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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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2
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Kim JH, Sarkar S, Wang Y, Taniguchi T, Watanabe K, Chhowalla M. Room Temperature Negative Differential Resistance with High Peak Current in MoS 2/WSe 2 Heterostructures. NANO LETTERS 2024; 24:2561-2566. [PMID: 38363877 PMCID: PMC10906070 DOI: 10.1021/acs.nanolett.3c04607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/18/2024]
Abstract
Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS2 and WSe2 using van der Waals (vdW) contacts. The p-n junction shows negative differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the triangular barrier formed by applying a global back-gate bias (VGS). We also show that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel barrier between MoS2 and WSe2 leads to the formation of sharp band edges and unintentional inelastic tunnelling current. The devices based on vdW contacts, global VGS, and h-BN tunnel barriers exhibit NDR with a peak current (Ipeak) of 315 μA, suggesting that the approach may be useful for applications.
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Affiliation(s)
- Jung Ho Kim
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Soumya Sarkar
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Yan Wang
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Manish Chhowalla
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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3
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Zhang Z, Zhang B, Wang Y, Wang M, Zhang Y, Li H, Zhang J, Song A. Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes. NANO LETTERS 2023; 23:8132-8139. [PMID: 37668256 PMCID: PMC10510586 DOI: 10.1021/acs.nanolett.3c02281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/27/2023] [Indexed: 09/06/2023]
Abstract
The resonant tunneling diode (RTD) is one of the very few room-temperature-operating quantum devices to date that is able to exhibit negative differential resistance. However, the reported key figure of merit, the current peak-to-valley ratio (PVR), of graphene RTDs has been up to only 3.9 at room temperature thus far. This remains very puzzling, given the atomically flat interfaces of the 2D materials. By varying the active area and perimeter of RTDs based on a graphene/hexagonal boron nitride/graphene heterostructure, we discovered that the edge doping can play a dominant role in determining the resonant tunneling, and a large area-to-perimeter ratio is necessary to obtain a high PVR. The understanding enables establishing a novel design rule and results in a PVR of 14.9, which is at least a factor of 3.8 higher than previously reported graphene RTDs. Furthermore, a theory is developed allowing extraction of the edge doping depth for the first time.
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Affiliation(s)
- Zihao Zhang
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Baoqing Zhang
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yiming Wang
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Mingyang Wang
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yifei Zhang
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Hu Li
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Jiawei Zhang
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
- Suzhou
Research Institute, Shandong University, Suzhou 215123, China
| | - Aimin Song
- Shandong
Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
- Department
of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United
Kingdom
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4
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Kim JH, Kim SG, Kim SH, Han KH, Kim J, Yu HY. Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37339325 DOI: 10.1021/acsami.3c03213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.
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Affiliation(s)
- Jong-Hyun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Seung-Geun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Seung-Hwan Kim
- Center for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Korea
| | - Kyu-Hyun Han
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Jiyoung Kim
- Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, Texas 75080-3021, United States
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
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5
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Zubair M, Wang H, Zhao Q, Kang M, Xia M, Luo M, Dong Y, Duan S, Dai F, Wei W, Li Y, Wang J, Li T, Fang Y, Liu Y, Xie R, Fu X, Dong L, Miao J. Gate-Tunable van der Waals Photodiodes with an Ultrahigh Peak-to-Valley Current Ratio. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300010. [PMID: 37058131 DOI: 10.1002/smll.202300010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2023] [Revised: 03/08/2023] [Indexed: 06/19/2023]
Abstract
Photodetectors and imagers based on 2D layered materials are currently subject to a rapidly expanding application space, with an increasing demand for cost-effective and lightweight devices. However, the underlying carrier transport across the 2D homo- or heterojunction channel driven by the external electric field, like a gate or drain bias, is still unclear. Here, a visible-near infrared photodetector based on van der Waals stacked molybdenum telluride (MoTe2 ) and black phosphorus (BP) is reported. The type-I and type-II band alignment can be tuned by the gate and drain voltage combined showing a dynamic modulation of the conduction polarity and negative differential transconductance. The heterojunction devices show a good photoresponse to light illumination ranging from 520-2000 nm. The built-in potential at the MoTe2 /BP interface can efficiently separate photoexcited electron-hole pairs with a high responsivity of 290 mA W-1 , an external quantum efficiency of 70%, and a fast photoresponse of 78 µs under zero bias.
