Improved Carrier Collection and Hot Electron Extraction Across Perovskite, C60, and TiO2 Interfaces

Enhancing Extraction and Suppressing Cooling of Hot Electrons in Lead Halide Perovskites by Dipolar Surface Passivation

Slowing hot carrier (HC) cooling and improving HC extraction are considered two pivotal factors for enhancing power conversion efficiency in emerging HC photovoltaic applications of perovskites and other materials. Employing ab initio quantum dynamics simulations, we demonstrate the simultaneous slow cooling and efficient extraction of hot electrons at the C60/CsPbI3 interface through dipolar surface passivation with phenethylammonium and 4-fluorophenethylammonium ligands. The passivation effectively suppresses I-Pb lattice vibrations, weakens the hot electron-phonon interaction in CsPbI3, and thus slows down the HC cooling. At the same time, the dipolar surface passivation elevates the LUMO + 1 state in C60 and reduces the energy gap for HC extraction. Concurrently, higher-frequency vibrations of the dipolar layer enhance the coupling between C60 and CsPbI3, promoting efficient HC extraction further. These phenomena are intensified with increased polarity of the dipolar layer. Furthermore, we find that dipolar passivation has the opposite influence on cold electron collection at the band edge, underscoring the fact that the observed improvement in photovoltaic performance stems preferentially from the effective utilization of HCs rather than cold electrons. The work provides a new strategy for achieving high-performance HC perovskite solar cells.

Effect of Single-Crystal TiO2/Perovskite Band Alignment on the Kinetics of Electron Extraction

The kinetics of electron extraction at the electron transfer layer/perovskite interface strongly affects the efficiency of a perovskite solar cell. By combining transient absorption and time-resolved photoluminescence spectroscopy, the electron extraction process between FA0.83Cs0.17Pb(I0.83Br0.17)3 and TiO2 single crystals with different orientations of (100), (110), and (111) were probed from subpicosecond to several hundred nanoseconds. It was revealed that the band alignment between the constituents influenced the relative electron extraction process. TiO2(100) showed the fastest overall and hot electron transfer, owing to the largest conduction band and Fermi level offset compared to FA0.83Cs0.17Pb(I0.83Br0.17)3. It was found that an early electron accumulation in these systems can have an influence on the following electron extraction on the several nanosecond time scale. Furthermore, the existence of a potential barrier at the TiO2/perovskite interface was also revealed by performing excitation fluence-dependent measurements.

Unraveling the Role of Perovskite in Buried Interface Passivation

Interfaces in perovskite solar cells play a crucial role in their overall performance, and therefore, detailed fundamental studies are needed for a better understanding. In the case of the classical n-i-p architecture, TiO2 is one of the most used electron-selective layers and can induce chemical reactions that influence the performance of the overall device stack. The interfacial properties at the TiO2/perovskite interface are often neglected, owing to the difficulty in accessing this interface. Here, we use X-rays of variable energies to study the interface of (compact and mesoporous) TiO2/perovskite in such a n-i-p architecture. The X-ray photoelectron spectroscopy and X-ray absorption spectroscopy methods show that the defect states present in the TiO2 layer are passivated by a chemical interaction of the perovskite precursor solution during the formation of the perovskite layer and form an organic layer at the interface. Such passivation of intrinsic defects in TiO2 removes charge recombination centers and shifts the bands upward. Therefore, interface defect passivation by oxidation of Ti3+ states, the organic cation layer, and an upward band bending at the TiO2/perovskite interface explain the origin of an improved electron extraction and hole-blocking nature of TiO2 in the n-i-p perovskite solar cells.

Carriers, Quasi-particles, and Collective Excitations in Halide Perovskites

Halide perovskites (HPs) are potential game-changing materials for a broad spectrum of optoelectronic applications ranging from photovoltaics, light-emitting devices, lasers to radiation detectors, ferroelectrics, thermoelectrics, etc. Underpinning this spectacular expansion is their fascinating photophysics involving a complex interplay of carrier, lattice, and quasi-particle interactions spanning several temporal orders that give rise to their remarkable optical and electronic properties. Herein, we critically examine and distill their dynamical behavior, collective interactions, and underlying mechanisms in conjunction with the experimental approaches. This review aims to provide a unified photophysical picture fundamental to understanding the outstanding light-harvesting and light-emitting properties of HPs. The hotbed of carrier and quasi-particle interactions uncovered in HPs underscores the critical role of ultrafast spectroscopy and fundamental photophysics studies in advancing perovskite optoelectronics.

