High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono-, Bi-, and Trilayer Molybdenum Disulfide with Superior Transport Properties

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

Methanol carbonylation to acetaldehyde on Au particles supported by single-layer MoS2grown on silica

Homogenous single-layer MoS₂films coated with sub-single layer amounts of gold are found to isolate the reaction of methanol with carbon monoxide, the fundamental step toward higher alcohols, from an array of possible surface reactions. Active surfaces were prepared from homogenous single-layer MoS₂films coated with sub-single layer amounts of gold. These gold atoms formed clusters on the MoS₂surface. A gas mixture of carbon monoxide (CO) and methanol (CH₃OH) was partially converted to acetaldehyde (CH₃CHO) under mild process conditions (308 kPa and 393 K). This carbonylation of methanol to a C₂species is a critical step toward the formation of higher alcohols. Density functional theory modeling of critical steps of the catalytic process identify a viable reaction pathway. Imaging and spectroscopic methods revealed that the single layer of MoS₂facilitated formation of nanoscale gold islands, which appear to sinter through Ostwald ripening. The formation of acetaldehyde by the catalytic carbonylation of methanol over supported gold clusters is an important step toward realizing controlled production of useful molecules from low carbon-count precursors.

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Low turn-on (knee) voltage (∼0.3 V) Schottky-diode behavior of a four-layer (4L) MoS₂/GaN junction is achieved by optimizing the in situ interface preparation of the GaN substrate prior to MoS₂ overlayer growth in a vacuum system using metallic molybdenum and hydrogen sulfide gas as precursors. The process leads to a clean nitrogen-terminated GaN surface that bonds well to the MoS₂ film revealing a 2 × 2 reconstruction at the interface observed in low-energy electron diffraction (LEED). Atomic force microscopy and X-ray photoelectron spectroscopy provide clear images of the GaN terraces through the MoS₂ overlayer confirming close adhesion and absence of oxygen and other contaminants. Density functional theory calculations predict the formation of the 2 × 2 superstructure at a clean interface. Transport measurements show diode behavior at an on/off ratio of ∼10⁵ for ±1 V with a forward direction for the positive voltage applied to the MoS₂ layer. Combining transport and photoelectron spectroscopy measurements with theory, we deduce a Fermi-level position in the MoS₂ gap consistent with interface charge transfer from MoS₂ to the substrate. The high performance of the MoS₂/Gan diode highlights the technological potential of devices based on GaN/MoS₂ interfaces.

A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications

Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.

Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films

Though the positive role of alkali halides in realizing large area growth of transition metal dichalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS₂morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS₂. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS₂film growth assisted by NaCl results in ≈81% of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS₂monolayers. No evidence of alkali or halogen atoms were found in the composition analysis of the films. On the basis of Raman spectroscopy and photoluminescence measurements, the MoS₂films were found to be of good crystalline quality.