Epitaxial graphene on Cu(111)

Structure of Graphene Grown on Cu(111): X-Ray Standing Wave Measurement and Density Functional Theory Prediction

We report the quantitative adsorption structure of pristine graphene on Cu(111) determined using the normal incidence x-ray standing wave technique. The experiments constitute an important benchmark reference for the development of density functional theory approximations able to capture long-range dispersion interactions. Electronic structure calculations based on many-body dispersion-inclusive density functional theory are able to accurately predict the absolute measure and variation of adsorption height when the coexistence of multiple moiré superstructures is considered. This provides a structural model consistent with scanning probe microscopy results.

Unzipping Carbon Nanotubes to Sub-5-nm Graphene Nanoribbons on Cu(111) by Surface Catalysis

Graphene nanoribbons (GNRs) are promising in nanoelectronics for their quasi-1D structures with tunable bandgaps. The methods for controllable fabrication of high-quality GNRs are still limited. Here a way to generate sub-5-nm GNRs by annealing single-walled carbon nanotubes (SWCNTs) on Cu(111) is demonstrated. The structural evolution process is characterized by low-temperature scanning tunneling microscopy. Substrate-dependent measurements on Au(111) and Ru(0001) reveal that the intermediate strong SWCNT-surface interaction plays a pivotal role in the formation of GNRs.

Designing 2D stripe winding network through crown-ether intermediate Ullmann coupling on Cu(111) surface

Chemical synthesis typically yields the most thermodynamically stable ordered arrangement, a principle also governing surface synthesis on an atomically level two-dimensional (2D) surface, fostering the creation of structured 2D formations. The linear connection arising from energetically stable chemical bonding precludes the generation of a 2D random network comprised of one-dimensional (1D) convoluted stripes through on-surface synthesis. Nonetheless, we underscored that on-surface synthesis possesses the capability not solely to fashion a 2D ordered linear network but also to fabricate a winding 2D network employing a precursor with a soft ring and intermediate state bonding within the Ullmann reaction. Here, on-surface synthesis was exhibited on Cu(111) employing a 2D self-assembled monolayer array of 4,4',5,5'-tetrabromodibenzo[18]crown-6 ether (BrCR) precursors. These precursors were purposefully structured, with a crown ether ring at the core and Br atoms positioned at the head and tail ends, facilitating preferential connections along the elongated axis to foster a 1D stripe configuration. We illustrate how adjustments in the quantities of the intermediate state, serving as a primary linkage, can yield a labyrinthine, convoluted winding 2D network of stripes. The progression of growth, underlying mechanisms, and electronic structures were scrutinized using an ultrahigh vacuum low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) setup combined with density functional theory (DFT) calculations. This experimental evidence opens a novel functionality in leveraging on-surface synthesis for the formation of a 2D random network. This discovery holds promise as a pioneering constituent in the construction of a ring host supramolecule, augmenting its capability to ensnare guest atoms, molecules, or ions.

Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)

Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties of graphene and perform large-scale graphene mapping. By comparing THz emission properties from monolayer graphene on different types of silicon substrates, including those treated with buffered oxide etches, we discern the influence of native oxide layers and surface dipoles on graphene. Finally, the mechanism of THz emission from the graphene/silicon heterojunction is discussed, and the large-scale mapping of monolayer graphene on silicon is achieved successfully. These results demonstrate the efficacy of TES/LTEM for graphene characterization in the modern graphene-based semiconductor industry.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Realization of large-area ultraflat chiral blue phosphorene

Blue phosphorene (BlueP), a theoretically proposed phosphorous allotrope with buckled honeycomb lattice, has attracted considerable interest due to its intriguing properties. Introducing chirality into BlueP can further enrich its physical and chemical properties, expanding its potential for applications. However, the synthesis of chiral BlueP remains elusive. Here, we demonstrate the growth of large-area BlueP films on Cu(111), with lateral size limited by the wafer dimensions. Importantly, we discovered that the BlueP is characterized by an ultraflat honeycomb lattice, rather than the prevailing buckled structure, and develops highly ordered spatial chirality plausibly resulting from the rotational stacking with the substrate and interface strain release, as further confirmed by the geometric phase analysis. Moreover, spectroscopic measurements reveal its intrinsic metallic nature and different characteristic quantum oscillations in the image-potential states, which can be exploited for a range of potential applications including polarization optics, spintronics, and chiral catalysis.

