Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories

High-performance elastic ferroelectrics via low-temperature carbene crosslinking and high-temperature annealing

With the increasing demand for wearable electronics, elastic ferroelectrics with high polarization intensity and Curie temperature have become essential. However, balancing high ferroelectric performance with elasticity in polymeric ferroelectrics remains a challenge, as higher crosslinking density to improve elasticity often compromises Curie temperature and remnant polarization. To address this trade-off, we introduce unsaturated bonds into commercial P(VDF-TrFE), forming P(VDF-TrFE-DB) with enhanced crosslinking reactivity while retaining its inherent ferroelectric properties. A novel two-step LT-HT processing strategy is developed to achieve this balance. The low-temperature (LT) step leverages carbene-mediated crosslinking with diazirine-based crosslinkers below the polymer's Curie temperature, preventing premature crystallization and forming amorphous regions essential for mechanical flexibility. The high-temperature (HT) annealing step promotes the formation and alignment of well-ordered ferroelectric crystalline structures, optimizing remnant polarization and Curie temperature while preserving the crosslinked amorphous regions critical for elasticity. This approach enables high elasticity with minimal crosslinker content while maintaining excellent ferroelectric performance. The resulting elastic P(VDF-TrFE-DB) polymer exhibits a significantly elevated Curie temperature (∼140 °C) and high remnant polarization (7.63 μC cm-2), comparable to commercial P(VDF-TrFE). This method offers a versatile pathway for advanced flexible electronics, soft actuators, and wearable devices requiring robust mechanical and ferroelectric properties.

Recent Advances in Ferroelectric Materials-Based Photoelectrochemical Reaction

Inorganic perovskite ferroelectric-based nanomaterials as sustainable new energy materials, due to their intrinsic ferroelectricity and environmental compatibility, are intended to play a crucial role in photoelectrochemical field as major functional materials. Because of versatile physical properties and excellent optoelectronic properties, ferroelectric-based nanomaterials attract much attention in the field of photocatalysis, photoelectrochemical water splitting and photovoltaic. The aim of this review is to cover the recent advances by stating the different kinds of ferroelectrics separately in the photoelectrochemical field as well as discussing how ferroelectric polarization will impact functioning of photo-induced carrier separation and transportation in the interface of the compounded semiconductors. In addition, the future prospects of ferroelectric-based nanomaterials are also discussed.

Photochromic and Electric Field-Regulating Luminescence in High-Transparent (K,Na)NbO3-Based Ferroelectric Ceramics with Two-Phase Coexistence

Rare earth Tb³⁺ doped (K_0.465Na_0.465Li_0.07)(Nb_0.93Bi_0.07)O₃ (KNNLB-x%Tb) lead-free transparent ferroelectric ceramics were designed and prepared. The effects of Tb³⁺ on phase structure, microstructure, optical transmittance, photoluminescence, and photochromic behaviors were studied. Although two ferroelectric phases coexist, the optical transmittance can reach the high value of 74% in the visible light region because of the fine grains, dense ceramic microstructure, large optical energy band gap, and relatively high symmetry of coexisting ferroelectric phases. In addition, Tb³⁺ works as a luminescent center, and the reversible photochromic modulation is achieved by alternate stimulation of illumination and heat treatment. Meanwhile, the luminescence contrast can be improved under in situ electric field stimulation due to the easy change of lattice symmetry in coexisting ferroelectric phases. The generation of color centers after illumination and the local crystal field around the luminescent center caused by in situ electric field contributes to above phenomena. These ceramics exhibit the great potential in optical data storage and anticounterfeiting.

Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision

Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET). The FE-PS-NET, constituted by ferroelectric photosensors (FE-PSs) with tunable photoresponsivities, is capable of simultaneously capturing and processing images. In each FE-PS, self-powered photovoltaic responses, modulated by remanent polarization of an epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 layer, show not only multiple nonvolatile levels but also sign reversibility, enabling the representation of a signed weight in a single device and hence reducing the hardware overhead for network construction. With multiple FE-PSs wired together, the FE-PS-NET acts on its own as an artificial neural network. In situ multiply-accumulate operation between an input image and a stored photoresponsivity matrix is demonstrated in the FE-PS-NET. Moreover, the FE-PS-NET is faultlessly competent for real-time image processing functionalities, including binary classification between 'X' and 'T' patterns with 100% accuracy and edge detection for an arrow sign with an F-Measure of 1 (under 365 nm ultraviolet light). This study highlights the great potential of ferroelectric photovoltaics as the hardware basis of real-time machine vision.

