First-principles calculation of the isotope effect on boron nitride nanotube thermal conductivity

Growth methodologies of boron nitride nanotubes and their neutron shielding applications: a review

This review provides a comprehensive overview of the growth methodologies and neutron shielding applications of Boron Nitride Nanotubes (BNNTs). BNNTs have garnered significant attention because of their unique combination of high thermal stability, mechanical strength, and exceptional neutron absorption properties. Synthesis methods for BNNTs, including laser ablation, thermal plasma treatment, chemical vapour deposition (CVD), and ball milling have been thoroughly examined, highlighting their mechanisms, advantages, and challenges. Each method contributes uniquely to the quality and applicability of BNNTs in terms of scalability and production efficiency. This study focused on the applications of BNNTs in neutron absorption, particularly in aerospace engineering. BNNTs have shown promising potential in enhancing the safety and longevity of space missions by providing effective radiation protection. Furthermore, their potential in medical applications, particularly in Boron Neutron Capture Therapy (BNCT) for cancer treatment, has been explored. BNCT offers a targeted approach to cancer therapy by utilizing the high boron-10 content of BNNTs for precise and localized treatment. This review also provides an outlook on the future of BNNT research, emphasizing the need for more efficient growth methods to facilitate wider adoption and commercialization. The versatility of BNNTs across various fields, from space exploration to medical science, underscores their potential as materials of significant scientific and technological importance. As research progresses, BNNTs are expected to play a pivotal role in advancing materials science and offer innovative solutions to complex challenges.

Thermal Conductivity Enhancement of Polymeric Composites Using Hexagonal Boron Nitride: Design Strategies and Challenges

With the integration and miniaturization of chips, there is an increasing demand for improved heat dissipation. However, the low thermal conductivity (TC) of polymers, which are commonly used in chip packaging, has seriously limited the development of chips. To address this limitation, researchers have recently shown considerable interest in incorporating high-TC fillers into polymers to fabricate thermally conductive composites. Hexagonal boron nitride (h-BN) has emerged as a promising filler candidate due to its high-TC and excellent electrical insulation. This review comprehensively outlines the design strategies for using h-BN as a high-TC filler and covers intrinsic TC and morphology effects, functionalization methods, and the construction of three-dimensional (3D) thermal conduction networks. Additionally, it introduces some experimental TC measurement techniques of composites and theoretical computational simulations for composite design. Finally, the review summarizes some effective strategies and possible challenges for the design of h-BN fillers. This review provides researchers in the field of thermally conductive polymeric composites with a comprehensive understanding of thermal conduction and constructive guidance on h-BN design.

Synthesis of Double-Walled Boron Nitride Nanotubes from Ammonia Borane by Thermal Plasma Methods

Highly crystalline double-walled boron nitride nanotubes (DWBNNTs ∼60%) were synthesized from ammonia borane (AB; H₃B-NH₃) precursors using a high-temperature thermal plasma method. The differences between the synthesized BNNTs using the hexagonal boron nitride (h-BN) precursor and AB precursor were compared using various techniques such as thermogravimetric analysis, X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, and in situ optical emission spectroscopy (OES). The synthesized BNNTs were longer and had fewer walls when the AB precursor was used than when the conventional method was used (with the h-BN precursor). The production rate significantly improved from ∼20 g/h (h-BN precursor) to ∼50 g/h (AB precursor), and the content of amorphous boron impurities was significantly reduced, implying a self-assembly mechanism of BN radicals rather than the conventional mechanism involving boron nanoballs. Through this mechanism, the BNNT growth, which was accompanied by an increased length, a decreased diameter, and a high growth rate, could be understood. The findings were also supported by in situ OES data. Considering the increased production yield, this synthesis method using AB precursors is expected to make an innovative contribution to the commercialization of BNNTs.

