Synthesis and Phase Transformation of In2Se3 and CuInSe2 Nanowires

Salt-Assisted Vapor-Liquid-Solid Growth of 1D van der Waals Materials

The method of salt-assisted vapor-liquid-solid (VLS) growth is introduced to synthesize 1D nanostructures of trichalcogenide van der Waals (vdW) materials, exemplified by niobium trisulfide (NbS3). The method uses a unique catalyst consisting of an alloy of Au and an alkali metal halide (NaCl) to enable rapid and directional growth. High yields of two types of NbS3 1D nanostructures, nanowires and nanoribbons, each with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphology and growth orientation are demonstrated. Strategies to control the location, size, and morphology of growth, and extend the growth method to synthesize other transition metal trichalcogenides, NbSe3 and TiS3, as nanowires are demonstrated. Finally, the role of the Au-NaCl alloy catalyst in guiding VLS synthesis is described and the growth mechanism based on the relationships measured between structure (growth orientation, morphology, and dimensions) and growth conditions (catalyst volume and growth time) is discussed. These results introduce opportunities to expand the library of emerging 1D vdW materials to make use of their unique properties through controlled growth at nanoscale dimensions.

Periodic Ferroelectric Stripe Domains in α-In2Se3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

The two-dimensional (2D) layered semiconductor α-In₂Se₃ has aroused great interest in atomic-scale ferroelectric transistors, artificial synapses, and nonvolatile memory devices due to its distinguished 2D ferroelectric properties. We have synthesized α-In₂Se₃ nanosheets with rare in-plane ferroelectric stripe domains at room temperature on mica substrates using a reverse flow chemical vapor deposition (RFCVD) method and optimized growth parameters. This stripe domain contrast is found to be strongly correlated to the stacking of layers, and the interrelated out-of-plane (OOP) and in-plane (IP) polarization can be manipulated by mapping the artificial domain structure. The acquisition of amplitude and phase hysteresis loops confirms the OOP polarization ferroelectric property. The emergence of striped domains enriches the variety of the ferroelectric structure types and novel properties of 2D In₂Se₃. This work paves a new way for the controllable growth of van der Waals ferroelectrics and facilitates the development of novel ferroelectric memory device applications.

Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

Nanostructured In₂Se₃ compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In₂Se₃ has caused a new upsurge of scientific interest in nanostructured In₂Se₃ and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In₂Se₃ are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In₂Se₃ compound family. Recent achievements in the preparation of low-D In₂Se₃ with controlled phases are discussed in detail. General principles for obtaining pure-phased In₂Se₃ nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In₂Se₃ with different phases are also summarized. Progress and challenges on the applications of In₂Se₃ nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In₂Se₃ materials are presented.

Distinct ultrafast carrier dynamics of α-In2Se3 and β-In2Se3: contributions from band filling and bandgap renormalization

As an intrigued layered 2D semiconductor material, indium selenide (In₂Se₃) has attracted widespread attention due to its excellent properties. So far, the carrier dynamics of α-In₂Se₃ and β-In₂Se₃ are still lacking a comprehensive understanding, which is essential to enhancing the performance of In₂Se₃-based optoelectronic devices. In this study, we explored the ultrafast carrier dynamics in thin α-In₂Se₃ and β-In₂Se₃via transient absorption microscopy. For α-In₂Se₃ with a narrower bandgap, band filling and bandgap renormalization jointly governed the time evolution of the differential reflectivity signal, whose magnitude and sign at different delays were determined by the weights between the band filling and bandgap renormalization, depending on the carrier density. For β-In₂Se₃, whose bandgap is close to the probe photon energy, only positive differential reflectivity was detected, which was attributed to strong band filling effect. In both materials, the lifetime decreased and the relative amplitude of the Auger process increased, when the pump fluence was increased. These findings could provide further insights into the optical and optoelectronic properties of In₂Se₃-based devices.

