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Ramsden H, Sarkar S, Wang Y, Zhu Y, Kerfoot J, Alexeev EM, Taniguchi T, Watanabe K, Tongay S, Ferrari AC, Chhowalla M. Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures. ACS NANO 2023. [PMID: 37319105 DOI: 10.1021/acsnano.3c03261] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a device, adversely affecting macroscale performance. Here, we use conductive mode and cathodoluminescence scanning electron microscopy (CM-SEM and SEM-CL) to investigate these phenomena. As a model system, we use a monolayer WSe2 (1L-WSe2) encapsulated in hexagonal boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons during the SEM measurements. During electron irradiation at 5 keV, up to 70% of beam electrons are deposited into the vdW-HS and can subsequently migrate to the 1L-WSe2. This accumulation of charge leads to dynamic doping of 1L-WSe2, reducing its CL efficiency by up to 30% over 30 s. By providing a path for excess electrons to leave the sample, near full restoration of the initial CL signal can be achieved. These results indicate that the trapping of charges in vdW-HSs during electron irradiation must be considered, in order to obtain and maintain optimal performance of vdW-HS devices during processes such as e-beam lithography or SEM. Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterization of vdW-HS devices can be performed, allowing electrical and optical properties to be correlated.
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Affiliation(s)
- Hugh Ramsden
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Soumya Sarkar
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yan Wang
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yiru Zhu
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - James Kerfoot
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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3
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Wang H, Xu X, Shaymurat T. Effect of Different Solvents on Morphology and Gas-Sensitive Properties of Grinding-Assisted Liquid-Phase-Exfoliated MoS 2 Nanosheets. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4485. [PMID: 36558338 PMCID: PMC9784282 DOI: 10.3390/nano12244485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 12/11/2022] [Accepted: 12/15/2022] [Indexed: 06/17/2023]
Abstract
Grinding-assisted liquid-phase exfoliation is a widely used method for the preparation of two-dimensional nanomaterials. In this study, N-methylpyrrolidone and acetonitrile, two common grinding solvents, were used during the liquid-phase exfoliation for the preparation of MoS2 nanosheets. The morphology and structure of MoS2 nanosheets were analyzed via scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The effects of grinding solvents on the gas-sensing performance of the MoS2 nanosheets were investigated for the first time. The results show that the sensitivities of MoS2 nanosheet exfoliation with N-methylpyrrolidone were 2.4-, 1.4-, 1.9-, and 2.7-fold higher than exfoliation with acetonitrile in the presence of formaldehyde, acetone, and ethanol and 98% relative humidity, respectively. MoS2 nanosheet exfoliation with N-methylpyrrolidone also has fast response and recovery characteristics to 50-1000 ppm of CH2O. Accordingly, although N-methylpyrrolidone cannot be removed completely from the surface of MoS2, it has good gas sensitivity compared with other samples. Therefore, N-methylpyrrolidone is preferred for the preparation of gas-sensitive MoS2 nanosheets in grinding-assisted liquid-phase exfoliation. The results provide an experimental basis for the preparation of two-dimensional materials and their application in gas sensors.
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Affiliation(s)
- Hao Wang
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China
- Xinjiang Condensed Matter Phase Transition and Microstructure Laboratory, College of Physics Science and Technology, Yili Normal University, Yining 835000, China
| | - Xiaojie Xu
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China
- Xinjiang Condensed Matter Phase Transition and Microstructure Laboratory, College of Physics Science and Technology, Yili Normal University, Yining 835000, China
| | - Talgar Shaymurat
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China
- Xinjiang Condensed Matter Phase Transition and Microstructure Laboratory, College of Physics Science and Technology, Yili Normal University, Yining 835000, China
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4
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Kong Y, Obaidulla SM, Habib MR, Wang Z, Wang R, Khan Y, Zhu H, Xu M, Yang D. Interlayer exciton emission in a MoS 2/VOPc inorganic/organic van der Waals heterostructure. MATERIALS HORIZONS 2022; 9:1253-1263. [PMID: 35099485 DOI: 10.1039/d1mh01622a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Heterostructures built from two-dimensional (2D) materials and organic semiconductors offer a unique platform for addressing many fundamental physics and construction of functional devices by taking advantage of both the 2D materials and organic semiconductors. We report interlayer exciton emission in the near infrared range around 1.54 eV (∼805 nm) from the heterostructure of pyramidal VOPc (p-type) and transition metal dichalcogenide monolayer MoS2 (VOPc/MoS2). This contrasts the observation of photoluminescence (PL) from the SnCl2Pc/MoS2 heterostructure despite both being type-II heterostructures. We attribute the exciton emission to the carrier transition from the generated interface mid-gap states of VOPc to the ground states of MoS2 in the heterostructure system as predicted from density functional theory (DFT) calculations. Furthermore, the observed PL signal of the VOPc/MoS2 heterostructure shows blue shift, while the PL peak of the SnCl2Pc/MoS2 heterostructure shows red shift. Our finding opens up a new avenue to tune the optoelectronic properties of the van der Waals heterojunctions consisting of 2D materials and organic semiconductors for optoelectronic applications.
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Affiliation(s)
- Yuhan Kong
- Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Sk Md Obaidulla
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička cesta 46, HR-10000 Zagreb, Croatia
| | - Mohammad Rezwan Habib
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Zukun Wang
- Department of Chemistry, Zhejiang University, Hangzhou 310027, P. R. China
| | - Rong Wang
- ZJU Hangzhou Global Sci & Technol Innovat Ctr, Adv Semicond Res Inst, Hangzhou 311215, P. R. China
| | - Yahya Khan
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Haiming Zhu
- Department of Chemistry, Zhejiang University, Hangzhou 310027, P. R. China
| | - Mingsheng Xu
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
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5
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Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets. NANOMATERIALS 2022; 12:nano12060973. [PMID: 35335786 PMCID: PMC8949030 DOI: 10.3390/nano12060973] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 03/03/2022] [Accepted: 03/09/2022] [Indexed: 02/01/2023]
Abstract
Molybdenum disulfide (MoS2) got tremendous attention due to its atomically thin body, rich physics, and high carrier mobility. The controlled synthesis of large area and high crystalline monolayer MoS2 nanosheets on diverse substrates remains a challenge for potential practical applications. Synthesizing different structured MoS2 nanosheets with horizontal and vertical orientations with respect to the substrate surface would bring a configurational versatility with benefit for numerous applications, including nanoelectronics, optoelectronics, and energy technologies. Among the proposed methods, ambient pressure chemical vapor deposition (AP-CVD) is a promising way for developing large-scale MoS2 nanosheets because of its high flexibility and facile approach. Here, we show an effective way for synthesizing large-scale horizontally and vertically aligned MoS2 on different substrates such as flat SiO2/Si, pre-patterned SiO2 and conductive substrates (TaN) benefit various direct TMDs production. In particular, we show precise control of CVD optimization for yielding high-quality MoS2 layers by changing growth zone configuration and the process steps. We demonstrated that the influence of configuration variability by local changes of the S to MoO3 precursor positions in the growth zones inside the CVD reactor is a key factor that results in differently oriented MoS2 formation. Finally, we show the layer quality and physical properties of as-grown MoS2 by means of different characterizations: Raman spectroscopy, scanning electron microscopy (SEM), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These experimental findings provide a strong pathway for conformally recasting AP-CVD grown MoS2 in many different configurations (i.e., substrate variability) or motifs (i.e., vertical or planar alignment) with potential for flexible electronics, optoelectronics, memories to energy storage devices.
