Strain-Engineered van der Waals Interfaces of Mixed-Dimensional Heterostructure Arrays

Atomic-Scale Distribution and Evolution of Strain in Pt Nanoparticles Grown on MoS2 Nanosheet

Interface strain significantly affects the band structure and electronic states of metal-nanocrystal-2D-semiconductor heterostructures, impacting system performance. While transmission electron microscopy (TEM) is a powerful tool for studying interface strain, its accuracy may be compromised by sample overlap in high-resolution images due to the unique nature of the metal-nanocrystals-2D-semiconductors heterostructure. Utilizing digital dark-field technology, the substrate influence on metal atomic column contrasts is eliminated, improving the accuracy of quantitative analysis in high-resolution TEM images. Applying this method to investigate Pt on MoS2 surfaces reveals that the heterostructure introduces a tensile strain of ≈3% in Pt nanocrystal. The x-directional linear strain in Pt nanocrystals has a periodic distribution that matches the semi-coherent interface between Pt nanocrystals and MoS2, while the remaining strain components localize mainly on edge atomic steps. These results demonstrate an accurate and efficient method for studying interface strain and provide a theoretical foundation for precise heterostructure fabrication.

Wafer-Scale Atomic Assembly for 2D Multinary Transition Metal Dichalcogenides for Visible and NIR Photodetection

The tunable properties of 2D transition-metal dichalcogenide (TMDs) materials are extensively investigated for high-performance and wavelength-tunable optoelectronic applications. However, the precise modification of large-scale systems for practical optoelectronic applications remains a challenge. In this study, a wafer-scale atomic assembly process to produce 2D multinary (binary, ternary, and quaternary) TMDs for broadband photodetection is demonstrated. The large-area growth of homogeneous MoS2, Ni0.06Mo0.26S0.68, and Ni0.1Mo0.9S1.79Se0.21 is carried out using a succinct coating of the single-source precursor and subsequent thermal decomposition combined with thermal evaporation of the chalcogen powder. The optoelectrical properties of the multinary TMDs are dependent on the combination of heteroatoms. The maximum photoresponsivity of the MoS2-, Ni0.06Mo0.26S0.68-, and Ni0.1Mo0.9S1.79Se0.21-based photodetectors is 3.51 × 10-4, 1.48, and 0.9 A W-1 for 532 nm and 0.063, 0.42, and 1.4 A W-1 for 1064 nm, respectively. The devices exhibited excellent photoelectrical properties, which is highly beneficial for visible and near-infrared (NIR) photodetection.

Strain Self-Adaptive Iron Selenides Toward Stable Na+ -Ion Batteries with Impressive Initial Coulombic Efficiency

High tap density electrodes play a vital role in developing rechargeable batteries with high volumetric capacities, however, developing advanced electrodes with satisfied capacity, excellent structural stability, and achieving the resulted batteries with a high initial Coulombic efficiency (ICE) and good rate capability with long lifespan simultaneously, are still an intractable challenge. Herein, an ultrahigh ICE of 94.1% and stable cycling of carbon-free iron selenides anode is enabled with a high tap density of 2.57 g cm-3 up to 4000 cycles at 5 A g-1 through strain-modulating by constructing a homologous heterostructure. Systematical characterization and theoretical calculation show that the self-adaptive homologous heterointerface alleviates the stress of the iron selenide anodes during cycling processes and subsequently improves the stability of the assembled batteries. Additionally, the well-formed homologous heterostructure also contributes to the rapid Na+ diffusion kinetic, increased charge transfer, and good reversibility of the transformation reactions, endowing the appealing rate capability of carbon-free iron selenides. The proposed design strategy provides new insight and inspiration to aid in the ongoing quest for advanced electrode materials with high tap densities and excellent stability.

Locally Strained 2D Materials: Preparation, Properties, and Applications

2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS2 Thin Film Transistors

Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs. Here, we report a strain engineering approach to apply the biaxial tensile strain to MoS2. Metal-organic chemical vapour deposition (MOCVD)-grown large-area MoS2 films were transferred onto SiO2/Si substrate, followed by the selective removal of the underneath Si. The release of compressive residual stress in the oxide layer induces strain in MoS2 on top of the SiO2 layer. The amount of strain can be precisely controlled by the thickness of oxide stressors. After the transistors were fabricated with strained MoS2 films, the array of strained transistors was transferred onto plastic substrates. This process ensured that the MoS2 channels maintained a consistent tensile strain value across a large area.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

