CuInS2-Sensitized Quantum Dot Solar Cell. Electrophoretic Deposition, Excited-State Dynamics, and Photovoltaic Performance

Rigid CuInS2/ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes

CuInS2 (CIS) quantum dots (QDs) represent an important class of colloidal materials with broad application potential, owing to their low toxicity and unique optical properties. Although coating with a ZnS shell has been identified as a crucial method to enhance optical performance, the occurrence of cation exchange has historically resulted in the unintended formation of Cu-In-Zn-S alloyed QDs, causing detrimental blueshifts in both absorption and photoluminescence (PL) spectral profiles. In this study, we present a facile one-pot synthetic strategy aimed at impeding the cation exchange process and promoting ZnS shell growth on CIS core QDs. The suppression of both electron-phonon interaction and Auger recombination by the rigid ZnS shell results in CIS/ZnS core/shell QDs that exhibit a wide near-infrared (NIR) emission coverage and a remarkable PL quantum yield of 92.1%. This effect boosts the fabrication of high-performance, QD-based NIR light-emitting diodes with the best stability of such materials so far.

Eco-Friendly Electrophoretic Deposition of Fluorescent Nanocomposite Films in an Aqueous Dispersion of Hydrophilized Core/Shell CuInS2/ZnS Quantum Dots for Optoelectronic Applications

Low-toxic and efficient fluorescent core-shell CuInS2/ZnS (CIS/ZnS) quantum dots (QDs) are good candidates for optoelectronic device applications. They are synthesized in a hydrophobic environment, while large amounts of organic solvents used in the preparation of fluorescent films have significant problems on environmental load and human health. CIS/ZnS QDs hydrophilized by adsorbing 3-mercaptopropionic acid on their surfaces can be used in the aqueous film fabrication process. In this work, the aqueous electrophoretic deposition (EPD) of the hydrophilized QDs with silicone-modified acrylic resin nanoparticles was performed to fabricate fluorescent nanocomposite films. The hydrophilized QDs and resin nanoparticles were simultaneously dispersed in basic aqueous solutions due to electrostatic repulsion resulting from their negatively charged surfaces. Transparent films were obtained on a transparent conductive substrate at the anode side by the EPD. They showed yellow fluorescence of the QDs. The thickness increased with increasing the deposition time; however, hemispherical holes attributed to oxygen gas generated by water electrolysis were observed at the longer time. The electron microscopy revealed that the films were densely and homogeneously deposited. The QDs were dispersed around the resin nanoparticles without aggregation. The fluorescence (FL) quantum yield was 43%. The optical absorption peak and FL intensity of the QDs increased accompanied by the film growth. The nanocomposite film showed good heat resistance at 80-120 °C for 5 h; therefore, the prepared films have feasibility in white light-emitting diode (LED) applications. A lightening device structured with the obtained EPD film placed on a blue LED successfully emitted white light. In addition, the flexibility of the nanocomposite film was demonstrated. The aqueous EPD method would be one of the suitable methods for the industrial production of fluorescent QD films. This technique can be applied to other hydrophilic fluorescent QDs with charged surfaces. Realization of various fluorescent QD films would expand the application possibilities.

Photoexcited Carrier Transfer in CuInS2 Nanocrystal Assembly by Suppressing Resonant-Energy Transfer

High-density assemblies or superlattice structures composed of colloidal semiconductor nanocrystals have attracted attention as key materials for next-generation photoelectric conversion devices such as quantum-dot solar cells. In these nanocrystal solids, unique transport and optical phenomena occur due to quantum coupling of localized energy states, charge-carrier hopping, and electromagnetic interactions among closely arranged nanocrystals. In particular, the photoexcited carrier dynamics in nanocrystal solids is important because it significantly affects various device parameters. In this study, we report the photoexcited carrier dynamics in a solid film of CuInS2 nanocrystals, which is one of the potential nontoxic substitutes with Cd- and Pb-free compositions. Meanwhile, these subjects have been extensively studied in nanocrystal solids formed by CdSe and PbS systems. A carrier-hopping mechanism was confirmed using temperature-dependent photoluminescence spectroscopy, which yielded a typical value of the photoexcited carrier-transfer rate of (2.2±0.6)×107  s-1 by suppressing the influence of the excitation-energy transfer.