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6
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Negri M, Francaviglia L, Kaplan D, Swaminathan V, Salviati G, Fontcuberta I Morral A, Fabbri F. Excitonic absorption and defect-related emission in three-dimensional MoS 2 pyramids. NANOSCALE 2022; 14:1179-1186. [PMID: 34918727 PMCID: PMC8793919 DOI: 10.1039/d1nr06041d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Accepted: 11/27/2021] [Indexed: 06/14/2023]
Abstract
MoS2 micro-pyramids have demonstrated interesting properties in the fields of photonics and non-linear optics. In this work, we show the excitonic absorption and cathodoluminescence (CL) emission of MoS2 micro-pyramids grown by chemical vapor deposition (CVD) on SiO2 substrates. The excitonic absorption was obtained at room and cryogenic temperatures by taking advantage of the cathodoluminescence emission of the SiO2 substrate. We detected the CL emission related to defect intra-gap states, localized at the pyramid edges and with an enhanced intensity at the pyramid basal vertices. The photoluminescence and absorption analysis provided the Stokes shift of both the A and B excitons in the MoS2 pyramids. This analysis provides new insights into the optical functionality of MoS2 pyramids. This method can be applied to other 3D structures within the 2D materials family.
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Affiliation(s)
- M Negri
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
- Institute for Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy
| | - L Francaviglia
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - D Kaplan
- U.S. Army RDECOM-ARDEC, Fuze Precision Armaments and Technology Directorate, Picatinny Arsenal, NJ 07806, USA
| | - V Swaminathan
- U.S. Army RDECOM-ARDEC, Fuze Precision Armaments and Technology Directorate, Picatinny Arsenal, NJ 07806, USA
- Department of Physics, Penn State University, USA
| | - G Salviati
- Institute for Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy
| | - A Fontcuberta I Morral
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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7
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Xiong G, Zhu H, Wang L, Fan L, Zheng Z, Li B, Zhao F, Han Z. Radiation damage and abnormal photoluminescence enhancement of multilayer MoS 2under neutron irradiation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:055701. [PMID: 34673561 DOI: 10.1088/1361-648x/ac31f8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
In this work, neutron irradiation effects on the optical property of multilayer MoS2have been investigated in depth. Our results display that the intensity of the photoluminescence (PL) spectra of MoS2flakes tends to slightly decrease after exposed to neutron irradiation with low fluence of 4.0 × 108n/cm2. An unexpected improvement of PL intensity, however, is observed when the irradiation fluence accumulates to 3.2 × 109n/cm2. Combined with the experimental results and first-principles calculations, neutron irradiation damage effects of multilayer MoS2are analyzed deeply. Sulfur vacancy (VS) is found to be responsible for the attenuation of the PL intensity as a major defect. In addition, our results reveal that the adsorbed hydroxyl groups (OH) and oxygen atoms (O) on the surface of MoS2flakes not only promote the transition from trion excitons to neutral excitons, but also repair theVSin MoS2, both of which contribute to the enhancement of luminescence properties. The detailed evolution process of irradiation-induced defects is discussed to reveal the microscopic mechanism of the significantly difference in luminescence intensity of MoS2under different irradiation stages. This work has great significance for evaluating the neutron radiation hardness of multilayer MoS2, which is helpful to enrich the fundamental research on neutron irradiation effects.
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Affiliation(s)
- Guodong Xiong
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Huiping Zhu
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Lei Wang
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Linsheng Fan
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252000, People's Republic of China
| | - Zhongshan Zheng
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Bo Li
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Fazhan Zhao
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Zhengsheng Han
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Aryeetey F, Pourianejad S, Ayanbajo O, Nowlin K, Ignatova T, Aravamudhan S. Bandgap recovery of monolayer MoS 2 using defect engineering and chemical doping. RSC Adv 2021; 11:20893-20898. [PMID: 35479368 PMCID: PMC9034023 DOI: 10.1039/d1ra02888j] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 06/02/2021] [Indexed: 01/07/2023] Open
Abstract
Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications. Among these materials, molybdenum disulfide is the most known due to extensive research in understanding its electronic and optical properties. In this paper, we report on the successful growth and modification of monolayer MoS2 (1L MoS2) by controlling carrier concentration and manipulating bandgap in order to improve the efficiency of light emission. Atomic size MoS2 vacancies were created using a Helium Ion Microscope, then the defect sites were doped with 2,3,5,6-tetrafluro7,7,8,8-tetracyanoquinodimethane (F4TCNQ). The carrier concentration in intrinsic (as-grown) and engineered 1L MoS2 was calculated using Mass Action model. The results are in a good agreement with Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy characterizations. Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications.![]()
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Affiliation(s)
- Frederick Aryeetey
- Department of Nanoengineering, North Carolina A&T State University 2907 East Gate City Blvd Greensboro NC 27401 USA +1-336-500-0115 +1-336-285-2810
| | - Sajedeh Pourianejad
- Department of Nanoscience, University of North Carolina at Greensboro 2907 East Gate City Blvd Greensboro North Carolina 27401 USA +1-336-500-0115 +1-336-285-2820
| | - Olubukola Ayanbajo
- Department of Nanoengineering, North Carolina A&T State University 2907 East Gate City Blvd Greensboro NC 27401 USA +1-336-500-0115 +1-336-285-2810
| | - Kyle Nowlin
- Department of Nanoscience, University of North Carolina at Greensboro 2907 East Gate City Blvd Greensboro North Carolina 27401 USA +1-336-500-0115 +1-336-285-2820
| | - Tetyana Ignatova
- Department of Nanoscience, University of North Carolina at Greensboro 2907 East Gate City Blvd Greensboro North Carolina 27401 USA +1-336-500-0115 +1-336-285-2820
| | - Shyam Aravamudhan
- Department of Nanoengineering, North Carolina A&T State University 2907 East Gate City Blvd Greensboro NC 27401 USA +1-336-500-0115 +1-336-285-2810
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Bhatnagar M, Gardella M, Giordano MC, Chowdhury D, Mennucci C, Mazzanti A, Valle GD, Martella C, Tummala P, Lamperti A, Molle A, Buatier de Mongeot F. Broadband and Tunable Light Harvesting in Nanorippled MoS 2 Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:13508-13516. [PMID: 33687194 PMCID: PMC8041252 DOI: 10.1021/acsami.0c20387] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2020] [Accepted: 02/22/2021] [Indexed: 05/19/2023]
Abstract
Nanofabrication of flat optic silica gratings conformally layered with two-dimensional (2D) MoS2 is demonstrated over large area (cm2), achieving a strong amplification of the photon absorption in the active 2D layer. The anisotropic subwavelength silica gratings induce a highly ordered periodic modulation of the MoS2 layer, promoting the excitation of Guided Mode Anomalies (GMA) at the interfaces of the 2D layer. We show the capability to achieve a broadband tuning of these lattice modes from the visible (VIS) to the near-infrared (NIR) by simply tailoring the illumination conditions and/or the period of the lattice. Remarkably, we demonstrate the possibility to strongly confine resonant and nonresonant light into the 2D MoS2 layers via GMA excitation, leading to a strong absorption enhancement as high as 240% relative to a flat continuous MoS2 film. Due to their broadband and tunable photon harvesting capabilities, these large area 2D MoS2 metastructures represent an ideal scalable platform for new generation devices in nanophotonics, photo- detection and -conversion, and quantum technologies.
