1
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Spellberg JL, Kodaimati L, Joshi PP, Mirzajani N, Liang L, King SB. Electronic structure orientation as a map of in-plane antiferroelectricity in β'-In 2Se 3. SCIENCE ADVANCES 2024; 10:eado2136. [PMID: 38875325 PMCID: PMC11177895 DOI: 10.1126/sciadv.ado2136] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Accepted: 05/10/2024] [Indexed: 06/16/2024]
Abstract
Antiferroelectric (AFE) materials are excellent candidates for sensors, capacitors, and data storage due to their electrical switchability and high-energy storage capacity. However, imaging the nanoscale landscape of AFE domains is notoriously inaccessible, which has hindered development and intentional tuning of AFE materials. Here, we demonstrate that polarization-dependent photoemission electron microscopy can resolve the arrangement and orientation of in-plane AFE domains on the nanoscale, despite the absence of a net lattice polarization. Through direct determination of electronic transition orientations and analysis of domain boundary constraints, we establish that antiferroelectricity in β'-In2Se3 is a robust property from the scale of tens of nanometers to tens of micrometers. Ultimately, the method for imaging AFE domain organization presented here opens the door to investigations of the influence of domain formation and orientation on charge transport and dynamics.
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Affiliation(s)
- Joseph L Spellberg
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Lina Kodaimati
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Prakriti P Joshi
- James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Nasim Mirzajani
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Liangbo Liang
- Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Sarah B King
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- James Franck Institute, University of Chicago, Chicago, IL 60637, USA
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2
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Cruciani L, van Vliet S, Troglia A, Bliem R, van Druten K, Planken P. Femtosecond Laser-Induced Emission of Coherent Terahertz Pulses from Ruthenium Thin Films. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:22662-22672. [PMID: 38037637 PMCID: PMC10683066 DOI: 10.1021/acs.jpcc.3c05525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Revised: 10/12/2023] [Accepted: 10/19/2023] [Indexed: 12/02/2023]
Abstract
We demonstrate emission of electromagnetic pulses with frequencies in the terahertz (THz) range from ruthenium thin films through a second-order nonlinear optical process. Ruthenium deposited on different substrates showed different THz emission properties. We provide evidence that for Ru on glass above a certain power threshold, laser-induced oxidation occurs, resulting in an increased slope of the linear dependence of the THz electric field amplitude on pump power. The THz electric field is mainly polarized parallel to the sample surface, pointing in the same direction everywhere. In contrast to Ru on glass, the electric field amplitude of the THz pulses emitted by Ru on sapphire and on CaF2 shows a simple single linear dependence on pump power, and it is polarized orthogonal to the sample surface. In this case, thermal oxidation in an oven enhances the emission and introduces an additional polarization component along the sample surface. This component also points in the same direction everywhere on the surface, similar to the as-deposited Ru on glass. Although the precise THz generation mechanism remains an open question, our results show a strong correlation between the emission strength and the degree of oxidation. Furthermore, the results highlight the importance of the interfaces, i.e., both the choice of the substrate and the chemical composition of the top surface in THz emission experiments. Knowledge of the state of the sample surface is therefore crucial for the interpretation of THz emission experiments from (nonmagnetic) metal surfaces.
