1
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Katznelson S, Cohn B, Sufrin S, Amit T, Mukherjee S, Kleiner V, Mohapatra P, Patsha A, Ismach A, Refaely-Abramson S, Hasman E, Koren E. Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature. MATERIALS HORIZONS 2022; 9:1089-1098. [PMID: 35083477 DOI: 10.1039/d1mh01186c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
2D-semiconductors with strong light-matter interaction are attractive materials for integrated and tunable optical devices. Here, we demonstrate room-temperature wavelength multiplexing of the two-primary bright excitonic channels (Ab-, Bb-) in monolayer transition metal dichalcogenides (TMDs) arising from a dark exciton mediated transition. We present how tuning dark excitons via an out-of-plane electric field cedes the system equilibrium from one excitonic channel to the other, encoding the field polarization into wavelength information. In addition, we demonstrate how such exciton multiplexing is dictated by thermal-scattering by performing temperature dependent photoluminescence measurements. Finally, we demonstrate experimentally and theoretically how excitonic mixing can explain preferable decay through dark states in MoX2 in comparison with WX2 monolayers. Such field polarization-based manipulation of excitonic transitions can pave the way for novel photonic device architectures.
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Affiliation(s)
- Shaul Katznelson
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Bar Cohn
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Shmuel Sufrin
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Tomer Amit
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
| | - Vladimir Kleiner
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Pranab Mohapatra
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Avinash Patsha
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Sivan Refaely-Abramson
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Erez Hasman
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- The Nancy and Stephen Grand Technion Energy Program, Technion - Israel Institute of Technology, Haifa 3200003, Israel
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2
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Pelaez-Fernandez M, Lin YC, Suenaga K, Arenal R. Optoelectronic Properties of Atomically Thin Mo xW (1-x)S 2 Nanoflakes Probed by Spatially-Resolved Monochromated EELS. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3218. [PMID: 34947566 PMCID: PMC8708971 DOI: 10.3390/nano11123218] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2021] [Revised: 11/10/2021] [Accepted: 11/16/2021] [Indexed: 11/17/2022]
Abstract
Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1-x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.
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Affiliation(s)
- Mario Pelaez-Fernandez
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain;
- Laboratorio de Microscopias Avanzadas, Universidad de Zaragoza, Calle Mariano Esquillor, 50018 Zaragoza, Spain
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan;
| | - Kazu Suenaga
- The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Osaka 567-0047, Japan;
| | - Raul Arenal
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain;
- Laboratorio de Microscopias Avanzadas, Universidad de Zaragoza, Calle Mariano Esquillor, 50018 Zaragoza, Spain
- ARAID Fundation, 50018 Zaragoza, Spain
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3
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Pollmann E, Madauß L, Schumacher S, Kumar U, Heuvel F, Vom Ende C, Yilmaz S, Güngörmüs S, Schleberger M. Apparent differences between single layer molybdenum disulphide fabricated via chemical vapour deposition and exfoliation. NANOTECHNOLOGY 2020; 31:505604. [PMID: 33021241 DOI: 10.1088/1361-6528/abb5d2] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these requirements. However, for 2D materials prepared in this way it is generally assumed that they are of inferior quality in comparison to the exfoliated 2D materials commonly used in basic research. In this work we challenge this assumption and aim to quantify the differences in quality for the prototypical transition metal dichalcogenide MoS2. To this end single layers of MoS2 prepared by different techniques (exfoliation, grown by different chemical vapour deposition methods, transfer techniques and as vertical heterostructure with graphene) are studied by Raman and photoluminescence spectroscopy, complemented by atomic force microscopy. We demonstrate that as-prepared MoS2, directly grown on SiO2, differs from exfoliated MoS2 in terms of higher photoluminescence, lower electron concentration and increased strain. As soon as a water film is intercalated (e.g. by transfer) underneath the grown MoS2, in particular the (opto)electronic properties become practically identical to those of exfoliated MoS2. A comparison of the two most common precursors shows that the growth with MoO3 causes greater strain and/or defect density deviations than growth with ammonium heptamolybdate. As part of a heterostructure directly grown MoS2 interacts much stronger with the substrate and in this case an intercalated water film does not lead to the complete decoupling, which is typical for exfoliation or transfer. Our work shows that the supposedly poorer quality of grown 2D transition metal dichalcogenides is indeed a misconception.