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Affiliation(s)
- Mukul Bhatnagar
- Dipartimento
di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy
| | - Matteo Gardella
- Dipartimento
di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy
| | | | - Debasree Chowdhury
- Dipartimento
di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy
| | - Carlo Mennucci
- Dipartimento
di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy
| | - Andrea Mazzanti
- Dipartimento
di Fisica and IFN-CNR, Politecnico di Milano, Piazza Leonardo da Vinci, 32-20133 Milano, Italy
| | - Giuseppe Della Valle
- Dipartimento
di Fisica and IFN-CNR, Politecnico di Milano, Piazza Leonardo da Vinci, 32-20133 Milano, Italy
- (G.D.V.)
| | - Christian Martella
- CNR-IMM
Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, I-20864, Italy
| | - Pinakapani Tummala
- CNR-IMM
Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, I-20864, Italy
| | - Alessio Lamperti
- CNR-IMM
Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, I-20864, Italy
| | - Alessandro Molle
- CNR-IMM
Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, I-20864, Italy
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Xu Y, Ma Y, Yu Y, Chen S, Chang Y, Chen X, Xu G. Self-powered, ultra-high detectivity and high-speed near-infrared photodetectors from stacked-layered MoSe 2/Si heterojunction. NANOTECHNOLOGY 2021; 32:075201. [PMID: 33113523 DOI: 10.1088/1361-6528/abc57d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photodetectors based on high-performance, two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are limited by the synthesis of larger-area 2D TMDCs with high quality and optimized device structure. Herein, we report, for the first time, a uniform and stacked-layered MoSe2 film of high quality was deposited onto Si substrate by using the pulsed laser deposition technique, and then in situ constructed layered MoSe2/Si 2D-3D vertical heterojunction. The resultant heterojunction showed a wide near-infrared response up to 1550 nm, with both ultra-high detectivity up to 1.4 × 1014 Jones and a response speed approaching 120 ns at zero bias, which are much better than most previous 2D TMDC-based photodetectors and are comparable to that of commercial Si photodiodes. The high performance of the layered MoSe2/Si heterojunction can be attributed to be the high-quality stacked-layered MoSe2 film, the excellent rectifying behavior of the device and the n-n heterojunction structure. Moreover, the defect-enhanced near-infrared response was determined to be Se vacancies from the density functional theory (DFT) simulations. These results suggest great potential of the layered MoSe2/Si 2D-3D heterojunctions in the field of communication light detection. More importantly, the in situ grown heterojunctions are expected to boost the development of other 2D TMDCs heterojunction-based optoelectronic devices.
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Affiliation(s)
- Yan Xu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
- Intelligent Interconnected Systems Laboratory of Anhui Province (Hefei University of Technology), Anhui, 230009, People's Republic of China
| | - Yuanming Ma
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Yongqiang Yu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
- Intelligent Interconnected Systems Laboratory of Anhui Province (Hefei University of Technology), Anhui, 230009, People's Republic of China
| | - Shirong Chen
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Yajing Chang
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, Anhui, 230037, People's Republic of China
| | - Xing Chen
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Gaobin Xu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
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11
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Molaei MJ. Two-dimensional (2D) materials beyond graphene in cancer drug delivery, photothermal and photodynamic therapy, recent advances and challenges ahead: A review. J Drug Deliv Sci Technol 2021. [DOI: 10.1016/j.jddst.2020.101830] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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12
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Jiang F, Zhang L, Yue T, Tang H, Wang L, Sun W, Zhang C, Chen J. Defect-boosted molybdenite-based co-catalytic Fenton reaction. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00344e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
High-defect molybdenite acts an efficient co-catalyst to substantially enhance the Fenton reaction.
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Affiliation(s)
- Feng Jiang
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Limin Zhang
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Tong Yue
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Honghu Tang
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Li Wang
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Wei Sun
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Chenyang Zhang
- School of Minerals Processing and Bioengineering
- Central South University
- Changsha 410083
- China
| | - Jinxing Chen
- Institute of Functional Nano & Soft Materials (FUNSOM)
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices
- Soochow University
- Suzhou
- PR China
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13
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Yang Y, Shang J, Gao H, Sun Q, Kou L, Chen ZG, Zou J. Intercalation-Induced Disintegrated Layer-By-Layer Growth of Ultrathin Ternary Mo(Te 1-xS x) 2 Plates. ACS APPLIED MATERIALS & INTERFACES 2020; 12:30980-30989. [PMID: 32515585 DOI: 10.1021/acsami.0c07342] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Nanometer-thick transition-metal dichalcogenides (TMDs) have attracted increasing research interest because of their exotic physical properties, but their high-yield and large-scale synthesis remains a challenge for their practical device applications. In this study, we realize the high-yield synthesis of nanometer-thick single-crystalline Mo(Te1-xSx)2 plates by a facile chemical vapor deposition method. Adding S powders in the precursors can result in the products varying from well-faceted MoTe2 hexagonal plates to irregular Mo(Te1-xSx)2 plates with randomly stacked nanometer-thick layer steps. Moreover, their lateral dimension increases from several μm for binary MoTe2 to several tens of μm for ternary Mo(Te1-xSx)2. More interestingly, such irregular Mo(Te1-xSx)2 plates can form few layers by ultrasonic exfoliation. Our detailed electron microscopy analyses show that three kinds of S forms influence the ternary growth. In particular, elemental S8 intercalations play an important role in the growth and exfoliation of ultrathin Mo(Te1-xSx)2 plates. This study enriches the fundamental understanding of zero-valent intercalation in TMDs and provides a new insight into secure high-yield nanometer-thick TMDs, which is critical for practical applications.
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Affiliation(s)
- Yuzhe Yang
- School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia
| | - Jing Shang
- School of Chemistry, Physics and Mechanical Engineering Faculty, Queensland University of Technology, Gardens Point Campus, Brisbane, Queensland 4001, Australia
| | - Han Gao
- School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia
| | - Qiang Sun
- School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia
| | - Liangzhi Kou
- School of Chemistry, Physics and Mechanical Engineering Faculty, Queensland University of Technology, Gardens Point Campus, Brisbane, Queensland 4001, Australia
| | - Zhi-Gang Chen
- School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland 4300, Australia
| | - Jin Zou
- School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072, Australia
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14
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He Q, Chen J, Yan J, Cai S, Xiong H, Liu Y, Peng D, Mo M, Liu Z. Tumor microenvironment responsive drug delivery systems. Asian J Pharm Sci 2020; 15:416-448. [PMID: 32952667 PMCID: PMC7486519 DOI: 10.1016/j.ajps.2019.08.003] [Citation(s) in RCA: 78] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2019] [Revised: 07/30/2019] [Accepted: 08/21/2019] [Indexed: 12/12/2022] Open
Abstract
Conventional tumor-targeted drug delivery systems (DDSs) face challenges, such as unsatisfied systemic circulation, low targeting efficiency, poor tumoral penetration, and uncontrolled drug release. Recently, tumor cellular molecules-triggered DDSs have aroused great interests in addressing such dilemmas. With the introduction of several additional functionalities, the properties of these smart DDSs including size, surface charge and ligand exposure can response to different tumor microenvironments for a more efficient tumor targeting, and eventually achieve desired drug release for an optimized therapeutic efficiency. This review highlights the recent research progresses on smart tumor environment responsive drug delivery systems for targeted drug delivery. Dynamic targeting strategies and functional moieties sensitive to a variety of tumor cellular stimuli, including pH, glutathione, adenosine-triphosphate, reactive oxygen species, enzyme and inflammatory factors are summarized. Special emphasis of this review is placed on their responsive mechanisms, drug loading models, drawbacks and merits. Several typical multi-stimuli responsive DDSs are listed. And the main challenges and potential future development are discussed.
