F-doping-Enhanced Carrier Transport in the SnO2/Perovskite Interface for High-Performance Perovskite Solar Cells

Improving Thermal Stability of High-Efficiency Methylammonium-Free Perovskite Solar Cells via Chloride Additive Engineering

Tin dioxide (SnO2), in perovskite solar cells (PSCs), stands out as the material most suited to the electron transport layer (ETL), yielding advantages with regard to ease of preparation, high mobility, and favorable energy level alignment. Nonetheless, there is a chance that energy losses from defects in the SnO2 and interface will result in a reduction in the Voc. Consequently, optimizing the interfaces within solar cell devices is a key to augmenting both the efficiency and the stability of PSCs. Herein this present study, we introduced butylammonium chloride (BACl) into the SnO2 ETL. The resulting optimized SnO2 film mitigated interface defect density, thereby improving charge extraction. The robust bonding capability of negatively charged Cl- ions facilitated their binding with noncoordinated Sn4+ ions, effectively passivating defects associated with oxygen vacancies and enhancing charge transport within the SnO2 ETL. Concurrently, doped BA+ and Cl- diffused into the perovskite lattice, fostering perovskite grain growth and reducing the defects in perovskite. In comparison to the control device, the Voc saw a 70 mV increase, achieving a champion efficiency of 22.86%. Additionally, following 1000 h of ambient storage, the unencapsulated device based on SnO2 preburied with BACl retained around 90% of its initial photovoltaic conversion efficiency.

SnSe2 Quantum Dots and Chlorhexidine Acetate Suppress Synergistically Non-radiative Recombination Loss for High Efficiency and Stability Perovskite Solar Cells

Non-radiative recombination losses limit the property of perovskite solar cells (PSCs). Here, a synergistic strategy of SnSe2QDs doping into SnO2 and chlorhexidine acetate (CA) coating on the surface of perovskite is proposed. The introduction of 2D SnSe2QDs reduces the oxygen vacancy defects and increases the carrier mobility of SnO2. The optimized SnO2 as a buried interface obviously improves the crystallization quality of perovskite. The CA containing abundant active sites of ─NH2/─NH─, ─C═N, CO, ─Cl groups passivate the defects on the surface and grain boundary of perovskite. The alkyl chain of CA also improves the hydrophobicity of perovskite. Moreover, the synergism of SnSe2QDs and CA releases the residual stress and regulates the energy level arrangement at the top and bottom interface of perovskite. Benefiting from these advantages, the bulk and interface non-radiative recombination loss is greatly suppressed and thereby increases the carrier transport and extraction in devices. As a result, the best power conversion efficiency (PCE) of 23.41% for rigid PSCs and the best PCE of 21.84% for flexible PSCs are reached. The rigid PSC maintains 89% of initial efficiency after storing nitrogen for 3100 h. The flexible PSCs retain 87% of the initial PCE after 5000 bending cycles at a bending radius of 5 mm.

High efficiency and stability of perovskite solar cells prepared by alkali metal interfacial modification

Perovskite solar cells (PSCs) have attracted much attention at home and abroad due to their excellent photoelectric properties. Defects in the electron transport layer (ETL) and ETL/perovskite interface greatly affect the power conversion efficiency (PCE) and stability of PSCs. In the paper, the surface of tin dioxide (SnO2) ETL was modified by an alkali metal salt (NaBr, KBr, and RbBr) solution to optimize electron transport and passivate SnO2/perovskite. The results show that the photovoltaic performance of the PSCs is significantly improved after interfacial modification, especially the KBr-modified PSC has the highest PCE, which is 7.8% higher than that of the unmodified device, and the open-circuit voltage, short-circuit current density and fill factor are all greatly improved. This improvement is attributed to the fact that interfacial modification reduces the trap density of the SnO2 films, increases the mobility of the SnO2 films film, effectively passivates defects, and significantly inhibits the recombination at the SnO2/perovskite interface. This method aims to use simple and low-cost inorganic materials for effective interface modification.

