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Photoelectrochemical Conversion of Sewage Water into H2 Fuel over the CuFeO2/CuO/Cu Composite Electrode. Catalysts 2023. [DOI: 10.3390/catal13030456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2023] Open
Abstract
This study describes the synthesis of delafossite, CuFeO2, as a primary photocatalytic material for hydrogen generation. A photoelectrode, CuFeO2/CuO/Cu, was prepared by combusting a Cu foil dipped in FeCl3 in ambient air. This photoelectrode showed excellent optical behavior for the hydrogen generation reaction from sewage water, producing 90 µmol/h of H2. The chemical structure was confirmed through XRD and XPS analyses, and the crystalline rhombohedral shape of CuFeO2 was confirmed using SEM and TEM analyses. With a bandgap of 1.35 ev, the prepared material displayed excellent optical properties. Electrochemical measurements for H2 gas generation were carried out using the CuFeO2/CuO/Cu photoelectrode, comparing the effect of light and dark and monochromatic wavelength light. The electrode exhibited significant enhancement in light compared to dark, with current density (Jph) values of −0.83 and −0.1 mA·cm−2, respectively. The monochromatic light also had a noticeable effect, with the Jph value increasing from −0.45 to −0.79 mA·cm−2 as the wavelength increased from 640 to 390 nm. This system is cheap and durable, making it a promising solution for hydrogen gas fuel generation in the industry.
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2
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ATO/Polyaniline/PbS Nanocomposite as Highly Efficient Photoelectrode for Hydrogen Production from Wastewater with Theoretical Study for the Water Splitting. ADSORPT SCI TECHNOL 2022. [DOI: 10.1155/2022/5628032] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Polyaniline-assisted deposition of PbS is carried out on antimony tin oxide (ATO) glass for ATO/PANI/PbS composite formation. The deposition of PbS was carried out inside and outside the polymer chains using the ionic adsorption deposition process. Various analyses were conducted to confirm the chemical structure and morphological, optical, and electrical properties of the resulting composite. TEM and SEM analyses demonstrated the spherical shape of PbS particles inside and outside the PANI network with more dark or white color, respectively. Moreover, the ImageJ program confirmed the composite formation. The XRD characterization showed the shifts in the PANI peaks after the composite formation with the appearance of a new additional peak related to PbS nanoparticles. The optical analyses were massively enhanced after the composite formation with more broadening in the Vis region at 630 nm, in which there was more enhancement in the bandgap that reached 1.5 eV. The electrode application in the H2 generation process was carried out from wastewater (sewage water, third treatment) without any additional sacrificing agent. The electrode responded well to light, where the current density (
) changed from 10-6 to 0.13 mA.cm-2 under dark and light, respectively. The electrode had high reproducibility and stability. The numbers of generated H2 moles were 0.1 mmol/cm2.h. The produced
and
were 7.3 kJ/mol and 273.4 J/mol.K, respectively. Finally, the mechanism explains the H2 generation reaction using three-electrode cell.
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Lee JJ, Jung DH, Shin DH, Lee H. Highly stable semitransparent multilayer graphene/LaVO 3vertical-heterostructure photodetectors. NANOTECHNOLOGY 2022; 33:395202. [PMID: 35617873 DOI: 10.1088/1361-6528/ac73a1] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Accepted: 05/26/2022] [Indexed: 06/15/2023]
Abstract
A heterostructure composed of a combination of semi-metallic graphene (Gr) and high-absorption LaVO3is ideal for high-performance translucent photodetector (PD) applications. Here, we present multilayer Gr/LaVO3vertical-heterostructure semitransparent PDs with various layer numbers (Ln). AtLn= 2, the PD shows the best performance with a responsivity (R) of 0.094 A W-1and a specific detectivity (D*) of 7.385 × 107cm Hz1/2W-1at 532 nm. Additionally, the average visible transmittance of the PD is 63%, i.e. it is semitransparent. We increased photocurrent (PC) by approximately 13%, from 0.564 to 0.635μA cm-2by using an Al reflector on the semitransparent PD. The PC of an unencapsulated PD maintains about 86% (from 0.571 to 0.493μA cm-2) of its initial PC value after 2000 h at 25 °C temperature/30% relative humidity, showing good stability. This behavior is superior to that of previously reported graphene-based PDs. These results show that these PDs have great potential for semitransparent optoelectronic applications.
