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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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Han J, Son J, Ryu S, Cho K, Kim S. Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure. Sci Rep 2024; 14:6446. [PMID: 38499697 PMCID: PMC10948861 DOI: 10.1038/s41598-024-57290-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2023] [Accepted: 03/16/2024] [Indexed: 03/20/2024] Open
Abstract
In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the polarity of the gate bias voltage and exhibit steep switching characteristics with an extremely low subthreshold swing of 1.08 mV dec-1 and a high ON/OFF current ratio of approximately 107. Logic circuits consisting of NS FBFETs perform binary and ternary logic operations of the inverters and NAND and NOR gates in each circuit and store their outputs under zero-bias conditions. Therefore, NS FBFETs are promising components for next-generation LIM.
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Affiliation(s)
- Jongseong Han
- Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jaemin Son
- Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seungho Ryu
- Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Kyoungah Cho
- Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Sangsig Kim
- Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.
- Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.
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Wang Q, Song Y, Ran Y, Li Y, Pan Y, Ye Y. Coplanar MoS 2 -MoTe 2 Heterojunction With the Same Crystal Orientation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2308635. [PMID: 38158339 DOI: 10.1002/smll.202308635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Revised: 12/11/2023] [Indexed: 01/03/2024]
Abstract
Two-dimensional (2D) coplanar heterostructure enables high-performance optoelectronic devices, such as p-n heterojunctions. However, realizing site-controllable and shape-specific 2D coplanar heterojunctions composed of two semiconductors with the same crystal orientation still requires the development of new growth methods. Here, a route to fabricate MoS2 -MoTe2 coplanar heterojunctions with the same crystal orientation is reported by exploiting the properties of phase transition and atomic rearrangement during the growth of 2H-MoTe2 . Raman spectroscopy and electron microscopy techniques reveal the chemical composition and lattice structure of the heterostructure. Both MoS2 and MoTe2 in the heterojunction are single crystals and have the same lattice orientation, and their shapes can be arbitrarily defined by electron beam lithography. Electrical measurements show that the MoS2 and MoTe2 channels exhibit n-type and p-type transfer characteristics, respectively. The coplanar epitaxy technology can be used to prepare more coplanar heterostructures with novel device functions.
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Affiliation(s)
- Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yiwen Song
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yuqia Ran
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yanping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Pan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu, 226010, China
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Li Z, Huang X, Xu L, Peng Z, Yu XX, Shi W, He X, Meng X, Yang D, Tong L, Miao X, Ye L. 2D van der Waals Vertical Heterojunction Transistors for Ternary Neural Networks. NANO LETTERS 2023; 23:11710-11718. [PMID: 37890139 DOI: 10.1021/acs.nanolett.3c03553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2023]
Abstract
Compared with binary systems, ternary computing systems can utilize fewer devices to realize the same information density. However, most ternary computing systems based on binary CMOS circuits require additional devices to bridge binary processing and ternary computing. Exploring new device architectures for direct ternary processing and computing becomes the key to promoting ternary computing systems. Here, we demonstrated a 2D van der Waals vertical heterojunction transistor (V-HTR) with three flat conductance states, which can be the basic cell in ternary circuits to perform ternary processing and computing, without additional devices. A ternary neural network (TNN) and a ternary inverter were demonstrated based on the V-HTRs. The TNN can eliminate fuzzy data and output only clear data by building a ternary quantization function. By demonstrating both ternary logic and a TNN on the same device architecture, the 2D V-HTR shows potential as a basic hardware unit for future ternary computing systems.
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Affiliation(s)
- Zheng Li
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xinyu Huang
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Langlang Xu
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zhuiri Peng
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiang-Xiang Yu
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Wenhao Shi
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiao He
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiaohan Meng
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Daohong Yang
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Lei Tong
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Xiangshui Miao
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Lei Ye
- School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Zhang J, Duan L, Zhou N, Zhang L, Shang C, Xu H, Yang R, Wang X, Li X. Modulating the Function of GeAs/ReS 2 van der Waals Heterojunction with its Potential Application for Short-Wave Infrared and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303335. [PMID: 37154239 DOI: 10.1002/smll.202303335] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Indexed: 05/10/2023]
Abstract
Van der Waals heterojunction (vdWs) of 2D materials with integrated or extended superior characteristics, opening up new opportunities in functional electronic and optoelectric device applications. Exploring methods to achieve multifunctional vdWs heterojunction devices is one of the most promising prospects in this area. Herein, a diverse function of forward rectifying diode, Zener tunneling diode, and backward rectifying diodes are realized in GeAs/ReS2 heterojunction by modulating the doping level of GeAs. The tunneling diode presents an interesting trend forward negative differential resistance (NDR) behavior which may facilitate the application of multi-value logic. More importantly, the GeAs/ReS2 forward rectifying diode exhibits highly sensitive photodetection in the wide-spectrum range up to 1550 nm corresponding to a short-wave infrared (SWIR) region. In addition, as two strong anisotropic 2D materials of GeAs and ReS2 , the heterojunction exhibits strong polarization-sensitive photodetection behavior with a dichroic photocurrent ratio of 1.7. This work provides an effective strategy to achieve multifunctional 2D vdW heterojunction devices and develops more possibilities to broaden their functionalities and applications.
