Achieving Low VOC-deficit Characteristics in Cu2ZnSn(S,Se)4 Solar Cells through Improved Carrier Separation

Fostering Charge Carrier Transport and Absorber Growth Properties in CZTSSe Thin Films with an ALD-SnO2 Capping Layer

The present study demonstrates that precursor passivation is an effective approach for improving the crystallization process and controlling the detrimental defect density in high-efficiency Cu2ZnSn(S,Se)4 (CZTSSe) thin films. It is achieved by applying the atomic layer deposition (ALD) of the tin oxide (ALD-SnO2) capping layer onto the precursor (Cu-Zn-Sn) thin films. The ALD-SnO2 capping layer was observed to facilitate the homogeneous growth of crystalline grains and mitigate defects prior to sulfo-selenization in CZTSSe thin films. Particularly, the CuZn and SnZn defects and deep defects associated with Sn were effectively mitigated due to the reduction of Sn2+ and the increase in Sn4+ levels in the kesterite CZTSSe film after introducing ALD-SnO2 on the precursor films. Subsequently, devices integrating the ALD-SnO2 layer exhibited significantly reduced recombination and efficient charge transport at the heterojunction interface and within the bulk CZTSSe absorber bulk properties. Finally, the CZTSSe device showed improved power conversion efficiency (PCE) from 8.46% to 10.1%. The incorporation of ALD-SnO2 revealed reduced defect sites, grain boundaries, and surface roughness, improving the performance. This study offers a systematic examination of the correlation between the incorporation of the ALD-SnO2 layer and the improved PCE of CZTSSe thin film solar cells (TFSCs), in addition to innovative approaches for improving absorber quality and defect control to advance the performance of kesterite CZTSSe devices.

Pd(II)/Pd(IV) redox shuttle to suppress vacancy defects at grain boundaries for efficient kesterite solar cells

Charge loss at grain boundaries of kesterite Cu2ZnSn(S, Se)4 polycrystalline absorbers is an important cause limiting the performance of this emerging thin-film solar cell. Herein, we report a Pd element assisted reaction strategy to suppress atomic vacancy defects in GB regions. The Pd, on one hand in the form of PdSex compounds, can heterogeneously cover the GBs of the absorber film, suppressing Sn and Se volatilization loss and the formation of their vacancy defects (i.e. VSn and VSe), and on the other hand, in the form of Pd(II)/Pd(IV) redox shuttle, can assist the capture and exchange of Se atoms, thus contributing to eliminating the already-existing VSe defects within GBs. These collective effects have effectively reduced charge recombination loss and enhanced p-type characteristics of the kesterite absorber. As a result, high-performance kesterite solar cells with a total-area efficiency of 14.5% (certified at 14.3%) have been achieved.

Facile Approach for Metallic Precursor Engineering for Efficient Kesterite Thin-Film Solar Cells

Kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are a promising candidate for low-cost, clean energy production owing to their environmental friendliness and the earth-abundant nature of their constituents. However, the advancement of kesterite TFSCs has been impeded by abundant defects and poor microstructure, limiting their performance potential. In this study, we present efficient Ag-alloyed CZTSSe TFSCs enabled by a facile metallic precursor engineering approach. The positioning of the Ag nanolayer in the metallic stacked precursor proves crucial in expediting the formation of Cu-Sn metal alloys during the alloying process. Specifically, Ag-included metallic precursors promote the growth of larger grains and a denser microstructure in CZTSSe thin films compared to those without Ag. Moreover, the improved uniformity of Ag, facilitated by the evaporation deposition technique, significantly suppresses the formation of detrimental defects and related defect clusters. This suppression effectively reduces nonradiative recombination, resulting in enhanced performance in kesterite TFSCs. This study not only introduces a metallic precursor engineering strategy for efficient kesterite-based TFSCs but also accelerates the development of microstructure evolution from metallic stacked precursors to metal chalcogenide compounds.

Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping

Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.

Analytical Modeling and Optimization of Cu2ZnSn(S,Se)4 Solar Cells with the Use of Quantum Wells under the Radiative Limit

In this work, we present a theoretical study on the use of Cu₂ZnSn(S,Se)₄ quantum wells in Cu₂ZnSnS₄ solar cells to enhance device efficiency. The role of different well thickness, number, and S/(S + Se) composition values is evaluated. The physical mechanisms governing the optoelectronic parameters are analyzed. The behavior of solar cells based on Cu₂ZnSn(S,Se)₄ without quantum wells is also considered for comparison. Cu₂ZnSn(S,Se)₄ quantum wells with a thickness lower than 50 nm present the formation of discretized eigenstates which play a fundamental role in absorption and recombination processes. Results show that well thickness plays a more important role than well number. We found that the use of wells with thicknesses higher than 20 nm allow for better efficiencies than those obtained for a device without nanostructures. A record efficiency of 37.5% is achieved when 36 wells with a width of 50 nm are used, considering an S/(S + Se) well compositional ratio of 0.25.

Effect of Zn/Sn Ratio on Perovskite Solar Cell Performance Applying Off-Stoichiometric Cu2ZnSnS4/Carbon Hole-Collecting Electrodes

Low-cost inorganic hole-transporting materials (HTMs) accompanied by a printable carbon electrode is an efficient approach to address the limitation of material cost of perovskite solar cells (PSCs) and get this technology closer to commercialization. The present work is focused on optimizing the Zn/Sn ratio of Cu₂ZnSnS₄/carbon hole collectors in n-i-p structured PSCs, where CuInS₂/carbon is applied as the reference hole collector. This composition regulation is a solution to address the challenge of composition-related defects of the Cu₂ZnSnS₄ (CZTS) material. The Zn/Sn ratio was tuned by the initial proportion of the zinc precursor during the nanoparticle (NP) synthesis using a heating-up procedure. It was found that the enhancement of the Zn/Sn ratio leads to a gradual increase of the optical band gap. More importantly, an increased density of B-type defect clusters [2Zn_Cu + Zn_Sn] is confirmed using Raman results. Additionally, results from the cyclic voltammetry measurement show that by increasing the Zn/Sn value, the highest occupied molecular orbital (HOMO) of HTM is pulled down. These data match the upward trend of photovoltage. CZTS HTM with an optimal Zn/Sn ratio of 1.5 has a compatible energy level, along with the features of uniform and smooth coverage. The best efficiency of about 14.86% was obtained for optimal CZTS/carbon-based PSCs, which reaches from 14.86 to 15.49% after 25 days of aging.

Back Shallow Ge Gradient Enhanced Carrier Separation for CZTSe Solar Cells through a Coselenization Process

Given the prominent success of the Ga gradient in CuIn_1-xGa_xSe₂ (CIGSe) solar cells, Ge gradient implementation is a promising way to boost Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells. However, Ge-graded CZTSSe solar cells only possess a low efficiency of 9.2%, far from that of Ge-incorporated CZTSSe without a gradient (12.3%). Herein, we demonstrated a shallow Ge gradient CZTSe solar cell with an improved efficiency over 10%. The Ge gradient was achieved through a GeSe₂-Se coselenization process, where GeSe₂ acts as a low-temperature fluxing agent to assist crystallization and induce Ge transport toward the back interface. The relieved band tails and improved junction quality, leading to a better carrier separation, were found to take a primary responsibility for device improvement. These results highlight a remarkable breakthrough for Ge-graded CZTSe solar cells and offer a promising way to develop Ge-involved solar cells.