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Affiliation(s)
- Erik Pollmann
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Lukas Madauß
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Simon Schumacher
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
- present affiliation: Technical Chemistry III - Faculty of Chemistry, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Uttam Kumar
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
- School of Materials Science and Engineering, University of New South Wales, AUS-2052 Sydney, Australia
| | - Flemming Heuvel
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Christina Vom Ende
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Sümeyra Yilmaz
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Sümeyra Güngörmüs
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
| | - Marika Schleberger
- Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, D-47057, Germany
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4
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Sitek J, Plocharski J, Pasternak I, Gertych AP, McAleese C, Conran BR, Zdrojek M, Strupinski W. Substrate-Induced Variances in Morphological and Structural Properties of MoS 2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO 2. ACS APPLIED MATERIALS & INTERFACES 2020; 12:45101-45110. [PMID: 32930568 PMCID: PMC7584339 DOI: 10.1021/acsami.0c06173] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2020] [Accepted: 09/15/2020] [Indexed: 06/11/2023]
Abstract
In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD). MoS2 synthesized on a three-dimensional (3D) substrate, that is, SiO2, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS2 on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS2 on SiO2 and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO2, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS2.
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Affiliation(s)
- Jakub Sitek
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Janusz Plocharski
- Faculty
of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, Poland
| | - Iwona Pasternak
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Arkadiusz P. Gertych
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Clifford McAleese
- AIXTRON
Ltd., Buckingway Business
Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom
| | - Ben R. Conran
- AIXTRON
Ltd., Buckingway Business
Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom
| | - Mariusz Zdrojek
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Wlodek Strupinski
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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5
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Modifying microscopic structures of MoS2 by high pressure and high temperature used in hydrogen evolution reaction. Electrochim Acta 2020. [DOI: 10.1016/j.electacta.2020.136868] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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6
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Murray C, van Efferen C, Jolie W, Fischer JA, Hall J, Rosch A, Krasheninnikov AV, Komsa HP, Michely T. Band Bending and Valence Band Quantization at Line Defects in MoS 2. ACS NANO 2020; 14:9176-9187. [PMID: 32602698 DOI: 10.1021/acsnano.0c04945] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS2, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at 5 K. Strong upward bending of valence and conduction bands toward the line defects is found for the 4|4E mirror twin boundary and island edges but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upward band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS2 mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS2. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary.
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Affiliation(s)
- Clifford Murray
- II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany
| | - Camiel van Efferen
- II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany
| | - Wouter Jolie
- II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany
- Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Münster D-48149, Germany
| | | | - Joshua Hall
- II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany
| | - Achim Rosch
- Institut für Theoretische Physik, Universität zu Köln, Cologne D-50937, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden D-01328, Germany
- Department of Applied Physics, Aalto University School of Science, Aalto FI-00076, Finland
| | - Hannu-Pekka Komsa
- Department of Applied Physics, Aalto University School of Science, Aalto FI-00076, Finland
- Microelectronics Research Unit, University of Oulu, Oulu FI-90014, Finland
| | - Thomas Michely
- II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany
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7
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Mo J, El Kazzi S, Mortelmans W, Mehta AN, Sergeant S, Smets Q, Asselberghs I, Huyghebaert C. Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides. NANOTECHNOLOGY 2020; 31:125604. [PMID: 31816615 DOI: 10.1088/1361-6528/ab5ffd] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this paper, we explore the impact of changing the growth conditions on the substrate surface during the metal-organic vapor phase epitaxy of 2D-transition metal dichalcogenides. We particularly study the growth of molybdenum disulfide (MoS2) on sapphire substrates at different temperatures. We show that a high temperature leads to a perfect epitaxial alignment of the MoS2 layer with respect to the sapphire substrate underneath, whereas a low temperature growth induces a 30° epitaxial alignment. This behavior is found to be related to the different sapphire top surface re-arrangement under H2S environment at different growth temperatures. Structural analyses conducted on the different samples confirm an improved layer quality at high temperatures. MoS2 channel-based metal-oxide-semiconductor field-effect transistors are fabricated showing improved device performance with channel layers grown at high temperature.