Marcus Theory and Tunneling Method for the Electron Transfer Rate Analysis in Quantum Dot Sensitized Solar Cells in the Presence of Blocking Layer

In this research study, the effects of different parameters on the electron transfer rate from three quantum dots (QDs), CdSe, CdS, and CdTe, on three metal oxides (MOs), TiO2, SnO2, and SnO2, in quantum-dot-sensitized solar cells (QDSSCs) with porous structures in the presence of four types of blocking layers, ZnS, ZnO, TiO2, and Al2O3, are modeled and simulated using the Marcus theory and tunneling between two spheres for the first time. Here, the studied parameters include the change in the type and thickness of the blocking layer, the diameter of the QD, and the temperature effect. To model the effect of the blocking layer on the QD, the effective sphere method is used, and by applying it into the Marcus theory equation and the tunneling method, the electron transfer rate is calculated and analyzed. The obtained results in a wide range of temperatures of 250-400 °K demonstrate that, based on the composition of the MO-QD, the increase in the temperature could reduce or increase the electron transfer rate, and the change in the QD diameter could exacerbate the effects of the temperature. In addition, the results show which type and thickness of the blocking layer can achieve the highest electron transfer rate. In order to test the accuracy of the simulation method, we calculate the electron transfer rate in the presence of a blocking layer for a reported sample of a QDSSC manufacturing work, which was obtained with an error of ~3%. The results can be used to better interpret the experimental observations and to assist with the design and selection of the appropriate combination of MO-QD in the presence of a blocking layer effect.

Near-infrared photoactive Ag-Zn-Ga-S-Se quantum dots for high-performance quantum dot-sensitized solar cells

The high light-harvesting ability of quantum dots (QDs) plays an eminent role in the performance of solar cells. In this study, we synthesized Ag-Zn-Ga-S-Se-based alloyed QDs by colloidal hot injection and characterized them. The X-ray photoelectron spectrum analysis confirms the +1, +2, +3, -2, and -2 oxidation states of, respectively, Ag, Zn, Ga, S, and Se in the QDs, and the energy-dispersive X-ray spectrum analysis confirms the 1:1:1:1.5:1.5 stoichiometric ratio of, respectively, Ag, Zn, Ga, S, and Se. These two results indicate the formation of I-II-III-VI₃-type alloyed crystals (AgZnGaS_1.5Se_1.5 nanocrystals). TEM image analysis reveals the QD nature of the synthesized Ag-Zn-Ga-S-Se nanocrystals. The X-ray diffraction pattern confirms the hexagonal structure. Due to the near-infrared light absorption capability, the synthesized QDs were used as the sensitizer to fabricate QDSCs. The fabricated QDSCs were characterized by using electrochemical impedance spectroscopy and photovoltaic performance studies. The fabricated QDSC have superior electrochemical activity with a photoconversion efficiency of 4.91%.

Managing Photoinduced Electron Transfer in AgInS2-CdS Heterostructures

Ternary semiconductors such as AgInS2 with their interesting photocatalytic properties can serve as building blocks to design light harvesting assemblies. The intraband transitions created by the metal ions extend the absorption well beyond the bandgap transition. The interfacial electron transfer of AgInS2 with surface bound ethyl viologen under bandgap and sub band gap irradiation as probed by steady state photolysis and transient absorption spectroscopy offers new insights into the participation of conduction band and trapped electrons. Capping AgInS2 with CdS shifts emission maximum to the blue and increases the emission yield as the surface defects are remediated. CdS capping also promotes charge separation as evident from the efficiency of electron transfer to ethyl viologen, which increased from 14% to 29%. The transient absorption measurements which elucidate the kinetic aspects of electron transfer processes in AgInS2 and CdS capped AgInS2 are presented. The improved performance of CdS capped AgInS2 offers new opportunities to employ them as photocatalysts.

