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Konov YV, Pykhtin DA, Bikbaev RG, Timofeev IV. Tamm plasmon polariton-based planar hot-electron photodetector for the near-infrared region. NANOSCALE 2024. [PMID: 38669098 DOI: 10.1039/d4nr00710g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
Light-trapping devices have always been a topic of intense interest among researchers. One such device that has gained attention is the hot-electron photodetector with a tunable detection wavelength. Photodetectors based on plasmon nanostructures that provide excitation of surface plasmon polaritons are challenging to manufacture. To address this issue, a planar hot-electron photodetector based on a Tamm plasmon polariton localized in a metal-semiconductor-multilayer mirror structure has been proposed in this study. The parameters and materials of the structure were adjusted to ensure perfect absorption at the resonance wavelength. As a result, the photoresponsivity of the proposed device can reach 42.6 mA W-1 at 905 nm. For the first time, the photosensitivity was calculated analytically by solving the dispersion law for the Tamm plasmon polariton.
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Affiliation(s)
- Yurii V Konov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia.
- Siberian Federal University, Krasnoyarsk 660041, Russia
| | - Dmitrii A Pykhtin
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia.
- Siberian Federal University, Krasnoyarsk 660041, Russia
| | - Rashid G Bikbaev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia.
- Siberian Federal University, Krasnoyarsk 660041, Russia
| | - Ivan V Timofeev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia.
- Siberian Federal University, Krasnoyarsk 660041, Russia
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2
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Zang C, Li B, Sun Y, Feng S, Wang XZ, Wang X, Sun DM. Uniform self-rectifying resistive random-access memory based on an MXene-TiO 2 Schottky junction. NANOSCALE ADVANCES 2022; 4:5062-5069. [PMID: 36504734 PMCID: PMC9680946 DOI: 10.1039/d2na00281g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 10/08/2022] [Indexed: 06/17/2023]
Abstract
For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO2 Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO2 interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO2 and TiO2-Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 103, which offers great potential for large-scale RRAM applications based on MXene materials.
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Affiliation(s)
- Chao Zang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Physical Science and Technology, ShanghaiTech University 393 Huaxiazhong Road Shanghai 200031 China
| | - Xin-Zhe Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Xiaohui Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
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3
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Underwood TM, Robinson RS. Adducing Knowledge Capabilities of Instrumental Techniques Through the Exploration of Heterostructures' Modification Methods. Chemphyschem 2022; 23:e202200241. [PMID: 35965256 PMCID: PMC9804862 DOI: 10.1002/cphc.202200241] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 07/25/2022] [Indexed: 01/09/2023]
Abstract
The ongoing evolution of technology has facilitated the global research community to rapidly escalate the constant development of novel advancements in science. At the forefront of such achievements in the field of photocatalysis is the utilisation, and in oftentimes, the adaptation of modern instrumentation to understand photo-physical properties of complex heterostructures. For example, coupling in-situ X-ray Raman scattering spectroscopy for real-time degradation of catalytic materials.
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Affiliation(s)
- Timothy M. Underwood
- School of Chemistry and PhysicsUniversity of KwaZulu-NatalPrivate Bag X01, ScottsvillePietermaritzburg3209South Africa
| | - Ross S. Robinson
- School of Chemistry and PhysicsUniversity of KwaZulu-NatalPrivate Bag X01, ScottsvillePietermaritzburg3209South Africa
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4
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Electrical and dielectric parameters in TiO 2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique. Sci Rep 2021; 11:19837. [PMID: 34615953 PMCID: PMC8494745 DOI: 10.1038/s41598-021-99354-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Accepted: 09/14/2021] [Indexed: 11/08/2022] Open
Abstract
This paper reports the catalyst-free coaxial TiO2/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of an Ag/TiO2-NW/Ge-NW/Si device over a wide range of frequency (10 kHz–5 MHz) and voltage (− 5 V to + 5 V) at room temperature were investigated. The study established strong dependence on the applied frequency and voltage bias. Both C–V and G/ω–V values showed wide dispersion in depletion region due to interface defect states (Dit) and series resistance (Rs). The C and G/ω value decreases with an increase in applied frequency. The voltage and frequency-dependent Dit and Rs were calculated from the Hill-Coleman and Nicollian–Brews methods, respectively. It is observed that the overall Dit and Rs for the device decrease with an increase in the frequency at different voltages. The dielectric properties such as dielectric constant (\documentclass[12pt]{minimal}