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Affiliation(s)
- Jiongjiong Mo
- IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. Zhejiang University, 310027 Hangzhou, People's Republic of China
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8
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Canton‐Vitoria R, Scharl T, Stergiou A, Cadranel A, Arenal R, Guldi DM, Tagmatarchis N. Ping-Pong Energy Transfer in Covalently Linked Porphyrin-MoS 2 Architectures. Angew Chem Int Ed Engl 2020; 59:3976-3981. [PMID: 31825548 PMCID: PMC7154652 DOI: 10.1002/anie.201914494] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2019] [Indexed: 11/25/2022]
Abstract
Molybdenum disulfide nanosheets covalently modified with porphyrin were prepared and fully characterized. Neither the porphyrin absorption nor its fluorescence was notably affected by covalent linkage to MoS2 . The use of transient absorption spectroscopy showed that a complex ping-pong energy-transfer mechanism, namely from the porphyrin to MoS2 and back to the porphyrin, operated. This study reveals the potential of transition-metal dichalcogenides in photosensitization processes.
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Affiliation(s)
- Ruben Canton‐Vitoria
- Theoretical and Physical Chemistry InstituteNational Hellenic Research Foundation48 Vassileos Constantinou Avenue11635AthensGreece
| | - Tobias Scharl
- Department of Chemistry and Pharmacy & interdisciplinary Center for Molecular Materials (ICMM)Friedrich-Alexander Universität Erlangen-NürnbergEgerlandstrasse 391058ErlangenGermany
| | - Anastasios Stergiou
- Theoretical and Physical Chemistry InstituteNational Hellenic Research Foundation48 Vassileos Constantinou Avenue11635AthensGreece
| | - Alejandro Cadranel
- Department of Chemistry and Pharmacy & interdisciplinary Center for Molecular Materials (ICMM)Friedrich-Alexander Universität Erlangen-NürnbergEgerlandstrasse 391058ErlangenGermany
- Universidad de Buenos AiresFacultad de Ciencias Exactas y NaturalesDepartamento de Química InorgánicaAnalítica y Química FísicaPabellón 2, Ciudad UniversitariaC1428EHABuenos AiresArgentina
- CONICET—Universidad de Buenos AiresInstituto de Química-Física de MaterialesMedio Ambiente y Energía (INQUIMAE)Pabellón 2, Ciudad UniversitariaC1428EHABuenos AiresArgentina
| | - Raul Arenal
- Laboratorio de Microscopias Avanzadas (LMA)Instituto de Nanociencia de Aragon (INA)U. ZaragozaMariano Esquillor s/n50018ZaragozaSpain
- Instituto de Ciencias de Materiales de AragonCSIC-U. de ZaragozaCalle Pedro Cerbuna 1250009ZaragozaSpain
- ARAID Foundation50018ZaragozaSpain
| | - Dirk M. Guldi
- Department of Chemistry and Pharmacy & interdisciplinary Center for Molecular Materials (ICMM)Friedrich-Alexander Universität Erlangen-NürnbergEgerlandstrasse 391058ErlangenGermany
| | - Nikos Tagmatarchis
- Theoretical and Physical Chemistry InstituteNational Hellenic Research Foundation48 Vassileos Constantinou Avenue11635AthensGreece
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9
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Verhagen T, Guerra VLP, Haider G, Kalbac M, Vejpravova J. Towards the evaluation of defects in MoS 2 using cryogenic photoluminescence spectroscopy. NANOSCALE 2020; 12:3019-3028. [PMID: 31834348 DOI: 10.1039/c9nr07246b] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Characterization of the type and density of defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) is important as the nature of these defects strongly influences the electronic and optical properties of the material, especially its photoluminescence (PL). Defect characterization is not as straightforward as it is for graphene films, where the D and D' Raman scattering modes easily indicate the density and type of defects in the graphene layer. Thus, in addition to the Raman scattering analysis, other spectroscopic techniques are necessary to perform detailed characterization of atomically thin TMD layers. We demonstrate that PL spectroscopy performed at liquid helium temperatures reveals the key fingerprints of defects in TMDs and hence provides valuable information about their origin and concentration. In our study, we address defects in chemical vapor deposition (CVD)-grown MoS2 monolayers. A significant difference is observed between the as-grown monolayers compared with the CVD-grown monolayers transferred onto a Si/SiO2 substrate, which contain extra defects due to the transfer process. We demonstrate that the temperature-dependent Raman and PL micro-spectroscopy techniques enable disentangling the contributions and locations of various defect types in TMD systems.
