1
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Tian M, Xu L, Dan H, Yang Y. Extended linear detection range of a Bi 0.5Na 0.5TiO 3 thin film-based self-powered UV photodetector via current and voltage dual indicators. NANOSCALE HORIZONS 2022; 7:1240-1249. [PMID: 35971913 DOI: 10.1039/d2nh00204c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials are widely recognized for their ability to generate photovoltaic voltages larger than their bandgap, making them ideal candidates for photodetector applications. Here, we report a self-powered UV photodetector based on a Bi0.5Na0.5TiO3 (BNT) thin film prepared by the sol-gel method. Compared with conventional photodetectors based on a single detection indicator, the demonstrated photodetector realizes UV light intensity detection over a wide linear range using a current and voltage dual indicator detection method. When the UV light intensity is lower than 1.8 mW cm-2, the voltage can be used to detect the light signal. Conversely, the current can be utilized to detect the signal. This method not only broadens the linear detection range of UV light intensity, making it possible to detect weak UV light of 45.2 nW cm-2, but also allows the detector to maintain relatively high sensitivity within the detectable range. To investigate the distribution of spatial UV light intensity, a self-powered photodetector array system has been utilized to record the output voltage signals as a map.
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Affiliation(s)
- Mingyue Tian
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
| | - Lan Xu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
| | - Huiyu Dan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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2
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Yang X, Zhan Q. Investigation on the electrical and optical properties of forsterite Mg2SiO4 under pressure up to 30 GPa. MOLECULAR SIMULATION 2020. [DOI: 10.1080/08927022.2020.1714611] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- Xiaohong Yang
- Jiangxi Science and Technology University, Nanchang, People’s Republic of China
| | - Qinghua Zhan
- Jiangxi Science and Technology University, Nanchang, People’s Republic of China
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3
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Sun Y, Dong T, Yu L, Xu J, Chen K. Planar Growth, Integration, and Applications of Semiconducting Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903945. [PMID: 31746050 DOI: 10.1002/adma.201903945] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Revised: 10/05/2019] [Indexed: 06/10/2023]
Abstract
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
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Affiliation(s)
- Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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4
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Su M, Zhang T, Su J, Wang Z, Hu Y, Gao Y, Gu H, Zhang X. Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications. OPTICS EXPRESS 2019; 27:A1207-A1215. [PMID: 31510509 DOI: 10.1364/oe.27.0a1207] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2019] [Accepted: 07/03/2019] [Indexed: 06/10/2023]
Abstract
ZnO is a promising short-wavelength light-emitting materials for its wide bandgap (3.37 eV) and large exciton binding energy (∼60 meV), however, practical p-type doped ZnO is the main challenge in this field. Here, Blue light-emitting diodes (LEDs) based on the homogeneous junctions of Sb doped ZnO nanowire arrays grown on Ga doped ZnO single crystal substrate are fabricated. Element analysis, FET and Hall-effect measurements demonstrate that the Sb atom has been successfully doped into ZnO nanowires to from p-type conductivity. On the benefit of high quality of nano-size homojunction, the fabricated LED shows low turn-on voltage turn-on voltage as low as 3.4 V and strong blue emission peak located at 425 nm at room temperature, which originate from interfacial recombination of ZnO nanowire p-n homojunctions. The present blue LED based on ZnO material may have potential applications in short-wavelength optoelectronic devices.
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5
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Deka Boruah B. Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors. NANOSCALE ADVANCES 2019; 1:2059-2085. [PMID: 36131964 PMCID: PMC9416854 DOI: 10.1039/c9na00130a] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Accepted: 03/28/2019] [Indexed: 05/14/2023]
Abstract
Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.
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Affiliation(s)
- Buddha Deka Boruah
- Institute for Manufacturing, Department of Engineering, University of Cambridge UK CB3 0FS
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6
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Liu D, Li HJ, Gao J, Zhao S, Zhu Y, Wang P, Wang D, Chen A, Wang X, Yang J. High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions. NANOSCALE RESEARCH LETTERS 2018; 13:261. [PMID: 30167797 PMCID: PMC6117230 DOI: 10.1186/s11671-018-2672-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2018] [Accepted: 08/17/2018] [Indexed: 05/25/2023]
Abstract
A novel isotype heterojunction ultraviolet photodetector was fabricated by growing n-ZnO nanorod arrays on n-GaN thin films and then spin-coated with graphene quantum dots (GQDs). Exposed to UV illumination with a wavelength of 365 nm, the time-dependent photoresponse of the hybrid detectors manifests high sensitivity and consistent transients with a rise time of 100 ms and a decay time of 120 ms. Meanwhile, an ultra-high specific detectivity (up to ~ 1012 Jones) and high photoresponsivity (up to 34 mA W-1) are obtained at 10 V bias. Compared to the bare heterojunction detectors, the excellent performance of the GQDs decorated n-ZnO/n-GaN heterostructure is attributed to the efficient immobilization of GQDs on the ZnO nanorod arrays. GQDs were exploited as a light absorber and act like an electron donor to effectively improve the effective carrier concentration in interfacial junction. Moreover, appropriate energy band alignment in GQDs decorated ZnO/GaN hybrids can also be a potential factor in facilitating the UV-induced photocurrent and response speed.
