1
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Yoo MS, Byun KE, Lee H, Lee MH, Kwon J, Kim SW, Jeong U, Seol M. Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310282. [PMID: 38190458 DOI: 10.1002/adma.202310282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/07/2023] [Indexed: 01/10/2024]
Abstract
Acquisition of defect-free transition metal dichalcogenides (TMDs) channels with clean heterojunctions is a critical issue in the production of TMD-based functional electronic devices. Conventional approaches have transferred TMD onto a target substrate, and then apply the typical device fabrication processes. Unfortunately, those processes cause physical and chemical defects in the TMD channels. Here, a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC) is proposed. In the proposed synthesis, a uniform TMDlayer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the upper Au layer and the reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, synthesis of various homo- and hetero-structured TMDs, and in situ TMD channel formation in the last stage of device fabrication. The mechanism of TMD growth is revealed by the TM-accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111). We demonstrated a wafer-scale TMD-based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness. CIC proposed in this study represents a breakthrough in in TMD-based electronic device fabrication and marking a substantial step toward practical next-generation integrated electronics.
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Affiliation(s)
- Min Seok Yoo
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Kyung-Eun Byun
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Hyangsook Lee
- Analytical Science Laboratory, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Min-Hyun Lee
- Thin film Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Junyoung Kwon
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Sang Won Kim
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro Nam-Gu, Pohang, 37673, Republic of Korea
| | - Minsu Seol
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
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2
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Hu J, Dong M. Recent advances in two-dimensional nanomaterials for sustainable wearable electronic devices. J Nanobiotechnology 2024; 22:63. [PMID: 38360734 PMCID: PMC10870598 DOI: 10.1186/s12951-023-02274-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 12/14/2023] [Indexed: 02/17/2024] Open
Abstract
The widespread adoption of smart terminals has significantly boosted the market potential for wearable electronic devices. Two-dimensional (2D) nanomaterials show great promise for flexible, wearable electronics of next-generation electronic materials and have potential in energy, optoelectronics, and electronics. First, this review focuses on the importance of functionalization/defects in 2D nanomaterials, a discussion of different kinds of 2D materials for wearable devices, and the overall structure-property relationship of 2D materials. Then, in this comprehensive review, we delve into the burgeoning realm of emerging applications for 2D nanomaterial-based flexible wearable electronics, spanning diverse domains such as energy, medical health, and displays. A meticulous exploration is presented, elucidating the intricate processes involved in tailoring material properties for specific applications. Each research direction is dissected, offering insightful perspectives and dialectical evaluations that illuminate future trajectories and inspire fruitful investigations in this rapidly evolving field.
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Affiliation(s)
- Jing Hu
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
- Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 311215, China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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3
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Kim H, Zhao HL, van der Zande AM. Stretchable Thin-Film Transistors Based on Wrinkled Graphene and MoS 2 Heterostructures. NANO LETTERS 2024; 24:1454-1461. [PMID: 38214495 DOI: 10.1021/acs.nanolett.3c05091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Two-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel and characterized them with Raman spectroscopy and transport measurements. The 2D S-TFTs had initial mobility of 4.9 ± 0.7 cm2/(V s). The wrinkling reduced the strain transferred into the 2D materials by a factor of 50, allowing a substrate stretch of up to 23% that could be cycled thousands of times without electrical degradation. The stretch did not alter the mobility but did lead to strain-induced threshold voltage shifts by ΔVT = -1.9 V. These 2D S-TFTs form the foundation for stretchable integrated circuits and enable investigations of the impact of heterogeneous strain on electron transport.