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Phase transformation in emerging two-dimensional (2D) materials is crucial for understanding and controlling the interplay between structure and electronic properties. In this work, we investigate 2D In₂Se₃ synthesized via chemical vapor deposition, a recently discovered 2D ferroelectric material. We observed that In₂Se₃ layers with thickness ranging from a single layer to ∼20 layers stabilized at the β phase with a superstructure at room temperature. At around 180 K, the β phase converted to a more stable β' phase that was distinct from previously reported phases in 2D In₂Se₃. The kinetics of the reversible thermally driven β-to-β' phase transformation was investigated by temperature-dependent transmission electron microscopy and Raman spectroscopy, corroborated with the expected minimum-energy pathways obtained from our first-principles calculations. Furthermore, density functional theory calculations reveal in-plane ferroelectricity in the β' phase. Scanning tunneling spectroscopy measurements show that the indirect bandgap of monolayer β' In₂Se₃ is 2.50 eV, which is larger than that of the multilayer form with a measured value of 2.05 eV. Our results on the reversible thermally driven phase transformation in 2D In₂Se₃ with thickness down to the monolayer limit and the associated electronic properties will provide insights to tune the functionalities of 2D In₂Se₃ and other emerging 2D ferroelectric materials and shed light on their numerous potential applications (e.g., nonvolatile memory devices).

Cation exchange synthesis of CuInxGa1−xSe2 nanowires and their implementation in photovoltaic devices

CuIn_xGa_1−xSe₂ (CIGS) nanowires were synthesized for the first time through an in situ cation exchange reaction by using CuInSe₂ (CIS) nanowires as a template material and Ga-OLA complexes as the Ga source. These CIGS nanowires maintain nearly the same morphology as CIS nanowires, and the Ga/In ratio can be controlled through adjusting the concentration of Ga-OLA complexes. The characteristics of adjustable band gap and highly effective light-absorbances have been achieved for these CIGS nanowires. The light-absorbing layer in photovoltaic devices (PVs) can be assembled by employing CIGS nanowires as a solar-energy material for enhancing the photovoltaic response. The highest power conversion efficiency of solar thin film semiconductors is more than 20%, achieved by the Cu(In_xGa_1−x)Se₂ (CIGS) thin-film solar cells. Therefore, these CIGS nanowires have a great potential to be utilized as light absorber materials for high efficiency single nanowire solar cells and to generate bulk heterojunction devices.

CuIn_xGa_1−xSe₂ (CIGS) nanowires were synthesized for the first time through an in situ cation exchange reaction by using CuInSe₂ (CIS) nanowires as a template material and Ga-OLA complexes as the Ga source.

Solution-Liquid-Solid Growth of CuInTe2 and CuInSe xTe2- x Semiconductor Nanowires

Ternary CuInTe₂ and quaternary CuInSe _xTe_{2- x} nanowires were successfully synthesized for the first time by a solution-liquid-solid (SLS) mechanism. Crystalline, straight, and nearly stoichiometric CuInTe₂ and CuInSe _xTe_{2- x} nanowires were readily achieved by using the molecular precursors and in the presence of molten Bi nanoparticles and coordinating capping ligands. The temperature and reactant order-of-addition of this reaction strongly affected the composition of the reaction product and the morphology obtained. These CuInTe₂ and CuInSe _xTe_{2- x} nanowires are outstanding light absorbers from the near-IR through the visible and ultraviolet spectral regions and, thereby, comprise new soluble and machinable "building blocks" for applications in solar-light utilization.

Room temperature in-plane ferroelectricity in van der Waals In2Se3

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β'-In₂Se₃. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In₂Se₃. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.

Generation and the role of dislocations in single-crystalline phase-change In2Se3 nanowires under electrical pulses

We report the observation of the generation of dislocations in single-crystal phase-change In2Se3 nanowires under electrical pulses and the impact of these dislocations on electrical properties. Particularly, we correlated the atomic-scale structural characteristics with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with first-principles density functional theory calculations, we show that the immobile dislocations are generated via vacancy condensations. Importantly, these dislocations lead to several orders of magnitude increase in the electrical resistance, while maintaining the single crystallinity of the lattice. These results significantly advance the fundamental understanding of the structure-property relation in this phase-change material under transient electrical excitations. From a practical perspective, the significant increase in the electrical resistance, driven by the formation of dislocations, can be exploited as a new electronic state in the single-crystalline phase in this phase-change material.

Synthesis of shape and size controlled copper indium diselenide (CuInSe2) via extrusion of selenium from 1,2,3-selenadiazole

CISe NPs were successfully synthesized via extrusion of selenium from 1,2,3-selenadiazole. The effect of various reaction parameters on the size and shape of CISe were studied.

Recent developments in the synthesis of nanostructured chalcopyrite materials and their applications: a review

Nanostructured chalcopyrites: synthesis and applications.

