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Cheng CC, Chen YJ, Lin SH, Wang HM, Lin GP, Chung TK. Magnetic-Field-Assisted Electric-Field-Induced Domain Switching of a Magnetic Single Domain in a Multiferroic/Magnetoelectric Ni Nanochevron/[Pb(Mg 1/3Nb 2/3)O 3] 0.68-[PbTiO 3] 0.32 (PMN-PT) Layered Structure. MICROMACHINES 2023; 15:36. [PMID: 38258155 PMCID: PMC10820072 DOI: 10.3390/mi15010036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 12/16/2023] [Accepted: 12/21/2023] [Indexed: 01/24/2024]
Abstract
We report the magnetic-field-assisted electric-field-controlled domain switching of a magnetic single domain in a multiferroic/magnetoelectric Ni nanochevrons/[Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN-PT) layered structure. Initially, a magnetic field was applied in the transverse direction across single-domain Ni nanochevrons to transform each of them into a two-domain state. Subsequently, an electric field was applied to the layered structure, exerting the converse magnetoelectric effect to transform/release the two-domain Ni nanochevrons into one of two possible single-domain states. Finally, the experimental results showed that approximately 50% of the single-domain Ni nanochevrons were switched permanently after applying our approach (i.e., the magnetization direction was permanently rotated by 180 degrees). These results mark important advancements for future nanoelectromagnetic systems.
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Affiliation(s)
- Chih-Cheng Cheng
- Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (C.-C.C.); (G.-P.L.)
- Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsinchu 310401, Taiwan
| | - Yu-Jen Chen
- Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (C.-C.C.); (G.-P.L.)
| | - Shin-Hung Lin
- Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (C.-C.C.); (G.-P.L.)
| | - Hsin-Min Wang
- Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (C.-C.C.); (G.-P.L.)
| | - Guang-Ping Lin
- Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (C.-C.C.); (G.-P.L.)
| | - Tien-Kan Chung
- Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (C.-C.C.); (G.-P.L.)
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Institute of Advanced Semiconductor, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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2
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Kong D, Kovács A, Charilaou M, Zheng F, Wang L, Han X, Dunin-Borkowski RE. Direct observation of tensile-strain-induced nanoscale magnetic hardening. Nat Commun 2023; 14:3963. [PMID: 37407558 DOI: 10.1038/s41467-023-39650-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 06/22/2023] [Indexed: 07/07/2023] Open
Abstract
Magnetoelasticity is the bond between magnetism and mechanics, but the intricate mechanisms via which magnetic states change due to mechanical strain remain poorly understood. Here, we provide direct nanoscale observations of how tensile strain modifies magnetic domains in a ferromagnetic Ni thin plate using in situ Fresnel defocus imaging, off-axis electron holography and a bimetallic deformation device. We present quantitative measurements of magnetic domain wall structure and its transformations as a function of strain. We observe the formation and dissociation of strain-induced periodic 180° magnetic domain walls perpendicular to the strain axis. The magnetization transformation exhibits stress-determined directional sensitivity and is reversible and tunable through the size of the nanostructure. In this work, we provide direct evidence for expressive and deterministic magnetic hardening in ferromagnetic nanostructures, while our experimental approach allows quantifiable local measurements of strain-induced changes in the magnetic states of nanomaterials.
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Affiliation(s)
- Deli Kong
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52428, Jülich, Germany
- School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, 100124, Beijing, China
| | - András Kovács
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52428, Jülich, Germany.
| | - Michalis Charilaou
- Department of Physics, University of Louisiana at Lafayette, 70504, Lafayette, Louisiana, USA
| | - Fengshan Zheng
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52428, Jülich, Germany
- Spin-X Institute, Electron Microscopy Center, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong-Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, 511442, Guangzhou, China
| | - Lihua Wang
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, 100124, Beijing, China
| | - Xiaodong Han
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, 100124, Beijing, China.
| | - Rafal E Dunin-Borkowski
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52428, Jülich, Germany
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3
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Pathak P, Yadav VK, Mallick D. Deterministic domain wall rotation in a strain mediated FeGaB/PMN-PT asymmetrical ring structure for manipulating trapped magnetic nanoparticles in a fluidic environment. RSC Adv 2023; 13:2820-2832. [PMID: 36756453 PMCID: PMC9847493 DOI: 10.1039/d3ra00150d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 01/10/2023] [Indexed: 01/19/2023] Open
Abstract
The manipulation of domain walls (DWs) in strain-mediated magnetoelectric (ME) heterostructures has attracted much attention recently, with potential applications in precise and location-specific manipulation of magnetic nanoparticles (MNPs). However, the manipulation ability in these structures is restricted to magnetostrictive circular ring structures only, where the required onion state is metastable, less thermally stable, and cannot be obtained easily. This work investigates the highly shape anisotropic FeGaB magnetostrictive elliptical ring structures of different aspect ratios and trackwidths on the PMN-PT piezoelectric substrate to manipulate fluid-borne MNPs using active control of DWs. The proposed model utilizes the attribute that the required onion state in a magnetostrictive elliptical ring is thermally stable and easily obtained compared to magnetostrictive circular ring structures. By varying the trackwidth of elliptical rings, nucleated DWs are rotated at different angles to capture and transport fluid-borne MNPs. Up to a critical trackwidth, DW rotation is predicted by dominant stress anisotropy energy that leads the rotation of DWs and attached MNPs toward the dominant tensile strain direction of PMN-PT with reversibility. Increasing the trackwidth beyond the critical trackwidth caused a complete 90° rotation of DWs and attached MNPs without reversibility and is given by dominant shape anisotropy energy. The fundamental relationship of capture probability with the size and velocity of injected MNPs is also demonstrated. The nucleation and rotation of DWs are predicated using the coupled elastodynamic and electrostatic Finite Difference Method (FDM) micromagnetic model. Dynamics of MNP capture and rotation are envisaged using an analytical model.