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Affiliation(s)
- Hyunchul Kim
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - He Lin Zhao
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Lab, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nano Technology Lab, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
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4
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Xia H, Sang X, Shu Z, Shi Z, Li Z, Guo S, An X, Gao C, Liu F, Duan H, Liu Z, He Y. The practice of reaction window in an electrocatalytic on-chip microcell. Nat Commun 2023; 14:6838. [PMID: 37891203 PMCID: PMC10611802 DOI: 10.1038/s41467-023-42645-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Accepted: 10/17/2023] [Indexed: 10/29/2023] Open
Abstract
To enhance the efficiency of catalysis, it is crucial to comprehend the behavior of individual nanowires/nanosheets. A developed on-chip microcell facilitates this study by creating a reaction window that exposes the catalyst region of interest. However, this technology's potential application is limited due to frequently-observed variations in data between different cells. In this study, we identify a conductance problem in the reaction windows of non-metallic catalysts as the cause of this issue. We investigate this problem using in-situ electronic/electrochemical measurements and atom-thin nanosheets as model catalysts. Our findings show that a full-open window, which exposes the entire catalyst channel, allows for efficient modulation of conductance, which is ten times higher than a half-open window. This often-overlooked factor has the potential to significantly improve the conductivity of non-metallic catalysts during the reaction process. After examining tens of cells, we develop a vertical microcell strategy to eliminate the conductance issue and enhance measurement reproducibility. Our study offers guidelines for conducting reliable microcell measurements on non-metallic single nanowire/nanosheet catalysts.
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Affiliation(s)
- Hang Xia
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiaoru Sang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Zhiwen Shu
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha, 410082, P. R. China
| | - Zude Shi
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Shasha Guo
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xiuyun An
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Caitian Gao
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.
- Greater Bay Area Institute for Innovation, Hunan University, Guangzhou, 511300, P. R. China.
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Huigao Duan
- College of Mechanical and Vehicle Engineering, National Engineering Research Centre for High Efficiency Grinding, Hunan University, Changsha, 410082, P. R. China
- Greater Bay Area Institute for Innovation, Hunan University, Guangzhou, 511300, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
- Greater Bay Area Institute for Innovation, Hunan University, Guangzhou, 511300, P. R. China.
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5
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Yuan H, Xu R, Ren J, Yang J, Wang S, Tian D, Fu Y, Li Q, Peng X, Wang X. Anisotropic charge transfer and gate tuning for p-SnS/n-MoS 2 vertical van der Waals diodes. NANOSCALE 2023; 15:15344-15351. [PMID: 37698246 DOI: 10.1039/d3nr03508e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS2, and a high rectification ratio of 3.1 × 104 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect.
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Affiliation(s)
- Hui Yuan
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Ruihan Xu
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Jiale Ren
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Jielin Yang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Shouyang Wang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Dongwen Tian
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Yingshuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Quan Li
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China.
| | - Xiaoniu Peng
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Xina Wang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
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6
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Chen Y, Lu D, Kong L, Tao Q, Ma L, Liu L, Lu Z, Li Z, Wu R, Duan X, Liao L, Liu Y. Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate. ACS NANO 2023; 17:14954-14962. [PMID: 37459447 DOI: 10.1021/acsnano.3c03626] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/09/2023]
Abstract
Strain engineering has been proposed as a promising method to boost the carrier mobility of two-dimensional (2D) semiconductors. However, state-of-the-art straining approaches are largely based on putting 2D semiconductors on flexible substrates or rough substrate with nanostructures (e.g., nanoparticles, nanorods, ripples), where the observed mobility change is not only dependent on channel strain but could be impacted by the change of dielectric environment as well as rough interface scattering. Therefore, it remains an open question whether the pure lattice strain could improve the carrier mobilities of 2D semiconductors, limiting the achievement of high-performance 2D transistors. Here, we report a strain engineering approach to fabricate highly strained MoS2 transistors on a flat substrate. By mechanically laminating a prefabricated MoS2 transistor onto a custom-designed trench structure on flat substrate, well-controlled strain can be uniformly generated across the 2D channel. In the meantime, the substrate and the back-gate dielectric layer remain flat without any roughness-induced scattering effect or variation of the dielectric environment. Based on this technique, we demonstrate the MoS2 electron mobility could be enhanced by tension strain and decreased by compression strain, consistent with theoretical predictions. The highest mobility enhancement is 152% for monolayer MoS2 and 64% for bilayer MoS2 transistors, comparable to that of a silicon device. Our method not only provides a compatible approach to uniformly strain the layered semiconductors on flat and solid substrate but also demonstrates an effective method to boost the carrier mobilities of 2D transistors.