Defect-Induced Transport Enhancement in Carbon-Boron Nitride-Carbon Heteronanotube Junctions

New heteromaterials, particularly those involving nanoscale elements such as nanotubes, have opened a wide window for the next generation of materials and devices. Here, we perform density functional theory (DFT) simulations combined with a Green's function (GF) scattering approach to investigate the electronic transport properties of defective heteronanotube junctions (hNTJs) made of (6,6) carbon nanotubes (CNT) with a boron nitride nanotube (BNNT) as scatterer. We used the sculpturene method to form different heteronanotube junctions with various types of defects in the boron nitride part. Our results show that the defects and the curvature induced by them have a nontrivial impact on the transport properties and, interestingly, lead to an increase of the conductance of the heteronanotube junctions compared to the free-defect junction. We also show that narrowing the BNNTs region leads to a large decrease of the conductance, an effect that is opposite to that of the defects.

Localization of the Optical Phonon Modes in Boron Nitride Nanotubes: Mixing Effect of 10B Isotopes and Vacancies

We explored the mixing effect of ¹⁰B isotopes and boron (B) or nitrogen (N) vacancies on the atomic vibrational properties of (10,0) single-wall boron nitride nanotubes (BNNTs). The forced oscillation technique was employed to evaluate the phonon modes for the entire range (0-100%) of ¹⁰B isotopes and atomic vacancy densities ranging from 0 to 30%. With increasing isotope densities, we noticed a blue shift of the Raman-active A₁ phonon peak, whereas an increased density of mixed or independent B and N vacancies resulted in the emergence of a new low-frequency peak and the annihilation of the A₁ peak in the phonon density of states. High-energy optical phonons were localized as a result of both ¹⁰B isotopes and the presence of mixing defects. We found an asymmetrical nature of the localization length with increasing ¹⁰B isotope content, which corresponds well to the isotope-inherited localization length of carbon nanotubes and monolayer graphene. The localization length falls abruptly with the increase in concentration of both atomic vacancies (B or N) and mixing defects (¹⁰B isotope and vacancies). These findings are critical for understanding heat conduction and nanoscopic vibrational investigations such as tip-enhanced Raman spectra in BNNTs, which can map local phonon energies.

Spontaneous formation of boron nitride nanotube fibers by boron impurity reduction in laser ablation of ammonia borane

Highly crystalline and few-walled boron nitride nanotubes (BNNTs) had been synthesized by laser ablation using only ammonia borane as a precursor. As a molecular precursor, ammonia borane supplied both B and N atoms with a ratio of 1:1, and BNNTs were formed via the homogeneous nucleation of BN radicals, not the growth from boron nano-droplets, which is a generally accepted growth mechanism of the laser-grown BNNTs. Owing to the absence of amorphous boron impurities, the van der Waals interaction among BNNTs became effective and thus a BNNT fibers was formed spontaneously during the BNNT synthesis. The BNNT growth and the subsequent fiber formation are found to occur only at high pressures of a surrounding gas. The mechanism behind the critical role of pressure was elucidated from the perspective of reaction kinetics and thermal fluid behaviors. A polarized Raman study confirmed that the BNNT fiber formed exhibits a good alignment of BNNTs, which implies great potential for continuous production of high-quality BNNT fibers for various applications.

Ultrahigh-Aspect-Ratio Boron Nitride Nanosheets Leading to Superhigh In-Plane Thermal Conductivity of Foldable Heat Spreader

The rapid development of integrated circuits and electronic devices creates a strong demand for highly thermally conductive yet electrically insulating composites to efficiently solve "hot spot" problems during device operation. On the basis of these considerations, hexagonal boron nitride nanosheets (BNNS) have been regarded as promising fillers to fabricate polymer matrix composites. However, so far an efficient approach to prepare ultrahigh-aspect-ratio BNNS with large lateral size while maintaining an atomically thin nature is still lacking, seriously restricting further improvement of the thermal conductivity for BNNS/polymer composites. Here, a rapid and high-yield method based on a microfluidization technique is developed to obtain exfoliated BNNS with a record high aspect ratio of ≈1500 and a low degree of defects. A foldable and electrically insulating film made of such a BNNS and poly(vinyl alcohol) (PVA) matrix through filtration exhibits an in-plane thermal conductivity of 67.6 W m^-1 K^-1 at a BNNS loading of 83 wt %, leading to a record high value of thermal conductivity enhancement (≈35 500). The composite film then acts as a heat spreader for heat dissipation of high-power LED modules and shows superior cooling efficiency compared to commercial flexible copper clad laminate. Our findings provide a practical route to produce electrically insulating polymer composites with high thermal conductivity for thermal management applications in modern electronic devices.

