Visualizing Buried Local Carrier Diffusion in Halide Perovskite Crystals via Two-Photon Microscopy

Quantifying noise effects in optical measures of excited state transport

Time-resolved microscopy is a widely used approach for imaging and quantifying charge and energy transport in functional materials. While it is generally recognized that resolving small diffusion lengths is limited by measurement noise, the impacts of noise have not been systematically assessed or quantified. This article reports modeling efforts to elucidate the impact of noise on optical probes of transport. Excited state population distributions, modeled as Gaussians with additive white noise typical of experimental conditions, are subject to decay and diffusive evolution. Using a conventional composite least-squares fitting algorithm, the resulting diffusion constant estimates are compared with the model input parameter. The results show that heteroscedasticity (i.e., time-varying noise levels), insufficient spatial and/or temporal resolution, and small diffusion lengths relative to the magnitude of noise lead to a surprising degree of imprecision under moderate experimental parameters. Moreover, the compounding influence of low initial contrast and small diffusion length leads to systematic overestimation of diffusion coefficients. Each of these issues is quantitatively analyzed herein, and experimental approaches to mitigate them are proposed. General guidelines for experimentalists to rapidly assess measurement precision are provided, as is an open-source tool for customizable evaluation of noise effects on time-resolved microscopy transport measurements.

Probing compositional engineering effects on lead-free perovskite-inspired nanocrystal thin films using correlative nonlinear optical microscopy

We introduce the use of correlative third-harmonic generation and multiphoton-induced luminescence microscopy to investigate the impact of manganese (Mn) doping on bismuth (Bi)-based perovskite-inspired nanocrystal thin films. The technique was found to be extremely sensitive to the microscopic features of the perovskite film and its structural compositions, allowing the unambiguous detection of compositionally different emitters in the perovskite film and manipulation of their nonlinear optical responses. Our work unveils a new way to investigate, manipulate, and exploit perovskite-inspired functional materials for nonlinear optical conversion at the nanoscale.

Carriers, Quasi-particles, and Collective Excitations in Halide Perovskites

Halide perovskites (HPs) are potential game-changing materials for a broad spectrum of optoelectronic applications ranging from photovoltaics, light-emitting devices, lasers to radiation detectors, ferroelectrics, thermoelectrics, etc. Underpinning this spectacular expansion is their fascinating photophysics involving a complex interplay of carrier, lattice, and quasi-particle interactions spanning several temporal orders that give rise to their remarkable optical and electronic properties. Herein, we critically examine and distill their dynamical behavior, collective interactions, and underlying mechanisms in conjunction with the experimental approaches. This review aims to provide a unified photophysical picture fundamental to understanding the outstanding light-harvesting and light-emitting properties of HPs. The hotbed of carrier and quasi-particle interactions uncovered in HPs underscores the critical role of ultrafast spectroscopy and fundamental photophysics studies in advancing perovskite optoelectronics.

Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriers

Fast diffusion of charge carriers is crucial for efficient charge collection in perovskite solar cells. While lateral transient photoluminescence microscopies have been popularly used to characterize charge diffusion in perovskites, there exists a discrepancy between low diffusion coefficients measured and near-unity charge collection efficiencies achieved in practical solar cells. Here, we reveal hidden microscopic dynamics in halide perovskites through four-dimensional (directions x, y and z and time t) tracking of charge carriers by characterizing out-of-plane diffusion of charge carriers. By combining this approach with confocal microscopy, we discover a strong local heterogeneity of vertical charge diffusivities in a three-dimensional perovskite film, arising from the difference between intragrain and intergrain diffusion. We visualize that most charge carriers are efficiently transported through the direct intragrain pathways or via indirect detours through nearby areas with fast diffusion. The observed anisotropy and heterogeneity of charge carrier diffusion in perovskites rationalize their high performance as shown in real devices. Our work also foresees that further control of polycrystal growth will enable solar cells with micrometres-thick perovskites to achieve both long optical path length and efficient charge collection simultaneously.

High grain boundary recombination velocity in polycrystalline metal halide perovskites

Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (S_GB) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average S_GB reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average S_GB by four times, with the lowest S_GB of 410 cm/s, which is comparable to surface recombination velocities after passivation.

