Bulk Heterostructure BA2PbI4/MAPbI3 Perovskites for Suppressed Ion Migration To Achieve Sensitive X-ray Detection Performance

Green Fabrication of Sulfonium-Containing Bismuth Materials for High-Sensitivity X-Ray Detection

Organic-inorganic hybrid materials based on lead and bismuth have recently been proposed as novel X- and gamma-ray detectors for medical imaging, non-destructive testing, and security, due to their high atomic numbers and facile preparation compared to traditional materials like amorphous selenium and Cd(Zn)Te. However, challenges related to device operation, excessively high dark currents, and long-term stability have delayed commercialization. Here, two novel semiconductors incorporating stable sulfonium cations are presented, [(CH3CH2)3S]6Bi8I30 and [(CH3CH2)3S]AgBiI5, synthesized via solvent-free ball milling and fabricated into dense polycrystalline pellets using cold isostatic compression, two techniques that can easily be upscaled, for X-ray detection application. The fabricated detectors exhibit exceptional sensitivities (14 100-15 190 µC Gyair -1 cm-2) and low detection limits (90 nGyair s-1 for [(CH3CH2)3S]6Bi8I30 and 78 nGyair s-1 for [(CH3CH2)3S]AgBiI5), far surpassing current commercial detectors. Notably, they maintain performance after 9 months of ambient storage. The findings highlight [(CH3CH2)3S]6Bi8I30 and [(CH3CH2)3S]AgBiI5 as scalable, cost-effective and highly stable alternatives to traditional semiconductor materials, offering great potential as X-ray detectors in medical and security applications.

Cutting-Edge Developments in Metal Halide Perovskites Core/Shell Heterocrystals: from Photodetectors to Biomedical Applications

In recent years, the performance of metal halide perovskite (MHP)-based detectors (photon, biomedical, and X-ray detection) has significantly improved, resulting in higher carrier mobilities, longer carrier diffusion lengths, and excellent absorption coefficients. However, the widespread adoption of halide perovskites has been hindered by issues related to their stability and toxicity. Various strategies have been adopted to address these challenges, focusing on enhancing ambient stability and reducing toxicity by encapsulating MHPs within stable and robust host materials, such as silicon compounds, metal oxides, chalcogenides, and lead-free perovskites. This review focuses on recent developments in hybrid nanostructure-based detectors (photon, biomedical, and X-ray), particularly core/shell architectures, and provides a comprehensive analysis of techniques for mitigating degradation due to light and oxygen exposure, UV irradiance, and thermal effects. This review enhances the understanding of current advancements in core/shell-based detectors.

Wafer-Sized CsPbBr3/CsPbCl3 Heterojunction: Breaking the Trade-Off between Sensitivity and Dark Current for Efficient X-ray Detector

Polycrystalline lead halide perovskite finds promising use in fabricating X-ray detectors with a large lateral size, adjustable thickness, and diverse synthesis processes. However, a large dark current hinders its development for weak signal detection. Herein, we propose a multistep pressing strategy for manufacturing a CsPbBr3/CsPbCl3 heterojunction wafer for a reduced dark current X-ray detector, and the device keeps a high sensitivity value after the insertion of a barrier by heterojunction; thus, the trade-off between sensitivity and dark current can be broken. The X-ray detector with a metal-semiconductor-metal structure yields a sensitivity of 6.32 × 104 μC Gyair-1 cm-2 at a bias of 12 V, a 1/f noise of 1.02 × 10-13 A/Hz-1/2, and a detection limit of 66.58 nGy s-1. These performance parameters are considerably better than those of a similar X-ray detector based on the single-structure wafer. The improved device performance of the heterostructure X-ray detector is ascribed to the suppressed carrier recombination, enhanced carrier transportation of the heterojunction, and strong X-ray attenuation of the CsPbCl3 layer. The pixel array device is further used in imaging applications. Hence, this study provides an efficient strategy for fabricating heterostructure polycrystalline lead halide perovskite wafers for use in high-performance wafer-based X-ray detectors.