Nanocelluloses and Related Materials Applicable in Thermal Management of Electronic Devices: A Review

Owing to formidable advances in the electronics industry, efficient heat removal in electronic devices has been an urgent issue. For thermal management, electrically insulating materials that have higher thermal conductivities are desired. Recently, nanocelluloses (NCs) and related materials have been intensely studied because they possess outstanding properties and can be produced from renewable resources. This article gives an overview of NCs and related materials potentially applicable in thermal management. Thermal conduction in dielectric materials arises from phonons propagation. We discuss the behavior of phonons in NCs as well.

Effects of Divacancy and Extended Line Defects on the Thermal Transport Properties of Graphene Nanoribbons

The effects of divacancy, including isolated defects and extended line defects (ELD), on the thermal transport properties of graphene nanoribbons (GNRs) are investigated using the Nonequilibrium Green's function method. Different divacancy defects can effectively tune the thermal transport of GNRs and the thermal conductance is significantly reduced. The phonon scattering of a single divacancy is mostly at high frequencies while the phonon scattering at low frequencies is also strong for randomly distributed multiple divacancies. The collective effect of impurity scattering and boundary scattering is discussed, which makes the defect scattering vary with the boundary condition. The effect on thermal transport properties of a divacancy is also shown to be closely related to the cross section of the defect, the internal structure and the bonding strength inside the defect. Both low frequency and high frequency phonons are scattered by 48, d5d7 and t5t7 ELD. However, the 585 ELD has almost no influence on phonon scattering at low frequency region, resulting in the thermal conductance of GNRs with 585 ELD being 50% higher than that of randomly distributed 585 defects. All these results are valuable for the design and manufacture of graphene nanodevices.

Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation

The morphological analysis of the end of boron nitride nanotubes (BNNTs) using high-resolution transmission electron microscopy (HR-TEM) can provide valuable insight into the growth mechanism in high temperature pressure (HTP) laser ablation where the best quality of BNNT materials can be obtained so far. Two growth modes of BNNT coexisting during the synthesis process have been proposed based on HR-TEM observation and length analysis. One is the root growth mode, in which boron nitride (BN) species formed via the surface interaction between surrounding N2 molecules and boron nanodroplets incorporate into the tubular structure. Another mode called open-end growth mode means the prolongation of tube growth from the exposed BN edge surrounding the surface of boron nanodroplets which is constructed by the heterogeneous nucleation of absorbed BN radicals from the gas plume. The statistical data, the proportions of end structures and the length of BNNTs, could be fitted to two growth modes, and the open-end growth mode is found to be especially effective in producing longer nanotubes with a higher growth rate. The scientific understanding of the growth mechanism is believed to provide the control for optimized production of BNNTs.

Green function, quasi-classical Langevin and Kubo-Greenwood methods in quantum thermal transport

