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Wu Y, Nie C, Sun F, Jiang X, Zhang X, Fu J, Peng Y, Wei X. Uncooled Broadband Photodetection via Light Trapping in Conformal PtTe 2-Silicon Nanopillar Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22632-22640. [PMID: 38642041 DOI: 10.1021/acsami.4c00827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/22/2024]
Abstract
Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due to their unique bandgap structure and high carrier mobility. Combining them with classical semiconductor materials to form heterojunctions enables broadband optoelectronic conversion at room temperature. However, the low light absorption of layered Dirac semimetals substantially limits the device's responsivity in the infrared band. Herein, a three-dimensional (3D) heterostructure, composed of silicon nanopillars (SiNPs) and a conformal PtTe2 film, is proposed and demonstrated to enhance the photoresponsivity for uncooled broadband detection. The light trapping effect in the 3D heterostructure efficiently promotes the interaction between light and PtTe2, while also enhancing the light absorption efficiency of silicon, which enables the enhancement of the device responsivity across a broadband spectrum. Experimentally, the PtTe2-SiNPs heterojunction device demonstrates excellent photoelectric conversion behavior across the visible, near-infrared, and long-wave infrared (LWIR) bands, with its responsivity demonstrating an order-of-magnitude improvement compared to the counterparts with planar silicon heterojunctions. Under 11 μm laser irradiation, the noise equivalent power (NEP) can reach 1.76 nW·Hz-1/2 (@1 kHz). These findings offer a strategic approach to the design and fabrication of high-performance broadband photodetectors based on Dirac semimetals.
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Affiliation(s)
- Yuequan Wu
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Changbin Nie
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feiying Sun
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Xilong Jiang
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Xianning Zhang
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Jintao Fu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yang Peng
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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2
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Li G, Chen C, Liu Z, Sun Q, Liang L, Du C, Chen G. Distinguishing thermoelectric and photoelectric modes enables intelligent real-time detection of indoor electrical safety hazards. MATERIALS HORIZONS 2024; 11:1679-1688. [PMID: 38305351 DOI: 10.1039/d3mh02187d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Due to the prevalence of electronic devices, intelligent sensors have attracted much interest for the detecting and providing alarms with respect to indoor electrical safety. Nonetheless, how to effectively identify various indoor electrical safety hazards remains a challenge. In this study, we fabricated single-walled carbon nanotube/poly(3-hexylthiophene-2,5-diyl) (SWCNT/P3HT) composites with exceptional bifunctional thermoelectric and photoelectric responses. Through synergy of the thermo-/photoelectric effects, the composites yielded greatly enhanced output voltages compared with the use of thermoelectric effects alone. Interestingly, modes of heat transfer can be effectively distinguished using the nominal Seebeck coefficients. Based on the remarkable output voltages and deviations in the nominal Seebeck coefficients, we developed indoor intelligent sensors capable of effectively identifying and monitoring diverse indoor electrical conditions, including electrical overheating, fire, and air conditioning flow. This pioneering investigation proposes a novel avenue for designing intelligent sensors that can recognize heat transfer modes and hence effectively monitor indoor electrical safety hazards.
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Affiliation(s)
- Gang Li
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.
| | - Chengzhi Chen
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.
| | - Zijian Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.
| | - Qi Sun
- College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lirong Liang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.
| | - Chunyu Du
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.
| | - Guangming Chen
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China.
- College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, China
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3
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Wang F, Zhu S, Chen W, Han J, Duan R, Wang C, Dai M, Sun F, Jin Y, Wang QJ. Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions. NATURE NANOTECHNOLOGY 2024; 19:455-462. [PMID: 38225358 DOI: 10.1038/s41565-023-01593-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 12/12/2023] [Indexed: 01/17/2024]
Abstract
A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.
