Low-Power and Ultra-Thin MoS2 Photodetectors on Glass

Boosting the UV-vis-NIR Photodetection Performance of MoS2 through the Cavity Enhancement Effect and Bulk Heterojunction Strategy

Navigating more effective methods to enhance the photon utilization of photodetectors poses a significant challenge. This study initially investigates the impact of morphological alterations in 2H-MoS2 on photodetector (PD) performance. The results reveal that compared to layered MoS2 (MoS2 NLs), MoS2 nanotubes (MoS2 NTs) impart a cavity enhancement effect through multiple light reflections. This structural feature significantly enhances the photodetection performance of the MoS2-based PDs. We further employ the heterojunction strategy to construct Y-TiOPc NPs:MoS2 NTs, utilizing Y-TiOPc NPs (Y-type titanylphthalocyanine) as the vis-NIR photosensitizer and MoS2 NTs as the photon absorption enhancer. This approach not only addresses the weak absorption of MoS2 NTs in the near-infrared region but also enhances carrier generation, separation, and transport efficiency. Additionally, the band bending phenomenon induced by trapped-electrons at the interface between ITO and the photoactive layer significantly enhances the hole tunneling injection capability from the external circuit. By leveraging the synergistic effects of the aforementioned strategies, the PD based on Y-TiOPc NPs:MoS2 NTs (Y:MT-PD) exhibits superior photodetection performance in the wavelength range of 365-940 nm compared to MoS2 NLs-based PD and MoS2 NTs-based PD. Particularly noteworthy are the peak values of key metrics for Y:MT-PD, such as EQE, R, and D* that are 4947.6%, 20588 mA/W, and 1.94 × 1012 Jones, respectively. The multiperiod time-resolved photocurrent response curves of Y:MT-PD also surpass those of the other two PDs, displaying rapid, stable, and reproducible responses across all wavelengths. This study provides valuable insights for the further development of photoactive materials with a high photon utilization efficiency.

A Butterfly-Inspired Multisensory Neuromorphic Platform for Integration of Visual and Chemical Cues

Unisensory cues are often insufficient for animals to effectively engage in foraging, mating, and predatory activities. In contrast, integration of cues collected from multiple sensory organs enhances the overall perceptual experience and thereby facilitates better decision-making. Despite the importance of multisensory integration in animals, the field of artificial intelligence (AI) and neuromorphic computing has primarily focused on processing unisensory information. This lack of emphasis on multisensory integration can be attributed to the absence of a miniaturized hardware platform capable of co-locating multiple sensing modalities and enabling in-sensor and near-sensor processing. In this study, this limitation is addressed by utilizing the chemo-sensing properties of graphene and the photo-sensing capability of monolayer molybdenum disulfide (MoS2 ) to create a multisensory platform for visuochemical integration. Additionally, the in-memory-compute capability of MoS2 memtransistors is leveraged to develop neural circuits that facilitate multisensory decision-making. The visuochemical integration platform is inspired by intricate courtship of Heliconius butterflies, where female species rely on the integration of visual cues (such as wing color) and chemical cues (such as pheromones) generated by the male butterflies for mate selection. The butterfly-inspired visuochemical integration platform has significant implications in both robotics and the advancement of neuromorphic computing, going beyond unisensory intelligence and information processing.

Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics

Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS2), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS2 on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS2 growth process, and that the transfer process degrades the electronic properties of MoS2. Here we report a strategy for directly synthesizing high-quality and high-crystallinity MoS2 monolayers on polymers and ultrathin glass substrates (thickness ~30 µm) at ~150 °C using metal-organic chemical vapour deposition. By avoiding the transfer process, the MoS2 quality is preserved. On flexible field-effect transistors, we achieve a mobility of 9.1 cm2 V-1 s-1 and a positive threshold voltage of +5 V, which is essential for reducing device power consumption. Moreover, under bending conditions, our logic circuits exhibit stable operation while phototransistors can detect light over a wide range of wavelengths from 405 nm to 904 nm.

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films

Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.