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Affiliation(s)
- Jae Jun Lee
- Department of Applied Physics, Institute of Natural Sciences, and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Dae Ho Jung
- Department of Applied Physics, Institute of Natural Sciences, and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Dong Hee Shin
- Department of Physics, Andong National University, Andong, Gyeongbuk, 36729, Republic of Korea
| | - Hosun Lee
- Department of Applied Physics, Institute of Natural Sciences, and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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Bunch of Grape-Like Shape PANI/Ag2O/Ag Nanocomposite Photocatalyst for Hydrogen Generation from Wastewater. ADSORPT SCI TECHNOL 2022. [DOI: 10.1155/2022/4282485] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Polyaniline (PANI) and PANI/Ag2O/Ag composites I and II were prepared under different AgNO3 oxidant concentrations using the oxidative photopolymerization method. The chemical structure and optical, electrical, and morphological properties were determined for the prepared nanocomposite. The PANI/Ag2O/Ag composite II has the optimum optical properties, in which the bandgaps of PANI, composite I, and composite II are 3.02, 1.71, and 1.68 eV, respectively, with the morphology of a bunch of grape-like shapes with average particles sizes of 25 nm. Under the optimum optical properties, glass/PANI/Ag2O/Ag composite II electrode is used for hydrogen generation from sewage water. The measurements are carried out from a three-electrode cell under a xenon lamp. The effects of light wavelengths and temperature on the produced current density (
) are mentioned. Under the applied voltage (at 30°C), the current density values (
) increase from 0.003 to 0.012 mA.cm-2 in dark and light, respectively. While increasing the temperature,
values increase to 0.032 mAcm-2 at 60°C. The thermodynamic parameters are calculated, in which the activation energy (
), enthalpy (
), and entropy (
) values are 27.1 kJ·mol-1, 24.5 J mol-1, and 140.5 J K-1 mol-1, respectively. Finally, a simple mechanism for the produced hydrogen generation rate is mentioned. The prepared electrode is a very cheap (1$ for
) electrode.
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Conversion of Sewage Water into H 2 Gas Fuel Using Hexagonal Nanosheets of the Polyaniline-Assisted Deposition of PbI 2 as a Nanocomposite Photocathode with the Theoretical Qualitative Ab-Initio Calculation of the H 2O Splitting. Polymers (Basel) 2022; 14:polym14112148. [PMID: 35683821 PMCID: PMC9183036 DOI: 10.3390/polym14112148] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 05/04/2022] [Accepted: 05/12/2022] [Indexed: 02/04/2023] Open
Abstract
This study is very promising for providing a renewable enrgy (H2 gas fuel) under the elctrochemical splitting of the wastwater (sewage water). This study has double benefits: hydrogen generation and contaminations removel. This study is carried out on sewage water, third stage treated, from Beni-Suef city, Egypt. Antimony tin oxide (ATO)/polyaniline (PANI)/PbI2 photoelectrode is prepared through the in situ oxidative polymerization of PANI on ATO, then PANI is used as an assistant for PbI2 deposition using the ionic adsorption deposition method. The chemical structural, morphological, electrical, and optical properties of the composite are confirmed using different analytical tools such as X-ray diffreaction (XRD), scanning electron microscope (SEM), transmision electron microscope (TEM), Fourier-transform infrared spectroscopy (FTIR), and UV-Vis spectroscopy. The prepared PbI2 inside the composite has a crystal size of 33 nm (according to the peak at 12.8°) through the XRD analyses device. SEM and TEM confirm the hexagonal PbI2 sheets embedded on the PANI nanopores surface. Moreover, the bandgap values are enhanced very much after the composite formation, in which the bandgap values for PANI and PANI/PbI2 are 3 and 2.51 eV, respectively. The application of ATO/PANI/PbI2 nanocomposite electrode for sewage splitting and H2 generation is carried out through a three-electrode cell. The measurements carreid out using the electrocehical worksattion under th Xenon lamp (100 mW.cm−2). The produced current density (Jph) is 0.095 mA.cm−2 at 100 mW.cm−2 light illumination. The photoelectrode has high reproducibility and stability, in which and the number of H2 moles is 6 µmole.h−1.cm−1. The photoelectrode response to different monochromatic light, in which the produced Jph decreases from 0.077 to 0.072 mA.cm−2 with decreasing of the wavelengths from 390 to 636 nm, respectively. These values confirms the high response of the ATO/PANI/PbI2 nanocomposite electrode for the light illuminaton and hydrogen genration under broad light region. The thermodynamic parameters: activation energy (Ea), enthalpy (ΔH*), and entropy (ΔS*) values are 7.33 kJ/mol, −4.7 kJ/mol, and 203.3 J/mol.K, respectively. The small values of ΔS* relted to the high sesnivity of the prepared elctrode for the water splitting and then the hydrogen gneration. Finally, a theoretical study was mentioned for calculation geometry, electrochemical, and thermochemistry properties of the polyaniline/PbI2 nanocomposite as compared with that for the polyaniline.
