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Nodo S, Yamane I, Suzuki M, Okabayashi J, Yokokura S, Shimada T, Nagahama T. Intrinsic Magnetic Proximity Effect at the Atomically Sharp Interface of Co xFe 3-xO 4/Pt Grown by Molecular Beam Epitaxy. ACS OMEGA 2023; 8:24875-24882. [PMID: 37483234 PMCID: PMC10357544 DOI: 10.1021/acsomega.3c00935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Accepted: 06/15/2023] [Indexed: 07/25/2023]
Abstract
CoxFe3-xO4(CFO)/Pt bilayers prepared by molecular beam epitaxy were investigated for the anomalous Hall effect and X-ray magnetic circular dichroism (XMCD). We found that the anomalous Hall effect originates from a magnetic proximity effect at the CFO/Pt interface. The XMCD signal in the Pt L-edge was obtained only for the sample deposited at 600 °C, indicating that the magnetic proximity effect is sensitive to the interface structure. Transmission electron microscopy images of the CFO/Pt interface and XMCD measurements of Co and Fe L-edges do not provide direct evidence for interfacial atomic diffusion or alloying. In summary, these results suggest that the magnetic proximity effect is robust for transport properties, such as the anomalous Hall effect, while the induced magnetic moment depends on slight differences in the interfacial structure, such as the presence or absence of interfacial oxygen ions.
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Affiliation(s)
- Shoto Nodo
- Graduate
School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Ichiro Yamane
- Graduate
School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Motohiro Suzuki
- School
of Engineering, Kwansei Gakuin University, Sanda, Hyogo 669-1330, Japan
| | - Jun Okabayashi
- Research
Center for Spectrochemistry, The University
of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Seiya Yokokura
- Graduate
School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Toshihiro Shimada
- Graduate
School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Taro Nagahama
- Graduate
School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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2
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Rajaji U, Chinnapaiyan S, Chen SM, Govindasamy M, Oliveira Filho JID, Khushaim W, Mani V. Design and Fabrication of Yttrium Ferrite Garnet-Embedded Graphitic Carbon Nitride: A Sensitive Electrocatalyst for Smartphone-Enabled Point-of-Care Pesticide (Mesotrione) Analysis in Food Samples. ACS APPLIED MATERIALS & INTERFACES 2021; 13:24865-24876. [PMID: 34009929 DOI: 10.1021/acsami.1c04597] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As the use of pesticides in agriculture is increasing at an alarming rate, food contamination by pesticide residues is becoming a huge global problem. It is essential to develop a sensitive and user-friendly sensor device to quantify trace levels of pesticide and herbicide residues in food samples. Herein, we report an electrocatalyst made up of yttrium iron garnet (Y3Fe5O12; YIG) and graphitic carbon nitride (GCN) to attain picomolar-level detection sensitivity for mesotrione (MTO), which is a widely used herbicide in agriculture. First, YIG was prepared by a hydrothermal route; then, it was loaded on GCN sheets via a calcination method. The surface structures, composition, crystallinity, and interfacial and electrocatalytic properties of the YIG and YIG/GCN were analyzed. As the YIG/GCN displayed better surface and catalytic properties than YIG, YIG/GCN was modified on a screen-printed carbon electrode to fabricate a sensor for MTO. The YIG/GCN-modified electrode displayed a detection limit of 950 pM for MTO. The method was demonstrated in (spiked) fruits and vegetables. Then, the modified electrode was integrated with a miniaturized potentiostat called KAUSTat, which can be operated wirelessly by a smartphone. A first smartphone-based portable sensor was demonstrated for MTO that is suitable for use in nonlaboratory settings.