An all 2D bio-inspired gustatory circuit for mimicking physiology and psychology of feeding behavior

Animal behavior involves complex interactions between physiology and psychology. However, most AI systems neglect psychological factors in decision-making due to a limited understanding of the physiological-psychological connection at the neuronal level. Recent advancements in brain imaging and genetics have uncovered specific neural circuits that regulate behaviors like feeding. By developing neuro-mimetic circuits that incorporate both physiology and psychology, a new emotional-AI paradigm can be established that bridges the gap between humans and machines. This study presents a bio-inspired gustatory circuit that mimics adaptive feeding behavior in humans, considering both physiological states (hunger) and psychological states (appetite). Graphene-based chemitransistors serve as artificial gustatory taste receptors, forming an electronic tongue, while 1L-MoS2 memtransistors construct an electronic-gustatory-cortex comprising a hunger neuron, appetite neuron, and feeding circuit. This work proposes a novel paradigm for emotional neuromorphic systems with broad implications for human health. The concept of gustatory emotional intelligence can extend to other sensory systems, benefiting future humanoid AI.

A bio-inspired visuotactile neuron for multisensory integration

Multisensory integration is a salient feature of the brain which enables better and faster responses in comparison to unisensory integration, especially when the unisensory cues are weak. Specialized neurons that receive convergent input from two or more sensory modalities are responsible for such multisensory integration. Solid-state devices that can emulate the response of these multisensory neurons can advance neuromorphic computing and bridge the gap between artificial and natural intelligence. Here, we introduce an artificial visuotactile neuron based on the integration of a photosensitive monolayer MoS2 memtransistor and a triboelectric tactile sensor which minutely captures the three essential features of multisensory integration, namely, super-additive response, inverse effectiveness effect, and temporal congruency. We have also realized a circuit which can encode visuotactile information into digital spiking events, with probability of spiking determined by the strength of the visual and tactile cues. We believe that our comprehensive demonstration of bio-inspired and multisensory visuotactile neuron and spike encoding circuitry will advance the field of neuromorphic computing, which has thus far primarily focused on unisensory intelligence and information processing.

A Peripheral-Free True Random Number Generator Based on Integrated Circuits Enabled by Atomically Thin Two-Dimensional Materials

A true random number generator (TRNG) is essential to ensure information security for Internet of Things (IoT) edge devices. While pseudorandom number generators (PRNGs) have been instrumental, their deterministic nature limits their application in security-sensitive scenarios. In contrast, hardware-based TRNGs derived from physically unpredictable processes offer greater reliability. This study demonstrates a peripheral-free TRNG utilizing two cascaded three-stage inverters (TSIs) in conjunction with an XOR gate composed of monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) by exploiting the stochastic charge trapping and detrapping phenomena at and/or near the MoS2/dielectric interface. The entropy source passes the NIST SP800-90B tests with a minimum normalized entropy of 0.8780, while the generated bits pass the NIST SP800-22 randomness tests without any postprocessing. Moreover, the keys generated using these random bits are uncorrelated with near-ideal entropy, bit uniformity, and Hamming distances, exhibiting resilience against machine learning (ML) attacks, temperature variations, and supply bias fluctuations with a frugal energy expenditure of 30 pJ/bit. This approach offers an advantageous alternative to conventional silicon, memristive, and nanomaterial-based TRNGs as it obviates the need for extensive peripherals while harnessing the potential of atomically thin 2D materials in developing low-power TRNGs.

Enhanced Goos-Hänchen shift in a defective Pell quasiperiodic photonic crystal with monolayer MoS2

Monolayer M o S 2 has attracted wide attention because of its finite bandgap, and it has become a potential candidate for the investigation of the Goos-Hänchen (GH) shift. However, the magnitude of the GH shift in free-standing monolayer M o S 2 is small, which greatly hinders its possible applications in the photoelectric sensors and detectors. We have theoretically designed a defective quasiperiodic photonic crystal and investigated its GH shift, where monolayer M o S 2 is sandwiched between two quasiperiodic photonic crystals arranged by the Pell sequence. By optimizing the thicknesses of all the components and the period number of the Pell quasiperiodic photonic crystal, we find that the GH shift of the designed structure is significantly enhanced at the specific working wavelength. In addition, we discuss the influence of the thicknesses of the dielectric components on the GH shift. Our work confirms that the quasiperiodic photonic crystal structure has the ability to enhance the GH shift of monolayer transition metal dichalcogenides, which provides a new platform for the GH investigations and greatly promotes the applications of this defective structure in optoelectric devices.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Hydrogen-Terminated Two-Dimensional Germanane/Silicane Alloys as Self-Powered Photodetectors and Sensors