Welded Carbon Nanotube-Graphene Hybrids with Tunable Strain Sensing Behavior for Wide-Range Bio-Signal Monitoring

Carbon nanotubes (CNTs) and graphene have commonly been applied as the sensitive layer of strain sensors. However, the buckling deformation of CNTs and the crack generation of graphene usually leads to an unsatisfactory strain sensing performance. In this work, we developed a universal strategy to prepare welded CNT-graphene hybrids with tunable compositions and a tunable bonding strength between components by the in situ reduction of CNT-graphene oxide (GO) hybrid by thermal annealing. The stiffness of the hybrid film could be tailored by both initial CNT/GO dosage and annealing temperature, through which its electromechanical behaviors could also be defined. The strain sensor based on the CNT-graphene hybrid could be applied to collect epidermal bio-signals by both capturing the faint skin deformation from wrist pulse and recording the large deformations from joint bending, which has great potential in health monitoring, motion sensing and human-machine interfacing.

Graphene oxide-based large-area dynamic covalent interfaces

Dynamic materials, being capable of reversible structural adaptation in response to the variation of external surroundings, have experienced significant advancements in the past several decades. In particular, dynamic covalent materials (DCMs), where the dynamic covalent bonds (DCBs) can reversibly break and reform under defined conditions, present superior dynamic characteristics, such as self-adaptivity, self-healing and shape memory. However, the dynamic characteristics of DCBs are mainly limited within the length scale of covalent bonds, due to the local position exchange or the inter-distance variation between the chemical compositions involved in the reversible covalent reactions. In this minireview, a discussion regarding the realization of long-range migration of chemical compositions along the interfaces of graphene oxide (GO)-based materials via the spatially connected and consecutive occurrence of DCB-based reversible covalent reactions is presented, and the interfaces are termed "large-area dynamic covalent interfaces (LDCIs)". The effective strategies, including water adsorption, interfacial curvature and metal-substrate support, as well as the potential applications of LDCIs in water dissociation and humidity sensing are summarized. Additionally, we also give an outlook on potential strategies to realize LDCIs on other 2D carbon-based materials, including the interfacial morphology and periodic element doping. This minireview provides insights into the realization of LDCIs on a wider range of 2D materials, and offers a theoretical perspective for advancing materials with long-range dynamic characteristics and improved performance, including controlled drug delivery/release and high-efficiency (bio)sensing.

Direct Observation of Topological Phonons in Graphene

Phonons, as the most fundamental emergent bosons in condensed matter systems, play an essential role in the thermal, mechanical, and electronic properties of crystalline materials. Recently, the concept of topology has been introduced to phonon systems, and the nontrivial topological states also exist in phonons due to the constraint by the crystal symmetry of the space group. Although the classification of various topological phonons has been enriched theoretically, experimental studies were limited to several three-dimensional (3D) single crystals with inelastic x-ray or neutron scatterings. The experimental evidence of topological phonons in two-dimensional (2D) materials is absent. Here, using high-resolution electron energy loss spectroscopy following our theoretical predictions, we directly map out the phonon spectra of the atomically thin graphene in the entire 2D Brillouin zone, and observe two nodal-ring phonons and four Dirac phonons. The closed loops of nodal-ring phonons and the conical structure of Dirac phonons in 2D momentum space are clearly revealed by our measurements, in nice agreement with our theoretical calculations. The ability of 3D mapping (2D momentum space and energy space) of phonon spectra opens up a new avenue to the systematic identification of the topological phononic states. Our work lays a solid foundation for potential applications of topological phonons in superconductivity, dynamic instability, and phonon diode.

Grain Size Engineering of CVD-Grown Large-Area Graphene Films

Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.

