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Wang H, Zhu X, Zhao Z, Wang X, Qian Z, Jiao L, Wang K, Li Y, Qi JJ, Asif M, Zheng Q, Xie L. In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope. NANO LETTERS 2024; 24:5498-5505. [PMID: 38619556 DOI: 10.1021/acs.nanolett.4c00620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.
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Affiliation(s)
- Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiaokai Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaoyang Zhao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinsheng Wang
- Institute of Biomedical Engineering, College of Life Sciences, Qingdao University, Qingdao 266071, China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun-Jie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Muhammad Asif
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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Luo X, Jiao Y, Li H, Liu Q, Liu J, Wang M, Liu Y. Impact of Carrier Gas Flow Rate on the Synthesis of Monolayer WSe 2 via Hydrogen-Assisted Chemical Vapor Deposition. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2190. [PMID: 38793257 PMCID: PMC11123087 DOI: 10.3390/ma17102190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Revised: 04/16/2024] [Accepted: 04/18/2024] [Indexed: 05/26/2024]
Abstract
Transition metal dichalcogenides (TMDs), particularly monolayer TMDs with direct bandgap properties, are key to advancing optoelectronic device technology. WSe2 stands out due to its adjustable carrier transport, making it a prime candidate for optoelectronic applications. This study explores monolayer WSe2 synthesis via H2-assisted CVD, focusing on how carrier gas flow rate affects WSe2 quality. A comprehensive characterization of monolayer WSe2 was conducted using OM (optical microscope), Raman spectroscopy, PL spectroscopy, AFM, SEM, XPS, HRTEM, and XRD. It was found that H2 incorporation and flow rate critically influence WSe2's growth and structural integrity, with low flow rates favoring precursor concentration for product formation and high rates causing disintegration of existing structures. This research accentuates the significance of fine-tuning the carrier gas flow rate for optimizing monolayer WSe2 synthesis, offering insights for fabricating monolayer TMDs like WS2, MoSe2, and MoS2, and facilitating their broader integration into optoelectronic devices.
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Affiliation(s)
| | | | | | | | | | | | - Yong Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, International School of Materials Science and Engineering (ISMSE), State Wuhan University of Technology, Wuhan 430070, China; (X.L.); (Y.J.); (H.L.); (Q.L.); (J.L.); (M.W.)
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3
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Chin HT, Wang DC, Wang H, Muthu J, Khurshid F, Chen DR, Hofmann M, Chuang FC, Hsieh YP. Confined VLS Growth of Single-Layer 2D Tungsten Nitrides. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1705-1711. [PMID: 38145463 DOI: 10.1021/acsami.3c13286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/26/2023]
Abstract
Two-dimensional (2D) metal nitrides have garnered significant interest due to their potential applications in future electronics and quantum systems. However, the synthesis of such materials with sufficient uniformity and at relevant scales remains an unaddressed challenge. This study demonstrates the potential of confined growth to control and enhance the morphology of 2D metal nitrides. By restricting the reaction volume of vapor-liquid-solid reactions, an enhanced precursor concentration was achieved that reduces the nucleation density, resulting in larger grain sizes and suppression of multilayer growth. Detailed characterization reveals the importance of balancing the energetic and kinetic aspects of tungsten nitride formation toward this ability. The introduction of a promoter enabled the realization of large-scale, single-layer tungsten nitride with a uniform and high interfacial quality. Finally, our advance in morphology control was applied to the production of edge-enriched 2D tungsten nitrides with significantly enhanced hydrogen evolution ability, as indicated by an unprecedented Tafel slope of 55 mV/dec.
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Affiliation(s)
- Hao-Ting Chin
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Deng-Chi Wang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Hao Wang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Jeyavelan Muthu
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
| | - Farheen Khurshid
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Ding-Rui Chen
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
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4
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Quan S, Li L, Guo S, Zhao X, Weller D, Wang X, Fu S, Liu R, Hao Y. SnS 2/MoS 2 van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59592-59599. [PMID: 38104345 DOI: 10.1021/acsami.3c13004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
Photoresponsivity is a fundamental parameter used to quantify the ability of photoelectric conversion of a photodetector device. High-responsivity photodetectors are essential for numerous optoelectronic applications. Due to the strong light-matter interactions and the high carrier mobility, two-dimensional (2D) materials are promising candidates for the next-generation photodetectors. However, poor light absorption, lack of photoconductive gain, and the interfacial recombination lead to the relatively low responsivity of 2D photodetectors. The photogating effect, which extends the lifetime of photoexcited carriers, provides a simple approach to enhance responsivity in photodetector devices. Here, the O2 plasma treatment introduced surface traps on the SnS2 surface, leading to a gate-tunable photogating effect in SnS2/MoS2 heterojunctions. The heterojunction device exhibits an ultrahigh responsibility of up to 28 A/W. Moreover, the photodetector possesses a wide spectral photoresponse spanning from 300 to 1100 nm and a high specific detectivity (D*) of 4 × 1011 Jones under a 532 nm laser at VDS = 1 V. These results demonstrate that O2 plasma treatment is an efficient and simple avenue to achieve photogating effects, which can be employed to enhance the performance of van der Waals heterostructure photodetector devices and make them suitable for future integration into advanced electronic and optoelectronic systems.
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Affiliation(s)
- Sufeng Quan
- School of Information Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Luyang Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Shuai Guo
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Xiaoyu Zhao
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Duisburg 47057, Germany
| | - Xuefeng Wang
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Shiyou Fu
- School of Information Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209, China
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Ruibin Liu
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
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5
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Suzuki H, Kishibuchi M, Misawa M, Shimogami K, Ochiai S, Kokura T, Liu Y, Hashimoto R, Liu Z, Tsuruta K, Miyata Y, Hayashi Y. Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires. ACS NANO 2023; 17:9455-9467. [PMID: 37127554 DOI: 10.1021/acsnano.3c01608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for next-generation optoelectronic devices; they can also provide opportunities for further advances in physics. Structuring 2D TMDC sheets as nanoribbons has tremendous potential for electronic state modification. However, a bottom-up synthesis of long TMDC nanoribbons with high monolayer selectivity on a large scale has not yet been reported yet. In this study, we successfully synthesized long WxOy nanowires and grew monolayer WS2 nanoribbons on their surface. The supply of source atoms from a vapor-solid bilayer and chemical reaction at the atomic-scale interface promoted a self-limiting growth process. The developed method exhibited a high monolayer selection yield on a large scale and enabled the growth of long (∼100 μm) WS2 nanoribbons with electronic properties characterized by optical spectroscopy and electrical transport measurements. The produced nanoribbons were isolated from WxOy nanowires by mechanical exfoliation and used as channels for field-effect transistors. The findings of this study can be used in future optoelectronic device applications and advanced physics research.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Misaki Kishibuchi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kazuma Shimogami
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Soya Ochiai
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Takahiro Kokura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryoki Hashimoto
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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