In Situ Nanomechanics: Opportunities Based on Superplastic Nanomolding

In situ nanomechanics, referring to the real-time monitoring of nanomechanical deformation during quantitative mechanical testing, is a key technology for understanding the physical and mechanical properties of nanoscale materials. This perspective reviews the progress of in situ nanomechanics from the aspects of preparation and testing of nanosamples, with a major focus on one-dimensional (1D) nanostructures and discussions of their challenges. We highlight the opportunities provided by in situ nanomechanics combined with the superplastic nanomolding technique, especially in the aspects of regulating physical and chemical properties which are highly exploitable for mechanoelectronics, mechanoluminescence, piezoelectronics, piezomagnetism, piezothermography, and mechanochemistry.

Construction of CuO/Fe2O3 Nanozymes for Intelligent Detection of Glufosinate and Chlortetracycline Hydrochloride

In this work, CuO/Fe2O3 nanozymes with high peroxidase-like activity were synthesized by using hydrothermal and calcination methods. The high-resolution transmission electron microscopy (HRTEM) proved that the heterogeneous interface of CuO/Fe2O3 was the main reason for the high enzyme-like activity. Strong interactions of CuO and Fe2O3 were successfully verified by X-ray absorption near-edge structure (XANES) characterization. Experiments and density functional theory (DFT) calculations were also used to explain the increased enzyme activity. The heterogeneous interface acted as the main active center, facilitating the electron transfer from CuO to Fe2O3. A colorimetric and intelligent sensing system was constructed based on deep learning. Using the peroxidase-like activity of CuO/Fe2O3, a platform for glufosinate pesticides and chlortetracycline hydrochloride (CTC) with the signal "on-off-on" changes were established. The limit of detection (LOD) of glufosinate and CTC was 28 and 0.69 μM, respectively. It was successfully applied in the detection of environmental water and soil. This study can provide an intelligent detection method for environmental monitoring.

A high-performance long-wave infrared photodetector based on a WSe2/PdSe2 broken-gap heterodiode

Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS2 with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS2 FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS2 FETs with ultrahigh carrier mobility of 153 cm2 V-1 s-1 , a large on/off ratio of 4 × 109 , and high saturation current of 342 µA µm-1 . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.

Lattice-Strain Engineering for Heterogenous Electrocatalytic Oxygen Evolution Reaction

The energy efficiency of metal-air batteries and water-splitting techniques is severely constrained by multiple electronic transfers in the heterogenous oxygen evolution reaction (OER), and the high overpotential induced by the sluggish kinetics has become an uppermost scientific challenge. Numerous attempts are devoted to enabling high activity, selectivity, and stability via tailoring the surface physicochemical properties of nanocatalysts. Lattice-strain engineering as a cutting-edge method for tuning the electronic and geometric configuration of metal sites plays a pivotal role in regulating the interaction of catalytic surfaces with adsorbate molecules. By defining the d-band center as a descriptor of the structure-activity relationship, the individual contribution of strain effects within state-of-the-art electrocatalysts can be systematically elucidated in the OER optimization mechanism. In this review, the fundamentals of the OER and the advancements of strain-catalysts are showcased and the innovative trigger strategies are enumerated, with particular emphasis on the feedback mechanism between the precise regulation of lattice-strain and optimal activity. Subsequently, the modulation of electrocatalysts with various attributes is categorized and the impediments encountered in the practicalization of strained effect are discussed, ending with an outlook on future research directions for this burgeoning field.

A natural indirect-to-direct band gap transition in artificially fabricated MoS2 and MoSe2 flowers

Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS₂ and MoSe₂ bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS₂ (MoSe₂) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS₂ (MoSe₂) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS₂ flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.

Strain-tunable valley polarization and localized excitons in monolayer WSe2

Monolayer transition metal dichalcogenides (TMDs) have a crystalline structure with broken spatial inversion symmetry, making them promising candidates for valleytronic applications. However, the degree of valley polarization is usually not high due to the presence of intervalley scattering. Here, we use the nanoindentation technique to fabricate strained structures of WSe₂ on Au arrays, thus demonstrating the generation and detection of strained localized excitons in monolayer WSe₂. Enhanced emission of strain-localized excitons was observed as two sharp photoluminescence (PL) peaks measured using low-temperature PL spectroscopy. We attribute these emerging sharp peaks to excitons trapped in potential wells formed by local strains. Furthermore, the valley polarization of monolayer WSe₂ is modulated by a magnetic field, and the valley polarization of strained localized excitons is increased, with a high value of up to approximately 79.6%. Our results show that tunable valley polarization and localized excitons can be realized in WSe₂ monolayers, which may be useful for valleytronic applications.

