Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots

Tailoring the Interfacial Composition of Heterostructure InP Quantum Dots for Efficient Electroluminescent Devices

The formation of core-shell quantum dots (QDs) with type-I band alignment results in surface passivation, ensuring the efficient confinement of excitons for light-emitting applications. In such cases, the atomic composition at the core-shell heterojunction significantly affects the optical, and electrical properties of the QDs. However, for InP cores, shell materials are limited to compositions consisting of II-VI group elements. The restricted selection of shell materials leads to an interfacial misfit, resulting in a charge imbalance at the core-shell heterojunction. In this study, the effect of interfacial stoichiometry is investigated on the optical, and electrical properties of InP core-shell QDs. Direct Se injection strategy is employed during the synthesis of the InP core to regulate the interfacial chemical composition, resulting in the formation of an InZnSe alloy on the core surface. This InZnSe layer reduces the misfit between the InP core, and ZnSe shell, leading to a remarkable photoluminescence quantum yield of 95% with a narrow emission bandwidth of 34 nm. The InZnSe interlayer significantly influences the electroluminescence (EL) processes, increasing the charge injection efficiency, and mitigating charge imbalance. A green-emitting EL device is demonstrated with a maximum luminance of 26370 cd m-2, and a peak current efficiency of 31.5 cd A-1.

Quantum-Dot-Electrolyte Light-Emitting Diodes for Displays

Electroluminescence (EL) is essential for modern technologies, such as displays, lighting, and optical communications. To date, some kinds of artificial EL devices have been developed, including organic light-emitting diodes (OLEDs), quantum-dot (QD) LEDs, and light-emitting electrochemical cells. However, issues (e.g., inefficient charge injection, exciton quenching) limit the further EL performance. Here, another promising kind of EL device is reported, which is called QD-electrolyte LED (QE-LED). The key feature of QE-LED is that an ionic liquid is doped into QDs as the electrolyte emitter of multi-layer device architectures. Both theoretical and experimental analyses reveal that an enhanced interface electric field from the in situ formed electrical double layer is leveraged to improve the charge injection and transport. With the introduction of insulating polymers into QD-electrolyte emitters, red QE-LED achieves an external quantum efficiency of 20.5% and a lifetime (T95) over 3.74 × 105 h at the display-related luminance of 100 cd m-2, indicating that the QE-LED is among the best EL devices. Furthermore, an active-matrix QE-LED display is demonstrated with superior stability that overtakes the commercial benchmark. These results offer an avenue to discover unexplored EL devices and provide potential pathways to enhance charge dynamics for EL devices.

Highly efficient and eco-friendly green quantum dot light-emitting diodes through interfacial potential grading

As next-generation display technologies, eco-friendly colloidal quantum dot light-emitting diodes have drawn great attention due to their excellent luminescence properties, along with their rapid development. However, practical applications of eco-friendly quantum dot light-emitting device remain challenging, primarily due to the inferior performance of green device, which still lag behind their red and blue counterparts. Herein, we present efficient green device based on interfacial potential-graded ZnSeTe quantum dots. Our findings show that this potential-graded structure alleviates interfacial lattice mismatch and strain, reducing structural deformation and misfit defects. The smoothed interfacial potential suppresses the nonradiative recombination processes, particularly Auger recombination revealed by excitation-intensity dependent ultrafast transient absorption kinetics. Consequently, the interfacial potential-graded quantum dots demonstrate highly efficient green quantum dot light-emitting diodes, with a peak external quantum efficiency of 21.7% at 520 nm and a corresponding current efficiency of 75.7 cd A-1.

Exploring Single Atom Substitution In Phenanthro[9,10-d]Imidazole -Based D-π-A Architectures with Fluorene and its Heteroanalogs for Non-Volatile Resistive WORM Memory Device Applications

A series of D-π-A compounds, with fluorene and its heteroanalogs (carbazole, dibenzofuran, dibenzothiophene) as the donor units and phenanthroimidazole as the acceptor, were designed and synthesized for non-volatile memory device applications. The effect of single-atom substitution on memory behavior was examined through optical, electrochemical, and computational studies. The photophysical studies confirm a significant intramolecular charge transfer from the donor to the acceptor unit, and the electrochemical analysis shows an irreversible anodic peak (0.99-1.21 V) with an optimal band gap ranging from 2.80 to 2.88 eV. All the compounds exhibited non-volatile binary WORM memory behaviour with an ON/OFF current ratio of 105 and 103. The devices also showed excellent stability over 100 cycles and maintained a retention time of 4000 s. Notably, the compound with carbazole substitution displayed a lower threshold voltage and a higher ON/OFF current ratio of 105. Density functional theory calculations confirmed that the combined effects of charge transfer and charge trapping mechanisms are crucial to the resistive switching mechanisms observed. This work highlights the potential of single atom substitution in D-π-A systems, providing valuable insights for designing high-performance data storage devices.