Photoinduced interfacial electron transfer from perovskite quantum dots to molecular acceptors for solar cells

Bandgap-engineered inorganic and hybrid halide perovskite (HP) films, nanocrystals, and quantum dots (PQDs) are promising for solar cells. Fluctuations of photoinduced electron transfer (PET) rates affect the interfacial charge separation efficiencies of such solar cells. Electron donor- or acceptor-doped perovskite samples help analyze PET and harvest photogenerated charge carriers efficiently. Therefore, PET in perovskite-based donor-acceptor (D-A) systems has received considerable attention. We analyzed the fluctuations of interfacial PET from MAPbBr₃ or CsPbBr₃ PQDs to classical electron acceptors such as 7,7,8,8-tetracyanoquinodimethane (TCNQ) and 1,2,4,5-tetracyanobenzene (TCNB) at single-particle and ensemble levels. The significantly negative Gibbs free energy changes of PET estimated from the donor-acceptor redox potentials, the donor-acceptor sizes, and the solvent dielectric properties help us clarify the PET in the above D-A systems. The dynamic nature of PET is apparent from the decrease in photoluminescence (PL) lifetimes and PL photocounts of PQDs with an increase in the acceptor concentrations. Also, the acceptor radical anion spectrum helps us characterize the charge-separated states. Furthermore, the PL blinking time and PET rate fluctuations (10⁸ to 10⁷ s^-1) provide us with single-molecule level information about interfacial PET in perovskites.

Elucidating the Unique Hot Carrier Cooling in Two-Dimensional Inorganic Halide Perovskites: The Role of Out-of-Plane Carrier-Phonon Coupling

Two-dimensional (2D) halide perovskites represent the natural semiconductor quantum wells (QWs), which hold great promise for optoelectronics. However, due to the hybrid structure of Ruddlesden-Popper 2D perovskites, the intrinsic nature of hot-carrier kinetics remains shielded within. Herein, we adopt CsPbBr₃ nanoplates as a model system to reveal the intrinsic carrier dynamics in inorganic perovskite QWs. Interestingly, we revealed an ultrafast and hot-phonon-bottleneck (HPB)-free carrier cooling in monodisperse CsPbBr₃ QWs, which is in sharp contrast to the bulk and nanocrystalline perovskites. The absence of HPB was attributed to the efficient out-of-plane triplet-exciton-LO-phonon coupling in 2D perovskites because of the structural anisotropy. Accordingly, the HPB can be activated by shutting down the out-of-plane energy loss route through forming the layer-stacked perovskite superlattice. The controllable on and off of HPB may provide new possibilities in optoelectronic devices and these findings deepen the understanding of a hot-carrier cooling mechanism in 2D perovskites.

Dual Enhancement of Carrier Generation and Migration on Au/g-C3N4 photocatalysts for High-Efficient Broadband PET-RAFT Polymerization

Photo-induced electron/energy transfer RAFT (PET-RAFT) polymerization can produce well-defined polymers with spatio-temporal control. Semiconductor graphitic carbon nitride (g-C3N4) as thermally and chemically stable photocatalyst, has achieved PET-RAFT method under UV-irradiation...