With the advances in fabrication of materials with feature sizes at the order of nanometers, it has been possible to alter their thermal transport properties dramatically. Miniaturization of device size increases the power density in general, hence faster electronics require better thermal transport, whereas better thermoelectric applications require the opposite. Such diverse needs bring new challenges for material design. Shrinkage of length scales has also changed the experimental and theoretical methods to study thermal transport. Unsurprisingly, novel approaches have emerged to control phonon flow. Besides, ever increasing computational power is another driving force for developing new computational methods. In this review, we discuss three methods developed for computing vibrational thermal transport properties of nano-structured systems, namely Green function, quasi-classical Langevin, and Kubo-Green methods. The Green function methods are explained using both nonequilibrium expressions and the Landauer-type formula. The partitioning scheme, decimation techniques and surface Green functions are reviewed, and a simple model for reservoir Green functions is shown. The expressions for the Kubo-Greenwood method are derived, and Lanczos tridiagonalization, continued fraction and Chebyshev polynomial expansion methods are discussed. Additionally, the quasi-classical Langevin approach, which is useful for incorporating phonon-phonon and other scatterings is summarized.

Boron nitride nanotubes: synthesis and applications

Boron nitride nanotube (BNNT) has similar tubular nanostructure as carbon nanotube (CNT) in which boron and nitrogen atoms arranged in a hexagonal network. Owing to the unique atomic structure, BNNT has numerous excellent intrinsic properties such as superior mechanical strength , high thermal conductivity, electrically insulating behavior, piezoelectric property, neutron shielding capability, and oxidation resistance. Since BNNT was first synthesized in 1995, developing efficient BNNT production route has been a significant issue due to low yield and poor quality in comparison with CNT, thus limiting its practical uses. However, many great successes in BNNT synthesis have been achieved in recent years, enabling access to this material and paving the way for the development of promising applications. In this article, we discussed current progress in the production of boron nitride nanotube, focusing on the most common and effective methods that have been well established so far. In addition, we presented various applications of BNNT including polymer composite reinforcement, thermal management packages, piezo actuators, and neutron shielding nanomaterial.

The Role of Interfacial Electronic Properties on Phonon Transport in Two-Dimensional MoS2 on Metal Substrates

We investigate the role of interfacial electronic properties on the phonon transport in two-dimensional MoS₂ adsorbed on metal substrates (Au and Sc) using first-principles density functional theory and the atomistic Green's function method. Our study reveals that the different degree of orbital hybridization and electronic charge distribution between MoS₂ and metal substrates play a significant role in determining the overall phonon-phonon coupling and phonon transmission. The charge transfer caused by the adsorption of MoS₂ on Sc substrate can significantly weaken the Mo-S bond strength and change the phonon properties of MoS₂, which result in a significant change in thermal boundary conductance (TBC) from one lattice-stacking configuration to another for same metallic substrate. In a lattice-stacking configuration of MoS₂/Sc, weakening of the Mo-S bond strength due to charge redistribution results in decrease in the force constant between Mo and S atoms and substantial redistribution of phonon density of states to low-frequency region which affects overall phonon transmission leading to 60% decrease in TBC compared to another configuration of MoS₂/Sc. Strong chemical coupling between MoS₂ and the Sc substrate leads to a significantly (∼19 times) higher TBC than that of the weakly bound MoS₂/Au system. Our findings demonstrate the inherent connection among the interfacial electronic structure, the phonon distribution, and TBC, which helps us understand the mechanism of phonon transport at the MoS₂/metal interfaces. The results provide insights for the future design of MoS₂-based electronics and a way of enhancing heat dissipation at the interfaces of MoS₂-based nanoelectronic devices.

Thermal transport phenomena in nanoparticle suspensions

Nanoparticle suspensions in liquids have received great attention, as they may offer an approach to enhance thermophysical properties of base fluids. A good variety of applications in engineering and biomedicine has been investigated with the aim of exploiting the above potential. However, the multiscale nature of nanosuspensions raises several issues in defining a comprehensive modelling framework, incorporating relevant molecular details and much larger scale phenomena, such as particle aggregation and their dynamics. The objectives of the present topical review is to report and discuss the main heat and mass transport phenomena ruling macroscopic behaviour of nanosuspensions, arising from molecular details. Relevant experimental results are included and properly put in the context of recent observations and theoretical studies, which solved long-standing debates about thermophysical properties enhancement. Major transport phenomena are discussed and in-depth analysis is carried out for highlighting the role of geometrical (nanoparticle shape, size, aggregation, concentration), chemical (pH, surfactants, functionalization) and physical parameters (temperature, density). We finally overview several computational techniques available at different scales with the aim of drawing the attention on the need for truly multiscale predictive models. This may help the development of next-generation nanoparticle suspensions and their rational use in thermal applications.