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Affiliation(s)
- Muhammad Zubair
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qixiao Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Mengyang Kang
- School of Microelectronics, Xidian University, Xi'an, 710071, P. R. China
| | - Mengjia Xia
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Min Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yi Dong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shikun Duan
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wenrui Wei
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunhai Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Jinjin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tangxin Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yongzheng Fang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 200235, P. R. China
| | - Yufeng Liu
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 200235, P. R. China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiao Fu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lixin Dong
- City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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6
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Fu J, Wang J, He X, Ming J, Wang L, Wang Y, Shao H, Zheng C, Xie L, Ling H. Pseudo-transistors for emerging neuromorphic electronics. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2180286. [PMID: 36970452 PMCID: PMC10035954 DOI: 10.1080/14686996.2023.2180286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 01/15/2023] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
Artificial synaptic devices are the cornerstone of neuromorphic electronics. The development of new artificial synaptic devices and the simulation of biological synaptic computational functions are important tasks in the field of neuromorphic electronics. Although two-terminal memristors and three-terminal synaptic transistors have exhibited significant capabilities in the artificial synapse, more stable devices and simpler integration are needed in practical applications. Combining the configuration advantages of memristors and transistors, a novel pseudo-transistor is proposed. Here, recent advances in the development of pseudo-transistor-based neuromorphic electronics in recent years are reviewed. The working mechanisms, device structures and materials of three typical pseudo-transistors, including tunneling random access memory (TRAM), memflash and memtransistor, are comprehensively discussed. Finally, the future development and challenges in this field are emphasized.
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Affiliation(s)
- Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Jie Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - He Shao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Chaoyue Zheng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
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7
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Dastgeer G, Nisar S, Shahzad ZM, Rasheed A, Kim D, Jaffery SHA, Wang L, Usman M, Eom J. Low-Power Negative-Differential-Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 10:e2204779. [PMID: 36373733 PMCID: PMC9811440 DOI: 10.1002/advs.202204779] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Revised: 10/02/2022] [Indexed: 06/16/2023]
Abstract
Van der Waals (vdW) heterostructures composed of atomically thin two-dimensional (2D) materials have more potential than conventional metal-oxide semiconductors because of their tunable bandgaps, and sensitivities. The remarkable features of these amazing vdW heterostructures are leading to multi-functional logic devices, atomically thin photodetectors, and negative differential resistance (NDR) Esaki diodes. Here, an atomically thin vdW stacking composed of p-type black arsenic (b-As) and n-type tin disulfide (n-SnS2 ) to build a type-III (broken gap) heterojunction is introduced, leading to a negative differential resistance device. Charge transport through the NDR device is investigated under electrostatic gating to achieve a high peak-to-valley current ratio (PVCR), which improved from 2.8 to 4.6 when the temperature is lowered from 300 to 100 K. At various applied-biasing voltages, all conceivable tunneling mechanisms that regulate charge transport are elucidated. Furthermore, the real-time response of the NDR device is investigated at various streptavidin concentrations down to 1 pm, operating at a low biasing voltage. Such applications of NDR devices may lead to the development of cutting-edge electrical devices operating at low power that may be employed as biosensors to detect a variety of target DNA (e.g., ct-DNA) and protein (e.g., the spike protein associated with COVID-19).
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Affiliation(s)
- Ghulam Dastgeer
- Department of Physics and AstronomySejong UniversitySeoul05006Korea
| | - Sobia Nisar
- Department of Electrical EngineeringSejong UniversitySeoul05006Korea
| | - Zafar Muhammad Shahzad
- Department of Chemical & Polymer EngineeringUniversity of Engineering and TechnologyLahore, Faisalabad Campus38000Pakistan
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Aamir Rasheed
- Department of Physics and Interdisciplinary Course of Physics and ChemistrySungkyunkwan UniversitySuwonGyeonggi‐do16419Korea
| | - Deok‐kee Kim
- Department of Electrical EngineeringSejong UniversitySeoul05006Korea
| | - Syed Hassan Abbas Jaffery
- HMC (Hybrid Materials Center)Department of Nanotechnology and Advanced Materials Engineeringand Graphene Research InstituteSejong UniversitySeoul05006Korea
| | - Liang Wang
- Department of BioinformaticsSchool of Medical Informatics and EngineeringXuzhou Medical UniversityXuzhou221006China
| | - Muhammad Usman
- Department of BioinformaticsSchool of Medical Informatics and EngineeringXuzhou Medical UniversityXuzhou221006China
| | - Jonghwa Eom
- Department of Physics and AstronomySejong UniversitySeoul05006Korea
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8
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Gao P, Yang M, Wang C, Li H, Yang B, Zheng Z, Huo N, Gao W, Luo D, Li J. Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics. NANOSCALE 2022; 14:14603-14612. [PMID: 36156046 DOI: 10.1039/d2nr04165k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment via low-pressure physical vapor deposition (LPPVD) and dry transfer method. The performance compared with the distinctive thickness of anisotropic SnS component was first studied. The fabricated device with a thick (80 nm) SnS nanosheet exhibits a larger rectification ratio exceeding 103. Moreover, the SnS/InSe heterostructure shows a broadband spectral photoresponse from 405 to 1100 nm with a significant photovoltaic effect. Due to efficient photogenerated carrier separation across the wide depletion region at zero bias, the device with thinner (12.4 nm) SnS exhibits trade-off photoresponse performance with a maximum responsivity of 215 mA W-1, an external quantum efficiency of 42.2%, specific detectivity of 1.05 × 1010 Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.