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Gogoi K, Chattopadhyay A. Surface Engineering of Quantum Dots for Self-Powered Ultraviolet Photodetection and Information Encryption. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:2668-2676. [PMID: 35164501 DOI: 10.1021/acs.langmuir.1c03402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We demonstrate fabrication of photodetectors in the UVC and UVA regions, based on surface engineering of Mn2+-doped ZnS Qdot. Mn2+-doped ZnS Qdot exhibited UVC detection with a responsivity of 0.3 ± 0.02 A·W-1 and detectivity of 1.7 ± 0.2 1011 Jones. Following this, the Qdot was surface modified with 8-hydroxyquinoline 5-sulfonic acid ligand, which resulted in the formation of a bluish green zinc quinolate complex (Zn(QS)2) at the Qdot surface (defined as the quantum dot complex, QDC) exhibiting overall white photoluminescence. The detector developed with QDC as the photoactive material exhibited a responsivity of 0.2 ± 0.02 A·W-1 and detectivity of 1.2 ± 0.2 1011 Jones in the UVA band. This shift in the detection band from UVC in Qdot to UVA in QDC, through the surface complexation mechanism, is a new approach for tuning spectral detection featured in this work. Besides, the self-powered response of both the detectors exhibited attractive photoelectric characteristics. The detectors were incorporated in a portable prototype to show their potential application toward selective UVC and UVA spectral detection. Additionally, the dual-mode emission of the QDC was used for data encryption and decryption.
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Affiliation(s)
- Kasturi Gogoi
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
| | - Arun Chattopadhyay
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
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Hadia NMA, Abdelazeez AAA, Alzaid M, Shaban M, Mohamed SH, Hoex B, Hajjiah A, Rabia M. Converting Sewage Water into H 2 Fuel Gas Using Cu/CuO Nanoporous Photocatalytic Electrodes. MATERIALS (BASEL, SWITZERLAND) 2022; 15:1489. [PMID: 35208029 PMCID: PMC8879772 DOI: 10.3390/ma15041489] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Revised: 02/05/2022] [Accepted: 02/10/2022] [Indexed: 11/17/2022]
Abstract
This work reports on H2 fuel generation from sewage water using Cu/CuO nanoporous (NP) electrodes. This is a novel concept for converting contaminated water into H2 fuel. The preparation of Cu/CuO NP was achieved using a simple thermal combustion process of Cu metallic foil at 550 °C for 1 h. The Cu/CuO surface consists of island-like structures, with an inter-distance of 100 nm. Each island has a highly porous surface with a pore diameter of about 250 nm. X-ray diffraction (XRD) confirmed the formation of monoclinic Cu/CuO NP material with a crystallite size of 89 nm. The prepared Cu/CuO photoelectrode was applied for H2 generation from sewage water achieving an incident to photon conversion efficiency (IPCE) of 14.6%. Further, the effects of light intensity and wavelength on the photoelectrode performance were assessed. The current density (Jph) value increased from 2.17 to 4.7 mA·cm-2 upon raising the light power density from 50 to 100 mW·cm-2. Moreover, the enthalpy (ΔH*) and entropy (ΔS*) values of Cu/CuO electrode were determined as 9.519 KJ mol-1 and 180.4 JK-1·mol-1, respectively. The results obtained in the present study are very promising for solving the problem of energy in far regions by converting sewage water to H2 fuel.