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Affiliation(s)
- Qunye He
- Xiangya School of Pharmaceutical Sciences, Central South University, Changsha 410013, China
| | - Jun Chen
- Xiangya School of Pharmaceutical Sciences, Central South University, Changsha 410013, China
| | - Jianhua Yan
- Xiangya School of Pharmaceutical Sciences, Central South University, Changsha 410013, China
| | - Shundong Cai
- Xiangya School of Pharmaceutical Sciences, Central South University, Changsha 410013, China
| | - Hongjie Xiong
- Xiangya School of Pharmaceutical Sciences, Central South University, Changsha 410013, China
| | - Yanfei Liu
- School of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China
| | - Dongming Peng
- School of Pharmacy, Hunan University of Chinese Medicine, Changsha 410208, China
| | - Miao Mo
- Department of Urology, Xiangya Hospital, Central South University, Changsha 410008, China
| | - Zhenbao Liu
- Xiangya School of Pharmaceutical Sciences, Central South University, Changsha 410013, China
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15
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Rotunno E, Bosi M, Seravalli L, Salviati G, Fabbri F. Influence of organic promoter gradient on the MoS 2 growth dynamics. NANOSCALE ADVANCES 2020; 2:2352-2362. [PMID: 36133371 PMCID: PMC9418129 DOI: 10.1039/d0na00147c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2020] [Accepted: 04/11/2020] [Indexed: 06/10/2023]
Abstract
Chemical vapor deposition has been demonstrated to be the most efficient, versatile and reliable technique for the synthesis of monolayers of transition metal dichalcogenides. The use of organic promoters during the growth process was a turning point in order to increase the monolayer lateral size or to obtain complete coverage of the growth substrate. In this work we clarify the influence of the promoter gradient on the growth dynamics of MoS2. In particular, we place a sacrificial substrate covered with a promoter (a low sublimation-temperature perylene-based compound) downstream with respect to the growth substrate in order to maximize its gradient on the growth substrate through upstream diffusion. We demonstrate that the morphology and the number of layers of MoS2 are drastically affected by the distance of the growth substrate from the promoter sacrificial substrate. The farthermost area from the promoter substrate presents micrometric MoS2 triangular monolayers and large low hierarchy dendritic multi-layer structures. On the contrary the closest area reveals an almost continuous polycrystalline MoS2 monolayer, with bilayer terraces, with a lateral dimension up to hundreds of micrometers.
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Affiliation(s)
- E Rotunno
- Istituto Nanoscienze-CNR via G Campi 213/a 41125 Modena Italy
| | - M Bosi
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - L Seravalli
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - G Salviati
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
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16
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Li Y, Liu W, Ren H, Feng Q, Yan J, Zhong W, Xin X, Xu H, Liu Y. Enhanced Carrier-Exciton Interactions in Monolayer MoS 2 under Applied Voltages. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18870-18876. [PMID: 32174108 DOI: 10.1021/acsami.0c02187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Carrier-exciton interactions in two-dimensional transition metal dichalcogenides (TMDs) is one of the crucial elements for limiting the performance of their optoelectronic devices. Here, we have experimentally studied the carrier-exciton interactions in a monolayer MoS2-based two-terminal device. Such two-terminal device without a gate electrode is generally considered as invalid to modulate the carrier concentration in active materials, while the photoluminescence peak exhibits a red shift and decay with increasing applied voltages. Time-resolved photoluminescence spectroscopy and photoluminescence multipeak fittings verify that such changes of photoluminescence peaks result from enhanced carrier-exciton interactions with increasing electron concentration induce the charged exciton increasing. To characterize the level of the carrier-exciton interactions, a quantitative relationship between the Raman shift of out-of-plane mode and changes in electron concentration has been established using the mass action model. This work provides an appropriate supplement for understanding the carrier-exciton interactions in TMD-based two-terminal optoelectronic devices.
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Affiliation(s)
- Yuanzheng Li
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Weizhen Liu
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Hang Ren
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Qiushi Feng
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Jiaxu Yan
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Weiheng Zhong
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Xing Xin
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Haiyang Xu
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
| | - Yichun Liu
- Ministry of Education, Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
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17
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Canton-Vitoria R, Sayed-Ahmad-Baraza Y, Humbert B, Arenal R, Ewels CP, Tagmatarchis N. Pyrene Coating Transition Metal Disulfides as Protection from Photooxidation and Environmental Aging. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E363. [PMID: 32093023 PMCID: PMC7075307 DOI: 10.3390/nano10020363] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2020] [Revised: 02/13/2020] [Accepted: 02/14/2020] [Indexed: 01/06/2023]
Abstract
Environmental degradation of transition metal disulfides (TMDs) is a key stumbling block in a range of applications. We show that a simple one-pot non-covalent pyrene coating process protects TMDs from both photoinduced oxidation and environmental aging. Pyrene is immobilized non-covalently on the basal plane of exfoliated MoS2 and WS2. The optical properties of TMD/pyrene are assessed via electronic absorption and fluorescence emission spectroscopy. High-resolution scanning transmission electron microscopy coupled with electron energy loss spectroscopy confirms extensive pyrene surface coverage, with density functional theory calculations suggesting a strongly bound stable parallel-stacked pyrene coverage of ~2-3 layers on the TMD surfaces. Raman spectroscopy of exfoliated TMDs while irradiating at 0.9 mW/4 μm2 under ambient conditions shows new and strong Raman bands due to oxidized states of Mo and W. Yet remarkably, under the same exposure conditions TMD/pyrene remain unperturbed. The current findings demonstrate that pyrene physisorbed on MoS2 and WS2 acts as an environmental barrier, preventing oxidative surface reactions in the TMDs catalyzed by moisture, air, and assisted by laser irradiation. Raman spectroscopy confirms that the hybrid materials stored under ambient conditions for two years remained structurally unaltered, corroborating the beneficial role of pyrene for not only hindering oxidation but also inhibiting aging.
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Affiliation(s)
- Ruben Canton-Vitoria
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece;
| | - Yuman Sayed-Ahmad-Baraza
- Institut des Materiaux Jean Rouxel (IMN), UMR6502 CNRS, Universite de Nantes, 2 Rue de la Houssiniere, BP32229, 44322 Nantes, France; (Y.S.-A.-B.); (B.H.)
| | - Bernard Humbert
- Institut des Materiaux Jean Rouxel (IMN), UMR6502 CNRS, Universite de Nantes, 2 Rue de la Houssiniere, BP32229, 44322 Nantes, France; (Y.S.-A.-B.); (B.H.)
| | - Raul Arenal
- Laboratorio de Microscopias Avanzadas, Instituto de Nanociencia de Aragon, Universidad de Zaragoza, 50018 Zaragoza, Spain
- ARAID Foundation, 50018 Zaragoza, Spain
- Instituto de Ciencias de Materiales de Aragon, CSIC-U. Zaragoza, 50009 Zaragoza, Spain
| | - Christopher P. Ewels
- Institut des Materiaux Jean Rouxel (IMN), UMR6502 CNRS, Universite de Nantes, 2 Rue de la Houssiniere, BP32229, 44322 Nantes, France; (Y.S.-A.-B.); (B.H.)