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Affiliation(s)
- Jianbin Zhang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Linfan Duan
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Lihui Zhang
- Xi'an Thermal Power Research Institute Co., Ltd., Xi'an, 710054, P. R. China
| | - Conghui Shang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Rusen Yang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
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6
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Lee C, Lee C, Lee S, Choi J, Yoo H, Im SG. A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors. Nat Commun 2023; 14:3757. [PMID: 37353504 DOI: 10.1038/s41467-023-39394-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Accepted: 06/06/2023] [Indexed: 06/25/2023] Open
Abstract
A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-inverter) has been successfully implemented, which showed an unprecedentedly high static noise margin of 85% for binary logic operation and 59% for ternary logic operation, as well as long-term stability and outstanding cycle endurance. Furthermore, a ternary/binary dynamic logic conversion-in-memory has been demonstrated using a serially-connected R-inverter chain. The ternary/binary dynamic logic conversion-in-memory could generate three different output logic sequences for the same input signal in three logic levels, which is a new logic computing method that has never been presented before.
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Affiliation(s)
- Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Seungmin Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Junhwan Choi
- Department of Chemical Engineering, Dankook University, 152, Jukjeon-ro, Suji-gu, Yongin, 16890, South Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Korea.
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea.
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea.
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7
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Kim JH, Kim SG, Kim SH, Han KH, Kim J, Yu HY. Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37339325 DOI: 10.1021/acsami.3c03213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.
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Affiliation(s)
- Jong-Hyun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Seung-Geun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Seung-Hwan Kim
- Center for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Korea
| | - Kyu-Hyun Han
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Jiyoung Kim
- Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, Texas 75080-3021, United States
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
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Kim H, Uddin I, Watanabe K, Taniguchi T, Whang D, Kim GH. Conversion of Charge Carrier Polarity in MoTe 2 Field Effect Transistor via Laser Doping. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101700. [PMID: 37242116 DOI: 10.3390/nano13101700] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 05/04/2023] [Accepted: 05/19/2023] [Indexed: 05/28/2023]
Abstract
A two-dimensional (2D) atomic crystalline transition metal dichalcogenides has shown immense features, aiming for future nanoelectronic devices comparable to conventional silicon (Si). 2D molybdenum ditelluride (MoTe2) has a small bandgap, appears close to that of Si, and is more favorable than other typical 2D semiconductors. In this study, we demonstrate laser-induced p-type doping in a selective region of n-type semiconducting MoTe2 field effect transistors (FET) with an advance in using the hexagonal boron nitride as passivation layer from protecting the structure phase change from laser doping. A single nanoflake MoTe2-based FET, exhibiting initial n-type and converting to p-type in clear four-step doping, changing charge transport behavior in a selective surface region by laser doping. The device shows high electron mobility of about 23.4 cm2V-1s-1 in an intrinsic n-type channel and hole mobility of about 0.61 cm2V-1s-1 with a high on/off ratio. The device was measured in the range of temperature 77-300 K to observe the consistency of the MoTe2-based FET in intrinsic and laser-dopped region. In addition, we measured the device as a complementary metal-oxide-semiconductor (CMOS) inverter by switching the charge-carrier polarity of the MoTe2 FET. This fabrication process of selective laser doping can potentially be used for larger-scale MoTe2 CMOS circuit applications.
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Affiliation(s)
- Hanul Kim
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Inayat Uddin
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Material Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dongmok Whang
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Gil-Ho Kim
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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9
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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10
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Zhang Y, Wang L, Wang B, Yang M, Lin D, Shao J, Zhang N, Jiang Z, Liu M, Hu H. Diverse field-effect characteristics and negative differential transconductance in a graphene/WS 2/Au phototransistor with a Ge back gate. OPTICS EXPRESS 2023; 31:6750-6758. [PMID: 36823925 DOI: 10.1364/oe.482536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 01/23/2023] [Indexed: 06/18/2023]
Abstract
We propose an infrared-sensitive negative differential transconductance (NDT) phototransistor based on a graphene/WS2/Au double junction with a SiO2/Ge gate. By changing the drain bias, diverse field-effect characteristics can be achieved. Typical p-type and n-type behavior is obtained under negative and positive drain bias, respectively. And NDT behavior is observed in the transfer curves under positive drain bias. It is believed to originate from competition between the top and bottom channel currents in stepped layers of WS2 at different gate voltages. Moreover, this phototransistor shows a gate-modulated rectification ratio of 0.03 to 88.3. In optoelectronic experiments, the phototransistor exhibits a responsivity of 2.76 A/W under visible light at 532 nm. By contrast, an interesting negative responsivity of -29.5 µA/W is obtained and the NDT vanishes under illumination by infrared light at 1550 nm. A complementary inverter based on two proposed devices of the same structure is constructed. The maximum voltage gain of the complementary inverter reaches 0.79 at a supply voltage of 1.5 V. These results demonstrate a new method of realizing next-generation two- and three-dimensional electronic and optoelectronic multifunctional devices.