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Affiliation(s)
- Tim Verhagen
- Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic.
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10
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Canton‐Vitoria R, Scharl T, Stergiou A, Cadranel A, Arenal R, Guldi DM, Tagmatarchis N. Pingpong‐Energietransfer in kovalent verknüpften Porphyrin‐MoS
2
‐Architekturen. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.201914494] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Ruben Canton‐Vitoria
- Theoretical and Physical Chemistry Institute National Hellenic Research Foundation 48 Vassileos Constantinou Avenue 11635 Athens Griechenland
| | - Tobias Scharl
- Department of Chemistry and Pharmacy & interdisciplinary Center for Molecular Materials (ICMM) Friedrich-Alexander Universität Erlangen-Nürnberg Egerlandstr. 3 91058 Erlangen Deutschland
| | - Anastasios Stergiou
- Theoretical and Physical Chemistry Institute National Hellenic Research Foundation 48 Vassileos Constantinou Avenue 11635 Athens Griechenland
| | - Alejandro Cadranel
- Department of Chemistry and Pharmacy & interdisciplinary Center for Molecular Materials (ICMM) Friedrich-Alexander Universität Erlangen-Nürnberg Egerlandstr. 3 91058 Erlangen Deutschland
- Universidad de Buenos Aires Facultad de Ciencias Exactas y Naturales Departamento de Química Inorgánica Analítica y Química Física Pabellón 2, Ciudad Universitaria C1428EHA Buenos Aires Argentinien
- CONICET – Universidad de Buenos Aires Instituto de Química-Física de Materiales Medio Ambiente y Energía (INQUIMAE) Pabellón 2, Ciudad Universitaria C1428EHA Buenos Aires Argentinien
| | - Raul Arenal
- Laboratorio de Microscopias Avanzadas (LMA) Instituto de Nanociencia de Aragon (INA) U. Zaragoza Mariano Esquillor s/n 50018 Zaragoza Spanien
- Instituto de Ciencias de Materiales de Aragon CSIC-U. de Zaragoza Calle Pedro Cerbuna 12 50009 Zaragoza Spanien
- ARAID Foundation 50018 Zaragoza Spanien
| | - Dirk M. Guldi
- Department of Chemistry and Pharmacy & interdisciplinary Center for Molecular Materials (ICMM) Friedrich-Alexander Universität Erlangen-Nürnberg Egerlandstr. 3 91058 Erlangen Deutschland
| | - Nikos Tagmatarchis
- Theoretical and Physical Chemistry Institute National Hellenic Research Foundation 48 Vassileos Constantinou Avenue 11635 Athens Griechenland
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11
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Chowdhury T, Kim J, Sadler EC, Li C, Lee SW, Jo K, Xu W, Gracias DH, Drichko NV, Jariwala D, Brintlinger TH, Mueller T, Park HG, Kempa TJ. Substrate-directed synthesis of MoS 2 nanocrystals with tunable dimensionality and optical properties. NATURE NANOTECHNOLOGY 2020; 15:29-34. [PMID: 31740793 DOI: 10.1038/s41565-019-0571-2] [Citation(s) in RCA: 40] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2019] [Accepted: 10/03/2019] [Indexed: 06/10/2023]
Abstract
Two-dimensional transition-metal dichalcogenide (TMD) crystals are a versatile platform for optoelectronic, catalytic and quantum device studies. However, the ability to tailor their physical properties through explicit synthetic control of their morphology and dimensionality is a major challenge. Here we demonstrate a gas-phase synthesis method that substantially transforms the structure and dimensionality of TMD crystals without lithography. Synthesis of MoS2 on Si(001) surfaces pre-treated with phosphine yields high-aspect-ratio nanoribbons of uniform width. We systematically control the width of these nanoribbons between 50 and 430 nm by varying the total phosphine dosage during the surface treatment step. Aberration-corrected electron microscopy reveals that the nanoribbons are predominantly 2H phase with zig-zag edges and an edge quality that is comparable to, or better than, that of graphene and TMD nanoribbons prepared through conventional top-down processing. Owing to their restricted dimensionality, the nominally one-dimensional MoS2 nanocrystals exhibit photoluminescence 50 meV higher in energy than that from two-dimensional MoS2 crystals. Moreover, this emission is precisely tunable through synthetic control of crystal width. Directed crystal growth on designer substrates has the potential to enable the preparation of low-dimensional materials with prescribed morphologies and tunable or emergent optoelectronic properties.
