Additional energy scale in SmB6 at low-temperature

Kondo interaction in FeTe and its potential role in the magnetic order

Finding d-electron heavy fermion states has been an important topic as the diversity in d-electron materials can lead to many exotic Kondo effect-related phenomena or new states of matter such as correlation-driven topological Kondo insulator. Yet, obtaining direct spectroscopic evidence for a d-electron heavy fermion system has been elusive to date. Here, we report the observation of Kondo lattice behavior in an antiferromagnetic metal, FeTe, via angle-resolved photoemission spectroscopy, scanning tunneling spectroscopy and transport property measurements. The Kondo lattice behavior is represented by the emergence of a sharp quasiparticle and Fano-type tunneling spectra at low temperatures. The transport property measurements confirm the low-temperature Fermi liquid behavior and reveal successive coherent-incoherent crossover upon increasing temperature. We interpret the Kondo lattice behavior as a result of hybridization between localized Fe 3dxy and itinerant Te 5pz orbitals. Our observations strongly suggest unusual cooperation between Kondo lattice behavior and long-range magnetic order.

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB6

Incorporating relativistic physics into quantum tunneling can lead to exotic behavior such as perfect transmission through Klein tunneling. Here, we probed the tunneling properties of spin-momentum-locked relativistic fermions by designing and implementing a tunneling geometry that uses nanowires of the topological Kondo insulator candidate samarium hexaboride. The nanowires are attached to the end of scanning tunneling microscope tips and used to image the bicollinear stripe spin order in the antiferromagnet Fe_1.03Te with a Neel temperature of about 50 kelvin. The antiferromagnetic stripes become invisible above 10 kelvin concomitant with the suppression of the topological surface states in the tip. We further demonstrate that the direction of spin polarization is tied to the tunneling direction. Our technique establishes samarium hexaboride nanowires as ideal conduits for spin-polarized currents.

Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity

Iron silicide (FeSi) is a fascinating material that has attracted extensive research efforts for decades, notably revealing unusual temperature-dependent electronic and magnetic characteristics, as well as a close resemblance to the Kondo insulators whereby a coherent picture of intrinsic properties and underlying physics remains to be fully developed. For a better understanding of this narrow-gap semiconductor, we prepared and examined FeSi(110) single-crystal surfaces of high quality. Combined insights from low-temperature scanning tunneling microscopy and density functional theory calculations (DFT) indicate an unreconstructed surface termination presenting rows of Fe-Si pairs. Using high-resolution tunneling spectroscopy (STS), we identify a distinct asymmetric electronic gap in the sub-10 K regime on defect-free terraces. Moreover, the STS data reveal a residual density of states in the gap regime whereby two in-gap states are recognized. The principal origin of these features is rationalized with the help of the DFT-calculated band structure. The computational modeling of a (110)-oriented slab notably evidences the existence of interfacial intragap bands accounting for a markedly increased density of states around the Fermi level. These findings support and provide further insight into the emergence of surface metallicity in the low-temperature regime.

Towards a Single Chemical Model for Understanding Lanthanide Hexaborides

Lanthanide hexaborides (LnB₆ ) have disparate and often anomalous properties, from structurally homogeneous mixed valency, to superconductivity, spectral anomalies, and unexplained phase transitions. It is unclear how such a diversity of properties may arise in the solids of identical crystal structures and seemingly very similar electronic structures. Building on our previous model for SmB₆ (mixed valent, with a peak in specific heat, and pressure induced magnetic phase transitions), we present a unifying dynamic bonding model for LnB₆ that explains simultaneously EuB₆ (possessing an anomalous peak in specific heat at low T, magnetic phase transitions, and no mixed valency), YbB₆ (mixed valent topological insulator), and rather ordinary LaB₆ . We show that Ln can engage in covalent bonding with boron, and, in some members of the LnB₆ family, also easily access alternative bonding states through the electron-phonon coupling. The accessibility, relative energetics, and bonding nature of the states involved dictate the properties.

Dynamical Bonding Driving Mixed Valency in a Metal Boride

Samarium hexaboride is an anomaly, having many exotic and seemingly mutually incompatible properties. It was proposed to be a mixed-valent semiconductor, and later a topological Kondo insulator, and yet has a Fermi surface despite being an insulator. We propose a new and unified understanding of SmB₆ centered on the hitherto unrecognized dynamical bonding effect: the coexistence of two Sm-B bonding modes within SmB₆ , corresponding to different oxidation states of the Sm. The mixed valency arises in SmB₆ from thermal population of these distinct minima enabled by motion of B. Our model simultaneously explains the thermal valence fluctuations, appearance of magnetic Fermi surface, excess entropy at low temperatures, pressure-induced phase transitions, and related features in Raman spectra and their unexpected dependence on temperature and boron isotope.

Kondo-Induced Giant Isotropic Negative Thermal Expansion

Negative thermal expansion is an unusual phenomenon appearing in only a handful of materials, but pursuit and mastery of the phenomenon holds great promise for applications across disciplines and industries. Here we report use of x-ray spectroscopy and diffraction to investigate the 4f-electronic properties in Y-doped SmS and employ the Kondo volume collapse model to interpret the results. Our measurements reveal an unparalleled decrease of the bulk Sm valence by over 20% at low temperatures in the mixed-valent golden phase, which we show is caused by a strong coupling between an emergent Kondo lattice state and a large isotropic volume change. The amplitude and temperature range of the negative thermal expansion appear strongly dependent on the Y concentration and the associated chemical disorder, providing control over the observed effect. This finding opens avenues for the design of Kondo lattice materials with tunable, giant, and isotropic negative thermal expansion.