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Affiliation(s)
- N. M. A. Hadia
- Physics Department, College of Science, Jouf University, Sakaka P.O. Box 2014, Saudi Arabia;
- Basic Sciences Research Unit, Jouf University, Sakaka P.O. Box 2014, Saudi Arabia
| | - Ahmed Adel A. Abdelazeez
- Nanoscale Science, University of North Carolina at Charlotte, Charlotte, NC 28223, USA;
- State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Meshal Alzaid
- Physics Department, College of Science, Jouf University, Sakaka P.O. Box 2014, Saudi Arabia;
| | - Mohamed Shaban
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (M.S.); (M.R.)
- Department of Physics, Faculty of Science, Islamic University of Madinah, Prince Naifbin Abdulaziz, Al Jamiah, Madinah 42351, Saudi Arabia;
| | - S. H. Mohamed
- Department of Physics, Faculty of Science, Islamic University of Madinah, Prince Naifbin Abdulaziz, Al Jamiah, Madinah 42351, Saudi Arabia;
- Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt
| | - Bram Hoex
- School of Photovoltaics and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia;
| | - Ali Hajjiah
- Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University, Safat 13113, Kuwait
| | - Mohamed Rabia
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (M.S.); (M.R.)
- Nanomaterials Science Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt
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8
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Chai J, Chen L, Cao B, Kong D, Chen S, Lin T, Wang W, Liu Y, Li G. High-speed graphene/InGaN heterojunction photodetectors for potential application in visible light communication. OPTICS EXPRESS 2022; 30:3903-3912. [PMID: 35209639 DOI: 10.1364/oe.450642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Accepted: 01/09/2022] [Indexed: 06/14/2023]
Abstract
Due to the wavelength-selective absorption characteristic of indium gallium nitride (InGaN) ternary alloy, the InGaN-based photodetectors (PDs) show great potential as high signal-to-noise ratio (SNR) receivers in the visible light communication (VLC) system. However, the application of InGaN-based PDs with simple structure in the VLC system is limited by slow speed. Integration of graphene (Gr) with InGaN is an effective strategy for overcoming the limitation. Herein, we report on a high responsivity and fast response PDs based on Gr/InGaN heterojunctions. It finds that the three-layer Gr (T-Gr) can effectively improve the InGaN-based PDs photoelectric properties. The T-Gr/InGaN PDs show a high responsivity of 1.39 A/W@-3 V and a short rise/fall time of 60/200 µs, which are attributed to the combination of the high-quality InGaN epitaxial films and finite density of states of three-layer graphene. The fast response with high responsivity endows the T-Gr/InGaN PDs with great potential for selective detection of the VLC system.
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Liu C, Li X, Hu T, Zhu W, Yan F, Wu T, Wang K, Zhao L. A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector. NANOSCALE 2021; 13:17512-17520. [PMID: 34652361 DOI: 10.1039/d1nr04102a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials. Here, we report the high performance of a GaN nanopillar-modified graphene/GaN/Ti/Au photodetector (PD). After etching on the surface of a GaN film, GaN nanopillars exhibit multiple functions for improving the detection performance of the PD. Under dark conditions, surface etching reduces the contact area of GaN with the graphene electrode, leading to a reduced dark current for the PD. When illuminated with UV light, the nanopillars enable an enhanced and localized electric field inside GaN, resulting in an ∼20% UV light absorption enhancement and a several-fold increased photocurrent. In addition, the nanopillars are intentionally etched beneath the metal Ti/Au electrode to modify the semiconductor-metal junction. Further investigation shows that the modified GaN/Ti/Au contact triggers a prominent rectifying I-V behaviour. Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 1017 Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.