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Affiliation(s)
- Peng Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Mengmeng Yang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Chuanglei Wang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Hengyi Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Baoxiang Yang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, PR China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
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9
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Yuan Y, Yu H, Podpirka A, Ostdiek P, Srinivasan R, Ramanathan S. Negative Differential Resistance in Oxygen-ion Conductor Yttria-stabilized Zirconia for Extreme Environment Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:40116-40125. [PMID: 35997538 DOI: 10.1021/acsami.2c09944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Oxygen-ion conductors have traditionally been studied in the context of high temperature (≈ 873 to 1773 K) energy conversion and sensor technologies. However, there is growing interest in exploring ion-based electronics for harsh environments (400 to 573 K) that represents an emerging field. Here, we utilize a blocking electrode to modify the interface properties of oxygen-ion conducting yttria-stabilized zirconia (YSZ) thin film electrochemical cells. The modified YSZ cell exhibits negative differential resistance (NDR) in the current-voltage curves at 543 K in the air. A double-sweep method and analysis of the scan-rate dependence of the j-V characteristics clearly suggest that the NDR behavior is formed by the reduction reaction of adsorbed oxygen or platinum oxide at the YSZ/Pt interface. A stable and switchable YSZ NDR device is realized with a high peak-to-valley current ratio of 5.8 at 543 K. Utilizing the NDR effect, we demonstrate a proof-of-concept switchable ternary inverter by interfacing with a silicon transistor. Oxygen-ion conductors and their interfaces offer new directions to design electronics for extreme environments.
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Affiliation(s)
- Yifan Yuan
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Adrian Podpirka
- Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, United States
| | - Paul Ostdiek
- Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, United States
| | - Rengaswamy Srinivasan
- Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, United States
| | - Shriram Ramanathan
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
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10
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Chen JB, Zhang K, Jiang ZJ, Gao LY, Xu JW, Chen JT, Zhao Y, Li Y, Wang CW. Cu xS nanosheets with controllable morphology and alignment for memristor devices. NANOTECHNOLOGY 2022; 33:245204. [PMID: 35272277 DOI: 10.1088/1361-6528/ac5ca4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 03/10/2022] [Indexed: 06/14/2023]
Abstract
In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For this reason, to optimize ions migration paths in the dielectric layer itself in the Al/CuxS/Cu structure, uniform CuxS nanosheets films have been synthesized using anodization for various time spans. And the Al/CuxS/Cu devices show a low operating voltage of less than 0.3 V and stable RS performance. At the same time, a reversible negative differential resistance (NDR) behavior is also demonstrated. And then, the mechanism of repeatable coexistence of RS effect and NDR phenomenon is investigated exhaustively. Analyses suggest that the combined physical model of space-charge limited conduction mechanism and conductive filaments bias-induced migration of Cu ions within the CuxS dielectric layer is responsible for the RS operation, meanwhile, a Schottky barrier caused by copper vacancy at the CuxS/Cu interface is demonstrated to explain the NDR phenomenon. This work will develop a new way to optimize the performance of non-volatile memory with multiple physical attributes in the future.
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Affiliation(s)
- Jian Biao Chen
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Kai Zhang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Zi Jin Jiang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Li Ye Gao
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Jiang Wen Xu
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Jiang Tao Chen
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Yun Zhao
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Yan Li
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
| | - Cheng Wei Wang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People's Republic of China
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11
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Chang YR, Nishimura T, Nagashio K. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43282-43289. [PMID: 34478258 DOI: 10.1021/acsami.1c13279] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Surface oxidation is an unneglectable problem for 2D semiconductors because it hinders the practical application of 2D material-based devices. In this research, the oxidation of layered materials is investigated by a thermodynamic approach to verify their oxidation tendency. It was found that almost all 2D materials are thermodynamically unstable in the presence of oxygen at room temperature. Two potential solutions for surface oxidation are proposed in this work: (i) the conversion of the surface oxides to functional oxides through the deposition of active metals and (ii) the recovery of original 2D materials from the surface oxides by 2D material heterostructure formation with the same chalcogen group. Supported by thermodynamic calculations, both approaches are feasible to ameliorate the surface oxides of 2D materials by the appropriate selection of metals for deposition or 2D materials for heterostructure formation. Thermodynamic data of 64 elements and 75 2D materials are included and compared in this research, which can improve gate insulator or electrode contact material selection in 2D devices to solve the surface oxidation issue. For instance, yttrium and titanium are good candidates for surface oxide conversion, while zirconium and hafnium chalcogenide can trigger the recovery of original 2D materials from their surface oxides. The systematic diagrams presented in this work can serve as a guideline for considering surface oxidation in future device fabrication from various 2D materials.
