1
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Park J, Han HS. Organoborane Se and Te Precursors for Controlled Modulation of Reactivity in Nanomaterial Synthesis. ACS NANO 2024. [PMID: 38842500 DOI: 10.1021/acsnano.3c13159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
To exploit the distinctive optoelectrical properties of nanomaterials, precise control over the size, morphology, and interface structure is essential. Achieving a controlled synthesis demands precursors with tailored reactivity and optimal reaction temperatures. Here, we introduce organoborane-based selenium and tellurium precursors borabicyclononane-selenol (BBN-SeH) and tellurol (BBN-TeH). The reactivity of these precursors can be modified by commercially available additives, covering a wide range of intermediate reactivity and filling significant reactivity gaps in existing options. By allowing systematic adjustment of growth conditions, they achieve the controlled growth of quantum dots of various sizes and materials. Operating via a surface-assisted conversion mechanism, these precursors rely on surface coordination for activation and undergo quantitative deposition on coordinating surfaces. These properties allow precise control over the radial distribution and density of different chalcogenide atoms within the nanoparticles. Diborabicyclononanyl selane ((BBN)2Se), an intermediate from the BBN-SeH synthesis, can also serve as a selenium precursor. While BBN-SeH suppresses nucleation, (BBN)2Se exhibits efficient nucleation under specific conditions. By leveraging these distinct activation behaviors, we achieved a controlled synthesis of thermally stable nanoplates with different thicknesses. This study not only bridges critical reactivity gaps but also provides a systematic methodology for precise nanomaterial synthesis.
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Affiliation(s)
- Joonhyuck Park
- Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States
- Department of Medical Life Sciences and Department of Biomedicine & Health Sciences, College of Medicine, The Catholic University of Korea, 222 Banpo-daero, Seocho-gu, Seoul, 06591, Republic of Korea
| | - Hee-Sun Han
- Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States
- Carl R. Woese Institute for Genomic Biology, University of Illinois at Urbana-Champaign, 1206 W Gregory Drive, Urbana, Illinois 61801, United States
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2
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Gabbett C, Kelly AG, Coleman E, Doolan L, Carey T, Synnatschke K, Liu S, Dawson A, O'Suilleabhain D, Munuera J, Caffrey E, Boland JB, Sofer Z, Ghosh G, Kinge S, Siebbeles LDA, Yadav N, Vij JK, Aslam MA, Matkovic A, Coleman JN. Understanding how junction resistances impact the conduction mechanism in nano-networks. Nat Commun 2024; 15:4517. [PMID: 38806479 PMCID: PMC11133347 DOI: 10.1038/s41467-024-48614-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 05/02/2024] [Indexed: 05/30/2024] Open
Abstract
Networks of nanowires, nanotubes, and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the resistance between the particles, often referred to as the junction resistance. Minimising the junction resistance has proven to be challenging, partly because it is difficult to measure. Here, we develop a simple model for electrical conduction in networks of 1D or 2D nanomaterials that allows us to extract junction and nanoparticle resistances from particle-size-dependent DC network resistivity data. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ω for silver nanosheets to 24 GΩ for WS2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be obtained simultaneously from AC impedance spectra of semiconducting nanosheet networks. Through our model, we use the impedance data to directly link the high mobility of aligned networks of electrochemically exfoliated MoS2 nanosheets (≈ 7 cm2 V-1 s-1) to low junction resistances of ∼2.3 MΩ. Temperature-dependent impedance measurements also allow us to comprehensively investigate transport mechanisms within the network and quantitatively differentiate intra-nanosheet phonon-limited bandlike transport from inter-nanosheet hopping.
