Lead sulfide nanocrystal quantum dot solar cells with trenched ZnO fabricated via nanoimprinting

Optically Resonant Bulk Heterojunction PbS Quantum Dot Solar Cell

We design an optically resonant bulk heterojunction solar cell to study optoelectronic properties of nanostructured p-n junctions. The nanostructures yield strong light-matter interaction as well as distinct charge-carrier extraction behavior, which together improve the overall power conversion efficiency. We demonstrate high-resolution substrate conformal soft-imprint lithography technology in combination with state-of-the art ZnO nanoparticles to create a nanohole template in an electron transport layer. The nanoholes are infiltrated with PbS quantum dots (QDs) to form a nanopatterned depleted heterojunction. Optical simulations show that the absorption per unit volume in the cylindrical QD absorber layer is enhanced by 19.5% compared to a planar reference. This is achieved for a square array of QD nanopillars of 330 nm height and 320 nm diameter, with a pitch of 500 nm on top of a residual QD layer of 70 nm, surrounded by ZnO. Electronic simulations show that the patterning results in a current gain of 3.2 mA/cm² and a slight gain in voltage, yielding an efficiency gain of 0.4%. Our simulations further show that the fill factor is highly sensitive to the patterned structure. This is explained by the electric field strength varying strongly across the patterned absorber. We outline a path toward further optimized optically resonant nanopattern geometries with enhanced carrier collection properties. We demonstrate a 0.74 mA/cm² current gain for a patterned cell compared to a planar cell in experiments, owing to a much improved infrared response, as predicted by our simulations.

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Colloidal quantum dot (QD), a solution-processable nanoscale optoelectronic building block with well-controlled light absorption and emission properties, has emerged as a promising material system capable of interacting with various photonic structures. Integrated QD/photonic structures have been successfully realized in many optical and optoelectronic devices, enabling enhanced performance and/or new functionalities. In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD-based devices is discussed. A brief overview of QD-based passive devices for on-chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure-integrated optoelectronic systems.

Evolution of optical properties and electronic structures: band gaps and critical points in MgxZn1-xO (0 ≤ x ≤ 0.2) thin films

MgxZn1-xO (ZMO) thin films with tunable Mg content were deposited by atomic layer deposition (ALD) on silicon substrates at 190 °C. The elemental and structural properties were acquired by X-ray photoelectron spectroscopy, transmission electron microscopy, atomic force microscopy and X-ray diffraction. Spectroscopic ellipsometry measurements were performed to reveal the evolution of the dielectric functions and critical points in the ZMO thin films by point-by-point fit in the photon energy range of 1.2-6.0 eV. The dependence of the dielectric functions on doping content is clearly demonstrated and physically explained. The critical point energies and the types of interband optical transitions were extracted from standard lineshape analysis of the second derivatives of the dielectric functions. The critical point features were discussed in terms of band structure modification and structural homogeneity arisen by introducing the Mg dopant into the films. Controlling these transitions by changing the doping content will be of practical significance in emerging ZMO-based thin-film photonic and optoelectronic devices.

High-Efficiency Double Absorber PbS/CdS Heterojunction Solar Cells by Enhanced Charge Collection Using a ZnO Nanorod Array

The device architecture of solar cells remains critical in achieving high photoconversion efficiency while affordable and scalable routes are being explored. Here, we demonstrate a scalable, low cost, and less toxic synthesis route for the fabrication of PbS/CdS thin-film solar cells with efficiencies as high as ∼5.59%, which is the highest efficiency obtained so far for the PbS-based solar cells not involving quantum dots. The devices use a stack of two band-aligned junctions that facilitates absorption of a wider range of the solar spectrum and an architectural modification of the electron-accepting electrode assembly consisting of a very thin CdS layer (∼10 nm) supported by vertically aligned ZnO nanorods on a ∼50 nm thick ZnO underlayer. Compared to a planar electrode of a 50 nm thick CdS film, the modified electrode assembly enhanced the efficiency by ∼39% primarily due to a significantly higher photon absorption in the PbS layer, as revealed by a detailed three-dimensional finite difference time-domain optoelectronic modeling of the device.

Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film

Complementary metal oxide semiconductor (CMOS) image sensors (CIS) are being widely used in digital video cameras, web cameras, digital single lens reflex camera (DSLR), smart phones and so on, owing to their high level of integration, random accessibility, and low-power operation. It needs to be installed with the cover glass in practical applications to protect the sensor from damage, mechanical issues, and environmental conditions, which, however, limits the accuracy and usability of the sensor due to the reflection in the optical path from air-to-cover glass-to-air. In this work, the flexible 3D nanocone anti-reflection (AR) film with controlled aspect ratio was firstly employed to reduce the light reflection at air/cover glass/air interfaces by directly attaching onto the front and rear sides of the CIS cover glass. As both the front and rear sides of cover glass were coated by the AR film, the output image quality was found to be improved with external quantum efficiency increased by 7%, compared with that without AR film. The mean digital data value, root-mean-square contrast, and dynamic range are increased by 45.14%, 38.61% and 57, respectively, for the output image with AR films. These results provide a novel and facile pathway to improve the CIS performance and also could be extended to rational design of other image sensors and optoelectronic devices.

Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells

Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

Polystyrene templated porous titania wells for quantum dot heterojunction solar cells

Polystyrene spheres are used to template TiO2 with a single layer of 300 nm wells which are infilled with PbS quantum dots to form a heterojunction solar cell. The porous well device has an efficiency of 5.7% while the simple planar junction is limited to 3.2%. Using a combination of optical absorption and photocurrent transient decay measurement we determined that the performance enhancement comes from a combination of enhanced optical absorption and increased carrier lifetime.