Impedance Spectroscopy of Metal Halide Perovskite Solar Cells from the Perspective of Equivalent Circuits

Impedance spectroscopy (IS) provides a detailed understanding of the dynamic phenomena underlying the operation of photovoltaic and optoelectronic devices. Here we provide a broad summary of the application of IS to metal halide perovskite materials, solar cells, electrooptic and memory devices. IS has been widely used to characterize perovskite solar cells, but the variability of samples and the presence of coupled ionic-electronic effects form a complex problem that has not been fully solved yet. We summarize the understanding that has been obtained so far, the basic methods and models, as well as the challenging points still present in this research field. Our approach emphasizes the importance of the equivalent circuit for monitoring the parameters that describe the response and providing a physical interpretation. We discuss the possibilities of models from the general perspective of solar cell behavior, and we describe the specific aspects and properties of the metal halide perovskites. We analyze the impact of the ionic effects and the memory effects, and we describe the combination of light-modulated techniques such as intensity modulated photocurrent spectroscopy (IMPS) for obtaining more detailed information in complex cases. The transformation of the frequency to time domain is discussed for the consistent interpretation of time transient techniques and the prediction of features of current-voltage hysteresis. We discuss in detail the stability issues and the occurrence of transformations of the sample coupled to the measurements.

Dynamics of photoconversion processes: the energetic cost of lifetime gain in photosynthetic and photovoltaic systems

The continued development of solar energy conversion technologies relies on an improved understanding of their limitations. In this review, we focus on a comparison of the charge carrier dynamics underlying the function of photovoltaic devices with those of both natural and artificial photosynthetic systems. The solar energy conversion efficiency is determined by the product of the rate of generation of high energy species (charges for solar cells, chemical fuels for photosynthesis) and the energy contained in these species. It is known that the underlying kinetics of the photophysical and charge transfer processes affect the production yield of high energy species. Comparatively little attention has been paid to how these kinetics are linked to the energy contained in the high energy species or the energy lost in driving the forward reactions. Here we review the operational parameters of both photovoltaic and photosynthetic systems to highlight the energy cost of extending the lifetime of charge carriers to levels that enable function. We show a strong correlation between the energy lost within the device and the necessary lifetime gain, even when considering natural photosynthesis alongside artificial systems. From consideration of experimental data across all these systems, the emprical energetic cost of each 10-fold increase in lifetime is 87 meV. This energetic cost of lifetime gain is approx. 50% greater than the 59 meV predicted from a simple kinetic model. Broadly speaking, photovoltaic devices show smaller energy losses compared to photosynthetic devices due to the smaller lifetime gains needed. This is because of faster charge extraction processes in photovoltaic devices compared to the complex multi-electron, multi-proton redox reactions that produce fuels in photosynthetic devices. The result is that in photosynthetic systems, larger energetic costs are paid to overcome unfavorable kinetic competition between the excited state lifetime and the rate of interfacial reactions. We apply this framework to leading examples of photovoltaic and photosynthetic devices to identify kinetic sources of energy loss and identify possible strategies to reduce this energy loss. The kinetic and energetic analyses undertaken are applicable to both photovoltaic and photosynthetic systems allowing for a holistic comparison of both types of solar energy conversion approaches.

Long-Range Interfacial Charge Carrier Trapping in Halide Perovskite-C60 and Halide Perovskite-TiO2 Donor-Acceptor Films

Interfacial electron transfer across perovskite-electron acceptor heterojunctions plays a significant role in the power-conversion efficiency of perovskite solar cells. Thus, electron donor-acceptor thin films of halide perovskite nanocrystals receive considerable attention. Nevertheless, understanding and optimizing distance- and thickness-dependent electron transfer in perovskite-electron acceptor heterojunctions are important. We reveal the distance-dependent and diffusion-controlled interfacial electron transfer across donor-acceptor heterojunction films formed by formamidinium or cesium lead bromide (FAPbBr₃/CsPbBr₃) perovskite nanocrystals with TiO₂/C₆₀. Self-assembled nanocrystal films prepared from FAPbBr₃ show a longer photoluminescence lifetime than a solution, showing a long-range carrier migration. The acceptors quench the photoluminescence intensity but not the lifetime in a solution, revealing a static electron transfer. Conversely, the electron transfer in the films changes from dynamic to static by moving toward the donor-acceptor interface. While radiative recombination dominates the electron transfer at 800 μm or farther, the acceptors scavenge the photogenerated carriers within 100 μm. This research highlights the significance of interfacial electron transfer in perovskite films.