Investigation of the Effect of the Passivation on the Charge Transfer from MAPbI3 to Electron Transport Layer Using a Heterodyne Transient Grating Spectroscopic Technique

We fabricated MAPbI3 perovskite thin films with ZnO on a glass substrate, in which a passivation layer (Phenethylammonium iodide (PEAI); p-methoxyphenethylammonium iodide (CH3O-PEAI); 2-methoxyethylammonium iodide (MEAI)) was inserted between two layers. In order to understand the effect of the insertion of each passivation material on the transfer efficiency of the photo-generated electrons from MAPbI3 to ZnO, we observed the near-field heterodyne transient grating (NF-HD-TG) responses of each film and investigated the component arising from the recombination of the trapped electrons at the ZnO surface. Based on the accelerated recombination between photo-generated holes remaining in the MAPbI3 layer and surface-trapped electrons in ZnO and the increase in the number of the trapped electrons in ZnO when either CH3O-PEAI or PEAI was applied, we successfully revealed that the charge transfer efficiency was enhanced by the insertion of the passivation materials including a benzene ring stabilizing the defect states. Particularly, it was demonstrated that CH3O-PEAI showed the highest increase in the charge transfer efficiency, which could be attributed to the high electron density in the benzene ring, resulting from the existence of the electron donating group, CH3O, and its role in the effective transition from 3D to 2D perovskite phases.

Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States

Understanding the sub-band gap luminescence in Ruddlesden-Popper 2D metal halide hybrid perovskites (2D HaPs) is essential for efficient charge injection and collection in optoelectronic devices. Still, its origins are still under debate with respect to the role of self-trapped excitons or radiative recombination via defect states. In this study, we characterized charge separation, recombination, and transport in single crystals, exfoliated layers, and polycrystalline thin films of butylammonium lead iodide (BA2PbI4), one of the most prominent 2D HaPs. We combined complementary defect- and exciton-sensitive methods such as photoluminescence (PL) spectroscopy, modulated and time-resolved surface photovoltage (SPV) spectroscopy, constant final state photoelectron yield spectroscopy (CFSYS), and constant light-induced magneto transport (CLIMAT), to demonstrate striking differences between charge separation induced by dissociation of excitons and by excitation of mobile charge carriers from defect states. Our results suggest that the broad sub-band gap emission in BA2PbI4 and other 2D HaPs is caused by radiative recombination via defect states (shallow as well as midgap states) rather than self-trapped excitons. Density functional theory (DFT) results show that common defects can readily occur and produce an energetic profile that agrees well with the experimental results. The DFT results suggest that the formation of iodine interstitials is the initial process leading to degradation, responsible for the emergence of midgap states, and that defect engineering will play a key role in enhancing the optoelectronic properties of 2D HaPs in the future.

Achieving Low-Dose Rate X-Ray Imaging Based on 2D/3D-Mixed Perovskite Films

X-ray detection and imaging are widely used in medical diagnosis, product inspection, security monitoring, etc. Large-scale polycrystalline perovskite thick films possess high potential for direct X-ray imaging. However, the notorious problems of baseline drift and high detection limit caused by ions migration are still remained. Here, ion migration is reduced by incorporating 2D perovskite into 3D perovskite, thereby increasing the ion activation energy. This approach hinders ion migration within the perovskite film, consequently suppressing baseline drift and reducing the lowest detection limit(LOD) of the device. As a result, the baseline drifting declines by 20 times and the LOD reduces to 21.1 nGy s-1, while the device maintains a satisfactory sensitivity of 5.6 × 103 µC Gy-1 cm-2. This work provides a new strategy to achieve low ion migration in large-scale X-ray detectors and may provide new thoughts for the application of mixed-dimension perovskite.

Bottom-up construction of low-dimensional perovskite thick films for high-performance X-ray detection and imaging

Quasi-two-dimensional (Q-2D) perovskite exhibits exceptional photoelectric properties and demonstrates reduced ion migration compared to 3D perovskite, making it a promising material for the fabrication of highly sensitive and stable X-ray detectors. However, achieving high-quality perovskite films with sufficient thickness for efficient X-ray absorption remains challenging. Herein, we present a novel approach to regulate the growth of Q-2D perovskite crystals in a mixed atmosphere comprising methylamine (CH3NH2, MA) and ammonia (NH3), resulting in the successful fabrication of high-quality films with a thickness of hundreds of micrometers. Subsequently, we build a heterojunction X-ray detector by incorporating the perovskite layer with titanium dioxide (TiO2). The precise regulation of perovskite crystal growth and the meticulous design of the device structure synergistically enhance the resistivity and carrier transport properties of the X-ray detector, resulting in an ultrahigh sensitivity (29721.4 μC Gyair-1 cm-2) for low-dimensional perovskite X-ray detectors and a low detection limit of 20.9 nGyair s-1. We have further demonstrated a flat panel X-ray imager (FPXI) showing a high spatial resolution of 3.6 lp mm-1 and outstanding X-ray imaging capability under low X-ray doses. This work presents an effective methodology for achieving high-performance Q-2D perovskite FPXIs that holds great promise for various applications in imaging technology.