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Affiliation(s)
- Deshuai Liu
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
| | - Hui-Jun Li
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
| | - Jinrao Gao
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
| | - Shuang Zhao
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
- Hong Kong Beida Jade Bird Display Ltd, Shanghai, 201306, China
| | - Yuankun Zhu
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
- Hong Kong Beida Jade Bird Display Ltd, Shanghai, 201306, China
| | - Ping Wang
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
- Shanghai Innovation Institute for Materials, Shanghai, 200444, China
| | - Ding Wang
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
- Shanghai Innovation Institute for Materials, Shanghai, 200444, China
| | - Aiying Chen
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
| | - Xianying Wang
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China.
- Shanghai Innovation Institute for Materials, Shanghai, 200444, China.
| | - Junhe Yang
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai, 200093, China
- Shanghai Innovation Institute for Materials, Shanghai, 200444, China
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7
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Sarkar S, Das Mahapatra A, Basak D. Self-powered highly enhanced broad wavelength (UV to visible) photoresponse of ZnO@ZnO1−xSx@ZnS core–shell heterostructures. J Colloid Interface Sci 2018; 523:245-253. [PMID: 29626762 DOI: 10.1016/j.jcis.2018.03.110] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2018] [Revised: 03/29/2018] [Accepted: 03/30/2018] [Indexed: 11/16/2022]
Affiliation(s)
- Sanjit Sarkar
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Ayon Das Mahapatra
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
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8
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Teng F, Hu K, Ouyang W, Fang X. Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706262. [PMID: 29888448 DOI: 10.1002/adma.201706262] [Citation(s) in RCA: 107] [Impact Index Per Article: 17.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2017] [Revised: 01/18/2018] [Indexed: 05/03/2023]
Abstract
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.
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Affiliation(s)
- Feng Teng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Kai Hu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Weixin Ouyang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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9
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Lord AM, Evans JE, Barnett CJ, Allen MW, Barron AR, Wilks SP. Surface sensitivity of four-probe STM resistivity measurements of bulk ZnO correlated to XPS. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:384001. [PMID: 28678024 DOI: 10.1088/1361-648x/aa7dc8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Multi-probe instruments based on scanning tunnelling microscopy (STM) are becoming increasingly common for their ability to perform nano- to atomic-scale investigations of nanostructures, surfaces and in situ reactions. A common configuration is the four-probe STM often coupled with in situ scanning electron microscopy (SEM) that allows precise positioning of the probes onto surfaces and nanostructures enabling electrical and scanning experiments to be performed on highly localised regions of the sample. In this paper, we assess the sensitivity of four-probe STM for in-line resistivity measurements of the bulk ZnO surface. The measurements allow comparisons to established models that are used to relate light plasma treatments (O and H) of the surfaces to the resistivity measurements. The results are correlated to x-ray photoelectron spectroscopy (XPS) and show that four-probe STM can detect changes in surface and bulk conduction mechanisms that are beyond conventional monochromatic XPS.
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Affiliation(s)
- Alex M Lord
- Centre for NanoHealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP, United Kingdom
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10
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Vabbina PK, Sinha R, Ahmadivand A, Karabiyik M, Gerislioglu B, Awadallah O, Pala N. Sonochemical Synthesis of a Zinc Oxide Core-Shell Nanorod Radial p-n Homojunction Ultraviolet Photodetector. ACS APPLIED MATERIALS & INTERFACES 2017; 9:19791-19799. [PMID: 28534394 DOI: 10.1021/acsami.7b02634] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report for the first time on the growth of a homogeneous radial p-n junction in the ZnO core-shell configuration with a p-doped ZnO nanoshell structure grown around a high-quality unintentionally n-doped ZnO nanorod using sonochemistry. The simultaneous decomposition of phosphorous (P), zinc (Zn), and oxygen (O) from their respective precursors during sonication allows for the successful incorporation of P atoms into the ZnO lattice. The as-formed p-n junction shows a rectifying current-voltage characteristic that is consistent with a p-n junction with a threshold voltage of 1.3 V and an ideality factor of 33. The concentration of doping was estimated to be NA = 6.7 × 1017 cm-3 on the p side from the capacitance-voltage measurements. The fabricated radial p-n junction demonstrated a record optical responsivity of 9.64 A/W and a noise equivalent power of 0.573 pW/√Hz under ultraviolet illumination, which is the highest for ZnO p-n junction devices.