| | - Nikos Tagmatarchis
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece;
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18
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Negri M, Francaviglia L, Dumcenco D, Bosi M, Kaplan D, Swaminathan V, Salviati G, Kis A, Fabbri F, Fontcuberta I Morral A. Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials. NANO LETTERS 2020; 20:567-576. [PMID: 31874041 DOI: 10.1021/acs.nanolett.9b04304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional semiconductors, in particular transition metal dichalcogenides and related heterostructures, have gained increasing interest as they constitute potential new building blocks for the next generation of electronic and optoelectronic applications. In this work, we develop a novel nondestructive and noncontact technique for mapping the absorption properties of 2D materials, by taking advantage of the underlying substrate cathodoluminescence emission. We map the quantitative absorption of MoS2 and MoSe2 monolayers, obtained on sapphire and oxidized silicon, with nanoscale resolution. We extend our technique to the characterization of the absorption properties of MoS2/MoSe2 van der Waals heterostructures. We demonstrate that interlayer excitonic phenomena enhance the absorption in the UV range. Our technique also highlights the presence of defects such as grain boundaries and ad-layers. We provide measurements on the absorption of grain boundaries in monolayer MoS2 at different merging angles. We observe a higher absorption yield of randomly oriented monolayers with respect to 60° rotated monolayers. This work opens up a new possibility for characterizing the functional properties two-dimensional semiconductors at the nanoscale.
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Affiliation(s)
- Marco Negri
- Institute of Materials, Faculty of Engineering , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Luca Francaviglia
- Institute of Materials, Faculty of Engineering , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Dumitru Dumcenco
- Institute of Materials, Faculty of Engineering , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
- Electrical Engineering Institute , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland
| | - Matteo Bosi
- Institute for Materials for Electronics and Magnetism (IMEM-CNR) , Parco Area delle Scienze 37/A , 43124 Parma , Italy
| | - Daniel Kaplan
- Fuze Precision Armaments and Technology Directorate , U.S. Army RDECOM-ARDEC , Picatinny Arsenal , New Jersey 07806 , United States
| | - Venkataraman Swaminathan
- Fuze Precision Armaments and Technology Directorate , U.S. Army RDECOM-ARDEC , Picatinny Arsenal , New Jersey 07806 , United States
| | - Giancarlo Salviati
- Institute for Materials for Electronics and Magnetism (IMEM-CNR) , Parco Area delle Scienze 37/A , 43124 Parma , Italy
| | - Andras Kis
- Electrical Engineering Institute , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland
| | - Filippo Fabbri
- NEST , Istituto Nanoscienze-CNR, Scuola Normale Superiore , Piazza San Silvestro 12 , 56127 Pisa , Italy
| | - Anna Fontcuberta I Morral
- Institute of Materials, Faculty of Engineering , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
- Institute of Physics, Faculty of Basic Sciences , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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19
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Polman A, Kociak M, García de Abajo FJ. Electron-beam spectroscopy for nanophotonics. NATURE MATERIALS 2019; 18:1158-1171. [PMID: 31308514 DOI: 10.1038/s41563-019-0409-1] [Citation(s) in RCA: 90] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2018] [Revised: 05/04/2019] [Accepted: 05/14/2019] [Indexed: 05/22/2023]
Abstract
Progress in electron-beam spectroscopies has recently enabled the study of optical excitations with combined space, energy and time resolution in the nanometre, millielectronvolt and femtosecond domain, thus providing unique access into nanophotonic structures and their detailed optical responses. These techniques rely on ~1-300 keV electron beams focused at the sample down to sub-nanometre spots, temporally compressed in wavepackets a few femtoseconds long, and in some cases controlled by ultrafast light pulses. The electrons undergo energy losses and gains (also giving rise to cathodoluminescence light emission), which are recorded to reveal the optical landscape along the beam path. This Review portraits these advances, with a focus on coherent excitations, emphasizing the increasing level of control over the electron wavefunctions and ensuing applications in the study and technological use of optically resonant modes and polaritons in nanoparticles, 2D materials and engineered nanostructures.
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Affiliation(s)
- Albert Polman
- Center for Nanophotonics, AMOLF, Amsterdam, the Netherlands.
| | - Mathieu Kociak
- Laboratoire de Physique des Solides, Université de Paris-Sud, Orsay, France
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), Spain
- ICREA-Institució Catalana de Reserca I Estudis Avançats, Barcelona, Spain
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20
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Gu Z, Song W, Chen SH, Li B, Li W, Zhou R. Defect-assisted protein HP35 denaturation on graphene. NANOSCALE 2019; 11:19362-19369. [PMID: 31099814 DOI: 10.1039/c9nr01143a] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Structural defects in nanomaterials can alter their physical and chemical properties including magnetization, electronic and thermal conductivities, light absorption, and emission capabilities. Here, we investigated the potential impact of these defects on their biological effects through molecular dynamics simulations. By modeling the interaction between a graphene nanosheet and a widely used model protein, the chicken villin headpiece subdomain (HP35), we observed severe protein denaturation upon contact with defective graphene, while the protein remained intact on ideal graphene. The enhanced toxicity of defective graphene was due to the stronger attraction of the surface residues of HP35 from the defect edges (represented by carboxyl groups in our simulations) than from the ideal graphene. Upon binding to defective graphene, the contacting residues were restrained near the defective sites, which acted as "anchors" for the adsorbed protein. The "anchors" subsequently caused the protein to expose its aromatic and hydrophobic core residues to the graphene surface, via strong π-π stacking and hydrophobic interactions, thus leading to the unfolding of the protein. These findings not only highlight the importance of defects in nanomaterials' impact on biological systems, but also provide insights into fine-tuning the potential biological properties of nanomaterials through defect engineering.
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Affiliation(s)
- Zonglin Gu
- State Key Laboratory of Radiation Medicine and Protection, School for Radiological and Interdisciplinary Sciences (RAD-X), and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou 215123, China.
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21
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Aslin J, Mariani E, Dawson K, Barsoum MW. Ripplocations provide a new mechanism for the deformation of phyllosilicates in the lithosphere. Nat Commun 2019; 10:686. [PMID: 30770801 PMCID: PMC6377708 DOI: 10.1038/s41467-019-08587-2] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2018] [Accepted: 01/15/2019] [Indexed: 11/09/2022] Open
Abstract
Deformation in Earth's lithosphere is localised in narrow, high-strain zones. Phyllosilicates, strongly anisotropic layered minerals, are abundant in these rocks, where they accommodate much of the strain and play a significant role in inhibiting or triggering earthquakes. Until now it was understood that phyllosilicates could deform only by dislocation glide along layers and could not accommodate large strains without cracking and dilation. Here we show that a new class of atomic-scale defects, known as ripplocations, explain the development of layer-normal strain without brittle damage. We use high-resolution transmission electron microscopy (TEM) to resolve nano-scale bending characteristic of ripplocations in the phyllosilicate mineral biotite. We demonstrate that conjugate delamination arrays are the result of elastic strain energy release due to the accumulation of layer-normal strain in ripplocations. This work provides the missing mechanism necessary to understand phyllosilicate deformation, with important rheological implications for phyllosilicate bearing seismogenic faults and subduction zones.