Unexpectedly Spontaneous Water Dissociation on Graphene Oxide Supported by Copper Substrate

Water dissociation is of fundamental importance in scientific fields and has drawn considerable interest in diverse technological applications. However, the high activation barrier of breaking the OH bond within the water molecule has been identified as the bottleneck, even for the water adsorbed on the graphene oxide (GO). Herein, using the density functional theory calculations, we demonstrate that the water molecule can be spontaneously dissociated on GO supported by the (111) surface of the copper substrate (Copper-GO). This process involves a proton transferring from water to the interfacial oxygen group, and a hydroxide covalently bonding to GO. Compared to that on GO, the water dissociation barrier on Copper-GO is significantly decreased to be less than or comparable to thermal fluctuations. This is ascribed to the orbital-hybridizing interaction between copper substrate and GO, which enhances the reaction activity of interfacial oxygen groups along the basal plane of GO for water dissociation. Our work provides a novel strategy to access water dissociation via the substrate-enhanced reaction activity of interfacial oxygen groups on GO and indicates that the substrate can serve as an essential key to tuning the catalytic performance of various two-dimensional material devices.

Graphene Metamaterial 3D Conformal Coating for Enhanced Light Harvesting

Silicon (Si) photovoltaic devices present possible avenues for overcoming global energy and environmental challenges. The high reflection and surface recombination losses caused by the Si interface and its nanofabrication process are the main hurdles for pursuing a high energy conversion efficiency. However, recent advances have demonstrated great success in improving device performance via proper Si interface modification with the optical and electrical features of two-dimensional (2D) materials. Firmly integrating large-area 2D materials with 3D Si nanostructures with no gap in between, which is essential for optimizing device performance, has rarely been achieved by any technique due to the complex 3D morphology of the nanostructures. Here we propose the concept of a 3D conformal coating of graphene metamaterials, in which the 2D graphene layers perfectly adapt to the 3D Si curvatures, leading to a universal 20% optical reflection decrease and a 60% surface passivation improvement. In a further application of this metamaterial 3D conformal coating methodology to standard Si solar cells, an overall 23% enhancement of the solar energy conversion efficiency is achieved. The 3D conformal coating strategy could be readily extended to various optoelectronic and semiconductor device systems with peculiar performance, offering a pathway for highly efficient energy-harvesting and storage solutions.

Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene

Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm2/(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.

The Road for 2D Semiconductors in the Silicon Age

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

Twin-Boundary Reduced Surface Diffusion on Electrically Stressed Copper Nanowires

Surface diffusion is intimately correlated with crystal orientation and surface structure. Fast surface diffusion accelerates phase transformation and structural evolution of materials. Here, through in situ transmission electron microscopy observation, we show that a copper nanowire with dense nanoscale coherent twin-boundary (CTB) defects evolves into a zigzag configuration under electric-current driven surface diffusion. The hindrance at the CTB-intercepted concave triple junctions decreases the effective surface diffusivity by almost 1 order of magnitude. The energy barriers for atomic migration at the concave junctions and different faceted surfaces are computed using density functional theory. We proposed that such a stable zigzag surface is shaped not only by the high-diffusivity facets but also by the stalled atomic diffusion at the concave junctions. This finding provides a defect-engineering route to develop robust interconnect materials against electromigration-induced failures for nanoelectronic devices.

The carbon chain growth during the onset of CVD graphene formation on γ-Al2O3 is promoted by unsaturated CH2 ends

Chemical vapor deposition of methane onto a template of alumina (Al₂O₃) nanoparticles is a prominent synthetic strategy of graphene meso-sponge, a new class of nano porous carbon materials consisting of single-layer graphene walls. However, the elementary steps controlling the early stages of graphene growth on Al₂O₃ surfaces are still not well understood. In this study, density functional theory calculations provide insights into the initial stages of graphene growth. We have modelled the mechanism of CH₄ dissociation on the (111), (110), (100), and (001) γ-Al₂O₃ surfaces. Subsequently, we have considered the reaction pathway leading to the formation of a C6 ring. The γ-Al₂O₃(110) and γ-Al₂O₃(100) are both active for CH₄ dissociation, but the (100) surface has higher catalytic activity towards the carbon growth reaction. The overall mechanism involves the formation of the reactive intermediate CH₂* that then can couple to form C_nH_2n* (n = 2-6) intermediates with unsaturated CH₂ ends. The formation of these species, which are not bound to the surface-active sites, promotes the sustained carbon growth in a nearly barrierless process. Also, the short distance between terminal carbon atoms leads to strong interactions, which might lead to the high activity between unsaturated CH₂* of the hydrocarbon chain. Analysis of the electron localization and geometries of the carbon chains reveals the formation of C-Al-σ bonds with the chain growing towards the vacuum rather than C-Al-π bonds covering the γ-Al₂O₃(100) surface. This growth behaviour prevents catalyst poisoning during the initial stage of graphene nucleation.