Insights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending

Strain engineering is an important strategy to modulate the electronic and optical properties of two-dimensional (2D) semiconductors. In experiments, an effective and feasible method to induce strains on 2D semiconductors is the out-of-plane bending. However, in contrast to the in-plane methods, it will generate a combined strain effect on 2D semiconductors, which deserves further explorations. In this work, we theoretically investigate the carrier transport-related electronic properties of arsenene, antimonene, phosphorene, and MoS₂under the out-of-plane bending. The bending effect can be disassembled into the in-plane and out-of-plane rolling strains. We find that the rolling always degrades the transport performance, while the in-plane strain could boost carrier mobilities by restraining the intervalley scattering. In other words, pursuing the maximum in-plane strain at the expense of minimum rolling should be the primary strategy to promote transports in 2D semiconductors through bending. Electrons in 2D semiconductors usually suffer from the serious intervalley scattering caused by optical phonons. The in-plane strain can break the crystal symmetry and separate nonequivalent energy valleys at band edges energetically, confining carrier transports at the Brillouin zone Γ point and eliminating the intervalley scattering. Investigation results show that the arsenene and antimonene are suitable for the bending technology, because of their small layer thicknesses which can relieve the rolling burden. Their electron and hole mobilities can be doubled simultaneously, compared with their unstrained 2D structures. From this study, the rules for the out-of-plane bending technology towards promoting transport abilities in 2D semiconductors are obtained.

Preparation, properties and applications of two-dimensional superlattices

As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.

Engineering interface structures for heterojunction photocatalysts

Solar photocatalysis is the most ideal solution to global energy concerns and environmental deterioration nowadays. The heterojunction combination has become one of the most successful and effective strategies to design and manufacture composite photocatalysts. Heterojunction structures are widely documented to markedly improve the photocatalytic behavior of materials by enhancing the separation and transfer of photogenerated charges, widening the light absorption range, and broadening redox potentials, which are attributed to the presence of both build-in electric fields at the interface of two different materials and the complementarity between different electron structures. So far, a large number of heterojunction photocatalytic materials have been reported and applied for water splitting, reduction of carbon dioxide and nitrogen, environmental cleaning, etc. This review outlines the recent accomplishments in the design and modification of interface structures in heterojunction photocatalysts, aiming to provide some useful perspectives for future research in this field.

Ferroelectric-gated MoSe2photodetectors with high photoresponsivity

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe₂thin flakes on ferroelectric 0.7PbMg_1/3Nb_2/3O₃-0.3PbTiO₃(PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W^-1and the detectivity to 3.2 × 10¹⁰Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.

3D Optical Heterostructure Patterning by Spatially Allocating Nanoblocks on a Printed Matrix

Heterostructures have attracted enormous interest due to the properties arising from the coupling and synergizing between multiscale structures and the promising applications in electronics, mechanics, and optics. However, it is challenging for current technologies to precisely integrate cross-scale micro/nanomaterials in three dimensions (3D). Herein, we realize the precise spatial allocation of nanoblocks on micromatrices and programmable 3D optical heterostructure patterning via printing-assisted self-assembly. This bottom-up approach fully exploits the advantages of printing in on-demand patterning, low cost, and mass production, as well as the merits of solution-based colloidal assembly for simple structuring and high-precision regulating, which facilitates the patterned integration of multiscale materials. Importantly, the luminescent nanoparticle assembly can be accurately coupled to the dye-doped polymer matrix by regulating the interface wettability, enabling facile multicolor tuning in a single heterostructure. Thus, the heterostructure can be specially encoded for anticounterfeiting and encryption applications due to the morphology-dependent and interface-coupling-induced luminescence. Moreover, with the capability to achieve single-nanoparticle resolution, these findings have great potential for designing photonic superstructures and advanced optical devices.

Strong Anisotropic Optical Properties by Rolling up MoS2 Nanoflake

Although anisotropic two-dimensional materials have attracted great scientific interest, the anisotropy of those materials is limited to particular crystallographic directions. Herein, with dimension confining, MoS₂ nanoscrolls are successfully fabricated by a rolling-up process after dropping an ethanol-water solution on a chemical vapor deposition-grown MoS₂ monolayer. The anisotropic vibrational and optical properties are systematically studied by angle-resolved polarized spectroscopy, including Raman, photoluminescence, and reflection measurements. Upon comparing the photoluminescence results between MoS₂ nanoscrolls and nanosheets, an obvious PL quenching phenomenon is observed, indicating the efficient separation of photon-induced carriers. Moreover, the time-resolved PL test identifying the lifetime of the carriers is decreased to 303 ps in the nanoscrolls, indicating a higher carrier-transfer efficiency. In summary, our work demonstrates the strong anisotropic optical properties of MoS₂ nanorolls, showing the nanoscrolls are a promising candidate for the fabrication of multifunctional devices.

