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Shi Y, Wang W, Zhou Q, Xia Q, Hua D, Huang Z, Chai L, Wang H, Wang P. A Molecular Dynamics Study on the Defect Formation and Mechanical Behavior of Molybdenum Disulfide under Irradiation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:29453-29465. [PMID: 38803999 DOI: 10.1021/acsami.4c05553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Due to its appealing characteristics, molybdenum disulfide (MoS2) presents a promising avenue for the exploration of lubrication protection materials in high-energy irradiation scenarios. Herein, we present a comprehensive investigation into the defect behavior of multilayer MoS2 under argon (Ar) atom irradiation leveraging molecular dynamics simulations. We have demonstrated the energy shifts and structural evolution in MoS2 upon irradiation, including the emergence of Frenkel defects and intricate defect clusters. The structural damage exhibits an initial increase followed by a subsequent decrease as the incident kinetic energy increases, ultimately peaking at 2.5 keV. Moreover, we investigated the effect of postannealing on defect recovery and conducted the uniaxial tensile and interlayer shearing simulation in order to provide valuable insights for the defect evolution and its impact on mechanical and tribological properties. Furthermore, we have proposed the optimal annealing temperature. The current study reveals the atomic mechanisms underlying irradiation-induced damage on the structural integrity and mechanical performance of MoS2, thereby providing crucial guidance for its vital application in nuclear reactors and aerospace industries.
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Affiliation(s)
- Yeran Shi
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, P. R. China
| | - Wan Wang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, P. R. China
| | - Qing Zhou
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, P. R. China
- Research & Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen, Guangdong 518063, P. R. China
| | - Qiaosheng Xia
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, P. R. China
| | - Dongpeng Hua
- Research & Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen, Guangdong 518063, P. R. China
| | - Zhiyuan Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, P. R. China
| | - Liqiang Chai
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, Gansu 730000, P. R. China
| | - Haifeng Wang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, P. R. China
| | - Peng Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, Gansu 730000, P. R. China
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2
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Xiao P, El Sachat A, Angel EC, Ng RC, Nikoulis G, Kioseoglou J, Termentzidis K, Sotomayor Torres CM, Sledzinska M. MoS 2 phononic crystals for advanced thermal management. SCIENCE ADVANCES 2024; 10:eadm8825. [PMID: 38552010 PMCID: PMC10980264 DOI: 10.1126/sciadv.adm8825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Accepted: 02/23/2024] [Indexed: 04/01/2024]
Abstract
Effective thermal management of electronic devices encounters substantial challenges owing to the notable power densities involved. Here, we propose layered MoS2 phononic crystals (PnCs) that can effectively reduce thermal conductivity (κ) with relatively small disruption of electrical conductivity (σ), offering a potential thermal management solution for nanoelectronics. These layered PnCs exhibit remarkable efficiency in reducing κ, surpassing that of Si and SiC PnCs with similar periodicity by ~100-fold. Specifically, in suspended MoS2 PnCs, we measure an exceptionally low κ down to 0.1 watts per meter kelvin, below the amorphous limit while preserving the crystalline structure. These findings are supported by molecular dynamics simulations that account for the film thickness, porosity, and temperature. We demonstrate the approach efficiency by fabricating suspended heat-routing structures that effectively confine and guide heat flow in prespecified directions. This study underpins the immense potential of layered materials as directional heat spreaders, thermal insulators, and active components for thermoelectric devices.
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Affiliation(s)
- Peng Xiao
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Departamento de Física, Universidad Autónoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Alexandros El Sachat
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- National Center for Scientific Research “Demokritos,” 15310 Athens, Greece
| | - Emigdio Chávez Angel
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Ryan C. Ng
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Giorgos Nikoulis
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Joseph Kioseoglou
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
- Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki, Greece
| | | | - Clivia M. Sotomayor Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- ICREA, Passeig Lluis Companys 23, 08010 Barcelona, Spain
| | - Marianna Sledzinska
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
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Wu J, Li S, Wang X, Huang Y, Huang Y, Chen H, Chen J, She J, Deng S. Plasma Treatment for Achieving Oxygen Substitution in Layered MoS 2 and the Room-Temperature Mid-Infrared (10 μm) Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58556-58565. [PMID: 38054246 DOI: 10.1021/acsami.3c11962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Highly sensitive photodetectors in the mid-infrared (MIR, 3-15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS2 for room-temperature MIR (10 μm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70-130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 107 Jones are obtained under MIR light (10 μm) illumination with an average power density of 114.6 mW/cm2. The photoresponse is attributed to the introduction of electronic states in the band gap of MoS2 through oxygen substitution. A graphene/plasma-treated MoS2/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 109 Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS2/graphene device is further demonstrated in single-detector MIR (10 μm) scanning imaging. This work offers a facile approach to constructing integrated MoS2-based MIR photodetectors.