Phonon transport at the interfaces of vertically stacked graphene and hexagonal boron nitride heterostructures

Hexagonal boron nitride (h-BN) is a promising substrate for graphene based nano-electronic devices. We investigate the ballistic phonon transport at the interface of vertically stacked graphene and h-BN heterostructures using first principles density functional theory and atomistic Green's function simulations considering the influence of lattice stacking. We compute the frequency and wave-vector dependent transmission function and observe distinct stacking-dependent phonon transmission features for the h-BN/graphene/h-BN sandwiched systems. We find that the in-plane acoustic modes have the dominant contributions to the phonon transmission and thermal boundary conductance (TBC) for the interfaces with the carbon atom located directly on top of the boron atom (C-B matched) because of low interfacial spacing. The low interfacial spacing is a consequence of the differences in the effective atomic volume of N and B and the difference in the local electron density around N and B. For the structures with the carbon atom directly on top of the nitrogen atom (C-N matched), the spatial distance increases and the contribution of in-plane modes to the TBC decreases leading to higher contributions by out-of-plane acoustic modes. We find that the C-B matched interfaces have stronger phonon-phonon coupling than the C-N matched interfaces, which results in significantly higher TBC (more than 50%) in the C-B matched interface. The findings in this study will provide insights to understand the mechanism of phonon transport at h-BN/graphene/h-BN interfaces, to better explain the experimental observations and to engineer these interfaces to enhance heat dissipation in graphene based electronic devices.

Tuning thermal transport in Si nanowires by isotope engineering

The thermal conductivity of ²⁸Si_x³⁰Si_1−x nanowires is reduced up to ∼20% (∼50%) at room (low) temperature with respect to isotope purfied nanowires.

The unexpected non-monotonic inter-layer bonding dependence of the thermal conductivity of bilayered boron nitride

Hexagonal boron nitride (BN) and its bilayer form are very fascinating two-dimensional materials that have attracted tremendous interest recently. Their realistic applications in emerging nanoelectronics usually quest for manipulating the thermal transport properties in a precise manner. Using nonequilibrium molecular dynamics simulations, we herein studied the effect of inter-layer covalent bonding on the thermal conductivity of bilayered BN. We found that the in-plane thermal conductivity of bilayered BN, which can be largely tuned by introducing covalent bonding between the two BN layers, depends not only on the inter-layer bonding density, but also on the detailed topological configuration of the inter-layer bonds. For randomly distributed inter-layer bonding the thermal conductivity of bilayered BN decreases monotonically with inter-layer bonding density, the same behavior already found for bilayered graphene. However, for regularly arranged inter-layer bonding the thermal conductivity of bilayered BN surprisingly possesses a non-monotonic dependence on the inter-layer bonding density. This non-intuitive non-monotonic dependence is further explained by performing spectral energy density analysis, where the peak and valley values of the thermal conductivity are governed by different mechanisms. These results suggest the application of inter-layer covalent bonding in designing nanoscale devices with precisely tunable thermal conductivities.

Advances in the measurement and computation of thermal phonon transport properties

Heat conduction by phonons is a ubiquitous process that incorporates a wide range of physics and plays an essential role in applications ranging from space power generation to LED lighting. Heat conduction has been studied for over two hundred years, yet many of the microscopic details have remained unknown in most crystalline solids, including which phonon-phonon interactions are primarily responsible for thermal resistance and how heat is distributed among the broad thermal spectrum. This lack of knowledge was the result of limitations on the available tools to study heat conduction. However, recent advances in both computation and experiment are enabling an unprecedented microscopic view of thermal transport by phonons in both bulk and nanostructured crystals, from the level of atomic bonding to mesoscopic transport in complex devices. In this topical review, we examine these techniques and the microscopic insights gained into the science and engineering of heat conduction.