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Affiliation(s)
- Yih-Ren Chang
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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12
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Albano LGS, de Camargo DHS, Schleder GR, Deeke SG, Vello TP, Palermo LD, Corrêa CC, Fazzio A, Wöll C, Bufon CCB. Room-Temperature Negative Differential Resistance in Surface-Supported Metal-Organic Framework Vertical Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101475. [PMID: 34288416 DOI: 10.1002/smll.202101475] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Revised: 05/04/2021] [Indexed: 06/13/2023]
Abstract
The advances of surface-supported metal-organic framework (SURMOF) thin-film synthesis have provided a novel strategy for effectively integrating metal-organic framework (MOF) structures into electronic devices. The considerable potential of SURMOFs for electronics results from their low cost, high versatility, and good mechanical flexibility. Here, the first observation of room-temperature negative differential resistance (NDR) in SURMOF vertical heterojunctions is reported. By employing the rolled-up nanomembrane approach, highly porous sub-15 nm thick HKUST-1 films are integrated into a functional device. The NDR is tailored by precisely controlling the relative humidity (RH) around the device and the applied electric field. The peak-to-valley current ratio (PVCR) of about two is obtained for low voltages (<2 V). A transition from a metastable state to a field emission-like tunneling is responsible for the NDR effect. The results are interpreted through band diagram analysis, density functional theory (DFT) calculations, and ab initio molecular dynamics simulations for quasisaturated water conditions. Furthermore, a low-voltage ternary inverter as a multivalued logic (MVL) application is demonstrated. These findings point out new advances in employing unprecedented physical effects in SURMOF heterojunctions, projecting these hybrid structures toward the future generation of scalable functional devices.
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Affiliation(s)
- Luiz G S Albano
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Davi H S de Camargo
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
| | - Gabriel R Schleder
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Federal University of ABC (UFABC), Santo André, São Paulo, 09210-580, Brazil
| | - Samantha G Deeke
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
| | - Tatiana P Vello
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Department of Physical Chemistry, Institute of Chemistry (IQ), University of Campinas (UNICAMP), Campinas, São Paulo, 13084-862, Brazil
| | - Leirson D Palermo
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Cátia C Corrêa
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Adalberto Fazzio
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Federal University of ABC (UFABC), Santo André, São Paulo, 09210-580, Brazil
| | - Christof Wöll
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), 76344, Eggenstein-Leopoldshafen, Germany
| | - Carlos C B Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
- Department of Physical Chemistry, Institute of Chemistry (IQ), University of Campinas (UNICAMP), Campinas, São Paulo, 13084-862, Brazil
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13
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Wu F, Tian H, Yan Z, Ren J, Hirtz T, Gou G, Shen Y, Yang Y, Ren TL. Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26161-26169. [PMID: 34032407 DOI: 10.1021/acsami.1c03959] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the IDS mappings by sweeping VDS under different VGS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.
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Affiliation(s)
- Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Zhaoyi Yan
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jie Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Thomas Hirtz
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Guangyang Gou
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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14
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Woo G, Lee EK, Yoo H, Kim T. Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:25072-25081. [PMID: 34013714 DOI: 10.1021/acsami.1c02880] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Negative differential resistance (NDR) can be applied to various devices such as reflection amplifiers, relaxation oscillators, and neuromorphic devices. However, the development of NDR photodetectors with uniformity, stability, and reproducibility for use in practical applications is still lacking. Herein, we demonstrate highly reliable NDR photodetectors by constructing a MoS2/p-Si heterostructure. Owing to the formation of a MoS2 layer with uniform thickness by the plasma-enhanced sulfurization process, a 100% yield with high uniformity (peak-to-valley ratio = 1.195 ± 0.065) was achieved for 120 devices. Furthermore, the proposed NDR photodetectors exhibit unprecedented high cycle-to-cycle endurance, which maintains their NDR characteristics through 100 000 consecutive sweeps without operational failure. This work paves the way for the development of a reliable NDR device and reports unprecedented results of high uniformity, reproducibility, and robustness for practical applications.