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Affiliation(s)
- Jiahao Wu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Shasha Li
- School of Integrated Circuits, Sun Yat-Sen University, Shenzhen 518107, People's Republic of China
| | - Ximiao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yuan Huang
- School of Microelectronics Science and Technology, Sun Yat-Sen University, Zhuhai 519082, People's Republic of China
| | - Yifeng Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Juncong She
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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4
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Wu X, Luo X, Cheng H, Yang R, Chen X. Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials. NANOSCALE 2023; 15:8925-8947. [PMID: 37102719 DOI: 10.1039/d3nr01366a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Two-dimensional (2D) materials are receiving significant attention for both fundamental research and industrial applications due to their unparalleled properties and wide application potential. In this case, the controllable modulation of their structures and properties is essential for the realization and further expansion of their applications. Accordingly, ion beam irradiation techniques, with large scope to adjust parameters, high manufacturing resolution, and a series of advanced equipment being developed, have been demonstrated to have obvious advantages in manipulating the structure and performance of 2D materials. In recent years, many research efforts have been devoted to uncovering the underlying mechanism and control rules regarding ion irradiation induced phenomena in 2D materials, aiming at fulfilling their application potential as soon as possible. Herein, we review the research progress in the interaction between energetic ions and 2D materials based on the energy transfer model, type of ion source, structural modulation, performance modification of 2D materials, and then their application status, aiming to provide useful information for researchers in this field and stimulating more research advances.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xinchun Luo
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Hailong Cheng
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
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Zeng H, Zhang TC, Bao HG, Zhao J, Ding DZ. Influences of point defects on electron transport of two-dimensional gep semiconductor device. NANOTECHNOLOGY 2023; 34:185204. [PMID: 36724503 DOI: 10.1088/1361-6528/acb7fa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
The quantum transport properties of defective two-dimensional (2D) GeP semiconductor nanodevice consisting of typical point defects, such as antisite defect, substitutional defect, and Schottky defect, have been studied by using density functional theory combined with non-equilibrium Green's function calculation. The antisite defect has indistinctive influences on electron transport. However, both substitutional and Schottky defect have introduced promising defect state at the Fermi level, indicating the possibility of improvement on the carrier transport. Our quantitative quantum transport calculations ofI-Vbbehavior have revealed that the electrical characters are enhanced. Moreover, the P atom vacancy could induce significant negative differential resistance phenomenon, and the physical mechanism is unveiled by detailed analysis. The transfer characteristic properties could be prominently improved by substitutional defect and vacancy defect. Most importantly, we have proposed a computational design of GeP-based electronic device with improved electrical performance by introducing vacancy defect. Our findings could be helpful to the practical application of novel 2D GeP semiconductor nanodevice in future.
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Affiliation(s)
- Hui Zeng
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Tian-Cheng Zhang
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Hua-Guang Bao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Da-Zhi Ding
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
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6
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de Freitas N, Florindo BR, Freitas VMS, Piazzetta MHDO, Ospina CA, Bettini J, Strauss M, Leite ER, Gobbi AL, Lima RS, Santhiago M. Fast and efficient electrochemical thinning of ultra-large supported and free-standing MoS 2 layers on gold surfaces. NANOSCALE 2022; 14:6811-6821. [PMID: 35388391 DOI: 10.1039/d2nr00491g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Molybdenum disulfide (MoS2) is a very promising layered material for electrical, optical, and electrochemical applications because of its unique and outstanding properties. To unlock its full potential, among different preparation routes, electrochemistry has gain interest due to its simple, fast, scalable and simple instrumentation. However, obtaining large-area monolayer MoS2 that will enable the fabrication of novel electronic and electrochemical devices is still challenging. In this work, we reported a simple and fast electrochemical thinning process that results in ultra-large MoS2 down to monolayer on Au surfaces. The high affinity of MoS2 by Au surfaces enables the removal of bulk layers while preserving the first layer attached to the electrode. With a proper choice of the applied potential, more than 90% of the bulk regions can be removed from large-area MoS2 crystals, as confirmed by atomic force microscopy, photoluminescence, and Raman spectroscopy. We further address a set of contributions that are helpful to elucidate the features of MoS2, namely, the hyphenation of electrochemistry and optical microscopy for real-time observation of the thinning process that was revealed to occur from the edges to the center of the flake, an image treatment to estimate the thinning area and thinning rate, and the preparation of free-standing MoS2 layers by electrochemically thinning bulk flakes on microhole-structured Ni/Au meshes.
