Performance enhancement of a graphene-zinc phosphide solar cell using the electric field-effect

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Ultrafast and Sensitive Self-Powered Photodetector Based on Graphene/Pentacene Single Crystal Heterostructure with Weak Light Detection Capacity

Organic materials exhibit efficient light absorption and low-temperature, large-scale processability, and have stimulated enormous research efforts for next-generation optoelectronics. While, high-performance organic devices with fast speed and high responsivity still face intractable challenges, due to their intrinsic limitations including finite carrier mobility and high exciton binding energy. Here an ultrafast and highly sensitive broadband phototransistor is demonstrated by integrating high-quality pentacene single crystal with monolayer graphene. Encouragingly, the -3 dB bandwidth can reach up to 26 kHz, which is a record-speed for such sensitized organic phototransistors. Enormous absorption, long exciton diffusion length of pentacene crystal, and efficient interfacial charge transfer enable a high responsivity of >10⁵  A W^-1  and specific detectivity of >10¹¹  Jones. Moreover, self-powered weak-light detection is realized using a simple asymmetric configuration, and the obvious zero-bias photoresponses can be displayed even under 750 nW cm^-2  light intensity. Excellent response speed and photoresponsivity enable high-speed image sensor capability in UV-Vis ranges.  The results offer a practical strategy for constructing high-performance self-powered organic hybrid photodetectors, with strong applicability in wireless, weak-light detection, and video-frame-rate imaging applications.

Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions

High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult to balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) based on the WSe₂/MoS₂/WSe₂ double vdWHs, where the photovoltage that originated from one vdWH modulates the optoelectronic characteristics of another vdWH. The proposed photodiode exhibits an excellent self-powered ability with a high responsivity of 715 mA·W^-1 and fast response time of 45 μs. This work demonstrates an efficient method that optimizes the photoelectric performance of vdWH by introducing the photovoltaic field effect.

Synthesis of luminescent core/shell α-Zn3P2/ZnS quantum dots

Metal chalcogenide nanoparticles offer vast control over their optoelectronic properties via size, shape, composition, and morphology which has led to their use across fields including optoelectronics, energy storage, and catalysis. While cadmium and lead-based nanocrystals are prevalent in applications, concerns over their toxicity have motivated researchers to explore alternate classes of nanomaterials based on environmentally benign metals such as zinc and tin. The goal of this research is to identify material systems that offer comparable performance to existing metal chalcogenide systems from abundant, recyclable, and environmentally benign materials. With band gaps that span the visible through the infrared, II-V direct band gap semiconductors such as tetragonal zinc phosphide (α-Zn3P2) are promising candidates for optoelectronics. To date, syntheses of α-Zn3P2 nanoparticles have been hindered because of the toxicity of zinc and phosphorus precursors, surface oxidation, and defect states leading to carrier trapping and low photoluminescence quantum yield. This work reports a colloidal synthesis of quantum confined α-Zn3P2 nanoparticles from common phosphorus precursor tris(trimethylsilyl)phosphine and environmentally benign zinc carboxylates. Shelling of the nanoparticles with zinc sulfide is shown as a method of preventing oxidation and improving the optical properties of the nanoparticles. These results show a route to stabilizing α-Zn3P2 nanoparticles for optoelectronic device applications.

Self-powered cardiovascular electronic devices and systems

Cardiovascular electronic devices have enormous benefits for health and quality of life but the long-term operation of these implantable and wearable devices remains a huge challenge owing to the limited life of batteries, which increases the risk of device failure and causes uncertainty among patients. A possible approach to overcoming the challenge of limited battery life is to harvest energy from the body and its ambient environment, including biomechanical, solar, thermal and biochemical energy, so that the devices can be self-powered. This strategy could allow the development of advanced features for cardiovascular electronic devices, such as extended life, miniaturization to improve comfort and conformability, and functions that integrate with real-time data transmission, mobile data processing and smart power utilization. In this Review, we present an update on self-powered cardiovascular implantable electronic devices and wearable active sensors. We summarize the existing self-powered technologies and their fundamental features. We then review the current applications of self-powered electronic devices in the cardiovascular field, which have two main goals. The first is to harvest energy from the body as a sustainable power source for cardiovascular electronic devices, such as cardiac pacemakers. The second is to use self-powered devices with low power consumption and high performance as active sensors to monitor physiological signals (for example, for active endocardial monitoring). Finally, we present the current challenges and future perspectives for the field.