Effects of Polymer Matrix and Atmospheric Conditions on Photophysical Properties of a Cesium Lead Bromide (CsPbBr3) Perovskite Quantum Dot

Understanding the environment-dependent stability and photoluminescence (PL) properties of advanced perovskite materials remains a challenge with conflicting views. Herein, we investigated the influence of the host matrix (poly(methyl methacrylate) (PMMA) and polystyrene (PS)) and atmospheric conditions (ambient and N2) on the PL properties of a CsPbBr3 perovskite quantum dot (PQD) using single-particle spectroscopy. Despite the same PL blinking mechanism, the PL properties of the PQD were considerably affected by the environmental conditions. The charge trapping and detrapping rates of the PQD were lower and higher, respectively, under ambient atmosphere than under N2 owing to surface defect passivation by oxygen. The frequency and rate of PQD decomposition were higher in the PMMA matrix than in the PS matrix under an ambient atmosphere. PS achieved superior PQD encapsulation owing to its higher affinity toward hydrophobic surface ligands because of its aromatic rings, thereby protecting the PQD surface from moisture and thus inhibiting decomposition.

Reinforcing Photogenerated Carrier Extraction of Environment-Friendly InP/ZnSeS Quantum Dots for High-Performing Photoelectrochemical Photodetection and Solar Energy Conversion

Colloidal InP/ZnSeS-based quantum dots (QDs) are considered promising building blocks for light-emitting devices due to their environmental friendliness, high quantum yield (QY), and narrow emission. However, the intrinsic type-I band structure severely hinders potential photoelectrochemical (PEC) applications requiring efficient photoexcited carrier separation and transfer. In this study, the optoelectronic properties of InP/ZnSeS QDs are tailored by introducing Al dopants in the ZnSeS layer, which concurrently passivate the surface defects and act as shallow donor states for suppressed non-radiative recombination and improved charge extraction efficiency. Consequently, as-fabricated InP/ZnSeS:Al QDs-based PEC-type photodetector exhibited a high detectivity up to 1011 Jones and a remarkable responsivity of 0.66 A W-1 at 600 nm even under self-powered condition (0V bias). In addition, as-prepared InP/ZnSeS:Al QDs-based photoanode can be alternatively used for PEC hydrogen generation, showing an H2 production rate of 73.7 µmol cm-2 h-1 under 1 sun illumination (AM 1.5G, 100 mW cm-2). The results offer a prospective strategy for optimizing eco-friendly QDs for high-performance multifunctional light detection/conversion devices.

Evidence of carrier diffusion between emission states in CdSe/ZnS core-shell quantum dots: a comprehensive investigation combining fluorescence lifetime correlation spectroscopy (FLCS) and single dot photoluminescence studies

Investigation of carrier dynamics in CdSe/ZnS core-shell quantum dots (QDs) is performed using fluorescence-lifetime-correlation-spectroscopy (FLCS) and single-dot PL blinking studies. The origin of an emitted photon from a QD in an FLCS study is assigned to either an exciton state or trap state based on its excited state lifetime (τfl). Subsequently, two intrastate autocorrelation functions (ACFs) representing the exciton and trap states and one cross-correlation function (CCF) coupling these two states are constructed. Interestingly, the timescales of carrier diffusion (τR) show striking similarities across all three correlation functions, which further correlate with τR of the conventional FCS. However, ACFs notably deviate from the CCF in their μs progression patterns, with the latter showing growth, whereas the former ones display decay. This implies inter-state carrier diffusions leading to the QD blinking. Further study of single particle PL blinking on a surface-immobilized QD indicates shallow trap states near the band edge cause the blinking at low excitation power, while trion recombination becomes an additional contributing factor at higher pump power. Overall, the results highlight not only an excellent correlation between these two techniques but also the potential of our approach for achieving an accurate and comprehensive understanding of carrier dynamics in CdSe/ZnS QDs.

Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications

Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.

