/21/2020] [Indexed: 06/12/2023]
Abstract
The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.
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Affiliation(s)
- Junwei Chu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xuepeng Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kai Hu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Gaofeng Rao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chunchun Wu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Chunlei Gao
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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18
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Liu B, Liu S, Yang L, Chen Z, Zhang E, Li Z, Wu J, Ruan X, Xiu F, Liu W, He L, Zhang R, Xu Y. Light-Tunable Ferromagnetism in Atomically Thin Fe_{3}GeTe_{2} Driven by Femtosecond Laser Pulse. PHYSICAL REVIEW LETTERS 2020; 125:267205. [PMID: 33449751 DOI: 10.1103/physrevlett.125.267205] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Revised: 09/03/2020] [Accepted: 12/11/2020] [Indexed: 05/16/2023]
Abstract
The recent discovery of intrinsic ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has opened up a new arena for spintronics, raising an opportunity of achieving tunable intrinsic 2D vdW magnetism. Here, we show that the magnetization and the magnetic anisotropy energy (MAE) of few-layered Fe_{3}GeTe_{2} (FGT) is strongly modulated by a femtosecond laser pulse. Upon increasing the femtosecond laser excitation intensity, the saturation magnetization increases in an approximately linear way and the coercivity determined by the MAE decreases monotonically, showing unambiguously the effect of the laser pulse on magnetic ordering. This effect observed at room temperature reveals the emergence of light-driven room-temperature (300 K) ferromagnetism in 2D vdW FGT, as its intrinsic Curie temperature T_{C} is ∼200 K. The light-tunable ferromagnetism is attributed to the changes in the electronic structure due to the optical doping effect. Our findings pave a novel way to optically tune 2D vdW magnetism and enhance the T_{C} up to room temperature, promoting spintronic applications at or above room temperature.
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Affiliation(s)
- Bo Liu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Long Yang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhendong Chen
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Wu
- York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York YO10 5DD, United Kingdom
| | - Xuezhong Ruan
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Wenqing Liu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW20 0EX, United Kingdom
| | - Liang He
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Rong Zhang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yongbing Xu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York YO10 5DD, United Kingdom
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19
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Vivanco HK, Trump BA, Brown CM, McQueen TM. Competing antiferromagnetic-ferromagnetic states in a d7 Kitaev honeycomb magnet. PHYSICAL REVIEW. B 2020; 102:10.1103/PhysRevB.102.224411. [PMID: 37719682 PMCID: PMC10502901 DOI: 10.1103/physrevb.102.224411] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/19/2023]
Abstract
The Kitaev model is a rare example of an analytically solvable and physically instantiable Hamiltonian yielding a topological quantum spin liquid ground state. Here we report signatures of Kitaev spin liquid physics in the honeycomb magnet Li3Co2SbO6, built of high-spin d 7 (Co2+) ions, in contrast to the more typical low-spin d 5 electron configurations in the presence of large spin-orbit coupling. Neutron powder diffraction measurements, heat capacity, and magnetization studies support the development of a long-range antiferromagnetic order space group of C C 2/ m , below T N = 11 K at μ 0 H = 0 T . The magnetic entropy recovered between T = 2 and 50 K is estimated to be 0.6 R ln2 , in good agreement with the value expected for systems close to a Kitaev quantum spin liquid state. The temperature-dependent magnetic order parameter demonstrates a β value of 0.19(3), consistent with XY anisotropy and in-plane ordering, with Ising-like interactions between layers. Further, we observe a spin-flop-driven crossover to ferromagnetic order with space group of C 2/ m under an applied magnetic field of μ 0 H ≈ 0.7 T at T = 2 K . Magnetic structure analysis demonstrates these magnetic states are competing at finite applied magnetic fields even below the spin-flop transition. Both the d 7 compass model, a quantitative comparison of the specific heat of Li3Co2SbO6, and related honeycomb cobaltates to the anisotropic Kitaev model further support proximity to a Kitaev spin liquid state. This material demonstrates the rich playground of high-spin d 7 systems for spin liquid candidates and complements known d 5 Ir- and Ru-based materials.