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Affiliation(s)
- Pankaj Pathak
- Department of Electrical Engineering, Indian Institute of Technology Delhi New Delhi-110016 India
| | - Vinit Kumar Yadav
- Department of Electrical Engineering, Indian Institute of Technology Delhi New Delhi-110016 India
| | - Dhiman Mallick
- Department of Electrical Engineering, Indian Institute of Technology Delhi New Delhi-110016 India
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4
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You R, Wu H, Pang W, Duan X. On-Chip Arbitrary Manipulation of Single Particles by Acoustic Resonator Array. Anal Chem 2022; 94:5392-5398. [PMID: 35319870 DOI: 10.1021/acs.analchem.2c00130] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Effective and arbitrary manipulation of particles in liquid has attracted substantial interest. Acoustic tweezers, a new and promising tool, exhibit high biocompatibility, universality, and precision but lack arbitrariness. In this work, we report a gigahertz (GHz) bulk acoustic streaming tweezer (AST)-based micro-manipulation platform capable of efficiently translating acoustic energy to fluid kinetic energy, creating a controllable, quick-response, and stable flow field and precisely, arbitrarily, and universally manipulating a single particle to move like a microrobot. Through controlling the radio frequency signals applied on these resonators, the intensity and direction of the acoustic streaming flow can be quickly and arbitrarily adjusted. Consequently, the particle dispersed at the bottom can be arbitrarily and steadily driven along the predesigned route to the target position by the acoustic streaming drag force (ASF). We utilized four resonators cooperated as a work group to manipulate single SiO2 particles to complete nearly uniform linear motions and U-shaped motions, as well as playing billiards and exploring a maze, demonstrating the enormous potential of this GHz AST-based single-particle manipulation platform for separation, assembly, sensing, enriching, transporting, and so forth.
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Affiliation(s)
- Rui You
- State Key Laboratory of Precision Measuring Technology and Instrument, College of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
| | - Hang Wu
- State Key Laboratory of Precision Measuring Technology and Instrument, College of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
| | - Wei Pang
- State Key Laboratory of Precision Measuring Technology and Instrument, College of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
| | - Xuexin Duan
- State Key Laboratory of Precision Measuring Technology and Instrument, College of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
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5
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Rana B, Mondal AK, Bandyopadhyay S, Barman A. Applications of nanomagnets as dynamical systems: I. NANOTECHNOLOGY 2021; 33:062007. [PMID: 34633310 DOI: 10.1088/1361-6528/ac2e75] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Accepted: 10/11/2021] [Indexed: 06/13/2023]
Abstract
When magnets are fashioned into nanoscale elements, they exhibit a wide variety of phenomena replete with rich physics and the lure of tantalizing applications. In this topical review, we discuss some of these phenomena, especially those that have come to light recently, and highlight their potential applications. We emphasize what drives a phenomenon, what undergirds the dynamics of the system that exhibits the phenomenon, how the dynamics can be manipulated, and what specific features can be harnessed for technological advances. For the sake of balance, we point out both advantages and shortcomings of nanomagnet based devices and systems predicated on the phenomena we discuss. Where possible, we chart out paths for future investigations that can shed new light on an intriguing phenomenon and/or facilitate both traditional and non-traditional applications.
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Affiliation(s)
- Bivas Rana
- Institute of Spintronics and Quantum Information, Faculty of Physics, Adam Mickiewicz University in Poznań, Uniwersytetu Poznanskiego 2, Poznań 61-614, Poland
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan
| | - Amrit Kumar Mondal
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
| | - Supriyo Bandyopadhyay
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, 23284, United States of America
| | - Anjan Barman
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
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6
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Zhou H, Shi S, Nian D, Cui S, Luo J, Qiu Y, Yang H, Zhu M, Yu G. Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures. NANOSCALE 2020; 12:14479-14486. [PMID: 32538417 DOI: 10.1039/d0nr02595j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Effective control of domain wall (DW) injection into magnetic nanowires is of great importance for future novel device applications in spintronics, and currently relies on magnetization switching by the local external magnetic field obtained from metal contact lines or a spin-transfer torque (STT) effect from spin-polarized current. However, the external field is an obstacle for realizing practical spintronic devices with all-electric operation, and high current density can occasionally damage the devices. In this work, voltage controlled in-plane magnetic DW injection into a magnetic nanowire in the strain-mediated multiferroic heterostructures is studied by means of fully coupled micromagnetic-mechanical Finite Element Method (FEM) simulations. We propose an engineered shaped nano-magnet on a piezoelectric thin film in which a 180° magnetization rotation in the DW injection region is accomplished with in-plane piezostrain and magnetic shape anisotropy, thereby, leading to a DW injection into the nanowire. In this architecture, we computationally demonstrate repeated creation of DWs by voltage-induced strains without using any magnetic fields. Our FEM simulation results demonstrated an ultralow area energy consumption per injection (∼52.48 mJ m-2), which is drastically lower than the traditional magnetic field and STT driven magnetization switching. A fast-overall injection time within ∼3.4 ns under continuous injection is also demonstrated. Further reduction of energy consumption and injection time can be achieved by optimization of the structure and material selections. The present design and computational analyses can provide an additional efficient method to realize low-power and high-speed spintronic and magnonic devices.