Enhancing Photoelectric Response of an Au@Ag/AgI Schottky Contact through Regulation of Localized Surface Plasmon Resonance

Carrier generation and migration are both pivotal to photoelectric (PE) response. Formation of a Schottky contact is conducive to promote carrier migration but cannot fundamentally magnify carrier generation, limiting the eventual PE performance. In this work, an Au@Ag/AgI Schottky contact is established by in situ growth of AgI nanotriangles on the surface of Au@Ag nanoparticles (NPs), and PE enhancement of the Schottky contact is realized by regulating localized surface plasmon resonance (LSPR) properties. In comparison with Ag/AgI Schottky contact, assembly of Au NPs in the center of Ag NPs adjusts the dominated LSPR property from hot-electron transfer (HET) to plasmon-induced resonance energy transfer (PIRET). With the concurrent manipulation of HET and PIRET, additional energy can be employed for carrier generation, while photogenerated electrons offset by hot electrons are reduced, which jointly enlarges PE responses of the Au@Ag/AgI Schottky contact up to 4 times. Benefitted from the etching of thiols to Ag-based materials, the Au@Ag/AgI Schottky contact is further applied to the construction of a photoelectrochemical cysteine sensor. This work proposes a general strategy to enhance PE responses of Schottky contacts, which may advance the design of LSPR-related PE systems.

There is plenty of room at the top: generation of hot charge carriers and their applications in perovskite and other semiconductor-based optoelectronic devices

Hot charge carriers (HC) are photoexcited electrons and holes that exist in nonequilibrium high-energy states of photoactive materials. Prolonged cooling time and rapid extraction are the current challenges for the development of future innovative HC-based optoelectronic devices, such as HC solar cells (HCSCs), hot energy transistors (HETs), HC photocatalytic reactors, and lasing devices. Based on a thorough analysis of the basic mechanisms of HC generation, thermalization, and cooling dynamics, this review outlines the various possible strategies to delay the HC cooling as well as to speed up their extraction. Various materials with slow cooling behavior, including perovskites and other semiconductors, are thoroughly presented. In addition, the opportunities for the generation of plasmon-induced HC through surface plasmon resonance and their technological applications in hybrid nanostructures are discussed in detail. By judiciously designing the plasmonic nanostructures, the light coupling into the photoactive layer and its optical absorption can be greatly enhanced as well as the successful conversion of incident photons to HC with tunable energies can also be realized. Finally, the future outlook of HC in optoelectronics is highlighted which will provide great insight to the research community.

Illumination Intensity Dependence of the Recombination Mechanism in Mixed Perovskite Solar Cells

Recombination mechanisms in solar cells are frequently assessed through the determination of ideality factors. In this work we report an abrupt change of the value of the "apparent" ideality factor (nAP ) in high-efficiency FA0.71 MA0.29 PbI2.9 Br0.1 based mesoscopic perovskite solar cells as a function of light intensity. This change is manifested as a transition from a regime characterized by nAP ∼1.8-2.5 at low light intensities (<10 mWcm-2 ) to one characterized by nAP ∼1. This transition is equally observed in the recombination resistance extracted from open-circuit impedance measurements. We use drift-diffusion simulations with explicit consideration of ion migration to determine the origin of this transition. We find that a change ofrecombination mechanism concurrent with a modification of the concentration of ionic vacancies is the most likely explanation of the observed behaviour. In the drift-diffusion simulations we show that the apparent ideality factor is in fact affected by the ion vacancy concentration so it is not the optimal parameter to assess the dominant recombination mechanism. We argue that a procedure based on a recently derived "electronic" ideality factor obtained from the high frequency feature of the impedance spectrum is better suited to determine the recombination route that dictates the photovoltage.

From Frequency Domain to Time Transient Methods for Halide Perovskite Solar Cells: The Connections of IMPS, IMVS, TPC, and TPV

The correlation of different methods of measurement can become an important tool to identify the dominant physical elements that govern the electronic and ionic dynamics in perovskite solar cells. The diverse phenomena underlying the response of halide perovskite materials to different stimuli are reflected in time-domain measurements, where transients appear with time scales spanning orders of magnitude, from nanoseconds to hours. We discuss the connection between different frequency- and time-domain methods to probe the voltage and current response of halide perovskite solar cells to different small perturbations. To solve the frequency-to-time transformation, we start from models of the transfer function of intensity-modulated photocurrent spectroscopy (IMPS) and derive the associated impulse response function, the transient photocurrent (TPC), in response to a short light pulse. Similarly, we determine the transient photovoltage (TPV) starting from the intensity-modulated photovoltage spectroscopy (IMVS) transfer function. We also discuss the open-circuit voltage decays (OCVD). We first show the response of simple equivalent circuit models, and then we treat the full model for generation-diffusion-recombination of electrons that shows a spiraling loop in IMPS. This model gives rise to overshoots in the time domain.