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Affiliation(s)
- Phani Kiran Vabbina
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Raju Sinha
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Arash Ahmadivand
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Mustafa Karabiyik
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Burak Gerislioglu
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Osama Awadallah
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Nezih Pala
- INSYST Laboratory, Electrical and Computer Engineering, and ‡Advance Ceramic Group, Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
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11
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Li C, Wang S, Zhang X, Jia N, Yu T, Zhu M, Liu D, Tao X. Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals. CrystEngComm 2017. [DOI: 10.1039/c7ce01676j] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Seeded flux growth of bulk o-SiP single crystals with a layered structure, clear photo-switching behavior and relatively fast response.
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Affiliation(s)
- Chunlong Li
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
- Key Laboratory of Functional Crystal Materials and Devices
| | - Xixia Zhang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Ning Jia
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Tongtong Yu
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Min Zhu
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Duo Liu
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
- Key Laboratory of Functional Crystal Materials and Devices
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12
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Qin X, Li G, Xiao L, Chen G, Wang K, Wang Q. Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film. NANOSCALE RESEARCH LETTERS 2016; 11:274. [PMID: 27251324 PMCID: PMC4889532 DOI: 10.1186/s11671-016-1485-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2016] [Accepted: 05/16/2016] [Indexed: 05/20/2023]
Abstract
Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.
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Affiliation(s)
- Xuesi Qin
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China
| | - Guojian Li
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China.
| | - Lin Xiao
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China
| | - Guozhen Chen
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China
| | - Kai Wang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China
| | - Qiang Wang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China
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13
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Zhu Y, Yang H, Sun F, Wang X. Controllable Growth of Ultrathin P-doped ZnO Nanosheets. NANOSCALE RESEARCH LETTERS 2016; 11:175. [PMID: 27033851 PMCID: PMC4816943 DOI: 10.1186/s11671-016-1379-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2016] [Accepted: 03/16/2016] [Indexed: 06/05/2023]
Abstract
Ultrathin phosphor (P)-doped ZnO nanosheets with branched nanowires were controllably synthesized, and the effects of oxygen and phosphor doping on the structural and optical properties were systematically studied. The grown ZnO nanosheet exhibits an ultrathin nanoribbon backbone with one-side-aligned nanoteeth. For the growth of ultrathin ZnO nanosheets, both oxygen flow rate and P doping are essential, by which the morphologies and microstructures can be finely tuned. P doping induces strain relaxation to change the growth direction of ZnO nanoribbons, and oxygen flow rate promotes the high supersaturation degree to facilitate the growth of nanoteeth and widens the nanoribbons. The growth of P-doped ZnO in this work provides a new progress towards the rational control of the morphologies for ZnO nanostructures.
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Affiliation(s)
- Yuankun Zhu
- School of Materials Science and Technology, University of Shanghai for Science and Technology, Shanghai, 200093 China
| | - Hengyan Yang
- School of Materials Science and Technology, University of Shanghai for Science and Technology, Shanghai, 200093 China
| | - Feng Sun
- School of Materials Science and Technology, University of Shanghai for Science and Technology, Shanghai, 200093 China
| | - Xianying Wang
- School of Materials Science and Technology, University of Shanghai for Science and Technology, Shanghai, 200093 China
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14
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Zhang X, Liu B, Yang W, Jia W, Li J, Jiang C, Jiang X. 3D-branched hierarchical 3C-SiC/ZnO heterostructures for high-performance photodetectors. NANOSCALE 2016; 8:17573-17580. [PMID: 27714167 DOI: 10.1039/c6nr06236a] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The ultra-sensitive photodetection of different wavelengths holds promising applications in high-performance optoelectronic devices and it requires an efficient and suitable semiconductor unit. Herein, we demonstrated the designable synthesis of 3D-branched hierarchical 3C-SiC/ZnO heterostructures by a three-step process and their assembling into an ultrasensitive photodetector. Microstructure analyses using high-resolution transmission electron microscopy reveal that the hierarchical 3C-SiC/ZnO heterostructure is composed of single-crystal 3C-SiC nanowires as a central stem and numerous well-aligned single-crystalline ZnO nanorods as branch shells. Optoelectronic tests on the 3C-SiC/ZnO heterostructure photodetector verify the outstanding photo-detection performance with an ultrahigh EQE (1.69 × 108%), a superior photoresponsivity (4.8 × 105 A W-1), a very fast response time (a rise time of 40 ms and a decay time of 60 ms), a high photo-dark current ratio of 187.8 and an excellent photocurrent stability and reproducibility, which is significantly advantageous or comparable to those of ZnO and other inorganic semiconductor nanostructure based photodetectors. To understand the excellent photodetection of hierarchical 3C-SiC/ZnO heterostructures, a band-gap energy diagram describing the photogenerated electron transport process is plotted and the corresponding mechanism is discussed. The strategy proposed in the present work will open up more opportunities for the design and boost of ultra-sensitive photodetectors based on semiconductor heterostructures.