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Affiliation(s)
- Lorenzo Cruciani
- Advanced
Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Stefan van Vliet
- Advanced
Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands
| | - Alessandro Troglia
- Advanced
Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands
| | - Roland Bliem
- Advanced
Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Klaasjan van Druten
- Advanced
Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Paul Planken
- Advanced
Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
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3
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Guzelturk B, Yang T, Liu YC, Wei CC, Orenstein G, Trigo M, Zhou T, Diroll BT, Holt MV, Wen H, Chen LQ, Yang JC, Lindenberg AM. Sub-Nanosecond Reconfiguration of Ferroelectric Domains in Bismuth Ferrite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306029. [PMID: 37611614 DOI: 10.1002/adma.202306029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 07/28/2023] [Indexed: 08/25/2023]
Abstract
Domain switching is crucial for achieving desired functions in ferroic materials that are used in various applications. Fast control of domains at sub-nanosecond timescales remains a challenge despite its potential for high-speed operation in random-access memories, photonic, and nanoelectronic devices. Here, ultrafast laser excitation is shown to transiently melt and reconfigure ferroelectric stripe domains in multiferroic bismuth ferrite on a timescale faster than 100 picoseconds. This dynamic behavior is visualized by picosecond- and nanometer-resolved X-ray diffraction and time-resolved X-ray diffuse scattering. The disordering of stripe domains is attributed to the screening of depolarization fields by photogenerated carriers resulting in the formation of charged domain walls, as supported by phase-field simulations. Furthermore, the recovery of disordered domains exhibits subdiffusive growth on nanosecond timescales, with a non-equilibrium domain velocity reaching up to 10 m s-1 . These findings present a new approach to image and manipulate ferroelectric domains on sub-nanosecond timescales, which can be further extended into other complex photoferroic systems to modulate their electronic, optical, and magnetic properties beyond gigahertz frequencies. This approach could pave the way for high-speed ferroelectric data storage and computing, and, more broadly, defines new approaches for visualizing the non-equilibrium dynamics of heterogeneous and disordered materials.
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Affiliation(s)
- Burak Guzelturk
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Tiannan Yang
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16801, USA
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yu-Chen Liu
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Chia-Chun Wei
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Gal Orenstein
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Mariano Trigo
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Tao Zhou
- Nanoscience Science and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Benjamin T Diroll
- Nanoscience Science and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Martin V Holt
- Nanoscience Science and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Haidan Wen
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Long-Qing Chen
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16801, USA
| | - Jan-Chi Yang
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Aaron M Lindenberg
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Department of Photon Science, Stanford University and SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
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4
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Smith KA, Ramkumar SP, Du K, Xu X, Cheong SW, Gilbert Corder SN, Bechtel HA, Nowadnick EA, Musfeldt JL. Real-Space Infrared Spectroscopy of Ferroelectric Domain Walls in Multiferroic h-(Lu,Sc)FeO 3. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7562-7571. [PMID: 36715538 DOI: 10.1021/acsami.2c19600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We employ synchrotron-based near-field infrared spectroscopy to image the phononic properties of ferroelectric domain walls in hexagonal (h) Lu0.6Sc0.4FeO3, and we compare our findings with a detailed symmetry analysis, lattice dynamics calculations, and prior models of domain-wall structure. Rather than metallic and atomically thin as observed in the rare-earth manganites, ferroelectric walls in h-Lu0.6Sc0.4FeO3 are broad and semiconducting, a finding that we attribute to the presence of an A-site substitution-induced intermediate phase that reduces strain and renders the interior of the domain wall nonpolar. Mixed Lu/Sc occupation on the A site also provides compositional heterogeneity over micron-sized length scales, and we leverage the fact that Lu and Sc cluster in different ratios to demonstrate that the spectral characteristics at the wall are robust even in different compositional regimes. This work opens the door to broadband imaging of physical and chemical heterogeneity in ferroics and represents an important step toward revealing the rich properties of these flexible defect states.