Improvement of Photovoltaic Performance of Perovskite Solar Cells by Synergistic Modulation of SnO2 and Perovskite via Interfacial Modification

In the past decade, perovskite solar cell (PSC) photoelectric conversion efficiency has advanced significantly, and tin dioxide (SnO2) has been extensively used as the electron transport layer (ETL). Due to its high electron mobility, strong chemical stability, energy level matching with perovskite, and easy low-temperature fabrication, SnO2 is one of the most effective ETL materials. However, the SnO2 material as an ETL has its limitations. For example, SnO2 films prepared by low-temperature spin-coating contain a large number of oxygen vacancies, resulting in energy loss and high open-circuit voltage (VOC) loss. In addition, the crystal quality of perovskites is closely related to the substrate, and the disordered crystal orientation will lead to ion migration, resulting in a large number of uncoordinated Pb2+ defects. Therefore, interface optimization is essential to improve the efficiency and stability of the PSC. In this work, 2-(5-chloro-2-benzotriazolyl)-6-tert-butyl-p-cresol (CBTBC) was introduced for ETL modification. On the one hand, the hydroxyl group of CBTBC forms a Lewis mixture with the Sn atom, which reduces the oxygen vacancy defect and prevents nonradiative recombination. On the other hand, the SnO2/CBTBC interface can effectively improve the crystal orientation of perovskite by influencing the crystallization kinetics of perovskite, and the nitrogen element in CBTBC can effectively passivate the uncoordinated Pb2+ defects at the SnO2/perovskite interface. Finally, the prevailing PCE of PSC (1.68 eV) modified by CBTBC was 20.34% (VOC = 1.214 V, JSC = 20.49 mA/cm2, FF = 82.49%).

Hexylammonium Acetate-Regulated Buried Interface for Efficient and Stable Perovskite Solar Cells

Due to current issues of energy-level mismatch and low transport efficiency in commonly used electron transport layers (ETLs), such as TiO2 and SnO2, finding a more effective method to passivate the ETL and perovskite interface has become an urgent matter. In this work, we integrated a new material, the ionic liquid (IL) hexylammonium acetate (HAAc), into the SnO2/perovskite interface to improve performance via the improvement of perovskite quality formed by the two-step method. The IL anions fill oxygen vacancy defects in SnO2, while the IL cations interact chemically with Pb2+ within the perovskite structure, reducing defects and optimizing the morphology of the perovskite film such that the energy levels of the ETL and perovskite become better matched. Consequently, the decrease in non-radiative recombination promotes enhanced electron transport efficiency. Utilizing HAAc, we successfully regulated the morphology and defect states of the perovskite layer, resulting in devices surpassing 24% efficiency. This research breakthrough not only introduces a novel material but also propels the utilization of ILs in enhancing the performance of perovskite photovoltaic systems using two-step synthesis.

Unraveling the Mechanism of Alkali Metal Fluoride Post-Treatment of SnO2 for Efficient Planar Perovskite Solar Cells

The facile synthesis and beneficial properties of tin oxide have driven the development of efficient planar perovskite solar cells (PSCs). To increase the PSC performance, alkali salts are used to treat the SnO2 surface to minimize the defect states. However, the underlying mechanism of alkali cations' role in the PSCs needs further exploration. Herein the effect of alkali fluoride salts (KF, RbF, and CsF) on the properties of SnO2 and PSC performance is investigated. The results show different alkali have significant roles depending on their nature. Larger cations Cs+ preferably locate at the SnO2 film surface to passivate surface defects and enhance conductivity, while smaller cations like Rb+ or K+ cations tend to diffuse into the perovskite layer to reduce trap density of the material. The former effect leads to enhanced fill factor while the latter effect increases the open circuit voltage of the device. It is then demonstrated that a dual cation post-treatment of the SnO2 layer with RbF and CsF achieves PSC with a significantly higher power conversion efficiency (PCE) of 21.66% compared to pristine PSC with a PCE of 19.71%. This highlights the significance of defect engineering of SnO2 using selective multiple alkali treatment to improve PSC performance.

Thermodynamic, electronic, and optical properties of ultra-wide bandgap zirconium-doped tin dioxide from a DFT perspective

The effects of zirconium doping on the thermodynamic, electronic, and optical properties of tin dioxide are investigated by using density functional theory calculations combined with the cluster expansion method. In the whole composition range, the formation enthalpies of all structures are positive, indicating that SnO2-ZrO2 is an immiscible system and the ZrSnO2 alloy has a tendency of phase separation at low temperature. The x-T phase diagram of ZrSnO2 ternary alloy shows that the critical temperature is 979 K, which means that when the growth temperature of ZrSnO2 crystal is higher than the critical temperature, it is possible to realize the full-component solid solution. The bandgaps of ZrxSn1-xO2 alloys (0 ≤ x ≤ 1) are direct and increase as the Zr composition increases. Zr doping can tune the bandgap of SnO2 from the ultraviolet-B region to the deep ultraviolet region, and has a strong optical response to deep ultraviolet light. The projected density of states and band offsets clearly reveal the reason for the increase of bandgap, which provides useful information to design relevant optoelectronic devices such as quantum wells and solar-blind deep ultraviolet photodetectors.