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Affiliation(s)
- Umamaheswari Rajaji
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Chung-Hsiao East Road, Section 3, Taipei 10608, Taiwan, Republic of China
| | - Sathishkumar Chinnapaiyan
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Chung-Hsiao East Road, Section 3, Taipei 10608, Taiwan, Republic of China
| | - Shen-Ming Chen
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Chung-Hsiao East Road, Section 3, Taipei 10608, Taiwan, Republic of China
| | - Mani Govindasamy
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Chung-Hsiao East Road, Section 3, Taipei 10608, Taiwan, Republic of China
| | - José Ilton de Oliveira Filho
- Sensors Lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Walaa Khushaim
- Sensors Lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Veerappan Mani
- Sensors Lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
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Medwal R, Chaudhuri U, Vas JV, Deka A, Gupta S, Duchamp M, Asada H, Fukuma Y, Mahendiran R, Rawat RS. Magnetoimpedance of Epitaxial Y 3Fe 5O 12 (001) Thin Film in Low-Frequency Regime. ACS APPLIED MATERIALS & INTERFACES 2020; 12:41802-41809. [PMID: 32819087 DOI: 10.1021/acsami.0c13213] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The atomically flat interface of the Y3Fe5O12 (YIG) thin film and the Gd3Ga5O12 (GGG) substrate plays a vital role in obtaining the magnetization dynamics of YIG below and above the anisotropy field. Here, magnetoimpedance (MI) is used to investigate the magnetization dynamics in fully epitaxial 45 nm YIG thin films grown on the GGG (001) substrates using a copper strip coil in the MHz-GHz frequency region. The resistance (R) and reactance (X), which are components of impedance (Z), allow us to probe the absorptive and dispersive components of the dynamic permeability, whereas a conventional spectrometer only measures the field derivative of the power absorbed. The distinct excitation modes arising from the resonance in the uniform and dragged magnetization states of YIG are respectively observed above and below the anisotropy field. The magnetodynamics clearly shows the visible dichotomy between two resonant fields below and above the anisotropy field and its motion as a function of the direction of the applied magnetic field. A low value of a damping factor of ∼4.7 - 6.1 × 10-4 is estimated for uniform excitation mode with an anisotropy field of 65 ± 2 Oe. Investigation of below and above anisotropy field-dependent magnetodynamics in the low-frequency mode can be useful in designing the YIG-based resonators, oscillators, filters, and magnonic devices.
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Affiliation(s)
- Rohit Medwal
- Natural Sciences and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore
| | - Ushnish Chaudhuri
- Physics Department, National University of Singapore, Singapore 117551, 2 Science Drive 3, Republic of Singapore
| | - Joseph Vimal Vas
- Natural Sciences and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore
| | - Angshuman Deka
- Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan
| | - Surbhi Gupta
- Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan
| | - Martial Duchamp
- School of Material Science and Engineering, Facility for Analysis, Characterization, Testing and Simulation (FACTS), Nanyang Technological University, Singapore 637616Singapore
| | - Hironori Asada
- Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube 755-8611, Japan
| | - Yasuhiro Fukuma
- Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan
| | - Ramanathan Mahendiran
- Physics Department, National University of Singapore, Singapore 117551, 2 Science Drive 3, Republic of Singapore
| | - Rajdeep Singh Rawat
- Natural Sciences and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore
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4
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Pandey E, Singh BB, Sharangi P, Bedanta S. Strain engineered domain structure and their relaxation in perpendicularly magnetized Co/Pt deposited on flexible polyimide. NANO EXPRESS 2020. [DOI: 10.1088/2632-959x/ab90cb] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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5
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Guan M, Wang L, Zhao S, Zhou Z, Dong G, Su W, Min T, Ma J, Hu Z, Ren W, Ye ZG, Nan CW, Liu M. Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802902. [PMID: 30109765 DOI: 10.1002/adma.201802902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2018] [Revised: 06/22/2018] [Indexed: 06/08/2023]
Abstract
The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high-speed response, and energy efficiency, it can be used for various spintronic applications, including spin-Hall, spin-pumping, and spin-Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited "capping" platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage-induced ferromagnetic ordering, caused by uncompensated d-orbital electrons in the Pt metal layer. Confirmed by first-principle calculations, this finding paves the way for novel voltage-tunable YIG-based spintronics.
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Affiliation(s)
- Mengmeng Guan
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Lei Wang
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Shishun Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Wei Su
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Tai Min
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Jing Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
- Department of Chemistry and 4D LABS, Simon Fraser University, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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Peng B, Li Q, Liang X, Song P, Li J, He K, Fu D, Li Y, Shen C, Wang H, Wang C, Liu T, Zhang L, Lu H, Wang X, Zhao J, Xie J, Wu M, Bi L, Deng L, Loh KP. Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS 2 and Yttrium Iron Garnet. ACS NANO 2017; 11:12257-12265. [PMID: 29182851 DOI: 10.1021/acsnano.7b05743] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D TMDCs) exhibit an emerging valley pseudospin, in which spin-up (-down) electrons are distributed in a +K (-K) valley. This valley polarization gives a DOF for spintronic and valleytronic devices. Recently, magnetic exchange interactions between graphene and magnetic insulator yttrium iron garnet (YIG) have been exploited. However, the physics of 2D TMDCs with YIG have not been shown before. Here we demonstrate strong many-body effects in a heterostructure geometry comprising a MoS2 monolayer and YIG. High-order trions are directly identified by mapping absorption and photoluminescence at 12 K. The electron doping density is up to ∼1013 cm-2, resulting in a large splitting of ∼40 meV between trions and excitons. The trions exhibit a high circular polarization of ∼80% under optical pumping by circularly polarized light at ∼1.96 eV; it is confirmed experimentally that both phonon scattering and electron-hole exchange interaction contribute to the valley depolarization with temperature; importantly, a magnetoresistance (MR) behavior in the MoS2 monolayer was observed, and a giant MR ratio of ∼30% is achieved, which is 1 order of magnitude larger than the reported ratio in MoS2/CoFe2O4 heterostructures. Our experimental results confirm that the giant MR behaviors are attributed to the interfacial spin accumulation due to YIG substrates. Our work provides an insight into spin manipulation in a heterostructure of monolayer materials and magnetic substrates.