Nanoscale-Resolved Surface-to-Bulk Electron Transport in CsPbBr3 Perovskite

Describing the nanoscale charge carrier transport at surfaces and interfaces is fundamental for designing high-performance optoelectronic devices. To achieve this, we employ time- and angle-resolved photoelectron spectroscopy with ultraviolet pump and extreme ultraviolet probe pulses. The resulting high surface sensitivity reveals an ultrafast carrier population decay associated with surface-to-bulk transport, which was tracked with a sub-nanometer spatial resolution normal to the surface, and on a femtosecond time scale, in the case of the inorganic CsPbBr₃ lead halide perovskite. The decay time exhibits a pronounced carrier density dependence, which is attributed via modeling to enhanced diffusive transport and concurrent recombination. The transport is found to approach an ordinary diffusive regime, limited by electron-hole scattering, at the highest excitation fluences. This approach constitutes an important milestone in our capability to probe hot-carrier transport at solid interfaces with sub-nanometer resolution in a theoretically and experimentally challenging, yet technologically relevant, high-carrier-density regime.

Probing Longitudinal Carrier Transport in Perovskite Thin Films via Modified Transient Reflection Spectroscopy

Accurate characterization of the longitudinal (along the thickness direction) carrier transport property is of significant importance for evaluating the quality and performance of perovskite thin films. Herein, we report the development of a modified transient reflection (TR) spectroscopy method to realize the direct observation and determination of the longitudinal carrier transport process in MAPbI₃ polycrystalline thin films. Unlike the traditional TR spectroscopy, the carrier transport dynamics along the film thickness is resolved by making the pump (excitation) and probe beams spatially separated on each side of the film, so that the carrier transport from the excitation side to the probe side is directly captured. Utilizing this method, the longitudinal carrier diffusion coefficients (D) in various perovskite films with different thicknesses and grain sizes (extracted from SEM images) are determined, showing D values of ∼1.5 to 1.8 cm² s⁻¹ (∼0.5 to 0.8 cm² s⁻¹) for films with grain size larger (smaller) than the thickness. This empirical correlation between the longitudinal D and film thickness/grain size provides a reference for quick quality screening and evaluation of perovskite polycrystalline thin films.

A back-excitation transient reflection spectroscopy was developed to visualize longitudinal carrier transport in perovskite films, showing that the longitudinal diffusion coefficient decreases sharply with increasing thickness-to-grain-size ratio.

Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement

There is a growing interest in obtaining high quality monolayer transition metal disulfides for optoelectronic applications. Surface treatments using a range of chemicals have proven effective to improve the photoluminescence yield of these materials. However, the underlying mechanism for the photoluminescence enhancement is not clear, which prevents a rational design of passivation strategies. Here, a simple and effective approach to significantly enhance the photoluminescence is demonstrated by using a family of cation donors, which we show to be much more effective than commonly used p-dopants. We develop a detailed mechanistic picture for the action of these cation donors and demonstrate that one of them, bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI), enhances the photoluminescence of both MoS2 and WS2 to a level double that of the currently best performing super-acid trifluoromethanesulfonimide (H-TFSI) treatment. In addition, the ionic salts used in our treatments are compatible with greener solvents and are easier to handle than super-acids, providing the possibility of performing treatments during device fabrication. This work sets up rational selection rules for ionic chemicals to passivate transition metal disulfides and increases their potential in practical optoelectronic applications.

Enhanced Multiphoton Processes in Perovskite Metasurfaces

Multiphoton absorption and luminescence are fundamentally important nonlinear processes for utilizing efficient light-matter interaction. Resonant enhancement of nonlinear processes has been demonstrated for many nanostructures; however, it is believed that all higher-order processes are always much weaker than their corresponding linear processes. Here, we study multiphoton luminescence from structured surfaces and, combining multiple advantages of perovskites with the concept of metasurfaces, we demonstrate that the efficiency of nonlinear multiphoton processes can become comparable to the efficiency of the linear process. We reveal that the perovskite metasurface can enhance substantially two-photon stimulated emission with the threshold being comparable with that of the one-photon process. Our modeling of free-carrier dynamics and exciton recombination upon nonlinear photoexcitation uncovers that this effect can be attributed to the local field enhancement in structured media, a substantial increase of the mode overlap, and the selection rules of two-photon absorption in perovskites.