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Affiliation(s)
- Fakun Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Wenduo Chen
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Jiayue Han
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Chongwu Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Mingjin Dai
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fangyuan Sun
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yuhao Jin
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qi Jie Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
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Guo X, Lu X, Jiang P, Bao X. Touchless Thermosensation Enabled by Flexible Infrared Photothermoelectric Detector for Temperature Prewarning Function of Electronic Skin. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313911. [PMID: 38424290 DOI: 10.1002/adma.202313911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 02/12/2024] [Indexed: 03/02/2024]
Abstract
Artificial skin, endowed with the capability to perceive thermal stimuli without physical contact, will bring innovative interactive experiences into smart robotics and augmented reality. The implementation of touchless thermosensation, responding to both hot and cold stimuli, relies on the construction of a flexible infrared detector operating in the long-wavelength infrared range to capture the spontaneous thermal radiation. This imposes rigorous requirements on the photodetection performance and mechanical flexibility of the detector. Herein, a flexible and wearable infrared detector is presented, on basis of the photothermoelectric coupling of the tellurium-based thermoelectric multilayer film and the infrared-absorbing polyimide substrate. By suppressing the optical reflection loss and aligning the destructive interference position with the absorption peak of polyimide, the fabricated thermopile detector exhibits high sensitivity to the thermal radiation over a broad source temperature range from -50 to 110 °C, even capable of resolving 0.05 °C temperature change. Spatially resolved radiation distribution sensing is also achieved by constructing an integrated thermopile array. Furthermore, an established temperature prewarning system is demonstrated for soft robotic gripper, enabling the identification of noxious thermal stimuli in a contactless manner. A feasible strategy is offered here to integrate the infrared detection technique into the sensory modality of electronic skin.
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Affiliation(s)
- Xiaohan Guo
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- School of Biomedical Engineering, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, 215123, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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Wang H, Li Y, Gao P, Wang J, Meng X, Hu Y, Yang J, Huang Z, Gao W, Zheng Z, Wei Z, Li J, Huo N. Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309371. [PMID: 37769436 DOI: 10.1002/adma.202309371] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 09/27/2023] [Indexed: 09/30/2023]
Abstract
Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization- and gate-tunable optoelectronic reverse phenomenon are developed based on semimetal 1T'-MoTe2 and ambipolar WSe2 . The device exhibits gate-tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10-2 to 103 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ≈30, which is compelling among the state-of-the-art 2D-based polarized detectors. The sign reversal of polarization-sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/-∞→-1). This work develops a photovoltaic detector with polarization- and gate-tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.
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Affiliation(s)
- Hanyu Wang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Yan Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Peng Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Jina Wang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Xuefeng Meng
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Yin Hu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Nengjie Huo
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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Zhang Y, Meng Y, Wang L, Lan C, Quan Q, Wang W, Lai Z, Wang W, Li Y, Yin D, Li D, Xie P, Chen D, Yang Z, Yip S, Lu Y, Wong CY, Ho JC. Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance. Nat Commun 2024; 15:728. [PMID: 38272917 PMCID: PMC10810900 DOI: 10.1038/s41467-024-44970-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Accepted: 01/11/2024] [Indexed: 01/27/2024] Open
Abstract
High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.
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Affiliation(s)
- Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - You Meng
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Liqiang Wang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Yezhan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Di Yin
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhe Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Chun-Yuen Wong
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan.
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7
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Ding J, Liu X, Zhou S, Huang J, Li Y, Gao Y, Dong C, Yue G, Tan F. In-situ free-standing inorganic 2D Cs 2PbI 2Cl 2 nanosheets for efficient self-powered photodetectors with carbon electrode. J Colloid Interface Sci 2024; 654:1356-1364. [PMID: 37918095 DOI: 10.1016/j.jcis.2023.10.126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 10/22/2023] [Accepted: 10/25/2023] [Indexed: 11/04/2023]
Abstract
Inorganic two-dimensional (2D) perovskites possess excellent thermal stability and high charge mobility, making them an attractive choice for stable optoelectronic devices such as photodetectors (PDs). The formation of an appropriate inorganic 2D perovskite structure is of great importance to efficient PDs, especially to that of planar self-powered photovoltaic PDs featuring perpendicular charge transport channels. Herein, we implemented morphological engineering on wide bandgap inorganic 2D perovskite, Cs2PbI2Cl2, demonstrating a successful preparation of in-situ free-standing nanosheets structure with proper charge channels for photovoltaic type self-powered PDs. Compared with its counterpart with a nanoblock morphology, the 2D nanosheet Cs2PbI2Cl2 film exhibits enhanced charge mobility and purified Ruddlesden-Popper phase that can withstand high-energy electron beam radiation, accelerated thermal aging and long-term shelf storage. Sandwiching Cs2PbI2Cl2 nanosheet film in between tin oxide (SnO2) and polythiophene (P3HT) as electron and hole acceptors, respectively, the constructed photovoltaic type structure exhibits effective dissociation of excitons at the cascade type-II interface. The nanosheets enable lower dark current and more efficient charge collection than the nanoblock structure. As a result, the self-powered photodetectors with 2D Cs2PbI2Cl2 nanosheets deliver an outstanding responsivity of 698 mW/cm2 and a detectivity of 8.6×1012 Jones. The stable PDs can be applied to monitor ultraviolet irradiation in real outdoor conditions. Our work demonstrates the significant role of morphology tuning of 2D inorganic perovskite in stable, cost-effective and efficient photodetectors.
