Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition

Edge-induced selective etching of bilayer MoS2 kirigami structures via a space-confined method

The controllable preparation of edge arrangements, particularly the customization of zigzag edges on demand, remains elusive. Here, a selective etching strategy to directly regulate Mo-zigzag and S-zigzag edges of MoS2 kirigami structures is proposed, paving the way for edge engineering of 2D materials and providing promising candidates for next-generation optoelectronics.

Lateral Heterostructures of Defect-Patterned MoS2 for Efficient Hydrogen Production

Defect engineering has demonstrated significant potential in optimizing the catalytic performance of molybdenum disulfide (MoS2) for hydrogen evolution reaction (HER). The simultaneous control of defect type, concentration, and spatial distribution within a single domain is crucial for accurate experimental detection and the establishment of structure-performance relationships, yet it remains challenging. Here, an efficient one-pot chemical vapor deposition (CVD) method is presented to synthesize monolayer defect-patterned MoS2 with alternating domains of varying Mo vacancy (VMo) concentrations, along with trace tellurium (Te) doping at the edges, forming MoS2-MoS2xTe2(1-x) lateral heterostructures (LHS). A single defect patterned LHS-based on-chip electrochemical microcell, utilizing graphene as an intermediate contact, is employed to extract HER activity and achieve higher reaction kinetic than pristine MoS2. These findings demonstrate that the synergistic effect of VMo and Te doping effectively activates more unsaturated sulfur atoms, facilitating proton adsorption and accelerating the HER process. This work enriches the point defect engineering and provides valuable insights for the design and synthesis of 2D semiconductor catalysts.

High-Entropy 1T-Phase Quantum Sheets of Transition-Metal Disulfides

Quantum sheets of transition-metal dichalcogenides (TMDs) are promising nanomaterials owing to the combination of both 2D nanosheets and quantum dots with distinctive properties. However, the quantum sheets usually possess semiconducting behavior associated with 2H phase, it remains challenging to produce 1T-phase quantum sheets due to the easy sliding of the basal plane susceptible to the small lateral sizes. Here, an efficient high-entropy strategy is developed to produce 1T-phase quantum sheets of transition-metal disulfides based on controllable introduction of multiple metal atoms with large size differences to retard the sliding of basal plane. The key is the topological conversion of in-plane ordered carbide laminates (i-MAX) compatible with multiple atoms to high-entropy transition-metal disulfides with high strains and 1T phase, which facilely triggers the fracture into 1T-phase quantum sheets with average size of 4.5 nm and thickness of 0.7 nm during the exfoliation process. Thus, the 1T-phase disulfide quantum sheets show high electrocatalytic activities for lithium polysulfides, achieving a good rate performance of 744 mAh g-1 at 5 C and a long cycle stability in lithium-sulfur batteries.

Lattice-guided growth of dense arrays of aligned transition metal dichalcogenide nanoribbons with high catalytic reactivity

Transition metal dichalcogenides (TMDs) exhibit unique properties and potential applications when reduced to one-dimensional (1D) nanoribbons (NRs), owing to quantum confinement and high edge densities. However, effective growth methods for self-aligned TMD NRs are still lacking. We demonstrate a versatile approach for lattice-guided growth of dense, aligned MoS2 NR arrays via chemical vapor deposition (CVD) on anisotropic sapphire substrates, without tailored surface steps. This method enables the synthesis of NRs with widths below 10 nanometers and longitudinal axis parallel to the zigzag direction, being also extensible to the growth of WS2 NRs and MoS2-WS2 heteronanoribbons. Growth is influenced by both substrate and CVD temperature, indicating the role of anisotropic precursor diffusion and substrate interaction. The 1D nature of the NRs was asserted by the observation of Coulomb blockade at low temperatures. Pronounced catalytic activity was observed at the edges of the NRs, indicating their promise for efficient catalysis.

Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals

Confinement of monolayers into quasi-1D atomically thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene is limited to bottom-up synthesis or lithographic patterning. In this study, a versatile and direct approach is introduced to exfoliate bulk van der Waals crystals as nanoribbons. Akin to the Scotch tape exfoliation method for producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, ReS2, and hBN. The nanoribbons are predominantly monolayer, single-crystalline, parallel-aligned, flat, and exhibit high aspect ratios. The role of confinement, strain, and edge configuration of these nanoribbons is observed in their electrical, magnetic, and optical properties. This versatile exfoliation technique provides a universal route for producing a variety of nanoribbon materials and supports the study of their fundamental properties and potential applications.

WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications

Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials are highly sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip integration. However, the subthreshold swing (SS) of FETs is constrained by the Boltzmann limit and cannot fall below 60 mV/dec, hindering sensor sensitivity enhancement. Additionally, the gate-leakage current of 2D material biosensors in liquid environments significantly increases, adversely affecting the detection accuracy and stability. Based on the principle of negative capacitance, this paper presents for the first time a two-dimensional material WSe2 negative capacitance field-effect transistor (NCFET) with a minimum subthreshold swing of 56 mV/dec in aqueous solution. The NCFET shows a significantly improved biosensor function. The pH detection sensitivity of the NCFET biosensor reaches 994 pH-1, nearly an order of magnitude higher than that of the traditional two-dimensional WSe2 FET biosensor. The Al2O3/HfZrO (HZO) bilayer dielectric in the NCFET not only contributes to negative capacitance characteristics in solution but also significantly reduces the leakage in solution. Utilizing an enzyme catalysis method, the WSe2 NCFET biosensor demonstrates a specific detection of glucose molecules, achieving a high sensitivity of 4800 A/A in a 5 mM glucose solution and a low detection limit (10-9 M). Further experiments also exhibit the ability of the biosensor to detect glucose in sweat.

Spatially Confined Microcells: A Path toward TMD Catalyst Design

With the ability to maximize the exposure of nearly all active sites to reactions, two-dimensional transition metal dichalcogenide (TMD) has become a fascinating new class of materials for electrocatalysis. Recently, electrochemical microcells have been developed, and their unique spatial-confined capability enables understanding of catalytic behaviors at a single material level, significantly promoting this field. This Review provides an overview of the recent progress in microcell-based TMD electrocatalyst studies. We first introduced the structural characteristics of TMD materials and discussed their site engineering strategies for electrocatalysis. Later, we comprehensively described two distinct types of microcells: the window-confined on-chip electrochemical microcell (OCEM) and the droplet-confined scanning electrochemical cell microscopy (SECCM). Their setups, working principles, and instrumentation were elucidated in detail, respectively. Furthermore, we summarized recent advances of OCEM and SECCM obtained in TMD catalysts, such as active site identification and imaging, site monitoring, modulation of charge injection and transport, and electrostatic field gating. Finally, we discussed the current challenges and provided personal perspectives on electrochemical microcell research.

Future prospects of high-entropy alloys as next-generation industrial electrode materials

The rapid advancement of electrochemical processes in industrial applications has increased the demand for high-performance electrode materials. High-entropy alloys (HEAs), a class of multicomponent alloys with unique properties, have emerged as potential electrode materials owing to their enhanced catalytic activity, superior stability, and tunable electronic structures. This review explores contemporary developments in HEA-based electrode materials for industrial applications and identifies their advantages and challenges as compared to conventional commercial electrode materials in industrial aspects. The importance of tuning the composition, crystal structure, different phase formations, thermodynamic and kinetic parameters, and surface morphology of HEAs and their derivatives to achieve the predicted electrochemical performance is emphasized in this review. Synthetic procedures for producing potential HEA electrode materials are outlined, and theoretical discussions provide a roadmap for recognizing the ideal electrode materials for specific electrochemical processes in an industrial setting. A comprehensive discussion and analysis of various electrochemical processes (HER, OER, ORR, CO2RR, MOR, AOR, and NRR) and electrochemical applications (batteries, supercapacitors, etc.) is included to appraise the potential ability of HEAs as an electrode material in the near future. Overall, the design and development of HEAs offer a promising pathway for advancing industrial electrode materials with improved performance, selectivity, and stability, potentially paving the way for the next generation of electrochemical technology.

Two-Dimensional Nanoarchitectonics for Two-Dimensional Materials: Interfacial Engineering of Transition-Metal Dichalcogenides

Transition-metal dichalcogenides (TMDs) have attracted increasing attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif band gap, and phase-transition ability. Even though TMDs have a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With modified properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.