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For: Fang H, Wang J, Nie F, Zhang N, Yu T, Zhao L, Shi C, Zhang P, He B, Lü W, Zheng L. Giant Electroresistance in Ferroelectric Tunnel Junctions via High-Throughput Designs: Toward High-Performance Neuromorphic Computing. ACS Appl Mater Interfaces 2024;16:1015-1024. [PMID: 38156871 DOI: 10.1021/acsami.3c13171] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Number Cited by Other Article(s)
1
Xing F, Qing F, Zhou M, Ning C, Liao W, Li X. Radio frequency switching devices based on two-dimensional materials for high-speed communication applications. NANOSCALE HORIZONS 2025. [PMID: 40331301 DOI: 10.1039/d5nh00105f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2025]
2
Wang G, Sun F, Zhou S, Zhang Y, Zhang F, Wang H, Huang J, Zheng Y. Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses. ACS APPLIED MATERIALS & INTERFACES 2024;16:12073-12084. [PMID: 38381527 DOI: 10.1021/acsami.3c18146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
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