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Affiliation(s)
- Chang Liu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Tiangui Hu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Faguang Yan
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Tiesheng Wu
- Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guangxi, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lixia Zhao
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- School of Electrical and Electronic Engineering, Tiangong University, 399 Binshuixi Road, Tianjin 300387, P. R. China.
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Almohammedi A, Shaban M, Mostafa H, Rabia M. Nanoporous TiN/TiO 2/Alumina Membrane for Photoelectrochemical Hydrogen Production from Sewage Water. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2617. [PMID: 34685061 PMCID: PMC8540468 DOI: 10.3390/nano11102617] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 09/09/2021] [Accepted: 09/14/2021] [Indexed: 11/25/2022]
Abstract
An aluminum oxide, Al2O3, template is prepared using a novel Ni imprinting method with high hexagonal pore accuracy and order. The pore diameter after the widening process is about 320 nm. TiO2 layer is deposited inside the template using atomic layer deposition (ALD) followed by the deposition of 6 nm TiN thin film over the TiO2 using a direct current (DC) sputtering unit. The prepared nanotubular TiN/TiO2/Al2O3 was fully characterized using different analytical tools such as X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), and optical UV-Vis spectroscopy. Exploring the current-voltage relationships under different light intensities, wavelengths, and temperatures was used to investigate the electrode's application before and after Au coating for H2 production from sewage water splitting without the use of any sacrificing agents. All thermodynamic parameters were determined, as well as quantum efficiency (QE) and incident photon to current conversion efficiency (IPCE). The QE was 0.25% and 0.34% at 400 mW·cm-2 for the photoelectrode before and after Au coating, respectively. Also, the activation energy was 27.22 and 18.84 kJ·mol-1, the enthalpy was 24.26 and 15.77 J·mol-1, and the entropy was 238.1 and 211.5 kJ-1·mol-1 before and after Au coating, respectively. Because of its high stability and low cost, the prepared photoelectrode may be suitable for industrial applications.
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Affiliation(s)
- Abdullah Almohammedi
- Department of Physics, Faculty of Science, Islamic University in Madinah, Al-Madinah Al-Munawarah 42351, Saudi Arabia;
| | - Mohamed Shaban
- Department of Physics, Faculty of Science, Islamic University in Madinah, Al-Madinah Al-Munawarah 42351, Saudi Arabia;
| | - Huda Mostafa
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (H.M.); (M.R.)
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (H.M.); (M.R.)
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef 62511, Egypt
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11
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Elsayed AM, Rabia M, Shaban M, Aly AH, Ahmed AM. Preparation of hexagonal nanoporous Al 2O 3/TiO 2/TiN as a novel photodetector with high efficiency. Sci Rep 2021; 11:17572. [PMID: 34475431 PMCID: PMC8413375 DOI: 10.1038/s41598-021-96200-2] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 07/27/2021] [Indexed: 02/07/2023] Open
Abstract
The unique optical properties of metal nitrides enhance many photoelectrical applications. In this work, a novel photodetector based on TiO2/TiN nanotubes was deposited on a porous aluminum oxide template (PAOT) for light power intensity and wavelength detection. The PAOT was fabricated by the Ni-imprinting technique through a two-step anodization method. The TiO2/TiN layers were deposited by using atomic layer deposition and magnetron sputtering, respectively. The PAOT and PAOT/TiO2/TiN were characterized by several techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray (EDX). The PAOT has high-ordered hexagonal nanopores with dimensions ~ 320 nm pore diameter and ~ 61 nm interpore distance. The bandgap of PAOT/TiO2 decreased from 3.1 to 2.2 eV with enhancing absorption of visible light after deposition of TiN on the PAOT/TiO2. The PAOT/TiO2/TiN as photodetector has a responsivity (R) and detectivity (D) of 450 mAW-1 and 8.0 × 1012 Jones, respectively. Moreover, the external quantum efficiency (EQE) was 9.64% at 62.5 mW.cm-2 and 400 nm. Hence, the fabricated photodetector (PD) has a very high photoelectrical response due to hot electrons from the TiN layer, which makes it very hopeful as a broadband photodetector.