2D monoelemental materials, particularly germanene and silicene (the single layer of germanium and silicon), which are the base materials for modern electronic devices demonstrated tremendous attraction for their 2D layer structure along with the tuneable electronics and optical band gap. The major shortcoming of synthesized thermodynamically very unstable layered germanene and silicene with their inclination toward oxidation was overcome by topochemical deintercalation of a Zintl phase (CaGe₂, CaGe_1.5Si_0.5, and CaGeSi) in a protic environment. The exfoliated Ge-H, Ge_0.75Si_0.25H, and Ge_0.5Si_0.5H were successfully synthesized and employed as the active layer for photoelectrochemical photodetectors, which showed broad response (420-940 nm), unprecedented responsivity, and detectivity on the order of 168 μA W^-1 and 3.45 × 10⁸ cm Hz^1/2 W^-1, respectively. The sensing capability of exfoliated germanane and silicane composites was explored using electrochemical impedance spectroscopy with ultrafast response and recovery time of less than 1 s. These positive findings serve as the application of exfoliated germanene and silicene composites and can pave a new path to practical applications in efficient future devices.

Hardware and Information Security Primitives Based on 2D Materials and Devices

Hardware security is a major concern for the entire semiconductor ecosystem that accounts for billions of dollars in annual losses. Similarly, information security is a critical need for the rapidly proliferating edge devices that continuously collect and communicate a massive volume of data. While silicon-based complementary metal-oxide-semiconductor technology offers security solutions, these are largely inadequate, inefficient, and often inconclusive, as well as resource intensive in time, energy, and cost, leading to tremendous room for innovation in this field. Furthermore, silicon-based security primitives have shown vulnerability to machine learning (ML) attacks. In recent years, 2D materials such as graphene and transition metal dichalcogenides have been intensely explored to mitigate these security challenges. In this review, 2D-materials-based hardware security solutions such as camouflaging, true random number generation, watermarking, anticounterfeiting, physically unclonable functions, and logic locking of integrated circuits (ICs) are summarized with accompanying discussion on their reliability and resilience to ML attacks. In addition, the role of native defects in 2D materials in developing high entropy hardware security primitives is also examined. Finally, the existing challenges for 2D materials, which must be overcome for large-scale deployment of 2D ICs to meet the security needs of the semiconductor industry, are discussed.

Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors

Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (L_CH) and contact length (L_C), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS₂ FETs with L_CH down to 100 nm and L_C down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when L_C is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.

Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing

While neuromorphic computing can define a new era for next-generation computing architecture, the introduction of an efficient synaptic transistor for neuromorphic edge computing still remains a challenge. Here, we envision an atomically thin 2D Te synaptic device capable of achieving a desirable neuromorphic edge computing design. The hydrothermally grown 2D Te nanosheet synaptic transistor apparently mimicked the biological synaptic nature, exhibiting 100 effective multilevel states, a low power consumption of ∼110 fJ, excellent linearity, and short-/long-term plasticity. Furthermore, the 2D Te synaptic device achieved reconfigurable MNIST recognition accuracy characteristics of 88.2%, even after harmful detergent environment infection. We believe that this work serves as a guide for developing futuristic neuromorphic edge computing.

Zero Dimensional-Two Dimensional Hybrid Photodetectors Using Multilayer MoS2 and Lead Halide Perovskite Quantum Dots with a Tunable Bandgap

We report high-performance 0D-2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI₃, Cs_XFA_X-1PbI₃, and FAPbI₃) quantum dots and MOCVD-grown bilayer MoS₂. In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS₂ transport layer. With tunable wavelength lead halide PQDs, the 0D-2D hybrid photodetector shows a high responsivity up to 10⁷ AW^-1 and high specific detectivity exceeding 10¹³ Jones due to the difference in the built-in potential between PQDs and multilayer MoS₂ layers. This work proposes the possibility of fabricating high-performance photodetectors by hybridizing PQDs of various band gaps with 2D materials.