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Affiliation(s)
- Jianfeng Ding
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Xinying Liu
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Shun Zhou
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Junyi Huang
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Yaqing Li
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Yueyue Gao
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Chen Dong
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Gentian Yue
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China
| | - Furui Tan
- Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, PR China.
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Han J, Wang F, Zhang Y, Deng W, Dai M, Hu F, Chen W, Cui J, Zhang C, Zhu S, Wang C, Ye M, Han S, Luo Y, Zhai T, Wang J, Wang QJ. Mid-Infrared Bipolar and Unipolar Linear Polarization Detections in Nb 2 GeTe 4 /MoS 2 Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305594. [PMID: 37740257 DOI: 10.1002/adma.202305594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2023] [Revised: 09/16/2023] [Indexed: 09/24/2023]
Abstract
Detecting and distinguishing light polarization states, one of the most basic elements of optical fields, have significant importance in both scientific studies and industry applications. Artificially fabricated structures, e.g., metasurfaces with anisotropic absorptions, have shown the capabilities of detecting polarization light and controlling. However, their operations mainly rely on resonant absorptions based on structural designs that are usually narrow bands. Here, a mid-infrared (MIR) broadband polarization photodetector with high PRs and wavelength-dependent polarities using a 2D anisotropic/isotropic Nb2 GeTe4 /MoS2 van der Waals (vdWs) heterostructure is demonstrated. It is shown that the photodetector exhibits high PRs of 48 and 34 at 4.6 and 11.0 µm wavelengths, respectively, and even a negative PR of -3.38 for 3.7 µm under the zero bias condition at room temperature. Such interesting results can be attributed to the superimposed effects of a photovoltaic (PV) mechanism in the Nb2 GeTe4 /MoS2 hetero-junction region and a bolometric mechanism in the MoS2 layer. Furthermore, the photodetector demonstrates its effectiveness in bipolar and unipolar polarization encoding communications and polarization imaging enabled by its unique and high PRs.
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Affiliation(s)
- Jiayue Han
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fakun Wang
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yue Zhang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wenjie Deng
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Mingjin Dai
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangchen Hu
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wenduo Chen
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jieyuan Cui
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chaoyi Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Zhu
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yu Luo
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jun Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Qi Jie Wang
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Physical and Mathematical Science, and, Photonics Institute, Nanyang Technological University, Singapore, 639798, Singapore
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9
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Li D, Xu C, Xie J, Lee C. Research Progress in Surface-Enhanced Infrared Absorption Spectroscopy: From Performance Optimization, Sensing Applications, to System Integration. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2377. [PMID: 37630962 PMCID: PMC10458771 DOI: 10.3390/nano13162377] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/13/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Infrared absorption spectroscopy is an effective tool for the detection and identification of molecules. However, its application is limited by the low infrared absorption cross-section of the molecule, resulting in low sensitivity and a poor signal-to-noise ratio. Surface-Enhanced Infrared Absorption (SEIRA) spectroscopy is a breakthrough technique that exploits the field-enhancing properties of periodic nanostructures to amplify the vibrational signals of trace molecules. The fascinating properties of SEIRA technology have aroused great interest, driving diverse sensing applications. In this review, we first discuss three ways for SEIRA performance optimization, including material selection, sensitivity enhancement, and bandwidth improvement. Subsequently, we discuss the potential applications of SEIRA technology in fields such as biomedicine and environmental monitoring. In recent years, we have ushered in a new era characterized by the Internet of Things, sensor networks, and wearable devices. These new demands spurred the pursuit of miniaturized and consolidated infrared spectroscopy systems and chips. In addition, the rise of machine learning has injected new vitality into SEIRA, bringing smart device design and data analysis to the foreground. The final section of this review explores the anticipated trajectory that SEIRA technology might take, highlighting future trends and possibilities.