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Affiliation(s)
- Cian Gabbett
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Adam G Kelly
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- i3N/CENIMAT, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516, Caparica, Portugal
| | - Emmet Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Tian Carey
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Shixin Liu
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Anthony Dawson
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Domhnall O'Suilleabhain
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Jose Munuera
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- Department of Physics, Faculty of Sciences, University of Oviedo, C/ Leopoldo Calvo Sotelo, 18, 33007, Oviedo, Asturias, Spain
| | - Eoin Caffrey
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - John B Boland
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Goutam Ghosh
- Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, NL-2629, HZ, Delft, The Netherlands
| | - Sachin Kinge
- Materials Research & Development, Toyota Motor Europe, B1930, Zaventem, Belgium
| | - Laurens D A Siebbeles
- Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, NL-2629, HZ, Delft, The Netherlands
| | - Neelam Yadav
- Department of Electronic & Electrical Engineering, Trinity College Dublin 2, Dublin 2, Ireland
| | - Jagdish K Vij
- Department of Electronic & Electrical Engineering, Trinity College Dublin 2, Dublin 2, Ireland
| | - Muhammad Awais Aslam
- Chair of Physics, Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria
| | - Aleksandar Matkovic
- Chair of Physics, Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland.
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3
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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4
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Zhang K, Zhang T, You J, Zheng X, Zhao M, Zhang L, Kong J, Luo Z, Huang S. Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307587. [PMID: 38084456 DOI: 10.1002/smll.202307587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/07/2023] [Indexed: 05/12/2024]
Abstract
2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.
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Affiliation(s)
- Kenan Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, Nanshan, Shenzhen, 518057, China
| | - Shaoming Huang
- Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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5
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Carey T, Maughan J, Doolan L, Caffrey E, Garcia J, Liu S, Kaur H, Ilhan C, Seyedin S, Coleman JN. Knot Architecture for Biocompatible and Semiconducting 2D Electronic Fiber Transistors. SMALL METHODS 2024:e2301654. [PMID: 38602193 DOI: 10.1002/smtd.202301654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 03/26/2024] [Indexed: 04/12/2024]
Abstract
Wearable devices have generally been rigid due to their reliance on silicon-based technologies, while future wearables will utilize flexible components for example transistors within microprocessors to manage data. Two-dimensional (2D) semiconducting flakes have yet to be investigated in fiber transistors but can offer a route toward high-mobility, biocompatible, and flexible fiber-based devices. Here, the electrochemical exfoliation of semiconducting 2D flakes of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2) is shown to achieve homogeneous coatings onto the surface of polyester fibers. The high aspect ratio (>100) of the flake yields aligned and conformal flake-to-flake junctions on polyester fibers enabling transistors with mobilities μ ≈1 cm2 V-1 s-1 and a current on/off ratio, Ion/Ioff ≈102-104. Furthermore, the cytotoxic effects of the MoS2 and WSe2 flakes with human keratinocyte cells are investigated and found to be biocompatible. As an additional step, a unique transistor 'knot' architecture is created by leveraging the fiber diameter to establish the length of the transistor channel, facilitating a route to scale down transistor channel dimensions (≈100 µm) and utilize it to make a MoS2 fiber transistor with a human hair that achieves mobilities as high as μ ≈15 cm2 V-1 s-1.
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Affiliation(s)
- Tian Carey
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Jack Maughan
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Eoin Caffrey
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - James Garcia
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Shixin Liu
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Harneet Kaur
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Cansu Ilhan
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Shayan Seyedin
- School of Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
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6
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Zhao M, Casiraghi C, Parvez K. Electrochemical exfoliation of 2D materials beyond graphene. Chem Soc Rev 2024; 53:3036-3064. [PMID: 38362717 DOI: 10.1039/d3cs00815k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
After the discovery of graphene in 2004, the field of atomically thin crystals has exploded with the discovery of thousands of 2-dimensional materials (2DMs) with unique electronic and optical properties, by making them very attractive for a broad range of applications, from electronics to energy storage and harvesting, and from sensing to biomedical applications. In order to integrate 2DMs into practical applications, it is crucial to develop mass scalable techniques providing crystals of high quality and in large yield. Electrochemical exfoliation is one of the most promising methods for producing 2DMs, as it enables quick and large-scale production of solution processable nanosheets with a thickness well below 10 layers and lateral size above 1 μm. Originally, this technique was developed for the production of graphene; however, in the last few years, this approach has been successfully extended to other 2DMs, such as transition metal dichalcogenides, black phosphorous, hexagonal boron nitride, MXenes and many other emerging 2D materials. This review first provides an introduction to the fundamentals of electrochemical exfoliation and then it discusses the production of each class of 2DMs, by introducing their properties and giving examples of applications. Finally, a summary and perspective are given to address some of the challenges in this research area.
