Two-Dimensional Violet Phosphorus: A p-Type Semiconductor for (Opto)electronics

Mild chemistry synthesis of ultrathin Bi2O2S nanosheets exhibiting 2D-ferroelectricity at room temperature

Modern technology demands miniaturization of electronic components to build small, light, and portable devices. Hence, discovery and synthesis of new non-toxic, low cost, ultra-thin ferroelectric materials having potential applications in various electronic and optoelectronic devices are of paramount importance. However, achieving room-temperature ferroelectricity in two dimensional (2D) ultra-thin systems remains a major challenge as conventional three-dimensional ferroelectric materials lose their ferroelectricity when the thickness is brought down below a critical value owing to the depolarization field. Herein, we report room-temperature ferroelectricity in ultra-thin single-crystalline 2D nanosheets of Bi2O2S synthesized by a simple, rapid, and scalable solution-based soft chemistry method. The ferroelectric ground state of Bi2O2S nanosheets is confirmed by temperature-dependent dielectric measurements as well as piezoelectric force microscopy and spectroscopy. High resolution transmission electron microscopy analysis and density functional theory-based calculations suggest that the ferroelectricity in Bi2O2S nanosheets arises due to the local distortion of Bi2O2 layers, which destroys the local inversion symmetry of Bi2O2S.

Constructing Interfacial Charge Transfer Channels and Electric Field in Violet Phosphorus-Based van der Waals Heterojunction for Phototherapy of Periodontitis

Periodontitis, a chronic oral disease instigated by bacteria, severely compromises human oral health. The prevailing clinical treatment for periodontitis involves mechanical scraping in conjunction with antibiotics. Phototherapy is employed to rapidly remove the bacteria and achieve periodontitis treatment, effectively circumventing the adverse effects associated with traditional therapies. Constructing 2D/2D van der Waals (VDW) heterojunctions is a key strategy for obtaining excellent photocatalytic activity. Herein, a 2D/2D violet phosphorus (VP)/Ti3C2 VDW heterojunction is designed using an interfacial engineering strategy. By constructing an electron transport "bridge" (P-Ti bond) at the heterogeneous interface as an effective transfer channel for photogenerated carriers, a compact monolithic structure between the VP and Ti3C2 phases is formed, and the spatial barrier for electron transfer at the interface is eliminated. Meanwhile, the strong directional built-in electric field induced by the intensive electron-coupling effect at the heterogeneous interface served as an internal driving force, which greatly accelerates the exciton dissociation and charge transfer in the photocatalytic process. These excited photogenerated electrons and holes are trapped by O2 and H2O on the surfaces of Ti3C2 and VP, respectively, and are subsequently catalytically converted to antibacterial reactive oxygen species (ROS). The VP/Ti3C2 VDW heterojunction eradicated 97.5% and 98.48% of Staphylococcus aureus and Escherichia coli, respectively, by photocatalytic and photothermal effects under visible light for 10 min. The VP/Ti3C2 nanoperiodontal dressing ointment effectively attenuated inflammatory response, reduced alveolar bone resorption, and promoted periodontal soft and hard tissue repair. Its periodontitis therapeutic effect outperforms the clinically used Periocline.

Probing the Strain Direction-Dependent Nonmonotonic Optical Bandgap Modulation of Layered Violet Phosphorus

Recent theoretical investigations have well-predicted strain-induced nonmonotonic optical band gap variations in low-dimensional materials. However, few two-dimensional (2D) materials are experimentally confirmed to exhibit nonmonotonic optical band gap variation under varying strain. Here, a strain-induced nonmonotonic optical bandgap variation in violet phosphorus (VP) nanosheets is observed, as evidenced by photoluminescence spectroscopy, which is reported in a few other 2D materials in knowledge. The optical bandgap variations are characterized to show the modulation rates of 41 and -24 meV/% with compression and tensile strains, respectively. Remarkably, first-principle calculations predict and clarify the nonmonotonic modulation accurately, highlighting its relationship with the strain direction-dependent asymmetric distribution of conduction band minimum wavefunctions, demonstrating that this unique nonmonotonic optical bandgap modulation is determined by the distinctive crystal structure of VP. This work provides a deep insight into the design of 2D materials toward optoelectronic and photoelectrochemical applications via strain engineering.

