Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Gate-controlled ionic intercalation in the van der Waals gap of 2D layered materials can induce novel phases and unlock new properties. However, this strategy is often unsuitable for densely packed 2D non-layered materials. The non-layered rhombohedral Cr2S3 is an intrinsic heterodimensional superlattice with alternating layers of 2D CrS2 and 0D Cr1/3. Here an innovative chemical vapor deposition method is reported, utilizing strategically modified metal precursors to initiate entirely new seed layers, yields ultrathin inclined-standing grown 2D Cr2S3 nanosheets with edge instead of face contact with substrate surfaces, enabling rapid all-dry transfer to other substrates while ensuring high crystal quality. The unconventional ordered vacancy channels within the 0D Cr1/3 layers, as revealed by cross-sectional scanning transmission electron microscope, permitting the insertion of Li+ ions. An unprecedented metal-insulator transition, with a resistance modulation of up to six orders of magnitude at 300 K, is observed in Cr2S3-based ionic field-effect transistors. Theoretical calculations corroborate the metallization induced by Li-ion intercalation. This work sheds light on the understanding of growth mechanism, structure-property correlation and highlights the diverse potential applications of 2D non-layered Cr2S3 superlattice.

Redox Gating for Colossal Carrier Modulation and Unique Phase Control

Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 1016 cm-2, sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.

Electrical mapping of thermoelectric power factor in WO3 thin film

With growing environmental awareness and considerable research investment in energy saving, the concept of energy harvesting has become a central topic in the field of materials science. The thermoelectric energy conversion, which is a classic physical phenomenon, has emerged as an indispensable thermal management technology. In addition to conventional experimental investigations of thermoelectric materials, seeking promising materials or structures using computer-based approaches such as machine learning has been considered to accelerate research in recent years. However, the tremendous experimental efforts required to evaluate materials may hinder us from reaping the benefits of the fast-developing computer technology. In this study, an electrical mapping of the thermoelectric power factor is performed in a wide temperature-carrier density regime. An ionic gating technique is applied to an oxide semiconductor WO3, systematically controlling the carrier density to induce a transition from an insulating to a metallic state. Upon electrically scanning the thermoelectric properties, it is demonstrated that the thermoelectric performance of WO3 is optimized at a highly degenerate metallic state. This approach is convenient and applicable to a variety of materials, thus prompting the development of novel functional materials with desirable thermoelectric properties.

Evolution of ferroelectricity in ultrathin PbTiO3 films as revealed by electric double layer gating

Ferroelectricity in ultrathin films is destabilized by depolarization field, which leads to the reduction of spontaneous polarization or domain formation. Here, thickness dependence of remnant polarization in PbTiO₃ films is electrically revealed down to 2.6 nm by controlling the polarization direction with employing an electric double layer gating technique to suppress leakage current in ultrathin films. The remnant polarization for a 17 nm-thick film is similar to bulk value ~ 60 μC cm^-2 and reduces to ~ 20 μC cm^-2 for a 2.6 nm-thick film, whereas robust ferroelectricity is clearly observed in such ultrathin films. In-situ X-ray diffraction measurements under an external electric field reveal that the reduced tetragonality in ultrathin films is mostly recovered by cancelling out the depolarization field. Electric double layer gating technique is an excellent way for exploring physical properties in ultrathin ferroelectric films.

Protonic solid-state electrochemical synapse for physical neural networks

Physical neural networks made of analog resistive switching processors are promising platforms for analog computing. State-of-the-art resistive switches rely on either conductive filament formation or phase change. These processes suffer from poor reproducibility or high energy consumption, respectively. Herein, we demonstrate the behavior of an alternative synapse design that relies on a deterministic charge-controlled mechanism, modulated electrochemically in solid-state. The device operates by shuffling the smallest cation, the proton, in a three-terminal configuration. It has a channel of active material, WO3. A solid proton reservoir layer, PdHx, also serves as the gate terminal. A proton conducting solid electrolyte separates the channel and the reservoir. By protonation/deprotonation, we modulate the electronic conductivity of the channel over seven orders of magnitude, obtaining a continuum of resistance states. Proton intercalation increases the electronic conductivity of WO3 by increasing both the carrier density and mobility. This switching mechanism offers low energy dissipation, good reversibility, and high symmetry in programming.

Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO3 Thin Films

Lattice defects typically reduce lattice thermal conductivity, which has been widely exploited in applications such as thermoelectric energy conversion. Here, an anomalous dependence of the lattice thermal conductivity on point defects is demonstrated in epitaxial WO₃ thin films. Depending on the substrate, the lattice of epitaxial WO₃ expands or contracts as protons are intercalated by electrolyte gating or oxygen vacancies are introduced by adjusting growth conditions. Surprisingly, the observed lattice volume, instead of the defect concentration, plays the dominant role in determining the thermal conductivity. In particular, the thermal conductivity increases significantly with proton intercalation, which is contrary to the expectation that point defects typically lower the lattice thermal conductivity. The thermal conductivity can be dynamically varied by a factor of ≈1.7 via electrolyte gating, and tuned over a larger range, from 7.8 to 1.1 W m^-1 K^-1 , by adjusting the oxygen pressure during film growth. The electrolyte-gating-induced changes in thermal conductivity and lattice dimensions are reversible through multiple cycles. These findings not only expand the basic understanding of thermal transport in complex oxides, but also provide a path to dynamically control the thermal conductivity.