Remarkably enhanced dynamic oxygen migration on graphene oxide supported by copper substrate

The dynamic covalent properties of graphene oxide (GO) are of fundamental interest to a broad range of scientific areas and technological applications. It remains a challenge to access feasible dynamic reactions for reversibly breaking/reforming the covalent bonds of oxygen functional groups on GO, although these reactions can be induced by photonic or mechanical routes, or mediated by adsorbed water. Here, using density functional theory calculations, we demonstrate the remarkably enhanced dynamic oxygen migration along the basal plane of GO supported by copper substrate (GO@copper), with C-O bond breaking reactions and proton transfer between neighboring epoxy and hydroxyl groups. Compared to reactions on GO, the energy barriers of oxygen migrations on GO@copper are sharply reduced to be less than or comparable to thermal fluctuations, and meanwhile the crystallographic match between GO and copper substrate induces new oxygen migration paths on GO@copper. This work sheds light on understanding of the metal substrate-enhanced dynamic properties of GO, and evidences the strategy to tune the activity of two-dimensional-interfacial oxygen groups for various potential applications.

Charting the Atomic C Interaction with Transition Metal Surfaces

Carbon interaction with transition metal (TM) surfaces is a relevant topic in heterogeneous catalysis, either for its poisoning capability, for the recently attributed promoter role when incorporated in the subsurface, or for the formation of early TM carbides, which are increasingly used in catalysis. Herein, we present a high-throughput systematic study, adjoining thermodynamic plus kinetic evidence obtained by extensive density functional calculations on surface models (324 diffusion barriers located on 81 TM surfaces in total), which provides a navigation map of these interactions in a holistic fashion. Correlation between previously proposed electronic descriptors and ad/absorption energies has been tested, with the d-band center being found the most suitable one, although machine learning protocols also underscore the importance of the surface energy and the site coordination number. Descriptors have also been tested for diffusion barriers, with ad/absorption energies and the difference in energy between minima being the most appropriate ones. Furthermore, multivariable, polynomial, and random forest regressions show that both thermodynamic and kinetic data are better described when using a combination of different descriptors. Therefore, looking for a single perfect descriptor may not be the best quest, while combining different ones may be a better path to follow.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

High-Quality Graphene Using Boudouard Reaction

Following the game-changing high-pressure CO (HiPco) process that established the first facile route toward large-scale production of single-walled carbon nanotubes, CO synthesis of cm-sized graphene crystals of ultra-high purity grown during tens of minutes is proposed. The Boudouard reaction serves for the first time to produce individual monolayer structures on the surface of a metal catalyst, thereby providing a chemical vapor deposition technique free from molecular and atomic hydrogen as well as vacuum conditions. This approach facilitates inhibition of the graphene nucleation from the CO/CO2 mixture and maintains a high growth rate of graphene seeds reaching large-scale monocrystals. Unique features of the Boudouard reaction coupled with CO-driven catalyst engineering ensure not only suppression of the second layer growth but also provide a simple and reliable technique for surface cleaning. Aside from being a novel carbon source, carbon monoxide ensures peculiar modification of catalyst and in general opens avenues for breakthrough graphene-catalyst composite production.

Bottom-Up-Etching-Mediated Synthesis of Large-Scale Pure Monolayer Graphene on Cyclic-Polishing-Annealed Cu(111)