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Affiliation(s)
- Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Qi Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Xiao Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Peng Song
- Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543
| | - Jian Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Keliang He
- IBM , Malta, New York 12020, United States
| | - Deyi Fu
- Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543
| | - Yue Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Chao Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Chuangtang Wang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Tao Liu
- Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States
| | - Li Zhang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Haipeng Lu
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Xin Wang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Jianliang Xie
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Mingzhong Wu
- Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States
| | - Lei Bi
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Kian Ping Loh
- Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543
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Liang X, Deng L, Huang F, Tang T, Wang C, Zhu Y, Qin J, Zhang Y, Peng B, Bi L. The magnetic proximity effect and electrical field tunable valley degeneracy in MoS 2/EuS van der Waals heterojunctions. NANOSCALE 2017; 9:9502-9509. [PMID: 28660948 DOI: 10.1039/c7nr03317f] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report the magnetic proximity effect (MPE) and valley non-degeneracy in monolayer MoS2 and magnetic semiconductor EuS thin film heterojunctions studied by density functional theory (DFT) with the vdW-DF2 correlations. Magnetic moments are observed in MoS2 due to the MPE when forming chemical or van der Waals (vdW) adsorption states with EuS. Spin-orbit coupling (SOC) leads to observable valley non-degeneracy of MoS2 at the K (K') points in the Brillouin zone. The valley Zeeman splitting energy Ez can reach 5.1 meV and 37.3 meV for the vdW and chemical adsorption states, corresponding to a magnetic exchange field (MEF) of 22 T and 160 T respectively. By applying a gate voltage across the MoS2/EuS interface, it is found that Ez can be tuned from 1.8 meV to 8.2 meV and from 24.5 meV to 53.8 meV for vdW and chemical adsorption states respectively. The strong MPE, large and tunable valley degeneracy in 2D material and ferromagnetic semiconductor/insulator vdW heterojunctions demonstrate their promising potential for novel optoelectronic and valleytronic device applications.
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Affiliation(s)
- Xiao Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
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Granja LP, Martínez ED, Troiani H, Sanchez C, Soler Illia GJAA. Magnetic Gold Confined in Ordered Mesoporous Titania Thin Films: A Noble Approach for Magnetic Devices. ACS APPLIED MATERIALS & INTERFACES 2017; 9:965-971. [PMID: 27936570 DOI: 10.1021/acsami.6b15189] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
In the past decade, the surprising magnetic behavior of gold nanoparticles has been reported. This unexpected property is mainly attributed both to size and surface effects. Mesoporous thin films are ideal matrices for metallic nanoparticles inclusion, because of their highly accessible and tailorable pore systems that lead to completely tunable chemical environments. Exploiting these features, we synthesized Au nanoparticles within mesoporous titania thin films (film thickness of ∼150 nm and pore diameter of ∼5 nm), and we studied their magnetic properties under confinement. Here, we present the results of the magnetization as a function of temperature and magnetic field for this system, which are consistent with the previously reported for free (unconfined) thiol-capped gold nanoparticles. The successful inclusion of stable magnetic Au nanoparticles within transparent mesoporous thin films opens the gates for the application of these nanocomposites in two-dimensional (2D) microdevices technology and magneto-optical devices.
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Affiliation(s)
- Leticia P Granja
- Departamento de Física de la Materia Condensada, Gerencia de Investigación y Aplicaciones, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, CONICET , Av. Gral. Paz 1499, B1650KNA, San Martín, Buenos Aires, Argentina
| | - Eduardo D Martínez
- Gerencia Química, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, CONICET , Av. Gral. Paz 1499, B1650KNA, San Martín, Buenos Aires, Argentina
| | - Horacio Troiani
- División Física de Metales, Gerencia Física, and Instituto Baseiro (UNCU), CONICET, Centro Atómico Bariloche, Comisión Nacional de Energía Atómica , Av. Bustillo 9500 (8400), S. C. de Bariloche, Río Negro, Argentina
| | - Clément Sanchez
- UPMC Univ. Paris 06, CNRS, Collège de France, UMR 7574, Laboratoire Chimie de la Matière Condensée de Paris, Collège de France , 11 place Marcelin Berthelot, 75005, Paris, France
| | - Galo J A A Soler Illia
- Instituto de Nanosistemas, Universidad Nacional de General San Martín, CONICET , Av. 25 de Mayo y Francia, 1650, San Martín, Buenos Aires, Argentina
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