An All-in-One Bioinspired Neural Network

In spite of recent advancements in artificial neural networks (ANNs), the energy efficiency, multifunctionality, adaptability, and integrated nature of biological neural networks remain largely unimitated by hardware neuromorphic computing systems. Here, we exploit optoelectronic, computing, and programmable memory devices based on emerging two-dimensional (2D) layered materials such as MoS₂ to demonstrate a monolithically integrated, multipixel, and "all-in-one" bioinspired neural network (BNN) capable of sensing, encoding, learning, forgetting, and inferring at minuscule energy expenditure. We also demonstrate learning adaptability and simulate learning challenges under specific synaptic conditions to mimic biological learning. Our findings highlight the potential of in-memory computing and sensing based on emerging 2D materials, devices, and integrated circuits to not only overcome the bottleneck of von Neumann computing in conventional CMOS designs but also to aid in eliminating the peripheral components necessary for competing technologies such as memristors.

Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices

Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.

The Road for 2D Semiconductors in the Silicon Age

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.

All-in-one, bio-inspired, and low-power crypto engines for near-sensor security based on two-dimensional memtransistors

In the emerging era of the internet of things (IoT), ubiquitous sensors continuously collect, consume, store, and communicate a huge volume of information which is becoming increasingly vulnerable to theft and misuse. Modern software cryptosystems require extensive computational infrastructure for implementing ciphering algorithms, making them difficult to be adopted by IoT edge sensors that operate with limited hardware resources and at low energy budgets. Here we propose and experimentally demonstrate an “all-in-one” 8 × 8 array of robust, low-power, and bio-inspired crypto engines monolithically integrated with IoT edge sensors based on two-dimensional (2D) memtransistors. Each engine comprises five 2D memtransistors to accomplish sensing and encoding functionalities. The ciphered information is shown to be secure from an eavesdropper with finite resources and access to deep neural networks. Our hardware platform consists of a total of 320 fully integrated monolayer MoS₂-based memtransistors and consumes energy in the range of hundreds of picojoules and offers near-sensor security.

Internet of things (IoT) sensors can collect, store and communicate large volumes of information, which require effective security measures. Here, the authors report the realization of low-power edge sensors based on photosensitive and programmable 2D memtransistors, integrating sensing, storage and encryption functionalities.

Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control

Advances in large-area and high-quality 2D transition metal dichalcogenides (TMDCs) growth are essential for semiconductor applications. Here, the gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD) of 2D TMDCs is reported. It is determined that sodium propionate (SP) is an ideal gas-phase alkali-metal additive for nucleation control in the MOCVD of 2D TMDCs. The grain size of MoS₂ in the GAA-MOCVD process is larger than that in the conventional MOCVD process. This method can be applied to the growth of various TMDCs (MoS₂ , MoSe₂ , WSe₂ , and WSe₂ ) and the generation of large-scale continuous films. Furthermore, the growth behaviors of MoS₂ under different SP and oxygen injection time conditions are systematically investigated to determine the effects of SP and oxygen on nucleation control in the GAA-MOCVD process. It is found that the combination of SP and oxygen increases the grain size and nucleation suppression of MoS₂ . Thus, the GAA-MOCVD with a precise and controllable supply of a gas-phase alkali metal and oxygen allows achievement of optimum growth conditions that maximizes the grain size of MoS₂ . It is expected that GAA-MOCVD can provide a way for batch fabrication of large-scale atomically thin electronic devices based on 2D semiconductors.

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.

Secure Electronics Enabled by Atomically Thin and Photosensitive Two-Dimensional Memtransistors

The rapid proliferation of security compromised hardware in today's integrated circuit (IC) supply chain poses a global threat to the reliability of communication, computing, and control systems. While there have been significant advancements in detection and avoidance of security breaches, current top-down approaches are mostly inadequate, inefficient, often inconclusive, and resource extensive in time, energy, and cost, offering tremendous scope for innovation in this field. Here, we introduce an energy and area efficient non-von Neumann hardware platform providing comprehensive and bottom-up security solutions by exploiting inherent device-to-device variation, electrical programmability, and persistent photoconductivity demonstrated by atomically thin two-dimensional memtransistors. We realize diverse security primitives including physically unclonable function, anticounterfeit measures, intellectual property (IP) watermarking, and IC camouflaging to prevent false authentication, detect recycled and remarked ICs, protect IP theft, and stop reverse engineering of ICs.