Synthesis of large-scale single-crystalline graphene monolayers without multilayers involves the fabrication of proper single-crystalline substrates and the ubiquitous formation of multilayered graphene islands during chemical vapor deposition. Here, a method of cyclic electrochemical polishing combined with thermal annealing, which allows the conversion of commercial polycrystalline Cu foils to single-crystal Cu(111) with an almost 100% yield, is presented. A global "bottom-up-etching" method that is capable of fabricating large-area pure single-crystalline graphene monolayers without multilayers through selectively etching bottom multilayered graphene underneath large area as-grown graphene monolayer on Cu(111) surface is demonstrated. Terahertz time-domain spectroscopy (THz-TDS) measurement of the pure monolayer graphene film shows a high average sheet conductivity of 2.8 mS and mean carrier mobility of 6903 cm² V^-1 s^-1 over a large area. Density functional theory (DFT) calculations show that the selective etching is induced by the much easier diffusion of hydrogen atoms than hydrocarbon radicals across the edges of the top graphene layer, and the simulated selective etching processes based on phase field modeling are well consistent with experimental observations. This work provides new ways toward the production of single-crystal Cu(111) and the synthesis of pure monolayer graphene with high electronic quality.

Graphene as a Piezoresistive Material in Strain Sensing Applications

High accuracy measurement of mechanical strain is critical and broadly practiced in several application areas including structural health monitoring, industrial process control, manufacturing, avionics and the automotive industry, to name a few. Strain sensors, otherwise known as strain gauges, are fueled by various nanomaterials, among which graphene has attracted great interest in recent years, due to its unique electro-mechanical characteristics. Graphene shows not only exceptional physical properties but also has remarkable mechanical properties, such as piezoresistivity, which makes it a perfect candidate for strain sensing applications. In the present review, we provide an in-depth overview of the latest studies focusing on graphene and its strain sensing mechanism along with various applications. We start by providing a description of the fundamental properties, synthesis techniques and characterization methods of graphene, and then build forward to the discussion of numerous types of graphene-based strain sensors with side-by-side tabular comparison in terms of figures-of-merit, including strain range and sensitivity, otherwise referred to as the gauge factor. We demonstrate the material synthesis, device fabrication and integration challenges for researchers to achieve both wide strain range and high sensitivity in graphene-based strain sensors. Last of all, several applications of graphene-based strain sensors for different purposes are described. All in all, the evolutionary process of graphene-based strain sensors in recent years, as well as the upcoming challenges and future directions for emerging studies are highlighted.

Mechanism of Corrugated Graphene Moiré Superstructures on Transition-Metal Surfaces

A graphene layer on a transition-metal (TM) surface can be either corrugated or flat, depending on the type of the substrate and its rotation angle with respect to the substrate. It was broadly observed that the degree of corrugation generally decreases with the increase of rotation angle or the decrease of Moiré pattern size. In contrast to a flat graphene on a TM surface, a corrugated graphene layer has an increased binding energy to the substrate and a concomitant elastic energy. Here, we developed a theoretical model about the competition between the binding energy increase and the elastic energy of corrugated graphene layers on TM surfaces in which all the parameters can be calculated by density functional theory (DFT) calculations. The agreement between the theoretical model and the experimental observations of graphene on various TM surfaces, for example, Ru(0001), Rh(111), Pt(111), and Ir(111), substantiated the applicability of this model for graphene on other TM surfaces. Moreover, the morphology of a graphene layer on an arbitrary TM surface can be theoretically predicted through simple DFT calculations based on the model. Our work thus provides a theoretical framework for the intelligent design of graphene/TM superstructures with the desired structure.

Continuous orientated growth of scaled single-crystal 2D monolayer films

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

Nanoscale layer of a minimized defect area of graphene and hexagonal boron nitride on copper for excellent anti-corrosion activity

In this work, we synthesized a monolayer of graphene and hexagonal boron nitride (hBN) using chemical vapor deposition. The physicochemical and electrochemical properties of the materials were evaluated to determine their morphology. High-purity materials and their atomic-scale coating on copper (Cu) foil were employed to prevent fast degradation rate. The hexagonal two-dimensional (2D) atomic structures of the as-prepared materials were assessed to derive their best anti-corrosion behavior. The material prepared under optimized conditions included edge-defect-free graphene nanosheets (∼0.0034μm²) and hBN (∼0.0038μm²) per unit area of 1μm². The coating of each material on the Cu surface significantly reduced the corrosion rate, which was ∼2.44 × 10^-2/year and 6.57 × 10^-3/year for graphene/Cu and hBN/Cu, respectively. Importantly, the corrosion rate of Cu was approximately 3-fold lower after coating with hBN relative to that of graphene/Cu. This approach suggests that the surface coating of Cu using cost-effective, eco-friendly, and the most abundant materials in nature is of interest for developing marine anti-corrosion micro-electronic devices and achieving surface modification of pure metals in industrial applications.