Unravelling the early oxidation mechanism of zinc phosphide (Zn3P2) surfaces by adsorbed oxygen and water: a first-principles DFT-D3 investigation

Zinc phosphide (Zn₃P₂) is a novel earth-abundant photovoltaic material with a direct band gap of 1.5 eV. Herein, the incipient oxidation mechanism of the (001), (101), and (110) Zn₃P₂ surfaces in the presence of oxygen and water, which severely limits the fabrication of efficient Zn₃P₂-based photovoltaics, has been investigated in detail by means of dispersion-corrected density functional theory (DFT-D3) calculations. The fundamental aspects of the oxygen and water adsorption, including the initial adsorption geometries, adsorption energies, structural parameters, and electronic properties, are presented and discussed. A chemical picture and origin of the initial steps of Zn₃P₂ surface oxidation are proposed through analyses of Bader charges, partial density of states, and differential charge density isosurface contours. The results presented show that while water interacts weakly with the Zn ions on the Zn₃P₂ surfaces, molecular and dissociative oxygen species interact strongly with the (001), (101), and (110) surface species. The adsorption of oxygen is demonstrated to be characterized by a significant charge transfer from the interacting surface species, causing them to be oxidized from Zn²⁺ to Zn³⁺ formal oxidation states. Preadsorbed oxygen species are shown to facilitate the O-H bond activation of water towards its dissociation, with the adsorbed hydroxide species (OH^-) demonstrated to draw a significant amount of charges from the interacting surface sites. Despite the fact that the semiconducting nature of the different Zn₃P₂ surfaces is preserved, we observe noticeable adsorption induced changes in their electronic structures, with the covered surface exhibiting smaller band gaps than the naked surfaces. The present study demonstrates the importance of the oxygen-water/solid interface to understand the oxidation mechanism of Zn₃P₂ in the presence of oxygen and water at the molecular level. The study also highlights the need for Zn₃P₂ nanoparticles to be protected against possible oxidation in the presence of oxygen and moisture via in situ functionalization, wherein the Zn₃P₂ nanoparticles are exposed to a vapour of organic functional molecules immediately after synthesis.

High-quality perovskite films via post-annealing microwave treatment

The crystalline quality of the perovskite film plays a key role in improving the optoelectronic properties and the performance of planar perovskite hybrid solar cells (PSCs).

Furrowed hole-transport layer using argon plasma in an inverted perovskite solar cell

In this study, a novel process was found to be effective using the argon-plasma treatment, in which the ion cluster was used to scour the PEDOT:PSS surface instead of the traditional bombardment method. The photoelectric conversion efficiency of the device reaches 14.8%.