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Affiliation(s)
- Xinglai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, Liaoning, China.
| | - Baodan Liu
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, Liaoning, China.
| | - Wenjin Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, Liaoning, China.
| | - Wenbo Jia
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, Liaoning, China.
| | - Jing Li
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, Liaoning, China.
| | - Chunhai Jiang
- Institute of Advanced Energy Materials, School of Materials Science and Engineering, Xiamen University of Technology, and Key Laboratory of Functional Materials and Applications of Fujian Province, 600 Ligong Road, Jimei District, Xiamen 361024, Fujian, China.
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, Liaoning, China.
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Sarkar S, Basak D. Self Powered Highly Enhanced Dual Wavelength ZnO@CdS Core-Shell Nanorod Arrays Photodetector: An Intelligent Pair. ACS APPLIED MATERIALS & INTERFACES 2015; 7:16322-9. [PMID: 26154060 DOI: 10.1021/acsami.5b03184] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
On the face of the impending energy crisis, developing low-energy or even zero-energy photoelectronic devices is extremely important. A multispectral photosensitivity feature of a self-powered device provides an additional powerful tool. We have developed an unprecedented high performance dual wavelength self-powered ZnO@CdS/PEDOT:PSS core-shell nanorods array photodetector through a simple aqueous chemical method wherein a suitable band alignment between an intelligent material pair, i.e. ZnO and CdS, has been utilized. Besides a noteworthy advantage of the devices being that they show a very sharp and prominent dual wavelength photosensitivity, both the ultraviolet and visible light sensitivity (ratio of current under illumination (Iphoto)/current under dark (Idark)) of the device are two orders of higher magnitude than those of pristine ZnO, attaining values of 2.8 × 10(3) and 1.07 × 10(3), respectively. At the same time, temporal responses faster than 20 ms could be achieved with these solution-processed photodetectors. The present study provides a very important direction to engineer core-shell nanostructured devices for dual wavelength high photosensitivity.
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Affiliation(s)
- Sanjit Sarkar
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032, India
| | - Durga Basak
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032, India
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16
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Dang VQ, Trung TQ, Kim DI, Duy LT, Hwang BU, Lee DW, Kim BY, Toan LD, Lee NE. Ultrahigh Responsivity in Graphene-ZnO Nanorod Hybrid UV Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:3054-65. [PMID: 25703808 DOI: 10.1002/smll.201403625] [Citation(s) in RCA: 64] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2014] [Revised: 01/18/2015] [Indexed: 05/27/2023]
Abstract
Ultraviolet (UV) photodetectors based on ZnO nanostructure/graphene (Gr) hybrid-channel field-effect transistors (FETs) are investigated under illumination at various incident photon intensities and wavelengths. The time-dependent behaviors of hybrid-channel FETs reveal a high sensitivity and selectivity toward the near-UV region at the wavelength of 365 nm. The devices can operate at low voltage and show excellent selectivity, high responsivity (RI ), and high photoconductive gain (G). The change in the transfer characteristics of hybrid-channel FETs under UV light illumination allows to detect both photovoltage and photocurrent. The shift of the Dirac point (V Dirac ) observed during UV exposure leads to a clearer explanation of the response mechanism and carrier transport properties of Gr, and this phenomenon permits the calculation of electron concentration per UV power density transferred from ZnO nanorods and ZnO nanoparticles to Gr, which is 9 × 10(10) and 4 × 10(10) per mW, respectively. The maximum values of RI and G infer from the fitted curves of RI and G versus UV intensity are 3 × 10(5) A W(-1) and 10(6) , respectively. Therefore, the hybrid-channel FETs studied herein can be used as UV sensing devices with high performance and low power consumption, opening up new opportunities for future optoelectronic devices.