Subsurface-Carbon-Induced Local Charge of Copper for an On-Surface Displacement Reaction

Transition-metal carbides have sparked unprecedented enthusiasm as high-performance catalysts in recent years. Still, the catalytic properties of copper carbide remain unexplored. By introducing subsurface carbon to Cu(111), a displacement reaction of a proton in a carboxyl acid group with a single Cu atom is demonstrated at the atomic scale and room temperature. Its occurrence is attributed to the C-doping-induced local charge of surface Cu atoms (up to +0.30 e/atom), which accelerates the rate of on-surface deprotonation via reduction of the corresponding energy barrier, thus enabling the instant displacement of a proton with a Cu atom when the molecules adsorb on the surface. This well-defined and robust Cu^δ+ surface based on subsurface-carbon doping offers a novel catalytic platform for on-surface synthesis.

Growth of wrinkle-free and ultra-flat Bi-layer graphene on sapphire substrate using Cu sacrificial layer

The transfer process of chemical vapor deposition graphene film leads to unavoidable crack, wrinkles, doping, and contamination, which limits its function to establish stable and high-performance devices. It raises a growing interest to fabricate high-quality graphene on the target substrate directly. Here, bi-layer graphene (BLG) film can be grown on sapphire substrate by a Cu sacrificial layer using atmospheric-pressure chemical vapor deposition. The as-obtained BLG at the interface between sapphire and Cu layer is free of wrinkles, and the corresponding surface roughness Ra is as low as 0.66 nm. The square resistance of the graphene is 898.1 ohm sq^-1, which is the lowest among the records of graphene film directly grown on nonmetal substrates.

Graphene-Based Materials Immobilized within Chitosan: Applications as Adsorbents for the Removal of Aquatic Pollutants

Graphene and its derivatives, especially graphene oxide (GO), are attracting considerable interest in the fabrication of new adsorbents that have the potential to remove various pollutants that have escaped into the aquatic environment. Herein, the development of GO/chitosan (GO/CS) composites as adsorbent materials is described and reviewed. This combination is interesting as the addition of graphene to chitosan enhances its mechanical properties, while the chitosan hydrogel serves as an immobilization matrix for graphene. Following a brief description of both graphene and chitosan as independent adsorbent materials, the emerging GO/CS composites are introduced. The additional materials that have been added to the GO/CS composites, including magnetic iron oxides, chelating agents, cyclodextrins, additional adsorbents and polymeric blends, are then described and discussed. The performance of these materials in the removal of heavy metal ions, dyes and other organic molecules are discussed followed by the introduction of strategies employed in the regeneration of the GO/CS adsorbents. It is clear that, while some challenges exist, including cost, regeneration and selectivity in the adsorption process, the GO/CS composites are emerging as promising adsorbent materials.

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS₂ have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.

Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, high-resolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.

Method for the Manual Analysis of Moiré Structures in STM images

A method is presented to manually determine the lattice parameters of commensurate hexagonal moiré structures resolved by STM. It solves the problem that lattice parameters of moiré structures usually cannot be determined by inspection of an STM image, so that computer-based analyses are required. The lattice vector of a commensurate moiré structure is a sum of integer multiples both of the two basis vectors of the substrate and of the adsorbed layer. The method extracts the two factors with respect to the adsorbed layer from an analysis of the Fourier transform of an STM image. These two factors are related to the two factors with respect to the substrate layer. Using the cell augmentation method, six possible moiré structures are identified by algebra. When the orientation and lattice constant of the substrate are roughly known, this information is usually sufficient to determine a unique moiré structure and its lattice parameters.