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Affiliation(s)
- Joe Aslin
- University of Liverpool, Liverpool, L69 3BX, UK.
| | | | - Karl Dawson
- University of Liverpool, Liverpool, L69 3BX, UK
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22
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Gupta S, Yang JH, Yakobson BI. Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission. NANO LETTERS 2019; 19:408-414. [PMID: 30532982 DOI: 10.1021/acs.nanolett.8b04159] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single photon emission (SPE) by a solid-state source requires presence of a distinct two-level quantum system, usually provided by point defects. Here we note that a number of qualities offered by novel, two-dimensional materials, their all-surface openness and optical transparence, tighter quantum confinement, and reduced charge screening-are advantageous for achieving an ideal SPE. On the basis of first-principles calculations and point-group symmetry analysis, a strategy is proposed to design paramagnetic defect complex with reduced symmetry, meeting all the requirements for SPE: its electronic states are well isolated from the host material bands, belong to a majority spin eigenstate, and can be controllably excited by polarized light. The defect complex is thermodynamically stable and appears feasible for experimental realization to serve as an SPE-source, essential for quantum computing, with ReMoVS in MoS2 as one of the most practical candidates.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Ji-Hui Yang
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
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23
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Yang Y, Liu Y, Man B, Zhao M, Li W. Tuning the electronic and magnetic properties of MoS2 nanotubes with vacancy defects. RSC Adv 2019; 9:17203-17210. [PMID: 35519879 PMCID: PMC9064463 DOI: 10.1039/c8ra08981g] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2018] [Accepted: 04/05/2019] [Indexed: 11/21/2022] Open
Abstract
The effects of vacancy defects on the electronic and magnetic properties of MoS2 nanotubes were studied by DFT calculations. The rich semiconducting, metallic, and half-metallic properties make them suitable for electronic and spintronic devices.
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Affiliation(s)
- Yanmei Yang
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong
- Key Laboratory of Molecular and Nano Probes
- Ministry of Education
| | - Yang Liu
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Baoyuan Man
- College of Physics and Electronics
- Shandong Normal University
- Jinan 250014
- China
| | - Mingwen Zhao
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Weifeng Li
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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24
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Alexaki K, Kostopoulou A, Sygletou M, Kenanakis G, Stratakis E. Unveiling the Structure of MoS x Nanocrystals Produced upon Laser Fragmentation of MoS 2 Platelets. ACS OMEGA 2018; 3:16728-16734. [PMID: 31458302 PMCID: PMC6643385 DOI: 10.1021/acsomega.8b01390] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2018] [Accepted: 09/13/2018] [Indexed: 06/10/2023]
Abstract
Transition-metal dichalcogenide MoS2 nanostructures have attracted tremendous attention due to their unique properties, which render them efficient nanoscale functional components for multiple applications ranging from sensors and biomedical probes to energy conversion and storage devices. However, despite the wide application range, the possibility to tune their size, shape, and composition is still a challenge. At the same time, the correlation of the structure with the optoelectronic properties is still unresolved. Here, we propose a new method to synthesize various morphologies of molybdenum sulfide nanocrystals, on the basis of ultrashort-pulsed laser fragmentation of MoS2 platelets. Depending on the irradiation conditions, multiple MoS x morphologies in the form of nanoribbons, nanospheres, and photoluminescent quantum dots are obtained. Besides the detailed structural analysis of the various crystals formed, the structure-property relation is investigated and discussed.
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25
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Pareek D, Gonzalez MA, Zohrabian J, Sayed MH, Steenhoff V, Lattyak C, Vehse M, Agert C, Parisi J, Schäfer S, Gütay L. A vapor-phase-assisted growth route for large-scale uniform deposition of MoS 2 monolayer films. RSC Adv 2018; 9:107-113. [PMID: 35521563 PMCID: PMC9059526 DOI: 10.1039/c8ra08626e] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2018] [Accepted: 12/11/2018] [Indexed: 11/21/2022] Open
Abstract
In this work a vapor-phase-assisted approach for the synthesis of monolayer MoS2 is demonstrated, based on the sulfurization of thin MoO3-x precursor films in an H2S atmosphere. We discuss the co-existence of various possible growth mechanisms, involving solid-gas and vapor-gas reactions. Different sequences were applied in order to control the growth mechanism and to obtain monolayer films. These variations include the sample temperature and a time delay for the injection of H2S into the reaction chamber. The optimized combination allows for tuning the process route towards the potentially more favorable vapor-gas reactions, leading to an improved material distribution on the substrate surface. Raman and photoluminescence (PL) spectroscopy confirm the formation of ultrathin MoS2 films on SiO2/Si substrates with a narrow thickness distribution in the monolayer range on length scales of a few millimeters. Best results are achieved in a temperature range of 950-1000 °C showing improved uniformity in terms of Raman and PL line shapes. The obtained films exhibit a PL yield similar to mechanically exfoliated monolayer flakes, demonstrating the high optical quality of the prepared layers.
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Affiliation(s)
- Devendra Pareek
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
| | - Marco A Gonzalez
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
| | - Jannik Zohrabian
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
| | - Mohamed H Sayed
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
| | | | | | - Martin Vehse
- DLR Institute of Networked Energy Systems Oldenburg Germany
| | - Carsten Agert
- DLR Institute of Networked Energy Systems Oldenburg Germany
| | - Jürgen Parisi
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
| | - Sascha Schäfer
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
| | - Levent Gütay
- Institute of Physics, Carl von Ossietzky University of Oldenburg Oldenburg Germany
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26
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Portone A, Romano L, Fasano V, Di Corato R, Camposeo A, Fabbri F, Cardarelli F, Pisignano D, Persano L. Low-defectiveness exfoliation of MoS 2 nanoparticles and their embedment in hybrid light-emitting polymer nanofibers. NANOSCALE 2018; 10:21748-21754. [PMID: 30431042 PMCID: PMC6289106 DOI: 10.1039/c8nr06294c] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2018] [Accepted: 10/12/2018] [Indexed: 05/30/2023]
Abstract
Molybdenum disulfide (MoS2) has been attracting extraordinary attention for its intriguing optical, electronic and mechanical properties. Here, we demonstrate hybrid, organic-inorganic light-emitting nanofibers based on MoS2 nanoparticle dopants obtained through a simple and inexpensive sonication process in N-methyl-2-pyrrolidone and successfully encapsulate the nanofibers in polymer filaments. The gentle exfoliation method used to produce the MoS2 nanoparticles results in low defectiveness and preserves the stoichiometry. The fabricated hybrid fibers are smooth, uniform and flawless and exhibit bright and continuous light emission. Moreover, the fibers show significant capability for waveguiding self-emitted light along their longitudinal axes. These findings suggest that emissive MoS2 fibers formed by gentle exfoliation are novel and highly promising optical materials for sensing surfaces and photonic circuits.
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Affiliation(s)
- Alberto Portone
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi’
, Università del Salento
,
via Arnesano
, I-73100 Lecce
, Italy
- NEST
, Istituto Nanoscienze-CNR
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
.
| | - Luigi Romano
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi’
, Università del Salento
,
via Arnesano
, I-73100 Lecce
, Italy
- NEST
, Istituto Nanoscienze-CNR
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
.
| | - Vito Fasano
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi’
, Università del Salento
,
via Arnesano
, I-73100 Lecce
, Italy
| | - Riccardo Di Corato
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi’
, Università del Salento
,
via Arnesano
, I-73100 Lecce
, Italy
- Center for Biomolecular Nanotechnologies (CBN)
, Istituto Italiano di Tecnologia
,
Via Barsanti
, I-73010 Arnesano (LE)
, Italy
| | - Andrea Camposeo
- NEST
, Istituto Nanoscienze-CNR
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
.
| | - Filippo Fabbri
- Center for Nanotechnology Innovation @NEST
, Istituto Italiano di Tecnologia
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
| | - Francesco Cardarelli
- NEST
, Scuola Normale Superiore
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
| | - Dario Pisignano
- NEST
, Istituto Nanoscienze-CNR
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
.