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Affiliation(s)
- Haomiao Zhou
- Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, and College of Information Engineering, China Jiliang University, Hangzhou, Zhejiang, People's Republic of China.
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7
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Filianina M, Hanke JP, Lee K, Han DS, Jaiswal S, Rajan A, Jakob G, Mokrousov Y, Kläui M. Electric-Field Control of Spin-Orbit Torques in Perpendicularly Magnetized W/CoFeB/MgO Films. PHYSICAL REVIEW LETTERS 2020; 124:217701. [PMID: 32530662 DOI: 10.1103/physrevlett.124.217701] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2020] [Revised: 04/03/2020] [Accepted: 04/29/2020] [Indexed: 06/11/2023]
Abstract
Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in thin perpendicularly magnetized CoFeB films can be tuned and even increased by electric-field generated piezoelectric strain. Using theoretical calculations, we uncover that the subtle interplay of spin-orbit coupling, crystal symmetry, and orbital polarization is at the core of the observed strain dependence of spin-orbit torques. Our results open a path to integrating two energy efficient spin manipulation approaches, the electric-field-induced strain and the current-induced magnetization switching, thereby enabling novel device concepts.
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Affiliation(s)
- Mariia Filianina
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Graduate School of Excellence Material Science in Mainz, 55099 Mainz, Germany
| | - Jan-Philipp Hanke
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - Kyujoon Lee
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
| | - Dong-Soo Han
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Center for Spintronics, Korea Institute for Science and Technology, 02792 Seoul, Republic of Korea
| | - Samridh Jaiswal
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Singulus Technology AG, 63796 Kahl am Main, Germany
| | - Adithya Rajan
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
| | - Gerhard Jakob
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Graduate School of Excellence Material Science in Mainz, 55099 Mainz, Germany
| | - Yuriy Mokrousov
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - Mathias Kläui
- Institute of Physics, Johannes Gutenberg University, 55099 Mainz, Germany
- Graduate School of Excellence Material Science in Mainz, 55099 Mainz, Germany
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8
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Gusev NS, Sadovnikov AV, Nikitov SA, Sapozhnikov MV, Udalov OG. Manipulation of the Dzyaloshinskii-Moriya Interaction in Co/Pt Multilayers with Strain. PHYSICAL REVIEW LETTERS 2020; 124:157202. [PMID: 32357040 DOI: 10.1103/physrevlett.124.157202] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Revised: 01/09/2020] [Accepted: 03/20/2020] [Indexed: 06/11/2023]
Abstract
Interfacial Dzyaloshinskii-Moriya interaction (DMI) is experimentally investigated in Pt/Co/Pt multilayer films under strain. A strong variation (from 0.1 to 0.8 mJ/m^{2}) of the DMI constant is demonstrated at ±0.1% in-plane uniaxial deformation of the films. The anisotropic strain induces strong DMI anisotropy. The DMI constant perpendicular to the strain direction changes sign, while the constant along the strain direction does not. Estimates show that the DMI can be controlled with an electric field in hybrid ferroelectric-ferromagnetic systems. So, the observed effect opens the way to control the DMI and eventually skyrmions with a voltage via a strain-mediated magnetoelectric coupling.
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Affiliation(s)
- N S Gusev
- Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia
| | - A V Sadovnikov
- Saratov State University, Saratov 410012, Russia
- Kotelnikov Institute of Radioengineering and Electronics RAS, Moscow, 125009, Russia
| | - S A Nikitov
- Saratov State University, Saratov 410012, Russia
- Kotelnikov Institute of Radioengineering and Electronics RAS, Moscow, 125009, Russia
| | - M V Sapozhnikov
- Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia
- Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
| | - O G Udalov
- Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia
- Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
- Department of Physics and Astronomy, California State University Northridge, Northridge, California 91330, USA
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9
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Wu CY, Yen SK. Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect. MATERIALS 2020; 13:ma13061384. [PMID: 32204309 PMCID: PMC7143246 DOI: 10.3390/ma13061384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2020] [Revised: 03/15/2020] [Accepted: 03/17/2020] [Indexed: 11/16/2022]
Abstract
Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices.
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Affiliation(s)
- Cheng-Yi Wu
- Correspondence: ; Tel.: +886-04-2284-0500 (ext. 609)
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10
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Xiao Z, Lo Conte R, Goiriena-Goikoetxea M, Chopdekar RV, Lambert CHA, Li X, N'Diaye AT, Shafer P, Tiwari S, Barra A, Chavez A, Mohanchandra KP, Carman GP, Wang KL, Salahuddin S, Arenholz E, Bokor J, Candler RN. Tunable Magnetoelastic Effects in Voltage-Controlled Exchange-Coupled Composite Multiferroic Microstructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6752-6760. [PMID: 31927947 DOI: 10.1021/acsami.9b20876] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The magnetoelectric properties of exchange-coupled Ni/CoFeB-based composite multiferroic microstructures are investigated. The strength and sign of the magnetoelastic effect are found to be strongly correlated with the ratio between the thicknesses of two magnetostrictive materials. In cases where the thickness ratio deviates significantly from one, the magnetoelastic behavior of the multiferroic microstructures is dominated by the thicker layer, which contributes more strongly to the observed magnetoelastic effect. More symmetric structures with a thickness ratio equal to one show an emergent interfacial behavior which cannot be accounted for simply by summing up the magnetoelastic effects occurring in the two constituent layers. This aspect is clearly visible in the case of ultrathin bilayers, where the exchange coupling drastically affects the magnetic behavior of the Ni layer, making the Ni/CoFeB bilayer a promising next-generation synthetic magnetic system entirely. This study demonstrates the richness and high tunability of composite multiferroic systems based on coupled magnetic bilayers compared to their single magnetic layer counterparts. Furthermore, because of the compatibility of CoFeB with present magnetic tunnel junction-based spintronic technologies, the reported findings are expected to be of great interest for the development of ultralow-power magnetoelectric memory devices.