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Affiliation(s)
- Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Eun Kwang Lee
- Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
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15
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Cheng R, Yin L, Hu R, Liu H, Wen Y, Liu C, He J. Modulation of Negative Differential Resistance in Black Phosphorus Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008329. [PMID: 33998073 DOI: 10.1002/adma.202008329] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Negative differential resistance (NDR), which describes the current decrease as the applied bias increases, holds great potential for varieties of electronic applications including radio-frequency oscillators, multipliers, and multivalue logics. Here, the modulation of a unique NDR effect in ambipolar black phosphorus (BP) transistors is reported, which is activated by specific electrical field dependence of lateral carrier distribution and is distinct from conventional NDR devices that rely on quantum tunneling. The NDR device exhibits a high peak current density (34 µA µm-1 ) and a high operating temperature. More importantly, due to the strong coupling between the channel and the gate electrode, both the NDR peak current and peak/valley voltages can be effectively modulated by the electrostatic gate. Furthermore, it is demonstrated that light can serve as an additional terminal for NDR modulation. The findings could provide an important insight into the transport behavior of BP transistors and contribute to the design of ambipolar-semiconductor-based electrical circuits.
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Affiliation(s)
- Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Rui Hu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Huijun Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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16
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Takeyama K, Moriya R, Okazaki S, Zhang Y, Masubuchi S, Watanabe K, Taniguchi T, Sasagawa T, Machida T. Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe 2 in WSe 2/h-BN/p +-MoS 2 Junction. NANO LETTERS 2021; 21:3929-3934. [PMID: 33900095 DOI: 10.1021/acs.nanolett.1c00555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Few-layer transition metal dichalcogenides (TMDs) exhibit out-of-plane wave function confinement with subband quantization. This phenomenon is totally absent in monolayer crystals and is regarded as resulting from a naturally existing van der Waals quantum-well state. Because the energy separation between the subbands corresponds to the infrared wavelength range, few-layer TMDs are attractive for their potential to facilitate the application of TMD semiconductors as infrared photodetectors and emitters. Here, we report a few-layer WSe2/h-BN tunnel barrier/multilayer p+-MoS2 tunnel junction to access the quantized subbands of few-layer WSe2 via tunneling spectroscopy measurements. Resonant tunneling and a negative differential resistance were observed when the top of the valence band Γ-point of p+-MoS2 was energetically aligned with one of the empty subbands at the Γ-point of few-layer WSe2. These results demonstrate a critical step toward the utilization of subband quantization in few-layer TMD materials for infrared optoelectronics applications.
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Affiliation(s)
- Kei Takeyama
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Rai Moriya
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Shota Okazaki
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan
| | - Yijin Zhang
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takao Sasagawa
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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17
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Lv B, Yan Z, Xue W, Yang R, Li J, Ci W, Pang R, Zhou P, Liu G, Liu Z, Zhu W, Xu X. Layer-dependent ferroelectricity in 2H-stacked few-layer α-In 2Se 3. MATERIALS HORIZONS 2021; 8:1472-1480. [PMID: 34846455 DOI: 10.1039/d0mh01863e] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Atomically thin two-dimensional (2D) van der Waals materials have exhibited many exotic layer-dependent physical properties including electronic structure, magnetic order, etc. Here, we report a striking even-odd layer dependent oscillation in the ferroelectric polarization of 2H-stacked few-layer α-In2Se3 nanoflakes. As characterized by piezoresponse force microscopy (PFM), when the in-plane (IP) electric polarization of 2H-stacked α-In2Se3 films is electrically aligned, the out-of-plane (OOP) polarization of the odd-layer (OL) samples is obviously larger than that of the even-layer (EL) ones. Similarly, samples with electrically aligned OOP polarization also show even-odd layer dependent IP polarization. Such an even-odd oscillation, as confirmed by the density functional theory calculations, can be attributed to the strong intercorrelation of the IP and OOP electric polarization of the α-In2Se3 monolayers and the special 2H-stacking structure of a 180 degree IP rotation with respect to the adjacent layers. Moreover, a negative differential resistance, interestingly, is induced by the polarization flip with a small coercive field of ∼1.625 kV cm-1, and its peak-to-valley ratio can be tuned up to ∼7 by the gate. This work demonstrates that the delicate stacking geometry of multilayer α-In2Se3 can bring an interesting even-odd ferroelectric effect, enriching the layer-dependent physical properties of the 2D materials family.
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Affiliation(s)
- Baohua Lv
- School of Chemistry and Materials Science of Shanxi Normal University & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Linfen 041004, China.