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Affiliation(s)
- Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ruixia Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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7
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Zhu Y, Zhao W, Jing B, Zhou J, Cai B, Li D, Ao Z. Density functional theory calculations on 2H-MoS2 monolayer for HCHO degradation: Piezoelectric-photocatalytic synergy. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.107816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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8
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Zhang R, Lai Y, Chen W, Teng C, Sun Y, Yang L, Wang J, Liu B, Cheng HM. Carrier Trapping in Wrinkled 2D Monolayer MoS 2 for Ultrathin Memory. ACS NANO 2022; 16:6309-6316. [PMID: 35324162 DOI: 10.1021/acsnano.2c00350] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.
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Affiliation(s)
- Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yujie Sun
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Liusi Yang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Faculty of Materials and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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9
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 51] [Impact Index Per Article: 25.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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10
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Xu M, Gao J, Song J, Wang H, Zheng L, Wei Y, He Y, Wang X, Huang W. Programmable patterned MoS 2 film by direct laser writing for health-related signals monitoring. iScience 2021; 24:103313. [PMID: 34755102 PMCID: PMC8564106 DOI: 10.1016/j.isci.2021.103313] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2021] [Revised: 09/30/2021] [Accepted: 10/15/2021] [Indexed: 12/02/2022] Open
Abstract
The two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising flexible electronic materials for strategic flexible information devices. Large-area and high-quality patterned materials were usually required by flexible electronics due to the limitation from the process of manufacturing and integration. However, the synthesis of large-area patterned 2D TMDs with high quality is difficult. Here, an efficient and powerful pulsed laser has been developed to synthesize wafer-scale MoS2. The flexible strain sensor was fabricated using MoS2 and showed high performance of low detection limit (0.09%), high gauge factor (1,118), and high stability (1,000 cycles). Besides, we demonstrated its applications in real-time monitoring of health-related physiological signals such as radial artery pressure, respiratory rate, and vocal cord vibration. Our findings suggest that the laser-assisted method is effective and capable of synthesizing wafer-scale 2D TMDs, which opens new opportunities for the next flexible electronic devices and wearable health monitoring. Wafer-scale patterned MoS2 film has been synthesized by pulsed laser The MoS2 film strain sensor shows low limit detection, high GF, and stability The healthy-related singles have been monitored by the MoS2 film strain sensor
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Affiliation(s)
- Manzhang Xu
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Jiuwei Gao
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China
| | - Juncai Song
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China
| | - Hanxin Wang
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Yuan Wei
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, P. R. China.,Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211800, P. R. China
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11
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Nguyen T, Dinh T, Phan HP, Pham TA, Dau VT, Nguyen NT, Dao DV. Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications. MATERIALS HORIZONS 2021; 8:2123-2150. [PMID: 34846421 DOI: 10.1039/d1mh00538c] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The piezoresistive effect has been a dominant mechanical sensing principle that has been widely employed in a range of sensing applications. This transducing concept still receives great attention because of the huge demand for developing small, low-cost, and high-performance sensing devices. Many researchers have extensively explored new methods to enhance the piezoresistive effect and to make sensors more and more sensitive. Many interesting phenomena and mechanisms to enhance the sensitivity have been discovered. Numerous review papers on the piezoresistive effect have been published; however, there is no comprehensive review article that thoroughly analyses methods and approaches to enhance the piezoresistive effect. This paper comprehensively reviews and presents all the advanced enhancement methods ranging from the quantum physical effect and new materials to nanoscopic and macroscopic structures, and from conventional rigid to flexible, stretchable and wearable applications. In addition, the paper summarises results recently achieved on applying the above-mentioned innovative sensing enhancement techniques in making extremely sensitive piezoresistive transducers.
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Affiliation(s)
- Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Australia.