Crumpled Graphene-Storage Media for Hydrogen and Metal Nanoclusters

Understanding the structural behavior of graphene flake, which is the structural unit of bulk crumpled graphene, is of high importance, especially when it is in contact with the other types of atoms. In the present work, crumpled graphene is considered as storage media for two types of nanoclusters-nickel and hydrogen. Crumpled graphene consists of crumpled graphene flakes bonded by weak van der Waals forces and can be considered an excellent container for different atoms. Molecular dynamics simulation is used to study the behavior of the graphene flake filled with the nickel nanocluster or hydrogen molecules. The simulation results reveal that graphene flake can be considered a perfect container for metal nanocluster since graphene can easily cover it. Hydrogen molecules can be stored on graphene flake at 77 K, however, the amount of hydrogen is low. Thus, additional treatment is required to increase the amount of stored hydrogen. Remarkably, the size dependence of the structural behavior of the graphene flake filled with both nickel and hydrogen atoms is found. The size of the filling cluster should be chosen in comparison with the specific surface area of graphene flake.

Direct imaging and electronic structure modulation of moiré superlattices at the 2D/3D interface

The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 Å moiré pattern at the 2D/3D interface. This moiré period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. We show, via ab initio electronic structure calculations, that charge density is modulated according to the moiré period, illustrating the potential for (opto-)electronic moiré engineering at the 2D/3D interface. Our work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques.

Encapsulation of metal nanoparticles at the surface of a prototypical layered material

Encapsulation of metal nanoparticles just below the surface of a prototypical layered material, graphite, is a recently discovered phenomenon. These encapsulation architectures have potential for tuning the properties of two-dimensional or layered materials, and additional applications might exploit the properties of the encapsulated metal nanoclusters themselves. The encapsulation process produces novel surface nanostructures and can be achieved for a variety of metals. Given that these studies of near-surface intercalation are in their infancy, these systems provide a rich area for future studies. This Review presents the current progress on the encapsulation, including experimental strategies and characterization, as well as theoretical understanding which leads to the development of predictive capability. The Review closes with future opportunities where further understanding of the encapsulation is desired to exploit its applications.

Copper(ii) ions supported on functionalized graphene oxide: an organometallic nanocatalyst for oxidative amination of azoles via C–H/C–N bond activation

Graphene oxide (GO) was chemically modified with para-aminobenzoic acid (PABA) to immobilize copper(ii) ions on its surface and used as a nanocatalyst for the oxidative C (sp²)–H bond amination reaction.

Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials

Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.

Intercalation of Mn in graphene/Cu(111) interface: insights to the electronic and magnetic properties from theory

The effect of Mn intercalation on the atomic, electronic and magnetic structure of the graphene/Cu(111) interface is studied using state-of-the-art density functional theory calculations. Different structural models of the graphene-Mn-Cu(111) interface are investigated. While a Mn monolayer placed between graphene and Cu(111) (an unfavorable configuration) yields massive rearrangement of the graphene-derived [Formula: see text] bands in the vicinity of the Fermi level, the possible formation of a [Formula: see text]Mn alloy at the interface (a favorable configuration) preserves the linear dispersion for these bands. The deep analysis of the electronic states around the Dirac point for the graphene/[Formula: see text]Mn/Cu(111) system allows to discriminate between contributions from three carbon sublattices of a graphene layer in this system and to explain the bands' as well as spins' topology of the electronic states around the Fermi level.

Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate

The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp² substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C₁₆H₆N₆).

Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface

We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We analyze over 100 different graphene covered Cu (high and low index) orientations exposed to air for 2 years. Four general oxidation modes are observed that can be mapped as regions onto the polar plot of Cu surface orientations. These modes are (1) complete, (2) irregular, (3) inhibited, and (4) enhanced wrinkle interface oxidation. We present a comprehensive characterization of these modes, consider the underlying mechanisms, compare air and water mediated oxidation, and discuss this in the context of the diverse prior literature in this area. This understanding incorporates effects from across the wide parameter space of 2D material interface engineering, relevant to key challenges in their emerging applications, ranging from scalable transfer to electronic contacts, encapsulation, and corrosion protection.

Growth and Grain Boundaries in 2D Materials

Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.