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Affiliation(s)
- Vinh Quang Dang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Tran Quang Trung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Do-Il Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Le Thai Duy
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Byeong-Ung Hwang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Doo-Won Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Bo-Yeong Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Le Duc Toan
- Department of Energy Science (DOES), Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
- Samsung Advanced Institute for Health Sciences and Technology (SAIHST), Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
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Hsu CL, Chang SJ. Doped ZnO 1D nanostructures: synthesis, properties, and photodetector application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:4562-85. [PMID: 25319960 DOI: 10.1002/smll.201401580] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2014] [Revised: 08/01/2014] [Indexed: 05/14/2023]
Abstract
In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.
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Affiliation(s)
- Cheng-Liang Hsu
- Departments of Electrical Engineering, National University of Tainan, Tainan, 700, Taiwan
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18
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Chiu HM, Chang YT, Wu WW, Wu JM. Synthesis and characterization of one-dimensional Ag-doped ZnO/Ga-doped ZnO coaxial nanostructure diodes. ACS APPLIED MATERIALS & INTERFACES 2014; 6:5183-5191. [PMID: 24620743 DOI: 10.1021/am500470y] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In the pursuit of high injection current diode nanodevices, entire one-dimensional (1D) ZnO coaxial nanostructures with p-n homojunctions is one of the ideal structures. In this study, we synthesized entire 1D ZnO-based coaxial homojunction diodes with p-type Ag-doped ZnO (SZO) nanostructure shells covering n-type Ga-doped ZnO (GZO) nanopagoda (NPG) cores by a metal-organic chemical vapor deposition (MOCVD) technique. The entire 1D SZO-GZO and SZO-ZnO coaxial nanostructures exhibit better diode characteristics, such as lower threshold voltage, better rectification ratios, and better ideality factor n, than that reported for either 2D or 2D-1D p-n heterojunction and/or homojunction diodes. The binding energies of Ga and Ag were evaluated by low-temperature and temperature-dependent photoluminescence. In comparison, the SZO-GZO coaxial p-n nanostructures display better diode performance than the SZO-ZnO ones.
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Affiliation(s)
- Hsien-Ming Chiu
- Department of Materials Science and Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan (ROC)
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19
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Sarkar S, Basak D. Defect mediated highly enhanced ultraviolet emission in P-doped ZnO nanorods. RSC Adv 2014. [DOI: 10.1039/c4ra05911e] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The enhancement in UVPL in hydrothermally grown P-doped ZnO is due to the formation of shallow acceptor PZn–2VZn complex defects.
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Affiliation(s)
- Sanjit Sarkar
- Department of Solid State Physics
- Indian Association for the Cultivation of Science
- Kolkata-700032, India
| | - Durga Basak
- Department of Solid State Physics
- Indian Association for the Cultivation of Science
- Kolkata-700032, India
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20
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Wang X, Tian W, Liao M, Bando Y, Golberg D. Recent advances in solution-processed inorganic nanofilm photodetectors. Chem Soc Rev 2014; 43:1400-22. [DOI: 10.1039/c3cs60348b] [Citation(s) in RCA: 126] [Impact Index Per Article: 12.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
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Cheng B, Xu J, Ouyang Z, Xie C, Su X, Xiao Y, Lei S. Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity. OPTICS EXPRESS 2013; 21:29719-29730. [PMID: 24514523 DOI: 10.1364/oe.21.029719] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
ZnO nanowires have relatively high sensitivity as ultraviolet (UV) photodetectors, while the bandgap of 3.37 eV is an important limitation for their applications in solar-blind UV (SBUV), visible (VIS) and near infrared (NIR) range. Besides UV response, in this study, we demonstrate the promising applications of individual undoped ZnO NWs as high performance SBUV-VIS-NIR broad-spectral-response photodetectors, strongly depended on applied bias voltage and illumination intensity. The dominant mechanism is attributed to the existence of surface states in nanostructured ZnO. At a negative bias voltage electrons can be injected into surface states from electrode, and moreover, under light illumination photogenerated electron-hole pairs can be separated efficiently by surface built-in electric field, resulting into a decrease of potential barrier height and depletion region width, and simultaneously accompanying a filling of oxygen vacancy and a rise of ZnO Fermi level.