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11
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Iordanidou K, Mitra R, Shetty N, Lara-Avila S, Dash S, Kubatkin S, Wiktor J. Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1762-1771. [PMID: 36537996 PMCID: PMC9837817 DOI: 10.1021/acsami.2c13151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Heterostacks consisting of low-dimensional materials are attractive candidates for future electronic nanodevices in the post-silicon era. In this paper, using first-principles calculations based on density functional theory (DFT), we explore the structural and electronic properties of MoTe2/ZrS2 heterostructures with various stacking patterns and thicknesses. Our simulations show that the valence band (VB) edge of MoTe2 is almost aligned with the conduction band (CB) edge of ZrS2, and (MoTe2)m/(ZrS2)m (m = 1, 2) heterostructures exhibit the long-sought broken gap band alignment, which is pivotal for realizing tunneling transistors. Electrons are found to spontaneously flow from MoTe2 to ZrS2, and the system resembles an ultrascaled parallel plate capacitor with an intrinsic electric field pointed from MoTe2 to ZrS2. The effects of strain and external electric fields on the electronic properties are also investigated. For vertical compressive strains, the charge transfer increases due to the decreased coupling between the layers, whereas tensile strains lead to the opposite behavior. For negative electric fields a transition from the type-III to the type-II band alignment is induced. In contrast, by increasing the positive electric fields, a larger overlap between the valence and conduction bands is observed, leading to a larger band-to-band tunneling (BTBT) current. Low-strained heterostructures with various rotation angles between the constituent layers are also considered. We find only small variations in the energies of the VB and CB edges with respect to the Fermi level, for different rotation angles up to 30°. Overall, our simulations offer insights into the fundamental properties of low-dimensional heterostructures and pave the way for their future application in energy-efficient electronic nanodevices.
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Affiliation(s)
| | - Richa Mitra
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Naveen Shetty
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Samuel Lara-Avila
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Saroj Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Sergey Kubatkin
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Julia Wiktor
- Department
of Physics, Chalmers University of Technology, SE-412 96Gothenburg, Sweden
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12
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Xiao Y, Zou G, Huo J, Sun T, Feng B, Liu L. Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS 2 Transistors for Active Control of Extendable Logic. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1563-1573. [PMID: 36560862 DOI: 10.1021/acsami.2c17788] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Field-effect transistor (FET) devices with multi-gate coupled structures usually exhibit special electrical properties and are suitable for fabricating multifunctional devices. Among them, the 1D nanowire gate configuration has become a promising gate design to tailor 2D FET performances. However, due to possible short circuiting induced by nanowire contact and the high requirement for precision manipulation, the integration of multi-nanowires as gates in a single 2D electronic system remains a grand challenge. Herein, local laser--thinned multiple core-shell SiC@SiO2 nanowires are successfully integrated into MoS2 transistors as multi-gates for active control of extendable logic applications. Nanowire gates (NGs) locally enhance the carrier transportation, and the use of multiple NGs can achieve designed band structures to tune the performance of the device. For core-shell structures, a semiconducting core is used to introduce a gate bias, and the insulating shell provides protection against short circuiting between NGs, facilitating nanowire assembly. Furthermore, a global control gate is introduced to co-tune the overall electrical characteristics, while active control of logic devices and extendable inputs are achieved based on this model. This work proposes a novel nanowire multi-gate configuration, which provides possibilities for localized, precise control of band structures and the fabrication of highly integrated, multifunctional, and controllable nano-devices.
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Affiliation(s)
- Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi Province, China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China
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13
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Park DH, Lee HC. Photogating Effect of Atomically Thin Graphene/MoS 2/MoTe 2 van der Waals Heterostructures. MICROMACHINES 2023; 14:140. [PMID: 36677201 PMCID: PMC9866681 DOI: 10.3390/mi14010140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 12/30/2022] [Accepted: 01/02/2023] [Indexed: 06/17/2023]
Abstract
The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488−1550 nm).
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Affiliation(s)
- Do-Hyun Park
- Division of Quantum Phase and Devices, Konkuk University, Seoul 05029, Republic of Korea
| | - Hyo Chan Lee
- Chemical Engineering, Myongji University, Yongin 17058, Republic of Korea
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14
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Andreev M, Seo S, Jung KS, Park JH. Looking Beyond 0 and 1: Principles and Technology of Multi-Valued Logic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108830. [PMID: 35894513 DOI: 10.1002/adma.202108830] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 05/27/2022] [Indexed: 06/15/2023]
Abstract
Ever since the invention of solid-state transistors, binary devices have dominated the electronics industry. Although the binary technology links the natural property of devices to be in the ON or OFF state with two logic levels, it provides the least possible information content per interconnect. Multi-valued logic (MVL) has long been considered as a means of improving the computation efficiency and reducing the power consumption of modern chips. In view of the power density limits of the conventional complementary metal-oxide-semiconductor technology, MVL technologies have recently gained even more attention, and various MVL unit devices based on conventional and emerging materials have been proposed. Herein, the recent achievements toward the development of compact MVL unit devices are reviewed. First, basic principles of MVL technologies are introduced by describing methods of obtaining multiple logic states and discussing radix-related aspects of MVL computation. Next, MVL unit devices are classified and overviewed with emphasis on principles of operation, technologies, and applications. Finally, a comparative discussion of strengths and weaknesses is provided for each class of MVL devices, and the review concludes with the outlook for the MVL field.
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Affiliation(s)
- Maksim Andreev
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Kil-Su Jung
- Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
- Memory Technology Design Team, Samsung Electronics Co. Ltd, Hwasung, 18448, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
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15
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Munjam SR, Khan MI, Sharma RP, Seshadri R, Bafakeeh OT, Malik MY. Analytical approach in higher predict residual error on MHD mixed convective motion of MoS 2 engine-oil based nanofluid. INTERNATIONAL JOURNAL OF CHEMICAL REACTOR ENGINEERING 2022. [DOI: 10.1515/ijcre-2022-0149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
Abstract
We obtain the clean semi-analytical solutions with method of directly defining inverse mapping (MDDiM) to the system of nonlinear equations arising in the magnetohydrodynamic (MHD) convection motion of Molybdenum disulfide (MoS2) engine-oil intrinsic nanofluid in a circumnavigatethe structure is considered for analysis. Finding the solutions by using MDDiM is a novel idea and first time solving for the system of nonlinear partial differential equations. We have chosen inverse linear mapping for the five-term solution and it emphasizes by residual error and this gives the low error (10−2 to 10−17) and can easily derive deformation terms by spending very low CPU time. Based on the proposed method, the convergence rate, accuracy, and efficiency of the governing equations are demonstrated, and result outputs shown in tabular and graphically, which exhibit meaningful structures and advantages in science and engineering.