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Affiliation(s)
- Hector K. Vivanco
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - Benjamin A. Trump
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Craig M. Brown
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, Delaware 19716, USA
| | - Tyrel M. McQueen
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, USA
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20
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Motome Y, Sano R, Jang S, Sugita Y, Kato Y. Materials design of Kitaev spin liquids beyond the Jackeli-Khaliullin mechanism. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:404001. [PMID: 32235048 DOI: 10.1088/1361-648x/ab8525] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2020] [Accepted: 03/31/2020] [Indexed: 06/11/2023]
Abstract
The Kitaev spin liquid provides a rare example of well-established quantum spin liquids in more than one dimension. It is obtained as the exact ground state of the Kitaev spin model with bond-dependent anisotropic interactions. The peculiar interactions can be yielded by the synergy of spin-orbit coupling and electron correlations for specific electron configuration and lattice geometry, which is known as the Jackeli-Khaliullin mechanism. Based on this mechanism, there has been a fierce race for the materialization of the Kitaev spin liquid over the last decade, but the candidates have been still limited mostly to 4d- and 5d-electron compounds including cations with the low-spind5electron configuration, such as Ir4+and Ru3+. Here we discuss recent efforts to extend the material perspective beyond the Jackeli-Khaliullin mechanism, by carefully reexamining the two requisites, formation of thejeff= 1/2 doublet and quantum interference between the exchange processes, for not onlyd- but alsof-electron systems. We present three examples: the systems including Co2+and Ni3+with the high-spind7electron configuration, Pr4+with thef1-electron configuration, and polar asymmetry in the lattice structure. In particular, the latter two are intriguing since they may realize the antiferromagnetic Kitaev interactions, in contrast to the ferromagnetic ones in the existing candidates. This partial overview would stimulate further material exploration of the Kitaev spin liquids and its topological properties due to fractional excitations.
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Affiliation(s)
- Yukitoshi Motome
- Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Ryoya Sano
- Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Seonghoon Jang
- Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Yusuke Sugita
- Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Yasuyuki Kato
- Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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21
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Wang F, Zhang Z, Zhang Y, Nie A, Zhao W, Wang D, Huang F, Zhai T. Honeycomb RhI 3 Flakes with High Environmental Stability for Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2001979. [PMID: 32419271 DOI: 10.1002/adma.202001979] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2020] [Revised: 04/22/2020] [Accepted: 04/23/2020] [Indexed: 06/11/2023]
Abstract
The emerging 2D layered transition metal trihalides (MX3 ) have attracted extremely high interest given their exceptional structural and physical properties. Continuing to extend the library of 2D MX3 is essential for exploring new physical phenomena and enabling new functionality. Herein, the optical and electrical properties and the photodetection behavior of atomically thin RhI3 flakes exfoliated from bulk crystals are reported. This compound exhibits superior air and thermal stability, as well as thickness-dependent bandgap from 1.1 (18L) to 1.4 eV (2L). Field-effect transistors based on the few-layer RhI3 flakes display n-type semiconducting behavior with competitive mobility of 2.5 cm2 V-1 s-1 and ON/OFF current ratio of 4 × 104 . Importantly, the outstanding responsivity of 11.5 A W-1 and high specific detectivity of 2 × 1010 Jones are recorded from the RhI3 photodetectors under 980 nm illumination at room temperature in air. These findings indicate a variety of potential applications of atomically thin RhI3 flakes in future 2D-material-based electronic and optoelectronic devices.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zhuang Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yue Zhang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Anmin Nie
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Wei Zhao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Dong Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, P. R. China
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22
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Geng J, Chan IN, Ai H, Lo KH, Kawazoe Y, Ng KW, Pan H. Magnetic and electronic properties of 2D TiX3 (X = F, Cl, Br and I). Phys Chem Chem Phys 2020; 22:17632-17638. [DOI: 10.1039/d0cp02072a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A two-step transition in the magnetic state occurs in bilayer TiI3 under applied strain.
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Affiliation(s)
- Jiazhong Geng
- Institute of Applied Physics and Materials Engineering
- University of Macau
- Macao
- P. R. China
| | - Iat Neng Chan
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau
- P. R. China
| | - Haoqiang Ai
- Department of Electrochemical Engineering, Faculty of Science and Technology
- University of Macau
- P. R. China
| | - Kin Ho Lo
- Department of Electrochemical Engineering, Faculty of Science and Technology
- University of Macau
- P. R. China
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center
- Tohoku University
- Sendai
- Japan
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology
| | - Kar Wei Ng
- Institute of Applied Physics and Materials Engineering
- University of Macau
- Macao
- P. R. China
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering
- University of Macau
- Macao
- P. R. China
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau
| |
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