Directing Charge Transfer in Quantum Dot Assemblies

The optical and electronic properties of semiconductor quantum dots (QDs) make them attractive candidates for applications in photovoltaics, spintronics, photocatalysis, and optoelectronics. Understanding how to control the flow of charge in QD assemblies is essential for realizing novel applications. This Account explores some unique characteristics of charge transport in QD dyads, triads, and their assemblies. The emerging features of these assemblies that provide new opportunities to manipulate charge flow at the nanoscale are (1) cascading energy landscapes and band offsets to inhibit charge recombination, (2) electrostatic fields that direct charge flow through QD-QD and QD-conjugated polymer junctions, and (3) QD chirality and chiral imprinting that promotes vectorial electron and spin selective transport. Charge flow kinetics is determined by a combination of familiar electron transfer parameters (reaction free energy, reorganization energy, and electronic coupling), donor and acceptor electronic densities of states, and internal electric fields. Electron transfer and electronic structure theory, combined with kinetic modeling, place the measured kinetics of QD electron transfer donor-acceptor assemblies into a unified conceptual context. The experimental transfer rates measured in these systems depend upon structure and the internal electric fields that are present in the assemblies. A negatively charged donor and positively charged acceptor, for example, facilitates (inhibits) electron (hole) transfer, while an electric field of opposite orientation (reversal of charges) inhibits (promotes) electron (hole) transfer. These and other emerging rules that govern charge flow in NP assemblies provide a strategy to design the directionality and yield of interfacial charge transport. Chirality at the nanoscale can induce spin selective charge transport, providing new ways to direct charge (and spin) flow in QD assemblies. Magnetoresistance and magnetic conductive probe atomic force microscopy experiments show spin selective electron transport for chirally imprinted QD assemblies. Photoinduced electron transfer from achiral donor-QDs to chiral acceptor-QDs depends on the electron spin and chiroptical properties of the acceptor-QDs. These assemblies show transport characteristics that correlate with features of the QDs' circular dichroism spectra, presenting intriguing challenges to theory, and indicating that spectroscopic signatures may assist in the design and diagnosis of functional molecular assemblies. Theoretical and experimental studies of charge transport in well-defined QD assemblies are establishing design principles for vectorial charge transport and are also refining questions surrounding the mechanism and control of these processes. These intensified efforts are forging links between fundamental discoveries regarding mechanism and practical applications for these novel assembled nanostructures.

Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films

This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn3P2 have a number of potential applications and phosphinecarboxamide is a safer and more efficient precursor than the highly toxic, corrosive and flammable phosphine used in previous CVD syntheses.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

This review provides a systematic overview of the integration, surface, and interfacial engineering of 2D/3D and 2D/2D homo/heterojunctions for PV and PEC applications.

Mixed-dimensional van der Waals heterostructures

The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling-bond-free surface will interact with another through vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through non-covalent interactions. We present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, we highlight the challenges and opportunities for mixed-dimensional vdW heterostructures.

Human-Like Sensing and Reflexes of Graphene-Based Films

Humans have numerous senses, wherein vision, hearing, smell, taste, and touch are considered as the five conventionally acknowledged senses. Triggered by light, sound, or other physical stimulations, the sensory organs of human body are excited, leading to the transformation of the afferent energy into neural activity. Also converting other signals into electronical signals, graphene-based film shows its inherent advantages in responding to the tiny stimulations. In this review, the human-like senses and reflexes of graphene-based films are presented. The review starts with the brief discussions about the preparation and optimization of graphene-based film, as where as its new progress in synthesis method, transfer operation, film-formation technologies and optimization techniques. Various human-like senses of graphene-based film and their recent advancements are then summarized, including light-sensitive devices, acoustic devices, gas sensors, biomolecules and wearable devices. Similar to the reflex action of humans, graphene-based film also exhibits reflex when under thermal radiation and light actuation. Finally, the current challenges associated with human-like applications are discussed to help guide the future research on graphene films. At last, the future opportunities lie in the new applicable human-like senses and the integration of multiple senses that can raise a revolution in bionic devices.

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions

After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.

Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector

In graphene/semiconductor heterojunction, the statistic charge transfer between graphene and semiconductor leads to decreased junction barrier height and limits the Fermi level tuning effect in graphene, which greatly affects the final performance of the device. In this work, we have designed a sandwich diode for solar cells and photodetectors through inserting 2D hexagonal boron nitride (h-BN) into graphene/GaAs heterostructure to suppress the static charge transfer. The barrier height of graphene/GaAs heterojunction can be increased from 0.88 eV to 1.02 eV by inserting h-BN. Based on the enhanced Fermi level tuning effect with interface h-BN, through adopting photo-induced doping into the device, power conversion efficiency (PCE) of 10.18% has been achieved for graphene/h-BN/GaAs compared with 8.63% of graphene/GaAs structure. The performance of graphene/h-BN/GaAs based photodetector is also improved with on/off ratio increased by one magnitude compared with graphene/GaAs structure.