Interface between graphene and liquid Cu from molecular dynamics simulations

Controllable synthesis of defect-free graphene is crucial for applications since the properties of graphene are highly sensitive to any deviations from the crystalline lattice. We focus here on the emerging use of liquid Cu catalysts, which have high potential for fast and efficient industrial-scale production of high-quality graphene. The interface between graphene and liquid Cu is studied using force field and ab initio molecular dynamics, revealing a complete or partial embedding of finite-sized flakes. By analyzing flakes of different sizes, we find that the size-dependence of the embedding can be rationalized based on the energy cost of embedding vs bending the graphene flake. The embedding itself is driven by the formation of covalent bonds between the under-coordinated edge C atoms and the liquid Cu surface, which is accompanied by a significant charge transfer. In contrast, the central flake atoms are located around or slightly above 3 Å from the liquid Cu surface and exhibit weak van der Waals-bonding and much lower charge transfer. The structural and electronic properties of the embedded state revealed in our work provide the atomic-scale information needed to develop effective models to explain the special growth observed in experiments where various interesting phenomena such as flake self-assembly and rotational alignment, high growth speeds, and low defect densities in the final graphene product have been observed.

Exotic Two-Dimensional Structure: The First Case of Hexagonal NaCl

NaCl is one of the simplest compounds and was thought to be well-understood, and yet, unexpected complexities related to it were uncovered at high pressure and in low-dimensional states. Here, exotic hexagonal NaCl thin films on the (110) diamond surface were crystallized in the experiment following a theoretical prediction based on ab initio evolutionary algorithm USPEX. State-of-the-art calculations and experiments showed the existence of a hexagonal NaCl thin film, which is due to the strong chemical interaction of the NaCl film with the diamond substrate.

An all-atom kinetic Monte Carlo model for chemical vapor deposition growth of graphene on Cu(1 1 1) substrate

Various graphene morphologies (compact hexagonal, dendritic, and circular domains) have been observed during chemical vapor deposition (CVD) growth on Cu substrate. The existing all-atom kinetic Monte Carlo (kMC) models, however, are unable to reproduce all these graphene morphologies, suggesting that some crucial atomistic events that dictate the morphology are missing. In this work, we propose an all-atom kMC model to simulate the graphene CVD growth on Cu substrate. Besides the usual atomistic events, such as the deposition and diffusion of carbon species on the substrate, and their attachments to the edge, we further include three other important events, that is, the edge attachment of carbon species to form a kink, the diffusion of carbon species along the edge, and the rotation of dimers to form kinks. All the energetic parameters of these events are obtained from first-principles calculations. With this new model, we successfully predict the growth of various graphene morphologies, which are consistent with the morphology phase diagram. In addition to confirming that carbon dimers are the dominant feeding species, we also find that the dominance level depends on the growth flux and temperature. Therefore, the proposed model is able to capture the growth kinetics, providing a useful tool for controlled synthesis of graphene with desired morphologies.

Centimeter-Scale and Highly Crystalline Two-Dimensional Alcohol: Evidence for Graphenol (C6OH)

We report a chemical route to synthesize centimeter-scale stoichiometric "graphenol (C₆OH₁)", a 2D crystalline alcohol, via vapor phase hydroxylation of epitaxial graphene on Cu(111). Atomic resolution scanning tunneling microscopy revealed this highly-ordered configuration of graphenol and low energy electron diffraction studies on a large-area single crystal graphene film demonstrated the feasibility of the same superstructure being achieved at the centimeter length scale. Periodic density functional theory (DFT) calculations about the formation of C6(OH)₁ and its electronic structure are also reported.

Effects of substrate and tip characteristics on the surface friction of fluorinated graphene

Maintaining the superior lubricating properties of graphene under chemical modification requires a deep understanding of the origin of its friction enhancement. In this study, the DFT calculations were performed to investigate the effects of substrate and tip characteristics on the frictional properties of fluorinated graphene (FGr) on Cu(111) and Pt(111) substrates. The calculation results indicate that the fluorination will increase the geometrical corrugation of graphene and a stronger reactivity between graphene and substrate could confine the geometrical corrugation. The indentation calculations of an Ar atom on the FGr on Cu(111) and Pt(111) illustrate that geometrical corrugation contributes dominantly to the sliding potential energy corrugation. With respect to a reactive 10-atom Ir tip sliding on the FGr on Pt(111), the F atom transfers from graphene to the tip and the friction evolves into a fluorinated Ir tip sliding on the FGr. As a result, the work against the normal load to lift the tip over the geometrical corrugation starts to play a crucial role in contributing to the surface friction. Thus, reducing the geometrical corrugation of graphene after fluorination through a stronger reactive substrate provides a feasible avenue to preserve the lubricating properties of graphene.