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12
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Nguyen C, Hoang NV, Phuc HV, Sin AY, Nguyen CV. Two-Dimensional Boron Phosphide/MoGe 2N 4 van der Waals Heterostructure: A Promising Tunable Optoelectronic Material. J Phys Chem Lett 2021; 12:5076-5084. [PMID: 34028284 DOI: 10.1021/acs.jpclett.1c01284] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A van der Waals (VDW) heterostructure offers an effective strategy to create designer physical properties in vertically stacked two-dimensional (2D) materials, and offers a new paradigm in designing novel 2D heterostructure devices. In this work, we investigate the structural and electronic features of the BP/MoGe2N4 heterostructure. We show that the BP/MoGe2N4 heterostructure exists in a multiple structurally stable stacking configuration, thus revealing the experimental feasibility of fabricating such heterostructures. Electronically, the BP/MoGe2N4 heterostructure is a direct band gap semiconductor exhibiting type-II band alignment, which is highly beneficial for the spatial separation of electrons and holes. Upon forming the BP/MoGe2N4 heterostructure, the band gap of the constituent BP and MoGe2N4 monolayers are substantially reduced, thus allowing the easier creation of an electron-hole pair at a lower excitation energy. Interestingly, both the band gap and band alignment of the BP/MoGe2N4 heterostructure can be modulated by an external electric field and a vertical strain. The optical absorption of the BP/MoGe2N4 heterostructure is enhanced in both the visible-light and ultraviolet regions, thus suggesting a strong potential for solar cell application. Our findings reveal the promising potential of the BP/MoGe2N4 vdW heterostructure in high-performance optoelectronic device applications.
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Affiliation(s)
- Cuong Nguyen
- Department of Physics, University of Education, Hue University, Hue, Vietnam
| | - Nguyen V Hoang
- Department of Materials Science and Engineering, Le Quy Don Technical University, Ha Noi 100000, Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam
| | - Ang Yee Sin
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University, Ha Noi 100000, Vietnam
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13
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Li L, Shang Y, Lv S, Li Y, Fang Y, Li H. Flexible and highly responsive photodetectors based on heterostructures of MoS 2and all-carbon transistors. NANOTECHNOLOGY 2021; 32:315209. [PMID: 33831847 DOI: 10.1088/1361-6528/abf5ff] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2021] [Accepted: 04/08/2021] [Indexed: 06/12/2023]
Abstract
Heterostructures of graphene and transition-metal dichalcogenides (TMDCs) are promising candidates for high-performance flexible photodetectors because of their high photoresponsivity and detectivity. However, the mechanical stability of current flexible photodetectors is limited, due to a mechanical mismatch between their two-dimensional channel materials and metallic contacts. Herein, we develop a type of mechanically stable, highly responsive, and flexible photodetector by integrating MoS2and all-carbon transistors. By combining the high mobility of graphene with the strong light-matter interactions of MoS2, our heterostructure photodetector exhibits a greatly improved photoresponse performance, compared with individual graphene or MoS2photodetectors. In addition, the mechanical properties of the all-carbon electrodes are a good match for those of the active two-dimensional channels, resulting in greatly improved electrical stability of the heterostructure photodetector under mechanical deformation. These capabilities make our heterostructure photodetector a promising candidate for flexible photodetection and photoimaging applications.
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Affiliation(s)
- Li Li
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuanyuan Shang
- School of Physical Engineering, Zhengzhou University, Henan 450052, People's Republic of China
| | - Suye Lv
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yunxing Li
- School of Physical Engineering, Zhengzhou University, Henan 450052, People's Republic of China
| | - Ying Fang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Center for Excellence in Brain Science and Intelligence Technology, 320 Yue Yang Road, Shanghai 200031, People's Republic of China
| | - Hongbian Li
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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14
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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15
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She Y, Wu Z, You S, Du Q, Chu X, Niu L, Ding C, Zhang K, Zhang L, Huang S. Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS 2/Bi 2Se 3 Heterojunctions Based on Vapor Growth. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15518-15524. [PMID: 33769777 DOI: 10.1021/acsami.1c00377] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS2/Bi2Se3 vertical heterojunctions were successfully modulated. High-quality WS2/Bi2Se3 vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS2/Bi2Se3 vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.