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Affiliation(s)
- Z Xiao
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States
| | - R Lo Conte
- Department of Electrical Engineering and Computer Science , University of California, Berkeley , Berkeley 94720 , California , United States
| | - M Goiriena-Goikoetxea
- Department of Electrical Engineering and Computer Science , University of California, Berkeley , Berkeley 94720 , California , United States
- Department of Electricity and Electronics , University of the Basque Country , Leioa 48940 , Spain
| | - R V Chopdekar
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States
| | - C-H A Lambert
- Department of Electrical Engineering and Computer Science , University of California, Berkeley , Berkeley 94720 , California , United States
| | - X Li
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - A T N'Diaye
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States
| | - P Shafer
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States
| | - S Tiwari
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - A Barra
- Department of Mechanical and Aerospace Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - A Chavez
- Department of Mechanical and Aerospace Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - K P Mohanchandra
- Department of Mechanical and Aerospace Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - G P Carman
- Department of Mechanical and Aerospace Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - K L Wang
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
| | - S Salahuddin
- Department of Electrical Engineering and Computer Science , University of California, Berkeley , Berkeley 94720 , California , United States
| | - E Arenholz
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States
| | - J Bokor
- Department of Electrical Engineering and Computer Science , University of California, Berkeley , Berkeley 94720 , California , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States
| | - R N Candler
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
- Department of Mechanical and Aerospace Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States
- California NanoSystems Institute , Los Angeles 90095 , California , United States
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11
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Hu X, Torati SR, Kim H, Yoon J, Lim B, Kim K, Sitti M, Kim C. Multifarious Transit Gates for Programmable Delivery of Bio-functionalized Matters. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901105. [PMID: 31058439 DOI: 10.1002/smll.201901105] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Revised: 04/12/2019] [Indexed: 06/09/2023]
Abstract
Programmable delivery of biological matter is indispensable for the massive arrays of individual objects in biochemical and biomedical applications. Although a digital manipulation of single cells has been implemented by the integrated circuits of micromagnetophoretic patterns with current wires, the complex fabrication process and multiple current operation steps restrict its practical application for biomolecule arrays. Here, a convenient approach using multifarious transit gates is proposed, for digital manipulation of biofunctionalized microrobotic particles that can pass through the local energy barriers by a time-dependent pulsed magnetic field instead of multiple current wires. The multifarious transit gates including return, delay, and resistance linear gates, as well as dividing, reversed, and rectifying T-junction gates, are investigated theoretically and experimentally for the programmable manipulation of microrobotic particles. The results demonstrate that, a suitable angle of the gating field at a suitable time zone is crucial to implement digital operations at integrated multifarious transit gates along bifurcation paths to trap microrobotic particles in specific apartments, paving the way for flexible on-chip arrays of biomolecules and cells.
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Affiliation(s)
- Xinghao Hu
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
| | - Sri Ramulu Torati
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
| | - Hyeonseol Kim
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
| | - Jonghwan Yoon
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
| | - Byeonghwa Lim
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
| | - Kunwoo Kim
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
| | - Metin Sitti
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
| | - CheolGi Kim
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
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12
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Xiao Z, Khojah R, Chooljian M, Conte RL, Schneider JD, Fitzell K, Chopdekar RV, Wang Y, Scholl A, Chang J, Carman GP, Bokor J, Di Carlo D, Candler RN. Cytocompatible magnetostrictive microstructures for nano- and microparticle manipulation on linear strain response piezoelectrics. ACTA ACUST UNITED AC 2018. [DOI: 10.1088/2399-7532/aae4d7] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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13
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D'Souza N, Biswas A, Ahmad H, Fashami MS, Al-Rashid MM, Sampath V, Bhattacharya D, Abeed MA, Atulasimha J, Bandyopadhyay S. Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies. NANOTECHNOLOGY 2018; 29:442001. [PMID: 30052200 DOI: 10.1088/1361-6528/aad65d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.
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Affiliation(s)
- Noel D'Souza
- Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond VA 23284, United States of America
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Abeed MA, Atulasimha J, Bandyopadhyay S. Magneto-elastic switching of magnetostrictive nanomagnets with in-plane anisotropy: the effect of material defects. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:394001. [PMID: 30124433 DOI: 10.1088/1361-648x/aadb6a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find that the error probability increases significantly in the presence of the defect, indicating that magneto-elastic switching is particularly vulnerable to material imperfections. Curiously, there is a critical stress value that gives the lowest error probability in both defect-free and defective nanomagnets. The critical stress is much higher in defective nanomagnets than in defect-free ones. Since it is more difficult to generate the critical stress in small nanomagnets than in large nanomagnets (having the same energy barrier for thermal stability), it would be a challenge to downscale magneto-elastically switched nanomagnets in memory and other applications where reliable switching is required. This is likely to be further exacerbated by the presence of defects.