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Affiliation(s)
- Kevin A Smith
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sriram P Ramkumar
- Department of Materials Science and Engineering, University of California, Merced, California 95343 United States
| | - Kai Du
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Xianghan Xu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
- Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Stephanie N Gilbert Corder
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Hans A Bechtel
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Elizabeth A Nowadnick
- Department of Materials Science and Engineering, University of California, Merced, California 95343 United States
| | - Janice L Musfeldt
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
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5
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Geng WR, Tang YL, Zhu YL, Wang YJ, Wu B, Yang LX, Feng YP, Zou MJ, Shi TT, Cao Y, Ma XL. Magneto-Electric-Optical Coupling in Multiferroic BiFeO 3 -Based Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106396. [PMID: 35730916 DOI: 10.1002/adma.202106396] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2021] [Revised: 06/17/2022] [Indexed: 06/15/2023]
Abstract
Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO3 -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO3 -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Tong-Tong Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
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6
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Lee HJ, Ahn Y, Marks SD, Sri Gyan D, Landahl EC, Lee JY, Kim TY, Unithrattil S, Chun SH, Kim S, Park SY, Eom I, Adamo C, Schlom DG, Wen H, Lee S, Jo JY, Evans PG. Subpicosecond Optical Stress Generation in Multiferroic BiFeO 3. NANO LETTERS 2022; 22:4294-4300. [PMID: 35612522 DOI: 10.1021/acs.nanolett.1c04831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Optical excitation leads to ultrafast stress generation in the prototypical multiferroic BiFeO3. The time scales of stress generation are set by the dynamics of the population of excited electronic states and the coupling of the electronic configuration to the structure. X-ray free-electron laser diffraction reveals high-wavevector subpicosecond-time scale stress generation following ultraviolet excitation of a BiFeO3 thin film. Stress generation includes a fast component with a 1/e rise time with an upper limit of 300 fs and longer-rise time components extending to 1.5 ps. The contributions of the fast and delayed components vary as a function of optical fluence, with a reduced a fast-component contribution at high fluence. The results provide insight into stress-generation mechanisms linked to the population of excited electrons and point to new directions in the application of nanoscale multiferroics and related ferroic complex oxides. The fast component of the stress indicates that structural parameters and properties of ferroelectric thin film materials can be optically modulated with 3 dB bandwidths of at least 0.5 THz.
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Affiliation(s)
- Hyeon Jun Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Youngjun Ahn
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Samuel D Marks
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Deepankar Sri Gyan
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Eric C Landahl
- Department of Physics, DePaul University, Chicago, Illinois 60614, United States
| | - Jun Young Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Tae Yeon Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Sanjith Unithrattil
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Sae Hwan Chun
- Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, South Korea
| | - Sunam Kim
- Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, South Korea
| | - Sang-Youn Park
- Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, South Korea
| | - Intae Eom
- Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, South Korea
| | - Carolina Adamo
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straβe 2, 12489 Berlin, Germany
| | - Haidan Wen
- Materials Science Division and X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Sooheyong Lee
- Korea Research Institute of Standards and Science, Daejeon 34113, South Korea
- Department of Nano Science, University of Science and Technology, Daejeon 34113, South Korea
| | - Ji Young Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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7
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Andrade X, Pemmaraju CD, Kartsev A, Xiao J, Lindenberg A, Rajpurohit S, Tan LZ, Ogitsu T, Correa AA. Inq, a Modern GPU-Accelerated Computational Framework for (Time-Dependent) Density Functional Theory. J Chem Theory Comput 2021; 17:7447-7467. [PMID: 34726888 DOI: 10.1021/acs.jctc.1c00562] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
We present inq, a new implementation of density functional theory (DFT) and time-dependent DFT (TDDFT) written from scratch to work on graphic processing units (GPUs). Besides GPU support, inq makes use of modern code design features and takes advantage of newly available hardware. By designing the code around algorithms, rather than against specific implementations and numerical libraries, we aim to provide a concise and modular code. The result is a fairly complete DFT/TDDFT implementation in roughly 12 000 lines of open-source C++ code representing a modular platform for community-driven application development on emerging high-performance computing architectures.
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Affiliation(s)
- Xavier Andrade
- Quantum Simulations Group, Lawrence Livermore National Laboratory, Livermore, California 94551, United States
| | - Chaitanya Das Pemmaraju
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Alexey Kartsev
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jun Xiao
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Aaron Lindenberg
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Sangeeta Rajpurohit
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Liang Z Tan
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Tadashi Ogitsu
- Quantum Simulations Group, Lawrence Livermore National Laboratory, Livermore, California 94551, United States
| | - Alfredo A Correa
- Quantum Simulations Group, Lawrence Livermore National Laboratory, Livermore, California 94551, United States
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8
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Zhang Y, Dai J, Zhong X, Zhang D, Zhong G, Li J. Probing Ultrafast Dynamics of Ferroelectrics by Time-Resolved Pump-Probe Spectroscopy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102488. [PMID: 34632722 PMCID: PMC8596111 DOI: 10.1002/advs.202102488] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Revised: 07/29/2021] [Indexed: 05/26/2023]
Abstract
Ferroelectric materials have been a key research topic owing to their wide variety of modern electronic and photonic applications. For the quick exploration of higher operating speed, smaller size, and superior efficiencies of novel ferroelectric devices, the ultrafast dynamics of ferroelectrics that directly reflect their respond time and lifetimes have drawn considerable attention. Driven by time-resolved pump-probe spectroscopy that allows for probing, controlling, and modulating dynamic processes of ferroelectrics in real-time, much research efforts have been made to understand and exploit the ultrafast dynamics of ferroelectric. Herein, the current state of ultrafast dynamic features of ferroelectrics tracked by time-resolved pump-probe spectroscopy is reviewed, which includes ferroelectrics order parameters of polarization, lattice, spin, electronic excitation, and their coupling. Several potential perspectives and possible further applications combining ultrafast pump-probe spectroscopy and ferroelectrics are also presented. This review offers a clear guidance of ultrafast dynamics of ferroelectric orders, which may promote the rapid development of next-generation devices.