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Affiliation(s)
- Asmaa M Elsayed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Shaban
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Department of Physics, Faculty of Science, Islamic University of Madinah, P. O. Box: 170, Al Madinah Almonawara, 42351, Saudi Arabia
| | - Arafa H Aly
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt.
| | - Ashour M Ahmed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
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12
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Lee JH, Chang WJ, Choi WY, Park JM, Jang JI, Park WI. Direct nanofluidic channels via hardening and wrinkling of thin polymer films. NANOSCALE 2020; 12:16895-16900. [PMID: 32766647 DOI: 10.1039/d0nr04032k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this study, we propose a rational route to create wrinkling patterns with individually controllable location and direction in thin polymer films. Optical and atomic force microscopy analysis confirmed the formation of straight wrinkles with a typical width of 1.51 to 1.55 μm and a height of 60 to 65 nm. Confocal fluorescence microscopy revealed that each wrinkle produces a continuous hollow channel that interconnects neighboring holes in the polymer film, demonstrating potential applications as nanoscale fluidic channel and reactor. Moreover, we propose a mechanism that considers the elastic deformation energy and interface energies as crucial parameters that govern the mechanical instabilities, which provides scaling relationships between the height, width, and thickness of the wrinkles. This offers additional opportunities for control over the size and aspect ratio of the wrinkles and channels.
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Affiliation(s)
- Jae Hyung Lee
- Division of Materials Science and Engineering Hanyang University, Seoul 04763, Republic of Korea.
| | - Won Jun Chang
- Division of Materials Science and Engineering Hanyang University, Seoul 04763, Republic of Korea.
| | - Won Young Choi
- Division of Materials Science and Engineering Hanyang University, Seoul 04763, Republic of Korea.
| | - Jeong-Min Park
- Division of Materials Science and Engineering Hanyang University, Seoul 04763, Republic of Korea.
| | - Jae-Il Jang
- Division of Materials Science and Engineering Hanyang University, Seoul 04763, Republic of Korea.
| | - Won Il Park
- Division of Materials Science and Engineering Hanyang University, Seoul 04763, Republic of Korea.
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Kunwar S, Pandit S, Jeong JH, Lee J. Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance. NANO-MICRO LETTERS 2020; 12:91. [PMID: 34138096 PMCID: PMC7770873 DOI: 10.1007/s40820-020-00437-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2020] [Accepted: 03/25/2020] [Indexed: 05/03/2023]
Abstract
Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W-1, detectivity of 2.4 × 1012 Jones and external quantum efficiency of 3.6 × 104% with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.
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Affiliation(s)
- Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sanchaya Pandit
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Jae-Hun Jeong
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea.
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14
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Sun Y, Song W, Gao F, Wang X, Luo X, Guo J, Zhang B, Shi J, Cheng C, Liu Q, Li S. In Situ Conformal Coating of Polyaniline on GaN Microwires for Ultrafast, Self-Driven Heterojunction Ultraviolet Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13473-13480. [PMID: 32072809 DOI: 10.1021/acsami.9b21796] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Independent and zero-maintenance systems would be in urgent need in the near future internet of things. Here, we present high-performance, self-driven organic/inorganic heterojunction ultraviolet (UV) photodetectors (PDs) by in situ polymerization of polyaniline (PANI) on Gallium nitride microwires. The GaN microwires with a high crystalline quality are grown on patterned Si substrates by metal organic chemical vapor deposition. Using a facile in situ chemical polymerization method, PANI is conformally coated on the surface of GaN microwires. The constructed GaN/PANI hybrid microwire PD exhibits a high responsivity of 178 mA/W, a remarkable detectivity of 4.67 × 1014 jones, and an ultrafast UV photoresponse speed (rise time of 0.2 ms and fall time of 0.3 ms) under zero bias. The intimate heterojunction in the form of N-Ga-N bonds between GaN and PANI may account for the observed high performances. The presented self-driven microwire UV PDs featuring ultrahigh-speed (sub-millisecond) response to UV light may find applications in future nano/micro-photosensor networks.