- Dipartimento di Fisica
, Università di Pisa
,
Largo B. Pontecorvo 3
, I-56127 Pisa
, Italy
.
| | - Luana Persano
- NEST
, Istituto Nanoscienze-CNR
,
Piazza San Silvestro 12
, I-56127 Pisa
, Italy
.
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27
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Najafi L, Taheri B, Martín-García B, Bellani S, Di Girolamo D, Agresti A, Oropesa-Nuñez R, Pescetelli S, Vesce L, Calabrò E, Prato M, Del Rio Castillo AE, Di Carlo A, Bonaccorso F. MoS 2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of a CH 3NH 3PbI 3 Perovskite Solar Cell with an Efficiency of over 20. ACS NANO 2018; 12:10736-10754. [PMID: 30240189 DOI: 10.1021/acsnano.8b05514] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Interface engineering of organic-inorganic halide perovskite solar cells (PSCs) plays a pivotal role in achieving high power conversion efficiency (PCE). In fact, the perovskite photoactive layer needs to work synergistically with the other functional components of the cell, such as charge transporting/active buffer layers and electrodes. In this context, graphene and related two-dimensional materials (GRMs) are promising candidates to tune "on demand" the interface properties of PSCs. In this work, we fully exploit the potential of GRMs by controlling the optoelectronic properties of molybdenum disulfide (MoS2) and reduced graphene oxide (RGO) hybrids both as hole transport layer (HTL) and active buffer layer (ABL) in mesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (MAPbI3)-based PSCs. We show that zero-dimensional MoS2 quantum dots (MoS2 QDs), derived by liquid phase exfoliated MoS2 flakes, provide both hole-extraction and electron-blocking properties. In fact, on one hand, intrinsic n-type doping-induced intraband gap states effectively extract the holes through an electron injection mechanism. On the other hand, quantum confinement effects increase the optical band gap of MoS2 (from 1.4 eV for the flakes to >3.2 eV for QDs), raising the minimum energy of its conduction band (from -4.3 eV for the flakes to -2.2 eV for QDs) above the one of the conduction band of MAPbI3 (between -3.7 and -4 eV) and hindering electron collection. The van der Waals hybridization of MoS2 QDs with functionalized reduced graphene oxide (f-RGO), obtained by chemical silanization-induced linkage between RGO and (3-mercaptopropyl)trimethoxysilane, is effective to homogenize the deposition of HTLs or ABLs onto the perovskite film, since the two-dimensional nature of RGO effectively plugs the pinholes of the MoS2 QD films. Our "graphene interface engineering" (GIE) strategy based on van der Waals MoS2 QD/graphene hybrids enables MAPbI3-based PSCs to achieve a PCE up to 20.12% (average PCE of 18.8%). The possibility to combine quantum and chemical effects into GIE, coupled with the recent success of graphene and GRMs as interfacial layer, represents a promising approach for the development of next-generation PSCs.
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Affiliation(s)
- Leyla Najafi
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | - Babak Taheri
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Beatriz Martín-García
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | - Sebastiano Bellani
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | - Diego Di Girolamo
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Antonio Agresti
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Reinier Oropesa-Nuñez
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
- BeDimensional Srl. , Via Albisola 121 , 16163 Genova , Italy
| | - Sara Pescetelli
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Luigi Vesce
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Emanuele Calabrò
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Mirko Prato
- Materials Characterization Facility , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | | | - Aldo Di Carlo
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
- L.A.S.E.-Laboratory for Advanced Solar Energy , National University of Science and Technology "MISiS" , Leninskiy Prosect 6 , 119049 Moscow , Russia
| | - Francesco Bonaccorso
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
- BeDimensional Srl. , Via Albisola 121 , 16163 Genova , Italy
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28
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Okuno Y, Lancry O, Tempez A, Cairone C, Bosi M, Fabbri F, Chaigneau M. Probing the nanoscale light emission properties of a CVD-grown MoS 2 monolayer by tip-enhanced photoluminescence. NANOSCALE 2018; 10:14055-14059. [PMID: 29999092 DOI: 10.1039/c8nr02421a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides are gaining increasing interest due to their promising optical properties. In particular, molybdenum disulfide (MoS2) which displays a band-gap change from indirect at 1.29 eV for bulk materials to direct at 1.8 eV for the material monolayer. This particular effect can lead to a strong light interaction which can pave the way for a new approach to the next generation of visible light emitting devices. In this work we show the nanoscale variation of light emission properties by tip-enhanced photoluminescence microscopy and spectroscopy in the MoS2 monolayer, grown by chemical vapour deposition. The variations of the light emission properties are due to different effects depending on the shape of the MoS2 single layer, for instance, a different concentration of point defect in an irregularly shaped flake and the presence of a nanoscale terrace in a triangular monolayer. Simultaneously, atomic force microscopy reveals indeed the presence of a nanometric terrace, composed of an additional layer of MoS2, and tip-enhanced PL intensity imaging shows a localized intensity decrease.
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Affiliation(s)
- Yoshito Okuno
- Scientific & Semiconducting Instruments R&D Department, HORIBA Ltd, 2 Kisshouin Miyanohigashi-machi, Kyoto 601-8510, Japan.
| | - Ophélie Lancry
- HORIBA Scientific, Avenue de la Vauve - Passage Jobin Yvon- CS, Palaiseau 45002, France
| | - Agnès Tempez
- HORIBA Scientific, Avenue de la Vauve - Passage Jobin Yvon- CS, Palaiseau 45002, France
| | - Cristina Cairone
- Department of Chemical Sciences and Technologies, University of Rome "Tor Vergata" via della Ricerca Scientifica 1, Rome 00133, Italy
| | - Matteo Bosi
- IMEM-CNR Institute, Parco Area delle Scienze 37/A, Parma 43124, Italy
| | - Filippo Fabbri
- Center for Nanotechnology Innovation @NEST, Piazza San Silvestro 12, Pisa 56127, Italy
| | - Marc Chaigneau
- HORIBA Scientific, Avenue de la Vauve - Passage Jobin Yvon- CS, Palaiseau 45002, France
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29
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Gupta S, Shirodkar SN, Kaplan D, Swaminathan V, Yakobson BI. Franck Condon shift assessment in 2D MoS 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:095501. [PMID: 29431152 DOI: 10.1088/1361-648x/aaa93e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Optical spectroscopy (OS) techniques are often coupled with first-principles density functional theoretical (DFT) calculations for determining the precise influence of defects on the electronic and structural properties of two-dimensional (2D) transition metal dichalcogenides. Such calculations are carried out presuming there is little or no effect of vibrational transitions on the observed electronic spectrum. However, if the effect of change in vibrational energy (Franck Condon (FC) shift) associated with such a transition is large, it could possibly lead to a different origin for the observed peak. One such instance is the attribution of the 0.75 eV cathodoluminescence peak by Fabbri et al (2016 Nat. Commun. 7 13044) to an optical transition from an S vacancy level in the band gap, under the assumption that the FC shift is negligible. Here, by first principles constrained DFT calculations using hybrid HSE06 functional we show that this combined prediction of OS and DFT calculations is valid for 2D MoS2 since the FC shift associated with electronic transitions from a sulfur vacancy is indeed small ~28 meV. Based on our calculations we conclude that it is reasonable to make a direct connection between DFT calculations and optical spectroscopy techniques in this material, hence, establishing a one to one relation between defect related emission bands and electronic transitions from the defect levels.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX 77005, United States of America
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30
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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31
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Barzegar M, Berahman M, Iraji zad A. Sensing behavior of flower-shaped MoS 2 nanoflakes: case study with methanol and xylene. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2018; 9:608-615. [PMID: 29527436 PMCID: PMC5827788 DOI: 10.3762/bjnano.9.57] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2017] [Accepted: 01/26/2018] [Indexed: 06/04/2023]
Abstract
Recent research interest in two-dimensional (2D) materials has led to an emerging new group of materials known as transition metal dichalcogenides (TMDs), which have significant electrical, optical, and transport properties. MoS2 is one of the well-known 2D materials in this group, which is a semiconductor with controllable band gap based on its structure. The hydrothermal process is known as one of the scalable methods to synthesize MoS2 nanostructures. In this study, the gas sensing properties of flower-shaped MoS2 nanoflakes, which were prepared from molybdenum trioxide (MoO3) by a facile hydrothermal method, have been studied. Material characterization was performed using X-ray diffraction, Brunauer-Emmett-Teller surface area measurements, elemental analysis using energy dispersive X-ray spectroscopy, and field-emission scanning electron microscopy. The gas sensing characteristics were evaluated under exposure to various concentrations of xylene and methanol vapors. The results reveal higher sensitivity and shorter response times for methanol at temperatures below 200 °C toward 200 to 400 ppm gas concentrations. The sensing mechanisms for both gases are discussed based on simulation results using density functional theory and charge transfer.