Ultrasensitive Near-Infrared Polarization Photodetectors with Violet Phosphorus/InSe van der Waals Heterostructures

Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures have presented great impact for the development of a wide range of technologies, such as in the optoelectronics and communication fields. Nevertheless, the lack of a photogenerated charge carrier at the device's interface leads to a poor charge carrier collection efficiency and a low linear dichroism ratio, hindering the achievement of high-performance optoelectronic devices with multifunctionalities. Herein, we present a type-II violet phosphorus (VP)/InSe vdW heterostructure that is predicted via density functional theory calculation and confirmed by Kelvin probe force microscopy. Benefiting from the type-II band alignment, the VP/InSe vdW heterostructure-based photodetector achieves excellent photodetection performance such as a responsivity (R) of 182.8 A/W, a detectivity (D*) of 7.86 × 1012 Jones, and an external quantum efficiency (EQE) of 11,939% under a 1064 nm photon excitation. Furthermore, the photodetection performance can be enhanced by manipulating the device geometry by inserting a few layers of graphene between the VP and InSe (VP/Gr/InSe). Remarkably, the VP/Gr/InSe vdW heterostructure shows a competitive polarization sensitivity of 2.59 at 1064 nm and can be integrated as an image sensor. This work demonstrates that VP/InSe and VP/Gr/InSe vdW heterostructures will be effective for promising integrated NIR optoelectronics.

Regulation of band gap and localized surface plasmon resonance by loading Au nanorods on violet phosphene nanosheets for photodynamic/photothermal synergistic anti-infective therapy

In the face of the serious threat to human health and the economic burden caused by bacterial antibiotic resistance, 2D phosphorus nanomaterials have been widely used as antibacterial agents. Violet phosphorus nanosheets (VPNSs) are an exciting bandgap-adjustable 2D nanomaterial due to their good physicochemical properties, yet the study of VPNS-based antibiotics is still in its infancy. Here, a composite of gold nanorods (AuNRs) loaded onto VPNS platforms (VPNS/AuNR) is constructed to maximize the potential of VPNSs for antimicrobial applications. The loading with AuNRs not only enhances the photothermal performance via a localized surface plasmon resonance (LSPR) effect, but also enhances the light absorption capacity due to the narrowing of the band gap of the VPNSs, thus increasing the ROS generation capacity. The results demonstrate that VPNS/AuNR exhibits outstanding antibacterial properties and good biocompatibility. Attractively, VPNS/AuNR is then extensively tested for treating skin wound infections, suggesting promising in vivo antibacterial and wound-healing features. Our findings may open a novel direction to develop a versatile VPNS-based treatment platform, which can significantly boost the progress of VPNS exploration.

Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer-free VP flakes have not been demonstrated. Herein, a bismuth-assisted vapor phase transport technique is designed to grow uniform single-crystal VP flakes on the SiO2 /Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid-exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W-1 and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high-sensitivity photodetection. As a result, the detectivity is 1.38 × 1013 Jones that is comparable with that of the vdW p-n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single-crystal semiconductor thin films.