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Affiliation(s)
- Tomojit Chowdhury
- Department of Chemistry, Johns Hopkins University, Baltimore, MD, USA
| | - Jungkil Kim
- Department of Chemistry, Johns Hopkins University, Baltimore, MD, USA
| | - Erick C Sadler
- Department of Chemistry, Johns Hopkins University, Baltimore, MD, USA
| | - Chenyang Li
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA
| | - Seong Won Lee
- Department of Physics, Korea University, Seoul, Republic of Korea
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Weinan Xu
- Department of Chemical and Biomolecular Engineering, Johns Hopkins University, Baltimore, MD, USA
| | - David H Gracias
- Department of Chemical and Biomolecular Engineering, Johns Hopkins University, Baltimore, MD, USA
| | - Natalia V Drichko
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Todd H Brintlinger
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC, USA
| | - Tim Mueller
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul, Republic of Korea
| | - Thomas J Kempa
- Department of Chemistry, Johns Hopkins University, Baltimore, MD, USA.
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA.
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12
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Sarkar S, Pradeepa HL, Nayak G, Marty L, Renard J, Coraux J, Bendiab N, Bouchiat V, Basu JK, Bid A. Evolution of inter-layer coupling in artificially stacked bilayer MoS 2. NANOSCALE ADVANCES 2019; 1:4398-4405. [PMID: 36134393 PMCID: PMC9418450 DOI: 10.1039/c9na00517j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Accepted: 09/22/2019] [Indexed: 05/25/2023]
Abstract
In this paper, we show experimentally that for van der Waals heterostructures (vdWh) of atomically-thin materials, the hybridization of bands of adjacent layers is possible only for ultra-clean interfaces. This we achieve through a detailed experimental study of the effect of interfacial separation and adsorbate content on the photoluminescence emission and Raman spectra of ultra-thin vdWh. For vdWh with atomically-clean interfaces, we find the emergence of novel vibrational Raman-active modes whose optical signatures differ significantly from that of the constituent layers. Additionally, we find for such systems a significant modification of the photoluminescence emission spectra with the appearance of peaks whose strength and intensity directly correlate with the inter-layer coupling strength. Our ability to control the intensity of the photoluminescence emission led to the observation of detailed optical features like indirect-band peaks. Our study establishes that it is possible to engineer atomically-thin van der Waals heterostructures with desired optical properties by controlling the inter-layer spacing, and consequently the inter-layer coupling between the constituent layers.