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Tang X, Li G, Zhou S. Ultraviolet electroluminescence of light-emitting diodes based on single n-ZnO/p-AlGaN heterojunction nanowires. NANO LETTERS 2013; 13:5046-5050. [PMID: 24073683 DOI: 10.1021/nl401941g] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We present successful fabrication of single n-ZnO/p-AlGaN heterojunction nanowires with excellent optoelectronic properties. Because of the formation of high-quality interfacial structure, heterojunction nanowire showed a diodelike rectification behavior and an electroluminescence (EL) ultraviolet (UV) emission centered at 394 nm from a single nanowire was observed when the injection current is 4 μA due to high exciton efficiency in the interfacial layer between ZnO and AlGaN. With the increase of the applied current, the EL peak at 5 μA becomes weaker revealing an optimal injection current of less than 5 μA. These results are expected to open up new application possibilities in nanoscale UV light-emitting devices based on single ZnO heterostructure.
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Affiliation(s)
- Xiaobing Tang
- Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng 475004, People's Republic of China
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23
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Han L, Xu Z, Wang P, Dong S. Facile synthesis of a free-standing Ag@AgCl film for a high performance photocatalyst and photodetector. Chem Commun (Camb) 2013; 49:4953-5. [DOI: 10.1039/c3cc41798k] [Citation(s) in RCA: 45] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Cho HD, Zakirov AS, Yuldashev SU, Ahn CW, Yeo YK, Kang TW. Photovoltaic device on a single ZnO nanowire p-n homojunction. NANOTECHNOLOGY 2012; 23:115401. [PMID: 22383446 DOI: 10.1088/0957-4484/23/11/115401] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.
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Affiliation(s)
- Hak Dong Cho
- Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Korea
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25
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Yang X, Lu J, Zhang H, Chen Y, Kan B, Zhang J, Huang J, Lu B, Zhang Y, Ye Z. Preparation and XRD analyses of Na-doped ZnO nanorod arrays based on experiment and theory. Chem Phys Lett 2012. [DOI: 10.1016/j.cplett.2012.01.019] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2022]
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26
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Chen CY, Huang JH, Lai KY, Jen YJ, Liu CP, He JH. Giant optical anisotropy of oblique-aligned ZnO nanowire arrays. OPTICS EXPRESS 2012; 20:2015-24. [PMID: 22330442 DOI: 10.1364/oe.20.002015] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
A combined method of modified oblique-angle deposition and hydrothermal growth was adopted to grow an optically anisotropic nanomaterial based on single crystalline ZnO nanowire arrays (NWAs) with highly oblique angles (75°-85°), exhibiting giant in-plane birefringence and optical polarization degree in emission. The in-plane birefringence of oblique-aligned ZnO NWAs is almost one order of magnitude higher than that of natural quartz. The strong optical anisotropy in emission due to the optical confinement was observed. The oblique-aligned NWAs not only allow important technological applications in passive photonic components but also benefit the development of the optoelectronic devices in polarized light sensing and emission.
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Affiliation(s)
- Cheng-Ying Chen
- Institute of Photonics and Optoelectronics, & Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan
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27
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Liu B, Wang Z, Dong Y, Zhu Y, Gong Y, Ran S, Liu Z, Xu J, Xie Z, Chen D, Shen G. ZnO-nanoparticle-assembled cloth for flexible photodetectors and recyclable photocatalysts. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm16781f] [Citation(s) in RCA: 66] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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28
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Wang X, Xie Z, Huang H, Liu Z, Chen D, Shen G. Gas sensors, thermistor and photodetector based on ZnS nanowires. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm16523f] [Citation(s) in RCA: 123] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
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29
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Panigrahy B, Bahadur D. p-type Phosphorus doped ZnO nanostructures: an electrical, optical, and magnetic properties study. RSC Adv 2012. [DOI: 10.1039/c2ra20441j] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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Gao J, Zhao Q, Sun Y, Li G, Zhang J, Yu D. A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires. NANOSCALE RESEARCH LETTERS 2011; 6:45. [PMID: 27502667 PMCID: PMC3211869 DOI: 10.1007/s11671-010-9805-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2010] [Accepted: 09/14/2010] [Indexed: 05/15/2023]
Abstract
We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.
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Affiliation(s)
- Jingyun Gao
- State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China
| | - Qing Zhao
- State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China.
| | - Yanghui Sun
- State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China
| | - Guo Li
- State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China
| | - Jingmin Zhang
- State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China
| | - Dapeng Yu
- State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China.