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Affiliation(s)
- Dongxiao Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; (D.L.); (C.X.); (J.X.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; (D.L.); (C.X.); (J.X.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
| | - Junsheng Xie
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; (D.L.); (C.X.); (J.X.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; (D.L.); (C.X.); (J.X.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou 215123, China
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10
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Niu Y, Zhou X, Gao W, Fu M, Duan Y, Yao J, Wang B, Yang M, Zheng Z, Li J. Interfacial Engineering of In 2Se 3/h-BN/CsPb(Br/I) 3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System. ACS NANO 2023; 17:13760-13768. [PMID: 37428004 DOI: 10.1021/acsnano.3c03319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
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Affiliation(s)
- Yingying Niu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Xin Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Maixia Fu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Yule Duan
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, PR China
| | - Bing Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, PR China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, PR China
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11
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Liu W, Yang X, Wang Z, Li Y, Li J, Feng Q, Xie X, Xin W, Xu H, Liu Y. Self-powered and broadband opto-sensor with bionic visual adaptation function based on multilayer γ-InSe flakes. LIGHT, SCIENCE & APPLICATIONS 2023; 12:180. [PMID: 37488112 PMCID: PMC10366227 DOI: 10.1038/s41377-023-01223-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 06/25/2023] [Accepted: 07/04/2023] [Indexed: 07/26/2023]
Abstract
Visual adaptation that can autonomously adjust the response to light stimuli is a basic function of artificial visual systems for intelligent bionic robots. To improve efficiency and reduce complexity, artificial visual systems with integrated visual adaptation functions based on a single device should be developed to replace traditional approaches that require complex circuitry and algorithms. Here, we have developed a single two-terminal opto-sensor based on multilayer γ-InSe flakes, which successfully emulated the visual adaptation behaviors with a new working mechanism combining the photo-pyroelectric and photo-thermoelectric effect. The device can operate in self-powered mode and exhibit good human-eye-like adaptation behaviors, which include broadband light-sensing image adaptation (from ultraviolet to near-infrared), near-complete photosensitivity recovery (99.6%), and synergetic visual adaptation, encouraging the advancement of intelligent opto-sensors and machine vision systems.
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Affiliation(s)
- Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Xuhui Yang
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Zhongqiang Wang
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China.
| | - Jixiu Li
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Qiushi Feng
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Xiuhua Xie
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, China
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China.
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
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12
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Dai M, Wang C, Qiang B, Jin Y, Ye M, Wang F, Sun F, Zhang X, Luo Y, Wang QJ. Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity. Nat Commun 2023; 14:3421. [PMID: 37296149 DOI: 10.1038/s41467-023-39071-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 05/22/2023] [Indexed: 06/12/2023] Open
Abstract
Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 104), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuran Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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13
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Aftab S, Hegazy HH. Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205778. [PMID: 36732842 DOI: 10.1002/smll.202205778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 01/20/2023] [Indexed: 05/04/2023]
Abstract
The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, Abha, P.O. Box 9004, Saudi Arabia
- 2Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, P. O. Box 9004, Saudi Arabia
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14
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Wang F, Hu F, Dai M, Zhu S, Sun F, Duan R, Wang C, Han J, Deng W, Chen W, Ye M, Han S, Qiang B, Jin Y, Chua Y, Chi N, Yu S, Nam D, Chae SH, Liu Z, Wang QJ. A two-dimensional mid-infrared optoelectronic retina enabling simultaneous perception and encoding. Nat Commun 2023; 14:1938. [PMID: 37024508 PMCID: PMC10079931 DOI: 10.1038/s41467-023-37623-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Accepted: 03/22/2023] [Indexed: 04/08/2023] Open
Abstract
Infrared machine vision system for object perception and recognition is becoming increasingly important in the Internet of Things era. However, the current system suffers from bulkiness and inefficiency as compared to the human retina with the intelligent and compact neural architecture. Here, we present a retina-inspired mid-infrared (MIR) optoelectronic device based on a two-dimensional (2D) heterostructure for simultaneous data perception and encoding. A single device can perceive the illumination intensity of a MIR stimulus signal, while encoding the intensity into a spike train based on a rate encoding algorithm for subsequent neuromorphic computing with the assistance of an all-optical excitation mechanism, a stochastic near-infrared (NIR) sampling terminal. The device features wide dynamic working range, high encoding precision, and flexible adaption ability to the MIR intensity. Moreover, an inference accuracy more than 96% to MIR MNIST data set encoded by the device is achieved using a trained spiking neural network (SNN).
