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Wu T, Gao S, Li Y. IGZO/WO 3-x -Heterostructured Artificial Optoelectronic Synaptic Devices Mimicking Image Segmentation and Motion Capture. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2309857. [PMID: 38258604 DOI: 10.1002/smll.202309857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 01/11/2024] [Indexed: 01/24/2024]
Abstract
Currently, artificial neural networks (ANNs) based on memristors are limited to recognizing static images of objects when simulating human visual system, preventing them from performing high-dimensional information perception, and achieving more complex biomimetic functions is subject to certain limitations. In this work, indium gallium zinc oxide (IGZO)/tungsten oxide (WO3-x )-heterostructured artificial optoelectronic synaptic devices mimicking image segmentation and motion capture exhibiting high-performance optoelectronic synaptic responses are proposed and demonstrated. Upon electrical and optical stimulations, the device shows a variety of fundamental and advanced electrical and optical synaptic plasticity. Most importantly, outstanding and repeatable linear synaptic weight changes are attained by the developed memristor. By taking advantage of the notable linear synaptic weight changes, ANNs have been constructed and successfully utilized to demonstrate two applications in the field of computer vision, including image segmentation and object tracking. The accuracy attained by the memristor-based ANNs is similar to that of the computer algorithms, while its power has been significantly reduced by 105 orders of magnitude. With successful emulations of the human brain reactions when observing objects, the demonstrated memristor and related ANNs can be effectively utilized in constructing artificial optoelectronic synaptic devices and show promising potential in emulating human visual perception.
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Affiliation(s)
- Tong Wu
- Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan, 250022, China
| | - Song Gao
- Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan, 250022, China
| | - Yang Li
- Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan, 250022, China
- School of Microelectronics, Shandong University, Jinan, 250101, China
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Chae M, Lee D, Kim HD. Low-Power Consumption IGZO Memristor-Based Gas Sensor Embedded in an Internet of Things Monitoring System for Isopropanol Alcohol Gas. MICROMACHINES 2023; 15:77. [PMID: 38258196 PMCID: PMC10821175 DOI: 10.3390/mi15010077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 12/27/2023] [Accepted: 12/28/2023] [Indexed: 01/24/2024]
Abstract
Low-power-consumption gas sensors are crucial for diverse applications, including environmental monitoring and portable Internet of Things (IoT) systems. However, the desorption and adsorption characteristics of conventional metal oxide-based gas sensors require supplementary equipment, such as heaters, which is not optimal for low-power IoT monitoring systems. Memristor-based sensors (gasistors) have been investigated as innovative gas sensors owing to their advantages, including high response, low power consumption, and room-temperature (RT) operation. Based on IGZO, the proposed isopropanol alcohol (IPA) gas sensor demonstrates a detection speed of 105 s and a high response of 55.15 for 50 ppm of IPA gas at RT. Moreover, rapid recovery to the initial state was achievable in 50 μs using pulsed voltage and without gas purging. Finally, a low-power circuit module was integrated for wireless signal transmission and processing to ensure IoT compatibility. The stability of sensing results from gasistors based on IGZO has been demonstrated, even when integrated into IoT systems. This enables energy-efficient gas analysis and real-time monitoring at ~0.34 mW, supporting recovery via pulse bias. This research offers practical insights into IoT gas detection, presenting a wireless sensing system for sensitive, low-powered sensors.
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Affiliation(s)
- Myoungsu Chae
- Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Doowon Lee
- Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
- IHP GmbH—Leibniz Institute for Innovative Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Hee-Dong Kim
- Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
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Hu H, Zhang C, Ding Y, Chen F, Huang Q, Zheng Z. A Review of Structure Engineering of Strain-Tolerant Architectures for Stretchable Electronics. SMALL METHODS 2023; 7:e2300671. [PMID: 37661591 DOI: 10.1002/smtd.202300671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 08/01/2023] [Indexed: 09/05/2023]
Abstract
Stretchable electronics possess significant advantages over their conventional rigid counterparts and boost game-changing applications such as bioelectronics, flexible displays, wearable health monitors, etc. It is, nevertheless, a formidable task to impart stretchability to brittle electronic materials such as silicon. This review provides a concise but critical discussion of the prevailing structural engineering strategies for achieving strain-tolerant electronic devices. Not only the more commonly discussed lateral designs of structures such as island-bridge, wavy structures, fractals, and kirigami, but also the less discussed vertical architectures such as strain isolation and elastoplastic principle are reviewed. Future opportunities are envisaged at the end of the paper.