All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors

Ultrathin 2D semiconductor devices are considered to have beyond-silicon potential but are severely troubled by the high Schottky barriers of the metal-semiconductor contacts, especially for p-type semiconductors. Due to the severe Fermi-level pinning effect and the lack of conventional semimetals with high work functions, their Schottky hole barriers are hardly removed. Here, an all-van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS₂ semimetal is reported, which achieves a zero Schottky barrier height of 3 ± 9 meV and a high field-effect mobility of ≈1304 cm² V^-1 s^-1 . The formation of such contacts can be attributed to the higher work function of ≈4.95 eV of the 1T'-WS₂ semimetal, which is in sharp contrast with low work function (4.1-4.7 eV) of conventional semimetals. The study defines an available strategy for eliminating the Schottky barrier of metal-semiconductor contacts, facilitating 2D-semiconductor-based electronics and optoelectronics to extend Moore's law.

Strain Engineering: A Boosting Strategy for Photocatalysis

Whilst the photocatalytic technique is considered to be one of the most significant routes to address the energy crisis and global environmental challenges, the solar-to-chemical conversion efficiency is still far from satisfying practical industrial requirements, which can be traced to the suboptimal bandgap and electronic structure of photocatalysts. Strain engineering is a universal scheme that can finely tailor the bandgap and electronic structure of materials, hence supplying a novel avenue to boost their photocatalytic performance. Accordingly, to explore promising directions for certain breakthroughs in strained photocatalysts, an overview on the recent advances of strain engineering from the basics of strain effect, creations of strained materials, as well as characterizations and simulations of strain level is provided. Besides, the potential applications of strain engineering in photocatalysis are summarized, and a vision for the future controllable-electronic-structure photocatalysts by strain engineering is also given. Finally, perspectives on the challenges for future strain-promoted photocatalysis are discussed, placing emphasis on the creation and decoupling of strain effect, and the modification of theoretical frameworks.

Strain-Modulated Magnetism in MoS2

Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.

Strain-Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS2

2D Semiconductors are promising in the development of next-generation photodetectors. However, the performances of 2D photodetectors are largely limited by their poor light absorption (due to ultrathin thickness) and small detection range (due to large bandgap). To overcome the limitations, a strain-plasmonic coupled 2D photodetector is designed by mechanically integrating monolayer MoS₂ on top of prefabricated Au nanoparticle arrays. Within this structure, the large biaxial tensile strain can greatly reduce the MoS₂ bandgap for broadband photodetection, and at the same time, the nanoparticles can significantly enhance the light intensity around MoS₂ with much improved light absorption. Together, the strain-plasmonic coupled photodetector can broaden the detection range by 60 nm and increase the signal-to-noise ratio by 650%, representing the ultimate optimization of detection range and detection intensity at the same time. The strain-plasmonic coupling effect is further systematically characterized and confirmed by using Raman and photoluminescence spectrophotometry. Furthermore, the existence of built-in potential and photo-switching behavior is demonstrated between the strained and unstrained region, constructing a self-powered homojunction photodetector. This approach provides a simple strategy to couple strain effect and plasmonic effect, which can provide a new strategy for designing high-performance and broadband 2D optoelectronic devices.

Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays

Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (V_B^-) centers. Here, we demonstrate a scalable method to enhance the V_B^- emission using an array of SiO₂ nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the V_B^- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the V_B^- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.