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Affiliation(s)
- Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangchen Hu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai, 200433, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Zhu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiayue Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wenjie Deng
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wenduo Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yunda Chua
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Nan Chi
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai, 200433, China
| | - Shaohua Yu
- Peng Cheng Laboratory, Shenzhen, 518055, China
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sang Hoon Chae
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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15
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Hong L, Wang L, Cai M, Yao Y, Guo X, Zhu Y. Sensitive Room-Temperature Graphene Photothermoelectric Terahertz Detector Based on Asymmetric Antenna Coupling Structure. SENSORS (BASEL, SWITZERLAND) 2023; 23:3249. [PMID: 36991960 PMCID: PMC10058478 DOI: 10.3390/s23063249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Revised: 03/07/2023] [Accepted: 03/16/2023] [Indexed: 06/19/2023]
Abstract
A highly sensitive room-temperature graphene photothermoelectric terahertz detector, with an efficient optical coupling structure of asymmetric logarithmic antenna, was fabricated by planar micro-nano processing technology and two-dimensional material transfer techniques. The designed logarithmic antenna acts as an optical coupling structure to effectively localize the incident terahertz waves at the source end, thus forming a temperature gradient in the device channel and inducing the thermoelectric terahertz response. At zero bias, the device has a high photoresponsivity of 1.54 A/W, a noise equivalent power of 19.8 pW/Hz1/2, and a response time of 900 ns at 105 GHz. Through qualitative analysis of the response mechanism of graphene PTE devices, we find that the electrode-induced doping of graphene channel near the metal-graphene contacts play a key role in the terahertz PTE response. This work provides an effective way to realize high sensitivity terahertz detectors at room temperature.
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Affiliation(s)
- Liang Hong
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Lanxia Wang
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Miao Cai
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yifan Yao
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xuguang Guo
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yiming Zhu
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China
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16
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Li Z, Jia B, Fang S, Li Q, Tian F, Li H, Liu R, Liu Y, Zhang L, Liu S(F, Liu B. Pressure-Tuning Photothermal Synergy to Optimize the Photoelectronic Properties in Amorphous Halide Perovskite Cs 3 Bi 2 I 9. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205837. [PMID: 36581471 PMCID: PMC9951572 DOI: 10.1002/advs.202205837] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 11/12/2022] [Indexed: 06/17/2023]
Abstract
Effective modification of the structure and properties of halide perovskites via the pressure engineering strategy has attracted enormous interest in the past decade. However, sufficient effort and insights regarding the potential properties and applications of the high-pressure amorphous phase are still lacking. Here, the superior and tunable photoelectric properties that occur in the pressure-induced amorphization process of the halide perovskite Cs3 Bi2 I9 are demonstrated. With increasing pressure, the photocurrent with xenon lamp illumination exhibits a rapid increase and achieves an almost five orders of magnitude increment compared to its initial value. Impressively, a broadband photoresponse from 520 to 1650 nm with an optimal responsivity of 6.81 mA W-1 and fast response times of 95/96 ms at 1650 nm is achieved upon successive compression. The high-gain, fast, broadband, and dramatically enhanced photoresponse properties of Cs3 Bi2 I9 are the result of comprehensive photoconductive and photothermoelectric mechanisms, which are associated with enhanced orbital coupling caused by an increase in BiI interactions in the [BiI6 ]3- cluster, even in the amorphous state. These findings provide new insights for further exploring the potential properties and applications of amorphous perovskites.
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Affiliation(s)
- Zonglun Li
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Binxia Jia
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Sixue Fang
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Quanjun Li
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Fuyu Tian
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and EngineeringJilin UniversityChangchun130012P. R. China
| | - Haiyan Li
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Ran Liu
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and EngineeringJilin UniversityChangchun130012P. R. China
| | - Shengzhong (Frank) Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Bingbing Liu
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
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17
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Xie Z, Wang J, Yeow JTW. Flexible Multi-Element Photothermoelectric Detectors Based on Spray-Coated Graphene/Polyethylenimine Composites for Nondestructive Testing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:5921-5930. [PMID: 36649212 DOI: 10.1021/acsami.2c20487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Photothermoelectric (PTE) detectors receive much attention owing to the superiority of self-powered, non-bias input, and friendly ambient environments, facilitating abundant prospective applications in industrial inspection, medical diagnostics, homeland security, and wearable Internet of Things. However, many drawbacks of currently applicable PTE materials, involving unstable material oxidation, an uncontrollable fabrication process, and unscalable manufacturing, hinder the development of industrial productions. Herein, we demonstrate a vertical graphene/polyethylenimine composite PTE detector fabricated with an optimized spray-coating method in compact alignment on various surfaces, achieving a significant photovoltage detectivity and responsivity of 6.05 × 107 cm Hz1/2 W-1 and 2.7 V W-1 response at a 973 K blackbody temperature radiation (2.98 μm peak wavelength). In addition, the long-term stability and resistible concave and convex bending flexibility are presented. Furthermore, a nondestructive testing system is established and verified through high-spatial-resolution and high-penetration illustration. Overall, the spray-coated and flexible PTE graphene/polyethylenimine multi-elements with broadband infrared absorption compatibility and stable energy conversion are promising candidates for future health monitoring and wearable electronics.