Facet Dependent Photoluminescence Blinking from Perovskite Nanocrystals

Photoluminescence (PL) blinking of nanoparticles, while detrimental to their imaging applications, may benefit next-generation displays if the blinking is precisely controlled by reversible electron/hole injections from an external source. Considerable efforts are made to create well-characterized charged excitons within nanoparticles through electrochemical charging, which has led to enhanced control over PL-blinking in numerous instances. Manipulating the photocharging/discharging rates in nanoparticles by surface engineering can represent a straightforward method for regulating their blinking behaviors, an area largely unexplored for perovskite nanocrystals (PNCs). This work shows facet engineering leading to different morphologies of PNCs characterized by distinct blinking patterns. For instance, examining the PL intensity trajectories of single PNCs, representing the instantaneous photon count rate over time, reveals that the OFF-state population significantly increases as the number of facets increases from six to twenty-six. This study suggests that extra-faceted PNCs, owing to their polar facets and expanded surface area, render them more susceptible to photocharging, which results in larger OFF-state populations. Furthermore, the fluorescence correlation spectroscopy (FCS) study unveils that the augmented propensity for photocharging in extra-faceted PNCs can also originate from their greater tendency to form complexes with neighboring molecules.

Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications

Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.

Crystallographic and Photophysical Analysis on Facet-Controlled Defect-Free Blue-Emitting Quantum Dots

The burgeoning demand for commercializing self-luminescing quantum dot (QD) light-emitting diodes (LEDs) has stimulated extensive research into environmentally friendly and efficient QD materials. Hydrofluoric acid (HF) additive improves photoluminescence (PL) properties of blue-emitting ZnSeTe QDs, ultimately reaching a remarkable quantum yield (QY) of 97% with an ultranarrow peak width of 14 nm after sufficient HF addition. The improvement in optical properties of the QDs is accompanied by a morphology change of the particles, forming cubic-shaped defect-free ZnSeTe QDs characterized by a zinc blende (ZB) crystal structure. This treatment improves the QD-emitting properties by facilitating facet-specific growth, selectively exposing stabilized (100) facets, and reducing the lattice disorders. The facet-specific growth process gives rise to defect-free monodispersed cubic dots that exhibit remarkably narrow and homogeneous PL spectra. Meticulous time-resolved spectroscopic studies allow an understanding of the correlation between ZnSeTe QDs' particle shape and performance following HF addition. These investigations shed light on the intricacies of the growth mechanism and the factors influencing the PL efficiency of the resulting QDs. The findings significantly contribute to understanding the role of HF treatment in tailoring the optical properties of ZnSeTe QDs, thereby bringing it closer to the realization of highly efficient and bright QD-LEDs for various practical applications.

Multiphoton emission of single CdZnSe/ZnS quantum dots coupled with plasmonic Au nanoparticles

The fluorescence blinking and low multiphoton emission of quantum dots (QDs) have limited their application in lasing, light-emitting diodes, and so on. Coupling of single QDs to plasmonic nanostructures is an effective approach to control the photon properties. Here plasmon-exciton systems including Au nanoparticles and CdZnSe/ZnS QDs were investigated at the single particle level. With the modulation of the local electromagnetic field, the fluorescence intensity of single QDs is increased, accompanied by a significant suppression in blinking behavior, and the lifetime is shortened from 15 ns to 2 ns. Moreover, the second-order photon intensity correlation at zero lag time g2(0) of coupled single QDs is larger than 0.5, indicating an increased probability of multiphoton emission. The enhancement factors of radiative and nonradiative decay rates of QDs coupled with Au nanoparticles are calculated. The sharply increased radiative decay rate can be comparable to the nonradiative Auger rate, leading to dominated multiple exciton radiative recombination with PL intensity enhancement, suppressed blinking, lifetime shortening, and multiphoton emission. The results of the exciton decay dynamics and emission properties of single QDs in this work are helpful in exploring the mechanism of plasmon-exciton interaction and optoelectronic application of single QDs.

Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes

Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.

Suppressed Auger recombination and enhanced emission of InP/ZnSe/ZnS quantum dots through inner shell manipulation

Understanding the influence of the inner shell on fluorescence blinking and exciton dynamics is essential to promote the optical performances of InP-based quantum dots (QDs). Here, the fluorescence blinking, exciton dynamics, second-order correlation function g2(τ), and ultrafast carrier dynamics of InP/ZnSe/ZnS QDs regulated by the inner ZnSe shell thickness varying from 2 to 7 monolayers (MLs) were systematically investigated. With an inner ZnSe shell thickness of 5 MLs, the photoluminescence quantum yield (PL QY) can reach 98% due to the suppressed blinking and increased probability of multiphoton emission. The exciton dynamics of InP/ZnSe/ZnS QDs with different inner shells indicates that two decay components of neural excitons and charged trions are competitive to affect the photon emission behavior. The probability density distributions of the ON and OFF state duration in the blinking traces demonstrate an effective manipulation of the inner ZnSe shell in the non-radiative processes via defect passivation. Accordingly, the radiative recombination dominates the exciton deactivation and the non-radiative Auger recombination rate is remarkably reduced, leading to a QY close to unity and a high PL stability for InP/ZnSe/ZnS QDs with 5 MLs of the ZnSe shell. These results provide insights into the photophysical mechanism of InP-based QDs and are significant for developing novel semiconductor PL core/shell QDs.