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Affiliation(s)
- Md Ahsanul Abeed
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, United States of America
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15
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16
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Xiao Z, Lo Conte R, Chen C, Liang CY, Sepulveda A, Bokor J, Carman GP, Candler RN. Bi-directional coupling in strain-mediated multiferroic heterostructures with magnetic domains and domain wall motion. Sci Rep 2018; 8:5207. [PMID: 29581531 PMCID: PMC5913354 DOI: 10.1038/s41598-018-23020-2] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2017] [Accepted: 03/05/2018] [Indexed: 11/28/2022] Open
Abstract
Strain-coupled multiferroic heterostructures provide a path to energy-efficient, voltage-controlled magnetic nanoscale devices, a region where current-based methods of magnetic control suffer from Ohmic dissipation. Growing interest in highly magnetoelastic materials, such as Terfenol-D, prompts a more accurate understanding of their magnetization behavior. To address this need, we simulate the strain-induced magnetization change with two modeling methods: the commonly used unidirectional model and the recently developed bidirectional model. Unidirectional models account for magnetoelastic effects only, while bidirectional models account for both magnetoelastic and magnetostrictive effects. We found unidirectional models are on par with bidirectional models when describing the magnetic behavior in weakly magnetoelastic materials (e.g., Nickel), but the two models deviate when highly magnetoelastic materials (e.g., Terfenol-D) are introduced. These results suggest that magnetostrictive feedback is critical for modeling highly magnetoelastic materials, as opposed to weaker magnetoelastic materials, where we observe only minor differences between the two methods' outputs. To our best knowledge, this work represents the first comparison of unidirectional and bidirectional modeling in composite multiferroic systems, demonstrating that back-coupling of magnetization to strain can inhibit formation and rotation of magnetic states, highlighting the need to revisit the assumption that unidirectional modeling always captures the necessary physics in strain-mediated multiferroics.
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Affiliation(s)
- Zhuyun Xiao
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California, 90095, USA
| | - Roberto Lo Conte
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, 94720, USA
| | - Cai Chen
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California, 90095, USA
| | - Cheng-Yen Liang
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California, 90095, USA
| | - Abdon Sepulveda
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California, 90095, USA
| | - Jeffrey Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, 94720, USA
| | - Gregory P Carman
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California, 90095, USA
| | - Robert N Candler
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California, 90095, USA.
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California, 90095, USA.
- California NanoSystems Institute, Los Angeles, California, 90095, USA.
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17
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Lo Conte R, Xiao Z, Chen C, Stan CV, Gorchon J, El-Ghazaly A, Nowakowski ME, Sohn H, Pattabi A, Scholl A, Tamura N, Sepulveda A, Carman GP, Candler RN, Bokor J. Influence of Nonuniform Micron-Scale Strain Distributions on the Electrical Reorientation of Magnetic Microstructures in a Composite Multiferroic Heterostructure. NANO LETTERS 2018; 18:1952-1961. [PMID: 29481758 DOI: 10.1021/acs.nanolett.7b05342] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Composite multiferroic systems, consisting of a piezoelectric substrate coupled with a ferromagnetic thin film, are of great interest from a technological point of view because they offer a path toward the development of ultralow power magnetoelectric devices. The key aspect of those systems is the possibility to control magnetization via an electric field, relying on the magneto-elastic coupling at the interface between the piezoelectric and the ferromagnetic components. Accordingly, a direct measurement of both the electrically induced magnetic behavior and of the piezo-strain driving such behavior is crucial for better understanding and further developing these materials systems. In this work, we measure and characterize the micron-scale strain and magnetic response, as a function of an applied electric field, in a composite multiferroic system composed of 1 and 2 μm squares of Ni fabricated on a prepoled [Pb(Mg1/3Nb2/3)O3]0.69-[PbTiO3]0.31 (PMN-PT) single crystal substrate by X-ray microdiffraction and X-ray photoemission electron microscopy, respectively. These two complementary measurements of the same area on the sample indicate the presence of a nonuniform strain which strongly influences the reorientation of the magnetic state within identical Ni microstructures along the surface of the sample. Micromagnetic simulations confirm these experimental observations. This study emphasizes the critical importance of surface and interface engineering on the micron-scale in composite multiferroic structures and introduces a robust method to characterize future devices on these length scales.
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Affiliation(s)
- Roberto Lo Conte
- Department of Electrical Engineering and Computer Science , University of California , Berkeley , California 94720 , United States
| | - Zhuyun Xiao
- Department of Electrical Engineering , University of California , Los Angeles , California 90095 , United States
| | - Cai Chen
- Department of Mechanical and Aerospace Engineering , University of California , Los Angeles , California 90095 , United States
| | - Camelia V Stan
- Advanced Light Source , Lawrence Berkeley National Lab , Berkeley , California 94720 , United States
| | - Jon Gorchon
- Department of Electrical Engineering and Computer Science , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Amal El-Ghazaly
- Department of Electrical Engineering and Computer Science , University of California , Berkeley , California 94720 , United States
| | - Mark E Nowakowski
- Department of Electrical Engineering and Computer Science , University of California , Berkeley , California 94720 , United States
| | - Hyunmin Sohn
- Department of Electrical Engineering , University of California , Los Angeles , California 90095 , United States
| | - Akshay Pattabi
- Department of Electrical Engineering and Computer Science , University of California , Berkeley , California 94720 , United States
| | - Andreas Scholl
- Advanced Light Source , Lawrence Berkeley National Lab , Berkeley , California 94720 , United States
| | - Nobumichi Tamura
- Advanced Light Source , Lawrence Berkeley National Lab , Berkeley , California 94720 , United States
| | - Abdon Sepulveda
- Department of Mechanical and Aerospace Engineering , University of California , Los Angeles , California 90095 , United States
| | - Gregory P Carman