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Affiliation(s)
- Nicolli de Freitas
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Bianca R Florindo
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Vitória M S Freitas
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Maria H de O Piazzetta
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Carlos A Ospina
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Jefferson Bettini
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Mathias Strauss
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- Federal University of ABC, Santo André, São Paulo 09210-580, Brazil
| | - Edson R Leite
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- São Carlos Institute of Chemistry, University of São Paulo, São Carlos, São Paulo 09210-580, Brazil
| | - Angelo L Gobbi
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Renato S Lima
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- Federal University of ABC, Santo André, São Paulo 09210-580, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo 13083-970, Brazil
- São Carlos Institute of Chemistry, University of São Paulo, São Carlos, São Paulo 09210-580, Brazil
| | - Murilo Santhiago
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- Federal University of ABC, Santo André, São Paulo 09210-580, Brazil
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7
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Wu X, Zhu X, Lei B. Impact of ion beam irradiation on two-dimensional MoS 2: a molecular dynamics simulation study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:055402. [PMID: 34673551 DOI: 10.1088/1361-648x/ac31f9] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials such as MoS2have extraordinary properties and significant application potential in electronics, optoelectronics, energy storage, bioengineering, etc. To realize the numerous application potential, it is needed to modulate the structure and properties of these 2D materials, for which ion beam irradiation has obvious advantages. This research adopted classical molecular dynamics simulations to study the sputtering of atoms in 2D MoS2, defect formation and the control rule under Ar ion beam irradiation, considering the influence of ion irradiation parameters (i.e., ion beam energy, ion dose), layer number of 2D MoS2, substrate. Furthermore, the uniaxial mechanical performance of the ion-irradiated nanostructures was investigated for actual applications loading with mechanical stress/strain. This research could provide important theoretical support for fabricating high-performance 2D MoS2-based nanodevices by ion beam irradiation method.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, People's Republic of China
| | - Xiaobao Zhu
- School of Software, Nanchang Hangkong University, Nanchang, Jiangxi 330063, People's Republic of China
| | - Bing Lei
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, People's Republic of China
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8
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Wu X, Zhu X. Molecular dynamics simulations of ion beam irradiation on graphene/MoS 2 heterostructure. Sci Rep 2021; 11:21113. [PMID: 34702934 PMCID: PMC8548316 DOI: 10.1038/s41598-021-00582-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 10/11/2021] [Indexed: 11/16/2022] Open
Abstract
The interaction between ion irradiation and two-dimensional (2D) heterostructures is important for the performance modulation and application realization, while few studies have been reported. This paper investigates the influence of Ar ion irradiation on graphene/MoS2 heterostructure by using molecular dynamics (MD) simulations. The generation of defects is studied at first by considering the influence factors (i.e., irradiation energy, dose, stacking order, and substrate). Then uniaxial tensile test simulations are conducted to uncover the evolution of the mechanical performance of graphene/MoS2 heterostructure after being irradiated by ions. At last, the control rule of interlayer distance in graphene/MoS2 heterostructure by ion irradiation is illustrated for the actual applications. This study could provide important guidance for future application in tuning the performance of graphene/MoS2 heterostructure-based devices by ion beam irradiation.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-Sen University, Zhuhai, 519082, Guangdong, China.
| | - Xiaobao Zhu
- School of Software, Nanchang Hangkong University, Nanchang, 330063, Jiangxi, China.