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Affiliation(s)
- Yuan Zhang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Junfeng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Xiangli Zhong
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China
| | - Dongwen Zhang
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha, Hunan, 410073, China
| | - Gaokuo Zhong
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Jiangyu Li
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
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9
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Lei L, Liu L, Lu X, Mei F, Shen H, Hu X, Yan S, Huang F, Zhu J. Controllable Distribution and Reversible Migration of Charges in BiFeO 3-Based Films on Si Substrates. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43787-43794. [PMID: 34467752 DOI: 10.1021/acsami.1c14060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In ferroelectric-based integrated devices, there are usually buffer layers between ferroelectric films and semiconductor substrates. Here, Bix%FeO3-δ (x = 95, 100, and 105) (BFOx) films are prepared directly on n-Si substrates by the sol-gel method, and the variation of the hysteresis loops with Bi content and heat treatment is investigated. With the help of the dielectric measurement and the composition analysis, a PN heterojunction is believed to exist at the BFOx/Si interface. The Bi/Fe ratio determines not only the type and concentration of charged defects in the films but also the height of the interface barrier and its binding effect on mobile charges. Furthermore, the distribution and the migration of charges can be regulated reversibly by heat treatment. This work reveals the interaction between ferroelectric films and semiconductor substrates, providing an important reference for the design and application of ferroelectric/semiconductor heterostructures.
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Affiliation(s)
- Lin Lei
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Lin Liu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Xiaomei Lu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Fang Mei
- Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023, China
| | - Hui Shen
- School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
| | - Xueli Hu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Shuo Yan
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Fengzhen Huang
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Jinsong Zhu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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10
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Ahn Y, Everhardt AS, Lee HJ, Park J, Pateras A, Damerio S, Zhou T, DiChiara AD, Wen H, Noheda B, Evans PG. Dynamic Tilting of Ferroelectric Domain Walls Caused by Optically Induced Electronic Screening. PHYSICAL REVIEW LETTERS 2021; 127:097402. [PMID: 34506196 DOI: 10.1103/physrevlett.127.097402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2020] [Accepted: 06/25/2021] [Indexed: 06/13/2023]
Abstract
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO_{3} thin film by an above-band-gap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the a/b and a/c domain phases coexist but is absent at 343 K in the better ordered single-phase a/c regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity.