Thermally conductive, electrically insulating and melt-processable polystyrene/boron nitride nanocomposites prepared by in situ reversible addition fragmentation chain transfer polymerization

Thermally conductive and electrically insulating polymer/boron nitride (BN) nanocomposites are highly attractive for various applications in many thermal management fields. However, so far most of the preparation methods for polymer/BN nanocomposites have usually caused difficulties in the material post processing. Here, an in situ grafting approach is designed to fabricate thermally conductive, electrically insulating and post-melt processable polystyrene (PS)/BN nanosphere (BNNS) nanocomposites by initiating styrene (St) on the surface functionalized BNNSs via reversible addition fragmentation chain transfer polymerization. The nanocomposites exhibit significantly enhanced thermal conductivity. For example, at a St/BN feeding ratio of 5:1, an enhancement ratio of 1375% is achieved in comparison with pure PS. Moreover, the dielectric properties of the nanocomposites show a desirable weak dependence on frequency, and the dielectric loss tangent of the nanocomposites remains at a very low level. More importantly, the nanocomposites can be subjected to multiple melt processing to form different shapes. Our method can become a universal approach to prepare thermally conductive, electrically insulating and melt-processable polymer nanocomposites with diverse monomers and nanofillers.

Thermal conductivity reduction through isotope substitution in nanomaterials: predictions from an analytical classical model and nonequilibrium molecular dynamics simulations

We introduce an analytical model to rapidly determine the thermal conductivity reduction due to mass disorder in nanomaterials. Although this simplified classical model depends only on the masses of the different atoms, it adequately describes the changes in thermal transport as the concentrations of these atoms vary. Its predictions compare satisfactorily with nonequilibrium molecular dynamics simulations of the thermal conductivity of (14)C-(12)C carbon nanotubes as well as with previous simulations of other materials. We present it as a simple tool to quantitatively estimate the thermal conductivity decrease that is induced by isotope substitution in various materials.

Enhanced thermopower of graphene films with oxygen plasma treatment

In this work, we show that the maximum thermopower of few layers graphene (FLG) films could be greatly enhanced up to ∼700 μV/K after oxygen plasma treatment. The electrical conductivities of these plasma treated FLG films remain high, for example, ∼10(4) S/m, which results in power factors as high as ∼4.5 × 10(-3) W K(-2) m(-1). In comparison, the pristine FLG films show a maximum thermopower of ∼80 μV/K with an electrical conductivity of ∼5 × 10(4) S/m. The proposed mechanism is due to generation of local disordered carbon that opens the band gap. Measured thermopowers of single-layer graphene (SLG) films and reduced graphene oxide (rGO) films were in the range of -40 to 50 and -10 to 20 μV/K, respectively. However, such oxygen plasma treatment is not suitable for SLG and rGO films. The SLG films were easily destroyed during the treatment while the electrical conductivity of rGO films is too low.

Thermal transport in hexagonal boron nitride nanoribbons

The thermal transport properties of hexagonal boron nitride nanoribbons (BNNRs) are investigated. By calculating the phonon spectrum and thermal conductance, it is found that the BNNRs possess excellent thermal transport properties. The thermal conductance of BNNRs can be comparable to that of graphene nanoribbons (GNRs) and even exceed the latter below room temperature. A fitting formula is obtained to describe the features of thermal conductance in BNNRs, which reveals a critical role of the T(1.5) dependence in determining the thermal transport. In addition, an obviously anisotropic thermal transport phenomenon is observed in the nanoribbons. The thermal conductivity of zigzag-edged BNNRs is shown to be about 20% larger than that of armchair-edged nanoribbons at room temperature. The findings indicate that the BNNRs can be applied as important components of excellent thermal devices.