In-situ free-standing inorganic 2D Cs2PbI2Cl2 nanosheets for efficient self-powered photodetectors with carbon electrode

Inorganic two-dimensional (2D) perovskites possess excellent thermal stability and high charge mobility, making them an attractive choice for stable optoelectronic devices such as photodetectors (PDs). The formation of an appropriate inorganic 2D perovskite structure is of great importance to efficient PDs, especially to that of planar self-powered photovoltaic PDs featuring perpendicular charge transport channels. Herein, we implemented morphological engineering on wide bandgap inorganic 2D perovskite, Cs2PbI2Cl2, demonstrating a successful preparation of in-situ free-standing nanosheets structure with proper charge channels for photovoltaic type self-powered PDs. Compared with its counterpart with a nanoblock morphology, the 2D nanosheet Cs2PbI2Cl2 film exhibits enhanced charge mobility and purified Ruddlesden-Popper phase that can withstand high-energy electron beam radiation, accelerated thermal aging and long-term shelf storage. Sandwiching Cs2PbI2Cl2 nanosheet film in between tin oxide (SnO2) and polythiophene (P3HT) as electron and hole acceptors, respectively, the constructed photovoltaic type structure exhibits effective dissociation of excitons at the cascade type-II interface. The nanosheets enable lower dark current and more efficient charge collection than the nanoblock structure. As a result, the self-powered photodetectors with 2D Cs2PbI2Cl2 nanosheets deliver an outstanding responsivity of 698 mW/cm2 and a detectivity of 8.6×1012 Jones. The stable PDs can be applied to monitor ultraviolet irradiation in real outdoor conditions. Our work demonstrates the significant role of morphology tuning of 2D inorganic perovskite in stable, cost-effective and efficient photodetectors.

14.31% Power Conversion Efficiency of Sn-Based Perovskite Solar Cells via Efficient Reduction of Sn 4

The photoelectric properties of nontoxic Sn-based perovskite make it a promising alternative to toxic Pb-based perovskite. It has superior photovoltaic performance in comparison to other Pb-free counterparts. The facile oxidation of Sn2+ to Sn4+ presents a notable obstacle in the advancement of perovskite solar cells that utilize Sn, as it adversely affects their stability and performance. The study revealed the presence of a Sn4+ concentration on both the upper and lower surfaces of the perovskite layer. This discovery led to the adoption of a bi-interface optimization approach. A thin layer of Sn metal was inserted at the two surfaces of the perovskite layer. The implementation of this intervention yielded a significant decrease in the levels of Sn4+ and trap densities. The power conversion efficiency of the device was achieved at 14.31% through the optimization of carrier transportation. The device exhibited operational and long-term stability.

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared with those in a polar c-LED, are reported. With a higher applied voltage in the c-LED, decreasing response time and rising time improve device performance, but a longer recombination time degrades luminescence efficiency. By using an m-LED with a stronger carrier localization and a low polarization effect, shorter response, rising, and recombination times provide more efficient carrier injection, transport, relaxation, and recombination. These advantages can be realized for high-power and high-speed flash LEDs. In addition, with a weaker carrier localization and a polarization effect in the c-LED, the slower radiative and faster nonradiative decay rates at a larger applied voltage result in the slower total decay rate and the lower luminescence efficiency. For the m-LED at a higher applied voltage, a slow decreasing nonradiative decay rate is beneficial to device performance, while the more slowly decreasing and overall faster radiative decay rate of the m-LED than that of the c-LED demonstrates that a stronger carrier localization and a reduced polarization effect are efficient for carrier recombination. The resulting recombination dynamics are correlated with the device characteristics and performance of the c- and m-LEDs.

Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation

GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were investigated using numerical simulations. The temperature-dependent threshold current is found to become increasingly anomalous as the thickness or doping concentration of the barrier layer between QWs increases. For a properly chosen barrier thickness and doping concentration, very high T 0 of >10,000 K can be obtained. The anomalous temperature characteristics of these InGaN blue LDs are attributed to the increase of gain at the n-side QW with increasing temperature because of the thermally enhanced hole transport from the p-side to the n-side QW.

A systematic method for simulating total ionizing dose effects using the finite elements method

Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO 2 capacitors irradiated at total doses of 11.6 kRad ( SiO 2 ) and 58 kRad ( SiO 2 ). Drift-diffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.