Demonstration of Stochastic Resonance, Population Coding, and Population Voting Using Artificial MoS2 Based Synapses

Fast detection of weak signals at low energy expenditure is a challenging but inescapable task for the evolutionary success of animals that survive in resource constrained environments. This task is accomplished by the sensory nervous system by exploiting the synergy between three astounding neural phenomena, namely, stochastic resonance (SR), population coding (PC), and population voting (PV). In SR, the constructive role of synaptic noise is exploited for the detection of otherwise invisible signals. In PC, the redundancy in neural population is exploited to reduce the detection latency. Finally, PV ensures unambiguous signal detection even in the presence of excessive noise. Here we adopt a similar strategies and experimentally demonstrate how a population of stochastic artificial neurons based on monolayer MoS₂ field effect transistors (FETs) can use an optimum amount of white Gaussian noise and population voting to detect invisible signals at a frugal energy expenditure (∼10s of nano-Joules). Our findings can aid remote sensing in the emerging era of the Internet of things (IoT) that thrive on energy efficiency.

Growth of High-Quality Monolayer Transition Metal Dichalcogenide Nanocrystals by Chemical Vapor Deposition and Their Photoluminescence and Electrocatalytic Properties

Two-dimensional transition metal dichalcogenide (TMDC) nanocrystals (NCs) exhibit unique optical and electrocatalytic properties. However, the growth of uniform and high-quality NCs of monolayer TMDC remains a challenge. Until now, most of them are synthesized via a solution-based hydrothermal process or ultrasonic exfoliation method, in which the capping ligands introduced from organic solution often quench the optical and electrocatalytic properties of TMDC NCs. Moreover, it is difficult to homogeneously disperse the solution-based TMDC NCs on a substrate for device fabrication, since the dispersed NCs can easily aggregate. Here, we put forward a novel CVD method to grow closely spaced MoS₂ NCs around 5 nm in lateral size. TEM and AFM characterizations demonstrate the monolayer and high-crystalline nature of MoS₂ NCs. An obvious blue-shift with 130 meV in photoluminescence signals can be observed. The MoS₂ NCs also show an outstanding surface-enhanced Raman scattering for organic molecules due to their localized surface plasmon and abundant edge sites and exhibit excellent electrocatalytic properties for the hydrogen-evolution reaction with a very low onset potential of ∼50 mV and Tafel slope of ∼57 mV/decade. Finally, we further demonstrate this kind of CVD method as a versatile platform for the growth of other TMDC NCs, such as WSe₂ and MoSe₂ NCs.

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.

Self-Powered Broadband Photodetector and Sensor Based on Novel Few-Layered Pd3(PS4)2 Nanosheets

Optoelectronics and sensing devices are of enormous importance in our modern lives, which has propelled the scientific community to explore new two-dimensional (2D) nanomaterials to meet the requirements of future devices. Herein, we present the exfoliation of palladium thiophosphate (Pd₃(PS₄)₂) by mechanical shear force exfoliation. The Pd₃(PS₄)₂-based photoelectrochemical (PEC) device demonstrated self-powered broadband photodetection in the range of 385-940 nm with an unprecedented responsivity of 2 A W^-1 and a specific detectivity of about 8.67 × 10¹¹ cm Hz^1/2 W^-1 under the illumination of 420 nm LED light. The crucial parameters such as photoresponsivity, response, and recovery time of the device can be controlled by an externally applied voltage and the analyte concentration. Moreover, Pd₃(PS₄)₂-based vapor-sensing devices exhibited frequency-dependent selective acetone sensing in the presence of other organic vapors with an ultrafast response and a recovery time of less than 1 s. Finally, the photocatalytic activity of Pd₃(PS₄)₂ was revealed, which can be attributed to the presence of an appropriate band alignment with the catalytic activity of Pd. This novel material with the aforementioned fascinating phenomenon will pave the way toward practical future applications in optoelectronics and sensing.

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS₂ and WS₂ films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS₂ FETs and 160 WS₂ FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm² chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm² V^-1 s^-1 in WS₂ FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.