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Affiliation(s)
- Zhemiao Xie
- Advanced Micro-/Nano-Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, OntarioN2L 3G1, Canada
| | - Jiaqi Wang
- Advanced Micro-/Nano-Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, OntarioN2L 3G1, Canada
| | - John T W Yeow
- Advanced Micro-/Nano-Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, OntarioN2L 3G1, Canada
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18
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Wang S, Yang Z, Wang D, Tan C, Yang L, Wang Z. Strong Anisotropic Two-Dimensional In 2Se 3 for Light Intensity and Polarization Dual-Mode High-Performance Detection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3357-3364. [PMID: 36599121 DOI: 10.1021/acsami.2c19660] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Detecting the light from different freedom is of great significance to gain more information. Two-dimensional (2D) materials with low intrinsic carrier concentration and highly tunable electronic structure have been considered as the promising candidate for future room-temperature multi-functional photodetectors. However, current investigations mainly focus on intensity-sensitive detection; the multi-dimensional photodetection such as polarization-sensitive photodetection is still in its early stage. Herein, the intensity- and polarization-sensitive photodetection based on α-In2Se3 is studied. By using angle-resolved polarized Raman spectroscopy, it is demonstrated that α-In2Se3 shows an anisotropic phonon vibration property indicating its asymmetric structure. The α-In2Se3-based photodetector has a photoelectric performance with a responsivity of 1936 A/W and a specific detectivity of 2.1 × 1013 Jones under 0.2 mW/cm2 power density at 400 nm. Moreover, by studying the polarized angle-resolved photoelectrical effect, it is found that the ratio of maximum and minimum photocurrent (dichroic ratio) reaches 1.47 at 650 nm suggesting good polarization-sensitive detection. After post-annealing, α-In2Se3 in situ converts to β-In2Se3 which has similar in-plane anisotropic crystallinity and exhibits a dichroic ratio of 1.41. It is found that the responsivity of β-In2Se3 is 6 A/W, much lower than that of α-In2Se3. The high-performance light intensity- and polarization-detection of α-In2Se3 enlarges the 2D anisotropic materials family and provides new opportunities for future dual-mode photodetection.
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Affiliation(s)
- Shaoyuan Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Zhihao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Dong Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
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19
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Gao Y, Liao J, Chen H, Ning H, Wu Q, Li Z, Wang Z, Zhang X, Shao M, Yu Y. High Performance Polarization-Resolved Photodetectors Based on Intrinsically Stretchable Organic Semiconductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204727. [PMID: 36398626 PMCID: PMC9839839 DOI: 10.1002/advs.202204727] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Revised: 11/02/2022] [Indexed: 06/16/2023]
Abstract
Polarization-sensitive photodetectors based on anisotropic semiconductors sense both the intensity and polarization state information without extra optical components. Here, a self-powered organic photodetector (OPD) composed of intrinsically stretchable polymer donor PNTB6-Cl and non-fullerene acceptor Y6 is reported. The PNTB6-Cl:Y6 photoactive film accommodates a remarkable 100% strain without fracture, exhibiting a high optical anisotropy of 1.8 after strain alignment. The resulting OPD not only shows an impressive faint-light detection capability (high spectral responsivity of 0.45 A W-1 and high specific detectivity of 1012 Jones), but also has a high anisotropic responsivity ratio of 1.42 under the illumination of parallel and traversed polarized light. To the best of the authors' knowledge, both the detector performance and polarization features are among the best-performing OPDs and polarization-sensitive photodetectors. As a proof-of-concept, polarization-sensitive OPDs are also utilized to set up a polarimetric imaging system and full-Stokes polarimeter. This work explores the potential of highly stretchable organic semiconductors for state-of-art polarization imaging and spectroscopy applications.