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5
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Park JH, Yang SJ, Choi CW, Choi SY, Kim CJ. Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22828-22835. [PMID: 33950688 DOI: 10.1021/acsami.1c03299] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal (M) contact with a semiconductor (S) introduces metal-induced gap states (MIGS), which makes it difficult to study the intrinsic electrical properties of S. A bilayer of metal with graphene (Gr), i.e., a M/Gr bilayer, may form a contact with S to minimize MIGS. However, it has been challenging to realize the pristine M/Gr/S junctions without interfacial contaminants, which result in additional interfacial states. Here, we successfully demonstrate the atomically clean M/Gr/n-type silicon (Si) junctions via all-dry transfer of M/Gr bilayers onto Si. The fabricated M/Gr/Si junctions significantly increase the current density J at reverse bias, compared to those of M/Si junctions without a Gr interlayer (e.g., by 105 times for M = Au in Si(111)). The increase of the reverse J by a Gr interlayer is more prominent in Si(111) than in Si(100), whereas in M/Si junctions, J is independent of the type of Si surface. The different transport data between M/Gr/Si(111) and M/Gr/Si(100) are consistent with Fermi-level pinning by different surface states of Si(111) and Si(100). Our findings suggest the effective way to suppress MIGS by an introduction of the clean Gr interlayer, which paves the way to study intrinsic electrical properties of various materials.
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Affiliation(s)
- Jun-Ho Park
- Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Seong-Jun Yang
- Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Chang-Won Choi
- Department of Material Science & Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Si-Young Choi
- Department of Material Science & Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
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6
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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7
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Maji TK, J R A, Mukherjee S, Alexander R, Mondal A, Das S, Sharma RK, Chakraborty NK, Dasgupta K, Sharma AMR, Hawaldar R, Pandey M, Naik A, Majumdar K, Pal SK, Adarsh KV, Ray SK, Karmakar D. Combinatorial Large-Area MoS 2/Anatase-TiO 2 Interface: A Pathway to Emergent Optical and Optoelectronic Functionalities. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44345-44359. [PMID: 32864953 DOI: 10.1021/acsami.0c13342] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The interface of transition-metal dichalcogenides (TMDCs) and high-k dielectric transition-metal oxides (TMOs) had triggered umpteen discourses because of the indubitable impact of TMOs in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser-deposited MoS2 thin film, a layer of TiO2 is grown by atomic layer deposition (ALD) and pulsed laser deposition (PLD). These two different techniques emanate the layer of TiO2 with different crystallinities, thicknesses, and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. Contrasting the earlier reports of n-type doping at the exfoliated MoS2/TiO2 interfaces, the large-area MoS2/anatase-TiO2 films had realized a p-type doping of the underneath MoS2, manifesting a boost in the extent of p-type doping with increasing thickness of TiO2, as emerged from the X-ray photoelectron spectra. Density functional analysis of the MoS2/anatase-TiO2 interfaces, with pristine and interfacial defect configurations, could correlate the interdependence of doping and the terminating atomic surface of TiO2 on MoS2. The optical properties of the interface, encompassing photoluminescence, transient absorption and z-scan two-photon absorption, indicate the presence of defect-induced localized midgap levels in MoS2/TiO2 (PLD) and a relatively defect-free interface in MoS2/TiO2 (ALD), corroborating nicely with the corresponding theoretical analysis. From the investigation of optical properties, we indicate that the MoS2/TiO2 (PLD) interface may act as a promising saturable absorber, having a significant nonlinear response for the sub-band-gap excitations. Moreover, the MoS2/TiO2 (PLD) interface had exemplified better phototransport properties. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type phototransistor with the ionic-gel top gate. This endeavor to analyze and perceive the MoS2/TiO2 interface establishes the prospectives of large-area interfaces in the field of optics and optoelectronics.