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Affiliation(s)
- Shankar Rao Munjam
- School of Technology , Woxsen University , Hyderabad , Telangana 502345 , India
| | - M. Ijaz Khan
- Department of Mechanics and Engineering Science , Peking University , Beijing 100871 , P. R. China
- Department of Mechanical Engineering , Lebanese American University , Beirut , Lebanon
| | - Ram Prakash Sharma
- Department of Mechanical Engineering , National Institute of Technology , Jote , Papumpare 791113 , Arunachal Pradesh , India
| | - Rajeswari Seshadri
- Department of Mathematics, Ramanujan School of Mathematical Sciences , Pondicherry University , Pondicherry 605014 , India
| | - Omar T. Bafakeeh
- School of Industrial Engineering , Jazan University , Jazan , Saudi Arabia
| | - M. Y. Malik
- Department of Mathematics, College of Sciences , King Khalid University , Abha , Saudi Arabia
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16
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Chen C, Yang S, Lin C, Lee M, Tsai M, Yang F, Chang Y, Li M, Lee K, Ueno K, Shi Y, Lien C, Wu W, Chiu P, Li W, Lo S, Lin Y. Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106016. [PMID: 35831244 PMCID: PMC9404391 DOI: 10.1002/advs.202106016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 04/29/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals (vdW) heterostructures-in which layered materials are purposely selected to assemble with each other-allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet-of-things applications. Here, an O2 -ultrasensitive MoTe2 material and an O2 -insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge-polarity control for multioperation-mode transistors through a simple and effective rapid thermal annealing strategy under dry-air and vacuum conditions. The charge-polarity control (i.e., doping and de-doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2 /SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti-ambipolar transfer characteristics. Based on the dynamic control of the charge-polarity properties, an inverter, output polarity controllable amplifier, p-n diode, and ternary-state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.
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Affiliation(s)
- Ciao‐Fen Chen
- Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS)National Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Shih‐Hsien Yang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education)Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province)Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Che‐Yi Lin
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Mu‐Pai Lee
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
| | - Meng‐Yu Tsai
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Feng‐Shou Yang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Yuan‐Ming Chang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Mengjiao Li
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Ko‐Chun Lee
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Keiji Ueno
- Department of ChemistryGraduate School of Science and EngineeringSaitama UniversitySaitama338–8570Japan
| | - Yumeng Shi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education)Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province)Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Chen‐Hsin Lien
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Wen‐Wei Wu
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
- Center for the Intelligent Semiconductor Nano‐system Technology ResearchNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
| | - Po‐Wen Chiu
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Zhangjiang Fudan International Innovation CenterInstitute of OptoelectronicsDepartment of Materials ScienceFudan UniversityShanghai200433China
| | - Shun‐Tsung Lo
- Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS)National Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yen‐Fu Lin
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Department of Materials Science and EngineeringInstitute of Nanosciencei‐Center for Advanced Science and Technology (i‐CAST)National Chung Hsing UniversityTaichung40227Taiwan
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17
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Köster J, Storm A, Gorelik TE, Mohn MJ, Port F, Gonçalves MR, Kaiser U. Evaluation of TEM methods for their signature of the number of layers in mono- and few-layer TMDs as exemplified by MoS2 and MoTe2. Micron 2022; 160:103303. [DOI: 10.1016/j.micron.2022.103303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Revised: 05/23/2022] [Accepted: 05/26/2022] [Indexed: 11/16/2022]
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18
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Choi J, Lee C, Lee C, Park H, Lee SM, Kim CH, Yoo H, Im SG. Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors. Nat Commun 2022; 13:2305. [PMID: 35484111 PMCID: PMC9051064 DOI: 10.1038/s41467-022-29756-w] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 03/03/2022] [Indexed: 11/25/2022] Open
Abstract
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, an organic ternary logic inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory is employed to control the channel conductance systematically, thus realizing the stabilized T-inverter operation. The 3-dimensional (3D) T-inverter is fabricated in a vertically stacked form based on all-dry processes, which enables the high-density integration with high device uniformity. In the flash memory, ultrathin polymer dielectrics are utilized to reduce the programming/erasing voltage as well as operating voltage. With the optimum programming state, the 3D T-inverter fulfills all the important requirements such as full-swing operation, optimum intermediate logic value (~VDD/2), high DC gain exceeding 20 V/V as well as low-voltage operation (< 5 V). The organic flash memory exhibits long retention characteristics (current change less than 10% after 104 s), leading to the long-term stability of the 3D T-inverter. We believe the 3D T-inverter employing flash memory developed in this study can provide a useful insight to achieve high-performance MVL circuits. High-density information processing without increasing the circuit complexity is highly desired in electronics. Here, Im et al. demonstrate a low-voltage organic ternary logic circuit vertically integrated with the nonvolatile flash memory, increasing the information density by a factor of 3.
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Affiliation(s)
- Junhwan Choi
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Chungryeol Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Hongkeun Park
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Seung Min Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Chang-Hyun Kim
- Department of Electronic Engineering Gachon University 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Korea
| | - Hocheon Yoo
- Department of Electronic Engineering Gachon University 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Korea.