Phase-Controlled Synthesis and Quasi-Static Dielectric Resonances in Silver Iron Sulfide (AgFeS2 ) Nanocrystals

Ternary metal-chalcogenide semiconductor nanocrystals are an attractive class of materials due to their tunable optoelectronic properties that result from a wide range of compositional flexibility and structural diversity. Here, the phase-controlled synthesis of colloidal silver iron sulfide (AgFeS₂ ) nanocrystals is reported and their resonant light-matter interactions are investigated. The product composition can be shifted selectively from tetragonal to orthorhombic by simply adjusting the coordinating ligand concentration, while keeping the other reaction parameters unchanged. The results show that excess ligands impact precursor reactivity, and consequently the nanocrystal growth rate, thus deterministically dictating the resulting crystal structure. Moreover, it is demonstrated that the strong ultraviolet-visible extinction peak exhibited by AgFeS₂ nanocrystals is a consequence of a quasi-static dielectric resonance (DR), analogous to the optical response observed in CuFeS₂ nanocrystals. Spectroscopic studies and computational calculations confirm that a negative permittivity at ultraviolet/visible frequencies arises due to the electronic structure of these intermediate-band (IB) semiconductor nanocrystals, resulting in a DR consisting of resonant valence-band-to-intermediate-band excitations, as opposed to the well-known localized surface plasmon resonance response typically observed in metallic nanostructures. Overall, these results expand the current library of an underexplored class of IB semiconductors with unique optical properties, and also enrich the understanding of DRs in ternary metal-iron-sulfide nanomaterials.

Zn-Cu-In-S-Se Quinary "Green" Alloyed Quantum-Dot-Sensitized Solar Cells with a Certified Efficiency of 14.4

The photoelectronic properties of quantum dots (QDs) have a critical impact on the performance of quantum-dot-sensitized solar cells (QDSCs). Currently, I-III-VI group QDs have become the mainstream light-harvesting materials in high-performance QDSCs. However, it is still a great challenge to achieve satisfactory efficiency for light-harvesting, charge extraction, and charge collection simultaneously in QDSCs. We design and prepare Zn_0.4 Cu_0.7 In_1.0 S_x Se_2-x (ZCISSe) quinary alloyed QDs by cation/anion co-alloying strategy. The critical photoelectronic properties of target QDs, including band gap, conduction band energy level, and density of defect trap states, can be conveniently tailored. Experimental results demonstrate that the ZCISSe quinary alloyed QDs can achieve an ideal balance among light-harvesting, photogenerated electron extraction, and charge-collection efficiencies in QDSCs compared to its single anion or cation quaternary alloyed QD counterparts. Consequently, the quinary alloyed QDs boost the certified efficiency of QDSCs to 14.4 %, which is a new efficiency record for liquid-junction QD solar cells.

An effective photocatalytic hydrogen evolution strategy based on tunable band gap (CuIn)xZn2(1−x)S2 combined with amorphous molybdenum sulfide

The combination of crystalline band-tunable (CuIn)_xZn_2(1−x)S₂ and amorphous a-MoS_x provides a good strategy for photocatalysts.

Recent research on the luminous mechanism, synthetic strategies, and applications of CuInS2 quantum dots

We discuss the synthesis and luminescence mechanisms of CuInS₂ QDs, the strategies to improve their luminous performance and their potential application in light-emitting devices, solar energy conversion, and the biomedical field.

Electrostatically Driven Resonance Energy Transfer in an All-Quantum Dot Based Donor-Acceptor System

Demonstration of fundamental photophysical properties in environmentally friendly quantum dots (QDs) is essential to realize their practical use in various light harvesting applications. We accomplish here an efficient light induced resonance energy transfer in all-QD based donor-acceptor system in water, deprived of any commonly used organic dye component. Our nanohybrid system comprises surface engineered indium phosphide/zinc sulfide (InP/ZnS) QD as the donor, and copper indium sulfide/zinc sulfide (CIS/ZnS) QD as the acceptor. The electrostatic attraction between oppositely charged QDs is vital in achieving a strong ground state complexation in the [-] InP/ZnS:::[+] CIS/ZnS QD nanohybrid. A nonlinear Stern-Volmer plot confirms the involvement of both static and dynamic components in the PL quenching of InP/ZnS QD by CIS/ZnS QD. Moreover, a temporal evolution of resonance energy transfer is realized in the solid state as well, which can improve the potential of such "all-green QD" based nanohybrid systems for device level studies.