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Affiliation(s)
- Yerun Gao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jiawen Liao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haoyu Chen
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haijun Ning
- Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of GuangdongShantou UniversityGuangdong515063P. R. China
| | - Qinghe Wu
- Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of GuangdongShantou UniversityGuangdong515063P. R. China
| | - Zhilin Li
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Zhenye Wang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xinliang Zhang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Ming Shao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yu Yu
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
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20
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Hu Y, Yang H, Huang J, Zhang X, Tan B, Shang H, Zhang S, Feng W, Zhu J, Zhang J, Shuai Y, Jia D, Zhou Y, Hu P. Flexible Optical Synapses Based on In 2Se 3/MoS 2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55839-55849. [PMID: 36511344 DOI: 10.1021/acsami.2c19097] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In2Se3/MoS2 heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In2Se3/MoS2 heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In2Se3/MoS2 heterojunctions under strain have been studied systematically. The ΔEPSC of the In2Se3/MoS2 synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In2Se3/MoS2 device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.
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Affiliation(s)
- Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Hongying Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Jingtao Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Xin Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Biying Tan
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Huiming Shang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Shichao Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin150040, China
| | - Jingchuan Zhu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Dechang Jia
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Yu Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
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21
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Guo X, Lu X, Jiang P, Bao X. SrTiO 3 /CuNi-Heterostructure-Based Thermopile for Sensitive Human Radiation Detection and Noncontact Human-Machine Interaction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204355. [PMID: 35817476 DOI: 10.1002/adma.202204355] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Revised: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Noncontact interactive technology provides an intelligent solution to mitigate public health risks from cross-infection in the era of COVID-19. The utilization of human radiation as a stimulus source is conducive to the implementation of low-power, robust noncontact human-machine interaction. However, the low radiation intensity emitted by humans puts forward a high demand for photodetection performance. Here, a SrTiO3-x /CuNi-heterostructure-based thermopile is constructed, which features the combination of high thermoelectric performance and near-unity long-wave infrared absorption, to realize the self-powered detection of human radiation. The response level of this thermopile to human radiation is orders of magnitude higher than those of low-dimensional-materials-based photothermoelectric detectors and even commercial thermopiles. Furthermore, a touchless input device based on the thermopile array is developed, which can recognize hand gestures, numbers, and letters in real-time. This work offers a reliable strategy to integrate the spontaneous human radiation into noncontact human-machine interaction systems.
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Affiliation(s)
- Xiaohan Guo
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Lu
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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22
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Wang F, Liu Z, Zhang T, Long M, Wang X, Xie R, Ge H, Wang H, Hou J, Gu Y, Hu X, Song Z, Wang S, Dong Q, Liao K, Tu Y, Han T, Li F, Zhang Z, Hou X, Wang S, Li L, Zhang X, Zhao D, Shan C, Shan L, Hu W. Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203283. [PMID: 35972840 DOI: 10.1002/adma.202203283] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Revised: 07/21/2022] [Indexed: 06/15/2023]
Abstract
Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14 W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010 cm Hz1/2 W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.
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Affiliation(s)
- Fang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhiyi Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xiuxiu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haonan Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hao Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jie Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xin Hu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Ze Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Qingsong Dong
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Kecai Liao
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yubing Tu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Zongyuan Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xingyuan Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Shaoliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130021, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
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23
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Zhang X, Yao Y, Liang L, Niu X, Wu J, Luo J. Self-Assembly of 2D Hybrid Double Perovskites on 3D Cs 2 AgBiBr 6 Crystals towards Ultrasensitive Detection of Weak Polarized Light. Angew Chem Int Ed Engl 2022; 61:e202205939. [PMID: 35654743 DOI: 10.1002/anie.202205939] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2022] [Indexed: 12/22/2022]
Abstract
We report the self-assembly of 2D double perovskite (BLA)2 CsAgBiBr7 (BLA=benzylammonium) on 3D Cs2 AgBiBr6 crystals, providing the first demonstration of polarization-sensitive photodetection using lead-free double perovskite heterocrystals (HCs). The (BLA)2 CsAgBiBr7 /Cs2 AgBiBr6 HC successfully combines the anisotropy of 2D double perovskites with the well-defined interface provided by heterogeneous integration. Driven by the built-in electric field in junction, photodetectors of HCs exhibit unique polarization dependence of zero-bias photocurrent with a large anisotropy ratio up to 9, which is 6 times amplified as compared to the pristine 2D (BLA)2 CsAgBiBr7 . More importantly, the present devices can remain polarization-sensitive with incident light intensity down to the nW cm-2 level. Our study on lead-free hybrid perovskite HCs marks a step toward establishing robust material foundations for fundamental scientific investigations and the development of optoelectronic devices.
