Broad-Band Photocurrent Enhancement in MoS2 Layers Directly Grown on Light-Trapping Si Nanocone Arrays

Photoresponse characteristics of MoS2 QDs/Si nanocone heterojunctions utilizing geometry controlled light trapping mechanism in black Si

A unique light trapping mechanism associated with nano-conical textured black Si templates has been utilized to achieve improved photoresponse in MoS₂QDs/Si heterojunctions over a wide wavelength range from visible to near infrared. Black Si templates have been fabricated by a simple and cost effective metal assisted chemical etching technique followed by spin-coating of colloidal MoS₂ quantum dots (QDs) to form the heterojunction. A peak responsivity of as high as ∼1.39 A W^-1 at ∼665 nm for a bias of 5 V has been achieved. The responsivity value is higher as compared to recently published results having similar device structure. The combination of MoS₂ QDs and black Si has resulted in a broader spectral response with enhanced optical absorption in the nano-conical heterojunction devices. Finite element based optical simulation results revealed the superiority of MoS₂ QDs/Si nano-conical heterojunctions due to improved light trapping. The results appear attractive for next generation Si CMOS compatible broad band photodetectors using two dimensional semiconductors.

An indoor light-activated 3D cone-shaped MoS2 bilayer-based NO gas sensor with PPb-level detection at room-temperature

Utilization of light to boost the performance of gas sensors allows us to operate sensor devices at room temperature. Here, we, for the first time, demonstrated an indoor light-activated 3D cone-shaped MoS2 bilayer-based NO gas sensor with ppb-level detection operated at room-temperature. Large-area cone-shaped (CS)-MoS2 bilayers were grown by depositing 2 nm-thick MoO3 layers on a 2'' three-dimensional (3D) cone-patterned sapphire substrate (CPSS) followed by a sulfurization process via chemical vapor deposition. Because the exposed area of MoS2 bilayers is increased by 30%, the CS-MoS2 gas sensor (GS) demonstrated excellent performance with a response of ∼470% and a fast response time of ∼25 s after exposure to 1 ppm of NO gas illuminated by ultraviolet (UV) light with a wavelength of 365 nm. Such extraordinary performance at room temperature is attributed to the enhanced light absorption because of the light scattering effect caused by the 3D configuration and photo-desorption induced by UV illumination. For NO concentrations ranging from 2 ppm down to 0.06 ppm, the CS-MoS2 GS demonstrated a stable sensing behavior with a high response and fast response time (470% and 25 s at 2 ppm NO) because of the light absorption enhanced by the 3D structure and photo-desorption under constant UV illumination. The CS-MoS2 GS exhibits a high sensitivity (∼189.2 R% ppm-1), allowing the detection of NO gas at 0.06 ppm in 130 s. In addition, the 3D cone-shaped structure prolonged the presence of sulfur vapor around MoO3, allowing MoO3 to react with sulfur completely. Furthermore, the CS-MoS2 GS using an indoor lighting to detect NO gas at room temperature was demonstrated for the first time where the CS-MoS2 GS exhibits a stable cycling behavior with a high response (165% at 1 ppm NO) in 50 s; for concentration as low as ∼0.06 ppm, the response of ∼75% in 150 s can be achieved.

High Photoresponse in Conformally Grown Monolayer MoS2 on a Rugged Substrate

Conformal growth of atomic-thick semiconductor layers on patterned substrates can boost up the performance of electronic and optoelectronic devices remarkably. However, conformal growth is a very challenging technological task, since the control of the growth processes requires utmost precision. Herein, we report on conformal growth and characterization of monolayer MoS₂ on planar, microrugged, and nanorugged SiO₂/Si substrates via metal-organic chemical vapor deposition. The continuous and conformal nature of monolayer MoS₂ on the rugged surface was verified by high-resolution transmission electron microscopy. Strain effects were examined by photoluminescence (PL) and Raman spectroscopy. Interestingly, the photoresponsivity (∼254.5 mA/W) of as-grown MoS₂ on the nanorugged substrate was 59 times larger than that of the planar sample (4.3 mA/W) under a small applied bias of 0.1 V. This value is record high when compared with all previous MoS₂-based photocurrent generation under low or zero bias. Such enhancement in the photoresponsivity arises from a large active area for light-matter interaction and local strain for PL quenching, wherein the latter effect is the key factor and unique in the conformally grown monolayer on the nanorugged surface.

MoS2 monolayers on Si and SiO2 nanocone arrays: influences of 3D dielectric material refractive index on 2D MoS2 optical absorption

Heterostructures enable the control of transport and recombination of charge carriers, which are either injected through electrodes, or created by light illumination. Instead of full 2D-material-heterostructures in device applications, using hybrid heterostructures consisting of 2D and 3D materials is an alternative approach to take advantage of the unique physical properties of 2D materials. In addition, 3D dielectric nanostructures exhibit useful optical properties such as broadband omnidirectional antireflection effects and strongly concentrated light near the surface. In this work, the optical properties of 2D MoS2 monolayers conformally coated on 3D Si-based nanocone (NC) arrays are investigated. Numerical calculations show that the absorption in MoS2 monolayers on SiO2 NC is significantly enhanced, compared with that for MoS2 monolayers on Si NC. The weak light confinement in low refractive index SiO2 NC leads to greater absorption in the MoS2 monolayers. The measured photoluminescence and Raman intensities of the MoS2 monolayers on SiO2 NC are much greater than those on Si NC, which supports the calculation results. This work demonstrates that 2D MoS2-3D Si nano-heterostructures are promising candidates for use in high-performance integrated optoelectronic device applications.