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Affiliation(s)
- Yihong She
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Zhen Wu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Shengdong You
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Quan Du
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Xiaohong Chu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Lijuan Niu
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Changchun Ding
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Kenan Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Shaoming Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
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16
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Pham KD, Nguyen CQ, Nguyen CV, Cuong PV, Hieu NV. Two-dimensional van der Waals graphene/transition metal nitride heterostructures as promising high-performance nanodevices. NEW J CHEM 2021. [DOI: 10.1039/d1nj00374g] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Graphene-based van der Waals (vdW) heterostructures have attracted much attention because they can enhance the properties of separated materials, possess numerous new phenomena and unusual properties and improve the performance of devices.
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Affiliation(s)
- Khang D. Pham
- Laboratory of Applied Physics
- Advanced Institute of Materials Science
- Ton Duc Thang University
- Ho Chi Minh City
- Vietnam
| | - Cuong Q. Nguyen
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
- Faculty of Natural Sciences, Duy Tan University
| | - C. V. Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University
- Ha Noi 100000
- Vietnam
| | - Pham V. Cuong
- Faculty of Electrical Engineering Technology, Hanoi University of Industry
- Hanoi 100000
- Vietnam
| | - Nguyen V. Hieu
- Faculty of Physics, The University of Danang, University of Science and Education
- Da Nang
- Vietnam
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17
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Zhu M, Du X, Liu S, Li J, Wang Z, Ono T. A review of strain sensors based on two-dimensional molybdenum disulfide. JOURNAL OF MATERIALS CHEMISTRY C 2021. [DOI: 10.1039/d1tc02102h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
This review covers a short introduction to the structure, properties, and synthesis methods of MoS2. Emphasis is given to the different categories of strain sensing mechanisms and device architectures, which enable a high gauge factor (GF).
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Affiliation(s)
- Minjie Zhu
- Sensor and Network Control Center
- Instrumentation Technology and Economy Institute
- Beijing 100055
- China
| | - Xiaohui Du
- Sensor and Network Control Center
- Instrumentation Technology and Economy Institute
- Beijing 100055
- China
| | - Shuai Liu
- Sensor and Network Control Center
- Instrumentation Technology and Economy Institute
- Beijing 100055
- China
| | - Jinhua Li
- School of Mechanical Engineering
- Sichuan University
- Chengdu
- China
| | - Zhuqing Wang
- School of Mechanical Engineering
- Sichuan University
- Chengdu
- China
- Med+X Center for Manufacturing, West China Hospital, Sichuan University, Chengdu
| | - Takahito Ono
- Graduate School of Engineering, Tohoku University, Sendai
- Miyagi 980-8579
- Japan
- Micro System Integration Center, Tohoku University, Sendai
- Miyagi 980-0845
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18
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Nazir G, Rehman A, Park SJ. Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities. ACS APPLIED MATERIALS & INTERFACES 2020; 12:47127-47163. [PMID: 32914955 DOI: 10.1021/acsami.0c10213] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal-oxide-semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
| | - Adeela Rehman
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
| | - Soo-Jin Park
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
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Lee I, Kang WT, Kim JE, Kim YR, Won UY, Lee YH, Yu WJ. Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS 2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor. ACS NANO 2020; 14:7574-7580. [PMID: 32401483 DOI: 10.1021/acsnano.0c03425] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) layered materials with properties such as a large surface-to-volume ratio, strong light interaction, and transparency are expected to be used in future optoelectronic applications. Many studies have focused on ways to increase absorption of 2D-layered materials for use in photodetectors. In this work, we demonstrate another strategy for improving photodetector performance using a graphene/MoS2 heterojunction phototransistor with a short channel length and a tunable Schottky barrier. The channel length of sub-30 nm, shorter than the diffusion length, decreases carrier recombination and carrier transit time in the channel and improves phototransistor performance. Furthermore, our graphene/MoS2 heterojunction phototransistor employed a tunable Schottky barrier that is only controlled by light and gate bias. It maintains a low dark current and an increased photocurrent. As a result, our graphene/MoS2 heterojunction phototransistor showed ultrahigh responsivity and detectivity of 2.2 × 105 A/W and 3.5 × 1013 Jones, respectively. This is a considerable improvement compared to previous pristine MoS2 phototransistors. We confirmed an effective method to develop phototransistors based on 2D materials and obtained ultrahigh performance of our phototransistor, which is promising for high-performance optoelectronic applications.