Arising 2D Perovskites for Ionizing Radiation Detection

2D perovskites have greatly improved moisture stability owing to the large organic cations embedded in the inorganic octahedral structure, which also suppresses the ions migration and reduces the dark current. The suppression of ions migration by 2D perovskites effectively suppresses excessive device noise and baseline drift and shows excellent potential in the direct X-ray detection field. In addition, 2D perovskites have gradually emerged with many unique properties, such as anisotropy, tunable bandgap, high photoluminescence quantum yield, and wide range exciton binding energy, which continuously promote the development of 2D perovskites in ionizing radiation detection. This review aims to systematically summarize the advances and progress of 2D halide perovskite semiconductor and scintillator ionizing radiation detectors, including reported alpha (α) particle, beta (β) particle, neutron, X-ray, and gamma (γ) ray detection. The unique structural features of 2D perovskites and their advantages in X-ray detection are discussed. Development directions are also proposed to overcome the limitations of 2D halide perovskite radiation detectors.

Toward Low-Voltage and High-Sensitivity Direct X-ray Detectors Based on Thick Bulk Heterojunction Organic Device

Organic semiconducting materials are promising for the fabrication of flexible ionizing radiation detectors for imaging because of their tissue equivalence, simple large-scale processing, and mass production. However, it is challenging to achieve high-sensitivity detection for organic direct detectors prepared by low-cost solution processing because of the compromise between thickness and carrier transport. In this study, high-performance organic direct X-ray detectors were fabricated by building a micrometer-thick bulk heterojunction (BHJ) using poly(3-hexylthiophene-2,5-diyl) (P3HT):(6,6)-phenyl c71 butyric acid methyl ester. A 5 μm BHJ film was fabricated by drop-casting and enhanced crystallization of P3HT using binary solvents and high-boiling-point additives to improve the charge carrier mobility. Furthermore, this organic direct X-ray detector has a sensitivity of >654.26 μC Gyair s-1 and a self-powered response. Because of the architecture of the thick active layer and the energy cascade in this diode detector, it has a very low dark current of 46.26 pA at -2 V. A fast and efficient approach was developed for fabricating thick, highly mobile organic BHJ films for high-performance direct X-ray detectors. It has great potential for application in a new generation of flexible and portable large-area flat-panel detectors.

Stereo-Hindrance Engineering of A Cation toward <110>-Oriented 2D Perovskite with Minimized Tilting and High-Performance X-Ray Detection

2D <100>-oriented Dion-Jacobson or Ruddlesden-Popper perovskites are widely recognized as promising candidates for optoelectronic applications. However, the large interlayer spacing significantly hinders the carrier transport. <110>-oriented 2D perovskites naturally exhibit reduced interlayer spacings, but the tilting of metal halide octahedra is typically serious and leads to poor charge transport. Herein, a <110>-oriented 2D perovskite EPZPbBr4 (EPZ = 1-ethylpiperazine) with minimized tilting is designed through A-site stereo-hindrance engineering. The piperazine functional group enters the space enclosed by the three [PbBr6 ]4- octahedra, pushing Pb─Br─Pb closer to a straight line (maximum Pb─Br─Pb angle ≈180°), suppressing the tilting as well as electron-phonon coupling. Meanwhile, the ethyl group is located between layers and contributes an extremely reduced effective interlayer distance (2.22 Å), further facilitating the carrier transport. As a result, EPZPbBr4 simultaneously demonstrates high µτ product (1.8 × 10-3 cm2 V-1 ) and large resistivity (2.17 × 1010 Ω cm). The assembled X-ray detector achieves low dark current of 1.02 × 10-10 A cm-2 and high sensitivity of 1240 µC Gy-1 cm-2 under the same bias voltage. The realized specific detectivity (ratio of sensitivity to noise current density, 1.23 × 108 µC Gy-1 cm-1 A-1/2 ) is the highest among all reported perovskite X-ray detectors.