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea. .,KAIST Institute For NanoCentury (KINC) Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
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19
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Geng G, Wu E, Xu L, Hu X, Miao X, Zou J, Wu S, Liu J, Liu Y, He Z. Dielectric engineering enable to lateral anti-ambipolar MoTe 2heterojunction. NANOTECHNOLOGY 2022; 33:175704. [PMID: 35008081 DOI: 10.1088/1361-6528/ac49c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
Atomically two-dimensional (2D) materials have generated widespread interest for novel electronics and optoelectronics. Specially, owing to atomically thin 2D structure, the electronic bandgap of 2D semiconductors can be engineered by manipulating the surrounding dielectric environment. In this work, we develop an effective and controllable approach to manipulate dielectric properties of h-BN through gallium ions (Ga+) implantation for the first time. And the maximum surface potential difference between the intrinsic h-BN (h-BN) and the Ga+implanted h-BN (Ga+-h-BN) is up to 1.3 V, which is characterized by Kelvin probe force microscopy. More importantly, the MoTe2transistor stacked on Ga+-h-BN exhibits p-type dominated transfer characteristic, while the MoTe2transistor stacked on the intrinsic h-BN behaves as n-type, which enable to construct MoTe2heterojunction through dielectric engineering of h-BN. The dielectric engineering also provides good spatial selectivity and allows to build MoTe2heterojunction based on a single MoTe2flake. The developed MoTe2heterojunction shows stable anti-ambipolar behaviour. Furthermore, we preliminarily implemented a ternary inverter based on anti-ambipolar MoTe2heterojunction. Ga+implantation assisted dielectric engineering provides an effective and generic approach to modulate electric bandgap for a wide variety of 2D materials. And the implementation of ternary inverter based on anti-ambipolar transistor could lead to new energy-efficient logical circuit and system designs in semiconductors.
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Affiliation(s)
- Guangyu Geng
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Linyan Xu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaopu Miao
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Zou
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Sen Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Yang Liu
- Bruker (Beijing) Scientific Technology Co., Ltd, Beijing 100081, People's Republic of China
| | - Zhongdu He
- Thermofisher Scientific Co., Ltd, MSD, Shanghai NNP, People's Republic of China
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20
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Lee C, Choi J, Park H, Lee C, Kim CH, Yoo H, Im SG. Systematic Control of Negative Transconductance in Organic Heterojunction Transistor for High-Performance, Low-Power Flexible Ternary Logic Circuits. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103365. [PMID: 34636162 DOI: 10.1002/smll.202103365] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Indexed: 06/13/2023]
Abstract
Organic multi-valued logic (MVL) circuits can substantially improve the data processing efficiency in highly advanced wearable electronics. Organic ternary logic circuits can be implemented by utilizing the negative transconductance (NTC) of heterojunction transistors (H-TRs). To achieve high-performance organic ternary logic circuits, the range of NTC in H-TRs must be optimized in advance to ensure the well-defined intermediate logic state in ternary logic inverters (T-inverters). Herein, a simple and efficient strategy, which enables the systematic control of the range and position of NTC in H-TRs is presented. Each thickness of p-/n-type semiconductor in H-TRs is adjusted to control the channel conductivity. Furthermore, asymmetric source/drain (S/D) electrode structure is newly developed for H-TRs, which can adjust the amount of hole and electron injection, independently. Based on the semiconductor thickness variation and asymmetric S/D electrodes, the T-inverter exhibits full-swing operation with three distinguishable logic states, resulting in unprecedentedly high static noise margin (≈48% of the ideal value). Moreover, a flexible T-inverter with an ultrathin polymer dielectric is demonstrated, whose operating voltage is less than 8 V. The proposed strategy is fully compatible with the conventional integrated circuit design, which is highly desirable for broad applicability and scalability for various types of T-inverter production.
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Affiliation(s)
- Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Junhwan Choi
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hongkeun Park
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Chang-Hyun Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- KAIST Institute for the NanoCentury (KINC), Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
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Hung C, Chiang Y, Lin Y, Chiu Y, Chen W. Conception of a Smart Artificial Retina Based on a Dual-Mode Organic Sensing Inverter. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100742. [PMID: 34096194 PMCID: PMC8373107 DOI: 10.1002/advs.202100742] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 04/06/2021] [Indexed: 05/05/2023]
Abstract
The human visual system enables perceiving, learning, remembering, and recognizing elementary visual information (light, colors, and images), which has inspired the development of biomimicry visual system-based electronic devices. Photosensing and synaptic devices are integrated into these systems to realize elementary information storage and recognition to imitate image processing. However, the severe restrictions of the monotonic light response and complicated circuitry design remain challenges for the development of artificial visual devices. Here, the concept of a smart artificial retina based on an organic optical sensing inverter device that can be operated as a multiwavelength photodetector and recorder is reported first. The device exhibits a light-triggered broadband (red/green/blue) response, a low energy consumption as low as ±5 V, and an ultrafast response speed (<300 ms). Moreover, the multifunctional component is also combined within a single cell for health monitoring of the artificial retina during light surveillance to avoid retinopathy. Proof-of-concept devices, by simplifying the circuitry and providing dual-mode functions, can contribute significantly to the development of bionics design and broaden the horizon for smart artificial retinas in the human visual system.