Synthetic methods and electrochemical applications for transition metal phosphide nanomaterials

Recent developments and challenges in transition metal phosphide nanomaterials, with a focus on synthetic methods and their electrochemical applications, have been stated carefully.

A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics

Human biomechanical energy is characterized by fluctuating amplitudes and variable low frequency, and an effective utilization of such energy cannot be achieved by classical energy-harvesting technologies. Here we report a high-efficient self-charging power system for sustainable operation of mobile electronics exploiting exclusively human biomechanical energy, which consists of a high-output triboelectric nanogenerator, a power management circuit to convert the random a.c. energy to d.c. electricity at 60% efficiency, and an energy storage device. With palm tapping as the only energy source, this power unit provides a continuous d.c. electricity of 1.044 mW (7.34 W m(-3)) in a regulated and managed manner. This self-charging unit can be universally applied as a standard 'infinite-lifetime' power source for continuously driving numerous conventional electronics, such as thermometers, electrocardiograph system, pedometers, wearable watches, scientific calculators and wireless radio-frequency communication system, which indicates the immediate and broad applications in personal sensor systems and internet of things.

Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature

Earth-abundant material, kesterite Cu2ZnSnS4 (CZTS), demonstrates the tremendous potential to serve as the absorber layer for the bifacial thin-film solar cell. The exploration of appropriate sulfurization conditions including annealing temperature is significant to gain insight into the growth mechanism based on the substrates using transparent conductive oxides (TCO) and improve device performance. The kesterite solar absorbers were fabricated on ITO substrates by sulfurizing co-electroplated Cu-Zn-Sn-S precursors in argon diluted H2S atmosphere at different temperatures (475-550 °C) for 30 min. Experimental proof, including cross-section scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, UV-vis-NIR transmission spectrum, and Raman and far-infrared spectroscopy, is presented for the crystallization of CZTS on an ITO substrate and the interfacial reaction between the ITO back contact and CZTS absorber. The complete conversion of precursor into CZTS requires at least 500 °C sulfurization temperature. The aggressive interfacial reaction leading to the out-diffusion of In into CZTS to a considerable extent, formation of tin sulfides, and electrically conductive degradation of ITO back contact occurs at the sulfurization temperatures higher than 500 °C. The bifacial devices obtained by 520 °C sulfurization exhibit the best conversion efficiencies and open circuit voltages. However, the presence of non-ohmic back contact (secondary diode), the short minority lifetime, and the high interfacial recombination rates negatively limit the open circuit voltage, fill factor, and efficiency, evidenced by illumination/temperature-dependent J-V, frequency-dependent capacitance-voltage (C-V-f), time-resolved PL (TRPL), and bias-dependent external quantum efficiency (EQE) measurements.

Zn3As2 nanowires and nanoplatelets: highly efficient infrared emission and photodetection by an earth abundant material

The development of earth abundant materials for optoelectronics and photovoltaics promises improvements in sustainability and scalability. Recent studies have further demonstrated enhanced material efficiency through the superior light management of novel nanoscale geometries such as the nanowire. Here we show that an industry standard epitaxy technique can be used to fabricate high quality II-V nanowires (1D) and nanoplatelets (2D) of the earth abundant semiconductor Zn3As2. We go on to establish the optoelectronic potential of this material by demonstrating efficient photoemission and detection at 1.0 eV, an energy which is significant to the fields of both photovoltaics and optical telecommunications. Through dynamical spectroscopy this superior performance is found to arise from a low rate of surface recombination combined with a high rate of radiative recombination. These results introduce nanostructured Zn3As2 as a high quality optoelectronic material ready for device exploration.