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Affiliation(s)
- Yiming Sun
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Weidong Song
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
- College of Applied Physics and Materials, Wuyi University, 22 Dongcheng Village, Jiangmen, Guangdong 529020, People's Republic of China
| | - Fangliang Gao
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Xingfu Wang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Xingjun Luo
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Jiaqi Guo
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Bolin Zhang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Jiang Shi
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Chuan Cheng
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Qing Liu
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
| | - Shuti Li
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, People's Republic of China
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15
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Li J, Xi X, Lin S, Ma Z, Li X, Zhao L. Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11965-11971. [PMID: 32072811 DOI: 10.1021/acsami.9b22651] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of graphene with three-dimensional semiconductors can introduce unique optical and electrical properties that overcome the intrinsic limitation of the materials. Here, we report on the high sensitivity ultraviolet (UV) photodetectors based on monolayer graphene/nanoporous GaN heterojunctions. By investigating the reflectivity, photoluminescence, and Raman spectral characteristics of nanoporous GaN, we find that the increase in the porosity can help to improve its optical properties. The device based on the highest-porosity nanoporous GaN demonstrates rapid and linear response to UV photons, with an ultrahigh detectivity of 1.0 × 1017 Jones and a UV-visible rejection ratio of 4.8 × 107 at V = -1.5 V. We attribute such high sensitivity to the combination of the significantly enhanced light harvesting of high-porosity nanoporous GaN and the unique UV absorption, high mobility, and finite density of states of the monolayer graphene. The high performance together with a simple and low-cost fabrication process endow these graphene/nanoporous GaN heterojunctions with great potential for future selective detection of weak UV optical signals.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xin Xi
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Shan Lin
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhanhong Ma
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Lixia Zhao
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
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16
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Han S, Choi I, Lee CR, Jeong KU, Lee SK, Kim JS. Fast Response Characteristics of Flexible Ultraviolet Photosensors with GaN Nanowires and Graphene. ACS APPLIED MATERIALS & INTERFACES 2020; 12:970-979. [PMID: 31840489 DOI: 10.1021/acsami.9b13109] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report the fast response characteristics of flexible ultraviolet photosensors with GaN nanowires (NWs) and a graphene channel. The GaN NWs used as light-absorbing media are horizontally and randomly embedded in a graphene sandwich structure in which the number of bottom graphene layers is varied from zero to three and the top is a fixed single layer of graphene. In the response curve of the photosensor with a double-layer bottom graphene, as obtained under pulsed illumination with a pulse width of 50 ms and a duty cycle of 50%, the rise and decay times were measured as 24.1 ± 0.1 and 28.2 ± 0.1 ms, respectively. The eye-crossing percentage was evaluated as 52.1%, indicating no substantial distortion of the duty cycle and no pulse symmetry problem. The rise and decay times estimated from an equivalent circuit analysis represented by resistances and capacitances agree well with the measured values. When the device was under the bending condition, the rise and decay times of the photosensor were comparable to those in the unbent state.
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Affiliation(s)
| | | | | | | | - Seoung-Ki Lee
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
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17
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Xiao Y, Zhang WG, Tan ZT, Pan GB, Peng Z. High switch ratio, self-powered ultraviolet photodetector based on a ZnOEP/GaN p-n heterojunction with porous structure on GaN. Chem Phys Lett 2020. [DOI: 10.1016/j.cplett.2019.136981] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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18
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Xiao Y, Liu L, Ma ZH, Meng B, Qin SJ, Pan GB. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction. NANOMATERIALS 2019; 9:nano9091198. [PMID: 31454935 PMCID: PMC6780170 DOI: 10.3390/nano9091198] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2019] [Revised: 08/21/2019] [Accepted: 08/21/2019] [Indexed: 11/16/2022]
Abstract
Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm−2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.
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Affiliation(s)
- Yan Xiao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lin Liu
- Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
- Department of Health and Environmental Sciences, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Zhi-Hao Ma
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Bo Meng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Su-Jie Qin
- Department of Health and Environmental Sciences, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
| | - Ge-Bo Pan
- Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China.
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