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Affiliation(s)
- Tuhin Kumar Maji
- Department of Chemical Biological and Macromolecular Sciences, S. N. Bose National Centre for Basic Sciences, Sector III, JD Block, Kolkata 700106, India
| | - Aswin J R
- Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066, India
| | | | - Rajath Alexander
- Advanced Carbon Materials Section, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
| | - Anirban Mondal
- Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066, India
| | - Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Rajendra Kumar Sharma
- Raja Rammana Centre for Advance Technology, Parmanu Nagar, Sahkar Nagar Extension, 1, CAT Rd, Rajendra Nagar, Indore, Madhya Pradesh 45201, India
| | | | - Kinshuk Dasgupta
- Advanced Carbon Materials Section, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
| | - Anjanashree M R Sharma
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - Ranjit Hawaldar
- Centre for Materials for Electronics Technology, Off Pashan Road, Panchwati, Pune 411008, India
| | - Manjiri Pandey
- Accelerator Control Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
| | - Akshay Naik
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Samir Kumar Pal
- Department of Chemical Biological and Macromolecular Sciences, S. N. Bose National Centre for Basic Sciences, Sector III, JD Block, Kolkata 700106, India
| | - K V Adarsh
- Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066, India
| | - Samit Kumar Ray
- Department of Chemical Biological and Macromolecular Sciences, S. N. Bose National Centre for Basic Sciences, Sector III, JD Block, Kolkata 700106, India
- Department of Physics, IIT Kharagpur, Kharagpur, West Bengal 721302, India
| | - Debjani Karmakar
- Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
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Balasubramani V, Chandrasekaran J, Marnadu R, Vivek P, Maruthamuthu S, Rajesh S. Impact of Annealing Temperature on Spin Coated V2O5 Thin Films as Interfacial Layer in Cu/V2O5/n-Si Structured Schottky Barrier Diodes. J Inorg Organomet Polym Mater 2019. [DOI: 10.1007/s10904-019-01117-z] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Kim SH, Han KH, Kim GS, Kim SG, Kim J, Yu HY. Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure. ACS APPLIED MATERIALS & INTERFACES 2019; 11:6230-6237. [PMID: 30663311 DOI: 10.1021/acsami.8b18860] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we propose a novel structure, the metal/transition metal dichalcogenide/semiconductor structure, as a contact structure that can effectively lower the SBH with wide room for contact metal adoption. A perpendicularly integrated molybdenum disulfide (MoS2) interlayer effectively alleviates FL pinning by reducing metal-induced gap states at the MoS2/semiconductor interface. Additionally, it can induce strong FL pinning of contact metals near its CBE at the metal/MoS2 interface. The technique using FL pinning and unpinning at metal/MoS2/semiconductor interfaces is first introduced in the MIS scheme to allow the use of various contact metals. Consequently, significant reductions of the SBH from 0.48 to 0.12 eV for GaAs and from 0.56 to 0.10 eV for Ge are achieved with several different contact metals. This work significantly reduces the dependence on contact metals with lowest SBH and proposes a new way of overcoming current severe contact issues for future nanoelectronic and optoelectronic applications.
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Affiliation(s)
| | | | | | | | - Jiyoung Kim
- Department of Materials Science and Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
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Zhang Y, Han G, Wu H, Wang X, Liu Y, Zhang J, Liu H, Zheng H, Chen X, Liu C, Hao Y. Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment. NANOSCALE RESEARCH LETTERS 2018; 13:237. [PMID: 30112730 PMCID: PMC6093824 DOI: 10.1186/s11671-018-2650-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2018] [Accepted: 08/01/2018] [Indexed: 06/08/2023]
Abstract
We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO and n-Ge is obtained, and the ZnO IL leads to the significant reduced contact resistance (Rc) in metal/ZnO/n-Ge compared to the control device without ZnO, due to the elimination of FLP. It is observed that the argon (Ar) plasma treatment of ZnO can further improve the Rc characteristics in Al/ZnO/n-Ge device, which is due to that Ar plasma treatment increases the concentration of oxygen vacancy Vo, acting as n-type dopants in ZnO. The ohmic contact is demonstrated in the Al/ZnO/n-Ge with a dopant concentration of 3 × 1016 cm-3 in Ge. On the heavily doped n+-Ge with a phosphor ion (P+) implantation, a specific contact resistivity of 2.86 × 10- 5 Ω cm2 is achieved in Al/ZnO/n+-Ge with Ar plasma treatment.
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Affiliation(s)
- Yi Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
| | - Genquan Han
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
| | - Hao Wu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People’s Republic of China
| | - Xiao Wang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
| | - Yan Liu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
| | - Huan Liu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
| | - Haihua Zheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People’s Republic of China
| | - Xue Chen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People’s Republic of China
| | - Chang Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People’s Republic of China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 People’s Republic of China
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11
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Kim SH, Kim GS, Park J, Lee C, Kim H, Kim J, Shim JH, Yu HY. Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement. ACS APPLIED MATERIALS & INTERFACES 2018; 10:26378-26386. [PMID: 30003786 DOI: 10.1021/acsami.8b07066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.