Contrast Reversal in Scanning Tunneling Microscopy and Its Implications for the Topological Classification of SmB6

SmB₆ has recently attracted considerable interest as a candidate for the first strongly correlated topological insulator. Such materials promise entirely new properties such as correlation-enhanced bulk bandgaps or a Fermi surface from spin excitations. Whether SmB₆ and its surface states are topological or trivial is still heavily disputed however, and a solution is hindered by major disagreement between angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM) results. Here, a combined ARPES and STM experiment is conducted. It is discovered that the STM contrast strongly depends on the bias voltage and reverses its sign beyond 1 V. It is shown that the understanding of this contrast reversal is the clue to resolving the discrepancy between ARPES and STM results. In particular, the scanning tunneling spectra reflect a low-energy electronic structure at the surface, which supports a trivial origin of the surface states and the surface metallicity of SmB₆ .

Inorganic Boron-Based Nanostructures: Synthesis, Optoelectronic Properties, and Prospective Applications

Inorganic boron-based nanostructures have great potential for field emission (FE), flexible displays, superconductors, and energy storage because of their high melting point, low density, extreme hardness, and good chemical stability. Until now, most researchers have been focused on one-dimensional (1D) boron-based nanostructures (rare-earth boride (REB₆) nanowires, boron nanowires, and nanotubes). Currently, two-dimensional (2D) borophene attracts most of the attention, due to its unique physical and chemical properties, which make it quite different from its corresponding bulk counterpart. Here, we offer a comprehensive review on the synthesis methods and optoelectronics properties of inorganic boron-based nanostructures, which are mainly concentrated on 1D rare-earth boride nanowires, boron monoelement nanowires, and nanotubes, as well as 2D borophene and borophane. This review paper is organized as follows. In Section I, the synthesis methods of inorganic boron-based nanostructures are systematically introduced. In Section II, we classify their optical and electrical transport properties (field emission, optical absorption, and photoconductive properties). In the last section, we evaluate the optoelectronic behaviors of the known inorganic boron-based nanostructures and propose their future applications.

Synthesis of monodisperse isomeric oligomers based on meta-/para- and linear/star-monomer precursors with Ugi–hydrosilylation orthogonal cycles

Monodisperse oligomers were precisely prepared through orthogonal cycles of Ugi-4CRs and hydrosilylation coupling reactions, and the “monodisperse isomeric oligomers” were explored.

Magnetic and defect probes of the SmB6 surface state

The impact of nonmagnetic and magnetic impurities on topological insulators is a central focus concerning their fundamental physics and possible spintronics and quantum computing applications. Combining scanning tunneling spectroscopy with transport measurements, we investigate, both locally and globally, the effect of nonmagnetic and magnetic substituents in SmB₆, a predicted topological Kondo insulator. Around the so-introduced substitutents and in accord with theoretical predictions, the surface states are locally suppressed with different length scales depending on the substituent's magnetic properties. For sufficiently high substituent concentrations, these states are globally destroyed. Similarly, using a magnetic tip in tunneling spectroscopy also resulted in largely suppressed surface states. Hence, a destruction of the surface states is always observed close to atoms with substantial magnetic moment. This points to the topological nature of the surface states in SmB₆ and illustrates how magnetic impurities destroy the surface states from microscopic to macroscopic length scales.

Single crystal growth and anisotropic physical properties of Sm4Co3Ga16

We have synthesized high quality single crystals of Sm₄Co₃Ga₁₆ with gallium flux and investigated its physical properties with electrical resistivity, magnetization and specific-heat measurements. Antiferromagnetic transition below 6.7 K has been detected. No superconducting transitions have been dectected down to 0.5 K from our single crystals. Based on our experimental result, Sm³⁺ state in Sm₄Co₃Ga₁₆ is likely well localized, in which stable magnetic moment in its doubly degenerated ground state contributes to the magnetic order with little interference of Kondo type of interaction.

4f Crystal Field Ground State of the Strongly Correlated Topological Insulator SmB_{6}

We investigated the crystal-electric field ground state of the 4f manifold in the strongly correlated topological insulator SmB_{6} using core-level nonresonant inelastic x-ray scattering. The directional dependence of the scattering function that arises from higher multipole transitions establishes unambiguously that the Γ_{8} quartet state of the Sm f^{5}  J=5/2 configuration governs the ground-state symmetry and, hence, the topological properties of SmB_{6}. Our findings contradict the results of density functional calculations reported so far.

Evidence for in-gap surface states on the single phase SmB6(001) surface

Structural and electronic properties of the SmB₆(001) single-crystal surface prepared by Ar⁺ ion sputtering and controlled annealing are investigated by scanning tunneling microscopy. In contrast to the cases of cleaved surfaces, we observe a single phase surface with a non-reconstructed p(1 × 1) lattice on the entire surface at an optimized annealing temperature. The surface is identified as Sm-terminated on the basis of spectroscopic measurements. On a structurally uniform surface, the emergence of the in-gap state, a robust surface state against structural variation, is further confirmed inside a Kondo hybridization gap at 4.4 K by temperature and atomically-resolved spatial dependences of the differential conductance spectrum near the Fermi energy.