The birth of a type-II nanostructure: carrier localization and optical properties of isoelectronically doped CdSe:Te nanocrystals

Synthesis and Optical Properties of CdSeTe/CdZnS/ZnS Core/Shell Nanorods

Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue light-emitting NRs. However, the synthesis of NRs emitting in the deep red region, which can be used for accurate red LED displays and promoting plant growth, is currently less explored. Here, we report the synthesis of deep red CdSeTe/CdZnS/ZnS dot-in-rod core/shell NRs via a seeded growth method, where the doping of Te in the CdSe core can extend the NR emission to the deep red region. The rod-shaped CdZnS shell is grown over CdSeTe seeds. By growing a ZnS passivation shell, the CdSeTe/CdZnS/ZnS NRs exhibit a photoluminescence emission peak at 670 nm, a full width at a half maximum of 61 nm and a photoluminescence quantum yield of 45%. The development of deep red NRs can greatly extend the applications of anisotropic nanocrystals.

Blue-Emissive ZnSeTe Quantum Dots and Their Electroluminescent Devices

Over the last two decades, quantum-dot light-emitting diodes (QLEDs), also known as quantum dot (QD) electroluminescent devices, have gained prominence in next-generation display technologies, positioning them as potential alternatives to organic light-emitting diodes. Nonetheless, challenges persist in enhancing key device performances such as efficiency and lifetime, while those of blue QLEDs lag behind compared with green and red counterparts. In this Perspective, we discuss key factors affecting the photoluminescence characteristics of environmentally benign blue-emissive ternary ZnSeTe QDs, including composition, core/shell heterostructure, and surface ligand. Notably, we highlight the recent progress in breakthrough strategies to enhance blue QLED performance, examining the effects of the ZnSeTe QD attribute and device architecture on device performance. This Perspective offers insights into integrated aspects of QD material and device structure in overcoming challenges toward a high-performance blue ZnSeTe QLED.

Efficient and stable blue quantum dot light-emitting diode

The visualization of accurate colour information using quantum dots has been explored for decades, and commercial products employing environmentally friendly materials are currently available as backlights¹. However, next-generation electroluminescent displays based on quantum dots require the development of an efficient and stable cadmium-free blue-light-emitting device, which has remained a challenge because of the inferior photophysical properties of blue-light-emitting materials^2,3. Here we present the synthesis of ZnSe-based blue-light-emitting quantum dots with a quantum yield of unity. We found that hydrofluoric acid and zinc chloride additives are effective at enhancing luminescence efficiency by eliminating stacking faults in the ZnSe crystalline structure. In addition, chloride passivation through liquid or solid ligand exchange leads to slow radiative recombination, high thermal stability and efficient charge-transport properties. We constructed double quantum dot emitting layers with gradient chloride content in a light-emitting diode to facilitate hole transport, and the resulting device showed an efficiency at the theoretical limit, high brightness and long operational lifetime. We anticipate that our efficient and stable blue quantum dot light-emitting devices can facilitate the development of electroluminescent full-colour displays using quantum dots.

Near-field strong coupling of single quantum dots

Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.

From dilute isovalent substitution to alloying in CdSeTe nanoplatelets

Synthesis and spectroscopy of CdSe_xTe_(1–x) nanoplatelets going from the alloyed regime to dilute doping.

Cadmium chalcogenide nanoplatelet (NPL) synthesis has recently witnessed a significant advance in the production of more elaborate structures such as core/shell and core/crown NPLs. However, controlled doping in these structures has proved difficult because of the restrictive synthetic conditions required for 2D anisotropic growth. Here, we explore the incorporation of tellurium (Te) within CdSe NPLs with Te concentrations ranging from doping to alloying. For Te concentrations higher than ∼30%, the CdSe_xTe_(1–x) NPLs show emission properties characteristic of an alloyed material with a bowing of the band gap for increased concentrations of Te. This behavior is in line with observations in bulk samples and can be put in the context of the transition from a pure material to an alloy. In the dilute doping regime, CdSe:Te NPLs, in comparison to CdSe NPLs, show a distinct photoluminescence (PL) red shift and prolonged emission lifetimes (LTs) associated with Te hole traps which are much deeper than in bulk samples. Furthermore, single particle spectroscopy reveals dramatic modifications in PL properties. In particular, doped NPLs exhibit photon antibunching and emission dynamics significantly modified compared to undoped or alloyed NPLs.

Isoelectronically doped CdSe/Te nanoalloys as alternative solar cell materials: insight from computational analysis

CdSe/Te nanoalloy as a solar energy harvesting material.

Long-lived population inversion in isovalently doped quantum dots

Optical gain from colloidal quantum dots has been desired for several decades since their discovery. While gain from multiexcitations is by now well-established, nonradiative Auger recombination limits the lifetime of such population inversion in quantum dots. CdSe cores isovalently doped by one to few Te atoms capped with rod-shaped CdS are examined as a candidate system for enhanced stimulated emission properties. Emission depletion spectroscopy shows a behavior characteristic of 3-level gain systems in these quantum dots. This implies complete removal of the 2-fold degeneracy of the lowest energy electronic excitation due to the large repulsive exciton-exciton interaction in the doubly excited state. Using emission depletion measurements of the trap-associated emission from poorly passivated CdS quantum dots, we show that 3-level characteristics are typical of emission resulting from a band edge to trap state transition, but reveal subtle differences between the two systems. These results allow for unprecedented observation of long-lived population inversion from singly excited quantum dots.

Photophysics of Voltage Increase by Photoinduced Dipole Layers in Sensitized Solar Cells

Significant overpotentials between the sensitizer and both the electron and hole conductors hamper the performance of sensitized solar cells, leading to a reduced photovoltage. We show that by using properly designed type-II quantum dots (QDs) between the sensitizer and the hole conductor in thin absorber cells, it is possible to increase the open circuit voltage (Voc) by more than 100 mV. This increase is due to the formation of a photoinduced dipole (PID) layer. Photogenerated holes in the type-II QDs are retained in the core for a relatively long time, allowing for the accumulation of a positively charged layer. Negative charges are, in turn, injected and accumulated in the TiO2 anode, creating a dipole moment, which negatively shifts the TiO2 conduction band relative to the electrolyte. We study this phenomenon using a unique TiO2/CdSe/(ZnSe:Te/CdS)/polysulfide system, where the formation of a PID depends on the color of the illumination. The PID concept thus introduces a new design strategy, where the operating parameters of the solar cell can be manipulated separately.

Universal trapping mechanism in semiconductor nanocrystals

Size tunability of the optical properties and inexpensive synthesis make semiconductor nanocrystals one of the most promising and versatile building blocks for many modern applications such as lasers, single-electron transistors, solar cells, and biological labels. The performance of these nanocrystal-based devices is however compromised by efficient trapping of the charge carriers. This process exhibits different features depending on the nanocrystal material, surface termination, size, and trap location, leading to the assumption that different mechanisms are at play in each situation. Here we revolutionize this fragmented picture and provide a unified interpretation of trapping dynamics in semiconductor nanocrystals by identifying the origins of this so far elusive detrimental process. Our findings pave the way for a general suppression strategy, applicable to any system, which can lead to a simultaneous efficiency enhancement in all nanocrystal-based technologies.