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Affiliation(s)
| | | | | | - Changmin Lee
- School of Advanced Materials Science & Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Hyoungsub Kim
- School of Advanced Materials Science & Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Jiyoung Kim
- Department of Materials Science and Engineering , University of Texas at Dallas , Richardson , Texas 75080 , United States
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12
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Kim GS, Kim SH, Park J, Han KH, Kim J, Yu HY. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS 2 Transistors with Reduction of Metal-Induced Gap States. ACS NANO 2018; 12:6292-6300. [PMID: 29851473 DOI: 10.1021/acsnano.8b03331] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP) at electrical contacts is a bottleneck in designing high-performance nanoscale electronics and optoelectronics based on molybdenum disulfide (MoS2). For electrical contacts of multilayered MoS2, the Fermi level on the metal side is strongly pinned near the conduction-band edge of MoS2, which makes most MoS2-channel field-effect transistors (MoS2 FETs) exhibit n-type transfer characteristics regardless of their source/drain (S/D) contact metals. In this work, SBH engineering is conducted to control the SBH of electrical top contacts of multilayered MoS2 by introducing a metal-interlayer-semiconductor (MIS) structure which induces the Fermi-level unpinning by a reduction of metal-induced gap states (MIGS). An ultrathin titanium dioxide (TiO2) interlayer is inserted between the metal contact and the multilayered MoS2 to alleviate FLP and tune the SBH at the S/D contacts of multilayered MoS2 FETs. A significant alleviation of FLP is demonstrated as MIS structures with 1 nm thick TiO2 interlayers are introduced into the S/D contacts. Consequently, the pinning factor ( S) increases from 0.02 for metal-semiconductor (MS) contacts to 0.24 for MIS contacts, and the controllable SBH range is widened from 37 meV (50-87 meV) to 344 meV (107-451 meV). Furthermore, the Fermi-level unpinning effect is reinforced as the interlayer becomes thicker. This work widens the scope for modifying electrical characteristics of contacts by providing a platform to control the SBH through a simple process as well as understanding of the FLP at the electrical top contacts of multilayered MoS2.
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Affiliation(s)
- Gwang-Sik Kim
- School of Electrical Engineering , Korea University , Seoul 02841 , Korea
| | - Seung-Hwan Kim
- School of Electrical Engineering , Korea University , Seoul 02841 , Korea
| | - June Park
- Department of Nano Semiconductor Engineering , Korea University , Seoul 02841 , Korea
| | - Kyu Hyun Han
- School of Electrical Engineering , Korea University , Seoul 02841 , Korea
| | - Jiyoung Kim
- Department of Materials Science and Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Hyun-Yong Yu
- School of Electrical Engineering , Korea University , Seoul 02841 , Korea
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13
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Kim GS, Kim SH, Lee TI, Cho BJ, Choi C, Shin C, Shim JH, Kim J, Yu HY. Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium. ACS APPLIED MATERIALS & INTERFACES 2017; 9:35988-35997. [PMID: 28952716 DOI: 10.1021/acsami.7b10346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A metal-interlayer-semiconductor (M-I-S) structure with excellent thermal stability and electrical performance for a nonalloyed contact scheme is developed, and considerations for designing thermally stable M-I-S structure are demonstrated on the basis of n-type germanium (Ge). A thermal annealing process makes M-I-S structures lose their Fermi-level unpinning and electron Schottky barrier height reduction effect in two mechanisms: (1) oxygen (O) diffusion from the interlayer to the contact metal due to high reactivity of a pure metal contact with O and (2) interdiffusion between the contact metal and semiconductor through grain boundaries of the interlayer. A pure metal contact such as titanium (Ti) provides very poor thermal stability due to its high reactivity with O. A structure with a tantalum nitride (TaN) metal contact and a titanium dioxide (TiO2) interlayer exhibits moderate thermal stability up to 400 °C because TaN has much lower reactivity with O than with Ti. However, the TiO2 interlayer cannot prevent the interdiffusion process because it is easily crystallized during thermal annealing and its grain boundaries act as diffusion path. A zinc oxide (ZnO) interlayer doped with group-III elements, such as an aluminum-doped ZnO (AZO) interlayer, acts as a good diffusion barrier due to its high crystallization temperature. A TaN/AZO/n-Ge structure provides excellent thermal stability above 500 °C as it can prevent both O diffusion and interdiffusion processes; hence, it exhibits Ohmic contact properties for all thermal annealing temperatures. This work shows that, to fabricate a thermally stable and low resistive M-I-S contact structure, the metal contact should have low reactivity with O and a low work-function, and the interlayer should have a high crystallization temperature and a low conduction band offset to Ge. Furthermore, new insights are provided for designing thermally stable M-I-S contact schemes for any semiconductor material that suffers from the Fermi-level pinning problem.
