Surface Control of Doping in Self-Doped Nanocrystals

Bound and Continuum Intersubband Transitions in Colloidal Quantum Wells

Quantum well intersubband transitions are critical for quantum cascade lasers and infrared photodetectors. Control of band offsets allows bound-to-bound intersubband transitions, with confinement of both initial and final states, and bound-to-continuum transitions, in which only the initial state is energetically confined within the potential well. Both types of transitions are also achieved in colloidal CdSe wells by changing the heterostructure shell. Bare wells have narrow intersubband transitions spanning the near-infrared spectrum following effective mass predictions. Atomically precise core/shells enable a readily adjusted potential well for electrons. For CdSe/ZnS, bound-to-bound transitions are narrow and redshift with shell thickness. By contrast, broad bound-to-continuum absorptions are found in CdSe/CdS. Due to small conduction band offsets, higher conduction band states of the well are more delocalized into the CdS shell. These measurements provide unique data to understand the electronic structure of colloidal quantum wells and chart a path to atomically precise optoelectronic materials for the mid-infrared.

Ultranarrow Mid-infrared Quantum Plasmon Resonance of Self-Doped Silver Selenide Nanocrystal

The infrared quantum plasmon resonance (IR QPR) of nanocrystals (NCs) exhibits the combined properties of classical and quantum mechanics, potentially overcoming the limitations of conventional optical features. However, research on the development of localized surface plasmon resonance (LSPR) from colloidal quantum dots has stagnated, owing to the challenge of increasing the carrier density of semiconductor NCs. Herein, we present the mid-IR QPR of a self-doped Ag2Se NC with an exceptionally narrow bandwidth. Chemical modification of the NC surface with chloride realizes this narrow QPR bandwidth by achieving a high free-carrier density in the NC. The mid-IR QPR feature was thoroughly analyzed by using various experimental methods such as Fourier transform (FT) IR spectroscopy, X-ray photoelectron spectroscopy, and current-voltage measurements. In addition, the optical properties were theoretically analyzed using the plamon-in-a-box model and a modified hydrodynamic model that revealed the effect of coupling with the intraband transition and the limited nature of electron density in semiconductor NCs. Integrating the quantum effect into the plasmonic resonance reduces the peak bandwidth to 19.7 meV, which is an extremely narrow bandwidth compared with that of the LSPR of conventional metal oxide or metal chalcogenide NCs. Our results demonstrate that self-doped silver selenide quantum dots are excellent systems for studying mid-IR QPR.

Colloidal Ag2Se intraband quantum dots

With the emergence of the Internet of Things, wearable electronics, and machine vision, the exponentially growing demands for miniaturization, energy efficiency, and cost-effectiveness have imposed critical requirements on the size, weight, power consumption and cost (SWaP-C) of infrared detectors. To meet this demand, new sensor technologies that can reduce the fabrication cost associated with semiconductor epitaxy and remove the stringent requirement for cryogenic cooling are under active investigation. In the technologically important spectral region of mid-wavelength infrared, intraband colloidal quantum dots are currently at the forefront of this endeavor, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. In this Feature Article, we provide a focused review on the development of sensors based on Ag2Se intraband colloidal quantum dots, a heavy metal-free colloidal nanomaterial that has merits for wide-scale adoption in consumer and industrial sectors.

Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications

Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.

A methodology to generate crystal-based molecular structures for atomistic simulations

We propose a systematic method to construct crystal-based molecular structures often needed as input for computational chemistry studies. These structures include crystal 'slabs' with periodic boundary conditions (PBCs) and non-periodic solids such as Wulff structures. We also introduce a method to build crystal slabs with orthogonal PBC vectors. These methods are integrated into our code,Los Alamos Crystal Cut(LCC), which is open source and thus fully available to the community. Examples showing the use of these methods are given throughout the manuscript.

The Historical Development of Infrared Photodetection Based on Intraband Transitions

The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including 'bottom to up' devices such as quantum well devices based on the molecular beam epitaxial approach, as well as 'up to bottom' devices such as colloidal quantum dot devices based on the chemical synthesis.