Wavefunction engineering for efficient photoinduced-electron transfer in CuInS2 quantum dot-sensitized solar cells

The high efficiency of quantum dot-sensitized solar cells (QDSSCs) is a benefit of the highly efficient photoinduced-electron transfer (PET) to external electrodes. Here, we investigated how the surface defects and conduction-band (CB) offsets between core and shell materials affect the PET from CuInS₂ quantum dots (QDs) by means of time-resolved femtosecond transient absorption and nanosecond photoluminescence spectroscopy. The transfer of 1S excited electrons from CuInS₂ QDs to TiO₂ films is demonstrated and we find that the surface-electron trapping can significantly reduce the efficiency of the PET. Though the electron trapping can be suppressed after ZnS surface passivation, the PET decreases significantly to a low efficiency of ∼33% from the type I CuInS₂/ZnS core/shell QDs because of their low electron density at the surface of the QDs. The surface-electron density is increased with the strategy of wavefunction engineering by reducing the CB offset, which allows us to achieve a quasi-type II carrier confinement in CuInS₂/CdS core/shell QDs. The PET efficiency appears to be as high as ∼95% from the CuInS₂/CdS core/shell QDs, which is ascribed to synergistic effects of the surface passivation and enhanced delocalization of the electron wavefunction from the CuInS₂ core to the CdS shell. Finally, we demonstrate that these new mechanistic understandings of the PET processes are crucial to improving the efficiency of CuInS₂ QDSSCs.

Influence of a bifunctional linker on the loading of Cu2AgInS4 QDs onto porous TiO2 NFs to use as an efficient photoanode to boost the photoconversion efficiency of QDSCs

Quaternary Cu₂AgInS₄ quantum dots anchored more onto porous TiO₂ NFs through a linker, 3-mercaptopropionic acid exhibits higher photoconversion efficiency of QDSC than that of the same anchored without a linker.

Al/Zn co-incorporated Cu–In–Se quantum dots for high efficiency quantum dot sensitized solar cells

A facile method for synthesizing high-quality Cu–In–Se quantum dots (QDs) was developed by Al/Zn co-incorporation. Benefiting from the reduction of trap-state defects in QDs, the efficiency of solar cells basing prepared QDs is obviously improved.

Electrophoretic Deposition of Quantum Dots and Characterisation of Composites

Electrophoretic deposition (EPD) is an emerging technique in nanomaterial-based device fabrication. Here, we report an in-depth study of this approach as a means to deposit colloidal quantum dots (CQDs), in a range of solvents. For the first time, we report the significant improvement of EPD performance via the use of dichloromethane (DCM) for deposition of CQDs, producing a corresponding CQD-TiO₂ composite with a near 10-fold increase in quantum dot loading relative to more commonly used solvents such as chloroform or toluene. We propose this effect is due to the higher dielectric constant of the solvent relative to more commonly used and therefore the stronger effect of EPD in this medium, though there remains the possibility that changes in zeta potential may also play an important role. In addition, this solvent choice enables the true universality of QD EPD to be demonstrated, via the sensitization of porous TiO₂ electrodes with a range of ligand capped CdSe QDs and a range of group II-VI CQDs including CdS, CdSe/CdS, CdS/CdSe and CdTe/CdSe, and group IV-VI PbS QDs.

Boosting the Performance of Environmentally Friendly Quantum Dot-Sensitized Solar Cells over 13% Efficiency by Dual Sensitizers with Cascade Energy Structure

Generally, high light-harvesting efficiency, electron-injection efficiency, and charge-collection efficiency are the prerequisites for high-efficiency quantum-dot-sensitized solar cells (QDSCs). However, it is fairly difficult for a single QD sensitizer to meet these three requirements simultaneously. It is demonstrated that these parameters can be felicitously balanced by a cosensitization strategy through the adoption of environmental-friendly Zn-Cu-In-Se and Zn-Cu-In-S dual QD sensitizers with cascade energy structure. Experimental results indicate that: i) the combination of the dual QDs can improve the light-harvesting capability of the cells, especially in the visible light window; ii) the cosensitization approach can facilitate electron injection, benefitting from the cascade energy structure of the two QD sensitizers employed; iii) the charge-collection efficiency can be remarkably enhanced by the suppressed charge-recombination process due to the improved QD coverage on TiO₂ . Consequently, this cosensitization strategy delivers a new certified efficiency record of 12.98% for liquid-junction QDSCs under AM 1.5G 1 sun irradiation. Moreover, the constructed cells exhibit good stability in a high-humidity environment.