- Department of Mechanical and Aerospace Engineering , University of California , Los Angeles , California 90095 , United States
| | - Robert N Candler
- Department of Electrical Engineering , University of California , Los Angeles , California 90095 , United States
- Department of Mechanical and Aerospace Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , Los Angeles , California 90095 , United States
| | - Jeffrey Bokor
- Department of Electrical Engineering and Computer Science , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
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18
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Ba Y, Liu Y, Li P, Wu L, Unguris J, Pierce DT, Yang D, Feng C, Zhang Y, Wu H, Li D, Chang Y, Zhang J, Han X, Cai J, Nan CW, Zhao Y. Spatially Resolved Electric-Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics. ADVANCED FUNCTIONAL MATERIALS 2018; 28:10.1002/adfm.201706448. [PMID: 31080382 PMCID: PMC6508615 DOI: 10.1002/adfm.201706448] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Electric-field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures is a promising way to realize fast and nonvolatile random-access memory with high density and low-power consumption. An important issue that has not been solved is the magnetic responses to different types of ferroelectric-domain switching. Here, for the first time three types of magnetic responses are reported induced by different types of ferroelectric domain switching with in situ electric fields in the CoFeB mesoscopic discs grown on PMN-PT(001), including type I and type II attributed to 109°, 71°/180° ferroelectric domain switching, respectively, and type III attributed to a combined behavior of multiferroelectric domain switching. Rotation of the magnetic easy axis by 90° induced by 109° ferroelectric domain switching is also found. In addition, the unique variations of effective magnetic anisotropy field with electric field are explained by the different ferroelectric domain switching paths. The spatially resolved study of electric-field control of magnetism on the mesoscale not only enhances the understanding of the distinct magnetic responses to different ferroelectric domain switching and sheds light on the path of ferroelectric domain switching, but is also important for the realization of low-power consumption and high-speed magnetic random-access memory utilizing these materials.
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Affiliation(s)
- You Ba
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Yan Liu
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
- Key Laboratory of Space Utilization, Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, Beijing 100094, China
| | - Peisen Li
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
- College of Mechatronics and Automation, National University of Defense Technology, Changsha 410073, China
| | - Liang Wu
- School of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
| | - John Unguris
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Daniel T. Pierce
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Danni Yang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Ce Feng
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Yike Zhang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Hao Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Dalai Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yuansi Chang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianwang Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ce-Wen Nan
- School of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
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19
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Xue X, Dong G, Zhou Z, Xian D, Hu Z, Ren W, Ye ZG, Chen W, Jiang ZD, Liu M. Voltage Control of Two-Magnon Scattering and Induced Anomalous Magnetoelectric Coupling in Ni-Zn Ferrite. ACS APPLIED MATERIALS & INTERFACES 2017; 9:43188-43196. [PMID: 29171255 DOI: 10.1021/acsami.7b15433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Controlling spin dynamics through modulation of spin interactions in a fast, compact, and energy-efficient way is compelling for its abundant physical phenomena and great application potential in next-generation voltage controllable spintronic devices. In this work, we report electric field manipulation of spin dynamics-the two-magnon scattering (TMS) effect in Ni0.5Zn0.5Fe2O4 (NZFO)/Pb(Mg2/3Nb1/3)-PbTiO3 (PMN-PT) multiferroic heterostructures, which breaks the bottleneck of magnetostatic interaction-based magnetoelectric (ME) coupling in multiferroics. An alternative approach allowing spin-wave damping to be controlled by external electric field accompanied by a significant enhancement of the ME effect has been demonstrated. A two-way modulation of the TMS effect with a large magnetic anisotropy change up to 688 Oe has been obtained, referring to a 24 times ME effect enhancement at the TMS critical angle at room temperature. Furthermore, the anisotropic spin-freezing behaviors of NZFO were first determined via identifying the spatial magnetic anisotropy fluctuations. A large spin-freezing temperature change of 160 K induced by the external electric field was precisely determined by electron spin resonance.
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Affiliation(s)
- Xu Xue
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Dan Xian
- Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an, 710049 Shaanxi, China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
- Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an, 710049 Shaanxi, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
- Department of Chemistry and 4D LABS, Simon Fraser University , Burnaby, British Columbia V5A 1S6, Canada
| | - Wei Chen
- Materials Science Division, Argonne National Laboratory , 9700 Cass Avenue, Lemont, Illinois 60439, United States
| | - Zhuang-De Jiang
- Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an, 710049 Shaanxi, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
- Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an, 710049 Shaanxi, China
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20
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Sanz-Hernández D, Hamans RF, Liao JW, Welbourne A, Lavrijsen R, Fernández-Pacheco A. Fabrication, Detection, and Operation of a Three-Dimensional Nanomagnetic Conduit. ACS NANO 2017; 11:11066-11073. [PMID: 29072836 DOI: 10.1021/acsnano.7b05105] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Three-dimensional (3D) nanomagnetic devices are attracting significant interest due to their potential for computing, sensing, and biological applications. However, their implementation faces great challenges regarding fabrication and characterization of 3D nanostructures. Here, we show a 3D nanomagnetic system created by 3D nanoprinting and physical vapor deposition, which acts as a conduit for domain walls. Domains formed at the substrate level are injected into a 3D nanowire, where they are controllably trapped using vectorial magnetic fields. A dark-field magneto-optical method for parallel, independent measurement of different regions in individual 3D nanostructures is also demonstrated. This work will facilitate the advanced study and exploitation of 3D nanomagnetic systems.
