Photocurrent response of MoS₂ field-effect transistor by deep ultraviolet light in atmospheric and N₂ gas environments

Photogating induced high sensitivity and speed from heterostructure of few-layer MoS2 and reduced graphene oxide-based photodetector

Over the past few years, two-dimensional transition metal dichalcogenides (2D-TMDC) have attracted huge attention due to their high mobility, high absorbance, and high performance in generating excitons (electron and hole pairs). Especially, 2D molybdenum disulfide (MoS2) has been extensively used in optoelectronic and photovoltaic applications. Due to the low photo-to-dark current ratio (Iphoto/dark) and low speed, pristine MoS2-based devices are unsuitable for these applications. So, they need some improvements, i.e., by adding layers or decorating with materials of complementary majority charges. In this work, we decorated pristine MoS2 with reduced graphene oxide (rGO) and got improved dark current, Iphoto/dark, and response time. When we compared the performance of pristine MoS2 based device and rGO decorated MoS2 based device, the rGO/MoS2-based device showed an improved performance of responsivity of 3.36 A W-1, along with an Iphoto/dark of about 154. The heterojunction device exhibited a detectivity of 4.75 × 1012 Jones, along with a very low response time of 0.184 ms. The stability is also outstanding having the same device performance even after six months.

Dual-gate MoS2phototransistor with atomic-layer-deposited HfO2as top-gate dielectric for ultrahigh photoresponsivity

An asymmetric dual-gate (DG) MoS₂field-effect transistor (FET) with ultrahigh electrical performance and optical responsivity using atomic-layer-deposited HfO₂as a top-gate (TG) dielectric was fabricated and investigated. The effective DG modulation of the MoS₂FET exhibited an outstanding electrical performance with a high on/off current ratio of 6 × 10⁸. Furthermore, a large threshold voltage modulation could be obtained from -20.5 to -39.3 V as a function of the TG voltage in a DG MoS₂phototransistor. Meanwhile, the optical properties were systematically explored under a series of gate biases and illuminated optical power under 550 nm laser illumination. An ultrahigh photoresponsivity of 2.04 × 10⁵AW^-1has been demonstrated with the structure of a DG MoS₂phototransistor because the electric field formed by the DG can separate photogenerated electrons and holes efficiently. Thus, the DG design for 2D materials with ultrahigh photoresponsivity provides a promising opportunity for the application of optoelectronic devices.

Local photodoping in monolayer MoS2

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS₂ transistors locally. We claim that the photodoping fills the electronic states in MoS₂ conduction band, preventing the photon-absorption and the photocurrent generation by the MoS₂ sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS₂ on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS₂ transistors and the implementation of such an effect in integrated devices.

Ultrathin Polymer Nanofibrils for Solar-Blind Deep Ultraviolet Light Photodetectors Application

Solar-blind deep ultraviolet photodetectors (DUVPDs) based on conventional inorganic ultrawide bandgap semiconductors (UWBS) have shown promising application in various civil and military fields and yet they can hardly be used in wearable optoelectronic devices and systems for lack of mechanical flexibility. In this study, we report a non-UWBS solar-blind DUVPD by designing ultrathin polymer nanofibrils with a virtual ultrawide bandgap, which was obtained by grafting P3HT with PHA via a polymerization process. Optoelectronic analysis reveals that the P3HT-b-PHA nanofibrils are sensitive to DUV light with a wavelength of 254 nm but are virtually blind to both 365 nm and other visible light illuminations. The responsivity is 120 A/W with an external quantum efficiency of up to 49700%, implying a large photoconductive gain in the photoresponse process. The observed solar-blind DUV photoresponse is associated with the resonant mode due to the leakage mode of the ultrathin polymer nanofibrils. Moreover, a flexible image sensor composed of 10 × 10 pixels can also be fabricated to illustrate their capability for image sensing application. These results signify that the present ultrathin P3HT-b-PHA nanofibrils are promising building blocks for assembly of low-cost, flexible, and high-performance solar-blind DUVPDs.