Substrate Effects on the Bandwidth of CdSe Quantum Dot Photodetectors

We investigate the time-resolved photocurrent response of CdSe quantum dot (QD) thin films sensitized with zinc β-tetraaminophthalocyanine (Zn4APc) (Kumar , ACS Appl. Mater. Interfaces, 2019, 11, 48271-48280) on three different substrates, namely, silicon with 230 nm SiO₂ dielectric, glass, and polyimide. While Si/SiO₂ (230 nm) is not suitable for any transient photocurrent characterization due to an interfering photocurrent response of the buried silicon, we find that polyimide substrates invoke the larger optical bandwidth with 85 kHz vs 67 kHz for the same quantum dot thin film on glass. Upon evaluation of the transient photocurrent, we find that the photoresponse of the CdSe quantum dot films can be described as a combination of carrier recombination and fast trapping within 2.7 ns followed by slower multiple trapping events. The latter are less pronounced on polyimide, which leads to the higher bandwidth. We show that all devices are resistance-capacitance (RC)-time limited and that improvements of photoresistance are the key to further increasing the bandwidth.

Synthesis and low-order optical nonlinearities of colloidal HgSe quantum dots in the visible and near infrared ranges

We synthesize colloidal HgSe quantum dots and characterize their nonlinear refraction and nonlinear absorption using a Nd:YAG laser and its second harmonic. The 7.5 nm quantum dots were synthesized using the hot-injection method. The nonlinear absorption (β = 9×10^-7 cm W^-1) and negative nonlinear refraction (γ = -5×10^-12 cm² W^-1) coefficients of colloidal quantum dots were determined using the 10 ns, 532 nm laser radiation. The joint influence of above processes was realized at a higher intensity of probe pulses. In the case of 10 ns, 1064 nm radiation, only negative nonlinear refraction dominated during z-scans of these quantum dots. The studies of optical limiting using two laser sources demonstrated the effectiveness of this process at 532 nm. The role of nonlinear scattering is analyzed. We discuss the mechanisms responsible for the nonlinear refraction processes in colloidal HgSe quantum dots.

Beyond the Bandgap Photoluminescence of Colloidal Semiconductor Nanocrystals

Intraband transitions of colloidal semiconductor nanocrystals, or the electronic transitions occurring in either the conduction band or valence band, have recently received considerable attention because utilizing the intraband transitions provides new approaches for applications such as photodetectors, imaging, solar cells, lasers, and so on. In the past few years, it has been revealed that observing the intraband transition is not limited for temporal measurement such as ultrafast spectroscopy but available for steady-state measurement even under ambient conditions with the help of self-doped semiconductor nanocrystals. Considering the large absorption coefficient of the steady-state intraband transition comparable to that of the bandgap transition, the use of the intraband transition will be promising for both fundamental and application studies. Here, we summarize the recent progress in studies on intraband photoluminescence of self-doped semiconductor nanocrystals and discuss key questions to be addressed in future research.

Exploiting the Lability of Metal Halide Perovskites for Doping Semiconductor Nanocomposites

Cesium lead halides have intrinsically unstable crystal lattices and easily transform within perovskite and nonperovskite structures. In this work, we explore the conversion of the perovskite CsPbBr₃ into Cs₄PbBr₆ in the presence of PbS at 450 °C to produce doped nanocrystal-based composites with embedded Cs₄PbBr₆ nanoprecipitates. We show that PbBr₂ is extracted from CsPbBr₃ and diffuses into the PbS lattice with a consequent increase in the concentration of free charge carriers. This new doping strategy enables the adjustment of the density of charge carriers between 10¹⁹ and 10²⁰ cm^-3, and it may serve as a general strategy for doping other nanocrystal-based semiconductors.

Synthesis, Bottom up Assembly and Thermoelectric Properties of Sb-Doped PbS Nanocrystal Building Blocks

The precise engineering of thermoelectric materials using nanocrystals as their building blocks has proven to be an excellent strategy to increase energy conversion efficiency. Here we present a synthetic route to produce Sb-doped PbS colloidal nanoparticles. These nanoparticles are then consolidated into nanocrystalline PbS:Sb using spark plasma sintering. We demonstrate that the introduction of Sb significantly influences the size, geometry, crystal lattice and especially the carrier concentration of PbS. The increase of charge carrier concentration achieved with the introduction of Sb translates into an increase of the electrical and thermal conductivities and a decrease of the Seebeck coefficient. Overall, PbS:Sb nanomaterial were characterized by two-fold higher thermoelectric figures of merit than undoped PbS.