Effects of the Electrical Properties of SnO2 and C60 on the Carrier Transport Characteristics of p-i-n-Structured Semitransparent Perovskite Solar Cells

Recently, metal halide perovskite-based top cells have shown significant potential for use in inexpensive and high-performance tandem solar cells. In state-of-the-art p-i-n perovskite/Si tandem devices, atomic-layer-deposited SnO2 has been widely used as a buffer layer in the top cells because it enables conformal, pinhole-free, and highly transparent buffer layer formation. In this work, the effects of various electrical properties of SnO2 and C60 layers on the carrier transport characteristics and the performance of the final devices were investigated using a numerical simulation method, which was established based on real experimental data to increase the validity of the model. It was found that the band alignment at the SnO2/C60 interface does, indeed, have a significant impact on the electron transport. In addition, as a general design rule, it was suggested that at first, the conduction band offset (CBO) between C60 and SnO2 should be chosen so as not to be too negative. However, even in a case in which this CBO condition is not met, we would still have the means to improve the electron transport characteristics by increasing the doping density of at least one of the two layers of C60 and/or SnO2, which would enhance the built-in potential across the perovskite layer and the electron extraction at the C60/SnO2 interface.

Synergistic Modification for Efficient Perovskite Solar Cells with Small Voltage Loss

The power conversion efficiency (PCE) of perovskite solar cells has improved quickly in the past few years, but the PCE is still much lower than the theoretical limit. The relatively high energy loss (Eloss) is one of the critical factors limiting the PCE. To resolve the above issues, a synergistic modification strategy was used herein to minimize Eloss. RbCl and potassium polyacrylate (K-PAM) were used to modify the SnO2 layer. Additionally, Pb(Ac)2 was introduced into PbI2 to further improve the film quality. The synergistic modification strategy reduced the defects in SnO2 and perovskite and improved the energy-level alignment, enabling significantly reduced Eloss and enhanced photovoltaic performance. The best PCE of 24.07% was achieved, which was much higher than that of the control device (20.86%). The Eloss was only 0.349 eV for the target device. Good stability was achieved for the cells made using modified SnO2 and perovskite layers.

Recent Advances of Doped SnO2 as Electron Transport Layer for High-Performance Perovskite Solar Cells

Perovskite solar cells (PSCs) have garnered considerable attention over the past decade owing to their low cost and proven high power conversion efficiency of over 25%. In the planar heterojunction PSC structure, tin oxide was utilized as a substitute material for the TiO2 electron transport layer (ETL) owing to its similar physical properties and high mobility, which is suitable for electron mining. Nevertheless, the defects and morphology significantly changed the performance of SnO2 according to the different deposition techniques, resulting in the poor performance of PSCs. In this review, we provide a comprehensive insight into the factors that specifically influence the ETL in PSC. The properties of the SnO2 materials are briefly introduced. In particular, the general operating principles, as well as the suitability level of doping in SnO2, are elucidated along with the details of the obtained results. Subsequently, the potential for doping is evaluated from the obtained results to achieve better results in PSCs. This review aims to provide a systematic and comprehensive understanding of the effects of different types of doping on the performance of ETL SnO2 and potentially instigate further development of PSCs with an extension to SnO2-based PSCs.

Isolating the Oxygen Adsorption Defects on Sputtered Tin Oxide for Efficient Perovskite Solar Cells