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Affiliation(s)
- Dédalo Sanz-Hernández
- Cavendish Laboratory, University of Cambridge , JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Ruben F Hamans
- Department of Applied Physics, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Jung-Wei Liao
- Cavendish Laboratory, University of Cambridge , JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Alexander Welbourne
- Cavendish Laboratory, University of Cambridge , JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Reinoud Lavrijsen
- Department of Applied Physics, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Amalio Fernández-Pacheco
- Cavendish Laboratory, University of Cambridge , JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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21
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Foerster M, Macià F, Statuto N, Finizio S, Hernández-Mínguez A, Lendínez S, Santos PV, Fontcuberta J, Hernàndez JM, Kläui M, Aballe L. Direct imaging of delayed magneto-dynamic modes induced by surface acoustic waves. Nat Commun 2017; 8:407. [PMID: 28864819 PMCID: PMC5581333 DOI: 10.1038/s41467-017-00456-0] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2016] [Accepted: 06/30/2017] [Indexed: 11/24/2022] Open
Abstract
The magnetoelastic effect—the change of magnetic properties caused by the elastic deformation of a magnetic material—has been proposed as an alternative approach to magnetic fields for the low-power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Here, we have studied the effect of dynamic strain accompanying a surface acoustic wave on magnetic nanostructures in thermal equilibrium. We have developed an experimental technique based on stroboscopic X-ray microscopy that provides a pathway to the quantitative study of strain waves and magnetization at the nanoscale. We have simultaneously imaged the evolution of both strain and magnetization dynamics of nanostructures at the picosecond time scale and found that magnetization modes have a delayed response to the strain modes, adjustable by the magnetic domain configuration. Our results provide fundamental insight into magnetoelastic coupling in nanostructures and have implications for the design of strain-controlled magnetostrictive nano-devices. Understanding the effects of local dynamic strain on magnetization may help the development of magnetic devices. Foerster et al. demonstrate stroboscopic imaging that allows the observation of both strain and magnetization dynamics in nickel when surface acoustic waves are driven in the substrate.
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Affiliation(s)
- Michael Foerster
- ALBA Synchrotron Light Source, 08290, Cerdanyola del Valles, Spain
| | - Ferran Macià
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Spain. .,Dept. of Condensed Matter Physics, University of Barcelona, 08028, Barcelona, Spain.
| | - Nahuel Statuto
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Spain.,Dept. of Condensed Matter Physics, University of Barcelona, 08028, Barcelona, Spain
| | - Simone Finizio
- Institut für Physik, Johannes Gutenberg Universität Mainz, 55099, Mainz, Germany.,Swiss Light Source, Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland
| | | | - Sergi Lendínez
- Dept. of Condensed Matter Physics, University of Barcelona, 08028, Barcelona, Spain
| | - Paulo V Santos
- Paul-Drude-Institut fur Festkörperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany
| | - Josep Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Spain
| | - Joan Manel Hernàndez
- Dept. of Condensed Matter Physics, University of Barcelona, 08028, Barcelona, Spain
| | - Mathias Kläui
- Institut für Physik, Johannes Gutenberg Universität Mainz, 55099, Mainz, Germany
| | - Lucia Aballe
- ALBA Synchrotron Light Source, 08290, Cerdanyola del Valles, Spain
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22
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Architecture for Directed Transport of Superparamagnetic Microbeads in a Magnetic Domain Wall Routing Network. Sci Rep 2017; 7:10139. [PMID: 28860460 PMCID: PMC5579241 DOI: 10.1038/s41598-017-10149-9] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2017] [Accepted: 08/04/2017] [Indexed: 11/08/2022] Open
Abstract
Directed transport of biological species across the surface of a substrate is essential for realizing lab-on-chip technologies. Approaches that utilize localized magnetic fields to manipulate magnetic particles carrying biological entities are attractive owing to their sensitivity, selectivity, and minimally disruptive impact on biomaterials. Magnetic domain walls in magnetic tracks produce strong localized fields and can be used to capture, transport, and detect individual superparamagnetic microbeads. The dynamics of magnetic microbead transport by domain walls has been well studied. However, demonstration of more complex functions such as selective motion and sorting using continuously driven domain walls in contiguous magnetic tracks is lacking. Here, a junction architecture is introduced that allows for branching networks in which superparamagnetic microbeads can be routed along dynamically-selected paths by a combination of rotating in-plane field for translation, and a pulsed out-of-plane field for path selection. Moreover, experiments and modeling show that the select-field amplitude is bead-size dependent, which allows for digital sorting of multiple bead populations using automated field sequences. This work provides a simple means to implement complex routing networks and selective transport functionalities in chip-based devices using magnetic domain wall conduits.
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23
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Deterministic control of magnetic vortex wall chirality by electric field. Sci Rep 2017; 7:7613. [PMID: 28790365 PMCID: PMC5548751 DOI: 10.1038/s41598-017-07944-9] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2017] [Accepted: 07/05/2017] [Indexed: 11/17/2022] Open
Abstract
Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing.
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Cui J, Keller SM, Liang CY, Carman GP, Lynch CS. Nanoscale magnetic ratchets based on shape anisotropy. NANOTECHNOLOGY 2017; 28:08LT01. [PMID: 28054511 DOI: 10.1088/1361-6528/aa56d4] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Controlling magnetization using piezoelectric strain through the magnetoelectric effect offers several orders of magnitude reduction in energy consumption for spintronic applications. However strain is a uniaxial effect and, unlike directional magnetic field or spin-polarized current, cannot induce a full 180° reorientation of the magnetization vector when acting alone. We have engineered novel 'peanut' and 'cat-eye' shaped nanomagnets on piezoelectric substrates that undergo repeated deterministic 180° magnetization rotations in response to individual electric-field-induced strain pulses by breaking the uniaxial symmetry using shape anisotropy. This behavior can be likened to a magnetic ratchet, advancing magnetization clockwise with each piezostrain trigger. The results were validated using micromagnetics implemented in a multiphysics finite elements code to simulate the engineered spatial and temporal magnetic behavior. The engineering principles start from a target device function and proceed to the identification of shapes that produce the desired function. This approach opens a broad design space for next generation magnetoelectric spintronic devices.