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Affiliation(s)
- Suman Sarkar
- Department of Physics, Indian Institute of Science Bangalore 560012 India
| | - H L Pradeepa
- Department of Physics, Indian Institute of Science Bangalore 560012 India
| | - Goutham Nayak
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel 38000 Grenoble France
| | - Laetitia Marty
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel 38000 Grenoble France
| | - Julien Renard
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel 38000 Grenoble France
| | - Johann Coraux
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel 38000 Grenoble France
| | - Nedjma Bendiab
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel 38000 Grenoble France
| | - Vincent Bouchiat
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel 38000 Grenoble France
| | - Jaydeep K Basu
- Department of Physics, Indian Institute of Science Bangalore 560012 India
| | - Aveek Bid
- Department of Physics, Indian Institute of Science Bangalore 560012 India
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13
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Soubelet P, Reynoso AA, Fainstein A, Nogajewski K, Potemski M, Faugeras C, Bruchhausen AE. The lifetime of interlayer breathing modes of few-layer 2H-MoSe 2 membranes. NANOSCALE 2019; 11:10446-10453. [PMID: 31112191 DOI: 10.1039/c9nr02447f] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
A time-resolved observation of coherent interlayer longitudinal acoustic phonons in thin layers of 2H-MoSe2 is reported. A femtosecond pump-probe technique is used to investigate the evolution of the energy loss of these vibrational modes in a wide selection of MoSe2 flakes with different thicknesses ranging from bilayer up to the bulk limit. By directly analysing the temporal decay of the modes, we can clearly distinguish an abrupt crossover related to the acoustic mean free path of the phonons in a layered system, and the constraints imposed on the acoustic decay channels when reducing the dimensionality. For thicker samples, the main acoustic attenuation mechanism is attributed to the scattering of the acoustic modes with thermal phonons. For samples thinner than ∼20 molecular layers, the predominant damping mechanism is ascribed to the effects of surface asperity. Losses intrinsic to the low dimensionality of single or few layer materials impose critical limitations for their use in optomechanical and optoelectronic devices.
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Affiliation(s)
- Pedro Soubelet
- Centro Atómico Bariloche & Instituto Balseiro (CNEA) and CONICET, 8400 S.C. de Bariloche, R.N., Argentina.
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14
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Jakubczyk T, Nayak G, Scarpelli L, Liu WL, Dubey S, Bendiab N, Marty L, Taniguchi T, Watanabe K, Masia F, Nogues G, Coraux J, Langbein W, Renard J, Bouchiat V, Kasprzak J. Coherence and Density Dynamics of Excitons in a Single-Layer MoS 2 Reaching the Homogeneous Limit. ACS NANO 2019; 13:3500-3511. [PMID: 30735350 PMCID: PMC6527262 DOI: 10.1021/acsnano.8b09732] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2018] [Accepted: 02/08/2019] [Indexed: 05/25/2023]
Abstract
We measure the coherent nonlinear response of excitons in a single layer of molybdenum disulfide embedded in hexagonal boron nitride, forming a h-BN/MoS2/ h-BN heterostructure. Using four-wave mixing microscopy and imaging, we correlate the exciton inhomogeneous broadening with the homogeneous one and population lifetime. We find that the exciton dynamics is governed by microscopic disorder on top of the ideal crystal properties. Analyzing the exciton ultrafast density dynamics using amplitude and phase of the response, we investigate the relaxation pathways of the resonantly driven exciton population. The surface protection via encapsulation provides stable monolayer samples with low disorder, avoiding surface contaminations and the resulting exciton broadening and modifications of the dynamics. We identify areas localized to a few microns where the optical response is totally dominated by homogeneous broadening. Across the sample of tens of micrometers, weak inhomogeneous broadening and strain effects are observed, attributed to the remaining interaction with the h-BN and imperfections in the encapsulation process.
