High frequency scanning gate microscopy and local memory effect of carbon nanotube transistors

Impedimetric phosphorene field-effect transistors for rapid detection of lead ions

Stimuli-responsive field-effect transistors (FETs) based on 2D nanomaterials have been considered as attractive candidates for sensing applications due to their rapid response, high sensitivity, and real-time monitoring capabilities. Here we report on an impedance spectroscopy technique for FET sensor applications with ultra-high sensitivity and good reproducibility. An alumina-gated FET, using an ultra-thin black phosphorus flake as the channel material, shows significantly improved stability and ultra-high sensitivity to lead ions in water. In addition, the phase angle in the low frequency region was found to change significantly in the presence of lead ion solutions, whereas it was almost unchanged in the high frequency region. The dominant sensing performance was found at low frequency phase spectrum around 50 Hz and a systematic change in the phase angle in different lead ion concentrations was found. Applying the impedance spectroscopy technique to insulator-gated FET sensors could open a new avenue for real-world sensor applications.

One-Dimensional Poole-Frenkel Conduction in the Single Defect Limit

A single point defect surrounded on either side by quasi-ballistic, semimetallic carbon nanotube is a nearly ideal system for investigating disorder in one-dimensional (1D) conductors and comparing experiment to theory. Here, individual single-walled nanotubes (SWNTs) are investigated before and after the incorporation of single point defects. Transport and local Kelvin Probe force microscopy independently demonstrate high-resistance depletion regions over 1.0 μm wide surrounding one point defect in semimetallic SWNTs. Transport measurements show that conductance through such wide depletion regions occurs via a modified, 1D version of Poole-Frenkel field-assisted emission. Given the breadth of theory dedicated to the possible effects of disorder in 1D systems, it is surprising that a Poole-Frenkel mechanism appears to describe defect scattering and resistance in this semimetallic system.

Scanning gate spectroscopy and its application to carbon nanotube defects

A variation of scanning gate microscopy (SGM) is demonstrated in which this imaging mode is extended into an electrostatic spectroscopy. Continuous variation of the SGM probe's electrostatic potential is used to directly resolve the energy spectrum of localized electronic scattering in functioning, molecular scale devices. The technique is applied to the energy-dependent carrier scattering that occurs at defect sites in carbon nanotube transistors, and fitting energy-resolved experimental data to a simple transmission model determines the electronic character of each defect site. For example, a phenolic type of covalent defect is revealed to produce a tunnel barrier 0.1 eV high and 0.5 nm wide.

Local inhomogeneity in gate hysteresis of carbon nanotube field-effect transistors investigated by scanning gate microscopy

Local nature of gate hysteresis in a carbon nanotube field-effect transistor (CNFET) was studied using scanning gate microscopy (SGM). A sequential set of SGM images of the CNFET fabricated on a SiO(2)/Si substrate was obtained at a low temperature under an ultra-high vacuum. Comparisons of the SGM images obtained at decreasing and increasing gate voltage steps revealed that the order of appearance of SGM defects could not be accounted for by a uniform distribution of hysteretic gate screening along the carbon nanotube (CNT) channel. It was concluded that the gate hysteresis in the CNFET had substantial local variations along the CNT. The local inhomogeneity in gate hysteresis was attributed to inhomogeneous distribution of screening charge traps or sources on the SiO(2) surface.

Photon-assisted tunneling in a carbon nanotube quantum dot

We report on photon-assisted tunneling (PAT) experiments in a carbon nanotube quantum dot using microwave frequencies between 20 and 60 GHz. In addition to the basic PAT effect, revealed by the appearance of two extra resonances in the current through the dot, we use PAT for spectroscopy of excited states. The experimental data are in good agreement with simulations.

Fabrication and electrical characterization of circuits based on individual tin oxide nanowires

Two- and four-probe electrical measurements on individual tin oxide (SnO(2)) nanowires were performed to evaluate their conductivity and contact resistance. Electrical contacts between the nanowires and the microelectrodes were achieved with the help of an electron- and ion-beam-assisted direct-write nanolithography process. High contact resistance values and the nonlinear current-bias (I-V) characteristics of some of these devices observed in two-probe measurements can be explained by the existence of back-to-back Schottky barriers arising from the platinum-nanowire contacts. The nanoscale devices described herein were characterized using impedance spectroscopy, enabling the development of an equivalent circuit. The proposed methodology of nanocontacting and measurements can be easily applied to other nanowires and nanometre-sized materials.

Scanned gate microscopy of a one-dimensional quantum dot

We analyze electrostatic interaction between a sharp conducting tip and a thin one-dimensional wire, e.g., a carbon nanotube, in a scanned gate microscopy (SGM) experiment. The problem is analytically tractable if the wire resides on a thin dielectric substrate above a metallic backgate. The characteristic spatial scale of the electrostatic coupling to the tip is equal to its height above the substrate. Numerical simulations indicate that imaging of individual electrons by SGM is possible once the mean electron separation exceeds this scale (typically, a few tens of nm). Differences between weakly and strongly invasive SGM regimes are pointed out.