Photodegradation and van der Waals Passivation of Violet Phosphorus

Violet phosphorus (VP), a novel two-dimensional (2D) nanomaterial, boasts structural anisotropy, a tunable optical bandgap, and superior thermal stability compared with its allotropes. Its multifunctionality has sparked widespread interest in the community. Yet, the VP's air susceptibility impedes both probing its intrinsic features and device integration, thus making it of urgent significance to unveil the degradation mechanism. Herein, we conduct a comprehensive study of photoactivated degradation effects on VP. A nitrogen annealing method is presented for the effective elimination of surface adsorbates from VP, as evidenced by a giant surface-roughness improvement from 65.639 nm to 7.09 nm, enabling direct observation of the intrinsic morphology changes induced by photodegradation. Laser illumination demonstrates a significant thickness-thinning effect on VP, manifested in the remarkable morphological changes and the 73% quenching of PL intensity within 160 s, implying its great potential for the efficient selected-area etching of VP at high resolution. Furthermore, van der Waals passivation of VP using 2D hexagonal boron nitride (hBN) was achieved. The hBN-passivated channel exhibited improved surface roughness (0.512 nm), reduced photocurrent hysteresis, and lower responsivity (0.11 A/W @ 450 nm; 2 μW), effectively excluding adsorbate-induced electrical and optoelectrical effects while disabling photodegradation. Based on our experimental results, we conclude that three possible factors contribute to the photodegradation of VP: illumination with photon energy higher than the bandgap, adsorbed H2O, and adsorbed O2.

Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual-Olfactory Crossmodal Perception

The crossmodal interaction of different senses, which is an important basis for learning and memory in the human brain, is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception, but related researches are scarce. Here, we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus (VP) van der Waals heterojunctions. Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene, the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude, reaching up to 7.7 A W-1. Excited by ultraviolet light, multiple synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, short/long-term plasticity and "learning-experience" behavior, were demonstrated with a low power consumption. Furthermore, the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments, enabling it to simulate the interaction of visual and olfactory information for crossmodal perception. This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.

Discriminative Analysis of NOx Gases by Two-Dimensional Violet Phosphorus Field-Effect Transistors

Two-dimensional violet phosphorus (VP) has emerged as a new sensing material in various sensing applications due to its unique electrical properties and high stability among allotropes of phosphorus. Currently, the research of the VP-based analysis method is at the early stage. In this work, a VP nanosheet-based field-effect transistor (FET) sensor is reported for the detection of NO2 and N2O gases with extraordinary sensing performance. This sensor can achieve excellent sensitivity of up to ∼50% current change/ppm and a low detection limit of 5.9 ppb and enables the NO2 analysis in various mixed gases. Moreover, this sensor can effectively distinguish between NO2 and N2O gases, which is a big challenge for current FET or chemiresistor gas sensors. The different sensing behaviors of the VP sensor to NO2 and N2O gases have been investigated, and the mechanism study shows that the adsorption energy, bond length of the gas molecule on the VP surface, and the decomposition of N2O led to the differential responses. This work is one of the pioneer studies of VP gas sensors and presents a new sensing method for the discriminative analysis of NO2 and N2O for greenhouse gas emission monitoring and air quality control.

Two-Dimensional Silver-Chalcogenolate-Based Cluster-Assembled Material: A p-type Semiconductor

We have synthesized and characterized a new two-dimensional honeycomb architecture resembling a single-layer of atomically precise silver cluster-assembled material (CAM), [Ag12(StBu)6(CF3COO)6(4,4'-azopyridine)3] (Ag12-azo-bpy). The interlayer noncovalent van der Waals interactions within the single-crystals were successfully disrupted, leading to the creation of this unique structure. The optimized Ag12-azo-bpy CAM demonstrates a valence band that is localized on the Ag12 cluster node situated near the Fermi energy level. This localization induces electron injection from the linker to the cluster node, facilitating efficient charge transportation along the plane. Exploiting this single-layer structure as a distinctive platform for p-type channel material, it was employed in a field-effect transistor configuration. Remarkably, the transistor exhibits a high hole mobility of 1.215 cm2 V-1 s-1 and an impressive ON/OFF current ratio of ∼4500 at room-temperature.