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18
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Sasaki T, Ueno K, Taniguchi T, Watanabe K, Nishimura T, Nagashio K. Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory. ACS NANO 2021; 15:6658-6668. [PMID: 33765381 DOI: 10.1021/acsnano.0c10005] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional heterostructures have been extensively investigated as next-generation nonvolatile memory (NVM) devices. In the past decade, drastic performance improvements and further advanced functionalities have been demonstrated. However, this progress is not sufficiently supported by the understanding of their operations, obscuring the material and device structure design policy. Here, detailed operation mechanisms are elucidated by exploiting the floating gate (FG) voltage measurements. Systematic comparisons of MoTe2, WSe2, and MoS2 channel devices revealed that the tunneling behavior between the channel and FG is controlled by three kinds of current-limiting paths, i.e., tunneling barrier, 2D/metal contact, and p-n junction in the channel. Furthermore, the control experiment indicated that the access region in the device structure is required to achieve 2D channel/FG tunneling by preventing electrode/FG tunneling. The present understanding suggests that the ambipolar 2D-based FG-type NVM device with the access region is suitable for further realizing potentially high electrical reliability.
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Affiliation(s)
- Taro Sasaki
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | | | | | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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19
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Kang WT, Phan TL, Ahn KJ, Lee I, Kim YR, Won UY, Kim JE, Lee YH, Yu WJ. Selective Pattern Growth of Atomically Thin MoSe 2 Films via a Surface-Mediated Liquid-Phase Promoter. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18056-18064. [PMID: 33827208 DOI: 10.1021/acsami.1c04005] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer numerous advantages over silicon-based application in terms of atomically thin geometry, excellent opto-electrical properties, layer-number dependence, band gap variability, and lack of dangling bonds. The production of high-quality and large-scale TMD films is required with consideration of practical technology. However, the performance of scalable devices is affected by problems such as contamination and patterning arising from device processing; this is followed by an etching step, which normally damages the TMD film. Herein, we report the direct growth of MoSe2 films on selective pattern areas via a surface-mediated liquid-phase promoter using a solution-based approach. Our growth process utilizes the promoter on the selective pattern area by enhancing wettability, resulting in a highly uniform MoSe2 film. Moreover, our approach can produce other TMD films such as WSe2 films as well as control various pattern shapes, sizes, and large-scale areas, thus improving their applicability in various devices in the future. Our patterned MoSe2 field-effect transistor device exhibits a p-type dominant conduction behavior with a high on/off current ratio of ∼106. Thus, our study provides general guidance for direct selective pattern growth via a solution-based approach and the future design of integrated devices for a large-scale application.
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Affiliation(s)
- Won Tae Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Jin Ahn
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ilmin Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Rae Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ui Yeon Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ji Eun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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20
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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Jo SB, Kang J, Cho JH. Recent Advances on Multivalued Logic Gates: A Materials Perspective. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004216. [PMID: 33898193 PMCID: PMC8061388 DOI: 10.1002/advs.202004216] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Revised: 12/13/2020] [Indexed: 06/12/2023]
Abstract
The recent advancements in multivalued logic gates represent a rapid paradigm shift in semiconductor technology toward a new era of hyper Moore's law. Particularly, the significant evolution of materials is guiding multivalued logic systems toward a breakthrough gradually, whereby they are transcending the limits of conventional binary logic systems in terms of all the essential figures of merit, i.e., power dissipation, operating speed, circuit complexity, and, of course, the level of the integration. In this review, recent advances in the field of multivalued logic gates based on emerging materials to provide a comprehensive guideline for possible future research directions are reviewed. First, an overview of the design criteria and figures of merit for multivalued logic gates is presented, and then advancements in various emerging nanostructured materials-ranging from 0D quantum dots to multidimensional heterostructures-are summarized and these materials in terms of device design criteria are assessed. The current technological challenges and prospects of multivalued logic devices are also addressed and major research trends are elucidated.
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Affiliation(s)
- Sae Byeok Jo
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722South Korea
| | - Joohoon Kang
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722South Korea
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22
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Abraham N, Murali K, Watanabe K, Taniguchi T, Majumdar K. Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications. ACS NANO 2020; 14:15678-15687. [PMID: 33091295 DOI: 10.1021/acsnano.0c06630] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
van der Waals (vdW) tunnel junctions are attractive because of their atomically sharp interface, gate tunability, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in this class of tunnel diodes often exhibits noisy behavior with low peak current density and lacks robustness and repeatability, limiting their practical circuit applications. Here, we propose a strategy of using a 1L-WS2 as an optimum tunnel barrier sandwiched in a broken gap tunnel junction of highly doped black phosphorus (BP) and SnSe2. We achieve high yield tunnel diodes exhibiting highly repeatable, ultraclean, and gate-tunable NDR characteristics with a signature of intrinsic oscillation, and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K), making them suitable for practical applications. We show that the thermodynamic stability of the vdW tunnel diode circuit can be tuned from astability to bistability by altering the constraint through choosing a voltage or a current bias, respectively. In the astable mode under voltage bias, we demonstrate a compact, voltage-controlled oscillator without the need for an external tank circuit. In the bistable mode under current bias, we demonstrate a highly scalable, single-element, one-bit memory cell that is promising for dense random access memory applications in memory intensive computation architectures.