Nanostructured perovskites for nonvolatile memory devices

Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

All-Inorganic Flexible (K, Na)NbO3-Based Lead-Free Piezoelectric Thin Films Spin-Coated on Metallic Foils

Flexible piezoelectric thin films are raising interest in energy harvesting and wearable electronics, although their direct fabrication is challenging in the selection of substrates and thermal processing. In this work, we developed direct fabrication of flexible lead-free (K, Na)NbO₃ (KNN)-based piezoelectric films on commercially available metallic foils by sol-gel processing. Stainless steel and platinum foils are selected as flexible substrates because of their good thermal stability, robust flexibility, and cost-efficiency. The sol-gel-processed KNN-based thin films on both of the metallic foils show good flexibility, with the bending radii reaching ±3 mm. The flexible thin films grown on stainless steel and platinum foils present high breakdown electric fields that reach 1760 and 2530 kV/cm, respectively, resulting from the fine-grained dense structure, limited leakage current density, and suppressed mobility of charged carriers. Improved effective piezoelectric coefficient d_33, eff* (75.4 pm/V) with a slight decrease after bending was obtained in the flexible thin films on Pt when compared to their rigid counterparts. The flexible lead-free piezoelectric thin films with combined high breakdown electric fields and piezoelectric and energy storage properties may pave the way for integrating KNN-based multifunctional thin films into flexible electronics.

Exploring a Fatigue-Free Layered Hybrid Perovskite Ferroelectric for Photovoltaic Non-Volatile Memories

Through a functional unit-transmutation strategy, a fatigue-free layered hybrid perovskite ferroelectric (C₆ H₅ CH₂ NH₃ )₂ CsPb₂ Br₇ (BCPB) has been developed, which demonstrates stable spontaneous polarization (P_s ) of 6.5 μC cm^-2 and high Curie temperature up to 425 K. Meanwhile, BCPB shows splendid bulk photovoltaic effect (BPVE) properties with noticeable zero-bias photocurrent density (5 μA cm^-2 ), and high on/off switching ratio of current (over 3×10⁵ ); these merits even overmatch the most known ferroelectric semiconductor BiFeO₃ . The unique structure with self-regulated net electrical charged layers gives rise to the fatigue-free feature of P_s and BPVE (no significant fatigue after 10⁸ polarity switching cycles), promoting the potential applications of BCPB in photovoltaic non-volatile memories. This work offers an efficient approach for exploring fatigue-free semiconducting ferroelectrics as well as excavates their further applications in next-generation electronic devices.

High-contrast photochromic Eu-doped K0.5Na0.5NbO3 ceramics with prominent pellucidity

The Eu-doped K_0.5Na_0.5NbO₃ pellucid ceramics were first prepared via a conventional solid-state reaction, and they exhibited light illumination-induced high-contrast photochromism of both optical transmittance and photoluminescence behaviors. Through thermal treatment, the optical performances could return to their initial states and displayed excellent reversibility. Eu³⁺ ions were selected as the luminescent activator for detecting the local environment of the K_0.5Na_0.5NbO₃ host. Meanwhile, the effects of the amount of Eu³⁺ present on phase structures, microstructures, optical transmittance and photoluminescence intensities were systematically investigated. The results suggest that Eu-doped K_0.5Na_0.5NbO₃ transparent ceramics possess multifunctionality including photochromism, photoluminescence and optical switching properties, and that they exhibit promising potential for non-destructive optical data storage application.

van der Waals oxide heteroepitaxy for soft transparent electronics

The quest for multifunctional, low-power and environment friendly electronics has brought research on materials to the forefront. For instance, as the emerging field of transparent flexible electronics is set to greatly impact our daily lives, more stringent requirements are being imposed on functional materials. Inherently flexible polymers and metal foil templates have yielded limited success due to their incompatible high-temperature growth and non-transparency, respectively. Although the epitaxial-transfer strategy has shown promising results, it suffers from tedious and complicated lift-off-transfer processes. The advent of graphene, in particular, and 2D layered materials, in general, with ultrathin scalability has revolutionized this field. Herein, we review the direct growth of epitaxial functional oxides on flexible transparent mica substrates via van der Waals heteroepitaxy, which mitigates misfit strain and substrate clamping for soft transparent electronics applications. Recent advances in practical applications of flexible and transparent electronic elements are discussed. Finally, several important directions, challenges and perspectives for commercialization are also outlined. We anticipate that this promising strategy to build transparent flexible optoelectronic devices and improve their performance will open up new avenues for researchers to explore.