Carrier Diffusion and Recombination Anisotropy in the MAPbI3 Single Crystal

MAPbI₃, one of the archetypical metal halide perovskites, is an exciting semiconductor for a variety of optoelectronic applications. The photoexcited charge-carrier diffusion and recombination are important metrics in optoelectronic devices. Defects in grain interiors and boundaries of MAPbI₃ films cause significant nonradiative recombination energy losses. Besides defect impact, carrier diffusion and recombination anisotropy introduced by structural and electronic discrepancies related to the crystal orientation are vital topics. Here, large-sized MAPbI₃ single crystals (SCs) were grown, with the (110), (112), (100), and (001) crystal planes simultaneously exposed through the adjusting ratios of PbI₂ to methylammonium iodide (MAI). Such MAPbI₃ SCs exhibit a weak n-type semiconductor character, and the Fermi levels of these planes were slightly different, causing a homophylic p-n junction at crystal ledges. Utilizing MAPbI₃ SCs, the photoexcited carrier diffusion and recombination within the crystal planes and around the crystal ledges were investigated through time-resolved fluorescence microscope. It is revealed that both the (110) and (001) planes were facilitated to be exposed with more MAI in the growth solutions, and the photoluminescence (PL) of these planes manifesting a red-shift, longer carrier lifetime, and diffusion length compared with the (100) and (112) planes. A longer carrier diffusion length promoted photorecycling. However, excessive MAI-assisted grown MAPbI₃ SCs could increase the radiative recombination. In addition, it revealed that the carrier excited within the (001) and (112) planes was inclined to diffuse toward each other and was favorable to be extracted out of the grain boundaries or crystal ledges.

Local Energy Landscape Drives Long-Range Exciton Diffusion in Two-Dimensional Halide Perovskite Semiconductors

Halide perovskites are versatile semiconductors with applications including photovoltaics and light-emitting devices, having modular optoelectronic properties realizable through composition and dimensionality tuning. Layered Ruddlesden-Popper perovskites are particularly interesting due to their unique 2D character and charge carrier dynamics. However, long-range energy transport through exciton diffusion in these materials is not understood or realized. Here, local time-resolved luminescence mapping techniques are employed to visualize exciton transport in exfoliated flakes of the BA2MAn-1PbnI3n+1 perovskite family. Two distinct transport regimes are uncovered, depending on the temperature range. Above 100 K, diffusion is mediated by thermally activated hopping processes between localized states. At lower temperatures, a nonuniform energy landscape emerges in which transport is dominated by downhill energy transfer to lower-energy states, leading to long-range transport over hundreds of nanometers. Efficient, long-range, and switchable downhill transfer offers exciting possibilities for controlled directional long-range transport in these 2D materials for new applications.

Contrasting Electron and Hole Transfer Dynamics from CH(NH2)2PbI3 Perovskite Quantum Dots to Charge Transport Layers

In this work, the ultrafast transient absorption spectroscopy (TAs) was utilized to first investigate the charge transfer from the emerging FAPbI3 (FA = CH(NH2)2) perovskite quantum dots (PQDs) to charge transport layers. Specifically, we compared the TAs in pure FAPbI3 PQDs, PQDs grown with both electron and hole transfer layers (ETL and HTL), and PQDs with only ETL or HTL. The TA signals induced by photoexcited electrons decay much faster in PQDs samples with the ETL (~20 ps) compared to the pure FAPbI3 PQDs (>1 ns). These results reveal that electrons can effectively transport between coupled PQDs and transfer to the ETL (TiO2) at a time scale of 20 ps, much faster than the bimolecular charge recombination inside the PQDs (>1 ns), and the electron transfer efficiency is estimated to be close to 100%. In contrast, the temporal evolution of the TA signals in the PQDs with and without HTL exhibit negligible change, and no substantive hole transfer to the HTL (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], PTAA) occurs within 1 ns. The much slower hole transfer implies the further potential of increasing the overall photo-carrier conversion efficiency through enhancing the hole diffusion length and fine-tuning the coupling between the HTL and PQDs.

Local Rearrangement of the Iodide Defect Structure Determines the Phase Segregation Effect in Mixed-Halide Perovskites

Mixed-halide perovskites represent a particularly relevant case within the family of lead-halide perovskites. Beyond their technological relevance for a variety of optoelectronic devices, photoinduced structural changes characteristic of this type of material lead to extreme photophysical changes that are currently the subject of intense debate. Herein we show that the conspicuous photoinduced phase segregation characteristic of these materials is primarily the result of the local and metastable rearrangement of the iodide sublattice. A local photophysical study comprising spectrally resolved laser scanning confocal microscopy is employed to find a correlation between the defect density and the dynamics of photoinduced changes, which extend far from the illuminated region. We observe that iodide-rich regions evolve much faster from highly defective regions. Also, by altering the material composition, we find evidence for the interplay between the iodide-related defect distribution and the intra- and interdomain migration dynamics giving rise to the complexity of this process.