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Affiliation(s)
- Nithin Abraham
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Krishna Murali
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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23
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Nakamura K, Nagamura N, Ueno K, Taniguchi T, Watanabe K, Nagashio K. All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51598-51606. [PMID: 33146991 DOI: 10.1021/acsami.0c13233] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bond-free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of a hexagonal boron nitride (h-BN) top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top-gate insulator resulted in low SS values at RT.
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Affiliation(s)
- Keigo Nakamura
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Naoka Nagamura
- National Institute for Materials Science, Ibaraki 305-0044, Japan
- PRESTO, Japan Science and Technology Agency (JST), Saitama 332-0012, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | | | - Kenji Watanabe
- National Institute for Materials Science, Ibaraki 305-0044, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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A Non-Volatile Memory Based on NbOx/NbSe2 Van der Waals Heterostructures. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10217598] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) layered transition metal dichalcogenides (TMDs) materials have been receiving a huge interest due to atomically thin thickness, excellent optoelectronic properties, and free dangling bonds. Especially the metallic TMDs, such as MoTe2 (1T’ phase), NbS2, or NbSe2, have shown fascinating physical properties through various applications, such as superconductor and charge density wave. However, carrier transport of metallic TMDs would be degraded due to the poor stability in ambient conditions. To date, achieving both high device performance and long-term stability is still a huge challenge. Thus, an alternative way to develop both unavoidable native oxide and metallic TMDs is under consideration for new era research. In this respect, 2D metallic TMD materials have attracted high attention due to their great potential in neuromorphic-based devices with metal-insulator-metal structures, making it possible to produce scalable, flexible, and transparent memory devices. Herein, we experimentally demonstrated a synthesized metallic NbSe2 by a chemical vapor deposition method with a highly uniform, good shape distribution and layer controller ranging from 2–10 layers. Together, for the first time, we proposed the NbOx/NbSe2 heterostructure memristor device based on the native NbOx oxide on the interface of multi-layer NbSe2 flakes. The ultra-thin native NbOx oxide of 3 nm was formed after a period of oxidation time under air condition, which acts as a memristive surface in the Au-NbOx-Au lateral memristor device, in which oxygen vacancies form a conductive filament. Our NbOx/NbSe2 hetero-tructured memristor exhibits a stable memory window, a low-resistance-state/high-resistance-state ratio of 20, and stable endurance properties over 20 cycles at a low working voltage of 1 V. Furthermore, by the retention property test, non-volatile characteristics were confirmed after over 3000 s in our best data. Through a systematic study of the NbOx/NbSe2 heterostructured memristor device, this report will open new opportunities for next-generation memory devices application.
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Xu C, Li C, Jin Y. Programmable Organic-Free Negative Differential Resistance Memristor Based on Plasmonic Tunnel Junction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2002727. [PMID: 32715596 DOI: 10.1002/smll.202002727] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2020] [Revised: 06/23/2020] [Indexed: 06/11/2023]
Abstract
A novel negative differential resistance (NDR) phenomenon is reported herein based on planar plasmonic tunnel junction, resulting from plasmon-assisted long-range electron tunneling (P-tunneling) and electronic caching effect of Au@SiO2 nanoparticles. The tunnel junction is made of shell-insulated Au@SiO2 nanoparticle nanomembrane, in which SiO2 shells act as a tunable tunneling barrier, while the Au core not only support the plasmonic effect to enable P-tunneling, but also act as electronic caches to render NDR responses. The NDR peak voltage and current can be programmably controlled by varying the thickness of SiO2 shell and the size of Au core to tune barrier level for electron transport. In addition, light induced plasmonic effect can be further managed to regulate the NDR behavior by fine-tuning P-tunneling. The phenomenon is exploited for robust use as memristors. The work provides a new mechanism for the generation of NDR effect and may open a way for the development of robust and new conceptual nanoelectronic devices.