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Kim K, Debnath PC, Lee DH, Kim S, Lee SY. Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires. NANOSCALE RESEARCH LETTERS 2011; 6:552. [PMID: 21985620 PMCID: PMC3212090 DOI: 10.1186/1556-276x-6-552] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2011] [Accepted: 10/10/2011] [Indexed: 05/27/2023]
Abstract
1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed laser deposition. After silver-doping process, SZO NWs show some change behaviors, including structural, electrical, and optical properties. In case of structural property, the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the electrical properties of SZO NWs are variously measured to be about 4.26 × 106, 1.34 × 106, and 3.04 × 105 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice.
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Affiliation(s)
- Kyoungwon Kim
- Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
- Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
| | - Pulak Chandra Debnath
- Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
- Department of Nanoelectronics, School of Engineering, University of Science and Technology, 52 Eoeun dong, Yuseong-gu, Daejeon 305-333, Republic of Korea
| | - Deuk-Hee Lee
- Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
- Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
| | - Sangsig Kim
- Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
| | - Sang Yeol Lee
- Department of Nanoelectronics, School of Engineering, University of Science and Technology, 52 Eoeun dong, Yuseong-gu, Daejeon 305-333, Republic of Korea
- Department of Semiconductor Engineering, Cheongju University, Cheongju, 360-764, Chungbuk, Korea
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Sun Y, Zhao Q, Gao J, Ye Y, Wang W, Zhu R, Xu J, Chen L, Yang J, Dai L, Liao ZM, Yu D. In situ growth, structure characterization, and enhanced photocatalysis of high-quality, single-crystalline ZnTe/ZnO branched nanoheterostructures. NANOSCALE 2011; 3:4418-4426. [PMID: 21931901 DOI: 10.1039/c1nr10922g] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Single-crystalline, high-quality branched ZnTe-core/ZnO-branch nanoheterostructures were synthesized by an in situ strategy in an environmental scanning electron microscope. Composition and structure characterization confirmed that ZnO nanowires were perfectly epitaxially grown on ZnTe nanowires as branches. Noticeably, growth temperature plays a crucial role in determining the density and diameter of the ZnO nanobranches on ZnTe nanowires: a higher growth temperature leads to ZnO nanowires with higher density and smaller diameter. It was demonstrated that ZnO nanobranches exhibited a selective nucleation behavior on distinct side facets of ZnTe nanowires. Highly ordered ZnO nanobranches were found epitaxially grown on {211} facet of ZnTe nanowires, while there was no ZnO nanowire growth on {110} facet of ZnTe nanowires. Using first-principles calculation, we found that surface energy of distinct side facets has a strong impact on ZnO nucleation, and confirm that {211} facet of ZnTe nanowires is energetically more favorable for ZnO nanowire growth than {110} facet, which is in good agreement with our experimental findings. Remarkably, such unique ZnTe/ZnO 3D branched nanowire heterostructures exhibited improved photocatalytic abilities, superior to ZnO nanowires and ZnTe nanowires, due to the much enhanced effective surface area of their unique architecture and effective electron-hole separation at the ZnTe/ZnO interfaces.
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Affiliation(s)
- Yanghui Sun
- State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, P. R. China
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Kim DC, Jung BO, Lee JH, Cho HK, Lee JY, Lee JH. Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers. NANOTECHNOLOGY 2011; 22:265506. [PMID: 21586813 DOI: 10.1088/0957-4484/22/26/265506] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
This study reports that the visible-blind ultraviolet (UV) photodetecting properties of ZnO nanowire based photodetectors were remarkably improved by introducing ultrathin insulating MgO layers between the ZnO nanowires and Si substrates. All layers were grown without pause by metal organic chemical vapor deposition and the density and vertical arrangement of the ZnO nanowires were strongly dependent on the thickness of the MgO layers. The sample in which an MgO layer with a thickness of 8 nm was inserted had high density nanowires with a vertical alignment and showed dramatically improved UV photosensing performance (photo-to-dark current ratio = 1344.5 and recovery time = 350 ms). The photoresponse spectrum revealed good visible-blind UV detectivity with a sharp cut off at 378 nm and a high UV/visible rejection ratio. A detailed discussion regarding the developed UV photosensing mechanism from the introduction of the i-MgO layers and highly dense nanowires in the n-ZnO nanowires/i-MgO/n-Si substrates structure is presented in this work.