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Affiliation(s)
- Minghao Zhao
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
| | - Cinzia Casiraghi
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
| | - Khaled Parvez
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
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7
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Morabito F, Synnatschke K, Mehew JD, Varghese S, Sayers CJ, Folpini G, Petrozza A, Cerullo G, Tielrooij KJ, Coleman J, Nicolosi V, Gadermaier C. Long lived photogenerated charge carriers in few-layer transition metal dichalcogenides obtained from liquid phase exfoliation. NANOSCALE ADVANCES 2024; 6:1074-1083. [PMID: 38356640 PMCID: PMC10863726 DOI: 10.1039/d3na00862b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 11/26/2023] [Indexed: 02/16/2024]
Abstract
Semiconducting transition metal dichalcogenides are important optoelectronic materials thanks to their intense light-matter interaction and wide selection of fabrication techniques, with potential applications in light harvesting and sensing. Crucially, these applications depend on the lifetimes and recombination dynamics of photogenerated charge carriers, which have primarily been studied in monolayers obtained from labour-intensive mechanical exfoliation or costly chemical vapour deposition. On the other hand, liquid phase exfoliation presents a high throughput and cost-effective method to produce dispersions of mono- and few-layer nanosheets. This approach allows for easy scalability and enables the subsequent processing and formation of macroscopic films directly from the liquid phase. Here, we use transient absorption spectroscopy and spatiotemporally resolved pump-probe microscopy to study the charge carrier dynamics in tiled nanosheet films of MoS2 and WS2 deposited from the liquid phase using an adaptation of the Langmuir-Schaefer technique. We find an efficient photogeneration of charge carriers with lifetimes of several nanoseconds, which we ascribe to stabilisation at nanosheet edges. These findings provide scope for photocatalytic and photodetector applications, where long-lived charge carriers are crucial, and suggest design strategies for photovoltaic devices.
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Affiliation(s)
- Floriana Morabito
- Area Science Park Basovizza S.S. 14 Km 163.5 34149 Trieste Italy
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
- CNR-IOM, Consiglio Nazionale delle Ricerche Istituto Officina dei Materiali Trieste Italy
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
| | - Sebin Varghese
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
| | - Charles James Sayers
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Giulia Folpini
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
| | - Annamaria Petrozza
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
| | - Giulio Cerullo
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
- TU Eindhoven, Department of Applied Physics Den Dolech 2 5612 AZ Eindhoven The Netherlands
| | - Jonathan Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Valeria Nicolosi
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Christoph Gadermaier
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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9
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Joung SY, Yim H, Lee D, Shim J, Yoo SY, Kim YH, Kim JS, Kim H, Hyeong SK, Kim J, Noh YY, Bae S, Park MJ, Choi JW, Lee CH. All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric. ACS NANO 2024; 18:1958-1968. [PMID: 38181200 DOI: 10.1021/acsnano.3c06972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2024]
Abstract
Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10-11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.
