Insights into Microscopic Crystal Growth Dynamics of CH3NH3PbI3 under a Laser Deposition Process Revealed by In Situ X-ray Diffraction

Vapor-Solid Reaction Techniques for the Growth of Organic-Inorganic Hybrid Perovskite Thin Films

Perovskite solar cells are considered next-generation photovoltaic technology due to their remarkable advancements in power conversion efficiency. To transition this technology from the lab to industry, the method for preparing perovskite thin films must support mass production. Currently, the solution-based slot-die technique is the primary method for depositing large-area perovskite thin films. However, solution-based methods are not standard in the semiconductor industry, where vapor-based techniques are favored for their high controllability and reproducibility. The cost of vacuum facilities and the complexity of these processes hinder many researchers, resulting in vapor-based technique development lagging behind solution-based methods in device efficiency and scale. This review focuses on the progress in growing perovskite thin films using vapor-solid reaction techniques, which are believed to offer the most direct path to commercialization. By examining the crystallization and growth mechanisms of perovskite films and discussing specific optimization strategies for vapor-solid reactions, insights into future developments and challenges in fabricating perovskite solar cells using fully vacuum processes are concluded.

Evolution of Defects, Morphology, and Strain during FAMAPbI3 Perovskite Vacuum Deposition: Insights from In Situ Photoluminescence and X-ray Scattering

At present, the power conversion efficiency of single-junction perovskite-based solar cells reaches over 26%. The further efficiency increase of perovskite-based optoelectronic devices is limited mainly by defects, causing the nonradiative recombination of charge carriers. To improve efficiency and ensure reproducible fabrication of high-quality layers, it is crucial to understand the perovskite nucleation and growth mechanism along with associated process control to reduce the defect density. In this study, we investigate the growth kinetics of a promising narrow bandgap perovskite, formamidinium methylammonium lead iodide (FAMAPbI3), for high-performance single-junction solar cells. The temporal evolution of structural and optoelectronic properties during FAMAPbI3 vacuum codeposition was inspected in real time by grazing-incidence wide-angle X-ray scattering and photoluminescence. Such a combination of analytical techniques unravels the evolution of intrinsic defect density and layer morphology correlated with lattice strain from the early stages of the perovskite deposition.

Reaction Dynamics of C(NH2)3SnI3 Formation from Vacuum-Deposited C(NH2)3I and SnI2 Bilayer Thin Films Investigated by In Situ Infrared Multiple-Angle Incidence-Resolved Spectroscopy

Understanding the formation process of organic-inorganic halide perovskite (OIHP) thin films is important for the fabrication of high-quality thin films, which, in turn, are crucial for achieving high-performance devices. To address this challenge, we developed an in situ system of infrared multiple-angle incidence-resolved spectroscopy (IR-MAIRS) combined with a vacuum deposition system. "Orientation-free" isotropic spectra constructed from IR-MAIRS spectra enable us to perform quantitative analysis of the formation process of C(NH2)3SnI3 (GASnI3) thin films from unreacted C(NH2)3I (guanidine hydroiodide (GAI))/SnI2 bilayer structures predeposited in a vacuum. The analysis of the dependence of the GASnI3 formation rate on the reaction temperature using the Avrami model has revealed that a diffusion-controlled reaction process of GAI and SnI2 governs the formation kinetics. The present study points to the usefulness of in situ IR-MAIRS analysis in understanding the growth mechanisms of vacuum-deposited OIHP thin films and hence the potential to accelerate the development of vacuum processes for the fabrication of high-quality OIHP thin films.

Extracting information from X-ray diffraction patterns containing Laue oscillations

The presence of Laue oscillations in a film grown on a solid surface is broadly taken as indicating a high quality, crystallographically aligned film of the targeted compound. In this paper we briefly review the origins of both Laue oscillations and Kiessig fringes and show how they can be used together to determine if extra thickness exists above or below the coherently diffracting domains. The differences between experimental and “ideal” films are discussed and the effect of structural features (roughness, different thickness coherently diffracting domains and thickness in addition to the coherently diffracting domains) are illustrated with experimental and simulated data for metal and mixed-metal chalcogenide films of titanium, bismuth, vanadium/iron, and bismuth/molybdenum. Examples are given showing how quantitative information can be extracted from experimental diffraction patterns.