Influence of the Substrate on the Optical and Photo-electrochemical Properties of Monolayer MoS2

Optimized plasmonic enhancement and deformation reduction in MoS2 monolayers using Au-nanowire-embedded polymers

Hybrid systems consisting of transition metal dichalcogenide (TMD) layers and metal nanostructures offer promising opportunities to control excitonic behaviors and enhance light-matter interaction in TMDs. This work introduces an unprecedented approach to integrate exfoliated MoS2 monolayers with gold nanowire (AuNW)-embedded PDMS films. Localized surface plasmon excitation in AuNWs boosts light scattering, as evidenced by optical characterization and numerical simulations. Notably, MoS2 monolayers on AuNW-embedded PDMS films exhibit a five-fold increase in photoluminescence intensity compared to those on non-embedded AuNW/PDMS substrates. This enhancement arises from the extended and intensified electric fields resulting from the substantial dielectric permittivity contrast between PDMS and air. Furthermore, embedding AuNWs effectively mitigates mechanical deformation of MoS2 monolayers, suppressing strain-induced dissociation of photo-generated excitons. These findings demonstrate the potential of AuNW-embedded polymers for advanced TMD-based plasmonic device applications.

Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors

In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

Comprehensive study of Raman optical response of typical substrates for thin-film growth under 633 nm and 785 nm laser excitation

Raman spectroscopy is one of the most efficient and non-destructive techniques for characterizing materials. However, it is challenging to analyze thin films using Raman spectroscopy since the substrates beneath the thin film often obscure its optical response. Here, we evaluate the suitability of fourteen commonly employed single-crystal substrates for Raman spectroscopy of thin films using 633 nm and 785 nm laser excitation systems. We determine the optimal wavenumber ranges for thin-film characterization by identifying the most prominent Raman peaks and their relative intensities for each substrate and across substrates. In addition, we compare the intensity of background signals across substrates, which is essential for establishing their applicability for Raman detection in thin films. The substrates LaAlO3 and Al2O3 have the largest free spectral range for both laser systems, while Al2O3 has the lowest background levels, according to our findings. In contrast, the substrates SrTiO3 and Nb:SrTiO3 have the narrowest free spectral range, while GdScO3, NGO and MgO have the highest background levels, making them unsuitable for optical investigations.

One-Step Synthesis of Transition Metal Dichalcogenide Quantum Dots Using Only Alcohol Solvents for Indoor-Light Photocatalytic Antibacterial Activity

In this study, we report a one-step direct synthesis of molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂) quantum dots (QDs) through a solvothermal reaction using only alcohol solvents and efficient Escherichia coli (E. coli) decompositions as photocatalytic antibacterial agents under visible light irradiation. The solvothermal reaction gives the scission of molybdenum-sulfur (Mo-S) and tungsten-sulfur (W-S) bonding during the synthesis of MoS₂ and WS₂ QDs. Using only alcohol solvent does not require a residue purification process necessary for metal intercalation. As the number of the CH₃ groups of alcohol solvents among ethyl, isopropyl, and tert(t)-butyl alcohols increases, the dispersibility of MoS₂/WS₂ increases. The CH₃ groups of alcohols minimize the surface energy, leading to the effective exfoliation and disintegration of the bulk under heat and pressure. The bulky t-butyl alcohol with the highest number of methyl groups shows the highest exfoliation and yield. MoS₂ QDs with a lateral size of about 2.5 nm and WS₂ QDs of about 10 nm are prepared, exhibiting a strong blue luminescence under 365 nm ultraviolet (UV) light irradiation. Their heights are 0.68-3 and 0.72-5 nm, corresponding to a few layers of MoS₂ and WS₂, respectively. They offer a highly efficient performance in sterilizing E. coli as the visible-light-driven photocatalyst.

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS₂. The strain and interface engineering of MoS₂/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS₂ on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS₂, the relative numerical changes of physical parameters of MoS₂ films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.

Tip-Mediated Bandgap Tuning for Monolayer Transition Metal Dichalcogenides

Monolayer transition metal dichalcogenides offer an appropriate platform for developing advanced electronics beyond graphene. Similar to two-dimensional molecular frameworks, the electronic properties of such monolayers can be sensitive to perturbations from the surroundings; the implied tunability of electronic structure is of great interest. Using scanning tunneling microscopy/spectroscopy, we demonstrated a bandgap engineering technique in two monolayer materials, MoS₂ and PtTe₂, with the tunneling current as a control parameter. The bandgap of monolayer MoS₂ decreases logarithmically by the increasing tunneling current, indicating an electric-field-induced gap renormalization effect. Monolayer PtTe₂, by contrast, exhibits a much stronger gap reduction, and a reversible semiconductor-to-metal transition occurs at a moderate tunneling current. This unusual switching behavior of monolayer PtTe₂, not seen in bulk semimetallic PtTe₂, can be attributed to its surface electronic structure that can readily couple to the tunneling tip, as demonstrated by theoretical calculations.