Holey Substrate-Directed Strain Patterning in Bilayer MoS2

Key properties of two-dimensional (2D) layered materials are highly strain tunable, arising from bond modulation and associated reconfiguration of the energy bands around the Fermi level. Approaches to locally controlling and patterning strain have included both active and passive elastic deformation via sustained loading and templating with nanostructures. Here, by float-capturing ultrathin flakes of single-crystal 2H-MoS₂ on amorphous holey silicon nitride substrates, we find that highly symmetric, high-fidelity strain patterns are formed. The hexagonally arranged holes and surface topography combine to generate highly conformal flake-substrate coverage creating patterns that match optimal centroidal Voronoi tessellation in 2D Euclidean space. Using TEM imaging and diffraction, as well as AFM topographic mapping, we determine that the substrate-driven 3D geometry of the flakes over the holes consists of symmetric, out-of-plane bowl-like deformation of up to 35 nm, with in-plane, isotropic tensile strains of up to 1.8% (measured with both selected-area diffraction and AFM). Atomistic and image simulations accurately predict spontaneous formation of the strain patterns, with van der Waals forces and substrate topography as the input parameters. These results show that predictable patterns and 3D topography can be spontaneously induced in 2D materials captured on bare, holey substrates. The method also enables electron scattering studies of precisely aligned, substrate-free strained regions in transmission mode.

Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities

Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure

Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS2 is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 107 ). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS2 memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.

Facile Fabrication of Ultrasensitive Honeycomb Nano-Mesh Ultraviolet Photodetectors Based on Self-Assembled Plasmonic Architectures

The dilemma of harvesting fugacious photons by photoactive nanomaterials of limited absorption volume fundamentally hinders the photodetection at relatively lower light intensities. To address the insufficient light utilization efficiency, spatial light confinement becomes an effective and promising approach. High-performance ultraviolet (UV) photodetectors based on the self-assembled Au nanoparticle/ZnO honeycomb nano-mesh (Au NP/ZnO HN) are demonstrated through a facile solution-processed method on anodized aluminum oxide (AAO) membranes. The congregated geometry of the self-assembled ZnO HNs is well-defined by the AAO matrixes, which also effectively collects the transmitted light beams back to the photoactive layers. Benefiting from surface plasmon resonance, the enhanced absorption of the ZnO HNs is eventually obtained via the recursive light utilization between Au NPs and AAO matrixes as a function of AAO pore diameters (D_AAO). With a systematic control of the photodetector configurations, an optimal performance is obtained with growth duration of the ZnO HNs for 40 min on the AAO substrates (D_AAO = 100 nm), and an excellent responsivity of 23.4 A/W is witnessed even under a relatively low light intensity of 0.4 mW/cm², providing a novel route to realize high-performance UV photodetection under low-power illumination.

Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse

Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS₂/WSe₂ with a bilateral accumulation region design and a big band offset by utilizing thick PtS₂ as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 10⁸ and on/off ratio over 10⁸ at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 10⁵ due to its ultralow forward current and a comparable photodetectivity of 3.8 × 10¹⁰ Jones. In addition, the response time of such a photodetector reaches 8 μs owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.

Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.

Mechanics of free-standing inorganic and molecular 2D materials

The discovery of graphene has triggered a great interest in inorganic as well as molecular two-dimensional (2D) materials. In this review, we summarize recent progress in the mechanical characterization of free-standing 2D materials, such as graphene, hexagonal boron nitride (hBN), transition metal-dichalcogenides, MXenes, black phosphor, carbon nanomembranes (CNMs), 2D polymers, 2D metal organic frameworks (MOFs) and covalent organic frameworks (COFs). Elastic, fracture, bending and interfacial properties of these materials have been determined using a variety of experimental techniques including atomic force microscopy based nanoindentation, in situ tensile/fracture testing, bulge testing, Raman spectroscopy, Brillouin light scattering and buckling-based metrology. Additionally, we address recent advances of 2D materials in a variety of mechanical applications, including resonators, microphones and nanoelectromechanical sensors. With the emphasis on progress and challenges in the mechanical characterization of inorganic and molecular 2D materials, we expect a continuous growth of interest and more systematic experimental work on the mechanics of such ultrathin nanomaterials.

Strain Engineering in 2D Material-Based Flexible Optoelectronics

Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.

Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection

The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 10⁴ A W^-1 ) and detectivity (D* = 6.83 × 10¹⁴ Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τ_R  = 3.97 s, τ_D  = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.

Defect-Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters

Ultrathin molybdenum disulfide (MoS₂ ) presents ideal properties for building next-generation atomically thin circuitry. However, it is difficult to construct logic units of MoS₂ monolayer using traditional silicon-based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS₂ monolayer logic inverters. By utilizing the energy-matched electron induction of the solution process, numerous pure and lattice-stable monosulfur vacancies (V_monos ) are introduced to modulate the electronic structure of monolayer MoS₂ via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS₂ and improves the work function by 100 meV. Under modulation of V_monos , an atomically thin homogenous monolayer MoS₂ logic inverter with a voltage gain of 4 is successfully constructed. A brand-new and practical design route of defect modulation for 2D-based circuit development is provided.