Encapsulating Chemically Doped Graphene via Atomic Layer Deposition

MoS2 Defect Healing for High-Performance Chemical Sensing of Polycyclic Aromatic Hydrocarbons

The increasing population and industrial development are responsible for environmental pollution. Among toxic chemicals, polycyclic aromatic hydrocarbons (PAHs) are highly carcinogenic contaminants resulting from the incomplete combustion of organic materials. Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), are ideal sensory scaffolds, combining high surface-to-volume ratio with physical and chemical properties that are strongly susceptible to environmental changes. TMDCs can be integrated in field-effect transistors (FETs), which can operate as high-performance chemical detectors of (non)covalent interaction with small molecules. Here, we have developed MoS₂-based FETs as platforms for PAHs sensing, relying on the affinity of the planar polyaromatic molecules for the basal plane of MoS₂ and the structural defects in its lattice. X-ray photoelectron spectroscopy analysis, photoluminescence measurements, and transfer characteristics showed a notable reduction in the defectiveness of MoS₂ and a p-type doping upon exposure to PAHs solutions, with a magnitude determined by the correlation between the ionization energies (E_I) of the PAH and that of MoS₂. Naphthalene, endowed with the higher E_I among the studied PAHs, exhibited the highest output. We observed a log-log correlation between MoS₂ doping and naphthalene concentration in water in a wide range (10^-9-10^-6 M), as well as a reversible response to the analyte. Naphthalene concentrations as low as 0.128 ppb were detected, being below the limits imposed by health regulations for drinking water. Furthermore, our MoS₂ devices can reversibly detect vapors of naphthalene with both an electrical and optical readout, confirming that our architecture could operate as a dual sensing platform.

Nonequilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that, in addition to phonon transport, thermal resistance between nonequilibrium phonons in the 2D materials could play a critical role too when the 2D material devices are internally self-heated, either optically or electrically. We accurately measure the R of oxide/MoS₂/oxide and oxide/graphene/oxide interfaces for three oxides (SiO₂, HfO₂, and Al₂O₃) by differential time-domain thermoreflectance (TDTR). Our measurements of R across these interfaces with external heating are 2-4 times lower than the previously reported R of the similar interfaces measured by Raman thermometry with internal self-heating. Using a simple model, we show that the observed discrepancy can be explained by an additional internal thermal resistance (R_int) between nonequilibrium phonons present during Raman measurements. We subsequently estimate that, for MoS₂ and graphene, R_int ≈ 31 and 22 m² K GW^-1, respectively. The values are comparable to the thermal resistance due to finite phonon transmission across interfaces of 2D materials and thus cannot be ignored in the design of 2D material devices. Moreover, the nonequilibrium phonons also lead to a different temperature dependence than that by phonon transport. As such, our work provides important insights into physical understanding of heat dissipation in 2D material devices.

Techniques of Preparation of Thin Films: Catalytic Combustion

Over the past several decades, an increasing amount of attention has been given to catalytic combustion as an environmentally friendly process. However, major impediments to large-scale application still arise on the materials side. Here, we review catalytic combustion on thin film catalysts in view of highlighting some interesting features. Catalytic films open the way for new designs of structured catalysts and the construction of catalysts for catalytic combustion. A special place is occupied by materials in the form of very thin films that reveal catalytic activity for various chemical reactions. In this review, we demonstrate the high catalytic activity of thin film catalysts in these oxidation reactions.