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Affiliation(s)
- Dong Chan Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea
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Li L, Auer E, Liao M, Fang X, Zhai T, Gautam UK, Lugstein A, Koide Y, Bando Y, Golberg D. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts. NANOSCALE 2011; 3:1120-1126. [PMID: 21203645 DOI: 10.1039/c0nr00702a] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current ratio of up to 4 orders of magnitude. The photoresponse parameters such as photocurrent, response time, and quantum efficiency depend strongly on the intensity of light, the detector environment, and the nanobelt size. The photoresponse mechanism was discussed, which was mainly attributed to the band bending, surface traps, and distribution of traps in the bandgap. Present Ga2O3 nanobelts can be exploited for future applications in photo sensing, light-emitting diodes, and optical switches.
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Affiliation(s)
- Liang Li
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
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Liao KT, Shimpi P, Gao PX. Thermal oxidation of Cu nanofilm on three-dimensional ZnO nanorod arrays. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm10762c] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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36
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Li L, Lee PS, Yan C, Zhai T, Fang X, Liao M, Koide Y, Bando Y, Golberg D. Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In₂Ge₂O₇ nanobelts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:5145-5149. [PMID: 20859947 DOI: 10.1002/adma.201002608] [Citation(s) in RCA: 69] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Affiliation(s)
- Liang Li
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan.
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Bie YQ, Liao ZM, Wang PW, Zhou YB, Han XB, Ye Y, Zhao Q, Wu XS, Dai L, Xu J, Sang LW, Deng JJ, Laurent K, Leprince-Wang Y, Yu DP. Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:4284-7. [PMID: 20652900 DOI: 10.1002/adma.201000985] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Affiliation(s)
- Ya-Qing Bie
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, P. R. China
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Li Y, Paulsen A, Yamada I, Koide Y, Delaunay JJ. Bascule nanobridges self-assembled with ZnO nanowires as double Schottky barrier UV switches. NANOTECHNOLOGY 2010; 21:295502. [PMID: 20601760 DOI: 10.1088/0957-4484/21/29/295502] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
We report the fabrication of a double Schottky barrier (DSB) device by self-assembly of nanowires (NWs). The operating principle of the device is governed by the surface depletion effects of the NWs. High DSBs were formed at the contact interface of ZnO NWs self-assembled into bascule nanobridge (NB) structures. The bascule NB structures exhibited high sensitivity and fast response to UV illumination, having a photocurrent to dark current ratio > 10(4) and a recovery time as short as approximately 3 s. The enhanced UV photoresponse of the bascule NB structure is ascribed to the DSB, whose height is tunable with UV light, being high (approximately 0.77 eV) in dark and low under UV. The bascule NB structure provides a new type of optical switch for spectrally selective light sensing applications ranging from environmental monitoring to optical communication.
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Affiliation(s)
- Yanbo Li
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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39
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Cheng Y, Zhao Y, Zhang Y, Cao X. Preparation of SrAl2O4:Eu2+, Dy3+ fibers by electrospinning combined with sol–gel process. J Colloid Interface Sci 2010; 344:321-6. [DOI: 10.1016/j.jcis.2009.12.044] [Citation(s) in RCA: 57] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2009] [Revised: 12/02/2009] [Accepted: 12/23/2009] [Indexed: 11/24/2022]
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40
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Liu W, Xiu F, Sun K, Xie YH, Wang KL, Wang Y, Zou J, Yang Z, Liu J. Na-Doped p-Type ZnO Microwires. J Am Chem Soc 2010; 132:2498-9. [DOI: 10.1021/ja908521s] [Citation(s) in RCA: 111] [Impact Index Per Article: 7.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Wei Liu
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Faxian Xiu
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Ke Sun
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Ya-Hong Xie
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Kang L Wang
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Yong Wang
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Jin Zou
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Zheng Yang
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
| | - Jianlin Liu
- Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
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Dai W, Yang Q, Gu F, Tong L. ZnO subwavelength wires for fast-response mid-infrared detection. OPTICS EXPRESS 2009; 17:21808-21812. [PMID: 19997425 DOI: 10.1364/oe.17.021808] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Room temperature operating thermal detection for mid-infrared light based on ZnO subwavelength wires has been demonstrated. Electric resistance in ZnO wires increases linearly with the intensity of incident light. Noise equivalent power (NEP) of 5.8 microW/Hz(1/2) (at 1 kHz) with typical response times as fast as 1.3 ms is obtained at 10.6-microm wavelength. The sensitivity and response time of the detector are also found to be insensitive to the ambient.
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Affiliation(s)
- Wei Dai
- State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou, China
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