ZnSxSe1-x Alloy Passivation Layer for High-Efficiency Quantum-Dot-Sensitized Solar Cells

Interface modification is an important means for improving the performance of almost all optoelectronic devices. In quantum-dot-sensitized solar cells (QDSCs), effective surface modification of photoanode also has a critical impact on photovoltaic performance. At present, ZnS and ZnSe wide band gap semiconductors are the mainstream materials used for photoanode/electrolyte interface passivation in QDSCs. However, the problem with these two materials is that the passivation effect and the lattice match with TiO₂/QD are difficult to be balanced. Although ZnS can form a larger energetic barrier due to the higher conduction band edge, its lattice mismatch with TiO₂ and QD (such as CdSe and CuInSe₂) is large, leading to the formation of additional defect states. On the contrary, ZnSe has a small lattice mismatch with TiO₂ and QD but a relatively lower conduction band edge. Herein, we propose a strategy to employ ZnS_xSe_1-x alloy materials as a passivation layer for the first time to solve the drawbacks of single-component passivation layers. The ZnS_xSe_1-x alloy passivation layer was deposited on the Zn-Cu-In-Se (ZCISe) QD-sensitized TiO₂ film electrode via successive ionic layer adsorption and reaction (SILAR) method. A stable polyselenosulfide/sulfide mixed anions were served as anion precursor for the formation of ZnS_xSe_1-x alloy passivation layer. Experimental results revealed that the alloy passivation layer is more favorable for the suppression of charge recombination at the photoanode/electrolyte interface. In addition, the ZnS_xSe_1-x alloy passivation layer can significantly improve the photogenerated electron extraction efficiency compared to the current classical ZnS passivation layer as confirmed by the transient absorption (TA) measurement. Consequently, the average efficiency of QDSCs was improved from 12.17 to 13.08% with the replacement of traditional ZnS passivation layer by ZnSSe-10 under AM 1.5G one full sun illumination.

Dual function of molybdenum sulfide/C-cloth in enhancing the performance of fullerene nanosheets based solar cell and supercapacitor

Quantum dot solar cells (QDSCs) with hexagonal fullerene nanosheets (C60-NS) embedded in a titanium oxide/cadmium sulfide (TiO2/CdS) photoanode coupled with a carbon-cloth (C-cloth) coated with molybdenum sulfide (MoS2) counter electrode (CE) are studied for the first time. C60-NS due to a favorable work function of 4.57 eV and a conductance of 1.44 μS, enable faster electron injection from the conduction band of cadmium sulfide to the current collector, in contrast to the bulk fullerene based TiO2/CdS solar cell. The champion cell with the TiO2/C60-NS/CdS photoanode and a MoS2/C-cloth CE exhibits a high power conversion efficiency of 5.6%, greater by ∼14% relative to its' analogue cell with bulk fullerene. A large area cell of 1 cm2 dimensions with TiO2/C60-NS/CdS gives a PCE of 2.9%. The effect of MoS2 in improving the efficiency of the cell with a TiO2/C60-NS/CdS photoanode is realized in terms of enhanced electrocatalytic activity for polysulfide reduction, and lower charge transfer resistance at the polysulfide/CE interface compared to a cell with the same photoanode but having pristine carbon-cloth as the CE. The ability of MoS2 for catalyzing the oxidized polysulfide species at the CE and C60-NS for improving the charge collection at the photoanode serve as indicators for their wider utilization in solar cells. It also serves as a good supercapacitor material. A MoS2/C-cloth based symmetric cell exhibits a specific capacitance of 645 F g-1 at 2 A g-1, which shows its' potential for energy storage as well. By integrating the QDSC and the supercapacitor, the resulting integrated device acquires a photovoltage of 0.7 V, under 1 sun illumination.