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Affiliation(s)
- Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunpeng Yao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Lishan Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Xinyi Niu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, 330022, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
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24
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Dai M, Wang C, Qiang B, Wang F, Ye M, Han S, Luo Y, Wang QJ. On-chip mid-infrared photothermoelectric detectors for full-Stokes detection. Nat Commun 2022; 13:4560. [PMID: 35931776 PMCID: PMC9356042 DOI: 10.1038/s41467-022-32309-w] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 07/25/2022] [Indexed: 11/09/2022] Open
Abstract
On-chip polarimeters are highly desirable for the next-generation ultra-compact optical and optoelectronic systems. Polarization-sensitive photodetectors relying on anisotropic absorption of natural/artificial materials have emerged as a promising candidate for on-chip polarimeters owing to their filterless configurations. However, these photodetectors can only be applied for detection of either linearly or circularly polarized light, not applicable for full-Stokes detection. Here, we propose and demonstrate three-ports polarimeters comprising on-chip chiral plasmonic metamaterial-mediated mid-infrared photodetectors for full-Stokes detection. By manipulating the spatial distribution of chiral metamaterials, we could convert polarization-resolved absorptions to corresponding polarization-resolved photovoltages of three ports through the photothermoelectric effect. We utilize the developed polarimeter in an imaging demonstration showing reliable ability for polarization reconstruction. Our work provides an alternative strategy for developing polarization-resolved photodetectors with a bandgap-independent operation range in the mid-infrared.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore. .,Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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25
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Deng W, Dai M, Wang C, You C, Chen W, Han S, Han J, Wang F, Ye M, Zhu S, Cui J, Wang QJ, Zhang Y. Switchable Unipolar-Barrier Van der Waals Heterostructures with Natural Anisotropy for Full Linear Polarimetry Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203766. [PMID: 35749220 DOI: 10.1002/adma.202203766] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Revised: 06/12/2022] [Indexed: 06/15/2023]
Abstract
Polarization-resolved photodetection in a compact footprint is of great interest for ultraminiaturized polarimeters to be used in a wide range of applications. However, probing the states of polarization (SOP) in materials with natural anisotropy are usually weak, limited by the material's natural dichroism or diattenuation. Here, a twisted unipolar-barrier van der Waals heterostructure (vdWH) to construct a bias-switchable polarization detection for retrieval of full SOP (from 0 to 180°) for linear polarized incident light is reported. As a demonstration example, this study realizes the concept in a b-AsP/WS2 /b-AsP vdWH relying on the natural anisotropic properties of the materials without using additional plasmonic/metasurface nanostructures to realize linear polarimetry in the mid-infrared range. Polarimetric imaging is further demonstrated with the developed linear polarimetry by directly displaying the Jones-vector-described SOP distribution of certain target object. This method, with the capabilities of detecting full linear SOP, is promising for the next-generation on-chip miniaturized polarimeters.
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Affiliation(s)
- Wenjie Deng
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
- Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Mingjin Dai
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Congya You
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
- Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Wenduo Chen
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiayue Han
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Zhu
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jieyuan Cui
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qi Jie Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Centre for Disruptive Photonic Technologies, Division of Physics and Applied Physics School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yongzhe Zhang
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
- Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
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26
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Zhang X, Yao Y, Liang L, Niu X, Wu J, Luo J. Self‐Assembly of 2D Hybrid Double Perovskites on 3D Cs2AgBiBr6 Crystals towards Ultrasensitive Detection of Weak Polarized Light. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202205939] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Xinyuan Zhang
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Yunpeng Yao
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Lishan Liang
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Xinyi Niu
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Jianbo Wu
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Junhua Luo
- Chinese Academy of Sciences Crystalline Materials Yangqiao West Rd #155 350002 Fuzhou CHINA
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27
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Zhen WL, Miao WT, Zhu WL, Zhang CJ, Zhu WK. Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta 2Ni 3Se 8. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:255303. [PMID: 35366657 DOI: 10.1088/1361-648x/ac638b] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 04/01/2022] [Indexed: 06/14/2023]
Abstract
In this paper, we report the synthesis of high-quality Ta2Ni3Se8crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W-1) and specific detectivity (3.5 × 107Jones) and comparably short response time (τrise= 433 ms,τdecay= 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8makes it even more important in future electronic and optoelectronic applications.
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Affiliation(s)
- W L Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W T Miao
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - W L Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - C J Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
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