Violet Antimony Phosphorus with Enhanced Photocatalytic Hydrogen Evolution

Violet phosphorus (VP), a recently confirmed layered elemental structure, is demonstrated to have unique photoelectric, mechanical, and photocatalytic properties. Element substitution plays a significant role in modifying the physical/chemical properties of semiconducting materials. Herein, antimony is adopted to substitute some phosphorus atoms in VP crystals to tune their physical and chemical properties, resulting in a significantly enhanced photocatalytic hydrogen evolution performance. The antimony-substituted violet phosphorus single crystal (VP-Sb) is synthesized and characterized by single crystal X-ray diffraction (CSD-2214937). The bandgap of VP-Sb has been found to be lowered from that of VP by UV/vis diffuse reflectance spectroscopy and density-functional theory (DFT) calculation, enhancing the optical absorption during photocatalytic reaction. The conducting band minimum of VP-Sb is found to be upshifted from that of VP from measurements and calculation, enhancing its hydrogen reduction activity. The valance band maximum is found to be lowered to weaken its oxidation activity. The edge of VP-Sb is calculated to have an excellent H* adsorption-desorption performance and superior H2 generation kinetics. The H2 evolution rate of VP-Sb is demonstrated to be significantly enhanced to be 1473 µmol h-1 g-1 , about five times of that of pristine VP (299 µmol h-1 g-1 ) under the same experimental conditions.

Type-II Red Phosphorus: Wavy Packing of Twisted Pentagonal Tubes

Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining state-of-the-art structural characterization techniques. Electron diffraction tomography, atomic-resolution scanning transmission electron microscopy (STEM), powder X-ray diffraction, and Raman spectroscopy were concurrently used to elucidate the hidden structural motifs and their packing in type-II RP. Electron diffraction tomography, performed using individual crystalline nanowires, was used to identify a triclinic unit cell with volume of 5330 Å3 , which is the largest unit cell for elemental phosphorus crystals up to now and contains approximately 250 phosphorus atoms. Atomic-resolution STEM imaging, which was performed along different crystal-zone axes, confirmed that the twisted wavy tubular motif is the basic building block of type-II RP. Our study discovered and presented a new variation of building blocks in phosphorus, and it provides insights to clarify the complexities observed in phosphorus as well as other relevant systems.

Renaissance of elemental phosphorus materials: properties, synthesis, and applications in sustainable energy and environment

The polymorphism of phosphorus-based materials has garnered much research interest, and the variable chemical bonding structures give rise to a variety of micro and nanostructures. Among the different types of materials containing phosphorus, elemental phosphorus materials (EPMs) constitute the foundation for the synthesis of related compounds. EPMs are experiencing a renaissance in the post-graphene era, thanks to recent advancements in the scaling-down of black phosphorus, amorphous red phosphorus, violet phosphorus, and fibrous phosphorus and consequently, diverse classes of low-dimensional sheets, ribbons, and dots of EPMs with intriguing properties have been produced. The nanostructured EPMs featuring tunable bandgaps, moderate carrier mobility, and excellent optical absorption have shown great potential in energy conversion, energy storage, and environmental remediation. It is thus important to have a good understanding of the differences and interrelationships among diverse EPMs, their intrinsic physical and chemical properties, the synthesis of specific structures, and the selection of suitable nanostructures of EPMs for particular applications. In this comprehensive review, we aim to provide an in-depth analysis and discussion of the fundamental physicochemical properties, synthesis, and applications of EPMs in the areas of energy conversion, energy storage, and environmental remediation. Our evaluations are based on recent literature on well-established phosphorus allotropes and theoretical predictions of new EPMs. The objective of this review is to enhance our comprehension of the characteristics of EPMs, keep abreast of recent advances, and provide guidance for future research of EPMs in the fields of chemistry and materials science.