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9
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Vacancy defect influence on nanofluid flow and absorbed thermal energy in a nanochannel affected by Universal Force Field via composed approach of embedded atom model/molecular dynamics method. J Mol Liq 2021. [DOI: 10.1016/j.molliq.2021.115927] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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10
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Gupta S, Periasamy P, Narayanan B. Defect dynamics in two-dimensional black phosphorus under argon ion irradiation. NANOSCALE 2021; 13:8575-8590. [PMID: 33912891 DOI: 10.1039/d1nr00567g] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Fundamental understanding of the atomic-scale mechanisms underlying production, accumulation, and temporal evolution of defects in phosphorene during noble-gas ion irradiation is crucial to design efficient defect engineering routes to fabricate next-generation materials for energy technologies. Here, we employed classical molecular dynamics (CMD) simulations using a reactive force field to unravel the effect of defect dynamics on the structural changes in a monolayer of phosphorene induced by argon-ion irradiation, and its subsequent relaxation during post-radiation annealing treatment. Analysis of our CMD trajectories using unsupervised machine learning methods showed that radiation fluence strongly influences the types of defect that form, their dynamics, and their relaxation mechanisms during subsequent annealing. Low ion fluences yielded a largely crystalline sheet featuring isolated small voids (up to 2 nm), Stone-Wales defects, and mono-/di-vacancies; while large nanopores (∼10 nm) can form beyond a critical fluence of ∼1014 ions per cm2. During post-radiation annealing, we found two distinct relaxation mechanisms, depending on the fluence level. The isolated small voids (1-2 nm) formed at low ion-fluences heal via local re-arrangement of rings, which is facilitated by a cooperative mechanism involving a series of atomic motions that include thermal rippling, bond formation, bond rotation, angle bending and dihedral twisting. On the other hand, damaged structures obtained at high fluences exhibit pronounced coalescence of nanopores mediated by 3D networks of P-centered tetrahedra. These findings provide new perspectives to use ion beams to precisely control the concentration and distribution of specific defect types in phosphorene for emerging applications in electronics, batteries, sensing, and neuromorphic computing.
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Affiliation(s)
- Saransh Gupta
- Department of Mechanical Engineering, University of Louisville, 332 Eastern Parkway, Louisville, KY 40292, USA.
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Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation. NANOMATERIALS 2021; 11:nano11051214. [PMID: 34064369 PMCID: PMC8147816 DOI: 10.3390/nano11051214] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Revised: 04/27/2021] [Accepted: 04/28/2021] [Indexed: 11/16/2022]
Abstract
Controlled production of defects in hexagonal boron nitride (h-BN) through ion irradiation has recently been demonstrated to be an effective tool for adding new functionalities to this material, such as single-photon generation, and for developing optical quantum applications. Using analytical potential molecular dynamics, we study the mechanisms of vacancy creation in single- and multi-layer h-BN under low- and high-fluence ion irradiation. Our results quantify the densities of defects produced by noble gas ions in a wide range of ion energies and elucidate the types and distribution of defects in the target. The simulation data can directly be used to guide the experiment aimed at the creation of defects of particular types in h-BN targets for single-photon emission, spin-selective optical transitions and other applications by using beams of energetic ions.
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12
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Lin Y, Torsi R, Geohegan DB, Robinson JA, Xiao K. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004249. [PMID: 33977064 PMCID: PMC8097379 DOI: 10.1002/advs.202004249] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Revised: 12/06/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.
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Affiliation(s)
- Yu‐Chuan Lin
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Riccardo Torsi
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - David B. Geohegan
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Joshua A. Robinson
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Two‐Dimensional Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Kai Xiao
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
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13
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Su S, Xue J. Facile Fabrication of Subnanopores in Graphene under Ion Irradiation: Molecular Dynamics Simulations. ACS APPLIED MATERIALS & INTERFACES 2021; 13:12366-12374. [PMID: 33683091 DOI: 10.1021/acsami.0c22288] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) nanoporous membranes have attracted great interest in water desalination, energy conversion, electrode, and gas separation. The performances of these membranes are mainly determined by the nanopores, and only with satisfactory subnanometer pores can applications such as high-precision ion separation be realized. Therefore, to efficiently create subnanopores in 2D materials is of great importance. Here, using molecular dynamics simulations, we demonstrate that the direct irradiation of energetic ion is capable of introducing subnanopores in monolayer graphene. By changing the energy of the incident Au ion, the averaged pore diameter can be adjusted from 4.2 to 5.6 Å, and pore diameter distributions are narrow. In the formation processes of the subnanopores, the cascade collisions caused by the primary knock-on atom (PKA) predominates, and pores can only be created in ion impact positions close to the PKA, especially for the incident ion with high energy. Our results show the promise of ion irradiation as a facile method to fabricate subnanopores in 2D materials. As hydrated ions, gases, and small organic molecules have diameters of several angstroms, close to the pore sizes, the created nanoporous membranes can be used to separate those matter, which is conducive to accelerating related applications.
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Affiliation(s)
- Shihao Su
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Jianming Xue
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
- CAPT and HEDPS, College of Engineering, Peking University, Beijing 100871, P. R. China
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