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Affiliation(s)
- Ilmin Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Tae Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Ji Eun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Rae Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Ui Yeon Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Lee I, Kim JN, Kang WT, Shin YS, Lee BH, Yu WJ. Schottky Barrier Variable Graphene/Multilayer-MoS 2 Heterojunction Transistor Used to Overcome Short Channel Effects. ACS APPLIED MATERIALS & INTERFACES 2020; 12:2854-2861. [PMID: 31855598 DOI: 10.1021/acsami.9b18577] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
A single-layer MoS2 achieves excellent gate controllability within the nanoscale channel length of a field-effect transistor (FET) owing to an ultra-short screening length. However, multilayer MoS2 (ML-MoS2) is more vulnerable to short channel effects (SCEs) owing to its thickness and long screening length. We eliminated the SCEs in an ML-MoS2 FET (thickness of 4-13 nm) at a channel length of sub-30 nm using a Schottky barrier (SB) variable graphene/ML-MoS2 heterojunction. Although the band modulation in the ML-MoS2 channel worsens with a decrease in the channel length, which is similar to the SCEs occurring in conventional FETs, the variable Fermi level (EF) of a graphene electrode along the gate voltage allows control of the SB at the graphene/MoS2 junction and backs up the current modulation through a variable SB. Electrical measurements and a theoretical band simulation demonstrate the efficient SB modulation of our graphene nanogap (GrNG) ML-MoS2 FET with three distinct carrier transports along Vgs: a thermionic emission at a low SB, Fowler-Nordheim tunneling at a moderate SB, and direct tunneling at a high SB. Our GrNG FET shows an extremely high on-off current ratio of ∼108, which is approximately three-orders of magnitude better than a previously reported metal nanogap (MeNG) FET and a self-aligned metal/graphene nanogap FET with a similar MoS2 thickness. Our GrNG FET also exhibits a 100,000-times higher on-off ratio, 100-times lower subthreshold swing, and 10-times lower drain induced barrier.
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Affiliation(s)
- Ilmin Lee
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Joo Nam Kim
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Won Tae Kang
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Yong Seon Shin
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Boo Hueng Lee
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
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Zhang WX, Yin Y, He C. Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain. Phys Chem Chem Phys 2020; 22:26231-26240. [DOI: 10.1039/d0cp04474a] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.
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Affiliation(s)
- W. X. Zhang
- School of Materials Science and Engineering
- Chang’an University
- Xi’an 710064
- China
| | - Y. Yin
- School of Materials Science and Engineering
- Chang’an University
- Xi’an 710064
- China
| | - C. He
- State Key Laboratory for Mechanical Behavior of Materials
- School of Materials Science and Engineering
- Xi’an Jiaotong University
- Xi’an
- China
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Chen F, Yao Y, Su W, Ding S, Fu L. Optical performance and growth mechanism of a 2D WS2–MoWS2 hybrid heterostructure fabricated by a one-step CVD strategy. CrystEngComm 2020. [DOI: 10.1039/c9ce01652j] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A large-scale 2D WS2-Mo1−xWxS2 hybrid heterostructure can be realized by the reaction of S powder and sputtered Mo/W films through the chemical vapor deposition method.
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Affiliation(s)
- Fei Chen
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Yi Yao
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Weitao Su
- School of Sciences
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Su Ding
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Li Fu
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
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