Air-Stable Violet Phosphorus/MoS2 van der Waals Heterostructure for High-Responsivity and Gate-Tunable Photodetection

Violet phosphorus (VP), a newly emerging elemental 2D semiconductor, with attractive properties such as tunable bandgap, high carrier mobility, and unusual structural anisotropy, offers significant opportunities for designing high-performance electronic and optoelectronic devices. However, the study on fundamental property and device application of 2D VP is seriously hindered by its inherent instability in ambient air. Here, a VP/MoS2 van der Waals heterostructure is constructed by vertically staking few-layer VP and MoS2 , aiming to utilize the synergistic effect of the two materials to achieve a high-performance 2D photodetector. The strong optical absorption of VP combining with the type-II band alignment of VP/MoS2 heterostructure make VP play a prominent photogating effect. As a result, the VP/MoS2 heterostructure photodetector achieves an excellent photoresponse performances with ultrahigh responsivity of 3.82 × 105  A W-1 , high specific detectivity of 9.17 × 1013 Jones, large external quantum efficiency of 8.91 × 107 %, and gate tunability, which are much superior to that of individual MoS2 device or VP device. Moreover, the VP/MoS2 heterostructure photodetector indicates superior air stability due to the effective protection of VP by MoS2 encapsulation. This work sheds light on the future study of the fundamental property and optoelectronic device application of VP.

Synthesis of violet phosphorus with large lateral sizes to facilitate nano-device fabrications

Violet phosphorus has been proven to be the most stable phosphorus allotrope and has attracted much attention recently. The growth of violet phosphorus with large lateral sizes is crucial to obtain good quality violet phosphorene for nanodevice fabrication. Herein, a large number of violet phosphorus plates have been produced from molten lead using an optimized method to achieve red bronze luster. The crystal structure of the as-produced violet phosphorus was determined by single-crystal X-ray diffraction to be monoclinic with the space group P2/n (13) (CSD-2160375), identical to the one from the chemical vapor transport method (CSD-1935087). The as-produced violet phosphorus plates were found to have lateral sizes of 1.30 ± 0.41 mm². The violet phosphorus plates were easily exfoliated and directly transferred to silicon substrates to facilitate building of a back-gate field-effect transistor. A hole mobility of 2.308 cm² V^-1 s^-1 was obtained from a violet phosphorus nanosheet with a thickness of 52 nm under ambient conditions. The absolute responsivity of 130 mA W^-1 with a fast response time of 27 ms was also obtained under the irradiation of a 530 nm laser.

Partially Oxidized Violet Phosphorus as an Excellent Lubricant Additive for Tribological Applications

As a novel two-dimensional material, violet phosphorus (VP) has attracted a considerable amount of attention due to its high carrier mobility, anisotropy, wide band gap, stability, and easy stripping properties. In this work, the microtribological properties of partially oxidized VP (oVP) and the mechanism of reducing friction and wear as additives in oleic acid (OA) oil were studied systematically. When adding oVP to OA, the coefficient of friction (COF) decreased from 0.084 to 0.014 with the steel-to-steel pair, and the ultralow shearing strength tribofilm consisting of amorphous carbon and phosphorus oxides that formed resulted in the reductions of COF and wear rate individually by 83.3% and 53.9%, respectively, compared with those of pure OA. The results extended the application scenarios for VP in the design of lubricant additives.

An Optoelectronic Synapse Based on Two-Dimensional Violet Phosphorus Heterostructure

Neuromorphic computing can efficiently handle data-intensive tasks and address the redundant interaction required by von Neumann architectures. Synaptic devices are essential components for neuromorphic computation. 2D phosphorene, such as violet phosphorene, show great potential in optoelectronics due to their strong light-matter interactions, while current research is mainly focused on synthesis and characterization, its application in photoelectric devices is vacant. Here, the authors combined violet phosphorene and molybdenum disulfide to demonstrate an optoelectronic synapse with a light-to-dark ratio of 10⁶ , benefiting from a significant threshold shift due to charge transfer and trapping in the heterostructure. Remarkable synaptic properties are demonstrated, including a dynamic range (DR) of > 60 dB, 128 (7-bit) distinguishable conductance states, electro-optical dependent plasticity, short-term paired-pulse facilitation, and long-term potentiation/depression. Thanks to the excellent DR and multi-states, high-precision image classification with accuracies of 95.23% and 79.65% is achieved for the MNIST and complex Fashion-MNIST datasets, which is close to the ideal device (95.47%, 79.95%). This work opens the way for the use of emerging phosphorene in optoelectronics and provides a new strategy for building synaptic devices for high-precision neuromorphic computing.