Solution-phase synthesis of γ-In2Se3 nanoparticles for highly efficient photocatalytic hydrogen generation under simulated sunlight irradiation

Hexagonal indium selenide (In₂Se₃) nanoparticles were successfully synthesized by a hot-injection method using triethylene glycol as solvent, which have superior and stable photocatalytic hydrogen generation under simulated sunlight irradiation.

Gate Controlled Photocurrent Generation Mechanisms in High-Gain In₂Se₃ Phototransistors

Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes, which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, because of the strong photogating effect, these direct-band gap, multilayer phototransistors produce ultrahigh gains of (9.8 ± 2.5) × 10(4) A/W and inferred detectivities of (3.3 ± 0.8) × 10(13) Jones, putting In2Se3 among the most sensitive 2D materials for photodetection studied to date.

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances

A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.

Vapour–liquid–solid growth of one-dimensional In2Se3 nanostructures and their promising field emission behaviour

Single crystalline ultra long In₂Se₃ nanowires have been grown via thermal evaporation route on Au/Si substrates and explored its field emission investigations at ∼1 × 10⁻⁸ mbar.

Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

PACS

61.46. + w; 61.41.e; 81.15.Fg; 81.07.b.

Phototransistor based on single In₂Se₃ nanosheets

Micrometer-sized single-crystalline In₂Se₃ nanosheets are synthesized by epitaxial growth from In₂Se₃nanowires. The In₂Se₃ nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In₂Se₃ nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In₂Se₃ nanosheets in a variety of optoelectronic applications.

Indium selenides: structural characteristics, synthesis and their thermoelectric performances

Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.

Wide range photodetector based on catalyst free grown indium selenide microwires

We first report the catalyst free growth of indium selenide microwires through a facile approach in a horizontal tube furnace using indium and selenium elemental powders as precursors. The synthesized microwires are γ-phase, high quality, single crystalline and grown along the [112̅0] direction. The wires have a uniform diameter of ∼1 μm and lengths of several micrometers. Photodetectors fabricated from synthesized microwires show reliable and stable photoresponse exhibiting a photoresponsivity of 0.54 A/W, external quantum efficiency of 1.23 at 633 nm with 4 V bias. The photodetector has a reasonable response time of 0.11 s and specific detectivity of 3.94 × 10(10) Jones at 633 nm with a light detection range from 350 to 1050 nm, covering the UV-vis-NIR region. The photoresponse shown by single wire is attributed to direct band gap (Eg = 1.3 eV) and superior single crystalline quality. The photoresponsive studies of single microwires clearly suggest the use of this new and facile growth technique without using catalysts for fabrication of indium selenide microwires in next-generation sensors and detectors for commercial and military applications.

Large scale and orientation-controllable nanotip structures on CuInS₂, Cu(In,Ga)S₂, CuInSe₂, and Cu(In,Ga)Se₂ by low energy ion beam bombardment process: growth and characterization

One-step facile methodology to create nanotip arrays on chalcopyrite materials (such as CuInS2, Cu(In,Ga)S2, CuInSe2, and Cu(In,Ga)Se2) via a low energy ion beam bombardment process has been demonstrated. The mechanism of formation for nanotip arrays has been proposed by sputtering yields of metals and reduction of metals induced by the ion beam bombardment process. The optical reflectance of these chalcopyrite nanotip arrays has been characterized by UV-vis spectrophotometer and the efficient light-trapping effect has been observed. Large scale (∼4'') and high density (10(10) tips/cm(2)) of chalcopyrite nanotip arrays have been obtained by using low ion energy (< 1 kV), short processing duration (< 30 min), and template-free. Besides, orientation and length of these chalcopyrite nanotip arrays are controllable. Our results can be the guide for other nanostructured materials fabrication by ion sputtering and are available for industrial production as well.

Phase formation, morphology evolution and tunable bandgap of Sn1−xSbxSe nanocrystals

The phase formation, morphology evolution and bandgap of Sn_1−xSb_xSe (0 ≤ x ≤ 0.6) nanocrystals synthesized at 230–275 °C for 5–36 h in a one-pot system were studied.

Controllable synthesis of ultrasmall CuInSe2 quantum dots for photovoltaic application

Ultrasmall CuInSe₂ quantum dots were synthesized by a facile solvothermal method and used as a sensitizer in CdS/CuInSe₂ quantum dot solar cells to improve the photovoltaic performance.