Solar light harvesting with multinary metal chalcogenide nanocrystals

The paper reviews the state of the art in the synthesis of multinary (ternary, quaternary and more complex) metal chalcogenide nanocrystals (NCs) and their applications as a light absorbing or an auxiliary component of light-harvesting systems. This includes solid-state and liquid-junction solar cells and photocatalytic/photoelectrochemical systems designed for the conversion of solar light into the electric current or the accumulation of solar energy in the form of products of various chemical reactions. The review discusses general aspects of the light absorption and photophysical properties of multinary metal chalcogenide NCs, the modern state of the synthetic strategies applied to produce the multinary metal chalcogenide NCs and related nanoheterostructures, and recent achievements in the metal chalcogenide NC-based solar cells and the photocatalytic/photoelectrochemical systems. The review is concluded by an outlook with a critical discussion of the most promising ways and challenging aspects of further progress in the metal chalcogenide NC-based solar photovoltaics and photochemistry.

From Large-Scale Synthesis to Lighting Device Applications of Ternary I-III-VI Semiconductor Nanocrystals: Inspiring Greener Material Emitters

Quantum dots with fabulous size-dependent and color-tunable emissions remained as one of the most exciting inventories in nanomaterials for the last 3 decades. Even though a large number of such dot nanocrystals were developed, CdSe still remained as unbeatable and highly trusted lighting nanocrystals. Beyond these, the ternary I-III-VI family of nanocrystals emerged as the most widely accepted greener materials with efficient emissions tunable in visible as well as NIR spectral windows. These bring the high possibility of their implementation as lighting materials acceptable to the community and also to the environment. Keeping these in mind, in this Perspective, the latest developments of ternary I-III-VI nanocrystals from their large-scale synthesis to device applications are presented. Incorporating ZnS, tuning the composition, mixing with other nanocrystals, and doping with Mn ions, light-emitting devices of single color as well as for generating white light emissions are also discussed. In addition, the future prospects of these materials in lighting applications are also proposed.

Quantum dot-sensitized solar cells

A comprehensive overview of the development of quantum dot-sensitized solar cells (QDSCs) is presented.

Synthesis and characterization of AgGaS2 nanoparticles: a study of growth and fluorescence

Silver gallium sulfide nanocrystals demonstrate tunability for trap-state emission (650 nm) or band gap fluorescence (460 nm).

Effective bandgap narrowing of Cu–In–Zn–S quantum dots for photocatalytic H2 production via cocatalyst-alleviated charge recombination

Effective bandgap narrowing of Cu–In–Zn–S quantum dots is achieved with increased tolerance of Cu from the cocatalyst-alleviated charge recombination.

AgInS2-ZnS Quantum Dots: Excited State Interactions with TiO2 and Photovoltaic Performance

Multinary quantum dots such as AgInS₂ and alloyed AgInS₂-ZnS are an emerging class of semiconductor materials for applications in photovoltaic and display devices. The nanocrystals of (AgInS₂)_x-(ZnS)_1-x (for x = 0.67) exhibit a broad emission with a maximum at 623 nm and interact strongly with TiO₂ nanostructures by injecting electrons from the excited state. The electron transfer rate constant as determined from transient absorption spectroscopy was 1.8 × 10¹⁰ s^-1. The photovoltaic performance was evaluated over a period of a few weeks to demonstrate the stability of AgInS₂-ZnS when utilized as sensitizers in solar cells. We report a power conversion efficiency of 2.25% of our champion cell 1 month after its fabrication. The limitations of AgInS₂-ZnS nanocrystals in achieving greater solar cell efficiency are discussed.