High-Pressure Synthesis of Non-Stoichiometric Li x WO3 (0.5 ≤ x ≤ 1.0) with LiNbO3 Structure

Compounds with the LiNbO₃-type structure are important for a variety of applications, such as piezoelectric sensors, while recent attention has been paid to magnetic and electronic properties. However, all the materials reported are stoichiometric. This work reports on the high-pressure synthesis of lithium tungsten bronze Li_xWO₃ with the LiNbO₃-type structure, with a substantial non-stoichiometry (0.5 ≤ x ≤ 1). Li_0.8WO₃ exhibit a metallic conductivity. This phase is related to an ambient-pressure perovskite phase (0 ≤ x ≤ 0.5) by the octahedral tilting switching between a⁻a⁻a⁻ and a⁺a⁺a⁺.

Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors

Electric double layer (EDL) dynamics in graphene field-effect transistors (FETs) gated with polyethylene oxide (PEO)-based electrolytes are studied by molecular dynamics (MD) simulations from picoseconds to nanoseconds and experimentally from microseconds to milliseconds. Under an applied field of approximately mV/nm, EDL formation on graphene FETs gated with PEO:CsClO₄ occurs on the timescale of microseconds at room temperature and strengthens within 1 ms to a sheet carrier density of n_S ≈ 10¹³ cm^-2. Stronger EDLs (i.e., larger n_S) are induced experimentally by pulsing with applied voltages exceeding the electrochemical window of the electrolyte; electrochemistry is avoided using short pulses of a few milliseconds. Dynamics on picosecond to nanosecond timescales are accessed using MD simulations of PEO:LiClO₄ between graphene electrodes with field strengths of hundreds of mV/nm which is 100× larger than experiment. At 100 mV/nm, EDL formation initiates in sub-nanoseconds achieving charge densities up to 6 × 10¹³ cm^-2 within 3 nanoseconds. The modeling shows that under sufficiently high electric fields, EDLs with densities ∼10¹³ cm^-2 can form within a nanosecond, which is a timescale relevant for high-performance electronics such as EDL transistors (EDLTs). Moreover, the combination of experiment and modeling shows that the timescale for EDL formation ( n_S = 10¹³ to 10¹⁴ cm^-2) can be tuned by 9 orders of magnitude by adjusting the field strength by only 3 orders of magnitude.

Dynamic Field Modulation of the Octahedral Framework in Metal Oxide Heterostructures

Control over the oxygen octahedral framework is widely recognized as key to the design of functional properties in perovskite oxide heterostructures. Although the oxygen octahedral framework can be manipulated during synthesis, the as-grown oxygen octahedra generally remain fixed, preventing the development of adaptive behavior in electronic and ionotronic systems. Here, it is demonstrated that the oxygen octahedral framework can be dynamically and reversibly manipulated by an electric field through the coupling with oxygen vacancies. Studying model WO₃ heterostructures during ionic liquid gating with a combination of in situ X-ray scattering and spectroscopy, it is shown that large changes in electronic properties can arise due to the increased flexibility of the octahedral network at high vacancy concentrations. The results describe a generic framework for the construction of dynamic systems and devices with an array of field-tunable properties.

Electric-Field-Controlled Phase Transformation in WO3 Thin Films through Hydrogen Evolution

Field-effect transistors with ionic-liquid gating (ILG) have been widely employed and have led to numerous intriguing phenomena in the last decade, due to the associated excellent carrier-density tunability. However, the role of the electrochemical effect during ILG has become a heavily debated topic recently. Herein, using ILG, a field-induced insulator-to-metal transition is achieved in WO₃ thin films with the emergence of structural transformations of the whole films. The subsequent secondary-ion mass spectrometry study provides solid evidence that electrochemically driven hydrogen evolution dominates the discovered electrical and structural transformation through surface absorption and bulk intercalation.

Conductivity Modulation of Gold Thin Film at Room Temperature via All-Solid-State Electric-Double-Layer Gating Accelerated by Nonlinear Ionic Transport

We demonstrated the field-effect conductivity modulation of a gold thin film by all-solid-state electric-double-layer (EDL) gating at room temperature using an epitaxially grown oxide fast lithium conductor, La_2/3-xLi_3xTiO₃ (LLT), as a solid electrolyte. The linearly increasing gold conductivity with increasing gate bias demonstrates that the conductivity modulation is indeed due to carrier injection by EDL gating. The response time becomes exponentially faster with increasing gate bias, a result of the onset of nonlinear ionic transportation. This nonlinear dynamic response indicates that the ionic motion-driven device can be much faster than would be estimated from a linear ionic transport model.