Vertically Stacked Intraband Quantum Dot Devices for Mid-Wavelength Infrared Photodetection

Intraband quantum dots are degenerately doped semiconductor nanomaterials that exhibit unique optical properties in mid- to long-wavelength infrared. To date, these quantum dots have been only studied as lateral photoconductive devices, while transitioning toward a vertically stacked structure can open diverse opportunities for investigating advanced device designs. Here, we report the first vertical intraband quantum dot heterojunction devices composed of Ag₂Se/PbS/Ag₂Se quantum dot stacks that bring the advantage of reduced dark conductivity with a simplified device fabrication procedure. We discuss the improvement in the colloidal synthesis of Ag₂Se quantum dots that are critical for vertical device fabrication, identify an important process that determines the mid-wavelength infrared responsivity of the quantum dot film, and analyze the basic device characteristics and key detector performance parameters. Compared to the previous generation of Ag₂Se quantum dot-based photoconductive devices, approximately 70 times increase in the mid-wavelength responsivity, at room temperature, is observed.

Ternary alloyed HgCdTe nanocrystals for short-wave and mid-wave infrared region optoelectronic applications

Semiconductor quantum dots (QDs) are emerging as the forefront alternative for the conventional imaging technology, particularly in infrared region from near infrared (0.75–1.4 μm) to long-wave infrared (8–14 μm) region. A handful of materials are explored for mid infrared imaging QDs and they are all invariably binary semiconductor compounds. Ternary alloyed quantum dots in many previous cases have shown properties that are unique and better than parent binary compounds. In this work, we have synthesized ternary alloyed HgCdTe quantum dots and studied their photophysical properties. Previously studied ternary alloyed HgCdTe CQDs absorb and emit in regions limited upto near-infrared region. We have tuned the excitonic absorption of HgCdTe QDs in the range of 2.2–5 μm, where addition of cadmium clearly showed blueshift in excitonic peak as compared to that of HgTe QDs. Structural properties are studied by TEM, XRD & XPS techniques. Electrical behaviour is studied by measuring I-V, I-V-T curves. Photodetectors are fabricated in photoconductive geometry showing promising photo-response under visible (532 nm) and NIR (810 nm, 1550 nm) excitation. Responsivity of the devices is in the order of 1 mA W−1 at 1 V bias and show good linearity over irradiance range of 0.025 and 2.5 W cm−2. These results pave the way for development of next generation cost-effective short-wave and mid-wave infrared region optoelectronic devices based on narrow bandgap HgCdTe nanocrystals.

A colloidal quantum dot infrared photodetector and its use for intraband detection

Wavefunction engineering using intraband transition is the most versatile strategy for the design of infrared devices. To date, this strategy is nevertheless limited to epitaxially grown semiconductors, which lead to prohibitive costs for many applications. Meanwhile, colloidal nanocrystals have gained a high level of maturity from a material perspective and now achieve a broad spectral tunability. Here, we demonstrate that the energy landscape of quantum well and quantum dot infrared photodetectors can be mimicked from a mixture of mercury selenide and mercury telluride nanocrystals. This metamaterial combines intraband absorption with enhanced transport properties (i.e. low dark current, fast time response and large thermal activation energy). We also integrate this material into a photodiode with the highest infrared detection performances reported for an intraband-based nanocrystal device. This work demonstrates that the concept of wavefunction engineering at the device scale can now be applied for the design of complex colloidal nanocrystal-based devices.

The field of wavefunction engineering using intraband transition to design infrared devices has been limited to epitaxially grown semiconductors. Here the authors demonstrate that a device with similar energy landscape can be obtained from a mixture of colloidal quantum dots made of HgTe and HgSe.

Colloidal quantum dots for thermal infrared sensing and imaging

Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal infrared spectral regions where no other solution-processed material options exist. This mini-review collates recent research reports that push the technological envelope of colloidal quantum dot-based photodetectors toward mid- and long-wavelength infrared. We survey the synthesis and characterization of various thermal infrared colloidal quantum dots reported to date, discuss the basic theory of device operation, review the fabrication and measurement of photodetectors, and conclude with the future prospect of this emerging technology.