Functionalized Molybdenum Disulfide Nanosheets for 0D-2D Hybrid Nanostructures: Photoinduced Charge Transfer and Enhanced Photoresponse

The high-concentration stable dispersion of free-standing mono- or few-layer transition metal dichalcogenide (TMD) nanosheets (NSs) remains a significant barrier for their application in solution-processed optoelectronic devices. Here, we report oleylamine (OLA)- and dodecanethiol (DDT)-assisted exfoliation of MoS₂ NSs in nonpolar organic solvent 1,2-dichlorobenzene (DCB), which enables high-concentration stable dispersion of free-standing mono- or few-layer NSs. The functionalized MoS₂ NSs were further utilized for the fabrication of solution-processed 0D-2D hybrids of CuInS₂ quantum dots (CIS QDs) and MoS₂ NSs. The strong photoluminescence (PL) quenching and decreased PL lifetimes of CIS QDs attached to MoS₂ NSs indicates efficient charge transfer from photoexcited CIS to MoS₂ NSs. The photocurrent of CIS/MoS₂ hybrid devices is dramatically enhanced compared to that of pure CIS and pristine MoS₂-based devices, confirming that efficient charge separation and transfer occur from CIS QDs to MoS₂ NSs.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells

I-III-VI₂ group "green" quantum dots (QDs) are attracting increasing attention in photoelectronic conversion applications. Herein, on the basis of the "simultaneous nucleation and growth" approach, Cu-In-Ga-Se (CIGSe) QDs with light harvesting range of about 1000 nm were synthesized and used as sensitizer to construct quantum dot sensitized solar cells (QDSCs). Inductively coupled plasma atomic emission spectrometry (ICP-AES), wild-angle X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses demonstrate that the Ga element was alloyed in the Cu-In-Se (CISe) host. Ultraviolet photoelectron spectroscopy (UPS) and femtosecond (fs) resolution transient absorption (TA) measurement results indicate that the alloying strategy could optimize the electronic structure in the obtained CIGSe QD material, thus matching well with TiO₂ substrate and favoring the photogenerated electron extraction. Open circuit voltage decay (OCVD) and impedance spectroscopy (IS) tests indicate that the intrinsic recombination in CIGSe QDSCs was well suppressed relative to that in CISe QDSCs. As a result, CIGSe based QDSCs with use of titanium mesh supported mesoporous carbon counter electrode exhibited a champion efficiency of 11.49% (J_sc = 25.01 mA/cm², V_oc = 0.740 V, FF = 0.621) under the irradiation of full one sun in comparison with 9.46% for CISe QDSCs.

Emerging of Inorganic Hole Transporting Materials For Perovskite Solar Cells

Hole transporting material (HTM) is a significant component to achieve the high performance perovskite solar cells (PSCs). Over the years, inorganic, organic and hybrid (organic-inorganic) material based HTMs have been developed and investigated successfully. Today, perovskite solar cells achieved the efficiency of 22.1 % with with 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine) 9,9-spirobifluorene (spiro-OMeTAD) as HTM. Nevertheless, synthesis and cost of organic HTMs is a major challenging issue and therefore alternative materials are required. From the past few years, inorganic HTMs showed large improvement in power conversion efficiency (PCE) and stability. Recently CuO_x reached the PCE of 19.0% with better stability. These developments affirms that inorganic HTMs are better alternativesto the organic HTMs for next generation PSCs. In this report, we mainly focussed on the recent advances of inorganic and hybrid HTMs for PSCs and highlighted the efficiency and stability of PSCs improved by changing metal oxides as HTMs. Consequently, we expect that energy levels of these inorganic HTMs matches very well with the valence band of perovskites and improved efficiency helps in future practical deployment of low cost PSCs.

Assembly of CdS nanoparticles on boron and fluoride co-doped TiO2 nanofilm for solar energy conversion applications

Boron and fluoride co-doped TiO₂ nanomaterial is successfully synthetized using a facile process, followed by chemical bath deposition in an organic solution to ensure high wettability and superior penetration ability of the B/F co-doped TiO₂ films.

Zinc dopant inspired enhancement of electron injection for CuInS2quantum dot-sensitized solar cells

The PCE of doped CuInS₂QDSCs increased from 5.21% to 5.90%, due to broadened optoelectronic response range and accelerated electron injection.

Optimizing photovoltaic performance in CuInS2 and CdS quantum dot-sensitized solar cells by using an agar-based gel polymer electrolyte

Quantum dot-sensitized solar cells (QDSSCs) offer new opportunities to address the clean energy challenge, being one of the top candidates for third generation photovoltaics.