Crystalline-crystalline phase transformation in two-dimensional In2Se3 thin layers

We report, for the first time, the fabrication of single-crystal In2Se3 thin layers using mechanical exfoliation and studies of crystalline-crystalline (α → β) phase transformations as well as the corresponding changes of the electrical properties in these thin layers. Particularly, using electron microscopy and correlative in situ micro-Raman and electrical measurements, we show that, in contrast to bulk single crystals, the β phase can persist in single-crystal thin layers at room temperature (RT). The single-crystal nature of the layers before and after the phase transition allows for unambiguous determination of changes in the electrical resistivity. Specifically, the β phase has an electrical resistivity about 1-2 orders of magnitude lower than the α phase. Furthermore, we find that the temperature of the α → β phase transformation increases by as much as 130 K with the layer thickness decreasing from ~87 nm to ~4 nm. These single-crystal thin layers are ideal for studying the scaling behavior of the phase transformations and associated changes of the electrical properties. For these In2Se3 thin layers, the accessibility of the β phase at RT, with distinct electrical properties than the α phase, provides the basis for multilevel phase-change memories in a single material system.

Synthesis and photoelectric properties of Cu2ZnGeS4 and Cu2ZnGeSe4 single-crystalline nanowire arrays

Cu2ZnGeS4 (CZGS) and Cu2ZnGeSe4 (CZGSe) single crystalline nanowire arrays have been prepared via a convenient one-step nanoconfined solvothermal approach. The porous anodic aluminum oxide was used as a morphology directing template by offering nanospace in the AAO pores for confined solvothermal reaction. The structure, morphology, composition, and optical absorption properties of the as-prepared samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and a UV-vis spectrophotometer. The CZGS and CZGSe films are found to have obvious photoelectric response, indicating their potential in the application of photovoltaic devices.

Surface oxide effect on optical sensing and photoelectric conversion of α-In2Se3 hexagonal microplates

The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method using ICl3 as a transport agent. Many vacancies and surface imperfection states have been found in the bulk and on the surface of the microplate because of the intrinsic defect nature of α-In2Se3. To discover physical and chemical properties and finding technological uses of α-In2Se3, several experiments including transmission electron miscopy (TEM), X-ray photoelectron spectroscopy (XPS), surface photovoltage (SPV), photoluminescence (PL), surface photoresponse (SPR), photoconductivity (PC), and thermoreflectance (TR) measurements have been carried out. Experimental results of TEM, XPS, SPV, PL, and SPR measurements show that a surface oxidation layer α-In2Se3-3xO3x (0 ≤ x ≤ 1) has formed on the crystal face of α-In2Se3 in environmental air with the inner layer content close to In2Se3 but the outermost layer content approaching In2O3. The near band edge transitions of α-In2Se3 microplates have been probed experimentally by TR and PC measurements. The direct band gap of α-In2Se3 has been determined to be 1.453 eV. The SPV result shows a maximum quantum efficiency of the surface oxide α-In2Se3-3xO3x (0 ≤ x ≤ 1) that presents a peak photoresponse near 2.18 eV. The analyses of SPV, SPR, PL, TR, and PC measurements revealed that the surface oxide layer facilitates the conversion of the ultraviolet to the visible range while the native defects (Se and In vacancies) sustain photoconductivity in the near-infrared region. On the basis of the experimental results a wide-energy-range photodetector that combines PC- and SPR-mode operations for α-In2Se3 microplate has been made. The testing results show a well-behaved function of photoelectric conversion in the near-infrared to ultraviolet region via the auxiliary forming of surface oxide on the crystalline face of the α-In2Se3 microplates.

Wurtzite CuInS₂ and CuInxGa₁-xS₂ nanoribbons: synthesis, optical and photoelectrical properties