High Photoresponse in Conformally Grown Monolayer MoS2 on a Rugged Substrate

Conformal growth of atomic-thick semiconductor layers on patterned substrates can boost up the performance of electronic and optoelectronic devices remarkably. However, conformal growth is a very challenging technological task, since the control of the growth processes requires utmost precision. Herein, we report on conformal growth and characterization of monolayer MoS₂ on planar, microrugged, and nanorugged SiO₂/Si substrates via metal-organic chemical vapor deposition. The continuous and conformal nature of monolayer MoS₂ on the rugged surface was verified by high-resolution transmission electron microscopy. Strain effects were examined by photoluminescence (PL) and Raman spectroscopy. Interestingly, the photoresponsivity (∼254.5 mA/W) of as-grown MoS₂ on the nanorugged substrate was 59 times larger than that of the planar sample (4.3 mA/W) under a small applied bias of 0.1 V. This value is record high when compared with all previous MoS₂-based photocurrent generation under low or zero bias. Such enhancement in the photoresponsivity arises from a large active area for light-matter interaction and local strain for PL quenching, wherein the latter effect is the key factor and unique in the conformally grown monolayer on the nanorugged surface.

High-performance photodetector based on hybrid of MoS2 and reduced graphene oxide

2D materials are a promising new class of materials for next generation optoelectronic devices owing to their appealing optical and electrical properties. Pristine molybdenum disulfide (MoS₂) is widely used in next generation photovoltaic and optoelectronic devices, but its low photo-dark current ratio prevents its use in highly efficient photo detection applications. Here, we decorated crumpled reduced graphene oxide (rGO) particles on a large-area vertically aligned MoS₂ flake network to enhance the performance of the MoS₂-based photodetector by forming multiple nanoscale p-n heterojunctions. The rGO/MoS₂ device exhibited a significantly improved photoresponsivity of ∼2.10 A W^-1 along with a good detectivity of ∼5 × 10¹¹ Jones (Jones = cm Hz^1/2/W) compared to that of the pristine MoS₂ photodetector in ambient atmosphere. Moreover, the rGO/MoS₂ photodetector showed a fast response of ∼18 ms with excellent stability and reproducibility in ambient air even after three months. The high performance of the photodetector is attributed to enhanced photoexcited carrier density and suppressed photo generated electron-hole recombination due to the strong local built-in electric field developed at the rGO/MoS₂ interface. Our results showed that integration of rGO with MoS₂ provides an efficient platform for photo detection applications.

Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions

Spin polarization of electrons through transition metal dichalcogenides (TMDs) from ferromagnetic metals (FMs) is a fascinating phenomenon in condensed matter physics. The spin polarized current makes high- and low-resistance states in FM/TMDs/FM junctions depending on magnetization alignment of FM electrodes. We have manifested vertical spin valve junctions by incorporating MoS2 layers of different thicknesses by an ultraclean fabrication method. The current-voltage (I-V) characteristics show the ohmic contact behavior, indicating that mono-, bi-, and tri-layer MoS2 work as conducting thin film. In contrast, FM/multilayer MoS2/FM junction shows non-linear I-V characteristics and the junction resistance increases as the temperature is lowered, indicating that multilayer MoS2 provides a tunneling barrier between FM electrodes. We have found that the magnetoresistance (MR) ratio increases gradually as the thickness of the MoS2 layer is increased. Our investigation will provide a guide to make an optimal choice in the development of magnetic tunnel junctions with two-dimensional layered TMDs.

Hierarchical MoSe2 nanoflowers as novel nanocarriers for NIR-light-mediated synergistic photo-thermal/dynamic and chemo-therapy

The construction of nanoplatforms that integrate multiple therapies has attracted much attention in the field of cancer treatment. Herein, selenide molybdenum (MoSe2) nanoflowers were synthesized as nanocarriers capable of delivering NIR-mediated synergetic photothermal therapy (PTT), photodynamic therapy (PDT), and drug release. All of the MoSe2 nanoflowers (150-180 nm) are made up of many thin nanosheets of about 3-4 layers of MoSe2. With the novel hierarchical nanostructure and small band gap (1.24 eV), the as-synthesized MoSe2 nanoflowers possess strong near-infrared (NIR) absorption and high photothermal conversion efficiency (61.8%). In addition, they also exhibit NIR-stimulated ˙OH generation and this is the first time that MoSe2 nanostructures have been used as a PDT agent. The mechanism was investigated, which revealed that a sufficient number of photo-excited electrons and high O2 and H+ concentrations facilitate ˙OH production. After PEGylation, MoSe2@PEG exhibits high Dox-loading capacity due to electrostatic and π-π stacking interactions. After drug loading, the resulting MoSe2@PEG-Dox system exhibits acid/photothermal-triggered drug release. The synergistic effect of chemotherapy, PTT and PDT further induces superior cancer cell apoptosis and improved antitumor effectiveness.

Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature

Toxic gases are produced during the burning of fossil fuels. Room temperature (RT) fast detection of toxic gases is still challenging. Recently, MoS₂ transition metal dichalcogenides have sparked great attention in the research community due to their performance in gas sensing applications. However, MoS₂ based gas sensors still suffer from long response and recovery times, especially at RT. Considering this challenge, here, we report photoactivated highly reversible and fast detection of NO₂ sensors at room temperature (RT) by using mixed in-plane and edge-enriched p-MoS₂ flakes (mixed MoS₂). The sensor showed fast response with good sensitivity of ∼10.36% for 10 ppm of NO₂ at RT without complete recovery. However, complete recovery was obtained with better sensor performance under UV light illumination at RT. The UV assisted NO₂ sensing showed improved performance in terms of fast response and recovery kinetics with enhanced sensitivity to 10 ppm NO₂ concentration. The sensor performance is also investigated under thermal energy, and a better sensor performance with reduced sensitivity and high selectivity toward NO₂ was observed. A detailed gas sensing mechanism based on the density functional theory (DFT) calculations for favorable NO₂ adsorption sites on in-plane and edge-enriched MoS₂ flakes is proposed. This study revealed the role of favorable adsorption sites in MoS₂ flakes for the enhanced interaction of target gases and developed a highly sensitive, reversible, and fast gas sensor for next-generation toxic gases at room temperature.

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi₂Te₃ is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi₂Te₃ nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi₂Te₃ show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe2-WSe2 van der Waals Heterojunction-Based Field-Effect Transistors

Atomically thin two-dimensional (2D) van der Waals (vdW) heterostructures are one of the very important research issues for stacked optoelectronic device applications. In this study, using the transferred and stacked NbSe₂-WSe₂ films as electrodes and a channel, we fabricated the field-effect transistor (FET) devices based on 2D-2D vdW metal-semiconductor heterojunctions (HJs) and systematically studied their ultraviolet (UV) wavelength-dependent electrical and photoresponse properties. Upon the exposure to UV light with a wavelength of 365 nm, the NbSe₂-WSe₂ vdW HJFET devices exhibited threshold voltage shift toward positive gate bias direction, a current increase, and a nonlinear photocurrent increase upon applying a gate bias due to the contribution of the photogenerated hole current. In contrast, for the 254 nm UV-irradiated FET devices, the drain current was decreased dramatically and the threshold voltage was negatively shifted. The time-resolved photoresponse properties showed that the device current after turning off the 254 nm UV light was completely and much more rapidly recovered compared with the case of the persistent photocurrent after turning off the 365 nm UV light. Interestingly, we found that the wettability of the WSe₂ surface was changed with increasing irradiation time only after 254 nm UV irradiation. The measured wetting behavior on the WSe₂ surface provided direct evidence that the experimentally observed UV-wavelength-dependent phenomena was attributed to the UV-induced dissociative adsorption of oxygen and water molecules, leading to the modulation of charge trap states on the photogenerated and intrinsic carriers in the p-type WSe₂ channel. This study will help provide an understanding of the influence of environmental and electrical measurement conditions on the electrical and optical properties of 2D-2D vdW HJ devices for a variety of device applications through the stacking of 2D heterostructures.

UV-Activated MoS2 Based Fast and Reversible NO2 Sensor at Room Temperature

Two-dimensional materials have gained considerable attention in chemical sensing owing to their naturally high surface-to-volume ratio. However, the poor response time and incomplete recovery at room temperature restrict their application in high-performance practical gas sensors. Herein, we demonstrate ultrafast detection and reversible MoS₂ gas sensor at room temperature. The sensor's performance is investigated to NO₂ at room temperature, under thermal and photo energy. Incomplete recovery and high response time of ∼249 s of sensor are observed at room temperature. Thermal energy is enough to complete recovery, but it is at the expense of sensitivity. Further, under photo excitation, MoS₂ exhibits an enhancement in sensitivity with ultrafast response time of ∼29 s and excellent recovery to NO₂ (100 ppm) at room temperature. This significant improvement in sensitivity (∼30%) and response time (∼88%) is attributed to the charge perturbation on the surface of the sensing layer in the context of NO₂/MoS₂ interaction under optical illumination. Moreover, the sensor shows reliable selectivity toward NO₂ against various other gases. These unprecedented results reveal the potential of 2D MoS₂ to develop a low power portable gas sensor.

n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration

Molybdenum disulfide (MoS₂) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS₂ deposited on p-Si establishes a built-in electric field at MoS₂/Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al₂O₃-based passivation at the MoS₂ surface to improve the photovoltaic performance of bulklike MoS₂/Si solar cells. Interestingly, it was observed that Al₂O₃ passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS₂-based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS₂ films with Si-based electronics to develop highly efficient photovoltaic cells.

Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Hydrophilic MoSe2 Nanosheets as Effective Photothermal Therapy Agents and Their Application in Smart Devices

A facile poly(vinylpyrrolidone) (PVP)-assisted exfoliation method is utilized to simultaneously exfoliate and noncovalently modify MoSe2 nanosheets. The resultant hydrophilic nanosheets are shown to be promising candidates for biocompatible photothermal therapy (PTT) agents, and they could also be encapsulated into a hydrogel matrix for some intelligent devices. This work not only provides novel insights into exfoliation and modification of transition metal dichalcogenide (TMD) nanosheets but also might spark more research into engineering multifunctional TMD-related nanocomposites, which is in favor of further exploiting the attractive properties of these emerging layered two-dimensional (2D) nanomaterials.

Trap-induced photoresponse of solution-synthesized MoS2

We investigated, for the first time, the photoresponse characteristics of solution-synthesized MoS2 phototransistors. The photoresponse of the solution-synthesized MoS2 phototransistor was solely determined by the interactions of the photogenerated charge carriers with the surface adsorbates and the interface trap sites. Instead of contributing to the photocurrent, the illumination-generated electron-hole pairs were captured in the trap sites (surface and interface sites) due to the low carrier mobility of the solution-synthesized MoS2. The photogenerated holes discharged ions (oxygen and/or water) adsorbed onto the MoS2 surface and were released as neutral molecules. At the same time, the photogenerated electrons filled the traps present at the interface with the underlying substrate during their transport to the drain electrode. The filled trap sites significantly relieved the band bending near the surface region, which resulted in both a negative shift in the turn-on voltage and an increase in the photocurrent. The time-dependent dynamics of the solution-synthesized MoS2 phototransistors revealed persistent photoconductance due to the trapped electrons at the interface. The photoconductance was recovered by applying a short positive gate pulse. The instantaneous discharge of the trapped electrons dramatically reduced the relaxation time to less than 20 ms. This study provides an important clue to understanding the photoresponses of various optoelectronic devices prepared using solution-synthesized two-dimensional nanomaterials.

Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions

The electrical and photo-electrical properties of exfoliated MoS₂ were investigated in the dark and in the presence of deep ultraviolet (DUV) light under various environmental conditions (vacuum, N₂ gas, air, and O₂ gas). We examined the effects of environmental gases on MoS₂ flakes in the dark and after DUV illumination through Raman spectroscopy and found that DUV light induced red and blue shifts of peaks (E¹_2 g and A_1 g) position in the presence of N₂ and O₂ gases, respectively. In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS₂ field-effect transistors (FETs) remained almost the same in vacuum and N₂ gas but shifted toward positive gate voltages in air or O₂ gas because of the adsorption of oxygen atoms/molecules on the MoS₂ surface. We analyzed light detection parameters such as responsivity, detectivity, external quantum efficiency, linear dynamic range, and relaxation time to characterize the photoresponse behavior of FL-MoS₂ FETs under various environmental conditions. All parameters were improved in their performances in N₂ gas, but deteriorated in O₂ gas environment. The photocurrent decayed with a large time constant in N₂ gas, but decayed with a small time constant in O₂ gas. We also investigated the characteristics of the devices after passivating by Al₂O₃ film on the MoS₂ surface. The devices became almost hysteresis-free in the transfer characteristics and stable with improved mobility. Given its outstanding performance under DUV light, the passivated device may be potentially used for applications in MoS₂-based integrated optoelectronic circuits, light sensing devices, and solar cells.

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Room temperature spin valve effect in NiFe/WS₂/Co junctions

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

High Pressure Vibrational Properties of WS2 Nanotubes

We bring together synchrotron-based infrared and Raman spectroscopies, diamond anvil cell techniques, and an analysis of frequency shifts and lattice dynamics to unveil the vibrational properties of multiwall WS2 nanotubes under compression. While most of the vibrational modes display similar hardening trends, the Raman-active A1g breathing mode is almost twice as responsive, suggesting that the nanotube breakdown pathway under strain proceeds through this displacement. At the same time, the previously unexplored high pressure infrared response provides unexpected insight into the electronic properties of the multiwall WS2 tubes. The development of the localized absorption is fit to a percolation model, indicating that the nanotubes display a modest macroscopic conductivity due to hopping from tube to tube.

Advances in MoS2-Based Field Effect Transistors (FETs)

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS2 is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS2-based FETs are presented. Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS2-based FETs, which is crucial for developing electronic and optoelectronic devices.