Prospective applications of two-dimensional materials beyond laboratory frontiers: A review

The development of nanotechnology has been advancing for decades and gained acceleration in the 21st century. Two-dimensional (2D) materials are widely available, giving them a wide range of material platforms for technological study and the advancement of atomic-level applications. The design and application of 2D materials are discussed in this review. In order to evaluate the performance of 2D materials, which might lead to greater applications benefiting the electrical and electronics sectors as well as society, the future paradigm of 2D materials needs to be visualized. The development of 2D hybrid materials with better characteristics that will help industry and society at large is anticipated to result from intensive research in 2D materials. This enhanced evaluation might open new opportunities for the synthesis of 2D materials and the creation of devices that are more effective than traditional ones in various sectors of application.

Degenerate and non-degenerate all-optical switches using violet phosphorus nanosheets

As an allotrope of phosphorus, layered violet phosphorus (VP) has a wide range of applications in electronics, photonics, and optoelectronics. However, its nonlinear optical properties remain to be explored. In this work, we prepare and characterize VP nanosheets (VP Ns), investigate their spatial self-phase modulation (SSPM) effects, and develop them in all-optical switching applications. The ring forming time of SSPM and the third-order nonlinear susceptibility of monolayer VP Ns were found to be about 0.4 s and 10^-9 esu, respectively. The mechanism of SSPM formed by coherent light-VP Ns interaction is analyzed. Using the superior coherence electronic nonlinearity of VP Ns, we realize degenerate and non-degenerate all-optical switches based on the SSPM effect. It is demonstrated that the performance of all-optical switching can be controlled by adjusting the intensity of the control beam and/or the wavelength of the signal beam. The results will help us to better design and realize non-degenerate nonlinear photonic devices based on two-dimensional nanomaterials.

Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P₁₁ was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P₁₁ were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P₁₁ was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) ų. The structure differences between violet-P₁₁, violet-P₂₁, and fibrous-P₂₁ are discussed. The violet-P₁₁ crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P₁₁, and exfoliated violet-P₁₁ flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P₁₁ crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P₁₁ bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P₁₁ is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.

Violet Phosphorus Nanosheet: A Biocompatible and Stable Platform for Stimuli-Responsive Multimodal Cancer Phototherapy

As a functional 2D material, black phosphorus (BP) has garnered wide attention from many researchers in recent years. BP has a wide NIR absorption window and is a promising candidate for cancer phototherapy including photothermal therapy (PTT) and photodynamic therapy (PDT). However, due to its rapid degradation and short shelf-life in conventional water, the application of BP in the field of cancer therapy is limited. Violet phosphorus (VP), the more stable allotrope of phosphorus, has not yet been investigated for its function and biological application. In this study, VP nanosheets are successfully fabricated by liquid-phase exfoliation and demonstrated that their shelf-life in deionized water could be as long as 10 days, which is much longer than that of BP. Through in vivo and in vitro experiments, the PDT, PTT, and catalytic therapeutic effects of VP, as well as its excellent biosafety for the first time are shown. VP effectively inhibits tumor growth without causing major side effects. The current study provides new ideas and strategies for the biological application of 2D sheets of phosphorus isotope and lays the foundation for further studies on exploring the biomedical application of phosphorus isotopes.

P-Type 2D Semiconductors for Future Electronics

2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.