Analysis of the Oxygen Passivation Effects on MAPbI3 and MAPbBr3 in Fresh and Aged Solar Cells by the Transient Photovoltage Technique

Previous studies have revealed that for some perovskite compositions, power conversion efficiencies (PCEs) improved after storing the devices in different ambient conditions. With the aim of better understanding such improvements, we focus our attention on the carrier/ionic dynamic kinetics of fresh and aged PSCs with different perovskite compositions (MAPbI₃ and MAPbBr₃ ) and using spiro-OMeTAD as HTM. For that, we use transient photovoltage (TPV), a technique used to analyse the different recombination kinetics at equilibrium and at different illumination times. We observe that the aging treatment causes significant changes on the kinetics behaviour for bromide-based devices, resulting in a positive influence on the cell performance (from 3.5 % to 6.1 % PCE, in reverse scan). However, the kinetics for those iodide-based perovskite solar cells remains unchangeable (from 16.3 % to 15.0 % PCE, in reverse scan).

Selective area grown AlInGaN nanowire arrays with core-shell structures for photovoltaics on silicon

To pave the way for InGaN-on-Si integrated photovoltaics, uniform and close-packed n-GaN/(Al)InGaN/p-GaN nanowire (NW) arrays with a ∼0.29 μm thick absorption segment of ∼2.35 eV energy bandgap were fabricated on a Si substrate using Ti-mask selective area growth (SAG) in a molecular beam epitaxy (MBE) chamber. Instead of using thick and insulting buffer layers, this SAG process was realized by employing a 3 nm AlN/GaN: Ge buffer layer to facilitate electrical and thermal conduction between NWs and Si. Scanning transmission electron microscopy and high-resolution electron energy loss spectroscopy mapping revealed the discontinuities of AlN and the embedments of GaN:Ge which contribute to a negligible resistance of the NWs-on-Si interface. AlInGaN active segment exhibits core-shell structures, which suppress nonradiative surface recombination at NW surfaces. Working of AlInGaN core-shell NW solar cells was demonstrated with improved open-circuit voltage (Voc) and higher energy conversion efficiency (η) than those reported for InGaN NW solar cells. Stable output characteristics including the Voc of 1.41 V and η of 2.46% were obtained under 30-Sun illuminations. Such NWs-on-Si devices use Si substrate as the bottom electrode. With a low series resistance of ∼1 Ω, this work paves the way to monolithically integrate MBE-SAG III-nitride devices and Si-based electronics, such as Si solar cells and CMOS devices.

Recent Progress of Inverted Perovskite Solar Cells with a Modified PEDOT:PSS Hole Transport Layer

Organic-inorganic hybrid perovskite solar cells (PSCs) has achieved the power conversion efficiency (PCE) of 25.2% in the last 10 years, and the PCE of inverted PSCs has reached >22%. The rapid enhancement has partly benefited from the employment of suitable hole transport layers. Especially, poly(3,4-ethenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most widely used polymer hole transport materials in inverted PSCs, because of its high optical transparency in the visible region and low-temperature processing condition. However, the PCE and stability of PSCs based on pristine PEDOT:PSS are far from satisfactory, which are ascribed to low fitness between PEDOT:PSS and perovskite materials, in terms of work function, conductivity, film growth, and hydrophobicity. This paper summaries recent progress regarding to modifying/remedy the drawbacks of PEDOT:PSS to improve the PCE and stability. The systematically understanding of the mechanism of modified PEDOT:PSS and various characteristic methods are summarized here. This Review has the potential to guide the development of PSCs based on commercial PEDOT:PSS.