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Affiliation(s)
| | | | - Tae In Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology , Daejeon 34141, Korea
| | - Byung Jin Cho
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology , Daejeon 34141, Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University , Seoul 04763, Korea
| | - Changhwan Shin
- School of Electrical and Computer Engineering, University of Seoul , Seoul 02504, Korea
| | | | - Jiyoung Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
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14
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Samanta S, Rahaman SZ, Roy A, Jana S, Chakrabarti S, Panja R, Roy S, Dutta M, Ginnaram S, Prakash A, Maikap S, Cheng HM, Tsai LN, Qiu JT, Ray SK. Understanding of multi-level resistive switching mechanism in GeO x through redox reaction in H 2O 2/sarcosine prostate cancer biomarker detection. Sci Rep 2017; 7:11240. [PMID: 28894240 PMCID: PMC5593955 DOI: 10.1038/s41598-017-11657-4] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2017] [Accepted: 08/29/2017] [Indexed: 11/09/2022] Open
Abstract
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/Ge4+ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge0/Ge4+ are confirmed by both XPS and H2O2 sensing of GeOx membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >106 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeOx layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of <7 nm after P/E of 106 cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeOx membrane by sensing 1 nM H2O2, which is owing to the change of oxidation states from Ge0 to Ge4+ because of the enhanced O2- ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 µM is also detected.
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Affiliation(s)
- Subhranu Samanta
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Sheikh Ziaur Rahaman
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
- Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu, 310, Taiwan
| | - Anisha Roy
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Surajit Jana
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Somsubhra Chakrabarti
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Rajeswar Panja
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Sourav Roy
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Mrinmoy Dutta
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Sreekanth Ginnaram
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Amit Prakash
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Siddheswar Maikap
- Thin Film Nano Tech. Lab., Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 33302, Taiwan.
- Division of Gyn-Oncology, Department of Obs/Gyn, Chang Gung Memorial Hospital (CGMH), Tao-Yuan, 33302, Taiwan.
| | - Hsin-Ming Cheng
- Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, 310, Taiwan
| | - Ling-Na Tsai
- Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, 310, Taiwan
| | - Jian-Tai Qiu
- Division of Gyn-Oncology, Department of Obs/Gyn, Chang Gung Memorial Hospital (CGMH), Tao-Yuan, 33302, Taiwan
- Department of Biomedical Sciences, School of Medicine, Chang Gung University (CGU), Tao-Yuan, 33302, Taiwan
| | - Samit K Ray
- Department of Physics, Indian Institute of Technology, Kharagpur, 721302, India
- S. N. Bose National Centre for Basic Sciences, J D Block, Sector III, Salt Lake City, Kolkata, 106, India
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15
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Ganti S, King PJ, Arac E, Dawson K, Heikkilä MJ, Quilter JH, Murdoch B, Cumpson P, O'Neill A. Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge. ACS APPLIED MATERIALS & INTERFACES 2017; 9:27357-27364. [PMID: 28783307 DOI: 10.1021/acsami.7b06595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.
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Affiliation(s)
| | - Peter J King
- Department of Chemistry, University of Helsinki , A.I Virtasen aukio 1, Helsinki FI-00560, Finland
| | | | - Karl Dawson
- Department of Mechanical, Materials and Aerospace Engineering, School of Engineering, University of Liverpool , Liverpool L69 3BX, United Kingdom
| | - Mikko J Heikkilä
- Department of Chemistry, University of Helsinki , A.I Virtasen aukio 1, Helsinki FI-00560, Finland
| | - John H Quilter
- London Low Temperature Laboratory, Royal Holloway University of London , Egham TW20 0EX, United Kingdom
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