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Affiliation(s)
- Chih‐Chien Hung
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Yun‐Chi Chiang
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Yu‐Cheng Chiu
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
- Department of Chemical EngineeringNational Taiwan University of Science and TechnologyTaipei10607Taiwan
| | - Wen‐Chang Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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22
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Xie Y, Wu E, Fan S, Geng G, Hu X, Xu L, Wu S, Liu J, Zhang D. Modulation of MoTe 2/MoS 2 van der Waals heterojunctions for multifunctional devices using N 2O plasma with an opposite doping effect. NANOSCALE 2021; 13:7851-7860. [PMID: 33881030 DOI: 10.1039/d0nr08814e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals layered heterojunctions have a variety of band offsets that open up possibilities for a wide range of novel and multifunctional devices. However, due to their poor pristine carrier concentrations and limited band modulation methods, multifunctional p-n heterojunctions are very difficult to achieve. In this report, we developed a highly effective N2O plasma process to treat MoTe2/MoS2 heterojunctions. This allowed us to adjust the hole and electron concentrations in the two materials independently and simultaneously. More importantly, for the first time, we were able to create opposite doping on the two sides of the junction through a single-step treatment. With a very wide doping range from pristine to degenerate levels, a MoTe2/MoS2 heterojunction can be modulated to behave as a forward rectifying diode with enhanced rectifying ratio and as a tunneling transistor with negative differential resistance at room temperature. The new approach provides an effective and generic doping scheme for heterojunctions to construct versatile and multifunctional electronic devices.
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Affiliation(s)
- Yuan Xie
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Shuangqing Fan
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China
| | - Guangyu Geng
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Linyan Xu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Sen Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
| | - Daihua Zhang
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, China.
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23
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Cho SH, Jang H, Im H, Lee D, Lee JH, Watanabe K, Taniguchi T, Seong MJ, Lee BH, Lee K. Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures. Sci Rep 2021; 11:7843. [PMID: 33846520 PMCID: PMC8041794 DOI: 10.1038/s41598-021-87442-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2021] [Accepted: 03/25/2021] [Indexed: 11/09/2022] Open
Abstract
Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (VD), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (VBG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative VD, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at VD = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different VD and VBG regimes.
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Affiliation(s)
- Sang-Hoo Cho
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Donghyeon Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Byoung Hun Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea.,Center for Semiconductor Technology Convergence (CSTC), Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Kayoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea. .,School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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24
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Yan Y, Li S, Du J, Yang H, Wang X, Song X, Li L, Li X, Xia C, Liu Y, Li J, Wei Z. Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near-Broken Band Alignment. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:1903252. [PMID: 33643781 PMCID: PMC7887575 DOI: 10.1002/advs.201903252] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Revised: 09/27/2020] [Indexed: 05/19/2023]
Abstract
2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate-induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs-based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH-FET is constructed as a gate-controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near-broken band alignment in the InSe/GeSe vdWH-FET is a crucial feature for high-performance reversible rectifier, which is shown to have backward and forward rectification ratio of 1:38 and 963:1, respectively. Being further explored as a new bridge rectifier, the InSe/GeSe device has great potential in future gate-controllable alternating current/direct current convertor. These results indicate that 2D vdWHs with near-broken band alignment can offer a pathway to simplify the commutating circuit and regulating speed circuit.
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Affiliation(s)
- Yong Yan
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Shasha Li
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Juan Du
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of PhysicsPeking UniversityBeijing100871China
| | - Huai Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100083China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100083China
| | - Xiaohui Song
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Lixia Li
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and ApplicationsHenan Normal UniversityXinxiang453007China
| | - Xueping Li
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Congxin Xia
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Yufang Liu
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and ApplicationsHenan Normal UniversityXinxiang453007China
| | - Jingbo Li
- Institute of SemiconductorsSouth China Normal UniversityGuangzhou510631China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100083China
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25
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Shi J, Huan Y, Zhao X, Yang P, Hong M, Xie C, Pennycook S, Zhang Y. Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material. ACS NANO 2021; 15:1858-1868. [PMID: 33445868 DOI: 10.1021/acsnano.0c10250] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe2) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe2 nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe2 can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm2 V-1 s-1) was achieved in 1T-VTe2-contacted monolayer MoS2 devices than that using a conventional Ti/Au electrode (∼8.1 cm2 V-1 s-1). Moreover, the CVD-synthesized 1T-VTe2 nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.
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Affiliation(s)
- Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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26
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Britz A, Attar AR, Zhang X, Chang HT, Nyby C, Krishnamoorthy A, Park SH, Kwon S, Kim M, Nordlund D, Sainio S, Heinz TF, Leone SR, Lindenberg AM, Nakano A, Ajayan P, Vashishta P, Fritz D, Lin MF, Bergmann U. Carrier-specific dynamics in 2H-MoTe 2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser. STRUCTURAL DYNAMICS (MELVILLE, N.Y.) 2021; 8:014501. [PMID: 33511247 PMCID: PMC7808761 DOI: 10.1063/4.0000048] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Accepted: 12/20/2020] [Indexed: 06/12/2023]
Abstract
Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d 5/2 core level (M5-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.