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Affiliation(s)
- Hong Hu
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Chi Zhang
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Yichun Ding
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Fan Chen
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Qiyao Huang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Zijian Zheng
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
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Lee D, Chae M, Jung J, Kim HD. Correlation between Sensing Accuracy and Read Margin of a Memristor-Based NO Gas Sensor Array Estimated by Neural Network Analysis. ACS Sens 2023; 8:2105-2114. [PMID: 37161287 DOI: 10.1021/acssensors.3c00541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Memristor-based gas sensors (gasistors) have been considered as the most promising candidate for detecting NO gas suitable for neural network (NN) analysis. In this work, in order to solve an overfitting issue arising from the training data when using a single gasistor, which degrades the accuracy of NN, we here propose a metal-insulator-silicon (MIS)-structured Zr3N4-based gasistor array that results in an improvement in both the accuracy of the NN analysis and the efficiency of the operating power. As a result, the proposed gasistor array showed a decrease of epoch and a 2.5% improvement of prediction accuracy at room temperature compared to single cells with metal/insulator/metal (MIM) and MIS structures. These results imply that an array structure based on MIS can efficiently solve the overfitting issue by receiving multiple responses at once, compared to a single gas sensor that obtains one response per sensing.
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Affiliation(s)
- Doowon Lee
- Department of Electrical Engineering, Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
| | - Myoungsu Chae
- Department of Electrical Engineering, Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
| | - Jinsu Jung
- Department of Electrical Engineering, Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
| | - Hee-Dong Kim
- Department of Electrical Engineering, Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
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Jiang K, Chen T, Sun J, Quan H, Zhou T. Pd/Pt-Bimetallic-Nanoparticle-Doped In 2O 3 Hollow Microspheres for Rapid and Sensitive H 2S Sensing at Low Temperature. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:668. [PMID: 36839036 PMCID: PMC9963627 DOI: 10.3390/nano13040668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2023] [Revised: 01/31/2023] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
H2S is a poisonous gas that is widespread in nature and human activities. Its rapid and sensitive detection is essential to prevent it from damaging health. Herein, we report Pd- and Pt-bimetallic-nanoparticle-doped In2O3 hollow microspheres that are synthesized using solvothermal and in situ reduction methods for H2S detection. The structure of as-synthesized 1 at% Pd/Pt-In2O3 comprises porous hollow microspheres assembled from In2O3 nanosheets with Pd and Pt bimetallic nanoparticles loaded on its surface. The response of 1 at% Pd/Pt-In2O3 to 5 ppm H2S is 140 (70 times that of pure In2O3), and the response time is 3 s at a low temperature of 50 °C. In addition, it can detect trace H2S (as low as 50 ppb) and has superior selectivity and an excellent anti-interference ability. These outstanding gas-sensing performances of 1 at% Pd/Pt-In2O3 are attributed to the chemical sensitization of Pt, the electronic sensitization of Pd, and the synergistic effect between them. This work supplements the research of In2O3-based H2S sensors and proves that Pd- and Pt-bimetallic-doped In2O3 can be applied in the detection of H2S.
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Affiliation(s)
- Kaisheng Jiang
- State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100194, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tingting Chen
- State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100194, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianhai Sun
- State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100194, China
| | - Hao Quan
- State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100194, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianye Zhou
- State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100194, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Madvar HR, Kordrostami Z, Mirzaei A. Sensitivity Enhancement of Resistive Ethanol Gas Sensor by Optimized Sputtered-Assisted CuO Decoration of ZnO Nanorods. SENSORS (BASEL, SWITZERLAND) 2022; 23:s23010365. [PMID: 36616965 PMCID: PMC9823437 DOI: 10.3390/s23010365] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 12/23/2022] [Accepted: 12/26/2022] [Indexed: 05/20/2023]
Abstract
In this study, sputtered-assisted CuO-decorated ZnO nanorod (NR) gas sensors were fabricated for ethanol gas sensing studies. CuO nanoparticles have been successfully formed on ZnO nanorods by means of a physical process as the decorative metallic element. The amount of decoration affecting the sensor's performance has been optimized. Cu layers with different thicknesses of 5, 10, and 20 nm were deposited on hydrothermally grown ZnO NRs using the sputtering technique. Upon subsequent annealing, Cu was oxidized to CuO. The gas sensing studies revealed that the sensor with an initial Cu layer of 5 nm had the highest response to ethanol at 350 °C. The sensor also showed good selectivity, repeatability, and long-term stability. The enhanced ethanol sensing response of the optimized gas sensor is related to the formation of p-n heterojunction between p-type CuO and n-type ZnO and the presence of the optimal amount of CuO on the surface of ZnO NRs. The results presented in this study highlight the need for optimizing the amount of Cu deposition on the surface of ZnO NRs in order to achieve the highest response to ethanol gas.
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Affiliation(s)
- Hadi Riyahi Madvar
- Department of Electrical and Electronic Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
- Research Center for Design and Fabrication of Advanced Electronic Devices, Shiraz University of Technology, Shiraz 71557-13876, Iran
| | - Zoheir Kordrostami
- Department of Electrical and Electronic Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
- Research Center for Design and Fabrication of Advanced Electronic Devices, Shiraz University of Technology, Shiraz 71557-13876, Iran
- Correspondence:
| | - Ali Mirzaei
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran
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