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Affiliation(s)
- Youngjun Ahn
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Arnoud S Everhardt
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG- Groningen, Netherlands
| | - Hyeon Jun Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Joonkyu Park
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Anastasios Pateras
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Silvia Damerio
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG- Groningen, Netherlands
| | - Tao Zhou
- ID01/ESRF, 71 Avenue des Martyrs, 38000 Grenoble Cedex, France
| | - Anthony D DiChiara
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Haidan Wen
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG- Groningen, Netherlands
- CogniGron Center, University of Groningen, 9747AG- Groningen, Netherlands
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
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11
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Zhang S, Wang J, Wen S, Jiang M, Xiao H, Ding X, Wang N, Li M, Zu X, Li S, Yam C, Huang B, Qiao L. Approaching Charge Separation Efficiency to Unity without Charge Recombination. PHYSICAL REVIEW LETTERS 2021; 126:176401. [PMID: 33988439 DOI: 10.1103/physrevlett.126.176401] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Revised: 10/30/2020] [Accepted: 03/25/2021] [Indexed: 06/12/2023]
Abstract
Improving the efficiency of charge separation (CS) and charge transport (CT) is essential for almost all optoelectronic applications, yet its maximization remains a big challenge. Here we propose a conceptual strategy to achieve CS efficiency close to unity and simultaneously avoid charge recombination (CR) during CT in a ferroelectric polar-discontinuity (PD) superlattice structure, as demonstrated in (BaTiO_{3})_{m}/(BiFeO_{3})_{n}, which is fundamentally different from the existing mechanisms. The competition of interfacial dipole and ferroelectric PD induces opposite band bending in BiFeO_{3} and BaTiO_{3} sublattices. Consequently, the photoexcited electrons (e) and holes (h) in individual sublattices move forward to the opposite interfaces forming electrically isolated e and h channels, leading to a CS efficiency close to unity. Importantly, the spatial isolation of conduction channels in (BaTiO_{3})_{m}/(BiFeO_{3})_{n} enable suppression of CR during CT, thus realizing a unique band diagram for spatially orthogonal CS and CT. Remarkably, (BaTiO_{3})_{m}/(BiFeO_{3})_{n} can maintain a high photocurrent and large band gap simultaneously. Our results provide a fascinating illumination for designing artificial heterostructures toward ideal CS and CT in optoelectronic applications.
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Affiliation(s)
- Sa Zhang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jianfeng Wang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Shizheng Wen
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Ming Jiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Haiyan Xiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiang Ding
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ning Wang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Menglu Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaotao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Sean Li
- School of Materials, University of New South Wales, Sydney 2052, New South Wales Australia
| | - ChiYung Yam
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing, 100193, China
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Liang Qiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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12
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Chen S, Yuan S, Hou Z, Tang Y, Zhang J, Wang T, Li K, Zhao W, Liu X, Chen L, Martin LW, Chen Z. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000857. [PMID: 32815214 DOI: 10.1002/adma.202000857] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 04/17/2020] [Indexed: 06/11/2023]
Abstract
Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
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Affiliation(s)
- Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Jinping Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tao Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Weiwei Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xingjun Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
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13
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Lau B, Kedem O. Electron ratchets: State of the field and future challenges. J Chem Phys 2020; 152:200901. [DOI: 10.1063/5.0009561] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Bryan Lau
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
| | - Ofer Kedem
- Department of Chemistry, Marquette University, Milwaukee, Wisconsin 53233, USA
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14
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Investigation of Local Conduction Mechanisms in Ca and Ti-Doped BiFeO 3 Using Scanning Probe Microscopy Approach. NANOMATERIALS 2020; 10:nano10050940. [PMID: 32422891 PMCID: PMC7279369 DOI: 10.3390/nano10050940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Revised: 05/08/2020] [Accepted: 05/12/2020] [Indexed: 11/26/2022]
Abstract
In this work we demonstrate the role of grain boundaries and domain walls in the local transport properties of n- and p-doped bismuth ferrites, including the influence of these singularities on the space charge imbalance of the energy band structure. This is mainly due to the charge accumulation at domain walls, which is recognized as the main mechanism responsible for the electrical conductivity in polar thin films and single crystals, while there is an obvious gap in the understanding of the precise mechanism of conductivity in ferroelectric ceramics. The conductivity of the Bi0.95Ca0.05Fe1−xTixO3−δ (x = 0, 0.05, 0.1; δ = (0.05 − x)/2) samples was studied using a scanning probe microscopy approach at the nanoscale level as a function of bias voltage and chemical composition. The obtained results reveal a distinct correlation between electrical properties and the type of charged defects when the anion-deficient (x = 0) compound exhibits a three order of magnitude increase in conductivity as compared with the charge-balanced (x = 0.05) and cation-deficient (x = 0.1) samples, which is well described within the band diagram representation. The data provide an approach to control the transport properties of multiferroic bismuth ferrites through aliovalent chemical substitution.
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