Tin oxide (SnO₂) is the most commonly used electron transport material for perovskite solar cells (PSCs). Various techniques have been applied to deposit tin dioxide, including spin-coating, chemical bath deposition, and magnetron sputtering. Among them, magnetron sputtering is one of the most mature industrial deposition techniques. However, PSCs based on magnetron-sputtered tin oxide (sp-SnO₂) have a lower open-circuit voltage (V_oc) and power conversion efficiency (PCE) than those prepared by the mainstream solution method. This is mainly due to the oxygen-related defects at the sp-SnO₂/perovskite interface, and traditional passivation strategies usually have little effect on them. Herein, we successfully isolate the oxygen adsorption (O_ads) defects located on the surface of sp-SnO₂ from the perovskite layer using a PCBM double-electron transport layer. This isolation strategy effectively suppresses the Shockley-Read-Hall recombination at the sp-SnO₂/perovskite interface, which results in an increase in the V_oc from 0.93 to 1.15 V and an increase in PCE from 16.66 to 21.65%. To our knowledge, this is the highest PCE achieved using a magnetron-sputtered charge transport layer to date. The unencapsulated devices maintain 92% of their initial PCE after storage in air with a relative humidity of 30-50% after 750 h. We further use the solar cell capacitance simulator (1D-SCAPS) to confirm the effectiveness of the isolation strategy. This work highlights the application prospect of magnetron sputtering in the field of perovskite solar cells and provides a simple yet effective way to tackle the interfacial defect issue.

Defect Passivation Scheme toward High-Performance Halide Perovskite Solar Cells

Organic-inorganic halide perovskite solar cells (PSCs) have attracted much attention in recent years due to their simple manufacturing process, low cost, and high efficiency. So far, all efficient organic-inorganic halide PSCs are mainly made of polycrystalline perovskite films. There are transmission barriers and high-density defects on the surface, interface, and grain boundary of the films. Among them, the deep-level traps caused by specific charged defects are the main non-radiative recombination centers, which is the most important factor in limiting the photoelectric conversion efficiency of PSCs devices to the Shockley-Queisser (S-Q) theoretical efficiency limit. Therefore, it is imperative to select appropriate passivation materials and passivation strategies to effectively eliminate defects in perovskite films to improve their photovoltaic performance and stability. There are various passivation strategies for different components of PSCs, including interface engineering, additive engineering, antisolvent engineering, dopant engineering, etc. In this review, we summarize a large number of defect passivation work to illustrate the latest progress of different types of passivators in regulating the morphology, grain boundary, grain size, charge recombination, and defect density of states of perovskite films. In addition, we discuss the inherent defects of key materials in carrier transporting layers and the corresponding passivation strategies to further optimize PSCs components. Finally, some perspectives on the opportunities and challenges of PSCs in future development are highlighted.

Perylene Monoimide Phosphorus Salt Interfacial Modified Crystallization for Highly Efficient and Stable Perovskite Solar Cells

Reducing the interfacial defects of perovskite films is key to improving the performance of perovskite solar cells (PSCs). In this study, two kinds of perylene monoimide (PMI) derivative phosphonium bromide salts were designed and used as a multifunctional interface-modified layer in PSCs. These two molecules are inserted between SnO₂ and perovskite to produce a bidirectional passivation effect. The interaction with SnO₂ reduces the oxygen vacancy on the surface of SnO₂ and tunes the energy level of the electron transport layer, making more matches with the perovskite layer. The modified layer can promote the growth of perovskite crystals and reduce the interfacial defects of the perovskite film. Furthermore, the power conversion efficiency (PCE) of PSCs increased from 19.49 to 22.85%, and the open-circuit voltage (V_OC) increased from 1.06 to 1.14 V. At the same time, the PCE of the SnO₂/PMI-TPP-based device remained 88% of the initial PCE after 240 h of continuous illumination. In addition, these two PMI derivatives with a quasi-planar structure can improve the flexibility of flexible PSCs. This study provided a new strategy for the interfacial modification of PSCs and a new insight into the application of flexible PSCs.

Fabrication of UV-Stable Perovskite Solar Cells with Compact Fe2O3 Electron Transport Layer by FeCl3 Solution and Fe3O4 Nanoparticles

Even though Fe₂O₃ is reported as the electron-transporting layer (ETL) in perovskite solar cells (PSCs), its fabrication and defects limit its performance. Herein, we report a Fe₂O₃ ETL prepared from FeCl₃ solution with a dopant Fe₃O₄ nanoparticle modification. It is found that the mixed solution can reduce the defects and enhance the performance of Fe₂O₃ ETL, contributing to improved electron transfer and suppressed charge recombination. Consequently, the best efficiency is improved by more than 118% for the optimized device. The stability efficiency of the Fe₂O₃-ETL-based device is nearly 200% higher than that of the TiO₂-ETL-based device after 7 days measurement under a 300 W Xe lamp. This work provides a facile method to fabricate environmentally friendly, high-quality Fe₂O₃ ETL for perovskite photovoltaic devices and provides a guide for defect passivation research.