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Namvari M, Chakrabarti BK. Electrophoretic deposition of MXenes and their composites: Toward a scalable approach. Adv Colloid Interface Sci 2024; 331:103208. [PMID: 38852471 DOI: 10.1016/j.cis.2024.103208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 06/01/2024] [Accepted: 06/02/2024] [Indexed: 06/11/2024]
Abstract
Over the past decade, MXenes, a novel class of advanced 2D nanomaterials, have manifested as a prominent electrode material with diverse applications. Their unique layered structures, negative zeta potential, charge carrier mobility, mechanical properties, adjustable bandgap, hydrophilicity, metallic nature, and surface chemistry collectively contribute to the abundance of active redox sites on the surface and a reduction in the ion diffusion pathway. Despite such promising attributes of MXene, challenges like aggregation and restacking reduce the accessibility of active surface sites for electrolyte ions. Amongst approaches such as surface functionalization, addition of spacers, or facilitating pore formation, the electrophoretic deposition (EPD) of MXene on substrates has commenced to gain attention aiming to mitigate these issues. More importantly, it offers large-scale film fabrication in a short time without the necessity of using a charge-inducing agent. This review compiles recent advances in the use of EPD for preparing MXene-based electrodes and discusses the effect of EPD parameters on the relevant device performance. Recognition is given to understanding the relation of MXene colloidal composition in aqueous (and in some cases, non-aqueous) dispersions, deposition times, and other relevant parameters on respective device performances. In conclusion, the potential avenues offered by MXenes for future research on electrode materials are emphasized.
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Affiliation(s)
- Mina Namvari
- Sabanci University Nanotechnology Research and Application Center (SUNUM), Sabanci University, Istanbul 34956, Turkey.
| | - Barun Kumar Chakrabarti
- Sabanci University Nanotechnology Research and Application Center (SUNUM), Sabanci University, Istanbul 34956, Turkey
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Prabhakar Vattikuti SV, Shim J, Rosaiah P, Mauger A, Julien CM. Recent Advances and Strategies in MXene-Based Electrodes for Supercapacitors: Applications, Challenges and Future Prospects. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:62. [PMID: 38202517 PMCID: PMC10780966 DOI: 10.3390/nano14010062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Revised: 12/18/2023] [Accepted: 12/22/2023] [Indexed: 01/12/2024]
Abstract
With the growing demand for technologies to sustain high energy consumption, supercapacitors are gaining prominence as efficient energy storage solutions beyond conventional batteries. MXene-based electrodes have gained recognition as a promising material for supercapacitor applications because of their superior electrical conductivity, extensive surface area, and chemical stability. This review provides a comprehensive analysis of the recent progress and strategies in the development of MXene-based electrodes for supercapacitors. It covers various synthesis methods, characterization techniques, and performance parameters of these electrodes. The review also highlights the current challenges and limitations, including scalability and stability issues, and suggests potential solutions. The future outlooks and directions for further research in this field are also discussed, including the creation of new synthesis methods and the exploration of novel applications. The aim of the review is to offer a current and up-to-date understanding of the state-of-the-art in MXene-based electrodes for supercapacitors and to stimulate further research in the field.
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Affiliation(s)
| | - Jaesool Shim
- School of Mechanical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea; (S.V.P.V.); (J.S.)
| | - Pitcheri Rosaiah
- Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences (SIMATS), Thandalam, Chennai 602105, India;
| | - Alain Mauger
- Institut de Minéralogie, de Physique des Matériaux et de Cosmologie (IMPMC), Sorbonne Université, UMR-CNRS 7590, 4 Place Jussieu, 75005 Paris, France;
| | - Christian M. Julien
- Institut de Minéralogie, de Physique des Matériaux et de Cosmologie (IMPMC), Sorbonne Université, UMR-CNRS 7590, 4 Place Jussieu, 75005 Paris, France;
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Huang J, Yang S, Tang X, Yang L, Chen W, Chen Z, Li X, Zeng Z, Tang Z, Gui X. Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiO x /Ti 3 C 2 T x Film for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303737. [PMID: 37339620 DOI: 10.1002/adma.202303737] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 06/08/2023] [Indexed: 06/22/2023]
Abstract
A high-density neuromorphic computing memristor array based on 2D materials paves the way for next-generation information-processing components and in-memory computing systems. However, the traditional 2D-materials-based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiOx /Ti3 C2 Tx film is fabricated by a convenient and energy-efficient solution-processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiOx /Ti3 C2 Tx memristor shows low device-to-device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (104 bending cycles) of the TiOx /Ti3 C2 Tx memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiOx /Ti3 C2 Tx artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment.
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Affiliation(s)
- Junhua Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Shaodian Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xin Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Leilei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
- Department of Physics, Guangxi Minzu University, Nanning, 530006, China
| | - Wenjun Chen
- School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China
| | - Zibo Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xinming Li
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China
| | - Zhiping Zeng
- School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, China
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
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