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25
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Rampini S, Li P, Lee GU. Micromagnet arrays enable precise manipulation of individual biological analyte-superparamagnetic bead complexes for separation and sensing. LAB ON A CHIP 2016; 16:3645-63. [PMID: 27542153 DOI: 10.1039/c6lc00707d] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
In this article, we review lab on a chip (LOC) devices that have been developed for processing magnetically labelled biological analytes, e.g., proteins, nucleic acids, viruses and cells, based on micromagnetic structures and a time-varying magnetic field. We describe the methods that have been developed for fabricating micromagnetic arrays and the bioprocessing operations that have been demonstrated using superparamagnetic (SPM) beads, i.e., programmed transport, switching, separation of specific analytes, and pumping and mixing of fluids in microchannels. The primary advantage of micromagnet devices is that they make it possible to develop systems that control individual SPM beads, enabling high-efficiency separation and analysis. These devices do not require hydrodynamic control and lend themselves to parallel processing of large arrays of SPM beads with modest levels of power consumption. Micromagnet devices are well suited for bioanalytical applications that require high-resolution separation, e.g., detection of rare cell types such as circulating tumour cells, or biosensor applications that require multiple magnetic bioprocessing operations on a single chip.
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Affiliation(s)
- S Rampini
- School of Chemistry and Chemical Biology, UCD, Dublin, Ireland.
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Gilbert I, Chavez AC, Pierce DT, Unguris J, Sun WY, Liang CY, Carman GP. Magnetic microscopy and simulation of strain-mediated control of magnetization in Ni/PMN-PT nanostructures. APPLIED PHYSICS LETTERS 2016; 109:162404. [PMID: 28065981 PMCID: PMC5207223 DOI: 10.1063/1.4965028] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of nanostructures fabricated from these materials is limited. Here we characterize ferromagnetic Ni nanostructures grown on a ferroelectric PMN-PT substrate using scanning electron microscopy with polarization analysis (SEMPA) and micromagnetic simulations. The magnetization of the Ni nanostructures can be controlled with a combination of sample geometry and applied electric field, which strains the ferroelectric substrate and changes the magnetization via magnetoelastic coupling. We evaluate two types of simulations of ferromagnetic nanostructures on strained ferroelectric substrates: conventional micromagnetic simulations including a simple uniaxial strain, and coupled micromagnetic-elastodynamic simulations. Both simulations qualitatively capture the response of the magnetization changes produced by the applied strain, with the coupled solution providing more accurate representation.
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Affiliation(s)
- Ian Gilbert
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899
| | - Andres C Chavez
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA 90095
| | - Daniel T Pierce
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899
| | - John Unguris
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899
| | - Wei-Yang Sun
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA 90095
| | - Cheng-Yen Liang
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA 90095
| | - Gregory P Carman
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA 90095
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Kim K, Guo J, Liang ZX, Zhu FQ, Fan DL. Man-made rotary nanomotors: a review of recent developments. NANOSCALE 2016; 8:10471-90. [PMID: 27152885 PMCID: PMC4873439 DOI: 10.1039/c5nr08768f] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The development of rotary nanomotors is an essential step towards intelligent nanomachines and nanorobots. In this article, we review the concept, design, working mechanisms, and applications of state-of-the-art rotary nanomotors made from synthetic nanoentities. The rotary nanomotors are categorized according to the energy sources employed to drive the rotary motion, including biochemical, optical, magnetic, and electric fields. The unique advantages and limitations for each type of rotary nanomachines are discussed. The advances of rotary nanomotors is pivotal for realizing dream nanomachines for myriad applications including microfluidics, biodiagnosis, nano-surgery, and biosubstance delivery.
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Affiliation(s)
- Kwanoh Kim
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, USA.
| | - Jianhe Guo
- Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA
| | - Z X Liang
- Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA
| | - F Q Zhu
- NovaMinds, LLC, 9535 Ketona Cv., Austin, TX 78759, USA
| | - D L Fan
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, USA. and Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA
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28
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Hu JM, Yang T, Momeni K, Cheng X, Chen L, Lei S, Zhang S, Trolier-McKinstry S, Gopalan V, Carman GP, Nan CW, Chen LQ. Fast Magnetic Domain-Wall Motion in a Ring-Shaped Nanowire Driven by a Voltage. NANO LETTERS 2016; 16:2341-2348. [PMID: 27002341 DOI: 10.1021/acs.nanolett.5b05046] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.
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Affiliation(s)
- Jia-Mian Hu
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Tiannan Yang
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Kasra Momeni
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Lei Chen
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Shiming Lei
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Shujun Zhang
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Susan Trolier-McKinstry
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Gregory P Carman
- Department of Mechanical and Aerospace Engineering, University of California , Los Angeles, California 90095, United States
| | - Ce-Wen Nan
- School of Materials Science and Engineering, and State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
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Hu JM, Chen LQ, Nan CW. Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:15-39. [PMID: 26551616 DOI: 10.1002/adma.201502824] [Citation(s) in RCA: 90] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2015] [Revised: 08/18/2015] [Indexed: 06/05/2023]
Abstract
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.
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Affiliation(s)
- Jia-Mian Hu
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Long-Qing Chen
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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