Efficient Optical Modulation of Exciton State Population in Monolayer MoS2 at Room Temperature

The modulation of exciton energy and state density of layer-structured transition metal dichalcogenides (TMDs) is required for diverse optoelectronic device applications. Here, the spontaneous inversion of exciton state population in monolayer MoS₂ is observed by turning the pump light power. The excitons prefer to exist in low energy state under low pump power, but reverse under high pump power. To discuss the mechanism in depth, we propose a semiclassical model by combining the rate equation and photo-exciton interaction. Considering the modifying of exciton-exciton annihilation, the spontaneous inversion of exciton state population is phenomenologically described.

Exploring the Role of 2D-Graphdiyne as a Charge Carrier Layer in Field-Effect Transistors for Non-Covalent Biological Immobilization against Human Diseases

Graphdiyne's (GDY's) outstanding features have made it a novel 2D nanomaterial and a great candidate for electronic gadgets and optoelectronic devices, and it has opened new opportunities for the development of highly sensitive electronic and optical detection methods as well. Here, we testified a non-covalent grafting strategy in which GDY serves as a charge carrier layer and a bioaffinity substrate to immobilize biological receptors on GDY-based field-effect transistor (FET) devices. Firm non-covalent anchoring of biological molecules via pyrene groups and electrostatic interactions in addition to preserved electrical properties of GDY endows it with features of an ultrasensitive and stable detection mechanism. With emerging new forms and extending the subtypes of the already existing fatal diseases, genetic and biological knowledge demands more details. In this regard, we constructed simple yet efficient platforms using GDY-based FET devices in order to detect different kinds of biological molecules that threaten human health. The resulted data showed that the proposed non-covalent bioaffinity assays in GDY-based FET devices could be considered reliable strategies for novel label-free biosensing platforms, which still reach a high on/off ratio of over 10⁴. The limits of detection of the FET devices to detect DNA strands, the CA19-9 antigen, microRNA-155, the CA15-3 antigen, and the COVID-19 antigen were 0.2 aM, 0.04 pU mL^-1, 0.11 aM, 0.043 pU mL^-1, and 0.003 fg mL^-1, respectively, in the linear ranges of 1 aM to 1 pM, 1 pU mL^-1 to 0.1 μU mL^-1, 1 aM to 1 pM, 1 pU mL^-1 to 10 μU mL^-1, and 1 fg mL^-1 to 10 ng mL^-1, respectively. Finally, the extraordinary performance of these label-free FET biosensors with low detection limits, high sensitivity and selectivity, capable of being miniaturized, and implantability for in vivo analysis makes them a great candidate in disease diagnostics and point-of-care testing.

Resonance Photoluminescence Enhancement of Monolayer MoS2 via a Plasmonic Nanowire Dimer Optical Antenna

Two-dimensional transition-metal dichalcogenides (TMDs) such as monolayer MoS2 exhibit remarkable optical properties. However, the intrinsic absorption and emission rates of MoS2 are very low, thus severely hindering its application in electronics and photonics. Combining MoS2 with a plasmonic optical antenna is an alternative solution to enhance the emission rates of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector. Herein, we have constructed a plasmonic gap cavity of a nanowire dimer (NWD) system as an optical antenna to brighten the emission of MoS2 off the hot spot. Different from the conventional enhancement concept which occurred in the plasmonic hot spot, the light emission off the nanogap hot spot was thoroughly investigated. We demonstrate that this new plasmonic optical nanostructure leads to a strong enhancement due to the Purcell effect. The NWD optical antenna can trap light to the near field through a high-efficiency plasmonic gap mode (PGM); then the PL emission was enhanced drastically up to 14.5-fold due to the resonance of the plasmonic gap mode (PGM) in the NWD with the excitonic band of monolayer MoS2. Theoretical simulations reveal that this NWD can alter the efficiency of convergence and excitation, which was consistent with our experimental results. This study can provide a pathway toward enhancing and controlling PGM-enhanced light emission of TMD materials beyond the plasmonic hot spot.

Directly visualizing carrier transport and recombination at individual defects within 2D semiconductors

Two-dimensional semiconductors (2DSCs) are promising materials for a wide range of optoelectronic applications. While the fabrication of 2DSCs with thicknesses down to the monolayer limit has been demonstrated through a variety of routes, a robust understanding of carrier transport within these materials is needed to guide the rational design of improved practical devices. In particular, the influence of different types of structural defects on transport is critical, but difficult to interrogate experimentally. Here, a new approach to visualizing carrier transport within 2DSCs, Carrier Generation-Tip Collection Scanning Electrochemical Cell Microscopy (CG-TC SECCM), is described which is capable of providing information at the single-defect level. In this approach, carriers are locally generated within a material using a focused light source and detected as they drive photoelectrochemical reactions at a spatially-offset electrolyte interface created through contact with a pipet-based probe, allowing carrier transport across well-defined, µm-scale paths within a material to be directly interrogated. The efficacy of this approach is demonstrated through studies of minority carrier transport within mechanically-exfoliated n-type WSe2 nanosheets. CG-TC SECCM imaging experiments carried out within pristine basal planes revealed highly anisotropic hole transport, with in-plane and out-of-plane hole diffusion lengths of 2.8 µm and 5.8 nm, respectively. Experiments were also carried out to probe recombination across individual step edge defects within n-WSe2 which suggest a significant surface charge (∼5 mC m-2) exists at these defects, significantly influencing carrier transport. Together, these studies demonstrate a powerful new approach to visualizing carrier transport and recombination within 2DSCs, down to the single-defect level.