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

Optoelectronic devices have various applications in medical equipment, sensors, and communication systems. Photodetectors, which convert light into electrical signals, have gained much attention from many research teams. This study describes a low-cost photodetector based on CuO nanoparticles and ZnO nanorods operating in a wide range of light wavelengths (395, 464, 532, and 640 nm). Particularly, under 395 nm excitation, the heterostructure device exhibits high responsivity, photoconductive gain, detectivity, and sensitivity with maximum values of 1.38 A·W-1, 4.33, 2.58 × 1011 Jones, and 1934.5% at a bias of 2 V, respectively. The sensing mechanism of the p-n heterojunction of CuO/ZnO is also explored. Overall, this study indicates that the heterostructure of CuO nanoparticles and ZnO nanorods obtained via a simple and cost-effective synthesis process has great potential for optoelectronic applications.

Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution

Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.

Deep Blue and Highly Emissive ZnS-Passivated InP QDs: Facile Synthesis, Characterization, and Deciphering of Their Ultrafast-to-Slow Photodynamics

InP-based quantum dots (QDs) are an environment-friendly alternative to their heavy metal-ion-based counterparts. Herein we report a simple procedure for synthesizing blue emissive InP QDs using oleic acid and oleylamine as surface ligands, yielding ultrasmall QDs with average sizes of 1.74 and 1.81 nm, respectively. Consecutive thin coating with ZnS increased the size of these QDs to 4.11 and 4.15 nm, respectively, alongside a significant enhancement of their emission intensities centered at ∼410 nm and ∼430 nm, respectively. Pure phase synthesis of these deep-blue emissive QDs is confirmed by powder X-ray diffraction (PXRD), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Armed with femtosecond to millisecond time-resolved spectroscopic techniques, we decipher the energy pathways, reflecting the effect of successive ZnS passivation on the charge carrier (electrons and holes) dynamics in the deep-blue emissive InP, InP/ZnS, and InP/ZnS/ZnS QDs. Successive coating of the InP QDs increases the intraband relaxation times from 200 to 700 fs and the lifetime of the hot electrons from 2 to 8 ps. The lifetime of the cold holes also increase from 1 to 4 ps, and remarkably, the Auger recombination escalates from 15 to 165 ps. The coating also drastically decreases the quenching by the molecular oxygen of the trapped charge carriers at the surfaces of the QDs. Our results provide clues to push further the emission of InP QDs into more energetically spectral regions and to increase the fluorescence quantum yield, targeting the construction of efficient UV-emissive light-emitting devices (LEDs).

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people's health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.

Ultrafast dynamics and ultrasensitive single particle spectroscopy of optically robust core/alloy shell semiconductor quantum dots

A "one-pot one-step" synthesis method of Core/Alloy Shell (CAS) quantum dots (QDs) offers the scope of large scale synthesis in a less time consuming, more economical, highly reproducible and high-throughput manner in comparison to "multi-pot multi-step" synthesis for Core/Shell (CS) QDs. Rapid initial nucleation, and smooth & uniform shell growth lead to the formation of a compositionally-gradient alloyed hetero-structure with very significantly reduced interfacial trap density in CAS QDs. Thus, interfacial strain gets reduced in a much smoother manner leading to enhanced confinement for the photo-generated charge carriers in CAS QDs. Convincing proof of alloy-shelling for a CAS QD has been provided from HRTEM images at the single particle level. The band gap could be tuned as a function of composition, temperature, reactivity difference of precursors, etc. and a high PLQY and improved photochemical stability could be achieved for a small sized CAS QD. From the ultrafast exciton dynamics in CdSe and InP CAS QDs, it has been shown that (a) the hot exciton thermalization/relaxation happens in <500 fs, (b) hot electron trapping dynamics occurs within a ∼1 ps time scale, (c) band edge exciton trapping occurs within a 10-25 ps timescale and (d) for CdSe CAS QDs the hot hole gets trapped in about 35 ps. From fast PL decay dynamics, it has been shown that the amplitude of the intermediate time constant can be correlated with the PLQY. A model has been provided to understand these ultrafast to fast exciton dynamical processes. At the ultrasensitive single particle level, unlike CS QDs, CdSe CAS QDs have been shown to exhibit (a) constancy of PL_max (i.e. no bluing) and (b) constancy of PL intensity (i.e. no bleaching) of the single CAS QDs for continuous irradiation for one hour under an air atmosphere. Thus, CAS QDs hold the promise of being a superior optical probe in comparison to CS QDs both at the ensemble and at the single particle level, leading to enhanced flexibility of the CAS QDs towards designing and developing next generation application devices.