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Affiliation(s)
| | | | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
| | - Hung-Tzu Chang
- Department of Chemistry, University of California, Berkeley, California 94720, USA
| | | | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, USA
| | - Sang Han Park
- PAL-XFEL, Pohang Accelerator Laboratory, 80 Jigokro-127-beongil, Nam-gu, Pohang, Gyeongbuk 37673, South Korea
| | - Soonnam Kwon
- PAL-XFEL, Pohang Accelerator Laboratory, 80 Jigokro-127-beongil, Nam-gu, Pohang, Gyeongbuk 37673, South Korea
| | - Minseok Kim
- PAL-XFEL, Pohang Accelerator Laboratory, 80 Jigokro-127-beongil, Nam-gu, Pohang, Gyeongbuk 37673, South Korea
| | - Dennis Nordlund
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Sami Sainio
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | | | | | | | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, USA
| | - Pulickel Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, USA
| | - David Fritz
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Ming-Fu Lin
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Uwe Bergmann
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
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27
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Attar AR, Chang HT, Britz A, Zhang X, Lin MF, Krishnamoorthy A, Linker T, Fritz D, Neumark DM, Kalia RK, Nakano A, Ajayan P, Vashishta P, Bergmann U, Leone SR. Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe 2 with Femtosecond Core-Level Spectroscopy. ACS NANO 2020; 14:15829-15840. [PMID: 33085888 DOI: 10.1021/acsnano.0c06988] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe2 semiconductor. By interrogating the valence electronic structure via localized Te 4d (39-46 eV) and Mo 4p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A1g (5.1 THz) and in-plane E1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.
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Affiliation(s)
- Andrew R Attar
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Hung-Tzu Chang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Alexander Britz
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Ming-Fu Lin
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Thomas Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - David Fritz
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Daniel M Neumark
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Pulickel Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Uwe Bergmann
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen R Leone
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of California, Berkeley, California 94720, United States
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28
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Jin C, Olsen BC, Luber EJ, Buriak JM. van der Waals Epitaxy of Soft Twisted Bilayers: Lattice Relaxation and Mass Density Waves. ACS NANO 2020; 14:13441-13450. [PMID: 32931263 DOI: 10.1021/acsnano.0c05310] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interfaces comprising incommensurate or twisted hexagonal lattices are ubiquitous and of great interest, from adsorbed organic/inorganic interfaces in electronic devices, to superlubricants, and more recently to van der Waals bilayer heterostructures (vdWHs) of graphene and other 2D materials that demonstrate a range of properties such as superconductivity and ferromagnetism. Here we show how growth of 2D crystalline domains of soft block copolymers (BCPs) on patterned hard hexagonal lattices provide fundamental insights into van der Waals heteroepitaxy. At moderate registration forces, it is experimentally found that these BCP-hard lattice vdWHs do not adopt a simple moiré superstructure, but instead adopt local structural relaxations known as mass density waves (MDWs). Simulations reveal that MDWs are a primary mechanism of energy minimization and are the origin of the observed preferential twist angle between the lattices.
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Affiliation(s)
- Cong Jin
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, AB T6G 2G2, Canada
| | - Brian C Olsen
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, AB T6G 2G2, Canada
| | - Erik J Luber
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, AB T6G 2G2, Canada
| | - Jillian M Buriak
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, AB T6G 2G2, Canada
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29
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Andreev M, Choi JW, Koo J, Kim H, Jung S, Kim KH, Park JH. Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits. NANOSCALE HORIZONS 2020; 5:1378-1385. [PMID: 32725030 DOI: 10.1039/d0nh00163e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Multi-valued logic (MVL) technology is a promising approach for improving the data-handling capabilities and decreasing the power consumption of integrated circuits. This is especially attractive as conventional complementary metal-oxide-semiconductor technology is approaching its scaling and power density limits. Here, an ambipolar WSe2 field-effect transistor with two or more negative-differential-transconductance (NDT) regions in its transfer characteristic (NDTFET) is proposed for MVL applications of various radices. The operation and charge carrier transport mechanism of the NDTFET are studied first by Kelvin probe force microscopy, electrical, and capacitance-voltage measurements. Next, strategies for increasing the number of NDT regions and engineering the NDTFET transfer characteristic are discussed. Finally, the extensibility and tunability of our concept are demonstrated by adapting NDTFETs as core devices for ternary, quaternary, and quinary MVL inverters through simulations, where only WSe2 is employed as a channel material for all devices comprising the inverters. The MVL inverter operation principle and the mechanism of the multiple logic state formation are analyzed in detail. The proposed concept is practically verified by the fabrication of a ternary inverter.
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Affiliation(s)
- Maksim Andreev
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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30
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Kim JY, Park HJ, Lee SH, Seo C, Kim J, Joo J. Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe 2/MoS 2 Heterojunctions Treated with Polymer Acid. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36530-36539. [PMID: 32672032 DOI: 10.1021/acsami.0c09706] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The electrical and optical characteristics of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be improved by surface modification. In this study, distinctive field-effect transistors (FETs) were realized by forming cross-type 2D WSe2/MoS2 p-n heterojunctions through surface treatment using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-PMAA). The FETs were applied to new ternary inverters as multivalued logic circuits (MVLCs). Laser confocal microscope photoluminescence spectroscopy indicated the generation of trions in the WSe2 and MoS2 layers, and the intensity decreased after PMMA-co-PMAA treatment. For the cross-type WSe2/MoS2 p-n heterojunction FETs subjected to PMMA-co-PMAA treatment, the channel current and the region of anti-ambipolar transistor characteristics increased considerably, and ternary inverter characteristics with three stable logic states, "1", "1/2", and "0", were realized. Interestingly, the intermediate logic state 1/2, which results from the negative differential transconductance characteristics, was realized by the turn-on of all component FETs, as the current of the FETs increased after PMMA-co-PMAA treatment. The electron-rich carboxyl acid moieties in PMMA-co-PMAA can undergo coordination with the metal Mo or W atoms present in the Se or S vacancies, respectively, resulting in the modulation of charge density. These features yielded distinctive FETs and ternary inverters for MVLCs using cross-type WSe2/MoS2 heterojunctions.