Multifunctional Self-Doped Nanocrystal Thin-Film Transistor Sensors

Self-doping in nanocrystals allows accessing higher quantum states. The electrons occupying the lowest energy state of the conduction band form a metastable state that is very sensitive to the electrostatic potential of the surface. Here, we demonstrate that the high charge sensitivity of the self-doped HgSe colloidal quantum dot solid can be used for sensing three different targets with different phases through self-doped HgSe nanocrystal/ZnO thin-film transistors: the environmental gases (CO₂ gas, NO gas, and H₂S gas); mid-IR photon; and biothiol (l-cysteine) molecules. The self-doped quantum dot solid detects the targets through different mechanisms. The physisorption of the CO₂ gas and the NO gas molecules, and the mid-IR photodetection show reversible processes, whereas the chemisorption of l-cysteine biothiol and H₂S gas molecules shows irreversible processes. Considering the quenching of mid-IR intraband photoluminescence of the HgSe colloidal quantum dot solid by the vibrational mode of the CO₂ gas molecule, sensing the CO₂ gas could be involved in the electronic-to-vibrational energy transfer. The target molecules are quantitatively analyzed, and the limits of detection for CO₂ and l-cysteine are 250 ppm and 10 nM, respectively, which are comparable to the performance of commercial detectors.

Road Map for Nanocrystal Based Infrared Photodetectors

Infrared (IR) sensors based on epitaxially grown semiconductors face two main challenges which are their prohibitive cost and the difficulty to rise the operating temperature. The quest for alternative technologies which will tackle these two difficulties requires the development of new IR active materials. Over the past decade, significant progresses have been achieved. In this perspective, we summarize the current state of the art relative to nanocrystal based IR sensing and stress the main materials, devices and industrial challenges which will have to be addressed over the 5 next years.

Conduction Band Fine Structure in Colloidal HgTe Quantum Dots

HgTe colloidal quantum dots (QDs) are of interest because quantum confinement of semimetallic bulk HgTe allows one to synthetically control the bandgap throughout the infrared. Here, we synthesize highly monodisperse HgTe QDs and tune their doping both chemically and electrochemically. The monodispersity of the QDs was evaluated using small-angle X-ray scattering (SAXS) and suggests a diameter distribution of ∼10% across multiple batches of different sizes. Electron-doped HgTe QDs display an intraband absorbance and bleaching of the first two excitonic features. We see splitting of the intraband peaks corresponding to electronic transitions from the occupied 1S_e state to a series of nondegenerate 1P_e states. Spectroelectrochemical studies reveal that the degree of splitting and relative intensity of the intraband features remain constant across doping levels up to two electrons per QD. Theoretical modeling suggests that the splitting of the 1P_e level arises from spin-orbit coupling and reduced QD symmetry. The fine structure of the intraband transitions is observed in the ensemble studies due to the size uniformity of the as-synthesized QDs and strong spin-orbit coupling inherent to HgTe.

Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties

The use of intraband transition is an interesting alternative path for the design of optically active complex colloidal materials in the mid-infrared range. However, so far, the performance obtained for photodetection based on intraband transition remains much smaller than the one relying on interband transition in narrow-band-gap materials operating at the same wavelength. New strategies have to be developed to make intraband materials more effective. Here, we propose growing a heterostructure of HgSe/HgTe as a means of achieving enhanced intraband-based photoconduction. We first tackle the synthetic challenge of growing a heterostructure on soft (Hg-based) material. The electronic spectrum of the grown heterostructure is then investigated using a combination of numerical simulation, infrared spectroscopy, transport measurement, and photoemission. We report a type-II band alignment with reduced doping compared with a core-only object and boosted hole conduction. Finally, we probe the photoconductive properties of the heterostructure while resonantly exciting the intraband transition by using a high-power-density quantum cascade laser. Compared to the previous generation of material based on core-only HgSe, the heterostructures have a lower dark current, stronger temperature dependence, faster photoresponse (with a time response below 50 μs), and detectivity increased by a factor of 30.

Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals

Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.

Self-doped colloidal semiconductor nanocrystals with intraband transitions in steady state

The tunable bandgap energy has been recognized as a prominent feature of the colloidal semiconductor nanocrystal, also called the colloidal quantum dot (CQD).