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Affiliation(s)
- Su-Yeon Joung
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Haena Yim
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Donghun Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jaehyung Shim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - So Yeon Yoo
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Yeon Ho Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jin Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Hyunjun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seok-Ki Hyeong
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
| | - Junhee Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Sukang Bae
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54896, Republic of Korea
| | - Myung Jin Park
- National Institute for Nanomaterials Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea
| | - Ji-Won Choi
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
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10
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Gabbett C, Doolan L, Synnatschke K, Gambini L, Coleman E, Kelly AG, Liu S, Caffrey E, Munuera J, Murphy C, Sanvito S, Jones L, Coleman JN. Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography. Nat Commun 2024; 15:278. [PMID: 38177181 PMCID: PMC10767099 DOI: 10.1038/s41467-023-44450-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Accepted: 12/13/2023] [Indexed: 01/06/2024] Open
Abstract
Networks of solution-processed nanomaterials are becoming increasingly important across applications in electronics, sensing and energy storage/generation. Although the physical properties of these devices are often completely dominated by network morphology, the network structure itself remains difficult to interrogate. Here, we utilise focused ion beam - scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterise the morphology of printed nanostructured networks and their devices using nanometre-resolution 3D images. The influence of nanosheet/nanowire size on network structure in printed films of graphene, WS2 and silver nanosheets (AgNSs), as well as networks of silver nanowires (AgNWs), is investigated. We present a comprehensive toolkit to extract morphological characteristics including network porosity, tortuosity, specific surface area, pore dimensions and nanosheet orientation, which we link to network resistivity. By extending this technique to interrogate the structure and interfaces within printed vertical heterostacks, we demonstrate the potential of this technique for device characterisation and optimisation.
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Affiliation(s)
- Cian Gabbett
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Kevin Synnatschke
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Laura Gambini
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Emmet Coleman
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Adam G Kelly
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Shixin Liu
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Eoin Caffrey
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Jose Munuera
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- Department of Physics, Faculty of Sciences, University of Oviedo, C/ Leopoldo Calvo Sotelo, 18, 33007, Oviedo, Asturias, Spain
| | - Catriona Murphy
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Stefano Sanvito
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Lewys Jones
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Jonathan N Coleman
- School of Physics, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland.
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11
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Prakash S, Perrin H, Botto L. Buckling of a monolayer of platelike particles trapped at a fluid-fluid interface. Phys Rev E 2024; 109:014801. [PMID: 38366431 DOI: 10.1103/physreve.109.014801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 12/14/2023] [Indexed: 02/18/2024]
Abstract
Particles trapped at a fluid-fluid interface by capillary forces can form a monolayer that jams and buckles when subject to uniaxial compression. Here we investigate experimentally the buckling mechanics of monolayers of millimeter-sized rigid plates trapped at a planar fluid-fluid interface subject to uniaxial compression in a Langmuir trough. We quantified the buckling wavelength and the associated force on the trough barriers as a function of the degree of compression. To explain the observed buckling wavelength and forces in the two-dimensional (2D) monolayer, we consider a simplified system composed of a linear chain of platelike particles. The chain system enables us to build a theoretical model which is then compared to the 2D monolayer data. Both the experiments and analytical model show that the wavelength of buckling of a monolayer of platelike particles is of the order of the particle size, a different scaling from the one usually reported for monolayers of spheres. A simple model of buckling surface pressure is also proposed, and an analysis of the effect of the bending rigidity resulting from a small overlap between nanosheet particles is presented. These results can be applied to the modeling of the interfacial rheology and buckling dynamics of interfacial layers of 2D nanomaterials.