Single crystalline wurtzite ternary and quaternary semiconductor nanoribbons (CuInS(2), CuIn(x)Ga(1-x)S(2)) were synthesized through a solution-based method. The structure and composition of the nanoribbons were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), the corresponding fast Fourier transform (FFT) and nanoscale-resolved elemental mapping. Detailed investigation of the growth mechanism by monitoring the structures and morphologies of the nanoribbons during the growth indicates that Cu(1.75)S nanocrystals are formed first and act as a catalyst for the further growth of the nanoribbons. The high mobility of Cu(+) promotes the generation of Cu(+) vacancies in Cu(1.75)S, which will facilitate the diffusion of Cu, In or Ga species from solution into Cu(1.75)S to reach supersaturated states. The supersaturated species in the Cu(1.75)S catalyst, Cu-In-S and Cu-In-Ga-S species, start to condense and crystallize to form wurtzite CuInS(2) or CuIn(x)Ga(1-x)S(2) phases, firstly resulting in two-sided nanoparticles. Successive crystallizations gradually impel the Cu(1.75)S catalyst head forward and prolong the length of the CuInS(2) or CuIn(x)Ga(1-x)S(2) body, forming heterostructured nanorods and thus nanoribbons. The optical band gaps of CuIn(x)Ga(1-x)S(2) nanoribbons can be continuously adjusted between 1.44 eV and 1.91 eV, depending on the Ga concentration in nanoribbons. The successful preparation of those ternary and quaternary semiconductor nanoribbons provide us an opportunity to study their photovoltaic properties. The primary photoresponsive current measurements demonstrate that wurtzite CuIn(x)Ga(1-x)S(2) nanoribbons are excellent photoactive materials. Furthermore, this facile method could open a new way to synthesize other various nano-structured ternary and quaternary semiconductors, such as CuInSe(2) and CuIn(x)Ga(1-x)Se(2), for applications in solar cells and other fields.

High-density chemical intercalation of zero-valent copper into Bi2Se3 nanoribbons

A major goal of intercalation chemistry is to intercalate high densities of guest species without disrupting the host lattice. Many intercalant concentrations, however, are limited by the charge of the guest species. Here we have developed a general solution-based chemical method for intercalating extraordinarily high densities of zero-valent copper metal into layered Bi(2)Se(3) nanoribbons. Up to 60 atom % copper (Cu(7.5)Bi(2)Se(3)) can be intercalated with no disruption to the host lattice using a solution disproportionation redox reaction.

Surfactant-free CuInSe₂ nanocrystals transformed from In₂Se₃ nanoparticles and their application for a flexible UV photodetector

In(2)Se(3) nanoparticles were synthesized in an aqueous solution without using any surfactant and then chemically transformed into CuInSe(2) nanocrystals. The transformation was thermodynamically favorable and fast. The 93% production yield in mild reaction conditions allowed mass production of the CuInSe(2) nanocrystals. By the virtue of the surface charges, the CuInSe(2) nanocrystals were well dispersed in polar solvents. The surfactant-free nanocrystals enabled the formation of semiconducting CuInSe(2) films on a flexible polymer substrate without any thermal treatment. We took advantage of this to fabricate a flexible UV photodetector. The current and sensitivity of the devices could be improved by utilizing CuInSe(2) nanocrystals annealed at 160 °C in the reaction batch. On bending test, the detection sensitivity remained the same until the bending radius was reduced down to 4 mm. The dynamic response of the film device was stable and reproducible during light illumination (350 nm).

Growth of CuInSe2 and In2Se3/CuInSe2 nano-heterostructures through solid state reactions

In(2)Se(3) is an essential phase change material and CuInSe(2) is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the solar energy material via the solid state reaction. The In(2)Se(3) nanobelts (NBs) were synthesized via the vapor-liquid-solid mechanism. The chemical composition and the optical properties were investigated by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and reflectance and photoluminescence spectra. In the in situ observation of the solid state reaction with Cu to form the CuInSe(2) NBs with ultrahigh vacuum transmission electron microscopy, we observed the In(2)Se(3)/CuInSe(2) transformation at atomic scale in real time. The progression of the atomic layer at the interface provided the pertinent information on the kinetic mechanism. In(2)Se(3)/CuInSe(2) nano-heterostructures were also obtained in the present investigation. The approach to the CIGS nanosolar cell was also proposed. This study shall be beneficial in the development of high-performance nanowire solar cells and nanodevices with In(2)Se(3)/CuInSe(2) nano-heterostructures.

Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process

CuInSe(2) (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)(3) with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm-2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)(2) in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ∼ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer-Emmett-Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m(2) g(-1), which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m(2) g(-1)) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices.

Solution-liquid-solid synthesis of CuInSe₂ nanowires and their implementation in photovoltaic devices

CuInSe₂ (CIS) nanowires were synthesized by solution-liquid-solid (SLS) growth in a high boiling solvent using bismuth nanocrystals as seeds. The nanowires tended to be slightly deficient in In and exhibited either cubic or hexagonal crystal structure, depending on the synthesis conditions. The hexagonal structure, which is not observed in bulk crystals, appears to evolve from large concentrations of twin defects. The nanowires could be compressed into a free-standing fabric or paper-like material. Photovoltaic devices (PVs) were fabricated using the nanowires as the light-absorbing layer to test their viability as a solar cell material and were found to exhibit measurable PV response.