HgSe Self-Doped Nanocrystals as a Platform to Investigate the Effects of Vanishing Confinement

Self-doped colloidal quantum dots (CQDs) attract a strong interest for the design of a new generation of low-cost infrared (IR) optoelectronic devices because of their tunable intraband absorption feature in the mid-IR region. However, very little remains known about their electronic structure which combines confinement and an inverted band structure, complicating the design of optimized devices. We use a combination of IR spectroscopy and photoemission to determine the absolute energy levels of HgSe CQDs with various sizes and surface chemistries. We demonstrate that the filling of the CQD states ranges from 2 electrons per CQD at small sizes (<5 nm) to more than 18 electrons per CQD at large sizes (≈20 nm). HgSe CQDs are also an interesting platform to observe vanishing confinement in colloidal nanoparticles. We present lines of evidence for a semiconductor-to-metal transition at the CQD level, through temperature-dependent absorption and transport measurements. In contrast with bulk systems, the transition is the result of the vanishing confinement rather than the increase of the doping level.

Charge Dynamics and Optolectronic Properties in HgTe Colloidal Quantum Wells

We investigate the electronic and transport properties of HgTe 2D colloidal quantum wells. We demonstrate that the material can be made p- or n-type depending on the capping ligands. In addition to the control of majority carrier type, the surface chemistry also strongly affects the photoconductivity of the material. These transport measurements are correlated with the electronic structure determined by high resolution X-ray photoemission. We attribute the change of majority carriers to the strong hybridization of an n-doped HgS layer resulting from capping the HgTe nanoplatelets by S^2- ions. We further investigate the gate and temperature dependence of the photoresponse and its dynamics. We show that the photocurrent rise and fall times can be tuned from 100 μs to 1 ms using the gate bias. Finally, we use time-resolved photoemission spectroscopy as a probe of the transport relaxation to determine if the observed dynamics are limited by a fundamental process such as trapping. These pump probe surface photovoltage measurements show an even faster relaxation in the 100-500 ns range, which suggests that the current performances are rather limited by geometrical factors.

Reversible Electrochemistry of Mercury Chalcogenide Colloidal Quantum Dot Films

The absolute positions of the energy levels of colloidal quantum dots of Hg(S, Se, Te), which are of interest as mid-infrared materials, are determined by electrochemistry. The bulk valence bands are at -5.85, -5.50, and -4.77 eV (±0.05 eV) for zinc-blend HgS, HgSe, HgTe, respectively, in the same order as the anions p-orbital energies. The conduction bands are conversely at -5.20, -5.50, and -4.77 eV. The stable ambient n-doping of Hg(S, Se) quantum dots compared to HgTe arises because the conduction band is sufficiently lower than the measured environment Fermi level of ∼ -4.7 eV to allow for n-doping for HgS and HgSe quantum dots even with significant electron confinement. The position of the Fermi level and the quantum dots states are reported for a specific surface treatment with ethanedithiol and electrolyte environment. The positions are however sensitive to different surface treatments, providing an avenue to control doping. Electrochemical gating is further used to determine the carrier mobility in the films of the three different systems as a function of CQD size. HgSe and HgS show increasing mobility with increasing particle sizes while HgTe shows a nonmonotonous behavior, which is attributed to some degree of aggregation of HgTe QDs.

Transport in a Single Self-Doped Nanocrystal

Addressing the optical properties of a single nanoparticle in the infrared is particularly challenging, thus alternative methods for characterizing the conductance spectrum of nanoparticles in this spectral range need to be developed. Here we describe an efficient method of fabricating single nanoparticle tunnel junctions on a chip circuit. We apply this method to narrow band gap nanoparticles of HgSe, which band structure combines the inverted character of the bulk semimetal with quantum confinement and self-doping. Upon tuning the gate bias, measurement reveals the presence of two energy gaps in the spectrum. The wider gap results from the interband gap, while the narrower gap results from intraband transitions. The observation of the latter near zero gate voltage confirms the doped character of the nanoparticle at the single particle level, which is in full agreement with the ensemble optical and transport measurements. Finally we probe the phototransport within a single quantum dot and demonstrate a large photogain mechanism resulting from photogating.