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Affiliation(s)
- Suriya Prakash
- Department of Process & Energy, Faculty of Mechanical Engineering, Delft University of Technology, 2628CB Delft, The Netherlands
| | - Hugo Perrin
- Department of Process & Energy, Faculty of Mechanical Engineering, Delft University of Technology, 2628CB Delft, The Netherlands
| | - Lorenzo Botto
- Department of Process & Energy, Faculty of Mechanical Engineering, Delft University of Technology, 2628CB Delft, The Netherlands
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12
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Sozen Y, Riquelme JJ, Xie Y, Munuera C, Castellanos-Gomez A. High-Throughput Mechanical Exfoliation for Low-Cost Production of van der Waals Nanosheets. SMALL METHODS 2023; 7:e2300326. [PMID: 37322554 DOI: 10.1002/smtd.202300326] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Revised: 05/11/2023] [Indexed: 06/17/2023]
Abstract
A method is presented for scaling up the production of flakes of van der Waals materials via mechanical exfoliation. Using a roll-to-roll setup and an automatized, massive parallel exfoliation process, adhesive tapes with a high density of nanosheets of van der Waals materials are produced. The technique allows for obtaining a good trade-off between large lateral size and excellent area scalability, while also maintaining low cost. The potential of the method is demonstrated through the successful fabrication of field effect transistors and flexible photodetectors in large batches. This low-cost method to produce large area films out of mechanically exfoliated flakes is very general, and it can be applied to a variety of substrates and van der Waals materials and, moreover, it can be used to combine different van der Waals materials on top of each other. Therefore, it is believed that this production method opens an interesting avenue for fabrication of low-cost devices while maintaining a good scalability and performance.
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Affiliation(s)
- Yigit Sozen
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
| | - Juan J Riquelme
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
| | - Yong Xie
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Carmen Munuera
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
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13
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Wei C, Roy A, Tripathi M, Aljarid AKA, Salvage JP, Roe SM, Arenal R, Boland CS. Exotic Electronic Properties of 2D Nanosheets Isolated from Liquid Phase Exfoliated Phyllosilicate Minerals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303570. [PMID: 37336515 DOI: 10.1002/adma.202303570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 05/31/2023] [Indexed: 06/21/2023]
Abstract
Spectrally inactive, electrically insulating, and chemically inert are adjectives broadly used to describe phyllosilicate minerals like mica and chlorite. Here, the above is disproved by demonstrating aqueous suspensions of liquid exfoliated nanosheets from five bulk mica types and chlorite schist. Nanosheet quality is confirmed via transmission electron and X-ray photoelectron spectroscopies, as well as electron diffraction. Through Raman spectroscopy, a previously unreported size- and layer-dependent spectral fingerprint is observed. When analyzing the high-yield suspensions (≈1 mg mL-1 ) through UV-vis spectroscopy, all phyllosilicates present bandgap (Eg ) narrowing from ≈7 eV in the bulk to ≈4 eV for monolayers. Unusually, the bandgap is inversely proportional to the areal size (A) of the nanosheets, measured via atomic force microscopy. Due to an unrecorded quantum confinement effect, nanosheet electronic properties scale toward semiconducting behavior (bandgap ≈3 eV) as nanosheet area increases. Furthermore, modeling X-ray diffraction spectra shows that the root cause of the initial bandgap narrowing is lattice relaxation. Finally, with their broad range of isomorphically substituted ions, phyllosilicate nanosheets show remarkable catalytic properties for hydrogen production.
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Affiliation(s)
- Cencen Wei
- School of Mathematical and Physical Sciences, University of Sussex, Brighton, BN1 9QH, UK
| | - Abhijit Roy
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
- Laboratorio de Microscopias Avanzadas (LMA), Universidad de Zaragoza, Calle Mariano Esquillor, Zaragoza, 50018, Spain
| | - Manoj Tripathi
- School of Mathematical and Physical Sciences, University of Sussex, Brighton, BN1 9QH, UK
| | - Adel K A Aljarid
- School of Mathematical and Physical Sciences, University of Sussex, Brighton, BN1 9QH, UK
| | - Jonathan P Salvage
- School of Pharmacy and Biomolecular Sciences, University of Brighton, Brighton, BN1 9PH, UK
| | - S Mark Roe
- School of Life Sciences, University of Sussex, Brighton, BN1 9QH, UK
| | - Raul Arenal
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
- Laboratorio de Microscopias Avanzadas (LMA), Universidad de Zaragoza, Calle Mariano Esquillor, Zaragoza, 50018, Spain
- ARAID Foundation, Zaragoza, 50018, Spain
| | - Conor S Boland
- School of Mathematical and Physical Sciences, University of Sussex, Brighton, BN1 9QH, UK
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