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Affiliation(s)
- Maryam Barzegar
- Nanotechnology Research Institute, Sharif University of Technology, Tehran, Iran
| | - Masoud Berahman
- Physics Department, Sharif University of Technology, Tehran, Iran
| | - Azam Iraji zad
- Nanotechnology Research Institute, Sharif University of Technology, Tehran, Iran
- Physics Department, Sharif University of Technology, Tehran, Iran
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32
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Li BL, Setyawati MI, Chen L, Xie J, Ariga K, Lim CT, Garaj S, Leong DT. Directing Assembly and Disassembly of 2D MoS 2 Nanosheets with DNA for Drug Delivery. ACS APPLIED MATERIALS & INTERFACES 2017; 9:15286-15296. [PMID: 28452468 DOI: 10.1021/acsami.7b02529] [Citation(s) in RCA: 150] [Impact Index Per Article: 21.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Layer-by-layer (LbL) self-assembled stacked Testudo-like MoS2 superstructures carrying cancer drugs are formed from nanosheets controllably assembled with sequence-based DNA oligonucleotides. These superstructures can disassemble autonomously in response to cancer cells' heightened ATP metabolism. First, we functionalize MoS2 nanosheets (MoS2-NS) nanostructures with DNA oligonucleotides having thiol-terminated groups (DNA/MoS2-NS) via strong binding to sulfur atom defect vacancies on MoS2 surfaces. The driving force to assemble into a higher-order DNA/MoS2-NS superstructure is guided by a linker aptamer that induced interlayer assembly. In the presence of target ATP molecules, these multilayer superstructures disassembled as a consequence of stronger binding of ATP molecules with the linking aptamers. This design plays a dual role of protection and delivery by LbL stacked MoS2-NS similar in concept to a Greek Testudo. These superstructures present a protective armor-like shell of MoS2-NS, which still remains responsive to small and infiltrating ATP molecules diffusing through the protective MoS2-NS, contributing to an enhanced stimuli-responsive drug release system for targeted chemotherapy.
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Affiliation(s)
- Bang Lin Li
- Department of Chemical and Biomolecular Engineering, National University of Singapore , Singapore 117585, Singapore
| | - Magdiel I Setyawati
- Department of Chemical and Biomolecular Engineering, National University of Singapore , Singapore 117585, Singapore
| | - Linye Chen
- Department of Chemical and Biomolecular Engineering, National University of Singapore , Singapore 117585, Singapore
| | - Jianping Xie
- Department of Chemical and Biomolecular Engineering, National University of Singapore , Singapore 117585, Singapore
| | - Katsuhiko Ariga
- World Premier International (WPI) Research for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Chwee-Teck Lim
- Department of Biomedical Engineering, National University of Singapore , Singapore 117575, Singapore
- Centre for Advanced 2D Materials, Graphene Research Centre, National University of Singapore , Singapore 117546, Singapore
- Mechanobiology Institute, National University of Singapore , Singapore 117411, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore , Singapore 117456, Singapore
| | - Slaven Garaj
- Department of Biomedical Engineering, National University of Singapore , Singapore 117575, Singapore
- Centre for Advanced 2D Materials, Graphene Research Centre, National University of Singapore , Singapore 117546, Singapore
- Department of Physics, National University of Singapore , Singapore 117542, Singapore
| | - David Tai Leong
- Department of Chemical and Biomolecular Engineering, National University of Singapore , Singapore 117585, Singapore
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33
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Li Y, Xu H, Liu W, Yang G, Shi J, Liu Z, Liu X, Wang Z, Tang Q, Liu Y. Enhancement of Exciton Emission from Multilayer MoS 2 at High Temperatures: Intervalley Transfer versus Interlayer Decoupling. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 28247465 DOI: 10.1002/smll.201700157] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2017] [Indexed: 05/16/2023]
Abstract
It is very important to obtain a deeper understand of the carrier dynamics for indirect-bandgap multilayer MoS2 and to make further improvements to the luminescence efficiency. Herein, an anomalous luminescence behavior of multilayer MoS2 is reported, and its exciton emission is significantly enhanced at high temperatures. Temperature-dependent Raman studies and electronic structure calculations reveal that this experimental observation cannot be fully explained by a common mechanism of thermal-expansion-induced interlayer decoupling. Instead, a new model involving the intervalley transfer of thermally activated carriers from Λ/Γ point to K point is proposed to understand the high-temperature luminescence enhancement of multilayer MoS2 . Steady-state and transient-state fluorescence measurements show that both the lifetime and intensity of the exciton emission increase relatively to increasing temperature. These two experimental evidences, as well as a calculation of carrier population, provide strong support for the proposed model.
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Affiliation(s)
- Yuanzheng Li
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Haiyang Xu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Weizhen Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jia Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- NOVTAS, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhongqiang Wang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Qingxin Tang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
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34
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Hong J, Jin C, Yuan J, Zhang Z. Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28295728 DOI: 10.1002/adma.201606434] [Citation(s) in RCA: 96] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2016] [Revised: 01/13/2017] [Indexed: 05/10/2023]
Abstract
Two-dimensional layered graphene-like crystals including transition-metal dichalcogenides (TMDs) have received extensive research interest due to their diverse electronic, valleytronic, and chemical properties, with the corresponding optoelectronics and catalysis application being actively explored. However, the recent surge in two-dimensional materials science is accompanied by equally great challenges, such as defect engineering in large-scale sample synthesis. It is necessary to elucidate the effect of structural defects on the electronic properties in order to develop an application-specific strategy for defect engineering. Here, two aspects of the existing knowledge of native defects in two-dimensional crystals are reviewed. One is the point defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron microscopy, and their local electronic properties, as measured by single-atom electron energy-loss spectroscopy. The other will focus on the point defects in TMDs and their influence on the electronic structure, photoluminescence, and electric transport properties. This review of atomic defects in two-dimensional materials will offer a clear picture of the defect physics involved to demonstrate the local modulation of the electronic properties and possible benefits in potential applications in magnetism and catalysis.
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Affiliation(s)
- Jinhua Hong
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Jun Yuan
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
- Department of Physics, University of York, Heslington, York, YO10 5DD, UK
| | - Ze Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
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