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Affiliation(s)
- Jun Young Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeon Jung Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Sang-Hun Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Changwon Seo
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
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Scalable lateral heterojunction by chemical doping of 2D TMD thin films. Sci Rep 2020; 10:12970. [PMID: 32737425 PMCID: PMC7395794 DOI: 10.1038/s41598-020-70127-6] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Accepted: 07/20/2020] [Indexed: 01/05/2023] Open
Abstract
Scalable heterojunctions based on two-dimensional transitional metal dichalcogenides are of great importance for their applications in the next generation of electronic and optoelectronic devices. However, reliable techniques for the fabrication of such heterojunctions are still at its infancy. Here we demonstrate a simple technique for the scalable fabrication of lateral heterojunctions via selective chemical doping of TMD thin films. We demonstrate that the resistance of large area MoS2 and MoSe2 thin film, prepared via low pressure chalcogenation of molybdenum film, decreases by up to two orders of magnitude upon doping using benzyl viologen (BV) molecule. X-ray photoelectron spectroscopy (XPS) measurements confirms n-doping of the films by BV molecules. Since thin films of MoS2 and MoSe2 are typically more resistive than their exfoliated and co-evaporation based CVD counterparts, the decrease in resistance by BV doping represents a significant step in the utilization of these samples in electronic devices. Using selective BV doping, we simultaneously fabricated many lateral heterojunctions in 1 cm2 MoS2 and 1 cm2 MoSe2 films. The electrical transport measurements performed across the heterojunctions exhibit current rectification behavior due to a band offset created between the doped and undoped regions of the material. Almost 84% of the fabricated devices showed rectification behavior demonstrating the scalability of this technique.
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Lee SH, Kim JY, Choi S, Lee Y, Lee KS, Kim J, Joo J. Photosensitive n-Type Doping Using Perovskite CsPbX 3 Quantum Dots for Two-Dimensional MSe 2 (M = Mo and W) Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25159-25167. [PMID: 32390418 DOI: 10.1021/acsami.0c04924] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Perovskite CsPbX3 (X = Br, Cl, and I) nanostructures have been intensively studied as they are luminescent, photovoltaic, and photosensitizing active materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with MX2 (M = Mo, W; X = S, Se, Te, etc.) structures have been used in flexible optoelectronic devices. In this study, perovskite green-light-emitting CsPbBr2I1 quantum dots (QDs) and blue-light-emitting CsPb(Cl/Br)3-QDs are utilized to enhance the photoresponsive characteristics of 2D MSe2 (M = Mo and W)-based field-effect transistors (FETs). From laser confocal microscopy photoluminescence (PL) experiments, PL quenching of the perovskite CsPb(Cl/Br)3-QDs and CsPbBr2I1-QDs is observed after hybridization with MoSe2 and WSe2 layers, respectively, which reflects the charge-transfer effect. According to the characteristics of the FETs based on the WSe2, MoSe2, WSe2/CsPbBr2I1-QDs hybrid, and MoSe2/CsPb(Cl/Br)3-QDs hybrid, the p-channel current (with hole mobility) is considerably decreased after the hybridization with the QDs. Notably, under incident light, the n-channel photocurrent and photoresponsivity of the FET are substantially increased, and the threshold voltage is negatively shifted owing to the hybridization with the perovskite QDs. The results show that the photosensitive n-type doping effect on the 2D MoSe2 and WSe2 nanosystems originates from the photogating effect by the trap states after the hybridization with various perovskite CsPbX3-QDs.
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Affiliation(s)
- Sang-Hun Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jun Young Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Sinil Choi
- Department of Advanced Materials, Hannam University, Daejeon 34054, Republic of Korea
| | - Yongjun Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kwang-Sup Lee
- Department of Advanced Materials, Hannam University, Daejeon 34054, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
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Kim KH, Park HY, Shim J, Shin G, Andreev M, Koo J, Yoo G, Jung K, Heo K, Lee Y, Yu HY, Kim KR, Cho JH, Lee S, Park JH. A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory. NANOSCALE HORIZONS 2020; 5:654-662. [PMID: 32226980 DOI: 10.1039/c9nh00631a] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
For increasing the restricted bit-density in the conventional binary logic system, extensive research efforts have been directed toward implementing single devices with a two threshold voltage (VTH) characteristic via the single negative differential resistance (NDR) phenomenon. In particular, recent advances in forming van der Waals (vdW) heterostructures with two-dimensional crystals have opened up new possibilities for realizing such NDR-based tunneling devices. However, it has been challenging to exhibit three VTH through the multiple-NDR (m-NDR) phenomenon in a single device even by using vdW heterostructures. Here, we show the m-NDR device formed on a BP/(ReS2 + HfS2) type-III double-heterostructure. This m-NDR device is then integrated with a vdW transistor to demonstrate a ternary vdW latch circuit capable of storing three logic states. Finally, the ternary latch is extended toward ternary SRAM, and its high-speed write and read operations are theoretically verified.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Hyung-Youl Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jaewoo Shim
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA
| | - Gicheol Shin
- Department of Semiconductor System Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Maksim Andreev
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jiwan Koo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Gwangwe Yoo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Kilsu Jung
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Keun Heo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Yoonmyung Lee
- Department of Semiconductor System Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyun-Yong Yu
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Kyung Rok Kim
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea
| | - Sungjoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
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