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Affiliation(s)
- Chen Xu
- State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, China
- School of Chemistry and Materials Science, University of Science and Technology of China (USTC), Hefei, Anhui, 230026, China
| | - Chuanping Li
- State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongdong Jin
- State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, China
- School of Chemistry and Materials Science, University of Science and Technology of China (USTC), Hefei, Anhui, 230026, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
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Mahajan M, Majumdar K. Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS 2/2H-MoS 2 T-Junction. ACS NANO 2020; 14:6803-6811. [PMID: 32406676 DOI: 10.1021/acsnano.0c00331] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the long-standing goals for researchers. The emergence of 1T-TaS2, a layered material exhibiting strong charge density wave (CDW)-driven resistivity switching that can be controlled by an external stimulus such as electric field and optical pulses, has triggered a renewed interest in metal-based electronics. Here we demonstrate a negative differential resistor (NDR) using electrically driven CDW phase transition in an asymmetrically designed T-junction made up of 1T-TaS2/2H-MoS2 van der Waals heterojunction. The principle of operation of the proposed device is governed by majority carrier transport and is distinct from usual NDR devices employing tunneling of carriers; thus it avoids the bottleneck of weak tunneling efficiency in van der Waals heterojunctions. Consequently, we achieve a peak current density in excess of 105 nA μm-2, which is about 2 orders of magnitude higher than that obtained in typical layered material based NDR implementations. The peak current density can be effectively tuned by an external gate voltage as well as photogating. The device is robust against ambiance-induced degradation, and the characteristics repeat in multiple measurements over a period of more than a month. The findings are attractive for the implementation of active metal-based functional circuits.
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Affiliation(s)
- Mehak Mahajan
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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Kim KH, Park HY, Shim J, Shin G, Andreev M, Koo J, Yoo G, Jung K, Heo K, Lee Y, Yu HY, Kim KR, Cho JH, Lee S, Park JH. A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory. NANOSCALE HORIZONS 2020; 5:654-662. [PMID: 32226980 DOI: 10.1039/c9nh00631a] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
For increasing the restricted bit-density in the conventional binary logic system, extensive research efforts have been directed toward implementing single devices with a two threshold voltage (VTH) characteristic via the single negative differential resistance (NDR) phenomenon. In particular, recent advances in forming van der Waals (vdW) heterostructures with two-dimensional crystals have opened up new possibilities for realizing such NDR-based tunneling devices. However, it has been challenging to exhibit three VTH through the multiple-NDR (m-NDR) phenomenon in a single device even by using vdW heterostructures. Here, we show the m-NDR device formed on a BP/(ReS2 + HfS2) type-III double-heterostructure. This m-NDR device is then integrated with a vdW transistor to demonstrate a ternary vdW latch circuit capable of storing three logic states. Finally, the ternary latch is extended toward ternary SRAM, and its high-speed write and read operations are theoretically verified.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Hyung-Youl Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jaewoo Shim
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA
| | - Gicheol Shin
- Department of Semiconductor System Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Maksim Andreev
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jiwan Koo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Gwangwe Yoo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Kilsu Jung
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Keun Heo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Yoonmyung Lee
- Department of Semiconductor System Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyun-Yong Yu
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Kyung Rok Kim
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea
| | - Sungjoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
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Fan S, Yun SJ, Yu WJ, Lee YH. Tailoring Quantum Tunneling in a Vanadium-Doped WSe 2/SnSe 2 Heterostructure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902751. [PMID: 32042571 PMCID: PMC7001641 DOI: 10.1002/advs.201902751] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2019] [Revised: 11/04/2019] [Indexed: 05/26/2023]
Abstract
2D van der Waals layered heterostructures allow for a variety of energy band offsets, which help in developing valuable multifunctional devices. However, p-n diodes, which are typical and versatile, are still limited by the material choice due to the fixed band structures. Here, the vanadium dopant concentration is modulated in monolayer WSe2 via chemical vapor deposition to demonstrate tunable multifunctional quantum tunneling diodes by vertically stacking SnSe2 layers at room temperature. This is implemented by substituting tungsten atoms with vanadium atoms in WSe2 to provoke the p-type doping effect in order to efficiently modulate the Fermi level. The precise control of the vanadium doping concentration is the key to achieving the desired quantum tunneling diode behaviors by tuning the proper band alignment for charge transfer across the heterostructure. By constructing a p-n diode for p-type V-doped WSe2 and heavily degenerate n-type SnSe2, the type-II band alignment at low V-doping concentration is clearly shown, which evolves into the type-III broken-gap alignment at heavy V-doping concentration to reveal a variety of diode behaviors such as forward diode, backward diode, negative differential resistance, and ohmic resistance.
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Affiliation(s)
- Sidi Fan
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy Science and Department of PhysicsSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy Science and Department of PhysicsSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy Science and Department of PhysicsSungkyunkwan UniversitySuwon16419Republic of Korea
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