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Affiliation(s)
- Tomasz Jakubczyk
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Goutham Nayak
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Lorenzo Scarpelli
- School
of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, United
Kingdom
| | - Wei-Lai Liu
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Sudipta Dubey
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Nedjma Bendiab
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Laëtitia Marty
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Takashi Taniguchi
- National
Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National
Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Francesco Masia
- School
of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, United
Kingdom
| | - Gilles Nogues
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Johann Coraux
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Wolfgang Langbein
- School
of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, United
Kingdom
| | - Julien Renard
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Vincent Bouchiat
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
| | - Jacek Kasprzak
- University
Grenoble Alpes, CNRS, Grenoble INP, Institut
Néel, 38000 Grenoble, France
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15
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Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T. Doping engineering and functionalization of two-dimensional metal chalcogenides. NANOSCALE HORIZONS 2019; 4:26-51. [PMID: 32254144 DOI: 10.1039/c8nh00150b] [Citation(s) in RCA: 106] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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Affiliation(s)
- Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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16
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Nazir G, Rehman MA, Khan MF, Dastgeer G, Aftab S, Afzal AM, Seo Y, Eom J. Comparison of Electrical and Photoelectrical Properties of ReS 2 Field-Effect Transistors on Different Dielectric Substrates. ACS APPLIED MATERIALS & INTERFACES 2018; 10:32501-32509. [PMID: 30182711 DOI: 10.1021/acsami.8b06728] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
As one of the newly discovered transition-metal dichalcogenides (TMDs), rhenium disulfide (ReS2) has been investigated mostly because of its unique characteristics such as the direct band gap nature even in bulk form, which is not prominent in other TMDs (e.g., MoS2, WSe2, etc.). However, this material possesses a low mobility and an on/off ratio, which restrict its usage in high-speed and fast switching applications. Low mobilities or on/off ratios can also be caused by substrate scattering as well as environmental effects. In this study, we used few-layer ReS2 (FL-ReS2) as a channel material to investigate the substrate-dependent mobility, current on/off ratio, Schottky barrier height (SBH), and trap density of states of different dielectric substrates. The hexagonal boron nitride (h-BN)/FL-ReS2/h-BN structure was observed to exhibit a high mobility of 45 cm2 V-1 s-1, current on/off ratio of about 107, the lowest SBH of about 12 mV at a zero back-gate voltage ( Vbg), and a low trap density of states of about 5 × 1013 cm-3. These quantities are reasonably superior compared to the FL-ReS2 devices on SiO2 substrates. We also observed a nearly 5-fold improvement in the photoresponsivity and external quantum efficiency values for the FL-ReS2 devices on h-BN substrates. We believe that the photonic characteristics of TMDs can be improved by using h-BN as the substrate and capping layer.
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17
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Wibmer L, Lages S, Unruh T, Guldi DM. Excitons and Trions in One-Photon- and Two-Photon-Excited MoS 2 : A Study in Dispersions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706702. [PMID: 29411441 DOI: 10.1002/adma.201706702] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2017] [Revised: 12/19/2017] [Indexed: 06/08/2023]
Abstract
Herein, various dispersions of MoS2 obtained by means of liquid phase exfoliation are spectroscopically, (spectro-) electrochemically, and microscopically characterized. At the core of these studies are transient absorption assays. Importantly, small-angle X-ray scattering measurements are employed to corroborate the exfoliated character of the MoS2 flakes in dispersion, on the one hand, and to correlate the results with TEM, AFM, and Raman characterization in the solid state, on the other. It is, then, demonstrated that transient absorption spectroscopy responds sensitively not only to changes in the sample preparation but also to instrumental and environmental parameters. It is documented that the spectroscopic features and their underlying lifetimes are tuneable on the femto-, pico-, and nanosecond scales by changing, for example, the centrifugation speed, the pump fluence, or the temperature. In other words, transient absorption spectroscopy provides an in situ method to quantitatively characterize liquid dispersions of MoS2 without facing the problems of reaggregated samples due to their drying for microscopic assays. The most far reaching results stem from resonantly and nonresonantly changing the pump fluence to characterize either single- or multiple-excited-state species such as excitons, trions, and bi-/multiexcitons and to follow their formation and deactivation pattern.
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Affiliation(s)
- Leonie Wibmer
- Department of Chemistry and Pharmacy & Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058, Erlangen, Germany
| | - Sebastian Lages
- Department of Physics, Institute for Crystallography and Structural Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstraße 3, 91058, Erlangen, Germany
| | - Tobias Unruh
- Department of Physics, Institute for Crystallography and Structural Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstraße 3, 91058, Erlangen, Germany
| | - Dirk M Guldi
- Department of Chemistry and Pharmacy & Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058, Erlangen, Germany
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